JP2014192304A - Substrate processing apparatus and method of manufacturing semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To supply and react material gas sufficiently in a short time when rotating a plurality of process regions for processing.SOLUTION: A substrate processing apparatus includes a process chamber which processes a substrate and is divided in a plurality of gas introduction regions including a first gas introduction region in which first gas is introduced by a division structure body, a substrate placing stage which is provided in the process chamber and has a placing surface on which a plurality of substrates are concentrically placed, a rotation mechanism for rotating the substrate placing stage in the direction parallel to the placing surface, a first gas supply part containing a first gas supply tube for supplying the first gas into the first gas introduction region and a gas heating part for heating the first gas, and a discharge part for discharging the gas supplied from the first gas supply part out of the process chamber.

Description

  The present invention relates to a method for manufacturing a semiconductor device and a substrate processing method having a step for processing a substrate, and a substrate processing apparatus for performing the steps related to the method for manufacturing a semiconductor device and the substrate processing method.

  For example, a substrate processing step of forming a thin film on a substrate may be performed as one step of a manufacturing process of a semiconductor device such as a flash memory or a DRAM (Dynamic Random Access Memory). As a substrate processing apparatus for performing such a process, a plurality of processing regions (reaction cells) are provided on a susceptor, and each processing gas is partitioned, accommodated and retained in the processing region, and a plurality of processing regions are respectively mounted on the processing regions. There is known a thin film deposition apparatus provided with a processing chamber for simultaneously forming a thin film on a substrate (see, for example, Patent Document 1).

Special table 2008-524842

  In the thin film deposition apparatus as described above, for example, a film is formed by reacting a plurality of processing gases. At this time, a different processing gas is supplied to each processing region, and a substrate is processed by rotating a susceptor on which a plurality of substrates are mounted. In such an apparatus, when the susceptor rotation speed is increased, the reaction time between the processing gases is shortened, so that a uniform reaction does not proceed and it is difficult to maintain good in-plane uniformity of the deposited film. . On the other hand, in order to improve in-plane uniformity, there are a method of supplying a processing gas at a large flow rate and a method of supplying a processing gas on a substrate as a high-pressure condition.

  However, it is difficult to flow a raw material gas under a large flow rate and a high pressure condition in an apparatus having a plurality of processing regions in the processing chamber and flowing a plurality of types of processing gases. When one processing gas is flowed at a large flow rate, an excessive one processing gas flows from a region where one gas is supplied into another processing region. One gas reacts with the other processing gas supplied to the processing region, and a by-product problem occurs. Further, if one process gas is excessively flowed, the process gas is exhausted in a large amount, and the amount of gas consumption increases. In addition, when one processing gas is supplied to the first processing region while the processing chamber is in a high pressure state, the other processing regions also have a high pressure, so it is difficult to control the pressure to balance the pressure in the other processing regions. Become.

  Thus, in the thin film deposition apparatus as described above, since the susceptor rotates and passes through each processing region, the reaction time with each processing gas species is determined by the time passing through the processing region, and is the size of the processing region. Proportional. Although there is a partition between the processing regions, the processing chambers are in communication with each other, so that the pressure in the processing chamber is constant. For this reason, restrictions are imposed on the reaction of each processing gas. That is, in a process configured to supply a plurality of types of process gases to the respective process areas, it is necessary to cause the process areas to react sufficiently and uniformly under the conditions of the same pressure and the same gas flow rate.

In view of the above, in a substrate processing apparatus that has a plurality of processing regions, supplies a processing gas to each processing region, and rotates the susceptor on which a plurality of substrates are mounted to process the substrate, the raw material under a large flow rate and a high pressure condition There is a need for a processing technique capable of supplying and reacting a raw material gas sufficiently and uniformly in a short time without flowing a gas.
An object of the present invention is to provide a substrate processing apparatus and a semiconductor device manufacturing method capable of supplying and reacting a source gas sufficiently and uniformly in a short time when processing by rotating a plurality of processing regions. is there.

A typical configuration of the substrate processing apparatus according to the present invention for solving the above-described problems is as follows. That is,
A processing chamber for processing a substrate, wherein the processing chamber is divided into a plurality of gas introduction regions including a first gas introduction region into which the first gas is introduced by the divided structure;
A substrate mounting table provided in the processing chamber, the substrate mounting table having a mounting surface on which a plurality of substrates are mounted concentrically;
A rotation mechanism for rotating the substrate mounting table in a direction parallel to the mounting surface;
A first gas supply unit having a first gas supply pipe for supplying the first gas to the first gas introduction region, and a gas heating unit for heating the first gas;
An exhaust unit for exhausting the gas supplied from the first gas supply unit from the processing chamber;
A substrate processing apparatus.

Another typical configuration of the method for manufacturing a semiconductor device according to the present invention is as follows. That is,
A process chamber dividing step of dividing a processing chamber for processing a substrate into a plurality of gas introduction regions including a first gas introduction region into which a first gas is introduced;
A substrate placement step of placing a plurality of substrates on a substrate placement table provided in the processing chamber and having a placement surface on which the plurality of substrates are placed concentrically;
While rotating the substrate mounting table on which the plurality of substrates are mounted in a direction parallel to the mounting surface, the first gas is heated and introduced into the first gas introduction region, and the substrate mounting table A substrate processing step for processing a plurality of substrates placed on the substrate;
A substrate unloading step of unloading the substrate processed in the substrate processing step from the processing chamber;
A method for manufacturing a semiconductor device comprising:

  According to said structure, when processing by rotating a some process area | region, source gas can fully be supplied and made to react in a short time.

1 is a schematic top view of a substrate processing apparatus according to an embodiment of the present invention. 1 is a schematic vertical sectional view of a substrate processing apparatus according to an embodiment of the present invention. It is a schematic horizontal sectional view of a substrate processing chamber according to an embodiment of the present invention. 1 is a schematic vertical sectional view of a substrate processing chamber according to an embodiment of the present invention. It is a flowchart explaining the substrate processing process which concerns on embodiment of this invention. It is a flowchart explaining the film-forming process which concerns on embodiment of this invention. It is a figure which shows the relationship between the temperature of the raw material dilution gas which concerns on embodiment of this invention, and film thickness uniformity.

(1) Configuration of Substrate Processing Apparatus First, the configuration of a substrate processing apparatus according to an embodiment of the present invention will be described with reference to FIG. 1 and FIG. FIG. 1 is a schematic top view of a multi-wafer type substrate processing apparatus 10 according to the present embodiment. FIG. 2 is a schematic vertical sectional view of the substrate processing apparatus 10 according to the present embodiment.

  In the substrate processing apparatus 10 according to the present embodiment, a FOUP (Front Opening Unified Pod, hereinafter referred to as a pod) is used as a carrier for transporting a substrate such as the processing substrate 200 as a product. In the following description, front, rear, left and right are based on FIG. That is, the X1 direction shown in FIG. 1 is the right, the X2 direction is the left, the Y1 direction is the front, and the Y2 direction is the back.

  As shown in FIGS. 1 and 2, the substrate processing apparatus 10 includes a first transfer chamber 103 configured in a load-lock chamber structure that can withstand a pressure (negative pressure) less than atmospheric pressure such as a vacuum state. ing. The casing 101 of the first transfer chamber 103 is formed in a box shape with a pentagonal plan view and closed both upper and lower ends. In the first transfer chamber 103, a first substrate transfer machine 112 capable of simultaneously transferring two substrates 200 under a negative pressure is installed. Here, the first substrate transfer machine 112 may be one that can transfer a single substrate 200. The first substrate transfer machine 112 is configured to be moved up and down by the first substrate transfer machine elevator 115 while maintaining the airtightness of the first transfer chamber 103.

  Of the five side walls of the casing 101, two side walls located on the front side are provided with spare chambers 122 and 123 in which a spare chamber for loading and a spare chamber for unloading can be used in combination with gate valves 126 and 127, respectively. Are connected to each other, and each has a structure capable of withstanding negative pressure. Furthermore, two substrates 200 can be stacked in the reserve chambers (load lock chambers) 122 and 123 by the substrate support stand 140.

  In the preliminary chambers 122 and 123, a partition plate (intermediate plate) 141 is installed between the substrates. When a plurality of processed substrates enter the preparatory chamber 122 or 123, the heat of the previously processed substrate being cooled is slowed down due to the thermal effect of the processed substrate that has entered next. Interference can be prevented by providing a partition plate.

  Here, a general method for increasing the cooling efficiency will be described. Cooling water, a chiller, or the like is allowed to flow through the preliminary chambers 122 and 123 and the partition plate 141. With such a structure, the wall surface temperature can be kept low, and the cooling efficiency can be increased for any processed substrate in any slot. At negative pressure, if the distance between the substrate and the partition plate is too far, the cooling efficiency due to heat exchange will decrease. Therefore, as a method to improve the cooling efficiency, after placing the substrate support on the substrate support (pin), There is a case where a drive mechanism is provided for moving up and down to approach the spare chamber wall surface.

  A second transfer chamber 121 used at substantially atmospheric pressure is connected to the front side of the preliminary chamber 122 and the preliminary chamber 123 via gate valves 128 and 129. A second substrate transfer machine 124 for transferring the substrate 200 is installed in the second transfer chamber 121. The second substrate transfer machine 124 is configured to be moved up and down by a second substrate transfer machine elevator 131 installed in the second transfer chamber 121 and is reciprocated in the left-right direction by a linear actuator 132. It is comprised so that.

  As shown in FIG. 1, a notch or orientation flat aligning device 106 can be installed on the left side of the second transfer chamber 121. Further, as shown in FIG. 2, a clean unit 118 for supplying clean air is installed in the upper part of the second transfer chamber 121.

  As shown in FIGS. 1 and 2, on the front side of the casing 125 of the second transfer chamber 121, a substrate loading / unloading port 134 for loading and unloading the substrate 200 to and from the second transfer chamber 121. A pod opener 108 is installed. A load port (IO stage) 105 is installed on the opposite side of the pod opener 108 across the substrate loading / unloading port 134, that is, on the outside of the housing 125. The pod opener 108 includes a closure 142 that can open and close the cap 100 a of the pod 100 and close the substrate loading / unloading port 134, and a drive mechanism 136 that drives the closure 142, and the pod placed on the load port 105. By opening and closing the cap 100a of 100, the substrate 200 can be taken in and out of the pod 100. The pod 100 is supplied to and discharged from the load port 105 by an in-process transfer device (OHT or the like) (not shown).

  As shown in FIG. 1, the four side walls located on the rear side (back side) among the five side walls of the first transfer chamber casing 101 are subjected to a desired process on the substrate. , The second processing chamber 202b, the third processing chamber 202c, and the fourth processing chamber 202d are connected adjacently via gate valves 150, 151, 152, and 153, respectively.

  Hereinafter, processing steps using the substrate processing apparatus having the above-described configuration will be described. The following control is controlled by a control unit (controller) 300 as shown in FIGS. 1 and 2. The controller 300 controls the entire apparatus in the above configuration.

  With a maximum of 25 substrates 200 stored in the pod 100, the substrate 200 is transferred to the substrate processing apparatus for performing the processing process by the in-process transfer apparatus. As shown in FIG. 1 and FIG. 2, the pod 100 that has been transported is delivered and placed on the load port 105 from the in-process transport device. The cap 100a of the pod 100 is removed by the pod opener 108, and the substrate outlet of the pod 100 is opened.

  After the pod 100 is opened by the pod opener 108, the second substrate transfer machine 124 installed in the second transfer chamber 121 picks up the substrate 200 from the pod 100. Further, the second substrate transfer machine 124 carries the substrate 200 into the preliminary chamber 122 and transfers the substrate 200 to the substrate support 140. During this transfer operation, the gate valve 126 on the first transfer chamber 103 side of the preliminary chamber 122 is closed, and the negative pressure in the first transfer chamber 103 is maintained. When the transfer of the substrate 200 stored in the pod 100 to the substrate support base 140 is completed, the gate valve 128 is closed, and the inside of the preliminary chamber 122 is exhausted to a negative pressure by an exhaust device (not shown).

  When the pressure in the preliminary chamber 122 reaches a preset pressure value, the gate valve 126 is opened, and the preliminary chamber 122 and the first transfer chamber 103 communicate with each other. Subsequently, the first substrate transfer machine 112 in the first transfer chamber 103 loads the substrate 200 from the substrate support 140 into the first transfer chamber 103. After the gate valve 126 is closed, the gate valve 151 is opened, and the first transfer chamber 103 and the second processing chamber 202b are communicated with each other. After the gate valve 151 is closed, a processing gas is supplied into the second processing chamber 202 and a desired process is performed on the substrate 200.

When the processing on the substrate 200 is completed in the second processing chamber 202b, the gate valve 151 is opened, and the substrate 200 is carried out to the first transfer chamber 103 by the first substrate transfer machine 112. After unloading, the gate valve 151 is closed.
Subsequently, the gate valve 127 is opened, and the first substrate transfer machine 112 transports the substrate 200 unloaded from the second processing chamber 202b to the substrate support 140 in the preliminary chamber 123, and the processed substrate 200 is cooled. Is done.

  When the processed substrate 200 is transferred to the preliminary chamber 123 and a preset cooling time has elapsed, the preliminary chamber 123 is returned to approximately atmospheric pressure by the inert gas. When the inside of the preliminary chamber 123 is returned to substantially atmospheric pressure, the gate valve 129 is opened, and the cap 100 a of the empty pod 100 placed on the load port 105 is opened by the pod opener 108.

Subsequently, the second substrate transfer machine 124 in the second transfer chamber 121 carries the substrate 200 from the substrate support base 140 to the second transfer chamber 121 and passes through the substrate loading / unloading port 134 in the second transfer chamber 121. Store it in the pod 100.
Here, the cap 100a of the pod 100 may continue to be emptied until a maximum of 25 substrates are returned, or may be returned to the pod from which the substrate is taken out without being stored in the empty pod 100.

  By repeating the above operation, when the 25 processed substrates 200 are completely stored in the pod 100, the cap 100 a of the pod 100 is closed by the pod opener 108. The closed pod 100 is transported from the top of the load port 105 to the next process by the in-process transport device.

  The above operation has been described by taking the case where the second processing chamber 202b and the spare chambers 122 and 123 are used as an example. However, the first processing chamber 202a, the third processing chamber 202c, and the fourth processing chamber 202d The same operation is performed when used.

  In addition, although four processing chambers have been described here, the number of processing chambers may be determined depending on the type of the corresponding substrate and the film to be formed.

  In the above-described substrate processing apparatus, the spare chamber 122 is used for carrying in and the spare chamber 123 is used for carrying out. However, the spare chamber 123 may be used for carrying in, and the spare chamber 122 may be used for carrying out, or the spare chamber 122 or the spare chamber may be used. 123 may be used in combination for loading and unloading.

  By dedicating the spare chamber 122 or the spare chamber 123 for loading and unloading, cross-contamination can be reduced, and the combined use can improve the substrate transport efficiency.

  Further, the same processing may be performed in all the processing chambers, or different processing may be performed in each processing chamber. For example, when different processing is performed in the first processing chamber 202a and the second processing chamber 202b, after the processing on the substrate 200 is performed in the first processing chamber 202a, the second processing chamber 202b is continuously processed. May be performed. In the case where another processing is performed in the second processing chamber 202b after the processing on the substrate 200 is performed in the first processing chamber 202a, the processing may be performed via the spare chamber 122 or the spare chamber 123.

  Further, at least one of the processing chambers 202a to 202b is required to be connected to the processing chamber, and the processing chambers 202c and 202d can be connected in a maximum of four locations such as the processing chambers 202a to 202d. Any number of combinations may be connected.

  Further, the number of substrates to be processed in the processing chamber may be one or plural. Similarly, in the preliminary chamber 122 or 123, a single substrate or a plurality of substrates may be cooled. The number of processed substrates that can be cooled may be any combination as long as it is within a range of up to five sheets that can be inserted into the slots of the spare chambers 122 and 123.

  Alternatively, the substrate may be processed by loading the substrate into the processing chamber by opening and closing the gate valve of the preliminary chamber 122 while the processed substrate is being carried in the preliminary chamber 122 and being cooled. Similarly, the substrate may be processed by bringing the substrate into the processing chamber by opening and closing the gate valve of the preliminary chamber 123 while the processed substrate is carried in the preliminary chamber 123 and cooling is being performed.

  Here, if the gate valves 128 and 129 on the substantially atmospheric side are opened without sufficient cooling time, the radiant heat of the substrate 200 damages the spare chamber 122 or 123 or the electrical components connected around the spare chamber. there is a possibility. Therefore, when cooling a high-temperature substrate, the substrate with large radiant heat that has been processed is transferred into the preliminary chamber 122 and cooling is performed, and the gate valve of the preliminary chamber 123 is opened and closed to place the substrate in the processing chamber. Carry in and process substrates. Similarly, while the processed substrate is carried into the preliminary chamber 123 and cooling is being performed, the gate valve of the preliminary chamber 122 can be opened and closed, and the substrate can be loaded into the processing chamber to process the substrate.

(2) Configuration of Processing Chamber Subsequently, the configuration of the processing chamber 202 according to the present embodiment will be described mainly with reference to FIGS. This processing chamber 202 is, for example, the first processing chamber 202b described above. FIG. 3 is a schematic horizontal cross section (transverse cross section) of the processing chamber according to the present embodiment. 4 is a schematic vertical cross-sectional view (longitudinal cross-section) of the processing chamber according to the present embodiment, and is a cross-sectional view taken along the line AA ′ of the processing chamber shown in FIG.

(Reaction vessel)
As shown in FIGS. 3 to 4, the processing chamber 202 includes a reaction vessel 203 that is a cylindrical airtight vessel. A processing space 207 for the substrate 200 is formed in the reaction vessel 203. On the upper side of the processing space 207 in the reaction vessel 203, four partition plates 205 extending radially from the center are provided. The partition plate 205 is attached to the reaction vessel ceiling 203a. The four partition plates 205 are configured to partition the processing space 207 into four regions, that is, a first processing region 201a, a first purge region 204a, a second processing region 201b, and a second purge region 204b. Has been. In other words, the processing area and the purge area are arranged adjacent to each other. Note that the first processing region 201a, the first purge region 204a, the second processing region 201b, and the second purge region 204b are in the direction of rotation of a susceptor (substrate mounting table) 217 (shown by an arrow B in FIG. 3). (Direction) and arranged in this order.

As will be described later, by rotating the susceptor 217, the substrate 200 placed on the susceptor 217 has a first processing region 201a, a first purge region 204a, a second processing region 201b, and a second purge. It moves in the order of the area 204b. As will be described later, the first processing gas as the first gas is supplied into the first processing region 201a, and the second processing as the second gas is supplied into the second processing region 201b. A gas is supplied, and an inert gas is supplied into the first purge region 204a and the second purge region 204b. Therefore, by rotating the susceptor 217, the first processing gas, the inert gas, the second processing gas, and the inert gas are supplied onto the substrate 200 in this order. The configurations of the susceptor 217 and the gas supply system will be described later.
As described above, the partition plate 205 divides the inside of the processing chamber 202 into a plurality of gas introduction regions. Specifically, the processing gas introduction region into which the processing gas is introduced and the inert gas introduction region into which the inert gas is introduced. This is a divided structure that is divided into two. The partition plate 205 is formed of a material such as aluminum or quartz, for example.

  A gap with a predetermined width is provided between the end of the partition plate 205 and the side wall of the reaction vessel 203, and the gas can pass through this gap. Through this gap, an inert gas is ejected from the first purge region 204a and the second purge region 204b toward the first processing region 201a and the second processing region 201b. By doing so, the processing gas can be prevented from entering the first purge region 204a and the second purge region 204b, and the reaction of the processing gas can be prevented. Yes.

  In the present embodiment, the angle between the partition plates 205 is 90 degrees, but the present invention is not limited to this. That is, in consideration of the supply time of various gases to the substrate 200, for example, the angle between the two partition plates 205 forming the second processing region 201b may be increased or the like may be changed as appropriate. .

  Moreover, although each process area | region was partitioned off with the partition plate 205, it is not restricted to it, What is necessary is just the structure which can prevent mixing the gas supplied to each of process area | region 201a and 201b.

(Susceptor: substrate mounting table)
As shown in FIG. 3 to FIG. 4, the substrate having a rotation axis at the center of the reaction vessel 203 at the lower side of the partition plate 205, that is, at the bottom center in the reaction vessel 203, is configured to be rotatable. A susceptor 217 is provided as a mounting table. The susceptor 217 is formed of a non-metallic material such as carbon (C), aluminum nitride (AlN), ceramics, or quartz so that metal contamination of the substrate 200 can be reduced. In the case of substrate processing not considering metal contamination, aluminum (Al) may be used. The susceptor 217 is electrically insulated from the reaction vessel 203.

  The susceptor 217 is configured to support a plurality of (for example, five in this embodiment) substrates 200 side by side on the same surface and on the same circumference in the reaction vessel 203. Here, “on the same plane” is not limited to the completely same plane. When the susceptor 217 is viewed from above, a plurality of substrates 200 do not overlap each other as shown in FIGS. As long as they are lined up. Thus, the susceptor 217 has a mounting surface on which a plurality of substrates 200 are mounted concentrically, and the mounting surface is configured to face the ceiling of the reaction vessel 203.

  In addition, it is preferable to provide the substrate mounting portion 217b corresponding to the number of substrates 200 to be processed at the support position of the substrate 200 on the surface of the susceptor 217. For example, the substrate platform 217b may have a circular shape when viewed from the top surface and a concave shape when viewed from the side surface. In this case, it is preferable that the diameter of the substrate mounting portion is configured to be slightly larger than the diameter of the substrate 200. By placing the substrate 200 in the substrate placement portion 217b, the substrate 200 can be easily positioned. Further, it is possible to prevent positional deviation that occurs when the substrate 200 jumps out of the susceptor 217 due to the centrifugal force accompanying the rotation of the susceptor 217.

  As shown in FIG. 4, the susceptor 217 is provided with a lifting mechanism 268 that lifts and lowers the susceptor 217. The susceptor 217 is provided with a plurality of through holes 217a. A plurality of substrate push-up pins 266 that push up the substrate 200 and support the back surface of the substrate 200 when the substrate 200 is carried into and out of the reaction vessel 203 are provided on the bottom surface of the reaction vessel 203 described above. The through-hole 217a and the board push-up pin 266 pass through the through-hole 217a in a state where the board push-up pin 266 is not in contact with the susceptor 217 when the board push-up pin 266 is raised or when the susceptor 217 is lowered by the lifting mechanism 268. Are arranged with each other.

  The elevating mechanism 268 is provided with a rotating mechanism 267 that rotates the susceptor 217. A rotation shaft (not shown) of the rotation mechanism 267 is connected to the susceptor 217. By operating the rotation mechanism 267, the susceptor 217 is configured to rotate in a direction parallel to the mounting surface of the susceptor 217. The control unit 300 is connected to the rotation mechanism 267 via a coupling unit 267a. The coupling portion 267a is configured as a slip ring mechanism that electrically connects the rotating side and the fixed side with a metal brush or the like. This prevents the rotation of the susceptor 217 from being hindered. The controller 300 is configured to control the energization of the rotation mechanism 267 so that the susceptor 217 is rotated at a predetermined speed for a predetermined time. As described above, by rotating the susceptor 217, the substrate 200 placed on the susceptor 217 has the first processing region 201 a, the first purge region 204 a, the second processing region 201 b, and the second purge. The region 204b is moved in this order.

(Susceptor heating part)
A heater 218 as a susceptor heating unit is integrally embedded in the susceptor 217. When power is supplied to the heater 218, the substrate 200 placed on the substrate platform 217b is heated. For example, the surface of the substrate 200 is heated to a predetermined temperature (for example, room temperature to about 1000 ° C.). A plurality (for example, five) of heaters 218 may be provided on the same surface so as to individually heat the respective substrates 200 placed on the susceptor 217.

  The susceptor 217 is provided with a temperature sensor 274. A temperature regulator 223, a power regulator 224, and a heater power source 225 are electrically connected to the heater 218 and the temperature sensor 274 via a power supply line 222. Based on the temperature information detected by the temperature sensor 274, the power supply to the heater 218 is controlled.

(Gas introduction part)
A gas introduction unit 250 including a first process gas introduction unit 251, a second process gas introduction unit 252, and an inert gas introduction unit 253 is provided above the reaction vessel 203. The gas introduction unit 250 is provided in an airtight manner in an opening formed above the central portion of the susceptor 217 and above the reaction vessel 203. A first gas outlet 254 is provided on the side wall of the first processing gas introduction part 251. A second gas outlet 255 is provided on the side wall of the second processing gas introduction part 252. A first inert gas outlet 256 and a second inert gas outlet 257 are provided on the side wall of the inert gas inlet 253 so as to face each other.

  The gas introduction unit 250 introduces the first processing gas from the first processing gas introduction unit 251 into the first processing region 201a, and the second processing gas introduction unit 252 introduces the first processing gas into the second processing region 201b. The second processing gas is introduced, and the inert gas is introduced into the first purge region 204a and the second purge region 204b from the inert gas introduction part 253. The gas introduction part 250 can introduce each processing gas and the inert gas from the inert gas introduction part 253 individually into each region without mixing them. Furthermore, the processing gas and the inert gas are combined. It can be introduced into each area.

(Processing gas supply unit)
A first gas supply pipe 232 a is connected to the upstream side of the first processing gas introduction part 251. A first heating unit 232ah is provided in the first gas supply pipe 232a.
A first processing gas supply pipe 232f is connected to the upstream side of the first gas supply pipe 232a. The first process gas supply pipe 232f is provided with a raw material gas supply source 232b, a mass flow controller (MFC) 232c as a flow rate controller (flow rate control unit), and a valve 232d as an on-off valve in order from the upstream direction. Yes. The first processing gas supply pipe 232f is provided with a second heating unit 232fh. The first heating unit 232ah and the second heating unit 232fh will be described later.

From the source gas supply source 232b, as the first process gas, for example, a silicon-containing gas is a mass flow controller 232c, a valve 232d, a first gas supply pipe 232a, a first process gas introduction unit 251 and a first gas. It is supplied into the first processing region 201a via the jet port 254. As the silicon-containing gas, for example, a precursor butylaminosilane (SiH ₂ (NH (C ₄ H ₉ )) ₂ , abbreviation: BTBAS) gas can be used as a precursor. The first processing gas may be any of solid, liquid, and gas at normal temperature and pressure. When the first process gas is a liquid at normal temperature and pressure, such as BTBAS, the source gas supply source 232b is constituted by a thermostatic chamber containing a liquid BTBAS and a vaporizer. A bubbler, a vaporizer, etc. are used as a vaporizer. The vaporizer is set to vaporize at 50 ° C., for example.

As the silicon-containing gas, in addition to BTBAS, for example, hexamethyldisilazane (C ₆ H ₁₉ NSi ₂ , abbreviation: HMDS) which is an organic silicon material, trisdimethylaminosilane (Si [N (CH 3) 2] 3 H, Abbreviations: 3DMAS), trisilylamine ((SiH ₃ ) ₃ N, abbreviations: TSA), and the like can be used.
For these first processing gases, a material having a higher degree of adhesion than a second processing gas described later is used.

  A second gas supply pipe 233 a is connected to the upstream side of the second processing gas introduction part 252. In the second gas supply pipe 233a, a reactive gas supply source 233b, a mass flow controller (MFC) 233c that is a flow rate controller (flow rate control unit), and a valve 233d that is an on-off valve are provided in order from the upstream direction. .

From the reactive gas supply source 233b, as the second processing gas (reactive gas), for example, oxygen (O ₂ ) gas that is an oxygen-containing gas is supplied from the mass flow controller 233c, the valve 233d, the second processing gas introduction unit 252 and the second processing gas. The gas is supplied into the second processing region 201b through the second gas outlet 255. The oxygen gas that is the second processing gas is brought into a plasma state by the plasma generation unit 206 and exposed to the substrate 200. The oxygen gas that is the second processing gas may be activated by adjusting the temperature of the heater 218 and the pressure in the reaction vessel 203 within a predetermined range. Note that ozone (O ₃ ) gas or water vapor (H ₂ O) may be used as the oxygen-containing gas.
These second process gases are made of a material having a lower degree of adhesion than the first process gas.

A first process gas supply unit (also referred to as a silicon-containing gas supply system) 232 is mainly configured by the first gas supply pipe 232a, the first process gas supply pipe 232f, and the valve 232d. The source gas supply source 232b, the mass flow controller 232c, the first heating unit 232ah, the second heating unit 232fh, the first processing gas introduction unit 251 and the first gas outlet 254 are used as the first processing gas supply unit. You may think including it.
In addition, a second processing gas supply unit (also referred to as an oxygen-containing gas supply system) 233 is mainly configured by the second gas supply pipe 233a, the mass flow controller 233c, and the valve 233d. Note that the reactive gas supply source 233b, the second processing gas introduction unit 252 and the second gas outlet 255 may be included in the second processing gas supply unit. And a process gas supply part is mainly comprised by the 1st process gas supply part and the 2nd process gas supply part.

(Inert gas supply unit)
A downstream end of the first inert gas supply pipe 235a is connected to the downstream side of the valve 232d of the first gas supply pipe 232a. The first inert gas supply pipe 235a includes, in order from the upstream direction, an inert gas supply source 235b, a mass flow controller (MFC) 235c which is a flow rate controller (flow rate control unit), and a heat exchanger as a third heating unit. 235g and a valve 235d which is an on-off valve are provided. The function of the heat exchanger 235g will be described later.

From the inert gas supply source 235b, for example, N ₂ gas is supplied as an inert gas to the first gas supply pipe 232a via the mass flow controller 235c, the heat exchanger 235g, and the valve 235d, Are supplied into the first processing region 201a via the processing gas introduction part 251 and the first gas outlet 254. The inert gas supplied into the first processing region 201a acts as a carrier gas or a dilution gas in the film forming step (S106).

  The first inert gas supply unit 235 is mainly configured by the first inert gas supply pipe 235a, the mass flow controller 235c, and the valve 235d. The inert gas supply source 235b, the first gas supply pipe 232a, the heat exchanger 235g, the first process gas introduction part 251 and the first gas outlet 254 are connected to the first inert gas supply part 235. You may think including it.

  Further, the downstream end of the second inert gas supply pipe 236a is connected to the downstream side of the valve 233d of the second gas supply pipe 233a. The second inert gas supply pipe 236a is provided with an inert gas supply source 236b, a mass flow controller (MFC) 236c, which is a flow rate controller (flow rate control unit), and a valve 236d, which is an on-off valve, in order from the upstream direction. It has been.

From the inert gas supply source 236b, for example, N ₂ gas is supplied as an inert gas to the second gas supply pipe 233a via the mass flow controller 236c and the valve 236d. The gas is supplied into the second processing region 201b via 252 and the second gas outlet 255. The inert gas supplied into the second processing region 201b acts as a carrier gas or a dilution gas in the film forming step (S106), similarly to the inert gas supplied into the first processing region 201a.

  The second inert gas supply unit 236 is mainly configured by the second inert gas supply pipe 236a, the mass flow controller 236c, and the valve 236d. Note that the inert gas supply source 236b, the second gas supply pipe 233a, the second processing gas introduction part 252 and the second gas jet outlet 255 may be included in the second inert gas supply part 236. Good.

  A third inert gas supply pipe 234 a is connected to the upstream side of the inert gas introduction part 253. The third inert gas supply pipe 234a is provided with an inert gas supply source 234b, a mass flow controller (MFC) 234c, which is a flow rate controller (flow rate control unit), and a valve 234d, which is an on-off valve, in order from the upstream direction. It has been.

An inert gas composed of, for example, nitrogen (N ₂ ) gas is supplied from the inert gas supply source 234b to the mass flow controller 234c, the valve 234d, the inert gas introduction unit 253, the first inert gas outlet 256, and the second The gas is supplied into the first purge region 204a and the second purge region 204b through the second inert gas outlet 257, respectively. The inert gas supplied into the first purge region 204a and the second purge region 204b acts as a purge gas in the film forming step (S106) described later.

A third inert gas supply unit 234 is mainly configured by the third inert gas supply pipe 234a, the mass flow controller 234c, and the valve 234d. The inert gas supply source 234b, the inert gas inlet 253, the first inert gas outlet 256, and the second inert gas outlet 257 are included in the third inert gas supply part 234. May be. And an inert gas supply part is mainly comprised by the 1st-3rd inert gas supply part.
In addition to N ₂ gas, for example, a rare gas such as helium (He) gas, neon (Ne) gas, or argon (Ar) gas can be used as the inert gas supplied from the inert gas supply unit.

(Gas supply part)
The processing gas supply unit and the inert gas supply unit constitute a gas supply unit.

Next, the first heating unit 232ah, the second heating unit 232fh, and the third heating unit (heat exchanger) 235g will be described.
The first heating unit 232ah heats the first gas flowing through the first gas supply pipe 232a to a predetermined temperature, for example, 100 ° C. or higher, preferably 120 ° C. or higher. By heating, when the diluted gas from the first inert gas supply pipe 235a and the N ₂ gas as the carrier gas are mixed with the BTBAS gas from the first processing gas supply pipe 232f, the BTBAS gas is cooled. To prevent re-liquefaction.

Note that silicon-containing gas such as BTBAS gas tends to adhere to a substrate or the like at a lower temperature. Therefore, at low temperatures, the thickness of the formed silicon-containing layer is likely to be uneven, and the in-plane uniformity of the thickness is reduced. On the other hand, when the temperature is high, the energy can be increased, so that it is easily diffused on the surface of the substrate and uniformly adheres to the substrate. As a result, the in-plane uniformity of the film thickness is improved.
Therefore, heating the first gas not only prevents liquefaction, but also improves the film thickness uniformity of the silicon-containing layer on the surface of the substrate 200 in the first processing region 201a. That is, the BTBAS gas is uniformly supplied to the surface of the substrate 200. As a result, the film thickness unevenness of the silicon-containing layer on the surface of the substrate 200 can be suppressed, and the in-plane uniformity of the film thickness can be improved.
Therefore, the first heating unit 232ah is a temperature at which the first process gas can be prevented from being liquefied in the first gas supply pipe 232a, and the temperature of the gas generated by the vaporizer of the gas supply source 232b. (50 ° C. in the case of the present embodiment) or higher than the temperature of the first gas supply pipe 232f described later and lower than the temperature at which the BTBAS gas is thermally decomposed (170 ° C. in the case of the present embodiment) One gas is heated. Specifically, for example, it is heated to 120 ° C. or higher. Since the pressure in the first gas supply pipe 232a is lower than that in the first process gas supply pipe 232f, the temperature at which the first process gas can be prevented from being liquefied in the first gas supply pipe 232a. Is lower than the temperature at which the first process gas can be prevented from being liquefied in the first process gas supply pipe 232f.
The first heating unit 232ah is configured by, for example, covering the outer periphery of the first gas supply pipe 232a with a tape heater or the like.

The second heating unit 232fh heats the first processing gas flowing in the first processing gas supply pipe 232f. The second heating unit 232fh is for preventing re-liquefaction of the source gas supplied from the source gas supply source 232b, and is heated to a temperature at which the source gas can be prevented from being re-liquefied in the first process gas supply pipe 232f. I can do it. For example, when the raw material gas is BTBAS gas, the temperature of the gas generated by the vaporizer of the gas supply source 232b is equal to or higher than the temperature at which re-liquefaction of the BTBAS gas can be prevented in the first process gas supply pipe 232f. In the case of this embodiment, it is heated to, for example, 60 ° C. at a temperature higher than 50 ° C. and lower than the temperature at which the BTBAS gas is thermally decomposed. By setting the temperature higher than the constant temperature bath of the gas supply source 232b, the source gas vaporized by the gas supply source 232b is reliquefied, and the source gas adheres in the first processing gas supply pipe 232f, which is a foreign matter. And can be prevented from becoming particles. In other words, the vaporized state of the raw material can be maintained.
The second heating unit 232fh is configured by, for example, covering the outer periphery of the first processing gas supply pipe 232f with a tape heater or the like.

The BTBAS gas, which is the first processing gas, requires a large amount of carrier gas (for example, N ₂ gas) in order to smoothly flow through the gas pipe. However, when a large amount of unheated carrier gas is mixed with BTBAS gas, which is a raw material gas, the raw material gas may be cooled and reliquefied.
Therefore, the first inert gas (N ₂ gas) as the carrier gas flowing in the first inert gas supply pipe 235a is converted into the first processing gas supply pipe by the heat exchanger 235g as the third heating unit. Heat to a temperature higher than 232f, for example, 100 ° C. or higher, preferably 120 ° C. or higher. By heating, when the first inert gas (N ₂ gas) is mixed with the BTBAS gas, the BTBAS gas is prevented from being cooled and re-liquefied.

Further, since the first gas can be heated by heating the first inert gas, the film thickness unevenness of the silicon-containing layer formed on the substrate is the same as the first heating unit 232ah described above. Can be suppressed.
The heat exchanger 235g preferably heats the first inert gas at a temperature equal to or higher than the first heating unit 232ah. Heating at a temperature equal to or higher than the first heating unit 232ah facilitates heating the first gas flowing through the first gas supply pipe 232a to a predetermined temperature or higher.

When the first inert gas (N ₂ gas) is heated by the heat exchanger 235g to a temperature higher than the heating temperature by the first heating unit 232ah, the inside of the first gas supply pipe 232a is As long as the flowing first gas can be heated to a predetermined temperature or higher, the degree of heating by the first heating unit 232ah can be reduced, or the first heating unit 232ah can be omitted. For example, when the length of the first gas supply pipe 232a is extremely short, the first heating unit 232ah may be omitted.

(Exhaust part)
As shown in FIG. 4, the reaction vessel 203 is provided with an exhaust pipe 231 for exhausting the atmosphere in the processing regions 201a and 201b and the purge regions 204a and 204b. The exhaust pipe 231 is evacuated through a flow rate control valve 245 as a flow rate controller (flow rate control unit) for controlling the gas flow rate and an APC (Auto Pressure Controller) valve 243 as a pressure regulator (pressure adjustment unit). A vacuum pump 246 serving as an exhaust device is connected, and is configured so that vacuum exhaust can be performed so that the pressure in the reaction vessel 203 becomes a predetermined pressure (degree of vacuum). The APC valve 243 is an open / close valve that can open and close the valve to evacuate or stop evacuation of the reaction vessel 203, and further adjust the valve opening to adjust the pressure. The exhaust part is mainly constituted by the exhaust pipe 231, the APC valve 243 and the flow rate control valve 245. Note that a vacuum pump 246 may be included in the exhaust part.

(Surceptor peripheral structure)
As shown in FIG. 3, the reaction container 203 is provided with a first transfer chamber casing 101 adjacent to one another via any one of gate valves 150 to 153. For example, when the gate valve 151 is opened, the inside of the reaction vessel 203 and the first transfer chamber casing 101 communicate with each other. The first substrate transfer machine 112 transports the substrate 200 from the pod to the placement unit 217 b of the susceptor 217 via the second substrate transfer machine 124.
As described above, the susceptor 217 has a plurality of mounting portions 217b on which the substrate 200 is mounted. In the present embodiment, five placement portions 217b are provided so that each of the placement portions 217b is equidistant with respect to the forward clockwise direction (for example, an interval of 72 degrees), and the susceptor 217 is rotated, so that the five placement portions 217b are rotated. The part 217b is rotated together.

(Control part)
The control unit 300 serving as a control unit controls each component described above. That is, the control unit 300 opens and closes the gate valve, transports the substrate by the substrate transfer machine, places the substrate on the susceptor, rotates the susceptor, heats the substrate on the susceptor, controls gas supply and discharge into the processing chamber, plasma Controls start and stop of supply. Further, the control unit 300 may be configured to control the heating degree of the first heating unit 232ah, the second heating unit 232fh, and the third heating unit (heat exchanger) 235g.

(3) Substrate Processing Step Subsequently, as one step of the semiconductor manufacturing process according to the present embodiment, a substrate processing step performed using the processing chamber 202b including the reaction vessel 203 described above will be described with reference to FIGS. I will explain. FIG. 5 is a flowchart showing a substrate processing process according to the present embodiment, and FIG. 6 is a flowchart showing a process on the substrate in the film forming process in the substrate processing process according to the present embodiment. In the following description, the operation of each component of the processing chamber 202 of the substrate processing apparatus 10 is controlled by the control unit 300.

Here, as the first gas, a silicon-containing gas, bistally butylaminosilane (BTBAS) is used, and as the second processing gas, an oxygen gas, which is an oxygen-containing gas, is used, and silicon oxide is formed on the substrate 200 as an insulating film. An example of forming a film (SiO ₂ film, hereinafter also simply referred to as an SiO film) will be described.

(Substrate loading / placement step (S102))
First, the substrate push-up pin 266 is raised to the transfer position of the substrate 200, and the substrate push-up pin 266 is passed through the through hole 217a of the susceptor 217. As a result, the substrate push-up pin 266 is in a state of protruding by a predetermined height from the surface of the susceptor 217. Subsequently, the gate valve 151 is opened, and a predetermined number (for example, five) of substrates 200 (processing substrates) is loaded into the reaction vessel 203 using the first substrate transfer machine 112. Then, the susceptor 217 is placed on the same surface of the susceptor 217 so that the substrates 200 do not overlap with each other about the rotation axis (not shown). Accordingly, the substrate 200 is supported in a horizontal posture on the substrate push-up pins 266 protruding from the surface of the susceptor 217.

  When the substrate 200 is loaded into the reaction vessel 203, the first substrate transfer machine 112 is retracted out of the reaction vessel 203, the gate valve 151 is closed, and the inside of the reaction vessel 203 is sealed. Thereafter, the substrate push-up pin 266 is lowered to place the susceptors 217 on the bottom surfaces of the first processing region 201a, the first purge region 204a, the second processing region 201b, and the second purge region 204b. The substrate 200 is placed on the portion 217b.

When the substrate 200 is carried into the reaction vessel 203, N ₂ gas as a purge gas is supplied from the inert gas supply unit into the reaction vessel 203 while the reaction vessel 203 is exhausted by the exhaust unit. preferable. That is, by operating the vacuum pump 246 and opening the APC valve 243, while exhausting the inside of the reaction vessel 203, at least opening the valve 234 d of the third inert gas supply unit 234, It is preferable to supply _two gases. Thereby, it is possible to suppress intrusion of particles into the processing region 201 and adhesion of particles onto the substrate 200. In parallel, an inert gas may be supplied from the first inert gas supply unit 235 and the second inert gas supply unit 236. The vacuum pump 246 is always operated at least from the substrate loading / mounting step (S102) to the substrate unloading step (S108) described later.

(Temperature / pressure adjustment process (S104))
Subsequently, power is supplied to the heater 218 embedded in the susceptor 217 to heat the surface of the substrate 200 to a predetermined temperature (for example, room temperature to 400 ° C. or lower). At this time, the temperature of the heater 218 is adjusted by controlling the power supply to the heater 218 based on the temperature information detected by the temperature sensor 274.

  Note that in the heat treatment of the substrate 200 made of silicon, if the surface temperature is heated to 750 ° C. or higher, impurities are diffused in a source region, a drain region, or the like formed on the surface of the substrate 200, so that circuit characteristics deteriorate. However, the performance of the semiconductor device may be degraded. By limiting the temperature of the substrate 200 as described above, diffusion of impurities in the source region and drain region formed on the surface of the substrate 200, deterioration in circuit characteristics, and reduction in performance of the semiconductor device can be suppressed.

  Further, the inside of the reaction vessel 203 is evacuated by a vacuum pump 246 so that the inside of the reaction vessel 203 has a desired pressure (for example, 0.1 Pa to 1000 Pa, preferably 100 to 500 Pa). At this time, the pressure in the reaction vessel 203 is measured by a pressure sensor (not shown), and the opening degree of the APC valve 243 is feedback controlled based on the measured pressure information.

  Further, while the substrate 200 is heated, the rotation mechanism 267 is operated to start the rotation of the susceptor 217. At this time, the rotation speed of the susceptor 217 is controlled by the controller 300. The rotation speed of the susceptor 217 is changed depending on conditions, for example, 1 to 60 rotations / second. By rotating the susceptor 217, the substrate 200 starts moving in the order of the first processing region 201a, the first purge region 204a, the second processing region 201b, and the second purge region 204b. 200 passes.

(Film formation process (S106))
Next, BTBAS gas as the first processing gas is supplied into the first processing region 201a, and oxygen gas as the second processing gas is supplied into the second processing region 201b. The film forming process will be described by taking the process of forming the SiO film as an example. In the following description, BTBAS gas, oxygen gas, and inert gas are supplied in parallel to each region.

When the substrate 200 is heated to reach a desired temperature and the susceptor 217 reaches a desired rotational speed, at least the valves 232d, 233d, 234d, and 235d are simultaneously opened to treat the processing region 201 and purge of the processing gas and the inert gas. Supply to area 204 is started. That is, the valves 232d and 235d are opened, the BTBAS gas diluted with the heated N ₂ gas is supplied into the first processing region 201a, the valve 233d is opened, and the oxygen gas is supplied into the second processing region 201b. The processing gas is supplied from the processing gas supply unit. Further, the inert gas is supplied from the inert gas supply unit by opening the valve 234d and supplying the N ₂ gas which is an inert gas into the first purge region 204a and the second purge region 204b. At this time, the APC valve 243 is appropriately adjusted so that the pressure in the reaction vessel 203 is, for example, in the range of 100 to 500 Pa. At this time, the temperature of the heater 218 is set to such a temperature that the temperature of the substrate 200 becomes a temperature within a range of 200 ° C. to 400 ° C., for example.

Specifically, the valve 232d is opened, and the first process gas supply pipe 232f is connected to the first gas supply pipe 232a, the first process gas introduction part 251 and the first gas jet outlet 254, through the first gas supply pipe 232a. While supplying BTBAS gas to one processing region 201a, the exhaust pipe 231 is exhausted. At this time, the mass flow controller 232c is adjusted so that the flow rate of the BTBAS gas becomes a predetermined flow rate. It is controlled by the mass flow controller 232c. The supply flow rate of the BTBAS gas is set to a flow rate in the range of 100 sccm to 5000 sccm, for example.
At this time, the first processing gas flowing in the first processing gas supply pipe 232f is heated to, for example, 60 ° C. by the second heating unit 232fh. Further, the first gas flowing through the first gas supply pipe 232a is heated to, for example, 120 ° C. by the first heating unit 232ah.

When supplying the BTBAS gas into the first processing region 201a, as described above, the valve 235d is opened, and the N ₂ gas as the carrier gas or dilution gas is supplied from the first inert gas supply pipe 235a to the first. In the processing area 201a. Thereby, supply of BTBAS gas into the 1st processing field 201a can be promoted. In this way, a silicon-containing layer is formed on the substrate. At this time, as described above, the N ₂ gas in the first inert gas supply pipe 235a is heated and supplied to, for example, 120 ° C. by the heat exchanger 235g. This prevents the BTBAS gas from being cooled and liquefied when the N ₂ gas is mixed with the BTBAS gas from the first processing gas supply pipe 232f, and further suppresses the film thickness unevenness of the silicon-containing layer. To do.

  Further, the exhaust pipe is opened while the valve 233d is opened and oxygen gas is supplied from the second gas supply pipe 233a to the second processing region 201b through the second processing gas inlet 252 and the second gas outlet 255. Exhaust from 231. At this time, the mass flow controller 233c is adjusted so that the flow rate of the oxygen gas becomes a predetermined flow rate. Note that the supply flow rate of the oxygen gas controlled by the mass flow controller 233c is, for example, a flow rate in the range of 1000 sccm to 10000 sccm.

When supplying oxygen gas into the second processing region 201b, the valve 236d is opened, and N ₂ gas as carrier gas or dilution gas is supplied from the second inert gas supply pipe 236a into the second processing region 201b. It is preferable to supply to. Thereby, supply of oxygen gas into the second processing region 201b can be promoted.

Further, the valve 234d is opened, and N ₂ gas, which is an inert gas as a purge gas, is supplied from the third inert gas supply pipe 234a to the inert gas inlet 253, the first inert gas outlet 256, and the second gas. The exhaust gas is exhausted while being supplied to the first purge region 204a and the second purge region 204b through the inert gas outlet 257, respectively. At this time, the mass flow controller 234c is adjusted so that the flow rate of the N ₂ gas becomes a predetermined flow rate. Note that, through the gap between the end portion of the partition plate 205 and the side wall of the reaction vessel 203, the first processing region 201a and the second processing region 201b from the first purge region 204a and the second purge region 204b. By injecting the inert gas toward the inside, it is possible to suppress intrusion of the processing gas into the first purge region 204a and the second purge region 204b.

  With the start of gas supply, high-frequency power is supplied from a high-frequency power source (not shown) to the plasma generation unit 206 provided above the second processing region 201b. The oxygen gas that has been supplied into the second processing region 201b and passed below the plasma generation unit 206 is in a plasma state in the second processing region 201b, and the active species contained therein are supplied to the substrate 200.

Oxygen gas has a high reaction temperature, and it is difficult to react at the processing temperature of the substrate 200 and the pressure in the reaction vessel 203 as described above. However, as in this embodiment, the oxygen gas is brought into a plasma state, and the active species contained therein are changed. When supplied to the substrate 200, for example, the film forming process can be performed even in a temperature range of 400 ° C. or lower.
When the required processing temperature is different between the first processing gas and the second processing gas, it is necessary to increase the processing temperature by controlling the heater 218 in accordance with the temperature of the processing gas having the lower processing temperature. The other processing gas may be supplied in a plasma state. By using plasma in this way, the substrate 200 can be processed at a low temperature, and for example, thermal damage to the substrate 200 having a wiring weak to heat such as aluminum can be suppressed. In addition, generation of foreign substances such as products due to incomplete reaction of the processing gas can be suppressed, and the uniformity and withstand voltage characteristics of the thin film formed on the substrate 200 can be improved. In addition, productivity of substrate processing can be improved, for example, the oxidation processing time can be shortened by the high oxidizing power of oxygen gas in a plasma state.
When the temperature of the first processing gas is higher than that of the second processing gas, at least one of the first heating unit 232ah, the second heating unit 232fh, and the third heating unit (heat exchanger) 235g. You may comprise so that the heating temperature of a heating part may be adjusted.

As described above, by rotating the susceptor 217, the substrate 200 repeats moving in the order of the first processing region 201a, the first purge region 204a, the second processing region 201b, and the second purge region 204b. Therefore, as shown in FIG. 6, the substrate 200 is alternately supplied with BTBAS gas, N ₂ gas (purge), plasma oxygen gas, and N 2 gas (purge) alternately a predetermined number of times. Will be implemented. Here, the details of the film forming process sequence will be described with reference to FIG.

(First process gas region passage (S202))
First, the BTBAS gas is supplied together with the heated N ₂ gas to the surface of the substrate 200 that has passed through the first processing region 201 a, and a silicon-containing layer is formed on the substrate 200.

(First purge region passage (S204))
Next, the substrate 200 on which the silicon-containing layer is formed passes through the first purge region 204a. At this time, N ₂ gas that is an inert gas is supplied to the substrate 200 that passes through the first purge region 204a.

(Second process gas region passage (S206))
Next, oxygen gas is supplied to the substrate 200 that has passed through the second processing region 201 b, and a silicon oxide layer (SiO layer) is formed on the substrate 200. That is, the oxygen gas reacts with at least a part of the silicon-containing layer formed on the substrate 200 in the first processing region 201a. As a result, the silicon-containing layer is oxidized and modified into a SiO layer containing silicon and oxygen.

(Second purge region passage (S208))
Then, the substrate 200 on which the SiO layer is formed in the second processing region 201b passes through the second purge region 204b. At this time, N ₂ gas, which is an inert gas, is supplied to the substrate 200 that passes through the second purge region 204b.

(Check number of cycles (S210))
In this way, one rotation of the susceptor 217 is defined as one cycle, that is, one cycle passes through the substrate 200 through the first processing region 201a, the first purge region 204a, the second processing region 201b, and the second purge region 204b. By performing this cycle at least once, a SiO film having a predetermined thickness can be formed on the substrate 200.
Here, it is confirmed whether or not the above-described cycle has been performed a predetermined number of times.
When the cycle is performed a predetermined number of times, it is determined that the desired film thickness has been reached, and the film forming process is terminated. If the cycle has not been performed a predetermined number of times, that is, it is determined that the desired film thickness has not been reached, the process returns to S202 and the cycle process continues.

  In S210, the above-described cycle is performed a predetermined number of times, and after determining that the SiO film having a desired film thickness is formed on the substrate 200, at least the valve 232d and the valve 233d are closed, and the first BTBAS gas and oxygen gas Supply to the processing area 201a and the second processing area 201b is stopped. At this time, power supply to the plasma generation unit 206 is also stopped. Further, the energization amount of the heater 218 is controlled to lower the temperature, or the energization to the heater 218 is stopped. Or it controls to maintain heater temperature. Further, the rotation of the susceptor 217 is stopped.

(Substrate unloading step (S108))
When the film forming step 106 is completed, the substrate is unloaded as follows.
First, the substrate push-up pins 266 are raised, and the substrate 200 is supported on the substrate push-up pins 266 that protrude from the surface of the susceptor 217. Then, the gate valve 151 is opened, the substrate 200 is carried out of the reaction vessel 203 using the first substrate transfer machine 112, and the substrate processing step according to this embodiment is completed. In the above, the temperature of the substrate 200, the pressure in the reaction vessel 203, the flow rate of each gas, the power applied to the plasma generation unit 206, the processing time, the heating temperature of the first heating unit 232ah, the heating of the second heating unit 232fh The conditions such as the temperature and the heating temperature of the third heating unit (heat exchanger) 235 g are arbitrarily adjusted according to the material and film thickness of the film to be modified.

FIG. 7 is a diagram showing the relationship between the temperature of the raw material dilution gas and the film thickness uniformity according to the present embodiment. That is, it is a diagram showing the relationship between the temperature of the dilution gas flowing through the first inert gas supply pipe 235a and the film thickness uniformity. Specifically, in the oxide film formation, changes in the film thickness and the in-plane uniformity of the film thickness when the temperature of the dilution gas is changed by the heat exchanger 235g are shown.
In FIG. 7, the left vertical axis represents the thickness of the oxide film deposited on the substrate 200. The right vertical axis is the relative ratio of the in-plane uniformity of film thickness. The horizontal axis represents the temperature of the raw material dilution gas.

In the example of FIG. 7, BTBAS is used as the source gas (first processing gas), and N ₂ gas is used as the source dilution gas or carrier gas. At that time, the temperature of the BTBAS gas in the first process gas supply pipe 232f is 40 ° C., and the temperature of the N ₂ gas in the first inert gas supply pipe 235a is from 40 ° C. to the heat resistant temperature of the heat exchanger 235g. The temperature was changed to 200 ° C. Further, as the active species gas (second processing gas), a plasma-excited O ₂ gas was used, and N ₂ gas was used in the purge region to form a film. Since the flow rate of the raw material dilution gas in this case is much larger than the flow rate of the raw material gas, the temperature of the raw material dilution gas and the temperature of the first gas flowing in the first gas supply pipe 232a are: It is almost the same.

  As shown in FIG. 7, when only the raw material dilution gas temperature is changed by the heat exchanger 235g without changing other conditions, the film thicknesses are almost the same. However, with respect to the in-plane film thickness uniformity, by setting the raw material dilution gas temperature to 120 ° C. or higher compared to the case of the raw material dilution gas temperature of 40 ° C. (the uniformity at this time is 1.0) It was confirmed that the property was 0.44 and improved significantly. In this case, the film thickness in-plane uniformity indicates the magnitude of the film thickness variation in the substrate surface. That is, the smaller the numerical value of the film thickness in-plane uniformity, the better the uniformity.

  The reason why the in-plane uniformity of the film thickness can be greatly improved is considered as follows. That is, the temperature of the first gas flowing in the first gas supply pipe 232a can be increased by increasing the carrier gas temperature of the source gas. As a result, in the first processing region 201a, the unevenness of the film thickness of the silicon-containing layer on the substrate surface was suppressed, that is, the uniformity of the supply amount (attached amount) of BTBAS gas to the substrate surface was improved. it is conceivable that. In general, in the substrate processing method in the present embodiment, the film thickness uniformity of the film formed on the substrate depends on the film thickness uniformity of the film mainly composed of the source gas (here, the silicon-containing layer). . Therefore, in this embodiment, the in-plane uniformity of the film formed on the substrate can be improved.

(4) Effects according to the present embodiment According to the present embodiment, at least the following effects are provided.
(A) Since the gas heating unit for heating the first gas flowing in the first gas supply pipe for supplying the source gas to the source gas introduction region is provided, the layer mainly includes the source gas formed on the substrate. The film thickness unevenness of the film can be suppressed, and as a result, the in-plane uniformity of the film formed on the substrate can be improved.
(B) Since the inert gas heating section (third heating section) is provided in the inert gas supply pipe connected to the first gas supply pipe, the inert gas flowing from the inert gas supply pipe to the first gas supply pipe The temperature can be increased. As a result, liquefaction of the raw material gas when combined with the inert gas can be prevented, and unevenness in the thickness of the layer mainly composed of the raw material gas formed on the substrate can be suppressed.
(C) A processing gas heating unit (second heating unit) is provided in the source gas supply pipe connected upstream of the first gas supply pipe, and the first gas heating unit (first heating unit) is provided in the first gas supply pipe. And the first gas heating section that heats the gas in the first gas supply pipe having a lower pressure is heated at a temperature higher than the processing gas heating section that heats the gas in the source gas supply pipe having a higher pressure. Therefore, it is not necessary to raise the temperature more than necessary in the processing gas heating section. Further, the process gas heating unit prevents liquefaction of the source gas, and the first gas heating unit prevents liquefaction of the source gas and suppresses the film thickness unevenness of the layer mainly composed of the source gas formed on the substrate. be able to.
(D) By increasing the temperature of the source gas supplied to the source gas introduction region, it is possible to increase the energy state on the substrate surface without increasing the substrate temperature on the susceptor. Therefore, the thermal budget of the substrate can be reduced.
(E) The temperature of the source gas supplied to the source gas introduction region can be changed only by changing the heating temperature of the inert gas heating unit. Therefore, without changing the raw material supply temperature and supply amount, and without changing the substrate processing environment such as the pressure in the processing chamber and the susceptor temperature, it is only necessary to change the heating temperature of the inert gas heating unit. It is possible to improve the in-plane uniformity.
(F) A source gas is supplied to a source gas introduction region in a substrate processing apparatus that has a plurality of processing regions, supplies a processing gas to each processing region, and rotates a susceptor on which a plurality of substrates are mounted. Since the gas heating unit for heating the first gas flowing in the first gas supply pipe is provided, it is difficult to adjust the pressure individually for each processing region, in the film formed on the substrate Unevenness of the film thickness can be suppressed, and the film thickness in-plane uniformity can be improved.

<Other Embodiments of the Present Invention>
As mentioned above, although embodiment of this invention was described concretely, this invention is not limited to the above-mentioned embodiment, It can change variously in the range which does not deviate from the summary.

  For example, in the above-described embodiment, the heater is used as the first heating unit and the second heating unit, and the heat exchanger is used as the third heating unit. However, the present invention is not limited to this. Any gas can be used as long as the gas can be heated to a predetermined temperature.

  Moreover, in the above-mentioned embodiment, the 1st heating part covered so that the whole 1st gas supply pipe | tube 232a might be covered, and the 2nd heating part covered so that the whole 1st process gas supply pipe | tube 232f might be covered. However, depending on the situation, the first heating unit covers to cover a part of the first gas supply pipe 232a, and the second heating unit covers to cover a part of the first process gas supply pipe 232f. It can also comprise.

  In the above-described embodiment, oxygen gas is supplied to the processing chamber, and plasma is generated by the plasma generation unit 206. However, the present invention is not limited thereto, and a remote plasma method for generating plasma outside the processing chamber, Ozone with a high energy level may be used.

  In the above-described embodiment, the inert gas introduction unit 253 of the gas introduction unit 250 is common to the first purge region 204a and the second purge region 204b. However, the inert gas introduction unit is provided separately. May be.

  In the above-described embodiment, the substrate push-up pins 266 are moved up and down to move the substrate 200 to the processing position and the transfer position. However, the substrate 200 is moved to the processing position by moving the susceptor 217 up and down using the lifting mechanism 268. Or may be moved to the transport position.

In the above-described embodiment, a silicon-containing gas and an oxygen-containing gas are used as the processing gas and the SiO film is formed on the substrate 200. However, the present invention is not limited to this. That is, for example, a hafnium oxide film (HfO film) using a hafnium (Hf) -containing gas and an oxygen-containing gas, a zirconium (Zr) -containing gas and an oxygen-containing gas, a titanium (Ti) -containing gas, and an oxygen-containing gas as the processing gas. Alternatively, a high-k film such as zirconium oxide (ZrO film) or titanium oxide film (TiO film) may be formed on the substrate 200. In addition to the oxygen-containing gas, ammonia (NH ₃ ) gas, which is a nitrogen (N) -containing gas, or the like may be used as the processing gas to be converted into plasma.

Below, the aspect of this invention is described as an appendix.
<Appendix 1>
A processing chamber for processing a substrate, wherein the processing chamber is divided into a plurality of gas introduction regions including a first gas introduction region into which the first gas is introduced by the divided structure;
A substrate mounting table provided in the processing chamber, the substrate mounting table having a mounting surface on which a plurality of substrates are mounted concentrically;
A rotation mechanism for rotating the substrate mounting table in a direction parallel to the mounting surface;
A first gas supply unit having a first gas supply pipe for supplying the first gas to the first gas introduction region, and a gas heating unit for heating the first gas;
An exhaust unit for exhausting the gas supplied from the first gas supply unit from the processing chamber;
A substrate processing apparatus.

<Appendix 2>
The first gas supply unit is connected to the first gas supply pipe and connected to the first gas supply pipe to supply a first processing gas to the first gas supply pipe; and the first gas supply An inert gas supply pipe connected to a pipe for supplying an inert gas to the first gas supply pipe,
The substrate processing apparatus according to claim 1, wherein the gas heating unit includes an inert gas heating unit that is provided in the inert gas supply pipe and heats the inert gas in the inert gas supply pipe.

<Appendix 3>
A processing gas heating unit for heating the first processing gas in the first processing gas supply pipe is provided in the first processing gas supply pipe, and the first gas is supplied to the first gas supply pipe. A first gas heating unit for heating the first gas in the supply pipe is provided;
The gas heating unit includes the first gas heating unit and the inert gas heating unit,
The substrate processing apparatus according to claim 2, wherein the first gas heating unit heats the first gas at a temperature higher than that of the processing gas heating unit.

<Appendix 4>
When forming an oxide film, as the first processing gas, an Si-based gas containing TSA (trisilylamine), which is a gas source of Si source, and BTBAS (Bisteria butylaminosilane) or 3DMAS (Trisdimethyl) are used. The substrate processing apparatus according to supplementary note 2 or supplementary note 3, wherein an organic aminosilane-based gas containing aminosilane) and a silane chlorinated product containing DCS (dichlorosilane) or HCDS (hexachlorodisilane) are used.

<Appendix 5>
A processing chamber for processing a substrate, wherein the processing chamber is divided into a plurality of gas introduction regions including a first gas introduction region into which the first gas is introduced by the divided structure;
A substrate mounting table provided in the processing chamber, the substrate mounting table having a mounting surface on which a plurality of substrates are mounted concentrically;
A first gas supply section having a first gas supply pipe for supplying the first gas to the first gas introduction region and a gas heating section for heating the first gas; A method of manufacturing a semiconductor device using a substrate processing apparatus,
A substrate mounting step of concentrically mounting a plurality of substrates on the substrate mounting table;
The first gas is heated from the first gas supply pipe by rotating the substrate mounting table on which the plurality of substrates are mounted in a direction parallel to the mounting surface, and from the first gas supply pipe. A substrate processing step of supplying a gas introduction region of 1 and processing a plurality of substrates mounted on the substrate mounting table;
A substrate unloading step of unloading the substrate processed in the substrate processing step from the processing chamber;
A method for manufacturing a semiconductor device comprising:

<Appendix 6>
A process chamber dividing step of dividing a processing chamber for processing a substrate into a plurality of gas introduction regions including a first gas introduction region into which a first gas is introduced;
A substrate placement step of placing a plurality of substrates on a substrate placement table provided in the processing chamber and having a placement surface on which the plurality of substrates are placed concentrically;
While rotating the substrate mounting table on which the plurality of substrates are mounted in a direction parallel to the mounting surface, the first gas is heated and introduced into the first gas introduction region, and the substrate mounting table A substrate processing step for processing a plurality of substrates placed on the substrate;
A substrate unloading step of unloading the substrate processed in the substrate processing step from the processing chamber;
A method for manufacturing a semiconductor device comprising:

  10 .... Substrate processing apparatus, 100 ... pod, 100a ... cap, 101 ... first transfer chamber housing, 103 ... first transfer chamber, 105 ... load port (I / O stage), 106 .. Notch aligning device 108 .. Pod opener 112.. First substrate transfer machine 115 115 First substrate transfer machine elevator 118 118 Clean unit 121 Second transfer chamber 122, 123 ··· Preliminary chamber, 124 ··· Second substrate transfer machine, 125 · · Second transfer chamber housing, 126, 127 · · Gate valve, 128, 129 · · Gate valve, 131 ··· Second substrate transfer machine elevator, 132 ... Linear actuator, 134 ... Substrate loading / unloading port, 136 ... Drive mechanism, 140 ... Substrate support base, 141 ... Bulkhead plate, 142 ... Closure, 150, 151 152, 153... Gate valve, 200... Substrate, 201 a... First processing region, 201 b... Second processing region, 202 a .. First processing chamber, 202 b. ··· Third processing chamber, 202d · · · Fourth processing chamber, 203 · · Reaction vessel, 203a · · Reaction vessel ceiling, 204a · · First purge region, 204b · · Second purge region, 205 · · .. Partition plate 206 .. Plasma generation unit 207 .. Processing space 217 .. Susceptor (substrate mounting table) 217 a .. Through hole 217 b .. Substrate mounting unit 218 .. Heater 222. Supply line, 223 ... Temperature regulator, 224 ... Power regulator, 225 ... Heater power supply, 231 ... Exhaust pipe, 232 ... First process gas supply unit, 232a ... First gas supply pipe, 232ah ... First heating (First gas heating section) 232b ... Raw material gas supply source, 232c ... MFC, 232d, valve, 232f, first processing gas supply pipe, 232fh, second heating section (processing gas heating section) 233 ··· Second processing gas supply unit, 233a · · Second gas supply pipe, 233b · · Reaction gas supply source, 233c · · MFC, 233d · · valve, 234 · · · third inert gas Supply unit 234a, third inert gas supply pipe, 234b, inert gas supply source, 234c, MFC, 234d, valve, 235, first inert gas supply unit, 235a, second One inert gas supply pipe, 235b .. inert gas supply source, 235c .. MFC, 235d .. valve, 235g .. heat exchanger (third heating section, inert gas heating section), 236. A second inert gas supply, 236a, second inert gas supply pipe, 236b, inert gas supply source, 236c, MFC, 236d, valve, 243, APC valve, 245, flow control valve, 246, vacuum pump, 250 ·· Gas introduction portion, 251 ·· First treatment gas introduction portion, 252 ·· Second treatment gas introduction portion, 253 ·· Inert gas introduction portion, 254 ·· First gas outlet, 255 · Second gas outlet 256, First inert gas outlet 257, Second inert gas outlet 266, Substrate push-up pin 267, Rotating mechanism 267a, Coupling Parts, 268... Elevating mechanism, 274 .. Temperature sensor, 300 .. Control part (controller).

Claims (4)

A processing chamber for processing a substrate, wherein the processing chamber is divided into a plurality of gas introduction regions including a first gas introduction region into which the first gas is introduced by the divided structure;
A substrate mounting table provided in the processing chamber, the substrate mounting table having a mounting surface on which a plurality of substrates are mounted concentrically;
A rotation mechanism for rotating the substrate mounting table in a direction parallel to the mounting surface;
A first gas supply unit having a first gas supply pipe for supplying the first gas to the first gas introduction region, and a gas heating unit for heating the first gas;
An exhaust unit for exhausting the gas supplied from the first gas supply unit from the processing chamber;
A substrate processing apparatus. The first gas supply unit is connected to the first gas supply pipe and connected to the first gas supply pipe to supply a first processing gas to the first gas supply pipe; and the first gas supply An inert gas supply pipe connected to a pipe for supplying an inert gas to the first gas supply pipe,
The substrate processing apparatus according to claim 1, wherein the gas heating unit includes an inert gas heating unit that is provided in the inert gas supply pipe and heats the inert gas in the inert gas supply pipe. A processing gas heating unit for heating the first processing gas in the first processing gas supply pipe is provided in the first processing gas supply pipe, and the first gas is supplied to the first gas supply pipe. A first gas heating unit for heating the first gas in the supply pipe is provided;
The gas heating unit includes the first gas heating unit and the inert gas heating unit,
The substrate processing apparatus according to claim 2, wherein the first gas heating unit heats the first gas at a temperature higher than that of the processing gas heating unit. A process chamber dividing step of dividing a processing chamber for processing a substrate into a plurality of gas introduction regions including a first gas introduction region into which a first gas is introduced;
A substrate placement step of placing a plurality of substrates on a substrate placement table provided in the processing chamber and having a placement surface on which the plurality of substrates are placed concentrically;
While rotating the substrate mounting table on which the plurality of substrates are mounted in a direction parallel to the mounting surface, the first gas is heated and introduced into the first gas introduction region, and the substrate mounting table A substrate processing step for processing a plurality of substrates placed on the substrate;
A substrate unloading step of unloading the substrate processed in the substrate processing step from the processing chamber;
A method for manufacturing a semiconductor device comprising:

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