JP5549754B2 - Deposition equipment - Google Patents

Description

  The present invention relates to a technique for forming a thin film by laminating a plurality of reaction product layers by supplying at least two kinds of reaction gases that react with each other to the surface of a substrate in order and performing this supply cycle many times.

  As a film forming method in a semiconductor manufacturing process, a first reactive gas is adsorbed on a surface of a semiconductor wafer (hereinafter referred to as “wafer”) as a substrate in a vacuum atmosphere, and then a gas to be supplied is used as a second reactive gas. The process of switching and forming one or more atomic layers or molecular layers by the reaction of both gases, and laminating these layers to form a film on the substrate by performing this cycle many times. Are known. This process is called, for example, ALD (Atomic Layer Deposition) or MLD (Molecular Layer Deposition) (hereinafter referred to as ALD method), and can control the film thickness with high accuracy according to the number of cycles. In-plane uniformity of film quality is also good, and it is an effective technique that can cope with the thinning of semiconductor devices.

  As an apparatus for carrying out such a film forming method, using a single-wafer film forming apparatus equipped with a gas shower head in the upper center of the vacuum vessel, a reactive gas is supplied from the upper side of the central part of the substrate, and unreacted. A method of exhausting the reaction gas and reaction by-products from the bottom of the processing vessel has been studied. By the way, the film forming method described above has a problem that the gas replacement with the purge gas takes a long time and the number of cycles is, for example, several hundred times, so that there is a problem that the processing time is long. It is requested.

  From this background, Patent Documents 1 to 8 have already known apparatuses that perform film formation processing by arranging a plurality of substrates on a rotary table in a vacuum vessel in a rotating direction. The described film forming apparatus has a problem of adhesion of particles and reaction products to the wafer, a problem that a long time is required for purging, and a reaction is caused in an unnecessary region. Therefore, the applicant of the present application is examining a rotary table type film forming apparatus that can solve these problems.

By the way, as an example in which the ALD film forming method is suitable, for example, a high dielectric film used for a gate oxide film, for example, a silicon nitride film (SiN film), a silicon oxide film (SiO ₂ film), or the like is formed. Is mentioned. For example, when a silicon nitride film is formed, for example, dichlorosilane (hereinafter referred to as “DCS”) gas or the like is used as the first reaction gas, and ammonia gas or the like is used as the second reaction gas. It is done. In the film formation using such a reactive gas, the energy required for the film formation is conventionally supplied by raising the temperature of the wafer to a temperature of, for example, 700 ° C. to 800 ° C. With this trend, it is necessary to reduce the thermal history applied to the wafer during film formation.

Therefore, for example, in Patent Document 9, dozens to hundreds of wafers, for example, are held in a shelf on a holder and carried into a cylindrical reaction tube, and a reaction gas is supplied into the reaction tube to supply the wafer. In the vertical film forming apparatus for forming the film, for example, a technique is described in which ammonia gas which is a reaction gas on one side is converted into plasma and then supplied into the reaction vessel to form the film. By performing film formation using active species (for example, NH ₃ radicals) of a reactive gas generated with plasma, the thermal energy applied to the wafer can be reduced as compared with the conventional method.

The plasma generator provided in the film forming apparatus described in Patent Document 9 has a configuration in which parallel plate electrodes to which high-frequency power is applied are provided along the height direction of the wall portion of the reaction tube. The activated reaction gas that has been converted into plasma through the parallel plates is supplied from the wall of the reaction tube to the wafer held in a shelf shape in the reaction tube. However, since the reaction gas activated by plasma formation (reaction gas containing an active species such as NH ₃ radical) has a very high deactivation rate, the reaction gas reaches immediately after being supplied from the wall of the reaction tube. The concentration of active species in the reaction gas differs greatly between the peripheral portion and the central portion of the wafer where the reaction gas arrives later than the peripheral portion, and the in-plane uniformity of the film quality decreases between these portions. There was a problem such as.

Further, in the rotary table type film forming apparatus studied by the present applicant, a reaction gas nozzle is provided so as to extend in the radial direction from the wall portion of the processing container toward the center portion of the rotation table, The liquid flows through the nozzle and is discharged toward a wafer passing under the nozzle through a plurality of gas supply holes provided on the side wall surface of the nozzle. At this time, as in the technique described in Patent Document 9, when a plasma generation unit is provided on the wall of the processing vessel, that is, the base end side of the nozzle, and the reaction gas is converted into plasma and then supplied into the nozzle, Since the reactive species of the reactive gas are deactivated only by contacting with the solid surface, for example, the reactive gas activity is rapidly lost when flowing through the narrow nozzle while contacting the wall of the nozzle. For these reasons, when the technique described in Patent Document 9 is applied to a rotary table type film forming apparatus under development by the applicant, the in-plane uniformity of the film quality is reduced as compared with a conventional vertical heat treatment apparatus. There was a problem.
As a technique for irradiating the wafer with plasma, as shown in FIG. 57, a film is formed by reacting the reaction gas A and the reaction gas B with the wafer W mounted on the mounting table 501 in the processing container 500. Then, a technique is known in which oxygen radicals generated in the plasma generation chamber 502 are supplied to the thin film to modify the thin film. Reference numeral 503 denotes a radical conveyance path, 504 a gas supply unit, 505 a reaction gas A supply source, 506 a reaction gas B supply source, 507 a gas supply path, 508 a heater, and 509 a vacuum pump. An example of the thin film is a SiO2 film. In this case, oxygen radicals serve to remove impurities such as N, OH groups, and H in the SiO2 film. However, since the plasma supplied to the wafer W is so-called remote plasma, radicals are deactivated in the middle of transportation, and the concentration of radicals supplied to the wafer W is low, so that sufficient modification cannot be performed. Therefore, since the impurities are not discharged from the SiO2 film, the ratio of Si and O does not approach 1: 2, and a three-dimensional structure of Si-O-Si is hardly formed. As a result, a high-quality SiO2 film is obtained. Cannot be obtained. In order to promote the decomposition of ozone in the plasma, it is conceivable to increase the temperature of the wafer, but in this case, it becomes impossible to cope with a low temperature process.

US Pat. No. 7,153,542: FIGS. 6 (a) and 6 (b) JP 2001-254181 A: FIGS. 1 and 2 Japanese Patent No. 3144664: FIG. 1, FIG. 2, Claim 1 Japanese Patent Laid-Open No. 4-287912: US Pat. No. 6,634,314 JP 2007-247066 A: Paragraphs 0023-0025, 0058, FIG. 12 and FIG. US Patent Publication No. 2007-218701 US Patent Publication No. 2007-218702 JP 2004-343017 A: Paragraphs 0021 to 0025, FIGS. 1 to 4

The present invention has been made in view of such circumstances, and an object thereof is to provide a film forming apparatus capable of supplying a uniformly activated processing gas.

A film forming apparatus according to the present invention includes:
In a film forming apparatus for forming a thin film by laminating a plurality of reaction product layers by sequentially supplying at least two kinds of processing gases that react with each other in a vacuum vessel to the surface of a substrate and executing this supply cycle ,
A rotary table provided in the vacuum vessel;
A substrate placement area provided for placing the substrate on the turntable;
A first reaction gas supply unit that is provided apart from each other in the rotation direction of the turntable and supplies a first process gas and a second process gas to the surface of the substrate on the substrate mounting area side, respectively. And a second reactive gas supply unit;
In order to separate the atmosphere of the first processing region to which the first processing gas is supplied and the second processing region to which the second processing gas is supplied, it is located between these processing regions in the rotation direction. A separation region;
In order to separate the atmospheres of the first processing region and the second processing region, a discharge hole for discharging a separation gas is formed on the substrate mounting surface side of the rotary table, which is located in the center of the vacuum vessel. A central area;
An exhaust port provided in the vacuum container for exhausting the inside of the vacuum container,
The separation region includes a separation gas supply unit for supplying a separation gas, and a narrow space for the separation gas supplied from the separation gas supply unit to flow from the separation region to the processing region along the rotation direction. A ceiling surface for forming between the rotary table and
The ceiling surface is configured so that a width along the rotation direction is widened toward an outer edge of the vacuum vessel,
The height dimension from the turntable to the ceiling surface is set smaller than each height dimension of the first processing area and the second processing area,
At least one of the first reactive gas supply unit and the second reactive gas supply unit is
A flow path forming member partitioned into a gas activation flow path and a gas introduction flow path by a partition;
A gas introduction port for introducing a processing gas into the gas introduction flow path;
A pair of electrodes provided so as to extend in parallel with each other along the partition wall in the gas activation channel, and to which power for activating the processing gas is applied;
A communication hole provided in the partition wall along the length direction of the electrode, for supplying a processing gas in the gas introduction channel to the gas activation channel;
An activated gas comprising: a gas discharge port provided along the length direction of the electrode in the gas activation channel for discharging the gas activated in the gas activation channel Configured as an injector ,
The communication hole is formed above the height level of the electrode,
The height dimension of the region through which the processing gas flows between the electrode and the ceiling surface of the gas activation channel is h, and the processing gas is between the electrode and the partition facing the electrode. Assuming that the width dimension of the flowing region is w, the height dimension h and the width dimension w satisfy h ≧ w .

Moreover, the film forming apparatus of the present invention comprises:
In a film forming apparatus for forming a thin film by laminating a plurality of reaction product layers by sequentially supplying at least two kinds of processing gases that react with each other in a vacuum vessel to the surface of a substrate and executing this supply cycle ,
A rotary table provided in the vacuum vessel;
A substrate placement area provided for placing the substrate on the turntable;
A first reaction gas supply unit that is provided apart from each other in the rotation direction of the turntable and supplies a first process gas and a second process gas to the surface of the substrate on the substrate mounting area side, respectively. And a second reactive gas supply unit;
In order to separate the atmosphere of the first processing region to which the first processing gas is supplied and the second processing region to which the second processing gas is supplied, it is located between these processing regions in the rotation direction. A separation region;
In order to separate the atmospheres of the first processing region and the second processing region, a discharge hole for discharging a separation gas is formed on the substrate mounting surface side of the rotary table, which is located in the center of the vacuum vessel. A central area;
An exhaust port provided in the vacuum vessel to evacuate the vacuum vessel;
An activated gas injector for supplying an activated gas to the substrate placed in the substrate placement region to modify the thin film on the substrate, and
The separation region includes a separation gas supply unit for supplying a separation gas, and a narrow space for the separation gas supplied from the separation gas supply unit to flow from the separation region to the processing region along the rotation direction. A ceiling surface for forming between the rotary table and
The ceiling surface is configured so that a width along the rotation direction is widened toward an outer edge of the vacuum vessel,
The height dimension from the turntable to the ceiling surface is set smaller than each height dimension of the first processing area and the second processing area,
The activated gas injector is
A flow path forming member partitioned into a gas activation flow path and a gas introduction flow path by a partition;
A gas introduction port for introducing a reforming gas into the gas introduction flow path;
A pair of electrodes provided in the gas activation flow path so as to extend in parallel with each other along the partition wall, and to which power for activating the reforming gas is applied;
A communication hole provided in the partition wall along the length direction of the electrode, for supplying the gas for reforming in the gas introduction channel to the gas activation channel;
A gas outlet provided along the length direction of the electrode in the gas activation channel for discharging the gas activated in the gas activation channel ;
The gas discharge port of the activated gas injector is provided at a height position of 1 mm or more and 10 mm or less from the surface of the substrate placed in the substrate placement region .
Here, each of the pair of electrodes is preferably covered with ceramics, and further provided along the partition wall in the gas introduction flow path. The gas introduction port may be provided with a gas introduction nozzle formed on the proximal end side.

Furthermore, the film forming apparatus of the present invention includes:
In a film forming apparatus for forming a thin film by laminating a plurality of reaction product layers by sequentially supplying at least two kinds of processing gases that react with each other in a vacuum vessel to the surface of a substrate and executing this supply cycle ,
A rotary table provided in the vacuum vessel;
A substrate placement area provided for placing the substrate on the turntable;
A first reaction gas supply unit that is provided apart from each other in the rotation direction of the turntable and supplies a first process gas and a second process gas to the surface of the substrate on the substrate mounting area side, respectively. And a second reactive gas supply unit;
In order to separate the atmosphere of the first processing region to which the first processing gas is supplied and the second processing region to which the second processing gas is supplied, it is located between these processing regions in the rotation direction. A separation region;
In order to separate the atmospheres of the first processing region and the second processing region, a discharge hole for discharging a separation gas is formed on the substrate mounting surface side of the rotary table, which is located in the center of the vacuum vessel. A central area;
An exhaust port provided in the vacuum container for exhausting the inside of the vacuum container,
The separation region includes a separation gas supply unit for supplying a separation gas, and a narrow space for the separation gas supplied from the separation gas supply unit to flow from the separation region to the processing region along the rotation direction. A ceiling surface for forming between the rotary table and
The ceiling surface is configured so that a width along the rotation direction is widened toward an outer edge of the vacuum vessel,
The height dimension from the turntable to the ceiling surface is set smaller than each height dimension of the first processing area and the second processing area,
At least one of the first reactive gas supply unit and the second reactive gas supply unit is
A flow path forming member partitioned into a gas activation flow path and a gas introduction flow path by a partition;
A gas introduction port for introducing a processing gas into the gas introduction flow path;
A heater provided to extend along the partition wall in the gas activation channel, and for heating and activating the processing gas in the gas activation channel;
A communication hole provided in the partition wall along the length direction of the heater, for supplying a processing gas in the gas introduction channel to the gas activation channel;
An activation device comprising: a gas discharge port provided along the length direction of the heater in the gas activation channel for discharging the gas activated in the gas activation channel; Configured as a gas injector ,
The gas discharge port of the activated gas injector is provided at a height position of 1 mm or more and 10 mm or less from the surface of the substrate placed in the substrate placement region .

Furthermore, the film forming apparatus of the present invention includes:
In a film forming apparatus for forming a thin film by laminating a plurality of reaction product layers by sequentially supplying at least two kinds of processing gases that react with each other in a vacuum vessel to the surface of a substrate and executing this supply cycle ,
A rotary table provided in the vacuum vessel;
A substrate placement area provided for placing the substrate on the turntable;
A first reaction gas supply unit that is provided apart from each other in the rotation direction of the turntable and supplies a first process gas and a second process gas to the surface of the substrate on the substrate mounting area side, respectively. And a second reactive gas supply unit;
In order to separate the atmosphere of the first processing region to which the first processing gas is supplied and the second processing region to which the second processing gas is supplied, it is located between these processing regions in the rotation direction. A separation region;
In order to separate the atmospheres of the first processing region and the second processing region, a discharge hole for discharging a separation gas is formed on the substrate mounting surface side of the rotary table, which is located in the center of the vacuum vessel. A central area;
An exhaust port provided in the vacuum vessel to evacuate the vacuum vessel;
An activated gas injector for supplying an activated gas to the substrate placed in the substrate placement region to modify the thin film on the substrate, and
The separation region includes a separation gas supply unit for supplying a separation gas, and a narrow space for the separation gas supplied from the separation gas supply unit to flow from the separation region to the processing region along the rotation direction. A ceiling surface for forming between the rotary table and
The ceiling surface is configured so that a width along the rotation direction is widened toward an outer edge of the vacuum vessel,
The height dimension from the turntable to the ceiling surface is set smaller than each height dimension of the first processing area and the second processing area,
The activated gas injector is
A flow path forming member partitioned into a gas activation flow path and a gas introduction flow path by a partition;
A gas introduction port for introducing a reforming gas into the gas introduction flow path;
A heater provided to extend along the partition wall in the gas activation channel, and for heating and activating the reforming gas in the gas activation channel;
A communication hole provided in the partition wall along the length direction of the heater, for supplying the gas for reforming in the gas introduction channel to the gas activation channel;
A gas outlet provided in the gas activation channel along the length direction of the heater for discharging the gas activated in the gas activation channel ;
The gas discharge port of the activated gas injector is provided at a height position of 1 mm or more and 10 mm or less from the surface of the substrate placed in the substrate placement region .

  It is preferable that the activated gas injector is provided so as to face the substrate placement region side of the turntable and to cross the moving path of the turntable. The gas discharge port of the activated gas injector is preferably provided at a height of 1 mm or more and 10 mm or less from the surface of the substrate placed in the substrate placement region. The outer surface portion of the activated gas injector is configured as a cover body that covers the gas activation flow path and the gas introduction flow path, and the lower end portion of the cover body is intruded by gas from the outside into the cover body. In order to suppress this, it is preferable to be configured as an airflow restriction member that extends parallel to the rotary table and outward through a gap. It is preferable that the activated gas injector is attached to the side wall of the vacuum vessel in an airtight manner so that the distance between the activated gas injector and the surface of the substrate on the rotary table can be adjusted. The activated gas injector is attached to the side wall of the vacuum vessel so as to be tiltable and airtight so that the activated gas injector can be tilted with respect to the surface of the substrate on the rotary table in a direction intersecting the moving path of the rotary table. preferable.

According to the present invention, a pair of electrodes or a heater for activating the processing gas is provided in the activated gas injector for supplying the processing gas . For this reason, for example, an electrode is provided on the side wall portion of an apparatus for supplying activated processing gas, and the activated processing gas is activated uniformly compared to the case of supplying the activated processing gas into the apparatus through an elongated nozzle. For example, when the activated gas injector is applied to a film forming apparatus that forms a film on the substrate surface, a film having a uniform film quality must be formed on the substrate surface. Can do.

FIG. 4 is a vertical cross-sectional view taken along line I-I ′ of FIG. 3 showing a vertical cross section of the film forming apparatus according to the embodiment of the present invention. It is a perspective view which shows schematic structure inside the said film-forming apparatus. It is a cross-sectional top view of said film-forming apparatus. It is a longitudinal cross-sectional view which shows the process area | region and isolation | separation area | region in said film-forming apparatus. It is a longitudinal cross-sectional view of the isolation | separation area | region in said film-forming apparatus. It is explanatory drawing which shows a mode that separation gas or purge gas flows. It is a perspective view which shows the activation gas injector provided with the function which plasma-izes a reaction gas. It is a perspective view which shows the internal structure of the said activated gas injector. It is a longitudinal cross-sectional view of the activated gas injector. It is a cross-sectional view which shows the internal structure of the base end part of the said activated gas injector. It is explanatory drawing which shows the effect | action of the said activated gas injector. It is explanatory drawing which shows a mode that the 1st reaction gas and the 2nd reaction gas are isolate | separated by separation gas, and are exhausted. It is a perspective view which shows the internal structure of the activated gas injector concerning 2nd Embodiment. It is a longitudinal cross-sectional view of the activated gas injector concerning the said 2nd Embodiment. It is explanatory drawing which shows the effect | action of the activated gas injector concerning the said 2nd Embodiment. It is a perspective view which shows the modification of the said activated gas injector. It is a vertical side view of the activated gas injector which concerns on the said modification. It is a perspective view which shows the internal structure of the activated gas injector which concerns on 3rd Embodiment. It is a longitudinal cross-sectional view of the activated gas injector concerning the said 3rd Embodiment. It is a partially broken side view which shows the structure of the heater provided in the activated gas injector concerning the said 3rd Embodiment. It is a perspective view which shows the internal structure of the activation gas injector which concerns on 4th Embodiment. It is a longitudinal cross-sectional view of the activated gas injector concerning the said 4th Embodiment. It is explanatory drawing for demonstrating the dimension example of the convex part used for a isolation | separation area | region. It is a cross-sectional top view which shows the film-forming apparatus which concerns on other embodiment of this invention. It is a cross-sectional top view which shows the film-forming apparatus which concerns on embodiment other than the above of this invention. It is a longitudinal cross-sectional view which shows the film-forming apparatus which concerns on embodiment other than the above of this invention. It is a schematic plan view which shows an example of the substrate processing system using the film-forming apparatus of this invention. It is a perspective view which shows the film-forming apparatus in other embodiment of this invention. It is a top view which shows the film-forming apparatus of the other example of said. It is a longitudinal cross-sectional view which shows the film-forming apparatus of the said other example. It is a perspective view which shows the activated gas injector in the film-forming apparatus of said other example. It is a longitudinal cross-sectional view which shows said activated gas injector. It is the schematic which shows the attachment method of said activated gas injector. It is a longitudinal cross-sectional view which shows said activated gas injector. It is a schematic diagram which shows a mode that a thin film is modify | reformed in the film-forming apparatus of said other example. It is a schematic diagram which shows a mode that a thin film is formed into a film in ALD method. It is a schematic diagram which shows the structure of BTBAS gas and diisopropylaminosilane gas. It is explanatory drawing concerning an Example. It is a characteristic view which shows the simulation result performed about the activated gas injector in said other example. It is a characteristic view which shows the simulation result performed about the activated gas injector in said other example. It is explanatory drawing explaining the experimental conditions in said other example. It is a characteristic view which shows the result obtained by experiment in said other example. It is a characteristic view obtained in the Example of this invention. It is a characteristic view obtained in the Example of this invention. It is a characteristic view obtained in the Example of this invention. It is a characteristic view obtained in the Example of this invention. It is a characteristic view obtained in the Example of this invention. It is a characteristic view obtained in the Example of this invention. It is a characteristic view obtained in the Example of this invention. It is a characteristic view obtained in the Example of this invention. It is a characteristic view obtained in the Example of this invention. It is a characteristic view obtained in the Example of this invention. It is a characteristic view obtained in the Example of this invention. It is a characteristic view obtained in the Example of this invention. It is a characteristic view obtained in the Example of this invention. It is a characteristic view obtained in the Example of this invention. It is the schematic which shows the conventional film-forming apparatus.

  A film forming apparatus according to an embodiment of the present invention includes a flat vacuum vessel 1 having a substantially circular planar shape as shown in FIG. 1 (a cross-sectional view taken along line II ′ in FIG. 3), and this vacuum. A rotary table 2 provided in the container 1 and having a center of rotation at the center of the vacuum container 1. The vacuum vessel 1 is configured such that the top plate 11 can be separated from the vessel body 12. The top plate 11 is pressed against the container main body 12 through a sealing member, for example, an O-ring 13 due to an internal decompression state, and maintains an airtight state. However, the top plate 11 is illustrated when the top plate 11 is separated from the container main body 12. It is lifted upward by a drive mechanism that does not.

  The rotary table 2 is fixed to a cylindrical core portion 21 at the center, and the core portion 21 is fixed to the upper end of a rotary shaft 22 extending in the vertical direction. The rotating shaft 22 penetrates the bottom surface portion 14 of the vacuum vessel 1 and its lower end is attached to a driving portion 23 that rotates the rotating shaft 22 around the vertical axis in this example in the clockwise direction. The rotating shaft 22 and the drive unit 23 are accommodated in a cylindrical case body 20 whose upper surface is open. The case body 20 has a flange portion provided on the upper surface thereof attached to the lower surface of the bottom surface portion 14 of the vacuum vessel 1 in an airtight manner, and the airtight state between the internal atmosphere and the external atmosphere of the case body 20 is maintained.

  As shown in FIGS. 2 and 3, a circular recess 24 is provided on the surface of the turntable 2 to place a plurality of, for example, five wafers, along the rotation direction (circumferential direction). It has been. In FIG. 3, the wafer W is drawn only in one recess 24 for convenience. Here, FIG. 4 is a developed view showing the rotary table 2 cut along a concentric circle and developed laterally. The recess 24 has a diameter larger than the diameter of the wafer W as shown in FIG. For example, it is slightly larger by 4 mm, for example, and the depth is set to be equal to the thickness of the wafer W. Therefore, when the wafer W is dropped into the recess 24, the surface of the wafer W and the surface of the turntable 2 (region where the wafer W is not placed) are aligned. If the difference in height between the surface of the wafer W and the surface of the turntable 2 is large, pressure fluctuation occurs at the stepped portion, and therefore the height of the surface of the wafer W and the surface of the turntable 2 can be made uniform. From the viewpoint of uniform in-plane film thickness uniformity. Aligning the height of the surface of the wafer W and the surface of the turntable 2 means that the height is the same or the difference between both surfaces is within 5 mm, but the height of both surfaces is as high as possible depending on the processing accuracy. It is preferable that the difference between the values be close to zero. A through hole (not shown) through which, for example, three elevating pins to be described later pass for supporting the back surface of the wafer W and elevating the wafer W is formed in the bottom surface of the recess 24.

  The concave portion 24 is for positioning the wafer W so that it does not pop out due to the centrifugal force accompanying the rotation of the turntable 2, and corresponds to the substrate placement area of the present invention. The (wafer mounting area) is not limited to the concave portion, and may be configured such that, for example, a plurality of guide members for guiding the periphery of the wafer W are arranged on the surface of the rotary table 2 along the circumferential direction of the wafer W. When the wafer W is sucked by providing a chuck mechanism such as an electrostatic chuck on the second side, a region where the wafer W is placed by the suction becomes a substrate placement region.

  As shown in FIGS. 2 and 3, the vacuum vessel 1 includes a first reactive gas nozzle 31 and an activated gas injector 32 and two separated gas nozzles 41 at positions opposed to the passage regions of the recess 24 in the rotary table 2, respectively. 42 extend radially from the central portion at a distance from each other in the circumferential direction of the vacuum vessel 1 (the rotational direction of the rotary table 2). As a result, the activated gas injector 32 is arranged in a state of extending in the rotation direction of the turntable 2, that is, in the direction intersecting the moving path. The first reaction gas nozzle 31, the activated gas injector 32, and the separation gas nozzles 41 and 42 are attached to, for example, the side wall of the vacuum vessel 1, and the gas supply ports 31a, 32a, 41a, and 42a that are the base ends thereof. Penetrates the side wall.

  In the illustrated example, the reaction gas nozzle 31, the activation injector 32, and the separation gas nozzles 41 and 42 are introduced into the vacuum vessel 1 from the peripheral wall portion of the vacuum vessel 1, but may be introduced from an annular protrusion 5 described later. Good. In this case, an L-shaped conduit that opens to the outer peripheral surface of the protrusion 5 and the outer surface of the top plate 11 is provided, and the reaction gas nozzle 31 (activate in one opening of the L-shaped conduit in the vacuum vessel 1. It is possible to adopt a configuration in which the injector 32 and the separation gas nozzles 41 and 42) are connected and the gas introduction port 31a (32a, 41a, 42a) is connected to the other opening of the L-shaped conduit outside the vacuum vessel 1. .

The first reaction gas nozzle 31 and the activated gas injector 32 are respectively a gas supply source of DCS (dichlorosilane) gas as a first reaction gas and a gas supply source of NH ₃ (ammonia) gas as a second reaction gas. The separation gas nozzles 41 and 42 are both connected to a gas supply source (not shown) of N ₂ gas (nitrogen gas), which is a separation gas. In this example, the activated gas injector 32, the separation gas nozzle 41, the first reaction gas nozzle 31, and the separation gas nozzle 42 are arranged in this order in the clockwise direction.

In the first reactive gas nozzle 31, gas discharge holes 33 for discharging a reactive gas to the lower side are arranged at intervals in the length direction of the nozzle. On the other hand, the activated gas injector 32 has a function as an activated gas injector that activates the NH ₃ gas introduced into the injector 32 and supplies the NH ₃ gas into the vacuum vessel 1. It will be described later. Further, the separation gas nozzles 41 and 42 are provided with discharge holes 40 for discharging the separation gas on the lower side at intervals in the length direction. The first reaction gas nozzle 31 and the activated gas injector 32 correspond to the first reaction gas supply means and the second reaction gas supply means, respectively, and the lower regions thereof are the first for adsorbing the DCS gas on the wafer W, respectively. And a second processing region P2 for adsorbing the activated NH ₃ gas to the wafer W.

  The separation gas nozzles 41 and 42 are for forming a separation region D for separating the first processing region P1 and the second processing region P2, and the top plate of the vacuum vessel 1 in the separation region D 2 to 4, the planar shape formed by dividing the circle drawn around the rotation center of the turntable 2 and along the vicinity of the inner peripheral wall of the vacuum vessel 1 in the circumferential direction is a fan. A convex portion 4 is provided which protrudes downward from the mold. The separation gas nozzles 41 and 42 are accommodated in a groove 43 formed so as to extend in the radial direction of the circle at the center of the convex portion 4 in the circumferential direction of the circle. That is, the distances from the central axis of the separation gas nozzles 41 and 42 to both fan-shaped edges (the upstream edge and the downstream edge in the rotation direction) of the convex portion 4 are set to the same length.

  In addition, although the groove part 43 is formed so that the convex part 4 may be divided into two equally in this embodiment, in other embodiment, for example, the rotation of the turntable 2 in the convex part 4 when viewed from the groove part 43. The groove 43 may be formed such that the upstream side in the direction is wider than the downstream side in the rotational direction.

  Therefore, for example, a flat low ceiling surface 44 (first ceiling surface) which is the lower surface of the convex portion 4 exists on both sides of the separation gas nozzles 41 and 42 in the circumferential direction. The ceiling surface 45 (second ceiling surface) higher than the ceiling surface 44 exists. The role of the convex portion 4 is a narrow space for preventing the first reactive gas and the second reactive gas from entering the rotary table 2 and preventing the mixing of the reactive gases. It is to form a space.

In other words, taking the separation gas nozzle 41 as an example, the NH ₃ gas is prevented from entering from the upstream side in the rotation direction of the turntable 2 and the DCS gas is prevented from entering from the downstream side in the rotation direction. “Preventing gas intrusion” means that the N ₂ gas, which is the separation gas discharged from the separation gas nozzle 41, diffuses between the first ceiling surface 44 and the surface of the turntable 2. It blows out to the space below the 2nd ceiling surface 45 adjacent to the 1 ceiling surface 44, and this means that the gas from the said adjacent space cannot penetrate | invade. The term "gas can not be penetration" means not only if it can not completely penetrate the lower side space of the convex portion 4 from the adjacent space, although somewhat invading, NH ₃ were respectively entering from both sides This also means that a state in which the gas and the DCS gas do not intermingle in the convex portion 4 is ensured, and as long as such an action is obtained, the atmosphere of the first processing region P1 which is the role of the separation region D and the first The separation effect from the atmosphere of the second processing region P2 can be exhibited. Therefore, the degree of narrowing in the narrow space is determined by the difference in pressure between the narrow space (the space below the convex portion 4) and the area adjacent to the space (the space below the second ceiling surface 45 in this example) It can be said that the specific dimension differs depending on the area of the convex portion 4 and the like. Further, the gas adsorbed on the wafer W can naturally pass through the separation region D, and the prevention of gas intrusion means gas in the gas phase.

  On the other hand, on the lower surface of the top plate 11, as shown in FIG. 5 and FIG. Is provided. As shown in FIG. 5, the protruding portion 5 is formed continuously with the portion on the rotation center side of the convex portion 4, and the lower surface thereof is the same height as the lower surface (ceiling surface 44) of the convex portion 4. Is formed. 2 and 3 show the top plate 11 cut horizontally at a position lower than the ceiling surface 45 and higher than the separation gas nozzles 41 and 42. In addition, the protrusion part 5 and the convex-shaped part 4 are not necessarily restricted to integral, The separate body may be sufficient.

  As for how to make a combination structure of the convex portion 4 and the separation gas nozzle 41 (42), a groove portion 43 is formed in the center of one fan-shaped plate forming the convex portion 4, and the separation gas nozzle 41 (42) is formed in the groove portion 43. ) Is not limited to the structure in which two fan-shaped plates are used, and a configuration in which the fan is fixed to the lower surface of the top plate main body by bolting or the like at both sides of the separation gas nozzle 41 (42).

  In this example, in the separation gas nozzle 41 (42), discharge holes that are directed downward, for example, having a diameter of 0.5 mm, are arranged at intervals of, for example, 10 mm along the length direction of the nozzle. For the first reactive gas nozzle 31 as well, discharge holes having a diameter of, for example, 0.5 mm facing downward are arranged at intervals of, for example, 10 mm along the length direction of the nozzle.

  In this example, a wafer W having a diameter of 300 mm is used as a substrate to be processed. In this case, the convex portion 4 has a circumferential length (rotary table) at a boundary portion with a later-described protruding portion 5 that is, for example, 140 mm away from the rotation center. 2 is, for example, 146 mm, and the outermost portion of the wafer W mounting region (recess 24) has a circumferential length of, for example, 502 mm. As shown in FIG. 4A, the length L is 246 mm when viewed from the circumferential length L of the convex portion 4 located on the left and right sides of the separation gas nozzle 41 (42) in the outer portion. It is.

Further, as shown in FIG. 4B, the height h from the surface of the turntable 2 on the lower surface of the convex portion 4, that is, the ceiling surface 44 may be, for example, 0.5 mm to 10 mm, and is about 4 mm. Is preferred. In this case, the rotation speed of the turntable 2 is set to 1 rpm to 500 rpm, for example. In order to ensure the separation function of the separation region D, the size of the convex portion 4 and the lower surface (first ceiling surface 44) of the convex portion 4 and the rotation according to the range of use of the rotational speed of the turntable 2 and the like. The height h between the surface of the table 2 is set based on, for example, experiments. The separation gas is not limited to N ₂ gas, and an inert gas such as Ar gas can be used. However, the separation gas is not limited to the inert gas, and may be hydrogen gas or the like, and does not affect the film formation process. If so, the type of gas is not particularly limited.

  The lower surface of the top plate 11 of the vacuum vessel 1, that is, the ceiling surface viewed from the wafer placement area (recessed portion 24) of the rotary table 2 is the first ceiling surface 44 and the second higher than the ceiling surface 44 as described above. 1 in the circumferential direction, FIG. 1 shows a longitudinal section of a region where the high ceiling surface 45 is provided, and FIG. 5 shows a region where the low ceiling surface 44 is provided. The longitudinal section about is shown. As shown in FIGS. 2 and 5, the peripheral portion of the fan-shaped convex portion 4 (the portion on the outer edge side of the vacuum vessel 1) is bent in an L shape so as to face the outer end surface of the rotary table 2. Thus, a bent portion 46 is formed. Since the fan-shaped convex portion 4 is provided on the top plate 11 side and can be detached from the container main body 12, there is a slight gap between the outer peripheral surface of the bent portion 46 and the container main body 12. There is. The bent portion 46 is also provided for the purpose of preventing the reaction gas from entering from both sides in the same manner as the convex portion 4 and preventing the mixture of both reaction gases. The inner peripheral surface of the bent portion 46 and the rotary table are provided. The clearance between the outer end surface 2 and the clearance between the outer peripheral surface of the bent portion 46 and the container body 12 is set to the same dimension as the height h of the ceiling surface 44 with respect to the surface of the turntable 2, for example. In this example, it can be seen from the surface side region of the turntable 2 that the inner peripheral surface of the bent portion 46 constitutes the inner peripheral wall of the vacuum vessel 1.

  As shown in FIG. 5, the inner peripheral wall of the container main body 12 is formed in a vertical plane close to the outer peripheral surface of the bent portion 46 as shown in FIG. 5. For example, the vertical cross-sectional shape is cut out in a rectangular shape from the portion facing the outer end surface of the turntable 2 to the bottom surface portion 14 and is recessed outward. If this recessed portion is called an exhaust region 6, for example, two exhaust ports 61 and 62 are provided at the bottom of the exhaust region 6 as shown in FIGS. As shown in FIG. 1, these exhaust ports 61 and 62 are connected to a common vacuum pump 64, which is a vacuum exhaust means, via an exhaust pipe 63, respectively. In FIG. 1, reference numeral 65 denotes a pressure adjusting means, which may be provided for each of the exhaust ports 61 and 62 or may be shared.

The exhaust ports 61 and 62 are provided on both sides in the rotational direction of the separation region D when viewed in a plane as shown in FIG. 3 so that the separation action of the separation region D works reliably. The gas and NH ₃ gas) are exhausted exclusively. In this example, one exhaust port 61 is provided between the first reaction gas nozzle 31 and the separation region D adjacent to the reaction gas nozzle 31 on the downstream side in the rotation direction, and the other exhaust port 61 is activated. The gasification gas injector 32 and the separation region D adjacent to the injector 32 on the downstream side in the rotational direction are provided.

  The number of exhaust ports is not limited to two. For example, the number of exhaust ports is not limited to between the separation region D including the separation gas nozzle 42 and the activated gas injector 32 adjacent to the separation region D on the downstream side in the rotation direction. Three exhaust ports may be provided, or four or more. In this example, the exhaust ports 61 and 62 are provided at a position lower than the rotary table 2 so that the exhaust is exhausted from the gap between the inner peripheral wall of the vacuum vessel 1 and the peripheral edge of the rotary table 2. It is not restricted to providing in a bottom face part, You may provide in the side wall of the vacuum vessel 1. FIG. Further, when the exhaust ports 61 and 62 are provided on the side wall of the vacuum vessel 1, they may be provided at a position higher than the turntable 2. By providing the exhaust ports 61 and 62 in this way, the gas on the turntable 2 flows toward the outside of the turntable 2, so that particles are wound up as compared with the case of exhausting from the ceiling surface facing the turntable 2. This is advantageous in terms of being suppressed.

  As shown in FIGS. 1, 5, and 6, a heater unit 7 serving as a heating unit is provided in the space between the rotary table 2 and the bottom surface portion 14 of the vacuum vessel 1, and rotates via the rotary table 2. The wafer W on the table 2 is heated to a temperature determined by the process recipe, for example, 300 ° C. On the lower side near the periphery of the turntable 2, the heater unit 7 is placed all around in order to partition the atmosphere from the upper space of the turntable 2 to the exhaust region 6 and the atmosphere in which the heater unit 7 is placed. A cover member 71 is provided so as to surround it. The cover member 71 is formed in a flange shape with the upper edge bent outward, and the gap between the bent surface and the lower surface of the turntable 2 is reduced to allow gas to enter the cover member 71 from the outside. That is holding down.

The bottom surface portion 14 in the portion closer to the rotation center than the space where the heater unit 7 is disposed is near the center portion of the lower surface of the turntable 2 and is close to the core portion 21, and the space therebetween is narrow. The clearance between the inner peripheral surface of the through hole of the rotary shaft 22 that penetrates the bottom surface portion 14 and the rotary shaft 22 is narrow, and these narrow spaces communicate with the case body 20. The case body 20 is provided with a purge gas supply pipe 72 for supplying and purging N ₂ gas, which is a purge gas, into the narrow space. Further, a purge gas supply pipe 73 for purging the arrangement space of the heater unit 7 is provided on the bottom surface portion 14 of the vacuum vessel 1 at a plurality of positions in the circumferential direction at a position below the heater unit 7.

By providing the purge gas supply pipes 72 and 73 in this way, the space from the inside of the case body 20 to the arrangement space of the heater unit 7 is purged with N ₂ gas, as indicated by arrows in FIG. The purge gas is exhausted from the gap between the rotary table 2 and the cover member 71 to the exhaust ports 61 and 62 through the exhaust region 6. This prevents the DCS gas or NH ₃ gas from flowing from one of the first processing region P1 and the second processing region P2 described above to the other side via the lower part of the turntable 2, so that this purge gas Also plays the role of separation gas.

A separation gas supply pipe 51 is connected to the center of the top plate 11 of the vacuum vessel 1 so that N ₂ gas as separation gas is supplied to a space 52 between the top plate 11 and the core portion 21. It is configured. The separation gas supplied to the space 52 is directed toward the periphery along the surface of the turntable 2 on the wafer mounting region side through a narrow gap 50 between the protrusion 5 and the turntable 2 as shown in FIG. Will be discharged. Since the space surrounded by the protrusion 5 is filled with the separation gas, the reaction gas (DCS gas) is interposed between the first processing region P1 and the second processing region P2 via the center of the turntable 2. Alternatively, mixing of NH ₃ gas) is prevented. That is, this film forming apparatus is partitioned by the rotation center portion of the turntable 2 and the top plate 11 in order to separate the atmosphere of the first processing region P1 and the second processing region P2, and the separation gas is purged. In addition, it can be said that the discharge port for discharging the separation gas on the surface of the turntable 2 includes the central region C formed along the rotation direction. The discharge port here corresponds to a narrow gap 50 between the protruding portion 5 and the rotary table 2.

  Further, as shown in FIGS. 2 and 3, a transfer port 15 for transferring a wafer W as a substrate between the external transfer arm 10 and the rotary table 2 is formed on the side wall of the vacuum vessel 1. The transport port 15 is opened and closed by a gate valve (not shown). Further, since the wafer 24 is transferred to and from the transfer arm 10 at the position facing the transfer port 15 in the recess 24 which is a wafer placement area on the rotary table 2, the transfer position is below the rotary table 2. Are provided with lifting pins for passing through the recess 24 to lift the wafer W from the back surface and lifting mechanisms (both not shown).

As described above, the film forming apparatus described above is activated by converting the NH ₃ gas, which is the second reaction gas, into plasma and activating the gas before the gas loses its activity. 24) includes an activated gas injector 32 for supplying the surface of the wafer W placed on the surface 24). Hereinafter, the detailed configuration of the activated gas injector 32 will be described.

As shown in FIG. 7, the activated gas injector 32 includes a casing-like injector main body 321 that is a flat and elongated rectangular parallelepiped-shaped flow path forming member made of, for example, quartz having excellent plasma etching resistance. As shown in FIG. 9, the inside of the injector main body 321 is hollow. In this cavity, two spaces having different widths partitioned by a partition wall 324 are formed, and one side is a gas activation channel which is a gas activation channel for converting NH ₃ gas into plasma. The chamber 323 and the other side serve as a gas introduction chamber 322 which is a gas introduction channel for uniformly supplying the NH ₃ gas to the gas activation chamber. As shown in FIG. 9, the ratio of the width of the gas introduction chamber 322 to the width of the gas activation chamber 323 is approximately 2: 3, for example, and the volume of the gas introduction chamber 322 is larger.

As shown in FIGS. 8 and 9, the gas introduction chamber 322 has a tubular shape extending along the side wall of the injector main body 321, that is, along the partition wall 324 described later, from the proximal end side toward the distal end side. A gas introduction nozzle 34 is provided. Gas holes 341 are formed in the side peripheral wall of the gas introduction nozzle 34 facing the partition wall 324 at intervals in the length direction of the nozzle 34, and NH ₃ gas is discharged into the gas introduction chamber 322. can do. On the other hand, the base end side of the gas introduction nozzle 34 is connected to the gas introduction port 39 at the side wall portion of the injector main body 321, and this gas introduction port 39 is further described through, for example, the joint portion 38 as shown in FIG. The gas supply port 31a is connected to receive NH ₃ gas from a gas supply source (not shown).

In the upper part of the partition wall 324 facing the gas hole 341 of the gas introduction nozzle 34, a cutout portion which is a rectangular communication hole elongated in the length direction at a height position corresponding to the connection portion with the ceiling surface of the injector main body 321. 325 are provided at intervals along the length direction of the gas introduction chamber 322 (along the length direction of electrodes 36a36b described later), and the HN ₃ gas supplied into the gas introduction chamber 322 is gas. It can be supplied to the upper part of the activation chamber 323. Here, for example, the distance “L” from the gas hole 341 to the partition wall 324 of the gas introduction nozzle 34 is determined by, for example, the gas discharged from the adjacent gas hole 341 being diffused and mixed in the gas introduction chamber 322 in the length direction. The distance is set so as to have a uniform concentration in the length direction and can flow into each notch 325.

In the gas activation chamber 323, for example, ceramic sheath tubes 35a and 35b made of two dielectrics extend along the partition wall 324 from the proximal end side to the distal end side of the space 323. The sheath tubes 35a, 35b are arranged in parallel to each other in the horizontal direction at intervals. In the tubes of the sheath tubes 35a and 35b, electrodes 36a and 36b made of, for example, a nickel alloy having excellent heat resistance, for example, having a diameter of about 5 mm are inserted from the proximal end portion to the distal end portion. Accordingly, the pair of electrodes 36a and 36b are arranged so as to extend in parallel with each other at an interval of, for example, 4 mm between 2 mm and 10 mm, for example, in a state of being covered with ceramics that is a material of the sheath tubes 35a and 35b. It is in a state. The base end side of each electrode 36a, 36b is drawn out of the injector body 321, and is connected to a high frequency power source (both not shown) through a matching unit outside the vacuum vessel 1. These electrodes 36a and 36b pass a plasma generator 351 between the two sheath tubes 35a and 35b by supplying a high frequency power of 13.56 MHz, for example, 100 W in the range of 10 W to 200 W, for example. It plays the role of activating the NH ₃ gas to plasma by capacitively coupled plasma method. As shown in the enlarged plan view of FIG. 10, the two sheath tubes 35a and 35b penetrate the side wall on the proximal end side of the injector main body 321 and extend to the outside, and these sheath tubes 35a and 35b are It is covered with a protective tube 37 made of ceramic, for example, fixed to the side wall of the injector body 321.

A gas discharge hole 33 is formed on the bottom surface of the injector main body 321 on the lower side of the plasma generating unit 351 to discharge the NH ₃ gas activated by the plasma generating unit 351 and then activated to the lower side. The main body 321 is arranged at intervals in the length direction, that is, in the length direction of the electrodes 36a and 36b. Further, as shown in FIG. 9, the relationship between the distance “h” from the top of the sheath tube 35b to the ceiling surface of the gas activation chamber 351 and the distance “w” from the side wall surface of the sheath tube 35b to the opposing partition wall 324 is For example, when “h ≧ w” is satisfied, NH ₃ gas flowing in from the gas introduction chamber 322 bypasses the plasma generation unit and passes from between the sheath tube 35 b and the partition wall 324 to the gas discharge hole 33. The flowing flow is difficult to be formed.

  As shown in FIG. 7, the injector main body 321 having the above-described configuration is cantilevered at the base end side by fixing the joint portion 38 and the protective tube 37 described above to the side peripheral wall of the container main body 12, for example. The tip end side is arranged to extend toward the center of the turntable 2. The bottom surface of the injector main body 321 is such that the distance from the gas discharge hole 33 of the gas activation chamber 323 to the surface of the wafer W placed on the concave portion 24 of the turntable 2 is, for example, 10 mm in the range of 1 mm to 10 mm. Adjusted to position. Here, the injector main body 321 is configured to be detachable from the container main body 12, and an airtight state in the vacuum container 1 is maintained by using, for example, an O-ring (not shown) at a connection portion between the protective tube 37 and the container main body 12. ing.

  Further, the film forming apparatus of this embodiment is provided with a control unit 100 including a computer for controlling the operation of the entire apparatus, and a program for operating the apparatus is stored in the memory of the control unit 100. ing. This program has a set of steps so as to execute the operation of the apparatus described later, and is installed in the control unit 100 from a storage medium such as a hard disk, a compact disk, a magneto-optical disk, a memory card, or a flexible disk.

Next, the operation of the above embodiment will be described. First, a gate valve (not shown) is opened, and the wafer W is transferred from the outside to the recess 24 of the turntable 2 through the transfer port 15 by the transfer arm 10. This delivery is performed by raising and lowering a lifting pin (not shown) from the bottom side of the vacuum vessel through the through hole on the bottom surface of the recess 24 when the recess 24 stops at a position facing the transport port 15. The delivery of the wafer W is performed by intermittently rotating the turntable 2, and the wafer W is placed in each of the five recesses 24 of the turntable 2. Subsequently, the gate valve is closed, the vacuum vessel 64 is evacuated to a preset pressure, and the wafer W is heated by the heater unit 7 while the rotary table 2 is rotated clockwise. Specifically, the turntable 2 is heated in advance to, for example, 300 ° C. by the heater unit 7, and the wafer W is heated by being placed on the turntable 2. After confirming that the temperature of the wafer W has reached the set temperature by a temperature sensor (not shown), DCS gas and NH ₃ gas are discharged from the first reaction gas nozzle 31 and the activated gas injector 32, respectively, and the separation gas nozzle 41, N ₂ gas which is a separation gas is discharged from 42.

At this time, in the activated gas injector 32, the NH ₃ gas introduced from the gas supply port 32a is supplied to the gas introduction nozzle 34 and discharged into the gas introduction chamber 322 from each gas hole 341 provided in the side peripheral wall thereof. The The NH ₃ gas diffuses in the gas introduction chamber 322 and flows toward the partition wall 324 facing the gas hole 341 as shown in FIG. 11 while having a uniform concentration in the length direction of the injector body 321. The NH ₃ gas that reaches the partition wall 324 and is blocked from flowing up rises along the partition wall 324 and flows into the upper portion of the gas activation chamber 323 through the notch 325.

On the other hand, since the inside of the vacuum vessel 1 is in a vacuum atmosphere, the NH ₃ gas that has flowed into the upper part of the gas activation chamber 323 passes through the plasma generator 351 formed between the two sheath tubes 35a and 35b. Then, it flows downward toward the gas discharge hole 33. At this time, high-frequency power is supplied to the electrodes 36a and 36b in the sheath tubes 35a and 35b, and the NH ₃ gas passing through the plasma generator 351 is converted into a plasma and activated, and the gas discharge holes 33 are formed. It flows toward.

The activated NH ₃ gas is supplied into the vacuum vessel 1 immediately after passing through the plasma generating unit 351, so that the activated NH ₃ gas is supplied with little loss of activity or after flowing through a long nozzle. It reaches the surface of the wafer W in a state where there is little decrease in activity compared to the case where the The plasma generator 351 is formed between the two sheath tubes 35a and 35b extending in the length direction of the injector main body 321. The shape of the region of the plasma generator 351 viewed from the lower surface side is a gas discharge hole. Since it has a shape corresponding to the region where 33 is arranged, NH ₃ gas having a substantially uniform degree of activity is supplied to each gas discharge hole 33 immediately below it. As a result of this action, NH ₃ gas is supplied from the second reactive gas nozzle in a state in which the degree of activity is approximately equal in the length direction.

Returning to the description of the operation of the entire film forming apparatus, the wafer W is subjected to the second processing in which the first processing region P1 in which the first reaction gas nozzle 31 is provided and the activated gas injector 32 is provided by the rotation of the turntable 2. Since it alternately passes through the region P2, the DCS gas is adsorbed, and then the activated NH ₃ gas is adsorbed and these gas molecules react to form one or more silicon nitride molecular layers. Silicon nitride molecular layers are sequentially stacked to form a silicon oxide film having a predetermined thickness.

At this time, N ₂ gas, which is a separation gas, is also supplied from the separation gas supply pipe 51, whereby the central region C, that is, between the protrusion 5 and the center of the turntable 2, along the surface of the turntable 2. N ₂ gas is discharged. In this example, the inner peripheral wall of the container body 12 along the space below the second ceiling surface 45 where the reactive gas nozzle 31 and the activated gas injector 32 are disposed is notched as described above. Since the exhaust ports 61 and 62 are located below the wide space, the narrow space on the lower side of the first ceiling surface 44 and the respective pressures in the central region C are the first. The pressure in the space below the ceiling surface 45 of 2 is lower. FIG. 12 schematically shows the state of gas flow when gas is discharged from each part. NH ₃ gas discharged downward from the activated gas injector 32 and hitting the surface of the turntable 2 (both the surface of the wafer W and the surface of the non-mounting area of the wafer W) and traveling upstream along the surface. Flows into the exhaust region 6 between the peripheral edge of the rotary table 2 and the inner peripheral wall of the vacuum vessel 1 while being pushed back by the N ₂ gas flowing from the upstream side, and is exhausted through the exhaust port 62.

The NH ₃ gas discharged downward from the activated gas injector 32 and hitting the surface of the turntable 2 toward the downstream side in the rotation direction along the surface of the rotary table 2 flows and exhausts the N ₂ gas discharged from the central region C. Although it tends to go to the exhaust port 62 by the suction action of the port 62, a part thereof goes to the separation region D adjacent to the downstream side and tends to flow into the lower side of the fan-shaped convex portion 4. However, the height and the circumferential length of the ceiling surface 44 of the convex portion 4 are dimensions that can prevent gas from entering the lower side of the ceiling surface 44 in the process parameters during operation including the flow rate of each gas. Therefore, as shown in FIG. 4B, the NH ₃ gas hardly flows into the lower side of the fan-shaped convex portion 4 or even if it flows in a little, by the vicinity of the separation gas nozzle 41. Is not reachable, and is pushed back by the N ₂ gas discharged from the separation gas nozzle 41 to the upstream side in the rotation direction, that is, the processing region P2 side, together with the N ₂ gas discharged from the central region C, the turntable 2 Is exhausted to the exhaust port 62 through the exhaust region 6 from the gap between the peripheral edge of the vacuum vessel 1 and the inner peripheral wall of the vacuum vessel 1.

The DCS gas discharged downward from the first reactive gas nozzle 31 and directed toward the upstream side and the downstream side in the rotational direction along the surface of the turntable 2 is fan-shaped adjacent to the upstream and downstream sides in the rotational direction. Even if it cannot enter the lower side of the convex portion 4 at all or even if it enters, it is pushed back to the second processing region P1 side, together with the N ₂ gas discharged from the central region C, the periphery of the turntable 2 and the vacuum container 1 is exhausted to an exhaust port 61 through an exhaust region 6 from a gap with the inner peripheral wall. That is, in each separation region D, the intrusion of DCS gas or NH ₃ gas, which is a reactive gas flowing in the atmosphere, is prevented, but the gas molecules adsorbed on the wafer W remain as they are in the separation region, that is, fan-shaped convex portions. 4 passes below the lower ceiling surface 44 and contributes to film formation.

Furthermore, the DCS gas in the first processing region P1 (NH ₃ gas in the second processing region P2) tries to enter the central region C, but as shown in FIGS. 6 and 12, the central region Since the separation gas is discharged from C toward the peripheral edge of the turntable 2, the separation gas is prevented from intruding or is pushed back even if some intrusion occurs, and passes through the central region C for the second treatment. Inflow into the region P2 (first processing region P1) is prevented.

In the separation region D, the peripheral edge of the fan-shaped convex portion 4 is bent downward, and the gap between the bent portion 46 and the outer end surface of the turntable 2 is narrowed as described above, so that the gas Since the passage is substantially blocked, the DCS gas in the first processing region P1 (NH ₃ gas in the second processing region P2) passes through the outside of the turntable 2 to the second processing region P2 (the first processing region P1). Inflow into the processing region P1) is also prevented. Accordingly, the atmosphere of the first processing region P1 and the atmosphere of the second processing region P2 are completely separated by the two separation regions D, and DCS gas is exhausted to the exhaust port 61 and NH ₃ gas is exhausted to the exhaust port 62, respectively. Is done. As a result, both reactive gases, in this example, DCS gas and NH ₃ gas do not mix in the atmosphere or on the wafer W. In this example, since the lower side of the turntable 2 is purged with N ₂ gas, the gas flowing into the exhaust region 6 passes through the lower side of the turntable 2 and, for example, the ga DCS gas is NH ₃ gas. There is no risk of flowing into the supply area. When the film forming process is completed in this manner, the wafers W are sequentially carried out by the carrying arm 10 by an operation reverse to the carrying-in operation.

Here, an example of the processing parameters will be described. When the wafer W having a diameter of 300 mm is used as the substrate to be processed, the rotation speed of the turntable 2 is, for example, 1 rpm to 500 rpm, the process pressure is, for example, 1067 Pa (8 Torr), The heating temperature is, for example, 350 ° C., the flow rates of DCS gas and NH ₃ gas are, for example, 100 sccm and 10,000 sccm, respectively, the flow rate of N ₂ gas from the separation gas nozzles 41 and 42 is, for example, 20000 sccm, and the separation gas supply pipe 51 at the center of the vacuum vessel 1. The flow rate of N ₂ gas from is, for example, 5000 sccm. The number of reaction gas supply cycles for one wafer W, that is, the number of times the wafer W passes through each of the processing regions P1 and P2, varies depending on the target film thickness, but is 600 times, for example.

The film forming apparatus according to the present embodiment has the following effects. A plurality of wafers W are arranged in the rotation direction of the turntable 2, the turntable 2 is rotated, and the first processing area P1 and the second processing area P2 are sequentially passed to perform so-called ALD (or MLD). in the film forming apparatus, the NH ₃ gas activated gas injector 32 to supply the pair of electrodes 36a for activating the NH ₃ gas, equipped with 36b, the electrodes 36a, 36b are long injectors 32 It is provided so as to extend in parallel with each other along the vertical direction. For this reason, for example, an electrode is provided on the side wall of the vacuum vessel 1 of the film forming apparatus, and the activated NH ₃ gas is uniformly activated as compared with the case where the activated NH ₃ gas is supplied into the vacuum vessel 1 through an elongated nozzle. It has been NH ₃ it is possible to supply the gas, for example, at the wafer W plane supplied NH ₃ gas from the base end side and the distal side of the activated gas injector 32, the film quality uniform SiN films formed Can be membrane.

Further, as described above, for example, when an NH ₃ gas is supplied by providing an electrode on the side wall of the vacuum vessel 1, it is necessary to supply the NH ₃ gas to the tip side of the nozzle in a state as active as possible. It is necessary to form a plasma with a high degree of dissociation by applying strong high-frequency power to the electrodes. In contrast, the activated gas injector 32 according to the present embodiment is disposed at a position immediately above the wafer W placed on the turntable 2, for example, at a height of, for example, 10 mm within a range of 1 mm to 10 mm. Since the electrodes 36a and 36b are provided in the injector main body 321, the activity necessary for the reaction during the film formation can be obtained without increasing the degree of plasma dissociation as much as in the above example. As a result, film formation can be performed without increasing the energy consumption required for plasma generation.

  Further, in the film forming apparatus according to the present embodiment, a plurality of wafers W are arranged in the rotation direction of the turntable 2, and the turntable 2 is rotated so that the first processing region P1 and the second processing region P2 are sequentially arranged. So as to perform so-called ALD (or MLD), the film forming process can be performed with high throughput. A separation region D having a low ceiling surface is provided between the first processing region P1 and the second processing region P2 in the rotation direction, and the center divided by the rotation center portion of the turntable 2 and the vacuum vessel 1 The separation gas is discharged from the part area C toward the periphery of the turntable 2, and the reaction gas is separated from the periphery of the turntable 2 together with the separation gas diffused on both sides of the separation area D and the separation gas discharged from the center part area C. And the inner peripheral wall of the vacuum vessel are evacuated to prevent mixing of both reaction gases. As a result, a good film forming process can be performed, and reaction is generated on the turntable 2. The generation of particles is suppressed as much as possible by suppressing as little as possible. The present invention can also be applied to the case where one wafer W is placed on the turntable 2.

  Furthermore, since the activated gas injector 32 is configured to be detachable from the container main body 12 of the vacuum vessel 1 as described above, maintenance and modification of the injector 32 and replacement with a new reactive gas nozzle are easy. . However, the activated gas injector 32 is not limited to being fixed to the side peripheral wall of the container body 12, and may be configured to be fixed to the bottom surface of the top plate 11 of the vacuum container 1, for example.

  Next, an activated gas injector 32a according to the second embodiment will be described with reference to FIGS. In these drawings, those having the same functions as those of the activated gas injector 32 according to the first embodiment described above are denoted by the same reference numerals as those shown in FIGS. .

The activated gas injector 32a according to the second embodiment has excellent plasma etching resistance and is easier to process than the quartz that is the material of the activated gas injector 32 according to the first embodiment described above. Made of high-purity alumina. In the injector main body 321 of the activated gas injector 32a according to the present embodiment, a gas introduction port 39 is connected to the side wall portion on the proximal end side of the gas introduction chamber 322 as shown in FIG. The point that NH ₃ gas is introduced into the gas introduction chamber 322 from the opening is different from the first embodiment in which the gas introduction nozzle 34 is used. In addition, a communication hole 326 that connects the gas introduction chamber 322 and the gas activation chamber 323 is arranged at an approximately central height position of the partition wall 324 at intervals in the length direction of the partition wall 324. This is different from the first embodiment in which a rectangular notch 325 is provided in the upper part of the partition wall 324.

  On the other hand, with respect to the gas activation chamber 323, as shown in FIGS. 13 and 14, arrangement spaces 353 and 355 of the electrodes 36a and 36b are formed by dielectric sheath members 352 and 354, and these arrangement spaces 353 are formed. 355 is different from the first embodiment in which the sheath tubes 35a and 35b are used in that the electrodes 36a and 36b are inserted through the tube 355. In this example, two electrodes are arranged in parallel in the vertical direction, and a gap corresponding to the plasma generating portion 351 is formed between the lower surface of the upper sheath member 352 and the upper surface of the lower sheath member 354. Two sheath members 352 and 354 are arranged so as to be so. These sheath members 352 and 354 are made of, for example, the same high-purity alumina as the injector body, and are attached to the injector body by, for example, joining the separately processed sheath members 352 and 354 with a ceramic adhesive or the like. Yes. Of course, if processing is possible, the activated gas injector 32a according to the present embodiment may be made of quartz.

As a result, as in the case described in the first embodiment, the electrodes 36a and 36b are arranged with an interval of, for example, 4 mm between 2 mm and 10 mm, and apply high frequency power from an external high frequency power source. As a result, the NH ₃ gas flowing through the plasma generator 351 can be converted into plasma.
As shown in FIG. 14, the lower sheath member 354 is disposed at a position away from the side wall portion of the injector body 321, and the NH ₃ gas that has passed through the plasma generating portion 351 is separated from the side wall portion and the sheath member 354. After passing through the space formed between the two, the gas is supplied into the vacuum chamber 1 through the gas discharge holes 33.

Hereinafter, the operation of the activated gas injector 32a according to the second embodiment will be described. The NH ₃ gas introduced from the gas introduction port 39 is introduced from the proximal end side to the distal end side as shown in FIG. While flowing in the chamber 322, it flows into the gas activation chamber 323 through each communication hole 326. The NH ₃ gas that has flowed into the gas activation chamber 323 flows into a plasma by passing through a plasma generation unit 351 formed between the upper and lower sheath members 352 and 354 and is activated to enter the gas discharge hole 33. It flows toward. Also in this example, since the activated NH ₃ gas is supplied into the vacuum container 1 immediately after passing through the plasma generator 351, the NH ₃ gas can be supplied to the surface of the wafer W in a highly active state. Further, in the activated gas injector 32a according to the present embodiment, since there is only one flow path from the communication hole 326 of the partition wall 324 to the gas discharge hole 33, all NH ₃ gas passes through the plasma generator 351. The NH ₃ gas can be converted into plasma efficiently.

  Here, the shape of the injector main body 321 forming the flow path forming member is not limited to the case-shaped one shown in the first and second embodiments. For example, as shown in FIGS. 16 and 17, the activated gas injector 32 b may be configured by using a circular tubular injector body 321. The activated gas injector 32b according to the example includes a gas introduction nozzle 34 inserted into, for example, a tubular injector body 321 to form a double circular tube structure, and the gas introduction nozzle 34 is formed below the gas introduction nozzle 34. A pair of electrodes 36 a and 36 b are arranged so as to extend along the length direction of 34. The gas introduction nozzle 34 is disposed in the injector main body 321 with the gas hole 341 facing upward, for example, and is located below the gas introduction nozzle 34 and on the outer wall surface of the gas introduction nozzle 34 and the inner wall surface of the injector main body 321. In the space between the electrodes 36a and 36b, the electrodes 36a and 36b are inserted in the sheath tubes 35a and 35b, respectively. As a result, a plasma generator 351 sandwiched between the pair of electrodes 36a and 36b is formed above the gas discharge hole 33 provided in the injector body 321.

The NH ₃ gas supplied from the gas introduction nozzle 34 into the injector main body 321 is formed between the outer wall surface of the gas introduction nozzle 34 and the inner wall surface of the injector main body 321 as indicated by arrows in FIG. After reaching the plasma generation part 351 through the space between them, the part 351 is turned into plasma and activated, and then supplied to the surface of the wafer W through the gas discharge holes 33. In this example, the space inside the gas introduction nozzle 34 corresponds to the gas introduction flow path 322, and the space between the gas introduction nozzle 34 and the injector main body 321 corresponds to the gas activation flow path 323. The tube wall of the gas introduction nozzle 34 corresponds to a partition wall that partitions the gas introduction channel 322 and the gas activation channel 323, and the gas hole 341 provided in the tube wall has these two channels. It corresponds to a communication hole connecting 322 and 323.

  Next, an activated gas injector 32c according to a third embodiment that uses a heater as means for activating the reaction gas will be described. 18 and 19 are a perspective view and a longitudinal sectional view showing the internal structure of the activated gas injector 32c according to the third embodiment, respectively, and the activated gas injector according to the first embodiment already described. Those having the same function as 32 are denoted by the same reference numerals as those shown in FIGS.

  The activated gas injector 32c according to the third embodiment includes, for example, a gas introduction chamber 322 that is a gas introduction flow path and a gas inside a casing-like high-purity alumina injector body 321 that forms a flow path forming member. A gas activation chamber 323, which is an activation channel, is formed by partitioning with a partition wall 324. A gas introduction port 39 is connected to the side wall portion on the proximal end side of the gas introduction chamber 322, while a heater 30 described later is provided in the gas activation chamber 323, and these two spaces 322 and 323 include The partition walls 324 communicate with each other through communication holes 326 arranged at intervals in the length direction.

As shown in the perspective view of FIG. 20, the heater 30 in the gas activation chamber 323 includes, for example, a cylindrical body 302 around which a resistance heating wire 303 is wound, and a cylindrical cover body 301 that covers the cylindrical body 302. It has a double tube structure. The cylindrical body 302 is, for example, a cylinder made of ceramic such as alumina, and a resistance heating wire 303 penetrates the cylindrical body 302 from the proximal end side toward the distal end side. The resistance heating wire 303 taken out from the distal end of the cylindrical body 302 is wound toward the proximal end side along the outer peripheral surface of the cylindrical body 302, and generates heat due to electric power supplied from a power supply unit 307 described later. Thus, the NH ₃ gas supplied into the gas activation chamber 323 is heated and activated.

  The cover body 301 is an elongated cylindrical member that covers the cylindrical body 302 described above, and is configured by a transparent member such as quartz, for example, and radiates heat from the resistance heating wire 303 to the gas activation chamber 323. Can be transmitted inward. As shown in FIG. 18, the front end side of the cover body 301 is closed, while the base end side is fixed to the side wall portion of the injector body 321, and the inside of the cover body 301 is the gas activation chamber 323. It has an isolated atmosphere. The tubular body 302 is fixed by a body that penetrates the side wall portion of the injector main body 321, and the resistance heating wire 303 described above is drawn out from the proximal end side of the tubular body 302 and is shown in FIG. The power supply line 304 is connected to the power supply unit 307 through the inside.

  Further, for example, as shown in FIG. 20, a temperature detection end 305 made of, for example, a thermocouple is inserted in the space between the cover body 301 and the cylindrical body 302, and the lead wire drawn out from the temperature detection end 305. As shown in FIG. 18, 30 is connected to the temperature detector 308 through a protective tube 37 outside the injector body 321. The temperature detection unit 308 plays a role of outputting temperature data measured based on the electromotive force of the temperature detection end 305 that is, for example, a thermocouple to the control unit 100 described above, and the control unit 100 measures the measured temperature data. The output of the resistance heating wire 303 can be adjusted by increasing or decreasing the output of the power supply unit 307 based on the above.

Hereinafter, the operation of the activated gas injector 32c according to the third embodiment will be described. The NH ₃ gas introduced from the gas introduction port 39 flows in the gas introduction chamber 322 from the proximal end side to the distal end side. Then, it flows into the gas activation chamber 323 through each communication hole 326. The NH ₃ gas flowing into the gas activation chamber 323 is heated by receiving radiant heat radiated from the heater 30, becomes activated, and flows toward the gas discharge hole 33. Also in this example, since the activated NH ₃ gas is supplied into the vacuum chamber 1 immediately after being activated in the gas activation chamber 323, the NH ₃ gas can be supplied to the surface of the wafer W in a highly active state. Further, since the heat radiation from the heater 30 is used, the NH ₃ gas flowing in the gas activation chamber 323 can be evenly heated. For example, the activation method using the plasma described above can be used. Thus, there is no need to adjust the flow path so that the NH ₃ gas flows through the region where the plasma is formed, and the structure of the activation injector 32c can be simplified.

When the heater 30 is used, for example, the entire interior of the injector body 321 without the partition wall 324 is provided, as in the activated gas injector 32d according to the fourth embodiment shown in FIGS. The gas activation chamber 323 may be used. In this example, for example, a gas introduction nozzle 34 is inserted into the gas activation chamber 323 from the gas introduction port 39 in parallel with the heater 30, and NH ₃ gas is introduced into the side wall surface of the gas introduction nozzle 34. The gas is introduced into the gas activation chamber 323 through the provided gas holes 341, heated, and supplied to the wafer W through the gas discharge holes 33 in an activated state. That is, in the activated gas injector 32d shown in FIG. 21 and FIG. 22, the space in the gas introduction nozzle 34 corresponds to a gas introduction flow path, and the tube wall of the gas introduction nozzle 34 is connected to the gas introduction flow path and the gas. This corresponds to a partition wall with the activation chamber 323. In this case, the gas hole 341 provided in the nozzle 34 corresponds to a communication hole between the gas introduction channel and the gas activation chamber (gas activation channel) 323.

  Also in this example, the injector main body 321 is not limited to a casing shape. For example, in the activated gas injector 32b having a cylindrical main body 321 shown in FIGS. 16 and 17, the third and fourth embodiments described above are provided below the gas introduction nozzle 34 in place of the electrodes 36a and 36b. An activated gas injector having the heater 30 shown therein is also included in the scope of the present invention.

As the processing gas applied in the present invention, in addition to the above-described example, for example, monosilane, HCD [hexadichlorosilane], or the like may be used as a reactive gas that is a raw material of Si constituting the SiN film. N ₂ , N ₂ O, or the like may be used as a reaction gas as a raw material. Among these source gases, as described in each of the above-described embodiments, the reaction gas that is a source of N may be activated by plasma, or the reaction gas that is a source of Si may be converted to plasma. Good.

The film forming apparatus according to this embodiment is not limited to the process of forming a SiN film, and may be applied to a process of forming a SiO ₂ film, for example. In this case, for example, BTBAS [Bistal Butylaminosilane], DCS [Dichlorosilane], HCD [Hexachlorodisilane], TMA [Trimethylaluminum], 3DMAS [Trisdimethylaminosilane], TEMAZ are used as the first reaction gas to be a raw material gas. [Tetrakisethylmethylaminozirconium], TEMHF [Tetrakisethylmethylaminohafnium], Sr (THD) ₂ [Strontium bistetramethylheptanedionato], Ti (MPD) (THD) [Titanium methylpentanedionatobistetramethylheptaneedo Nato], monoaminosilane, and the like, and O ₃ gas [ozone gas], water vapor, etc. are employed as the second reactive gas that is an oxidizing gas that oxidizes these raw material gases. Among these reactive gases, for example, oxidizing gas Reaction to supply The activated gas injectors 32 and 32a to 32d described in the first and second embodiments may be applied to the gas nozzle. Needless to say, the activated gas injectors 32, 32a to 32d may also be applied in the supply of the source gas.

Further, the configuration of each of the activated gas injectors 32 and 32a shown in the first and second embodiments is not limited to the configuration example illustrated in each embodiment. Alternatively, the gas discharge hole 33 for discharging NH ₃ gas may be formed in a slit shape. In the second embodiment, the sheath members 352 and 354 are arranged side by side on the bottom surface of the injector main body 321 at intervals, and gas is discharged below the plasma generating portion 351 formed between the sheath members 352 and 354. It is good also as a structure which arrange | positions the hole 33. FIG. Furthermore, in the second embodiment, instead of dividing the interior of the injector body 321 into two spaces 322 and 323 by the partition wall 324, the first implementation is performed in the gas activation chamber 323 integrated without the partition wall 324. The gas introduction nozzle 34 shown in the embodiment may be inserted, and NH ₃ gas may be discharged from the gas introduction nozzle 34 toward the plasma generation unit 351.

  The first ceiling surface 44, which forms a narrow space located on both sides of the separation gas supply nozzle 41 (42), has the separation gas supply nozzle 41 shown in FIGS. 23 (a) and 23 (b). As representatively shown, for example, when a wafer W having a diameter of 300 mm is used as the substrate to be processed, it is preferable that the width dimension L along the rotation direction of the turntable 2 is 50 mm or more at the portion through which the center WO of the wafer W passes. . In order to effectively prevent the reaction gas from entering the lower part (narrow space) of the convex part 4 from both sides of the convex part 4, when the width dimension L is short, the first It is also necessary to reduce the distance between the ceiling surface 44 and the turntable 2. Further, if the distance between the first ceiling surface 44 and the turntable 2 is set to a certain size, the speed of the turntable 2 increases as the distance from the rotation center of the turntable 2 increases. The width dimension L required to obtain the intrusion prevention effect becomes longer as the distance from the rotation center increases. Considering from this point of view, if the width dimension L in the portion through which the center WO of the wafer W passes is smaller than 50 mm, the distance between the first ceiling surface 44 and the turntable 2 needs to be considerably reduced. In order to prevent a collision between the rotary table 2 or the wafer W and the ceiling surface 44 when the rotary table 2 is rotated, a device for suppressing the swing of the rotary table 2 as much as possible is required. Furthermore, the higher the rotational speed of the turntable 2, the easier it is for the reactive gas to enter from the upstream side of the convex part 4 to the lower side of the convex part 4, so if the width dimension L is smaller than 50 mm, The rotational speed of the table 2 must be lowered, which is not a good idea in terms of throughput. Therefore, the width L is preferably 50 mm or more, but even if it is 50 mm or less, the effect of the present invention is not obtained. That is, the width dimension L is preferably 1/10 to 1/1 of the diameter of the wafer W, and more preferably about 1/6 or more. In FIG. 23 (a), the illustration of the recess 24 is omitted for convenience of illustration.

  Here, examples other than the above-described embodiment will be given for each layout of the processing regions P1 and P2 and the separation region D. FIG. 24 shows, for example, the case where the activated gas injector 32 (the same applies to the case where the activated gas injectors 32a, 32b, 32c, and 32d described above are replaced in the description in the following drawings) is rotated more than the transport port 15. This is an example in which the table 2 is positioned upstream in the rotation direction, and the same effect can be obtained even with such a layout.

  Further, in the present invention, it is necessary to provide a low ceiling surface (first ceiling surface) 44 in order to form a narrow space on both sides of the separation gas nozzle 41 (42). However, as shown in FIG. 31 (activated gas injector 32) is provided with a similar low ceiling surface on both sides thereof, and the ceiling surface is continuous, that is, where the separation gas nozzle 41 (42) and the reaction gas nozzle 31 (activation gas injector 32) are provided. Except for the above, the same effect can be obtained by providing the convex portion 4 over the entire area facing the rotary table 2. From another viewpoint, this configuration is an example in which the first ceiling surfaces 44 on both sides of the separation gas nozzle 41 (42) extend to the reaction gas nozzle 31 (the activated gas injector 32). In this case, the separation gas diffuses on both sides of the separation gas nozzle 41 (42), the reaction gas diffuses on both sides of the reaction gas nozzle 31 (activation gas injector 32), and both gases are below the convex portion 4 ( These gases are exhausted from an exhaust port 61 (62) located between the reaction gas nozzle 31 (activated gas injector 32) and the separation gas nozzle 42 (41). .

In the above embodiment, the rotary shaft 22 of the turntable 2 is located at the center of the vacuum vessel 1, and the separation gas is purged into the space between the center of the turntable 2 and the upper surface of the vacuum vessel 1. However, the present invention may be configured as shown in FIG. In the film forming apparatus of FIG. 26, the bottom surface portion 14 of the central region of the vacuum vessel 1 protrudes downward to form the accommodating space 80 of the driving unit, and the recess 80a is formed on the upper surface of the central region of the vacuum vessel 1. And the DCS gas from the first reaction gas nozzle 31 is activated by interposing a column 81 between the bottom of the housing space 80 and the upper surface of the recess 80a of the vacuum vessel 1 at the center of the vacuum vessel 1. The NH ₃ gas from the gas injector 32 is prevented from being mixed through the central portion.

Regarding the mechanism for rotating the rotary table 2, a rotary sleeve 82 is provided so as to surround the support column 81, and the ring-shaped rotary table 2 is provided along the rotary sleeve 81. A driving gear portion 84 driven by a motor 83 is provided in the accommodation space 80, and the rotating sleeve 82 is rotated by the driving gear portion 84 via a gear portion 85 formed on the outer periphery of the lower portion of the rotating sleeve 82. I am doing so. Reference numerals 86, 87 and 88 denote bearings. A purge gas supply pipe 74 is connected to the bottom of the housing space 80, and a purge gas supply pipe 75 for supplying purge gas to the space between the side surface of the recess 80 a and the upper end of the rotary sleeve 82 is provided in the vacuum vessel 1. Connected to the top. In FIG. 26, the openings for supplying the purge gas to the space between the side surface of the recess 80a and the upper end of the rotating sleeve 82 are shown in two places on the left and right sides. In order to prevent the DCS gas and the NH ₃ gas from being mixed, it is preferable to design the number of openings (purge gas supply ports).

  In the embodiment of FIG. 26, when viewed from the turntable 2 side, the space between the side surface of the recess 80a and the upper end of the rotary sleeve 82 corresponds to the separation gas discharge hole, and the separation gas discharge hole, rotation The sleeve 82 and the support column 81 constitute a central region located in the central portion of the vacuum vessel 1.

  Furthermore, the film forming apparatus to which the various reactive gas nozzles according to the embodiment can be applied is not limited to the rotary table type film forming apparatus shown in FIGS. For example, the reactive gas nozzles of the present invention are applied to a type of film forming apparatus in which the wafer W is placed on a belt conveyor instead of the rotary table 2 and the wafer W is transferred into a processing chamber partitioned from each other to perform film forming processing. Alternatively, it may be applied to a single-wafer type film forming apparatus in which the wafers W are mounted one by one on a fixed mounting table.

  A substrate processing apparatus using the film forming apparatus described above is shown in FIG. In FIG. 27, 101 is a sealed transfer container called a hoop for storing 25 wafers, 102 is an atmospheric transfer chamber in which a transfer arm 103 is disposed, and 104 and 105 are atmospheres between an air atmosphere and a vacuum atmosphere. Is a load lock chamber (preliminary vacuum chamber) that can be switched, 106 is a vacuum transfer chamber in which two transfer arms 107 are arranged, and 108 and 109 are film forming apparatuses of the present invention. The transfer container 101 is transferred from the outside to a loading / unloading port equipped with a mounting table (not shown), connected to the atmospheric transfer chamber 102, then opened by an opening / closing mechanism (not shown), and transferred from the transfer container 101 by the transfer arm 103. The wafer is removed. Next, the load lock chamber 104 (105) is loaded and the chamber is switched from the atmospheric atmosphere to the vacuum atmosphere. Thereafter, the wafer is taken out by the transfer arm 107 and loaded into one of the film deposition apparatuses 108 and 109, and the film formation described above is performed. Processed. Thus, for example, by providing a plurality of, for example, two film forming apparatuses of the present invention for processing five sheets, so-called ALD (MLD) can be performed with high throughput.

  In the present invention, for example, BTBAS gas and O3 gas are used as the first reaction gas and the second reaction gas, respectively, and these reaction gases are activated in the activated gas injector 32 (32a to 32d) described above. As described above, the SiO2 film may be formed. However, when the SiO2 film is formed, an activated gas injector may be used to modify the SiO2 film. A specific film forming apparatus provided with an activated gas injector for modifying the SiO2 film will be described with reference to FIGS. In the following examples, parts having the same configurations as those of the above-described examples are denoted by the same reference numerals and description thereof is omitted.

  As shown in FIGS. 28 and 29, the film forming apparatus is provided with a second reactive gas nozzle 210 for supplying O 3 gas, which is the second reactive gas, as second reactive gas supply means. The nozzle 210 is disposed on the upstream side of the transfer port 15 described above in the rotation direction of the turntable 2. The nozzle 210 is configured in substantially the same manner as the first reactive gas nozzle 31, and the gas supply port 211, which is the base end, extends horizontally in the direction intersecting the rotation direction of the turntable 2. It is airtightly attached through the peripheral wall. The nozzle 210 is connected to a supply source of O 3 gas (not shown) outside the vacuum vessel 1 through a gas supply port 211. Similarly to the nozzle 31 described above, the nozzle 210 is formed so that a discharge port (not shown) for discharging the reaction gas is directed downward, and the discharge port has a diameter of, for example, 0.5 mm, The nozzles 210 are arranged in the length direction so that the interval is, for example, 10 mm. The area below the nozzle 210 corresponds to the second processing area P2 described above.

In addition, as shown in FIG. 30, in the rotation direction of the turntable 2, there is a gap between the transport port 15 (second reaction gas nozzle 210) and the separation region D on the upstream side of the first reaction gas nozzle 31. Similarly to the activated gas injector 32, an activated gas injector (plasma gas injector) 220 for activating (ionizing) the processing gas is provided.
The activated gas injector 220 includes a cover body (airflow forming member) 221. FIG. 31A shows a state in which the cover body 221 is removed, and FIG. 31B shows an appearance in which the cover body 221 is arranged. Is shown. That is, as shown in FIGS. 31 and 32, the activated gas injector 220 is opened from the lower surface side and along the radial direction of the turntable 2, in this example, from the inner edge of the center of the turntable 2 in the wafer W. The cover body 221 that is an approximately box-shaped flat housing that extends over the outer edge of the rotary table 2 and extends horizontally, and the above-described cover body 221 that is housed along the length direction. A gas introduction nozzle 34 and a pair of sheath tubes 35a and 35b are provided.
The cover body 221 is made of, for example, quartz, and is suspended from the top plate 11 of the vacuum vessel 1 by a support member 223 at a plurality of locations along the length direction as shown in FIG. Yes. Further, as shown in FIG. 31 (b), the cover body 221 is bent horizontally at a substantially right angle by bending the lower end portions of both side surfaces in the rotation direction (circumferential direction) of the turntable 2 to the left and right sides. An air flow restricting surface 222 is formed so as to extend, and a lower end portion of a side end surface facing the central region C is bent at a substantially right angle toward the central region C so as to extend horizontally in a flange shape. A restriction surface 222 (same as the air flow restriction surface 222 is attached for convenience) is formed, and the overall appearance is a so-called hat shape. Note that the support member 223 is not shown except in FIG.

  As shown in FIG. 32, the air flow restricting surface 222 is formed by narrowing the gap t between the lower end surface of the air flow restricting surface 222 and the upper surface of the rotary table 2 horizontally, for example, to 2 mm or less. This is to prevent the internal atmosphere from entering the inner region of the cover body 221 through the gap t. At this time, the flow rate of the gas flowing along with the rotation of the rotary table 2 increases as it goes from the radially inner peripheral side to the outer peripheral side of the rotary table 2, and the risk of gas entering the cover body 221 increases. Therefore, the air flow restriction surface 222 is formed so that the width dimension u increases as it goes from the radially inner periphery side to the outer periphery side of the turntable 2. As an example of the width dimension u of the air flow regulating surface 222, when the wafer W is positioned below the cover body 221, the width dimension u of the portion facing the outer edge of the wafer W on the rotation center side of the turntable 2 is For example, the width dimension u of the portion facing the outer edge of the wafer W on the inner peripheral wall side of the vacuum vessel 1 is 80 mm, for example, 130 mm. On the other hand, the dimension between the upper end surface of the cover body 221 and the lower surface of the top plate 11 of the vacuum vessel 1 at the portion where the gas introduction nozzle 34 and the sheath tubes 35a and 35b are accommodated is larger than the gap t. Thus, it is set to 20 mm or more, for example, 30 mm.

The gas introduction nozzle 34 and the sheath pipes 35a and 35b are arranged to be processed gas for generating plasma from the gas holes 341 of the gas introduction nozzle 34 with respect to the sheath pipes 35a and 35b arranged horizontally and spaced apart from each other. For example, Ar (argon) gas is configured to be discharged horizontally and, as will be described later, is attached airtight so as to extend horizontally from the side wall of the vacuum vessel 1, for example.
The sheath tubes 35a and 35b are made of high-purity quartz in this example, and the surface thereof is coated with, for example, an yttria (yttrium oxide, Y2O3) film having excellent plasma etching resistance so as to have a film thickness of, for example, about 100 μm. ing. The sheath tubes 35a and 35b are arranged so that the distance between the electrodes 36a and 36b inserted through the sheath tubes 35a and 35b is 10 mm or less, for example, 4.0 mm. These electrodes 36a and 36b are configured such that, for example, high-frequency power of 13.56 MHz, for example, 500 W or less is supplied from a high-frequency power source outside the vacuum vessel 1 via a matching unit (both not shown). . In this example, the space inside the gas introduction nozzle 34 corresponds to the gas introduction flow path, the cover body 221 corresponds to the flow path forming member, and the sheath tubes 35a and 35b are arranged to activate the processing gas. The region to be processed corresponds to the gas activation channel. The tube wall of the gas introduction nozzle 34 corresponds to a partition wall that divides the gas introduction flow path and the gas activation flow path, and the gas hole 341 of the gas introduction nozzle 34 has the gas introduction flow path and the gas activation flow path. It corresponds to a communication hole connecting the chemical flow path. Furthermore, the lower region of the sheath tubes 35a and 35b corresponds to a discharge port that discharges the activated gas to the wafer W.

  Next, a method for attaching the sheath tubes 35a and 35b to the side peripheral wall of the vacuum vessel 1 will be described. As shown in FIG. 33 (a), a through hole 230 for attaching the above-described protective tube 37 provided at the end of the sheath tube 35a, 35b is formed in the side peripheral wall of the vacuum vessel 1, In the through hole 230, the outer diameter is formed smaller than the opening diameter of the through hole 230 so as to extend from the outside of the vacuum container 1, and the inner peripheral surface at the tip (inside of the vacuum container 1) is formed. A substantially cylindrical outer sleeve 231 formed so as to taper toward the inside of the vacuum vessel 1 is inserted. The outer sleeve 231 and the side wall of the vacuum vessel 1 are hermetically fixed via an O-ring (not shown) at a flange portion 232 formed on the end surface of the outer sleeve 231. In FIG. 33, reference numeral 233 denotes a fixing hole through which the bolt 234 passes through the flange portion 232 to fix the outer sleeve 231 and the side wall of the vacuum vessel 1 in an airtight manner. As shown in FIG. It is formed so that a gap is interposed between the screw portion 234 in the vertical direction. Therefore, the outer sleeve 231 is fixed by the bolt 234 while being lifted upward or lowered downward in the through hole 230, so that the protective tube 37 is moved up and down in parallel with the outer sleeve 231, and the sheath tube 35a, The distance between the lower end surface of 35b and the surface of the wafer W on the turntable 2 can be adjusted between 3.0 mm and 9.0 mm, for example.

  In the outer sleeve 231, an O-ring 236, an inner sleeve 237, an O-ring 236, and a connection pipe 235 are provided in order from the inner side of the vacuum vessel 1 so as to cover the outer peripheral side of the protective pipe 37. When the connecting tube 235 is pressed from the outside of the vacuum vessel 1 by the fixing member that does not, the outer sleeve 231 and the protective tube 37 are tightly adhered to each other via the O-rings 236 and 236. In FIG. 33, reference numeral 238 denotes a power supply line extending from the sheath tubes 35a and 35b to the outside of the vacuum vessel 1.

  In addition, an inclination adjusting mechanism 240 is provided inside the vacuum vessel 1 so as to support the protective tube 37 from below. The tilt adjustment mechanism 240 is a plate-like member formed along the inner peripheral wall of the vacuum vessel 1, for example, and the height position of the upper end surface is adjusted by an adjustment screw 241 such as a bolt, for example. It is configured to be fixed to the inner peripheral wall. Therefore, by adjusting the height position of the upper end surface of the tilt adjusting mechanism 240, the protective tube 37 is kept in a vacuum container while the base end side (the end portion in the outer sleeve 231) is airtightly crimped by the O-ring 236. Since the end portion on the one side moves up and down, the protective tube 37 (sheath tubes 35a and 35b) is inclined in the radial direction of the turntable 2. An example in which the sheath tubes 35a and 35b are inclined in this way will be described. For example, as shown in FIG. When positioned, for example, the height dimension between the lower end positions of the sheath tubes 35 a and 35 b and the peripheral edge of the wafer W close to the rotation center of the turntable 2 and the peripheral edge of the wafer W close to the inner peripheral wall of the vacuum vessel 1. Are adjusted to 6.0 mm and 4.0 mm, respectively. The gas introduction nozzle 34 described above is also configured to be able to tilt up and down together with the protective tube 37 (sheath tubes 35a and 35b). In FIG. 34, the inclination of the sheath tubes 35a and 35b is exaggerated.

  As shown in FIGS. 28 and 29, the above-described first reaction gas nozzle 31 is configured to be supplied with BTBAS gas, which is the first reaction gas, from a gas supply source (not shown). In order to prevent the BTBAS gas from being diluted with the separation gas and to increase the contact time between the BTBAS gas and the wafer W, the air flow restricting member 250 having substantially the same configuration as the cover body 221 is used for the nozzle 31. It is provided to cover.

  Next, the operation in this embodiment will be described. Similarly to the above-described example, for example, five wafers W are mounted on the rotary table 2, and the inside of the vacuum container 1 is adjusted to a predetermined degree of vacuum, for example, 286.6 Pa (2 Torr) to 1066.6 Pa (8 Torr). At the same time, the rotary table 2 is rotated at 240 rpm, for example. Further, the wafer W is heated to 350 ° C., for example, and BTBAS gas and O 3 gas are supplied from the nozzles 31 and 200, respectively, at a predetermined flow rate, for example, 100 sccm and 10000 sccm, and N 2 gas is supplied to the separation regions D, respectively. A purge gas is supplied at a predetermined flow rate, for example, at a flow rate of, for example, 20000 sccm. Further, a processing gas for generating plasma, such as Ar gas, is supplied to the gas introduction nozzle 34 at a predetermined flow rate, for example, 5000 sccm, and a predetermined value of power, for example, 500 W, is applied to the electrodes 36a, 36b from a high-frequency power source (not shown). Supply.

  In the activated gas injector 220, the Ar gas discharged from the gas introduction nozzle 34 toward the sheath tubes 35a and 35b is activated by the high frequency supplied between the sheath tubes 35a and 35b, and Ar ions and Ar radicals are activated. Thus, these active species (plasma) are discharged downward. At this time, since the cover body 221 is provided so as to cover the sheath tubes 35 a and 35 and the gas introduction nozzle 34, the gap t between the cover body 221 and the rotary table 2 is narrow, and the cover body 221. The gas and ions inside are difficult to be discharged to the outside. Therefore, the atmosphere inside the cover body 221 is slightly pressurized compared to the outside of the cover body 221.

  When the wafer W reaches the lower region of the first reactive gas nozzle 31 by the rotation of the turntable 2, the BTBAS gas is adsorbed on the surface of the wafer W, and then the wafer W is moved to the lower region of the second reactive gas nozzle 210. , The O3 gas and the BTBAS gas adsorbed on the surface of the wafer W react to form one or more molecular layers of the SiO2 film as a reaction product. Since the SiO2 film formed on the surface of the wafer W is formed in a very short time, it may be in an oxygen rich state than the ideal composition ratio (Si: O = 1: 2). .

  Next, when the wafer W reaches the lower region of the activated gas injector 220, a modification process of the SiO2 film formed on the wafer W is performed. Specifically, for example, Ar ions collide with the surface of the wafer W, oxygen elements are released from the SiO2 film, and the SiO2 film approaches an ideal composition ratio. Further, the elements in the SiO2 film are rearranged by the impact of the ions, and the SiO2 film is densified (densified). Therefore, this SiO2 film has improved resistance to wet etching, as shown in the examples described later. Further, for example, when an impurity such as an organic substance is contained in the SiO2 film, the impurity is vaporized and discharged from the SiO2 film by the impact of the Ar ions. At this time, since the wafer W is revolved by the rotation of the turntable 2, the peripheral speed on the outer peripheral side is faster than the rotation center side when viewed from the wafer W passing under the activated gas injector 220. The side may be strongly modified. However, as described above, the inclination adjusting mechanism 240 is fixed so that the sheath tubes 35a and 35b are inclined in the radial direction of the turntable 2 so that the rotation center side is higher (separated) than the outer peripheral side. For this reason, the wafer W is uniformly reformed along the length direction of the activated gas injector 220.

  Further, since the separation region D is not provided between the activated gas injector 220 and the second reactive gas nozzle 210 in the vacuum container 1, the activated gas injector 220 is drawn by the rotation of the rotary table 2. O3 gas and N2 gas flow from the upstream side toward However, as described above, since the cover body 221 is provided so as to cover the electrodes 36a and 36b and the gas introduction nozzle 34, the lower side of the cover body 221 (the gap between the airflow regulating surface 222 and the turntable 2). The region on the upper side of the cover body 221 is wider than t), and the gas flowing from the upstream side is less likely to enter the lower side of the cover body 221. Further, as described above, since the internal atmosphere of the cover body 221 is slightly pressurized atmosphere than the atmosphere outside the cover body 221, the gas flowing from the upstream side of the cover body 221 It is hard to get inside. Furthermore, since the gas flowing toward the activated gas injector 220 is drawn from the upstream side by the rotation of the turntable 2, the flow velocity increases as it goes from the radially inner periphery side to the outer periphery side of the turntable 2. However, since the width dimension u of the air flow regulating surface 222 on the outer peripheral side is larger than the inner peripheral side of the turntable 2, the gas to the inside of the cover body 221 extends in the length direction of the activated gas injector 220. Intrusion is suppressed. Therefore, the gas flowing from the upstream side toward the activated gas injector 220 flows to the exhaust port 62 on the downstream side through the upper region of the cover body 221 as shown in FIG. Therefore, these O3 gas and N2 gas are hardly affected by activation or the like due to high frequency, and the wafer W is hardly affected by these gases. The oxygen element discharged from the SiO2 film by the Ar ion bombardment is exhausted toward the exhaust port 62 together with Ar gas and N2 gas.

  Subsequently, when the wafer W passes through the separation region D on the downstream side of the activated gas injector 220 and passes through the lower region of the first reaction gas nozzle 31 and the second reaction gas nozzle 210, the oxygen rich state is similarly obtained. A SiO2 film is formed. At this time, as shown on the left side of FIG. 35, the upper layer (N + 1) side SiO 2 film is bonded to the lower layer (N) side SiO 2 film by the bonding of Si elements (Si—O—). Si) may not be strongly formed. For this reason, when the wafer W reaches the lower region of the activated gas injector 220, similarly, Ar elements discharge oxygen elements from the SiO2 film, and recombination (rearrangement) between the elements is performed. As shown on the right side of FIG. 35, this rearrangement proceeds over the upper and lower SiO2 film layers. That is, Si—O—Si bonds in the SiO 2 film are formed three-dimensionally. Thus, by rotating the turntable 2 a predetermined number of times, for example, 1000 times, the SiO2 film is formed (BTBAS gas adsorption and reaction between the BTBAS gas and O3 gas), the oxygen element is discharged by Ar ions, and the Si element. The rearrangement and the draining of impurities are repeated, and a thin film having a dense and strong bond in the film thickness direction and a low impurity concentration, for example, a film thickness of about 100 nm is formed.

  According to the above-described embodiment, since the plasma source is placed near the surface of the substrate (near the thin film), active species can be generated near the surface of the substrate, and thus ions and radicals having a short lifetime are concentrated at a high concentration. Can be supplied to the thin film. Then, the rotary table 2 is rotated to adsorb BTBAS gas on the wafer W, and then O3 gas is supplied to the surface of the wafer W to react the BTBAS gas adsorbed on the surface of the wafer W to form a SiO2 film. After forming the SiO 2 film, Ar ions are supplied to the SiO 2 film on the wafer W by the activated gas injector 220. For this reason, excess oxygen element in the SiO2 film is discharged, and rearrangement of elements occurs three-dimensionally, so that the SiO2 film can be densified. Moreover, since impurities are discharged from the SiO2 film by supplying Ar ions, a dense thin film having a low impurity concentration can be obtained. As shown in the examples described later, this thin film has improved wet etching resistance when immersed in a hydrofluoric acid aqueous solution, for example, compared to the SiO2 film before the modification treatment. In the device manufactured by the wafer W, the reliability can be improved. Furthermore, by using the activated gas injector 220, there is no fear of deactivation during ozone transport due to furnace temperature, compared to means for transporting ozone like remote plasma and generating O radicals by thermal decomposition. The degree of freedom of the set temperature of the wafer W is large, and the reforming process can be performed satisfactorily even at a low temperature, which is superior to the remote plasma in these respects.

Further, when the SiO2 film is modified by the activated gas injector 220, the distance between the sheath tubes 35a and 35b and the wafer W on the turntable 2 can be adjusted. The degree of reforming can be adjusted. Further, since the sheath tubes 35a and 35b can be inclined, the distance from the wafer W can be adjusted in the longitudinal direction of the sheath tubes 35a and 35b. The degree of can be made uniform.
Furthermore, since the reforming process is performed every time the film formation cycle is performed inside the vacuum vessel 1, so to speak, in the circumferential direction of the turntable 2, the wafer W is formed in the middle of the path through the processing regions P1 and P2. Since the modification process is performed so as not to interfere with the film process, for example, the modification process can be performed in a shorter time than the modification process after the thin film is formed. Furthermore, it is known that the above-described modification effect by Ar ions occurs only up to about 2 nm in the film thickness direction, for example, but by performing the modification treatment every time the film formation cycle is performed as described above, Thus, a thin film having a dense and low impurity concentration can be obtained in the thickness direction of the thin film. Further, since the cover body 221 is provided in the activated gas injector 220, the gas flowing from the upstream side can be prevented from entering the inside of the cover body 221, and the influence of this gas can be suppressed to form a film forming cycle. The reforming process can be performed during the process. Therefore, for example, it is not necessary to provide a dedicated separation region D between the second reactive gas nozzle 210 and the activated gas injector 220, so that the reforming process can be performed while suppressing the cost of the film forming apparatus.

  In addition, since the separation distance between the electrodes 36a and 36b is set narrow as described above, even in a high pressure range (pressure range for film formation) that is not optimal for gas ionization, reforming is performed with low output. Ar gas can be activated (ionized) to the extent necessary for the treatment. Note that, as the degree of vacuum in the vacuum container 1 is increased, Ar gas ionization proceeds more rapidly. On the other hand, for example, the adsorption efficiency of the BTBAS gas decreases, so the degree of vacuum in the vacuum container 1 is improved to the film formation efficiency. Set with quality efficiency in mind. In addition, the high-frequency power value supplied to the electrodes 36a and 36b is appropriately set as described above so that the film forming process is not adversely affected and the reforming process proceeds promptly.

In the above example, the reforming process is performed every time the film forming process is performed. However, the reforming process may be performed each time a plurality of film forming processes (cycles) are performed, for example, 20 times. In this case, when the reforming process is performed, specifically, the supply of BTBAS gas, O3 gas and N2 gas is stopped, and Ar gas is supplied from the gas introduction nozzle 34 to the activated gas injector 220, and the electrodes 36a, A high frequency is supplied to 36b. Then, the turntable 2 is rotated, for example, 200 times so that the five wafers W sequentially pass through the lower region of the activated gas injector 220. After the reforming process is performed in this manner, the supply of each gas is resumed to perform the film forming process, and the reforming process and the film forming process are repeated in order. Also in this example, a dense thin film with a low impurity concentration can be obtained as in the above example. In this case, since the supply of O3 gas or N2 gas is stopped when the reforming process is performed, the cover body 221 may not be provided as shown in FIG.
The activated gas injector 220 serves as an activating means for activating the process gas to reform the reaction product. As the activating means, the activated gas injector having the structure described above is used. Not limited. The activation means is made of, for example, ceramics, and an antenna for supplying a microwave, for example, a rod-shaped antenna is disposed in an injector in which a gas discharge port is formed along the length direction thereof. The inner gas may be activated and supplied onto the wafer W.

  Here, the phenomenon (reforming treatment) that occurs in the SiO2 film by the Ar gas activated as described above will not be described in detail, but the gas supplied from the gas introduction nozzle 34 is composed of Ar gas and O2 gas. From the results of experiments conducted by changing the ratio of gas and from experiments conducted by changing Ar gas to N2 gas, the elements in the SiO2 film are not replaced by oxygen radicals, but the oxygen elements in the SiO2 film It has been confirmed that this is a phenomenon in which Si—O recombination occurs due to desorption.

  The activated gas injector 220 is provided in a region between the separation region D on the upstream side of the first reactive gas nozzle 31 and the transport port 15, and the second reactive gas nozzle 210 in the rotation direction of the turntable 2 What is necessary is just to provide between the 1st reaction gas nozzles 31, for example, you may provide in the separation area | region D of the upstream of the 1st reaction gas nozzle 31. FIG. Further, as the configuration of the activated gas injector 220, for example, the gas introduction nozzle 34 may be provided on the upper side of the electrodes 36a and 36b, and the arrangement may be as shown in FIGS. In addition to the configuration in which the electrodes 36a and 36b are provided as the activated gas injector 220, a heater 30 may be provided as shown in FIG. In this case, the heating temperature of the heater 30 is adjusted to about 1000 ° C., for example.

Further, the activated gas injector 220 may be provided in the film forming apparatus shown in FIG. 1 together with the activated gas injector 32 (32a to 32d). In this case, the activated gas injector 220 is provided on the downstream side of the activated gas injector 32 (32a to 32d), and for example, impurities contained in the film with respect to the silicon nitride film formed on the wafer W The reforming process is performed so as to reduce the above. The activated gas injector 220 may also be provided when the SiO2 film is formed using the film forming apparatus shown in FIG. Further, even when the above-described gases are used as the first reaction gas and the second reaction gas, the reforming process is performed using the activated gas injector 220, so that the impurity concentration in the film is similarly increased. Reduction is performed.
As the activation gas supplied from the gas introduction nozzle 34, for example, He (helium) gas, NH3 (ammonia) gas, H2 (hydrogen) gas, or N (nitrogen) and O (oxygen) are used in addition to the Ar gas. Among the gases containing, at least one kind may be used.

In the above example, by performing the reforming process every time the film formation cycle is performed (every rotation of the turntable 2), a thin film having a good film quality that is dense and has a low impurity concentration over the film thickness direction of the silicon oxide film. As described above, a reactive gas more suitable than the BTBAS gas used as the first reactive gas in the above example when forming this silicon oxide film will be described below.
First, the ALD (MLD) process using BTBAS gas will be described again. First, as shown in FIG. 36 (a), for example, BTBAS gas is adsorbed on the wafer W in the first processing region P1, and then, as shown in FIG. 36 (b), O ₃ in the second processing region P2. The BTBAS gas on the wafer W is oxidized by the gas, and a reaction product containing oxygen and silicon in the BTBAS gas is generated on the wafer W as shown in FIG. 5C, and impurities such as organic substances are generated from the BTBAS gas. It desorbs as a by-product gas. Then, as shown in FIG. 4D, in the lower region of the activated gas injector 220, for example, excess oxygen element is released and element is regenerated with respect to the reaction product generated on the wafer W as described above. A modification process such as arraying is performed, and thus, the adsorption, oxidation, and modification of the BTBAS gas are repeated for each film formation cycle, whereby a silicon oxide film having a high density and a small amount of impurities is stacked in the film thickness direction. It will be.

By the way, a silicon oxide film having a high density and a small amount of impurities can be obtained by performing the above-described modification treatment. However, BTBAS has a low vapor pressure, and as shown in FIG. ) A large molecular structure in which atoms and t-butyl groups (—C (CH ₃ ) ₃ ) are bonded on both sides. In addition, it may not be a particularly advantageous gas in terms of the quality of the silicon oxide film. Therefore, diisopropylaminosilane gas can be cited as a reactive gas for forming a silicon oxide film that is more advantageous than BTBAS in terms of the above points.

  Diisopropylaminosilane has a higher vapor pressure than BTBAS and has a smaller molecule than BTBAS as can be seen from FIG. Since BTBAS has a low vapor pressure, it is difficult to obtain a high film formation rate because the gas flow rate cannot be increased while the processing pressure is increased. On the other hand, since the vapor pressure at 50 ° C. of diisopropylaminosilane is about 10 times that of BTBAS, for example, the gas flow rate can be increased or the processing pressure can be increased.

Further, as can be seen by comparing FIG. 37 (a) and FIG. 37 (b), since BTBAS has t-butyl groups bonded to both sides of Si—H, when gas is adsorbed on the wafer W, The t-butyl group tends to be sterically hindered. In contrast, diisopropylaminosilane has a small degree of such steric hindrance. Therefore, the bond between silicon and nitrogen is easier to break in diisopropylaminosilane than in BTBAS with respect to the attack of O ₃ gas. Also from such a point, it is possible to obtain a higher film formation rate when diisopropylaminosilane is used. In addition, since organic substances and nitrides are rapidly desorbed from the reaction gas and impurities in the film are reduced, good electrical characteristics can be obtained.

  In addition, since diisopropylaminosilane has a smaller molecule than BTBAS, it is arranged close to each other on the wafer W, so that the silicon oxide film becomes dense even before the modification treatment. Therefore, shrinkage (shrink) is reduced in the annealing process performed after the silicon oxide film is stacked (after the thin film is formed), so that pattern collapse due to the annealing process can be suppressed. Since diisopropylaminosilane has a small molecule, and can increase the gas flow rate and the processing pressure, the embedding property in the concave portion of the wafer W is good.

  Furthermore, with diisopropylaminosilane gas, the reaction gas is rapidly adsorbed onto the wafer W, so that the amount of reaction gas used can be reduced. Furthermore, since the in-plane uniformity of the wafer W can be adjusted by adjusting the flow rate of the reaction gas and the processing pressure, the range of adjustment of the flow rate of the reaction gas and the processing pressure can be expanded by using diisopropylaminosilane gas. The adjustment range of sex is also widened. Therefore, as described above, a thin film with a small amount of impurities is formed by performing plasma treatment (modification treatment) on a thin film formed using BTBAS gas. By performing the film formation process and then performing the plasma process, a thin film with better film quality can be quickly obtained than in the case of performing the film formation process and the plasma process using the BTBAS gas.

When performing the film forming process using this reaction gas, for example, the rotation speed of the turntable 2, the processing pressure, the heating temperature of the wafer W, the flow rate of the reaction gas, the flow rate of O ₃ gas, the gas for reforming (Ar The flow rate of gas / O ₂ gas and the flow rate of N ₂ gas from the separation gas nozzles 41 and 42 are set to 240 rpm, 2.13 kPa (16 Torr), 350 to 500 ° C., 275 sccm, 4500/500 sccm, 10,000 sccm, and 10,000 sccm, respectively. The
Even in the case of using diisopropylaminosilane gas, the reforming gas is, for example, Ar gas, He (helium) gas, NH3 (ammonia) gas, H2 (hydrogen) gas, or N (nitrogen) as in the case of BTBAS gas. Among gases containing O (oxygen), at least one kind may be used. In addition, it is preferable to perform the reforming process for each film forming cycle. However, the reforming process may be performed each time the film forming process (cycle) is performed a plurality of times, for example, 20 times as in the case of using the BTBAS gas. .
In the example described above, the upper part of the rotary table 2 such as the gas supply system and the ceiling in the separation region is rotated around the vertical axis. However, these upper parts rotate around the vertical axis with respect to the rotary table 2. It is good also as composition to do. That is, any configuration may be used as long as the gas supply system and the rotary table 2 rotate relatively. In the case of such a specific device configuration, for example, a sleeve that is rotatable around the vertical axis is inserted into the central portion of the vacuum vessel 1 from the upper side, and a ceiling portion, a gas supply pipe, an activation member are inserted into the rotating sleeve. Install the injector. Then, each gas supply pipe is inserted into the rotating sleeve and raised upward, and the height position of the base end side (upper end side) of each gas supply pipe is configured to be different between the gas supply pipes. An end side gas inlet is opened on the side peripheral surface of the rotating sleeve. Furthermore, a fixed sleeve is arranged so as to be concentric outside the rotary sleeve, and a set of a bearing and a magnetic seal is provided between the fixed sleeve and the rotary sleeve. Each gas supply path is connected from the outside of the fixed sleeve at a height position corresponding to the height position of each gas inlet. Accordingly, each gas supply path communicates with a corresponding gas intake on the rotary sleeve side. Then, by forming the communication space over the entire circumference and separating the communication spaces for the respective gases arranged in the vertical direction by, for example, the above-described combination of the bearing and the magnetic seal, the gas supply in the rotating three portion is supplied. Gas can be supplied to the tube from the outside.

(simulation)
A simulation model is created for the activated gas injector 32 according to the first embodiment and the activated gas injector 32c in which the partition wall 324 is not provided and the gas introduction / activation chamber 327 is shared. Then, a simulation was made on the gas flow in each injector body 321. The type of gas was NH ₃ gas, the gas flow rate was 3,000 sccm, the pressure in the vacuum vessel 1 was 1.33 kPa (10 torr), and the gas temperature was 273 K.
A. Simulation conditions
Example 1
About the activated gas injector 32 which concerns on 1st Embodiment, the flow of the gas in the injector main body 321 was simulated.
(Comparative Example 1)
Except that the partition wall 324 is not provided, the gas flow in the injector main body 321 was simulated for the activated gas injector 32c having the same configuration as in (Example 1).

B. simulation result
The result of (Example 1) is shown in FIG. 38 (a), and the result of (Comparative example 1) is shown in FIG. 38 (b). In these drawings, the distribution of the gas flow velocity in the injector main body 321 is partitioned and displayed by constant velocity lines. The numerical value shown in each figure has shown the flow velocity range of the gas flow velocity [m / s] in the said division.

According to the result of (Example 1), a region having a high flow velocity is formed in the plasma generation part 351 between the sheath tubes 35a and 35b, and a partition wall 324 is provided and an NH ₃ gas is provided above the gas activation chamber 323. It can be seen that the NH ₃ gas can be efficiently passed through the plasma generator 351 by supplying.

On the other hand, according to the result of (Comparative Example 1), a region having a high flow velocity is formed in the space formed between the right sheath tube 35b and the injector main body 321, and the NH ₃ gas is supplied to the plasma generation unit. Bypassing 351 and passing through the space to the gas discharge hole 33, there is a high possibility that the NH ₃ gas can hardly be converted into plasma.
From these results, in the activated gas injector 32 of the type shown in the first embodiment in which the electrodes 36a and 36b are arranged in the two sheath tubes 35a and 35b to generate plasma, the partition wall 324 is provided. Thus, it can be said that the NH ₃ gas can be efficiently converted into plasma by making it difficult to form the bypass flow path.

(Experiment)
A processing gas was supplied to a rotary table type film forming apparatus using an activated gas injector 32d according to the fourth embodiment using the heater 30, and a film forming experiment by the ALD method was performed. A silicon oxide film was formed using BTBAS gas and O ₃ gas as the processing gas, and an activated gas injector 32 d equipped with a heater 30 was used for supplying the O ₃ gas. The process pressure was 1067 Pa (8 Torr), the heating temperature of the wafer W was 100 ° C., the rotation speed of the turntable 2 was 120 rpm, the BTBAS gas supply rate was 100 sccm, and the O ₃ gas supply rate was 10,000 sccm. Further, five wafers W were placed on the turntable 2, and the film formation time was 31 minutes.
A. Experimental conditions
(Example 2-1)
The output of the heater 30 was adjusted so that the temperature detected by the temperature detection end 305 was 300 ° C.
(Example 2-2)
The output of the heater 30 was adjusted so that the detected temperature of the temperature detection end 305 was 400 ° C.
(Example 2-3)
The output of the heater 30 was adjusted so that the detected temperature of the temperature detection end 305 was 500 ° C.
(Example 2-4)
The output of the heater 30 was adjusted so that the temperature detected by the temperature detection end 305 was 600 ° C.
(Comparative Example 2)
Film formation was performed without heating with a heater.

B. Experimental result
The results of each example and comparative example are shown in (Table 1). Here, the in-plane uniformity [%] (thickness uniformity in the wafer W plane) in (Table 1) is measured by measuring the maximum film thickness and the minimum film thickness [nm] in each wafer W plane as follows ( The average value of the in-plane uniformity of the five wafers W is described by applying the formula 1). Further, the inter-surface uniformity [%] (uniformity of the average film thickness between the wafers W) is obtained by calculating the average film thickness of the five wafers W, and setting the maximum film thickness and the minimum film thickness [nm] of these average film thicknesses. Calculation was performed by applying the equation (1).

± ((maximum film thickness) − (minimum film thickness)) × 100
/ ((Maximum film thickness) + (minimum film thickness)) (1)

(Table 1)

When the experimental results of (Example 2-1) to (Example 2-3) and (Comparative Example 2) shown in Table 1 are compared, each example using the heater 30 is a comparative example. The film formation rate per unit time [nm / min] and the film formation rate per cycle [nm / cycle] were increased. Further, even when comparing the respective examples, the higher the temperature of the heater 30 (the higher the output of the heater 30), the higher the film forming speed. This is because as the temperature of the heater 30 is increased, the amount of energy absorbed by the O ₃ gas in the activated gas injector 32d increases, and as a result, in the gas supplied from the activated gas injector 32d to the surface of the wafer W. It is considered that the film formation rate could be improved by increasing the concentration of active species such as oxygen radicals.

  Next, the uniformity of the formed film will be described. In-plane uniformity and inter-plane uniformity shown in (Table 1), the smaller the numbers shown in the table, the more within the wafer W plane or the wafer. It shows that the film thickness uniformity between the W surfaces is high. In this regard, first, the measurement results of in-plane uniformity are considered. In each example of (Examples 2-1 to 2-3) excluding (Example 2-4), the uniformity is higher than in (Comparative Example 2). High film formation was possible. Moreover, when the state of the in-plane uniformity with respect to the temperature of the heater 30 is observed for each example, it can be seen that the in-plane uniformity decreases as the temperature of the heater 30 is increased.

As described above, the reason why the in-plane uniformity is improved when the heater 30 is used and the once-improved in-plane uniformity tends to gradually decrease as the temperature is increased will be inferred below. That is, in the case where the heater 30 is not used (Comparative Example 2), the reaction between BTBAS and O ₃ gas proceeds only by the energy for heating the wafer W, so that the reaction rate is relatively slow. The film tends to become thicker at the center side of the slow-rotating rotary table 2 and gradually becomes thinner toward the outer peripheral side of the fast-rotating rotary table 2. On the other hand, in Example 2-1 using the heater 30, the active species are directly supplied to the surface of the wafer W, so that the reaction rate increases, and the influence of the rotation speed of the wafer W on the film formation speed And the in-plane uniformity of the formed film is improved. However, even in this case, there is an area where the rotation of the wafer W with respect to the film formation speed is dominant on the outermost periphery of the turntable 2 that is fast rotating. It can be considered that the film deposition rate hardly increases even when the film is supplied.

  For this reason, when the temperature of the heater 30 is increased as in (Examples 2-2 to 2-4), a region where the supply of active species is dominant with respect to the film formation rate, that is, a rotary table. In the region inside 2, the amount of active species supplied to the surface of the wafer W increases, and as a result, the film formation rate increases and the film becomes thick. On the other hand, in the region where the rotation of the wafer W is dominant with respect to the film formation speed, that is, the outermost peripheral region of the turntable 2, the film formation is performed even if the amount of active species supplied to the surface of the wafer W increases. The speed hardly changes, and the thickness of the film remains at the same level as (Example 2-1), for example. As a result, the film thickness difference between the inner area of the turntable 2 where the film becomes thicker and the outermost peripheral area where the film thickness hardly changes is increased, and a decrease in uniformity is observed. Conceivable. However, even if the in-plane uniformity of the formed film is reduced, the degree of reduction of the in-plane uniformity obtained in (Example 2-4) is sufficiently within the practical range, It can be said that the effect of improving the film formation rate by using the heater 30 is larger. It should be noted that the absolute value of the in-plane uniformity in each of the examples and comparative examples shown in Table 1 is a relatively large value of the 30% range. This is because of When the adjustment of the apparatus is completed, the absolute value of the in-plane uniformity converges to a practical value, but the tendency of the in-plane uniformity with and without the heater 30 is (Table 1). The same tendency as the result shown in is obtained.

  On the other hand, as shown in (Table 1), a better value than that of (Comparative Example 2) was obtained in any of the examples. When the results of (Examples 2-1 to 2-4) are compared, the uniformity between surfaces slightly decreases from (Example 2-1) to (Example 2-2), and then (Example 2). As the temperature of the heater 30 was increased from -2 to 2-4), the inter-surface uniformity was improved.

  In this respect, it is not clear why the inter-surface uniformity decreases when the temperature of the heater 30 is changed from 300 ° C. to 400 ° C., but the inter-surface uniformity by increasing the temperature to 500 ° C. and 600 ° C. Regarding the improvement, the following reasons can be inferred. That is, in the region inside the turntable 2 with a slow rotation, a sufficient reaction time can be obtained, so that most of the BTBAS adsorbed on the wafer W becomes a silicon oxide film and becomes a saturated state where the film does not become thicker. It is considered that the film thickness at no longer changes.

On the other hand, in the region where the film thickness is not saturated, the thickness of the film to be formed depends on the flow state of the gas containing the active species supplied onto the surface of the wafer W and the BTBAS adsorbed on the surface of the wafer W. It is considered that the thickness of the film formed in the region varies among the wafer W surfaces due to subtle differences such as the contact state between the active species and the active species. For this reason, when the temperature of the heater 30 is increased and the concentration of the active species supplied to the surface of the wafer W is increased, the ratio of the area of the region where the film thickness is saturated increases while the saturation state in which the film thickness easily varies. It is considered that the ratio of the area of the non-formed region is reduced, and the film thickness uniformity between the wafer W surfaces as a whole can be improved.
From the above, the activated gas injector 32d provided with the heater 30 as a means for activating the processing gas contributes to the improvement of the uniformity of the film formed in the wafer W surface and between the surfaces, It was confirmed that there was an effect of improving the film forming speed.

(Example 3-1)
Next, a simulation performed for verifying the gas flow in the vacuum vessel 1 when the activated gas injector 220 is used will be described. In this simulation, it was confirmed how Ar gas discharged from the gas introduction nozzle 34 flows through the vacuum vessel 1 depending on the presence or absence of the cover body 221 described above. The following conditions were used as simulation conditions.
(Simulation conditions)
Pressure (Pa (Torr)): 400 (2)
Number of rotations of the rotary table 2 (rpm): 240
First reaction gas: O2 gas (10 slm)
Second reaction gas: O3 gas (10 slm)
Activation (reforming) gas: Ar gas (2 slm)
Gas supplied to center region C: N2 gas (15 slm)
Gas supplied to each separation region D: N2 gas (3 slm)
Gas supplied below the rotary table 2: N2 gas (10 slm)

(simulation result)
The results obtained by this simulation are shown in FIG. 39 (a) and 39 (b) are plan views showing the concentration distribution of Ar gas (activation gas) in the vicinity of the activation gas injector 220 from the upper side of the turntable 2, and FIG. ), (D) are perspective views showing the concentration distribution of N2 gas (separated gas) in the vicinity of the gas introduction nozzle 34. FIGS. 9A and 9C show the case where the cover body 221 is provided, and FIGS. 9B and 9D show the case where the cover body 221 is not provided. From this result, it can be seen that the flow of Ar gas is regulated by providing the cover body 221, and the Ar gas maintains a high concentration inside the activated gas injector 220. On the other hand, when the cover body 221 is not provided, it can be seen that the Ar gas has diffused widely toward the downstream side of the activated gas injector 220. Also, in the vicinity of the gas introduction nozzle 34, the concentration of the N2 gas is extremely low by providing the cover body 221, so that the inflow of N2 gas from the outside of the activated gas injector 220 is suppressed. When the cover body 221 is not provided, it can be seen that N 2 gas has entered the activated gas injector 220.

(Example 3-2)
The simulation was similarly performed by changing the flow rate of the activation gas to 5 slm under the simulation conditions of Example 3-1.
As a result, as shown in FIG. 40, it was found that by providing the cover body 221, the Ar gas concentration in the vicinity of the activated gas injector 220 is increased, and the inflow of N2 gas is suppressed. From the results of the above Examples 3-1 and 3-2, it is said that the flow rate of the activation gas is small enough to be about 2 slm in order to suppress the inflow of the gas from the outside into the activated gas injector 220. I understood that.

Example 4
Next, how the film quality of the SiO2 film is changed by the modification process, and the degree of the modification process by adjusting the distance y between the sheath tubes 35a and 35b and the wafer W shown in FIG. An experiment was conducted to see if it changed.
In the experiment, an experimental piece having a SiO2 film formed on the surface is prepared, and the experimental piece is installed at a lower position in the center in the length direction of the sheath tubes 35a and 35b, and the modification treatment is performed under the following conditions. went. Thereafter, these pieces were immersed in a hydrofluoric acid aqueous solution, and the wet etching rate of the SiO2 film was measured.
(Experimental conditions)
Temperature: Room temperature Pressure (Pa (Torr)): 240 (1.8)
High frequency output (W): 200
Gas for activation: Ar (300 sccm)
Processing time: 5 minutes Distance y (mm) between the sheath tubes 35a, 35b and the surface of the experimental piece: 6, 9, 12

(Experimental result)
The result is shown in FIG. As a result, it was found that the etching rate was lowered by performing the reforming process as compared with the case where the reforming process was not performed, and thus the SiO2 film was densified. In addition, as the distance y between the experimental piece and the sheath tubes 35a and 35b becomes narrower, the etching rate further decreases, and the reforming process further progresses to make the SiO2 film dense. I understood. In addition, it was found from the change in the etching rate in the film thickness direction that the SiO2 film was densified closer to the surface layer of the piece. Therefore, since this modification process occurs in a region close to the surface layer of the SiO2 film, it was found that a dense film can be obtained in the film thickness direction by performing the film formation process as described above. . FIG. 42 also shows the etching rate of the thermal oxide film obtained by performing the heat treatment at 950 ° C. In the present invention, the etching rate increases as the distance y decreases. It has been found that a dense film can be obtained approaching the characteristics of this thermal oxide film.

(Example 5)
Next, an experiment conducted using diisopropylaminosilane gas as a reaction gas for forming the above-described silicon oxide film will be described. In this experiment, the film forming apparatus shown in FIGS. 28 to 34 was used, and the reforming process was performed every time the film forming cycle was performed (every rotation of the turntable 2) under the film forming conditions shown in Table 2 below. Then, a silicon oxide film was formed, and the film formation rate (deposition) at that time was calculated. As a comparative example, an example in which a film is formed using a diisopropylaminosilane gas and the BTBAS gas described above without performing a modification treatment will be described. In the experiment, a wafer W having a diameter of 300 mm was used. The same applies to each of the following embodiments.

(Table 2)

In Table 2, as “high frequency power”, the power for reforming supplied to the electrodes 36a and 36b is shown. In any experiment, when diisopropylaminosilane gas is used, the flow rate of this diisopropylaminosilane gas is 275 sccm, the concentration and flow rate of O ₃ gas are 300 g / Nm ³ and 10 slm, respectively, and the reforming gas (Ar gas / The flow rate of O ₂ gas) was 5 slm / 0.1 slm. In addition, said comparative example 5-1 is experiment conducted on the conditions (flow rate of BTBAS gas: 200 sccm) in which the film-forming speed | rate becomes the highest when BTBAS gas is used.

  As a result of this experiment, as shown in FIG. 43, it was found that by using diisopropylaminosilane gas, the film forming speed was improved under the same film forming conditions as compared with the case of using BTBAS gas. Further, it was found that when diisopropylaminosilane gas is used, both the gas flow rate and the processing pressure can be increased from about the upper limit value of the BTBAS gas, and the film forming rate is increased according to the increase. Further, when the film forming temperature and the processing pressure are set to 350 ° C. and 1.07 kPa (8 Torr) using diisopropylaminosilane gas, when the rotation speed of the turntable 2 is 240 rpm, the high-frequency power for reforming is large. However, when the rotation speed of the turntable 2 is 30 rpm, the film formation speed becomes slower as the reforming high-frequency power is increased, and the maximum (0 W) is not observed. → 400W), a decrease of about 25.6% was confirmed.

  From this, by slowing down the rotation speed of the turntable 2, the time during which the wafer W undergoes the reforming process (the residence time in the region below the activated gas injector 220) becomes longer. It turned out that the effect becomes obvious. Further, it has been found that the reforming treatment causes a decrease in film formation speed, that is, shrinkage (densification) of the silicon oxide film. At this time, the higher the film formation temperature and the lower the processing pressure, the greater the amount of shrinkage of the silicon oxide film. From the above results, it can be seen that the degree of modification is enhanced by increasing the residence time of the wafer W in the lower region of the activation gas injector 220 and increasing the amount of ions generated and the reactivity generated from the activation gas. It was.

(Example 6)
Next, in the same manner as in Example 5, the silicon oxide film formed under the film formation conditions shown in Table 3 below was immersed in a 1 wt% dilute aqueous acid solution to obtain a wet etching rate.
(Table 3)

The results of this experiment are shown in FIG. As Reference Examples 6-1 and 6-2, a CVD method using a thermal oxide film obtained at a processing temperature of 950 ° C. and dichlorosilane gas and High Temp. Oxide (N ₂ O) at 780 ° C., respectively. The result about the silicon oxide film formed by is shown. Further, in FIG. 44, values obtained by normalizing each result with the value obtained for the thermal oxide film of Reference Example 6-1 being 1 are shown.
As a result, the film formation process is performed using diisopropylaminosilane gas, and then the modification process is performed to improve the resistance to wet etching rate. Depending on the film formation conditions, the result is very close to a thermal oxide film with ideal characteristics. Was found to be obtained. In addition, when a silicon oxide film is formed using the above-described BTBAS gas and the modification process is not performed by a separate experiment, the resistance to wet etching rate within 5 times that of the thermal oxide film is obtained. It is known that energy equivalent to a heat treatment of about 800 ° C. or higher is necessary to have a high temperature, and therefore, a method of performing a modification process for each film formation cycle using diisopropylaminosilane gas is extremely effective. I can say that.
At this time, the residence time of the wafer W in the region below the activation gas injector 220 is lengthened and generated from the activation gas, similarly to the result obtained for the film formation rate (shrinkage amount) in Example 5 described above. It has been found that the resistance to the wet etching rate is improved by adjusting the processing conditions so as to increase the amount of ions generated and the reactivity.

  On the other hand, in the case where no modification treatment is performed, the use of diisopropylaminosilane gas causes the wet etching rate to be slightly higher than the result using BTBAS gas. This is because silicon is formed using BTBAS gas. This is probably because the oxide film contains nitrogen as an impurity and thus has higher wet etching resistance than a silicon oxide film having an ideal composition. That is, when diisopropylaminosilane gas is used, it can be said that the nitrogen concentration in the film is reduced even before the reforming treatment, compared with the case where BTBAS gas is used.

(Example 7)
Subsequently, after forming a silicon oxide film using diisopropylaminosilane gas in the same manner as in Example 5, annealing is performed at 850 ° C. in a nitrogen atmosphere, and how much the film thickness of the silicon oxide film shrinks. An experiment to confirm was conducted. About the film-forming conditions of each of Examples 7-1 to 7-6 and Comparative Examples 7-1 to 7-7, the same conditions as in Examples 6-1 to 6-6 and Comparative Examples 6-1 to 6-7, respectively. The film was formed. As Reference Example 7-1, the results are also shown for a silicon oxide film formed by the above-described CVD method.

  As a result, as shown in FIG. 45, the silicon oxide film subjected to the film formation process and the modification process using diisopropylaminosilane gas is contracted by the annealing process as compared with the silicon oxide film not subjected to the modification process. The rate was getting smaller. At this time, the silicon oxide film formed under the conditions of the processing pressure, the rotational speed of the turntable 2 and the film forming temperature of 0.5 kPa (4 Torr), 20 rpm and 350 ° C. did not shrink even by the annealing process. For this reason, it was found that a dense thin film can be formed by performing the modification treatment, and that pattern collapse during the annealing treatment can be suppressed. Also in the shrinkage rate obtained in Example 7, the same tendency as the results of Examples 5 and 6 was observed with respect to the film forming temperature, the number of rotations of the turntable 2, and the processing pressure. In addition, when a film was formed using BTBAS gas and the modification treatment was not performed by a separate experiment, the film was formed at a film forming temperature of 500 ° C. or higher in order to make the shrinkage rate within 5%. Since it was necessary, it was found that a dense thin film can be obtained at a low temperature by using diisopropylaminosilane gas and performing a modification treatment.

この結果、図４６に示すように、改質処理を行うことによってシリコン酸化膜中の水分が減少し、更に回転テーブル２の回転数を遅くすることによって一層低くなっていた。 (Example 8)
As in Example 5, with respect to the silicon oxide film formed or modified using diisopropylaminosilane gas, moisture (Si—OH and OH group (H ₂ O)) contained in the film after the film formation was changed. An experiment to confirm was conducted. The film formation conditions are as shown in Table 4 below, the processing pressure was 1.07 kPa (8 Torr), and the film formation temperature was 350 ° C. In addition, FT-IR (Fourier transform infrared spectroscopy) was used for the measurement of the water | moisture content in a silicon oxide film.
(Table 4)

As a result, as shown in FIG. 46, the moisture in the silicon oxide film is reduced by performing the reforming process, and is further lowered by slowing the rotational speed of the turntable 2.

その結果、図４７に示すように、改質処理によりシリコン酸化膜中の水分が減少しており、また処理圧力が低くなる程膜中の水分が減少していた。 Example 9
Next, the rotation speed of the turntable 2 is fixed at 30 rpm, and the high frequency power and the processing pressure are adjusted as shown in Table 5 below, and the silicon oxide film is formed using diisopropylaminosilane gas at a film forming temperature of 350 ° C. A film was formed and the same experiment as in Example 8 was performed.
(Table 5)

As a result, as shown in FIG. 47, the moisture in the silicon oxide film was reduced by the modification treatment, and the moisture in the film was reduced as the processing pressure was lowered.

(Example 10)
The rotation speed of the turntable 2 is fixed at 30 rpm, and a silicon oxide film formed using diisopropylaminosilane gas under the film forming conditions shown in Table 6 below is subjected to an annealing process (annealing temperature: 850 ° C., annealed) after the film forming process. Time: 10 minutes), and the moisture content in the film was measured in the same manner as in Examples 8 and 9 described above.
(Table 6)

  As a result, as shown in FIG. 48, the moisture in the film was below the detection lower limit by performing the annealing process after the reforming process. On the other hand, the moisture in the film was reduced by the annealing process even when the reforming process was not performed, but the amount of the decrease was more than that when the annealing process was performed on the silicon oxide film that had undergone the reforming process. It was small. Therefore, it was found that by performing the modification treatment, the moisture in the film easily escapes by the subsequent annealing treatment.

(Example 11)
Next, with respect to the silicon oxide film subjected to the film formation process and the modification process under the same film formation conditions as in Example 9 by using diisopropylaminosilane gas, hydrogen and oxygen with respect to the specific gravity of the silicon oxide film and the amount of silicon in the film The proportion of each amount was measured by RBS / HFS (Rutherford backscattering method / hydrogen forward scattering method).
As shown in FIG. 49, as in Examples 8 to 10, it was found that the amount of hydrogen and oxygen in the film was reduced and the specific gravity was increased by the reforming treatment. In addition, when the processing pressure is lowered, the effect of the reforming process is increased. In Comparative Example 1-1, since desorption of hydrogen from the silicon oxide film was confirmed during the measurement, it is considered that more hydrogen was actually contained than the measurement result.

その結果、図５０に示すように、改質処理を行うことにより膜中の水素及び窒素の含有量が低下していた。 (Example 12)
With respect to a silicon oxide film formed using diisopropylaminosilane gas under the conditions shown in Table 7 below, the concentration of impurities was measured over a depth of 50 nm in the film thickness direction using SIMS (secondary ion mass spectrometry). . The film forming temperature was 350 ° C., and the rotation speed of the turntable 2 was 30 rpm.
(Table 7)

As a result, as shown in FIG. 50, the content of hydrogen and nitrogen in the film was reduced by performing the reforming treatment.

この実験の結果、図５１に示すように、改質処理とアニール処理とを行うことによって、シリコン酸化膜中の水素の量が減少することが分かった。 (Example 13)
The same experiment as in the above Example 12 was performed on the silicon oxide film formed under the film forming conditions shown in Table 8 below. The film forming temperature was 350 ° C., the processing pressure was 0.5 kPa (4 Torr), the rotation speed of the turntable 2 was 30 rpm, and the annealing treatment was 850 ° C. for 10 minutes.
(Table 8)

As a result of this experiment, as shown in FIG. 51, it was found that the amount of hydrogen in the silicon oxide film is reduced by performing the reforming process and the annealing process.

これらの結果について、得られたＳＥＭ（Scanning Electron Microscope）画像を読み取って模式的に図５２に示すと、改質処理を行うことにより、更に回転テーブル２の回転数を遅くすることにより、凹部から薄膜が埋め込まれていき、自己選択的な埋め込み特性が得られることが分かった。 (Example 14)
Next, a pattern (opening depth: 10 μm, opening width: 0.3 μm) including a recess (opening) with an extremely large aspect ratio (= 30) is formed on the surface of the wafer W, and diisopropyl is formed on the wafer W. An experiment was conducted to confirm the embedding properties of the thin film with aminosilane gas. And about the film thickness of the thin film formed on the wafer W, the ratio (film thickness ratio: R = film thickness of the side wall surface) of the side wall surface of the recess to the film thickness of the portion other than the recess on the surface of the wafer W ÷ Thickness of the part other than the concave part) was calculated and used as an index for evaluating the embedding property in the concave part. The experimental conditions at this time are shown in Table 9 below. The film forming temperature was 350 ° C., the processing pressure was 0.5 kPa (4 Torr), the flow rate of diisopropylaminosilane gas was 275 sccm, and the concentration and flow rate of O ₃ gas were 300 g / Nm ³ and 10,000 sccm, respectively.
(Table 9)

Regarding these results, the obtained SEM (Scanning Electron Microscope) image is read and schematically shown in FIG. 52. By performing the reforming process, the rotational speed of the turntable 2 is further reduced, so that It was found that self-selective embedding characteristics can be obtained as the thin film is embedded.

図５３に示すように、改質処理によりリーク電流が小さくなり、また成膜温度が高い程リーク電流が減少していた。 (Example 15)
Subsequently, a silicon oxide film was formed with diisopropylaminosilane gas under the conditions shown in Table 10 below, and an experiment was conducted to check how much the leakage current would be. In the experiment, a negative bias voltage was applied to the silicon oxide film using a mercury probe method, and the current density that passed through the silicon oxide film was measured. Therefore, it can be said that the smaller the current density, the smaller the leakage current. The processing pressure is 1.07 kPa (8 Torr), the flow rate of diisopropylaminosilane gas is 275 sccm, the concentration and flow rate of O ₃ gas are 300 g / Nm ³ and 10000 sccm, respectively, and the flow rate of reforming gas (Ar / O ₂ ). Was formed at 5 slm / 0.1 slcm, and the rotation speed of the turntable 2 was 240 rpm.
(Table 10)

As shown in FIG. 53, the leakage current was reduced by the reforming process, and the leakage current decreased as the film formation temperature increased.

その結果、図５４に示すように、改質処理用の高周波電力を高くする程リーク電流が減少していた。 (Example 16)
With respect to the silicon oxide film formed under the conditions shown in Table 11, the same experiment as in Example 15 was performed. The film formation temperature was 350 ° C., the rotation speed of the turntable 2 was 30 rpm, and film formation was performed under the same conditions as in Example 15 except for the other conditions.
(Table 11)

As a result, as shown in FIG. 54, the leak current decreased as the high frequency power for reforming treatment was increased.

その結果、図５５に示すように、回転テーブル２の回転数が遅くなる程、リーク電流が減少していた。 (Example 17)
As in Examples 15 and 16, the leakage current was measured for the silicon oxide film formed under the conditions shown in Table 12 below. A film was formed under the same conditions as in Example 16 except that the high-frequency power was 400 W.
(Table 12)

As a result, as shown in FIG. 55, the leak current decreased as the rotational speed of the turntable 2 became slower.

その結果、図５６に示すように、処理圧力が低いほどリーク電流が減少していた。尚、１．０７ｋＰａ（８Ｔｏｒｒ）で成膜したシリコン酸化膜について得られた特性は、既述のＢＴＢＡＳガスを用いて３５０℃の成膜温度で成膜し、その後８５０℃のアニール処理を行ったシリコン酸化膜と同程度の値を示していた。従って、ジイソプロピルアミノシランガスを用いると共に改質処理を行うことにより、ＢＴＢＡＳガスを用いた場合よりも良好なリーク電流が低い成膜温度で得られることが分かった。
図示や詳細の説明については省略するが、別途行った実験により、ジイソプロピルアミノシランガスを用いることによって、サイクルレート（回転テーブル２の回転毎に成膜されるシリコン酸化膜の膜厚）及びウェハＷ内のシリコン酸化膜の面内均一性のいずれについても、ＢＴＢＡＳガスを用いるよりも向上することが分かった。サイクルレートについては、バッチ式の反応炉を用いた実験の結果、ジイソプロピルアミノシランガスではＢＴＢＡＳガスの１．３４倍となっていた。また、ジイソプロピルアミノシランガスでは、成膜温度を３５０℃〜５００℃の間で変化させても成膜速度がほとんど変わらないことが確認されたため、ジイソプロピルアミノシランガスはこの温度範囲では安定で熱分解が抑えられて、ＡＬＤ法による良好な成膜が行われることが分かった。従って、例えばＯ_３ガスにより酸化される前におけるジイソプロピルアミノシランガスの熱分解が抑えられることが分かった。 (Example 18)
Similarly to the above Examples 15 to 17, the leakage current was measured for the silicon oxide film formed under the conditions shown in Table 13 below. A film was formed under the same conditions as in Example 17 except that the number of rotations of the turntable 2 was 30 rpm.
(Table 13)

As a result, as shown in FIG. 56, the leakage current decreased as the processing pressure decreased. The characteristic obtained for the silicon oxide film formed at 1.07 kPa (8 Torr) is that the film was formed at a film forming temperature of 350 ° C. using the BTBAS gas described above, and then annealed at 850 ° C. The value was similar to that of the silicon oxide film. Therefore, it was found that by using the modification treatment with the diisopropylaminosilane gas, a better leakage current can be obtained at a lower film formation temperature than when the BTBAS gas is used.
Although illustration and detailed explanation are omitted, by using diisopropylaminosilane gas in a separate experiment, the cycle rate (the thickness of the silicon oxide film formed for each rotation of the turntable 2) and the inside of the wafer W are determined. It was found that both in-plane uniformity of the silicon oxide film was improved as compared with the use of BTBAS gas. As a result of experiments using a batch reactor, the cycle rate was 1.34 times that of BTBAS gas for diisopropylaminosilane gas. In addition, with diisopropylaminosilane gas, it was confirmed that the film formation rate hardly changed even when the film formation temperature was changed between 350 ° C and 500 ° C. As a result, it was found that good film formation by the ALD method was performed. Therefore, for example, it was found that thermal decomposition of diisopropylaminosilane gas before being oxidized by O ₃ gas can be suppressed.

W wafer 1 vacuum container 2 rotary table 4 convex part 30 heater 31 first reaction gas nozzles 32, 32a to 32d
Activated gas injector 322 Gas introduction chamber, gas introduction flow path 323 Gas activation chamber, gas activation flow path 33 Gas discharge hole 34 Gas introduction nozzles 35a, 35b
Sheath tube 36a, 36b
Electrode 41, 42 Separation gas nozzle

Claims (11)

In a film forming apparatus for forming a thin film by laminating a plurality of reaction product layers by sequentially supplying at least two kinds of processing gases that react with each other in a vacuum vessel to the surface of a substrate and executing this supply cycle ,
A rotary table provided in the vacuum vessel;
A substrate placement area provided for placing the substrate on the turntable;
A first reaction gas supply unit that is provided apart from each other in the rotation direction of the turntable and supplies a first process gas and a second process gas to the surface of the substrate on the substrate mounting area side, respectively. And a second reactive gas supply unit;
In order to separate the atmosphere of the first processing region to which the first processing gas is supplied and the second processing region to which the second processing gas is supplied, it is located between these processing regions in the rotation direction. A separation region;
In order to separate the atmospheres of the first processing region and the second processing region, a discharge hole for discharging a separation gas is formed on the substrate mounting surface side of the rotary table, which is located in the center of the vacuum vessel. A central area;
An exhaust port provided in the vacuum container for exhausting the inside of the vacuum container,
The separation region includes a separation gas supply unit for supplying a separation gas, and a narrow space for the separation gas supplied from the separation gas supply unit to flow from the separation region to the processing region along the rotation direction. A ceiling surface for forming between the rotary table and
The ceiling surface is configured so that a width along the rotation direction is widened toward an outer edge of the vacuum vessel,
The height dimension from the turntable to the ceiling surface is set smaller than each height dimension of the first processing area and the second processing area,
At least one of the first reactive gas supply unit and the second reactive gas supply unit is
A flow path forming member partitioned into a gas activation flow path and a gas introduction flow path by a partition;
A gas introduction port for introducing a processing gas into the gas introduction flow path;
A pair of electrodes provided so as to extend in parallel with each other along the partition wall in the gas activation channel, and to which power for activating the processing gas is applied;
A communication hole provided in the partition wall along the length direction of the electrode, for supplying a processing gas in the gas introduction channel to the gas activation channel;
An activated gas comprising: a gas discharge port provided along the length direction of the electrode in the gas activation channel for discharging the gas activated in the gas activation channel Configured as an injector ,
The communication hole is formed above the height level of the electrode,
The height dimension of the region through which the processing gas flows between the electrode and the ceiling surface of the gas activation channel is h, and the processing gas is between the electrode and the partition facing the electrode. A film forming apparatus , wherein the height dimension h and the width dimension w satisfy h ≧ w, where w is the width dimension of the flowing region . In a film forming apparatus for forming a thin film by laminating a plurality of reaction product layers by sequentially supplying at least two kinds of processing gases that react with each other in a vacuum vessel to the surface of a substrate and executing this supply cycle ,
A rotary table provided in the vacuum vessel;
A substrate placement area provided for placing the substrate on the turntable;
A first reaction gas supply unit that is provided apart from each other in the rotation direction of the turntable and supplies a first process gas and a second process gas to the surface of the substrate on the substrate mounting area side, respectively. And a second reactive gas supply unit;
In order to separate the atmosphere of the first processing region to which the first processing gas is supplied and the second processing region to which the second processing gas is supplied, it is located between these processing regions in the rotation direction. A separation region;
In order to separate the atmospheres of the first processing region and the second processing region, a discharge hole for discharging a separation gas is formed on the substrate mounting surface side of the rotary table, which is located in the center of the vacuum vessel. A central area;
An exhaust port provided in the vacuum vessel to evacuate the vacuum vessel;
An activated gas injector for supplying an activated gas to the substrate placed in the substrate placement region to modify the thin film on the substrate, and
The separation region includes a separation gas supply unit for supplying a separation gas, and a narrow space for the separation gas supplied from the separation gas supply unit to flow from the separation region to the processing region along the rotation direction. A ceiling surface for forming between the rotary table and
The ceiling surface is configured so that a width along the rotation direction is widened toward an outer edge of the vacuum vessel,
The height dimension from the turntable to the ceiling surface is set smaller than each height dimension of the first processing area and the second processing area,
The activated gas injector is
A flow path forming member partitioned into a gas activation flow path and a gas introduction flow path by a partition;
A gas introduction port for introducing a reforming gas into the gas introduction flow path;
A pair of electrodes provided in the gas activation flow path so as to extend in parallel with each other along the partition wall, and to which power for activating the reforming gas is applied;
A communication hole provided in the partition wall along the length direction of the electrode, for supplying the gas for reforming in the gas introduction channel to the gas activation channel;
A gas outlet provided along the length direction of the electrode in the gas activation channel for discharging the gas activated in the gas activation channel ;
The film forming apparatus , wherein a gas discharge port of the activated gas injector is provided at a height position of 1 mm or more and 10 mm or less from a surface of a substrate placed in the substrate placement region .   The film forming apparatus according to claim 1, wherein each of the pair of electrodes is covered with ceramics.   A gas introduction nozzle provided along the partition wall in the gas introduction flow path and having a gas hole formed in a length direction and the gas introduction port formed on a proximal end side is provided. The film forming apparatus according to any one of claims 1 to 3. In a film forming apparatus for forming a thin film by laminating a plurality of reaction product layers by sequentially supplying at least two kinds of processing gases that react with each other in a vacuum vessel to the surface of a substrate and executing this supply cycle ,
A rotary table provided in the vacuum vessel;
A substrate placement area provided for placing the substrate on the turntable;
A first reaction gas supply unit that is provided apart from each other in the rotation direction of the turntable and supplies a first process gas and a second process gas to the surface of the substrate on the substrate mounting area side, respectively. And a second reactive gas supply unit;
In order to separate the atmosphere of the first processing region to which the first processing gas is supplied and the second processing region to which the second processing gas is supplied, it is located between these processing regions in the rotation direction. A separation region;
In order to separate the atmospheres of the first processing region and the second processing region, a discharge hole for discharging a separation gas is formed on the substrate mounting surface side of the rotary table, which is located in the center of the vacuum vessel. A central area;
An exhaust port provided in the vacuum container for exhausting the inside of the vacuum container,
The separation region includes a separation gas supply unit for supplying a separation gas, and a narrow space for the separation gas supplied from the separation gas supply unit to flow from the separation region to the processing region along the rotation direction. A ceiling surface for forming between the rotary table and
The ceiling surface is configured so that a width along the rotation direction is widened toward an outer edge of the vacuum vessel,
The height dimension from the turntable to the ceiling surface is set smaller than each height dimension of the first processing area and the second processing area,
At least one of the first reactive gas supply unit and the second reactive gas supply unit is
A flow path forming member partitioned into a gas activation flow path and a gas introduction flow path by a partition;
A gas introduction port for introducing a processing gas into the gas introduction flow path;
A heater provided to extend along the partition wall in the gas activation channel, and for heating and activating the processing gas in the gas activation channel;
A communication hole provided in the partition wall along the length direction of the heater, for supplying a processing gas in the gas introduction channel to the gas activation channel;
An activation device comprising: a gas discharge port provided along the length direction of the heater in the gas activation channel for discharging the gas activated in the gas activation channel; Configured as a gas injector ,
The film forming apparatus , wherein a gas discharge port of the activated gas injector is provided at a height position of 1 mm or more and 10 mm or less from a surface of a substrate placed in the substrate placement region . In a film forming apparatus for forming a thin film by laminating a plurality of reaction product layers by sequentially supplying at least two kinds of processing gases that react with each other in a vacuum vessel to the surface of a substrate and executing this supply cycle ,
A rotary table provided in the vacuum vessel;
A substrate placement area provided for placing the substrate on the turntable;
A first reaction gas supply unit that is provided apart from each other in the rotation direction of the turntable and supplies a first process gas and a second process gas to the surface of the substrate on the substrate mounting area side, respectively. And a second reactive gas supply unit;
In order to separate the atmosphere of the first processing region to which the first processing gas is supplied and the second processing region to which the second processing gas is supplied, it is located between these processing regions in the rotation direction. A separation region;
In order to separate the atmospheres of the first processing region and the second processing region, a discharge hole for discharging a separation gas is formed on the substrate mounting surface side of the rotary table, which is located in the center of the vacuum vessel. A central area;
An exhaust port provided in the vacuum vessel to evacuate the vacuum vessel;
An activated gas injector for supplying an activated gas to the substrate placed in the substrate placement region to modify the thin film on the substrate, and
The separation region includes a separation gas supply unit for supplying a separation gas, and a narrow space for the separation gas supplied from the separation gas supply unit to flow from the separation region to the processing region along the rotation direction. A ceiling surface for forming between the rotary table and
The ceiling surface is configured so that a width along the rotation direction is widened toward an outer edge of the vacuum vessel,
The height dimension from the turntable to the ceiling surface is set smaller than each height dimension of the first processing area and the second processing area,
The activated gas injector is
A flow path forming member partitioned into a gas activation flow path and a gas introduction flow path by a partition;
A gas introduction port for introducing a reforming gas into the gas introduction flow path;
A heater provided to extend along the partition wall in the gas activation channel, and for heating and activating the reforming gas in the gas activation channel;
A communication hole provided in the partition wall along the length direction of the heater, for supplying the gas for reforming in the gas introduction channel to the gas activation channel;
A gas outlet provided in the gas activation channel along the length direction of the heater for discharging the gas activated in the gas activation channel ;
The film forming apparatus , wherein a gas discharge port of the activated gas injector is provided at a height position of 1 mm or more and 10 mm or less from a surface of a substrate placed in the substrate placement region . The activated gas injector is
7. The film forming apparatus according to claim 1, wherein the film forming apparatus is provided so as to face a substrate mounting region side of the turntable and to intersect a moving path of the turntable. Gas discharge port of the activated gas injector of claim 1, wherein the substrate placement area on the mounting substrate surface from 1mm or more, is provided below the height 10mm Deposition device.   The outer surface portion of the activated gas injector is configured as a cover body that covers the gas activation flow path and the gas introduction flow path, and the lower end portion of the cover body is intruded by gas from the outside into the cover body. The film forming apparatus according to claim 2, wherein the film forming apparatus is configured as an air flow regulating member that extends in parallel with the rotary table and through a gap.   The activated gas injector is attached to the side wall of the vacuum vessel in an airtight manner so as to freely adjust the distance between the activated gas injector and the surface of the substrate on the rotary table. And the film forming apparatus according to any one of 9.   The activated gas injector is tiltably and airtightly attached to the side wall of the vacuum vessel so that the activated gas injector can be inclined with respect to the surface of the substrate on the rotary table in a direction intersecting the moving path of the rotary table. The film forming apparatus according to claim 2, wherein the film forming apparatus is characterized.

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