JP2017034013A - Substrate processing apparatus, semiconductor device manufacturing method and program - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent a process gas from moving to another processing region.SOLUTION: A substrate processing apparatus comprises: a processing chamber for processing a substrate; a substrate placement table provided in the processing chamber; a rotary drive part for rotating the substrate placement table; substrate placement parts which are arranged around a rotation center of the substrate placement table, on which substrates are placed; an inert gas introduction part for introducing an inert gas into the processing chamber; a process gas introduction part for introducing a process gas into the processing chamber; a first exhaustion part which partitions the processing chamber into an inert gas introduction region to which the inert gas is introduced and a process gas introduction region to which the process gas is introduced, is provided above the substrate placement table so as to extend in a radial direction of the substrate placement table, and has first exhaust holes on lateral faces of the process gas introduction region side; ad a second exhaustion part which is provided on a periphery of the substrate placement table and has second exhaust holes on a top face.SELECTED DRAWING: Figure 10

Description

  The present invention relates to a substrate processing apparatus, a semiconductor device manufacturing method, and a program.

  For example, a substrate processing step of forming a thin film on a substrate may be performed as one step of a manufacturing process of a semiconductor device such as a flash memory or a DRAM (Dynamic Random Access Memory). As a substrate processing apparatus for performing such a process, a plurality of processing regions (reaction cells) are provided on a susceptor, each processing gas is partitioned, accommodated and retained in the processing region, and processing on the substrate is sequentially performed in each processing region. Thus, a thin film deposition apparatus including a reaction chamber for forming a thin film on a substrate is known (see, for example, Patent Document 1).

JP 2014-175383 A

  In such a processing region, the stored processing gas may move to some other adjacent processing region. When the reaction gas moves, a plurality of types of reaction gas are mixed, so that the processing performed in each processing region cannot be performed with high accuracy. Therefore, it is necessary to suppress the movement of such a gas to another processing region.

  However, the substrate processing apparatus having the above-described conventional configuration has problems such as insufficient improvement in exhaust efficiency because the exhaust hole is formed in a narrow space facing the susceptor.

  An object of the present invention is to solve the above problems and provide a configuration capable of suppressing the processing gas from moving to another processing region.

  According to one aspect of the present invention, a processing chamber for processing a substrate, a substrate mounting table provided in the processing chamber, a rotation driving unit that rotates the substrate mounting table, and an upper surface of the substrate mounting table are provided. A substrate mounting portion on which the substrate placed around the rotation center of the substrate mounting table is placed; an inert gas introduction portion for introducing an inert gas into the processing chamber; and A processing gas introduction section for introducing a processing gas, an inert gas introduction region into which the inert gas is introduced, and a processing gas introduction region into which the processing gas is introduced into the processing chamber, and the radial direction of the substrate mounting table A first exhaust part having a first exhaust hole on a side surface on the side of the processing gas introduction region, and an outer peripheral part of the substrate stage. And a second exhaust part having a second exhaust hole. Configuration is provided that.

  According to said structure, it can suppress that process gas moves to another process area | region.

1 is a schematic top view of a substrate processing apparatus according to a first embodiment of the present invention. 1 is a schematic longitudinal sectional view of a substrate processing apparatus according to a first embodiment of the present invention. 1 is a schematic cross-sectional view of a processing chamber according to a first embodiment of the present invention. FIG. 4 is a cross-sectional view taken along the line AA of the processing chamber shown in FIG. FIG. 4 is a cross-sectional view of the processing chamber shown in FIG. It is explanatory drawing of the gas introduction part which concerns on 1st Embodiment of this invention. It is explanatory drawing (top view) of the exhaust duct which concerns on 1st Embodiment of this invention. It is explanatory drawing (longitudinal sectional drawing) of the exhaust duct which concerns on 1st Embodiment of this invention. It is explanatory drawing (perspective view) of the 1st exhaust part (exhaust piping) which concerns on 1st Embodiment of this invention. It is explanatory drawing (perspective view) of the exhaust duct which concerns on 1st Embodiment of this invention. It is explanatory drawing (longitudinal sectional drawing) around the connection part of the exhaust duct which concerns on 1st Embodiment of this invention. It is a schematic block diagram of the controller of the substrate processing apparatus which concerns on 1st Embodiment of this invention. It is a flowchart explaining the substrate processing process which concerns on 1st Embodiment of this invention. It is a flowchart explaining the film-forming process which concerns on 1st Embodiment of this invention. It is explanatory drawing (longitudinal sectional drawing) of the gas introduction part and exhaust duct which concern on 1st Embodiment of this invention. It is explanatory drawing (top view) of the gas introduction part which concerns on 1st Embodiment of this invention, and an exhaust duct. It is explanatory drawing (top view) of the exhaust duct which concerns on 2nd Embodiment of this invention.

<First Embodiment>
(1) Configuration of Substrate Processing Apparatus First, the configuration of the substrate processing apparatus according to the first embodiment of the present invention will be described with reference to FIGS. 1 and 2. FIG. 1 is a schematic top view of a multi-wafer type substrate processing apparatus 10 according to the first embodiment. FIG. 2 is a schematic longitudinal sectional view of the substrate processing apparatus according to the first embodiment.

In the substrate processing apparatus according to the first embodiment, a FOUP (Front Opening Unified Pod, hereinafter referred to as a pod) is used as a carrier for transporting a substrate such as the processing substrate 200 as a product. In the following description, front, rear, left and right are based on FIG. In other words, the X ₁ direction shown in FIG. 1 is the right, the X ₂ direction is the left, the Y ₁ direction is the front, and the Y ₂ direction is the back.

  As shown in FIGS. 1 and 2, the substrate processing apparatus includes a first transfer chamber 103 having a load lock chamber structure. A first substrate transfer machine 112 for transferring the substrate 200 is installed in the first transfer chamber 103.

  Of the five side walls of the casing 101, two side walls located on the front side are provided with spare chambers 122 and 123 in which a spare chamber for loading and a spare chamber for unloading can be used in combination with gate valves 126 and 127, respectively. Are connected through. Furthermore, two substrates 200 can be stacked in the reserve chambers (load lock chambers) 122 and 123 by the substrate support stand 140.

  A second transfer chamber 121 used at substantially atmospheric pressure is connected to the front side of the preliminary chamber 122 and the preliminary chamber 123 via gate valves 128 and 129. A second substrate transfer machine 124 for transferring the substrate 200 is installed in the second transfer chamber 121. The second substrate transfer machine 124 is configured to be moved up and down by a second substrate transfer machine elevator 131 installed in the second transfer chamber 121 and is reciprocated in the left-right direction by a linear actuator 132. It is comprised so that.

  As shown in FIG. 1, a notch or orientation flat aligning device 106 can be installed on the left side of the second transfer chamber 121. Further, as shown in FIG. 2, a clean unit 118 for supplying clean air is installed in the upper part of the second transfer chamber 121.

  As shown in FIGS. 1 and 2, on the front side of the casing 125 of the second transfer chamber 121, a substrate loading / unloading port 134 for loading and unloading the substrate 200 to and from the second transfer chamber 121. A pod opener 108 is installed. A load port (IO stage) 105 is installed on the opposite side of the pod opener 108 across the substrate loading / unloading port 134, that is, on the outside of the housing 125. The pod opener 108 includes a closure 142 that can open and close the cap 100 a of the pod 100 and close the substrate loading / unloading port 134, and a drive mechanism 136 that drives the closure 142, and the pod placed on the load port 105. By opening and closing the cap 100a of 100, the substrate 200 can be taken in and out of the pod 100.

  As shown in FIG. 1, the first transfer chamber casing 101 includes a first processing chamber 202a for performing a desired process on the substrate, a second processing chamber 202b, a third processing chamber 202c, The fourth processing chamber 202d is connected adjacently via gate valves 150, 151, 152, and 153, respectively.

  Hereinafter, processing steps using the substrate processing apparatus having the above-described configuration will be described. The following control is controlled by a controller 300 as a control unit as shown in FIG. 1 and FIG. The controller 300 controls the entire apparatus in the above configuration.

  As shown in FIG. 1 and FIG. 2, the pod 100 that has been transported is delivered and placed on the load port 105 from the in-process transport device. After the pod 100 is opened by the pod opener 108, the second substrate transfer machine 124 picks up the substrate 200 from the pod 100, loads the substrate 200 into the spare chamber 122, and transfers the substrate 200 to the substrate support 140. Included. When the transfer is completed, the gate valve 128 is closed, and the preliminary chamber 122 is exhausted to a negative pressure by an exhaust device (not shown).

  When the pressure in the preliminary chamber 122 reaches a preset pressure value, the gate valve 126 is opened, and the preliminary chamber 122 and the first transfer chamber 103 communicate with each other. Subsequently, the first substrate transfer machine 112 in the first transfer chamber 103 loads the substrate 200 from the substrate support 140 into the first transfer chamber 103. After the gate valve 126 is closed, the gate valve 151 is opened, and the first transfer chamber 103 and the second processing chamber 202b are communicated with each other. After the gate valve 151 is closed, a processing gas is supplied into the second processing chamber 202b, and a desired process is performed on the substrate 200.

  When the processing on the substrate 200 is completed in the second processing chamber 202b, the gate valve 151 is opened, and the substrate 200 is carried out to the first transfer chamber 103 by the first substrate transfer machine 112.

  Subsequently, the gate valve 127 is opened, and the first substrate transfer machine 112 transports the substrate 200 unloaded from the second processing chamber 202b to the substrate support 140 in the preliminary chamber 123, and the processed substrate 200 is cooled. Is done. When the processed substrate 200 is transferred to the preliminary chamber 123 and a preset cooling time has elapsed, the preliminary chamber 123 is returned to approximately atmospheric pressure by the inert gas. Subsequently, when the gate valve 129 is opened, the second substrate transfer device 124 in the second transfer chamber 121 carries the substrate 200 out of the substrate support base 140 into the second transfer chamber 121 and stores it in the pod 100.

  The above operation has been described by taking the case where the second processing chamber 202b and the spare chambers 122 and 123 are used as an example. However, the first processing chamber 202a, the third processing chamber 202c, and the fourth processing chamber 202d The same operation is performed when used.

(2) Configuration of Processing Chamber Subsequently, the configuration of the processing chamber 202 according to the first embodiment will be described mainly with reference to FIGS. This processing chamber 202 is, for example, the first processing chamber 202b described above.

(Reaction vessel)
As shown in FIGS. 3 to 4, the reaction vessel 203 is configured to be hermetically sealed by a reaction vessel ceiling 203 a as a lid and a reaction vessel body 203 b as a processing vessel that is a cylindrical vessel. . A processing space 207 for the substrate 200 is formed in the reaction vessel 203. On the upper side of the processing space 207 in the reaction vessel 203, first exhaust pipes 20 and 22 are provided as first exhaust parts extending radially from the center. Two sets (four) of first exhaust pipes 20 and 22 are provided alternately at intervals of 90 degrees, for example. The two sets of first exhaust pipes 20 and 22 are attached to the reaction vessel ceiling 203a. The two sets of first exhaust pipes 20 and 22 divide the processing space 207 into four regions, that is, a first processing region 201a, a first purge region 204a, a second processing region 201b, and a second purge region 204b. It is comprised so that it may partition and partition. In other words, the processing area and the purge area are arranged adjacent to each other. Note that the first processing region 201a, the first purge region 204a, the second processing region 201b, and the second purge region 204b are the rotation direction of the susceptor 217 as a substrate mounting table (arrow R in FIG. 3) described later. Are arranged in this order. As described above, the first exhaust pipes 20 and 22 are divided structures that divide the inside of the processing chamber 202 into a processing gas introduction region into which the processing gas is introduced and an inert gas introduction region into which the inert gas is introduced. Also used as The first exhaust pipes 20 and 22 are made of a material such as aluminum or quartz, for example.

  As will be described later, by rotating the susceptor 217, the substrate 200 placed on the susceptor 217 has a first processing region 201a, a first purge region 204a, a second processing region 201b, and a second purge. It moves in the order of the area 204b. As will be described later, the first processing gas as the first gas is supplied into the first processing region 201a, and the second processing as the second gas is supplied into the second processing region 201b. A gas is supplied, and an inert gas is supplied into the first purge region 204a and the second purge region 204b. Therefore, by rotating the susceptor 217, the first processing gas, the inert gas, the second processing gas, and the inert gas are supplied onto the substrate 200 in this order. The configurations of the susceptor 217 and the gas introduction unit will be described later.

  A gap having a predetermined width may be provided between the ends of the first exhaust pipes 20 and 22 and the side wall of the reaction vessel 203 so that gas can pass through the gap. Through this gap, an inert gas is ejected from the first purge region 204a and the second purge region 204b toward the first processing region 201a and the second processing region 201b. By doing in this way, invasion of the processing gas into the first purge region 204a and the second purge region 204b can be suppressed, and reaction of the processing gas can be prevented.

  In the first embodiment, the angle between the first exhaust pipes 20 and 22 is 90 degrees, but the present invention is not limited to this. That is, in consideration of the supply time of various gases to the substrate 200, for example, the angle between the first exhaust pipes 20 and 22 forming the second processing region 201b may be increased or the like may be appropriately changed. Good.

  Moreover, in 1st Embodiment, although divided into four area | regions by 2 sets of 1st exhaust pipes 20 and 22, this invention is not limited to this. That is, three or more sets of first exhaust pipes 20 and 22 may be used to partition into a plurality of regions, or one set of first exhaust pipes 20 and 22 may be used to partition into two regions. Further, the first exhaust pipes 20 and 22 and the partition may be combined and partitioned into a plurality of regions.

(Susceptor)
As shown in FIG. 3 to FIG. 4, a susceptor 217 as a substrate mounting table is provided at the center of the bottom side in the reaction vessel 203. It has been. The susceptor 217 is formed of a non-metallic material such as carbon (C), aluminum nitride (AlN), ceramics, or quartz so that metal contamination of the substrate 200 can be reduced. In the case of substrate processing not considering metal contamination, aluminum (Al) may be used. The susceptor 217 is electrically insulated from the reaction vessel 203.

  The susceptor 217 is configured to support a plurality of (for example, five in the first embodiment) substrates 200 side by side on the same surface and on the same circle in the reaction vessel 203. Here, “on the same plane” is not limited to the completely same plane. When the susceptor 217 is viewed from above, a plurality of substrates 200 do not overlap each other as shown in FIGS. As long as they are lined up. Thus, the susceptor 217 has a mounting surface on which a plurality of substrates 200 are placed side by side along the same circle, and the mounting surface is configured to face the reaction vessel ceiling 203a of the reaction vessel 203. ing.

  It is preferable to provide substrate mounting portions 217b corresponding to the number of substrates 200 to be processed at the support position of the substrate 200 on the surface of the susceptor 217. For example, the substrate platform 217b may have a circular shape when viewed from the top surface and a concave shape when viewed from the side surface. By placing the substrate 200 in the substrate placement portion 217b, the substrate 200 can be easily positioned. Further, it is possible to prevent positional deviation that occurs when the substrate 200 jumps out of the susceptor 217 due to the centrifugal force accompanying the rotation of the susceptor 217.

  As shown in FIG. 4, the susceptor 217 is provided with a lifting drive unit 268 that lifts and lowers the susceptor 217. The susceptor 217 is provided with a plurality of through holes 217a. A plurality of substrate push-up pins 266 that push up the substrate 200 and support the back surface of the substrate 200 when the substrate 200 is carried into and out of the reaction vessel 203 are provided on the bottom surface of the reaction vessel 203 described above. The through-hole 217a and the board push-up pin 266 are arranged so that the board push-up pin 266 is not in contact with the susceptor 217 when the board push-up pin 266 is lifted or when the susceptor 217 is lowered by the lift drive unit 268. It is mutually arranged so that it may penetrate.

  The lift drive unit 268 is provided with a rotation drive unit 267 that rotates the susceptor 217. A rotation shaft (not shown) of the rotation driving unit 267 is connected to the susceptor 217. The susceptor 217 is configured to rotate in a direction parallel to the mounting surface of the susceptor 217 by operating the rotation driving unit 267. A controller 300, which will be described later, is connected to the rotation driving unit 267 via a coupling unit 267a. The controller 300 is configured to control the energization of the rotation drive unit 267 so that the susceptor 217 is rotated at a predetermined speed for a predetermined time. As described above, by rotating the susceptor 217, the substrate 200 placed on the susceptor 217 has the first processing region 201 a, the first purge region 204 a, the second processing region 201 b, and the second purge. The region 204b is moved in this order.

(Heating section)
A heater 218 as a heating unit is integrally embedded in the susceptor 217. When power is supplied to the heater 218, the substrate 200 placed on the substrate platform 217b is heated. For example, the surface of the substrate 200 is heated to a predetermined temperature (for example, room temperature to about 1000 ° C.). A plurality (for example, five) of heaters 218 may be provided on the same surface so as to individually heat the respective substrates 200 placed on the susceptor 217.

  The susceptor 217 is provided with a temperature sensor 274. A temperature regulator 223, a power regulator 224, and a heater power source 225 are electrically connected to the heater 218 and the temperature sensor 274 via a power supply line 222. Based on the temperature information detected by the temperature sensor 274, the power supply to the heater 218 is controlled.

  In addition, a heater 219 as a heating unit is integrally embedded in a processing chamber wall 202e constituting the processing chamber 202. When power is supplied to the heater 219, the inside of the processing chamber 202 is heated to, for example, about 150 ° C. to 200 ° C. The heaters 219 are provided on the four surfaces of the processing chamber wall 202e provided around the reaction vessel 203.

  A temperature sensor (not shown) is provided in the processing chamber 202. A temperature regulator 223, a power regulator 224, and a heater power source 225 are electrically connected to the heater 219 and the temperature sensor via a power supply line (not shown). Based on the temperature information detected by the temperature sensor, the power supply to the heater 219 is controlled.

  That is, by providing the heater 219 on the processing chamber wall 202e to heat the inside of the processing chamber 202, adhesion of by-products is suppressed even in a portion where maintenance is difficult such as the back surface of the susceptor 217. Further, even if there is only one exhaust device such as the vacuum pump 246, adhesion of by-products is suppressed. Further, instead of the heater 219, a circulating fluid path may be provided in the processing chamber wall 202e, and the circulating fluid may be supplied and heated. Further, the heater 219 and the circulating fluid path may be used in combination.

(Surceptor peripheral structure)
As shown in FIG. 3, the first transfer chamber casing 101 is provided adjacent to the processing chamber wall 202 e via any one of the gate valves 150 to 153. For example, when the gate valve 151 is opened, the inside of the processing chamber 202 and the first transfer chamber casing 101 communicate with each other. The first substrate transfer machine 112 transports the substrate 200 from the pod to the placement unit 217 b of the susceptor 217 via the second substrate transfer machine 124. As described above, the susceptor 217 has a plurality of mounting portions 217b on which the substrate 200 is mounted. In the first embodiment, five placement portions 217b are provided so that each of the placement portions 217b is equidistant with respect to the forward clockwise direction (for example, an interval of 72 degrees). The placement unit 217b is rotated together.

(Gas introduction part)
At the center of the reaction vessel ceiling 203a, for example, a gas introduction unit 250 formed in a cylindrical shape is provided. The upper end side of the gas introduction part 250 is airtightly connected to an opening opened in the reaction vessel ceiling 203a.

  The cylindrical interior of the gas introduction unit 250 is partitioned into a second processing gas introduction unit 252, an inert gas introduction unit 253, and a cleaning gas introduction unit 258. Specifically, a second processing gas introduction unit 252 is provided on the second processing region 201 b side in the gas introduction unit 250. In addition, an inert gas introduction unit 253 is provided on the first processing region 201 a side, the first purge region 204 a side, and the second purge region 204 b side in the gas introduction unit 250. Further, a cleaning gas introduction part 258 is provided in the center of the gas introduction part 250.

  On the side wall of the second processing gas introduction part 252 on the second processing region 201b side, a second processing gas ejection port 255 that opens to the second processing region 201b is provided.

  An inert gas outlet 254 that opens to the first processing region 201a is provided on the side wall of the inert gas introducing portion 253 on the first processing region 201a side. In addition, an inert gas outlet 256 that opens to the first purge region 204a is provided on the side wall of the inert gas introduction portion 253 on the first purge region 204a side. Further, an inert gas outlet 257 that opens to the second purge region 204b is provided on the side wall of the inert gas introduction portion 253 on the second purge region 204b side. Each of these inert gas outlets 254, 256, 257 is provided corresponding to a line-shaped gas supply unit 281a, 281b, 281c described later, and each line-shaped gas supply unit 281a, 281b, 281c. In order to inject inert gas along the two sets of first exhaust pipes 20 and 22 sandwiching the first exhaust pipe 20 and the second exhaust pipe 20 and 22, two openings arranged in the vicinity of each of the first exhaust pipes 20 and 22 are configured. Yes.

  A cleaning gas supply hole 259 which is an end of the cleaning gas introduction part 258 is provided at the bottom of the gas introduction part 250. That is, the cleaning gas supply hole 259 is provided at a position lower than the second processing gas ejection port 255 and the inert gas ejection ports 254, 256, 257.

  In this embodiment, a gas introduction unit is provided so that gas is supplied to each of the line-shaped gas supply units 281a, 281b, 281c and the plasma generation unit 206, which will be described later.

  A first processing gas introduction unit 282 for supplying gas to the line-shaped gas supply unit 281a is provided at the ceiling in the first processing region 201a of the reaction vessel 203. The upper end side of the first processing gas introduction part 282 is airtightly connected to an opening formed in the ceiling part of the reaction vessel 203. The lower end side of the first process gas introduction part 282 is connected to the upper part of the line-shaped gas supply part 281a.

  A first inert gas introduction unit (not shown) for supplying gas to the line-shaped gas supply unit 281b is provided on the ceiling of the first purge region 204a of the reaction vessel 203. Further, a second inert gas introduction part (not shown) for supplying gas to the line-shaped gas supply part 281c is provided at the ceiling part in the second purge region 204b of the reaction vessel 203. All of the upper end sides of these inert gas introduction portions are airtightly connected to an opening formed in the ceiling portion of the reaction vessel 203. The lower end side of these inert gas introduction parts is connected to the upper part of the line-shaped gas supply part 281b or the line-shaped gas supply part 281c.

  A plasma generation unit side gas introduction unit 260 for supplying gas to the plasma generation unit 206 is provided on the ceiling of the second processing region 201b of the reaction vessel 203. The upper end side of the plasma generation unit side gas introduction unit 260 is airtightly connected to an opening formed in the ceiling of the reaction vessel 203. The lower end side of the plasma generation unit side gas introduction unit 260 is connected to the upper part of the plasma generation unit 206.

  In addition, it is not necessary to provide at least any of the various gas introduction portions provided in the cylindrical shape of the gas introduction portion 250 and the respective jet outlets provided corresponding to these various gas introduction portions. Moreover, it can also comprise so that all may not be provided. In that case, gas is introduced from a gas supply unit provided at another position, such as the line-shaped gas supply units 281a, 281b, and 281c.

(First processing gas supply system)
The downstream end of the first process gas supply pipe 232a is connected to the upper end of the first process gas introduction part 282 for supplying gas to the line-shaped gas supply part 281a. The first processing gas supply pipe 232a is provided with a first processing gas supply source 232b, a mass flow controller (MFC) 232c that is a flow rate controller (flow rate control unit), and a valve 232d that is an on-off valve in order from the upstream direction. ing.

  From the first processing gas supply pipe 232a, the first processing gas, which is a gas containing the first element, passes through the MFC 232c, the valve 232d, the first processing gas introduction unit 282, and the line-shaped gas supply unit 281a. Is supplied to the processing area 201a.

In the present embodiment, the first processing gas is used as the source gas. The “source gas” here is one of the processing gases, and is a gas that becomes a source material when forming a thin film. The source gas is, for example, silicon (Si), titanium (Ti), tantalum (Ta), hafnium (Hf), zirconium (Zr), ruthenium (Ru), nickel (Ni), and the first element constituting the thin film. At least one of tungsten (W) is included. Specifically, in this embodiment, the source gas is, for example, dichlorosilane (SiH ₂ Cl ₂ , abbreviation: DCS) gas.

  A source gas supply system (first process gas supply system) is mainly configured by the first process gas supply pipe 232a, the MFC 232c, the valve 232d, the first gas introduction unit 282, and the line-shaped gas supply unit 281a. The source gas supply system may include at least one of the first processing gas supply source 232b or the vaporizer.

(Second processing gas supply system)
A downstream end of the second processing gas supply pipe 233a is connected to an upper end of the second processing gas introduction unit 252 in the gas introduction unit 250. The second processing gas supply pipe 233a is provided with a second processing gas supply source 233b, an MFC 233c, and a valve 233d that is an on-off valve in order from the upstream direction.

  The upstream end of the second processing gas branch pipe 233e is connected to the downstream side of the valve 233d of the second processing gas supply pipe 233a. The downstream end of the second processing gas branch pipe 233e is connected to the upper end of the plasma generation unit side gas introduction unit 260. The second processing gas branch pipe 233e is provided with a valve 233f that is an on-off valve.

  From the second processing gas supply pipe 233a, the second processing gas, which is a gas containing the second element, passes through the MFC 233c, the valve 233d, the second processing gas introduction part 252 and the second processing gas ejection port 255, or The gas is supplied into the second processing region 201b via the second processing gas branch pipe 233e, the valve 233f, the plasma generation unit side gas introduction unit 260, the gas introduction path and the gas outlet in the plasma generation unit 206. . At this time, the second processing gas is brought into a plasma state by the plasma generation unit 206.

  In the present embodiment, the second processing gas is used as a reaction gas. The “reactive gas” here is one of the processing gases, and is a gas that is in a plasma state and reacts with the first element-containing layer formed on the substrate 200 by the source gas as described later. The reaction gas contains a second element different from the first element contained in the source gas. Examples of the second element include any one of nitrogen (N), oxygen (O), carbon (C), and hydrogen (H), or a combination thereof.

In the present embodiment, the reaction gas is, for example, a nitrogen-containing gas. Specifically, ammonia (NH ₃ ) gas is used as the nitrogen-containing gas. Note that a material having a lower adhesion (viscosity) than the source gas is used as the reaction gas.

  The reaction gas supply system (second process gas) is mainly constituted by the second process gas supply pipe 233a, the MFC 233c, the valve 233d, the second process gas introduction part 252, the second process gas outlet 255, the second process gas branch pipe 233e, and the valve 233f. 2 processing gas supply system). The reactive gas supply system may include the second processing gas supply source 233b, the gas introduction path and the gas outlet in the plasma generation unit 206.

(Inert gas supply system)
A first inert gas introduction unit (not shown) for supplying gas to the line-shaped gas supply unit 281b and a second inert gas introduction unit (not shown) for supplying gas to the line-shaped gas supply unit 281c ( However, the downstream end of the first inert gas supply pipe 234a is connected to each of them. The first inert gas supply pipe 234a is provided with an inert gas supply source 234b, an MFC 234c, and a valve 234d that is an on-off valve in order from the upstream direction.

  From the first inert gas supply pipe 234a, an inert gas is supplied from the MFC 234c, the valve 234d, the first inert gas introduction part (not shown), the line-shaped gas supply part 281b, the second inert gas introduction part (however, The gas is supplied to each of the first purge region 204a and the second purge region 204b through the line gas supply unit 281c (not shown). The inert gas supplied into the first purge region 204a and the second purge region 204b acts as a purge gas.

  The upstream end of the first inert gas branch pipe 234e is connected to the downstream side of the valve 234d of the first inert gas supply pipe 234a. The downstream end of the first inert gas branch pipe 234 e is connected to the upper end of the inert gas introduction part 253 in the gas introduction part 250. The first inert gas branch pipe 234e is provided with a valve 234f that is an on-off valve.

  From the first inert gas branch pipe 234e, the inert gas passes through the first inert gas supply pipe 234a, the valve 234f, the inert gas inlet 253, and the inert gas outlets 254, 256, and 257, The gas is supplied to each of the first processing area 201a, the first purge area 204a, and the second purge area 204b. The inert gas ejected from each of the inert gas ejection ports 254, 256, and 257 forms a gas flow along the first exhaust pipes 20 and 22, as will be described later. Here, the inert gas introduction part 253 and the inert gas jet outlets 254, 256 and 257 are not provided, and an inert gas may not be introduced from the central part of the reaction vessel 203.

In the present embodiment, for example, nitrogen (N ₂ ) gas is used as the inert gas. In addition to N ₂ gas, for example, a rare gas such as helium (He) gas, neon (Ne) gas, or argon (Ar) gas can be used as the inert gas.

  Mainly, a first inert gas supply pipe 234a, an MFC 234c, a valve 234d, a first inert gas introduction part (not shown), a line-shaped gas supply part 281b, a second inert gas introduction part (not shown), The line-shaped gas supply unit 281c, the first inert gas branch pipe 234e, the valve 234f, the inert gas introduction unit 253, and the inert gas ejection ports 254, 256, and 257 constitute a first inert gas supply system. Note that the first inert gas supply system may include the inert gas supply source 234b.

  Further, the downstream end of the second inert gas supply pipe 235a is connected to the downstream side of the valve 232d of the first processing gas supply pipe 232a. The second inert gas supply pipe 235a is provided with an inert gas supply source 235b, an MFC 235c, and a valve 235d that is an on-off valve in order from the upstream direction.

From the second inert gas supply pipe 235a, an inert gas passes through the MFC 235c, the valve 235d, the first process gas supply pipe 232a, the first gas introduction unit 282, and the line-shaped gas supply unit 281a to perform the first process. It is supplied to the area 201a. The inert gas supplied from the line gas supply unit 281a into the first processing region 201a acts as a carrier gas or a dilution gas. As the inert gas, N ₂ gas or the like is used as in the case of the first inert gas supply system.

  A second inert gas supply system is mainly configured by the second inert gas supply pipe 235a, the MFC 235c, and the valve 235d. The second inert gas supply system may include an inert gas supply source 235b, a first processing gas supply pipe 232a, a first gas introduction unit 282, and a line-shaped gas supply unit 281a.

  The downstream end of the third inert gas supply pipe 236a is connected to the downstream side of the valve 233d of the second process gas supply pipe 233a. The third inert gas supply pipe 236a is provided with an inert gas supply source 236b, an MFC 236c, and a valve 236d that is an on-off valve in order from the upstream direction.

From the third inert gas supply pipe 236a, an inert gas passes through the MFC 236c, the valve 236d, the second process gas supply pipe 233a, the second process gas inlet 252 and the second process gas jet outlet 255, or the first The gas is supplied into the second processing region 201b through the two processing gas branch pipes 233e, the valve 233f, the plasma generation unit side gas introduction unit 260, the gas introduction path and the gas outlet in the plasma generation unit 206. The inert gas supplied into the second processing region 201b acts as a carrier gas or a dilution gas, like the inert gas supplied into the first processing region 201a. As the inert gas, N ₂ gas or the like is used as in the case of the first inert gas supply system.

  A third inert gas supply system is mainly configured by the third inert gas supply pipe 236a, the MFC 236c, and the valve 236d. The third inert gas supply system includes an inert gas supply source 236b, a second process gas supply pipe 233a, a second process gas introduction part 252, a second process gas jet outlet 255, and a second process gas branch pipe 233e. The valve 233f, the gas introduction path in the plasma generation unit 206, and the gas outlet may be considered.

(Cleaning gas supply system)
The substrate processing apparatus 10 of this embodiment may have a clean gas supply system. From the cleaning gas supply pipe 237a, the cleaning gas is supplied into the reaction vessel 203 through the MFC 237c, the valve 237d, the remote plasma generation unit 237e, the cleaning gas introduction unit 258, and the cleaning gas supply hole 259. In the reaction vessel 203, when a cleaning gas in a plasma state is supplied by the remote plasma generation unit 237e, by-products and the like are cleaned. The cleaning gas is, for example, at least one of nitrogen trifluoride (NF ₃ ) gas, hydrogen fluoride (HF) gas, chlorine trifluoride gas (ClF ₃ ) gas, and fluorine (F ₂ ) gas. .

(Plasma generator)
As shown in FIGS. 3 and 4, at least a part of the plasma generation unit 206 is provided above the second processing region 201b. The plasma generation unit 206 is configured to generate a reactive gas plasma in the second processing region 201b. Thus, by using plasma, the reaction gas can be activated and the substrate 200 can be processed even when the temperature of the substrate 200 is low.

  In the second processing region 201b, for example, a pair of rod-shaped electrodes 271 arranged in the horizontal direction are provided. The pair of electrodes 271 is covered with, for example, a quartz cover 206a. In the cover 206a of the plasma generation unit 206, the above-described reaction gas introduction path is provided.

  A high frequency power supply 273 is connected to the pair of electrodes 271 via a matching device 272 that matches impedance. When high frequency power is applied to the electrode 271 from the high frequency power supply 273, plasma is generated around the pair of electrodes 271. Note that plasma is mainly generated directly below the pair of electrodes 271. As described above, the plasma generation unit 206 generates so-called capacitively coupled plasma.

  For example, the pair of electrodes 271 of the plasma generation unit 206 are provided along the radial direction from the center of the reaction vessel 203 to the outside in a plan view, and are provided in parallel with the upper surface of the substrate 200. The pair of electrodes 271a is disposed on a path through which the substrate 200 passes. The length in the longitudinal direction of the pair of electrodes 271 is longer than the diameter of the substrate 200. Thereby, the plasma is sequentially irradiated on the entire surface of the substrate 200 that passes directly under the pair of electrodes 271. A plasma generation unit 206 is mainly configured by a pair of electrodes 271. Note that the plasma generator 206 may include a matching unit 272 and a high-frequency power source 273.

(Exhaust part)
As shown in FIG. 4, the reaction vessel 203 is provided with an exhaust pipe 231 for exhausting the atmosphere in the processing regions 201a and 201b and the purge regions 204a and 204b through an exhaust duct described later. A vacuum pump 246 as a vacuum exhaust device is connected to the exhaust pipe 231 via an APC (Auto Pressure Controller) 245 as a pressure regulator (pressure adjustment unit) and a valve 243. The pump is configured to be evacuated so that the pressure becomes a predetermined pressure (degree of vacuum). The valve 243 and the APC 245 are integrated so that the valve can be opened and closed to evacuate or stop evacuation in the reaction vessel 203, and the pressure can be adjusted by adjusting the valve opening.

(Configuration in the area with the line-shaped gas supply unit)
Here, in the first processing region 201a in which the line-shaped gas supply unit 281a is provided, in the first purge region 204a in which the line-shaped gas supply unit 281b is provided, and in the line-shaped gas supply unit 281c. The configuration in the provided second purge region 204b will be described in more detail.

In the present embodiment, the first processing region 201a, the first purge region 204a, and the second purge region 204b are configured in substantially the same manner. Hereinafter, the first processing region 201a in which the line-shaped gas supply unit 281a is provided will be described as an example, and the configuration in the first processing region 201a will be mainly described with reference to FIGS. 5 and 6. Description of the first purge region 204a and the second purge region 204b is omitted. In the following description, the line-shaped gas supply unit 281a in the first processing region 201a, the line-shaped gas supply unit 281b in the first purge region 204a, and the line-shaped gas supply unit 281c in the second purge region 204b are described. These are collectively referred to as “line-shaped gas supply unit 281”.
FIG. 5 is a schematic vertical sectional view of the first processing region 201a provided with the line-shaped gas supply unit 281a in the substrate processing apparatus 10 according to the present embodiment, and is a BB line of the process chamber shown in FIG. It is sectional drawing. FIG. 6 is a schematic cross-sectional view in the first processing region 201a in which the line-shaped gas supply unit 281a is provided in the substrate processing apparatus 10 according to the present embodiment.

(Line-shaped gas supply unit)
As shown in FIGS. 5 and 6, in the first processing region 201 a, the line-shaped gas supply unit 281 protrudes from the ceiling surface in the processing chamber 201 toward the substrate 200 on the susceptor 217. Is provided. The line-shaped gas supply unit 281 has an opening 283 formed in a line shape extending in the rotational radial direction of the susceptor 217 on the lower surface side thereof (that is, the surface side facing the substrate 200 on the susceptor 217). Gas is supplied into the first processing region 201a by ejecting gas from the opening 283. Here, the “line shape” means an elongated shape like a line. That is, the opening 283 is formed by an opening that is continuous in a long band shape when seen in a plan view.

  The opening 283 is formed such that the size in the longitudinal direction is larger than the diameter of the substrate 200 on the susceptor 217. The edge on the inner peripheral side (rotation center side of the susceptor 217) of the opening 283 is positioned further on the rotation center side of the susceptor 217 than the position where the inner peripheral edge of the substrate 200 passes when the susceptor 217 rotates. Yes. The outer peripheral edge of the opening 283 is located further on the outer peripheral side of the susceptor 217 than the position where the outer peripheral edge of the substrate 200 passes when the susceptor 217 rotates. Depending on the flow rate, pressure, and the like of the gas ejected from the opening 283, the position of the opening 283 is the same as that described above, for example, the opening 283 is arranged close to the rotation center side or the outer peripheral side of the susceptor 217. May be different.

  The line-shaped gas supply unit 281 includes a gas buffer region 284 as a gas diffusion space at a position upstream of the opening 283 in the gas ejection direction (that is, the gas supply direction). The gas buffer region 284 functions as a space for diffusing the gas prior to the ejection of the gas from the opening 283, and for this purpose, is formed so as to extend in the rotational radial direction of the susceptor 217 as with the opening 283. . In order to function as a gas diffusion space, the gas buffer region 284 is formed such that the size of the planar shape (specifically, for example, the area) is larger than the size of the planar shape in the opening 283.

  The gas buffer region 284 is connected to the downstream end of the gas supply connection pipe 285. The upstream end of the gas supply connecting pipe 285 is connected to the first processing gas introduction part 282. Accordingly, the first process gas is supplied to the line-shaped gas supply unit 281 via the first process gas supply pipe 232a and the first process gas introduction unit 282. Then, the first processing gas supplied to the line-shaped gas supply unit 281 is ejected into the first processing region 201a through the opening 283.

  However, at this time, the line-shaped gas supply unit 281 includes the gas buffer region 284. Therefore, the gas from the gas supply connection pipe 285 is diffused in the entire area of the susceptor 217 in the radial direction of the susceptor 217 in the gas buffer region 284 and then ejected from the opening 283 into the first processing region 201a. Therefore, the gas supply performed through the opening 283 can be made uniform in the rotational diameter direction of the susceptor 217, and the gas supply is concentrated at a specific location (for example, in the vicinity of the connection location of the gas supply connection pipe 285). Can be suppressed.

(Gap retaining member)
Further, as shown in FIGS. 5 and 6, it is desirable to arrange a gap holding member 286 in the first processing region 201 a so as to surround the line-shaped gas supply unit 281. The gap holding member 286 is provided so as to protrude from the ceiling surface in the processing chamber 201 toward the substrate 200 on the susceptor 217. As a result, the gap holding member 286 sets the space above the surface of the substrate 200 serving as a flow path for the gas supplied by the line-shaped gas supply unit 281 as a gap having a predetermined interval. That is, the gap holding member 286 protrudes toward the substrate 200 so that a gap of a predetermined distance is formed between the surface of the substrate 200 and the lower surface of the gap holding member 286 around the line-shaped gas supply unit 281. Yes.

  The size of the gap at the predetermined interval is not particularly limited, and is set as appropriate in consideration of the pressure and flow rate of the gas supplied from the line-shaped gas supply unit 281, the planar area of the first processing region 201 a, and the like. If it was done. Specifically, for example, the gas supplied from the line-shaped gas supply unit 281 efficiently spreads over the entire first processing region 201a, and the surface of the substrate 200 on the susceptor 217 is sufficiently exposed to the supplied gas. In order to achieve this, it is conceivable that the gap holding member 286 is disposed as close to the susceptor 217 as the lower surface of the gap holding member 286 does not interfere with the substrate 200.

  Further, as shown in FIG. 6, the gap holding member 286 is, for example, when viewed in plan so that the gas supplied from the line-shaped gas supply unit 281 spreads efficiently over the entire first processing region 201a. It is desirable that the shape and size be formed corresponding to the shape and size of the first processing region 201a excluding a portion where the line-shaped gas supply unit 281 and a gas discharge region 287 described later are provided. As a result, the gap holding member 286 is formed to be wider than the line-shaped gas supply unit 281 in the rotational circumferential direction of the susceptor 217 at least partially, more preferably all.

(Exhaust structure in the processing chamber)
As shown in FIG. 7, in the first processing area 201a and the second processing area 201b, the first exhaust pipes 20 and 22 as the first exhaust part and the second exhaust part as the second exhaust part, respectively. A fan-shaped exhaust duct 500 (exhaust pipe) including two exhaust pipes 24 is installed.

  The first exhaust pipe 20 is provided to extend in the radial direction of the susceptor 217 at one end in the circumferential direction of the first processing region 201a. The first exhaust pipe 22 is provided to extend in the radial direction of the susceptor 217 at the other end in the circumferential direction of the first processing region 201a. The second exhaust pipe 24 is provided in an arc shape on the outer periphery of the susceptor 217 in the first processing region 201a and the second processing region 201b. Here, the circumferential direction is a direction along the outer periphery of the susceptor 217, and is a rotation direction of the susceptor 217. The radial direction is a direction from the center of the susceptor 217 toward the outer periphery.

  The first exhaust pipe 20 is, for example, a hollow rectangular exhaust pipe, and has a plurality of, for example, elliptical first exhaust holes on the side surfaces on the first processing region 201a side and the second processing region 201b side. 20a. In the present embodiment, the first exhaust pipe 20 has three exhaust holes 20a, but the number may be other than three (including one). In the present embodiment, the first exhaust hole 20a has an oval shape, but may have an oval shape, a circular shape, an angular shape, or the like. An exhaust hole 20 b as a first connection hole for communicating with the second exhaust pipe 24 is formed in the lower surface of the outer peripheral end of the susceptor 217 of the first exhaust pipe 20.

The first exhaust hole 20a is not the surface facing the susceptor 217 of the first exhaust pipe 20, that is, the side surface facing the first processing region 201a, not the lower surface of the first exhaust pipe 20, and the second processing. It is formed on the side surface facing the region 201b.
When the exhaust hole is provided on the lower surface of the exhaust pipe 20, the exhaust hole is provided facing a narrow space facing the susceptor 217, and thus the exhaust efficiency from the exhaust hole is limited. Since the exhaust holes 20a are provided facing the first processing region 201a and the second processing region 201b, that is, a sufficiently large space, the gas in each processing region can be efficiently exhausted.

  The first exhaust hole 20a is formed on the side surface facing the first processing region 201a of the first exhaust pipe 20 and the side surface facing the second processing region 201b of the first exhaust pipe 20, It is desirable not to be formed on the side surface facing the first purge region 204a and the second purge region 204b. Since the exhaust holes are not provided on the side surfaces facing the first purge region 204a and the second purge region 204b, the gas in the first processing region 201a and the second processing region 201b in particular is supplied to the first exhaust pipe 20. Can be efficiently exhausted.

  The first exhaust pipe 22 has a structure similar to that of the first exhaust pipe 20, and a plurality of, for example, oval-shaped first electrodes are provided on the side surfaces on the first processing region 201a side and the second processing region 201b side. An exhaust hole 22a is provided. In addition, an exhaust hole 22 b as a first connection hole for communicating with the second exhaust pipe 24 is formed on the lower surface of the outer peripheral end of the susceptor 217 of the first exhaust pipe 22.

  The second exhaust pipe 24 is a hollow arc-shaped exhaust pipe, for example, and is provided on the outer periphery of the susceptor 217. The second exhaust pipe 24 is composed of a pipe container 24c and a pipe lid 24d that closes the upper surface of the pipe container 24c, and an upper surface (that is, second exhaust gas) in the same direction as the mounting surface of the susceptor 217 of the pipe lid 24d. A plurality of second exhaust holes 24a are formed in the upper surface of the pipe 24 (see FIG. 10). In the example of FIG. 7, the second exhaust pipe 24 has four exhaust holes 24a, but the number may be other than four (including one). Further, an exhaust hole 24b as an exhaust port for communicating with the exhaust pipe 231 is formed on the lower surface of the piping container 24c (that is, the lower surface of the second exhaust pipe 24).

  That is, the radial end portions (the end portions on the outer peripheral side of the susceptor 217) on the outer peripheral side of the first exhaust pipes 20 and 22 are respectively connected to the second exhaust pipe 24 and have a hollow structure. The insides of the pipes 20 and 22 and the inside of the second exhaust pipe 24 are in communication with each other. Further, the radial end portions (end portions on the center side of the susceptor 217) on the center side of the first exhaust pipes 20 and 22 are closed.

The second exhaust hole 24a, during substrate processing, is arranged below (Z ₂ direction in FIG. 8) than the substrate mounting surface of the susceptor 217. That is, the second exhaust hole 24a is the substrate placing direction on the substrate mounting surface of the susceptor 217 (Z ₂ direction in FIG. 8), is arranged to have a predetermined distance from the substrate mounting surface. By doing so, it becomes easy to supply sufficient processing gas to the substrate surface placed on the substrate placement surface.

Further, as shown in FIG. 5, the first exhaust hole 20a, 22a is disposed above (Z ₁ direction in FIG. 5) than the opening 283 of the gas inlet. By doing so, the process gas is suppressed from moving to the next region while supplying a sufficient process gas to the substrate surface placed on the substrate placement surface.

  Further, in the present embodiment, the first exhaust holes 20 a and 22 a are arranged on the side surface of the first exhaust pipe 22 provided so as to extend in the radial direction of the susceptor 217, thereby providing the outer periphery of the susceptor 217. Compared to the case where exhaust is performed only from the second exhaust hole 24a, the gas concentration difference between the center side and the outer periphery side in the first processing region 201a and the second processing region 201b is suppressed. be able to.

  Further, third exhaust pipes 26 serving as hollow arc-shaped third exhaust portions are provided on the outer peripheral portions of the susceptor 217 in the first purge region 204a and the second purge region 204b, respectively. The third exhaust pipe 26 has the same structure as the second exhaust pipe 24, and has a plurality of third exhaust holes 26a in the same direction as the second exhaust holes 24a. In the example of FIG. 7, the third exhaust pipe 26 has four exhaust holes 26 a, but the number may be other than four (including one). Similarly to the second exhaust pipe 24, the third exhaust pipe 26 has an exhaust hole 26 b for communicating with the exhaust pipe 231 on the lower surface thereof. The third exhaust pipe 26 is disposed on the outer periphery of the susceptor 217 at the same position (including the position in the height direction) as the second exhaust pipe 24. The height direction is the Z direction in FIG.

  As shown by the arrows in FIG. 7, the inert gas is ejected from the inert gas outlet 254 to the first processing region 201 a, and the second processing gas is ejected from the second processing gas outlet 255 to the second process. It is ejected to the area 201b. Inert gas is ejected from the inert gas outlet 256 and the inert gas outlet 257 to the first purge area 204a and the second purge area 204b, respectively. As shown in FIGS. 7 and 8, the first processing gas flows from the first processing region 201a through the first exhaust holes 20a and 22a through the first exhaust pipes 20 and 22, and the exhaust holes It flows into the second exhaust pipe 24 through 20b, 22b and the connecting portion 28. In addition, the first processing gas flows not only to the first exhaust holes 20a and 22a but also to the second exhaust pipe 24 via the second exhaust holes 24a. Then, the gas flows from the second exhaust pipe 24 to the exhaust pipe 231 through the exhaust hole 24 b and is discharged from the exhaust pipe 231 to the outside of the processing chamber 201.

  Similarly to the first processing gas, the second processing gas also flows from the second processing region 201b into the first exhaust pipes 20 and 22 through the first exhaust holes 20a and 22a, and the exhaust holes 20b. , 22b and the connection portion 28, and flows into the second exhaust pipe 24. Further, the second processing gas flows into the second exhaust pipe 24 not only through the first exhaust holes 20a and 22a but also through the second exhaust holes 24a. Then, the gas is discharged from the second exhaust pipe 24 to the outside of the processing chamber 201 through the exhaust pipe 231.

  The inert gas flows from the first purge region 204a and the second purge region 204b into the third exhaust pipe 26 through the third exhaust hole 26a, respectively. Then, the gas flows from the third exhaust pipe 26 to the exhaust pipe 231 through the exhaust hole 26 b and is discharged from the exhaust pipe 231 to the outside of the processing chamber 201. In this way, it is possible to effectively prevent the first and second processing gases from being mixed with each other in the processing chamber 201.

  The structure of the exhaust duct 500 including the first exhaust pipes 20 and 22 and the second exhaust pipe 24 will be described with reference to FIGS. FIG. 9 is a perspective view showing the reaction vessel ceiling 203a according to the first embodiment. FIG. 10A is a perspective view showing a state of the exhaust duct 500 before the reaction vessel ceiling 203a according to the first embodiment is mounted on the reaction vessel main body 203b, and FIG. 10B is the reaction vessel ceiling 203a. It is a perspective view which shows the state of the exhaust duct 500 which mounted | wore with the reaction container main body 203b. FIG. 11 is an explanatory diagram (longitudinal sectional view) of the exhaust duct 500 according to the first embodiment. Here, in FIG. 9, FIG. 10, the gas introduction part 250 is only shown by the ring shape.

  The first exhaust pipe 20 is attached to the reaction vessel ceiling 203a with one end attached to a gas introduction part 250 formed in a ring shape. The first exhaust pipe 22 is attached to the reaction vessel ceiling 203a with one end thereof attached to the gas introduction part 250, for example, approximately 90 degrees away from the first exhaust pipe 20. For example, four convex portions (not shown) are formed around the exhaust holes 20 b and 22 b on the lower surfaces of the end portions of the first exhaust pipes 20 and 22.

  The second exhaust pipe 24 is attached to the reaction vessel main body 203b. A connection portion 28 is provided at a position corresponding to the exhaust holes 20b and 22b of the first exhaust pipes 20 and 22 on the upper surface (pipe lid 24d) of the second exhaust pipe 24.

  The connection portion 28 is formed with a through hole 28 a that allows the first exhaust pipes 20, 22 and the second exhaust pipe 24 to communicate with each other. The through hole 28a has a small diameter on the first exhaust pipes 20 and 22 side on the exhaust gas introduction side and a large diameter on the second exhaust pipe 24 side on the exhaust gas discharge side. In addition, four recesses (not shown) are formed around the through-holes 28a on the upper surface of the connection portion 28, and the recesses are combined with the protrusions of the first exhaust pipes 20 and 22, respectively. The exhaust pipes 20 and 22 and the second exhaust pipe 24 are connected to each other through the pipe. An O-ring 29 as a seal member is provided on the side of the connecting portion 28 where the reaction vessel ceiling 203a is mounted (the upper surface of the connecting portion 28), and the reaction vessel ceiling 203a is attached to the reaction vessel main body 203b. The inside is kept airtight.

  That is, by attaching the reaction vessel ceiling 203a to the reaction vessel main body 203b, the other ends of the first exhaust pipes 20 and 22 are connected to the second exhaust pipe 24 via the connection portion 28. Further, by removing the reaction vessel ceiling 203a from the reaction vessel main body 203b, the first exhaust pipes 20 and 22 and the second exhaust pipe 24 are separated, and maintenance in each exhaust pipe is facilitated.

  In the first embodiment, the connecting portion 28 is provided on the second exhaust pipe 24 side, but the present invention is not limited to this. That is, you may provide in the 1st exhaust piping 20 and 22 side. At this time, the O-ring 29 is provided on the reaction vessel main body 203b mounting side (the lower surface of the connection portion 28) of the connection portion 28. Further, the configuration in which the concave portion is formed on the upper surface of the connection portion 28 has been described, but the present invention is not limited to this, and the convex portion is formed on the upper surface of the connection portion 28 and the concave portion is formed on the lower surfaces of the first exhaust pipes 20 and 22. You may do it.

(Control part)
Next, the controller 300 which is a control part (control means) of this embodiment is demonstrated using FIG. FIG. 12 is a schematic configuration diagram of a controller of the substrate processing apparatus 10 preferably used in the present embodiment.

  As shown in FIG. 12, the controller 300, which is a control unit (control means), is configured as a computer including a CPU (Central Processing Unit) 301a, a RAM (Random Access Memory) 301b, a storage device 301c, and an I / O port 301d. Has been. The RAM 301b, the storage device 301c, and the I / O port 301d are configured to exchange data with the CPU 301a via the internal bus 301e. For example, an input / output device 302 configured as a touch panel or the like is connected to the controller 300.

  The storage device 301c includes, for example, a flash memory, an HDD (Hard Disk Drive), and the like. In the storage device 301c, a control program for controlling the operation of the substrate processing apparatus 10 and a process recipe in which a procedure and conditions for substrate processing such as film formation processing described later are described in a readable manner. Note that the process recipe is a combination of functions so that a predetermined result can be obtained by causing the controller 300 to execute each procedure in a substrate processing step to be described later, and functions as a program. Hereinafter, the process recipe, the control program, and the like are collectively referred to as simply a program. When the term “program” is used in this specification, it may include only a process recipe alone, may include only a control program alone, or may include both. The RAM 301b is configured as a memory area (work area) in which a program or data read by the CPU 301a is temporarily stored.

  The I / O port 301d includes the above-described MFCs 232c, 233c, 234c, 235c, 236c, 237c, valves 232d, 233d, 233f, 234d, 234f, 235d, 236d, 237d, 243, pressure sensor 248, APC 245, vacuum pump 246, The heaters 218 and 219, the temperature sensor 274, the matching unit 272, the high frequency power supply 273, the rotation mechanism 267, the lifting mechanism 268, and the like are connected. The I / O port 301d is also connected to a power regulator 224, a heater power source 225, and a temperature regulator 223 which are not shown.

  The CPU 301a is configured to read and execute a control program from the storage device 301c, and to read a process recipe from the storage device 301c in response to an operation command input from the input / output device 302 or the like. Then, the CPU 301a adjusts the flow rates of various gases by the MFCs 232c, 233c, 234c, 235c, 236c, and 237c, valves 232d, 233d, 233f, 234d, 234f, 235d, 236d, and so on in accordance with the contents of the read process recipe. 237d, 243 opening / closing operation, APC 245 opening / closing operation, pressure sensor 248 based pressure adjustment operation, APC 245 temperature adjustment operation, temperature sensor 274 temperature adjustment operation, heater 219 temperature adjustment operation based on temperature sensor (not shown), vacuum Start and stop of pump 246, rotation and rotation speed adjustment operation of susceptor 217 by rotating mechanism 267, lifting and lowering operation of susceptor 217 by lifting mechanism 268, power supply and stop by high frequency power supply 273, impedance by matching unit 272 It is configured to control the adjustment operation and the like.

  The controller 300 is not limited to being configured as a dedicated computer, but may be configured as a general-purpose computer. For example, an external storage device storing the above-described program (for example, magnetic tape, magnetic disk such as a flexible disk or hard disk, optical disk such as CD or DVD, magneto-optical disk such as MO, semiconductor memory such as USB memory or memory card) The controller 300 according to the present embodiment can be configured by preparing 303 and installing the program in a general-purpose computer using the external storage device 303. The means for supplying the program to the computer is not limited to supplying the program via the external storage device 303. For example, the program may be supplied without using the external storage device 303 by using communication means such as the Internet or a dedicated line. Note that the storage device 301c and the external storage device 303 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as a recording medium. Note that when the term “recording medium” is used in this specification, it may include only the storage device 301c alone, may include only the external storage device 303 alone, or may include both.

(3) Substrate Processing Step Subsequently, as a step of the semiconductor manufacturing process according to the present embodiment, the above-described reaction vessel 203 is used.
A substrate processing process performed using the processing chamber 202b including the above will be described with reference to FIGS. FIG. 13 is a flowchart showing a substrate processing process according to this embodiment, and FIG. 14 is a flowchart showing a process for the substrate in the film forming process in the substrate processing process according to this embodiment. In the following description, the operation of each part of the substrate processing apparatus 10 is controlled by the controller 300.

Here, dichlorosilane (DCS), which is a silicon-containing gas, is used as the first processing gas, and ammonia (NH ₃ ) gas, which is a nitrogen-containing gas, is used as the second processing gas, and an insulating film is formed on the substrate 200. An example of forming a silicon nitride film (SiN film) will be described.

(Substrate loading / placement step (S101))
A substrate carrying-in / placement process in which the substrate 200 is carried into the reaction container 203 and placed on the substrate platform 217b will be described. First, the raising / lowering drive unit 268 lowers the susceptor 217 to the transfer position of the substrate 200, thereby causing the substrate push-up pin 266 to penetrate the through hole 217 a of the susceptor 217. As a result, the substrate push-up pin 266 is in a state of protruding by a predetermined height from the surface of the susceptor 217. Subsequently, the gate valve 151 is opened, and a predetermined number (for example, five) of substrates 200 (processing substrates) is loaded into the reaction vessel 203 using the first substrate transfer machine 112. Then, the susceptor 217 is placed on the same surface of the susceptor 217 so that the substrates 200 do not overlap with each other about the rotation axis (not shown). Accordingly, the substrate 200 is supported in a horizontal posture on the substrate push-up pins 266 protruding from the surface of the susceptor 217.

  When the substrate 200 is loaded into the reaction vessel 203, the first substrate transfer machine 112 is retracted out of the reaction vessel 203, the gate valve 151 is closed, and the inside of the reaction vessel 203 is sealed. Thereafter, the susceptor 217 is raised by the lift drive unit 268 so that the tip of the substrate push-up pin 266 is positioned below the susceptor 217. As a result, the substrate 200 is placed on the substrate platform 217b provided on the susceptor 217 on each bottom surface of the first processing region 201a, the first purge region 204a, the second processing region 201b, and the second purge region 204b. Placed.

When the substrate 200 is carried into the reaction vessel 203, N ₂ gas as a purge gas is supplied from the inert gas supply unit into the reaction vessel 203 while the reaction vessel 203 is exhausted by the exhaust unit. preferable. That is, by operating the vacuum pump 246 and opening the valve 243 and the APC 245, while exhausting the inside of the reaction vessel 203, at least opening the valve 234 d of the first inert gas supply unit, It is preferable to supply _two gases. Thereby, it is possible to suppress intrusion of particles into the processing region 201 and adhesion of particles onto the substrate 200. Here, the inert gas may be further supplied from the second inert gas supply unit and the third inert gas supply unit. Note that the vacuum pump 246 is always operated at least from the substrate loading / mounting step (S101) to the completion of the substrate unloading step (S109) described later.

(Start rotation of susceptor (S102))
After placing the substrate 200 on the substrate platform 217b, the rotation driving unit 267 is operated to start the rotation of the susceptor 217. At this time, the rotation speed of the susceptor 217 is controlled to a predetermined speed by the controller 300. The predetermined speed is, for example, 1 rotation / second. By rotating the susceptor 217, the substrate 200 starts moving in the order of the first processing region 201a, the first purge region 204a, the second processing region 201b, and the second purge region 204b. 200 passes.

(Gas supply / pressure adjustment step (S103))
A gas supply / pressure adjustment process for supplying a processing gas and an inert gas and adjusting the inside of the reaction vessel 203 to a desired pressure will be described. After the susceptor 217 reaches a predetermined rotational speed, at least the valves 232d, 233d, and 234d are simultaneously opened, and supply of the processing gas and the inert gas to the processing region 201 and the purge region 204 is started. That is, by opening the valve 232d and supplying DCS gas into the first processing region 201a, and opening the valve 233d and supplying NH ₃ into the second processing region 201b, the processing gas is supplied from the processing gas supply unit. Supply. Further, the inert gas is supplied from the inert gas supply unit by opening the valve 234d and supplying N ₂ gas which is an inert gas into the first purge region 204a and the second purge region 204b. At this time, DCS gas, NH ₃ , and inert gas are supplied to each region in parallel.

  Specifically, the valve 232d is opened and DCS gas is supplied from the first gas supply pipe 232a to the first processing region 201a, while the first exhaust pipes 20 and 222 in the first processing region 201a and the first The exhaust pipe 231 is exhausted through the second exhaust pipe 24. At this time, the MFC 232c is adjusted so that the flow rate of the DCS gas becomes a predetermined flow rate. Note that the supply flow rate of the DCS gas controlled by the MFC 232c is, for example, a flow rate in the range of 100 sccm to 5000 sccm. In this way, by exhausting through the first exhaust pipes 20 and 22 and the second exhaust pipe 24 in the first processing region 201a, the processing from the first processing region 201a to another region is performed. Gas leakage can be suppressed.

When supplying DCS gas into the first processing region 201a, the valve 235d is opened, and N ₂ gas as a carrier gas or dilution gas is supplied from the second inert gas supply pipe 235a into the first processing region 201a. It is preferable to supply to. As a result, the first processing area 201a
The supply of DCS gas into the inside can be promoted.

Further, the valve 233d is opened, and the NH ₃ is supplied from the second gas supply pipe 233a to the second processing region 201b, and the first exhaust pipes 20 and 22 and the second exhaust gas in the second processing region 201b are supplied. The exhaust pipe 231 is evacuated through the pipe 24. At this time, the MFC 233c is adjusted so that the NH ₃ flow rate becomes a predetermined flow rate. Note that the NH ₃ supply flow rate controlled by the MFC 233c is, for example, a flow rate in the range of 100 sccm to 5000 sccm. In this way, by exhausting through the first exhaust pipes 20 and 22 and the second exhaust pipe 24 in the second processing region 201b, processing from the second processing region 201b to another region is performed. Gas leakage can be suppressed.

When supplying NH ₃ into the second processing region 201b, the valve 236d is opened, and N ₂ gas as a carrier gas or a dilution gas is supplied from the third inert gas supply pipe 236a into the second processing region 201b. It is preferable to supply to. Thereby, supply of NH ₃ into the second processing region 201b can be promoted.

Further, the valve 234d is opened, and N ₂ gas, which is an inert gas as a purge gas, is supplied from the first inert gas supply pipe 234a to the first purge region 204a and the second purge region 204b, respectively. The exhaust pipe 231 is exhausted through the third exhaust pipe 26. At this time, the MFC 234c is adjusted so that the flow rate of the N ₂ gas becomes a predetermined flow rate.

  In parallel with the gas supply, the inside of the reaction vessel 203 is evacuated by the vacuum pump 246 so that the inside of the reaction vessel 203 has a desired pressure (for example, 200 Pa). At this time, the pressure in the reaction vessel 203 is measured by the pressure sensor 248, and the opening degree of the APC 245 is feedback-controlled based on the measured pressure information.

(Start of plasma generation (S104))
Next, plasma generation is started in the plasma generation unit 206 while the susceptor 217 is rotating. That is, supply of electric power from the high frequency power supply 273 is started to the electrodes constituting the plasma generation unit 206. When power is supplied, plasma is generated in the second processing region 201b.

(Film formation process (S105))
The NH ₃ supplied into the second processing region 201b and having passed through the lower part of the plasma generation unit 206 becomes a plasma state in the second processing region 201b, and the second processing region 201b is activated by the active species contained therein. Plasma treatment is performed on the substrate 200 that is carried inward. Also in the film forming process, the gas in the first processing region 201a is exhausted through the first exhaust pipes 20 and 22 and the second exhaust pipe 24 in the first processing region 201a. The gas in the second processing region 201b is exhausted through the first exhaust pipes 20 and 22 and the second exhaust pipe 24 in the second processing region 201b. In this way, leakage of the processing gas from the first processing region 201a and the second processing region 201b to other regions can be suppressed.

As described above, by rotating the susceptor 217, the substrate 200 repeats moving in the order of the first processing region 201a, the first purge region 204a, the second processing region 201b, and the second purge region 204b. Therefore, as shown in FIG. 14, the substrate 200 is alternately supplied with DCS gas, N ₂ gas (purge), plasma NH ₃ , and N ₂ gas (purge). Will be implemented several times. Here, the details of the film forming step (S105) will be described with reference to FIG.

(First process gas region passage (S201))
First, DCS gas is supplied to the surface of the substrate 200 that has passed through the first processing region 201 a, and a silicon-containing layer is formed on the substrate 200. The supplied gas is exhausted through the first exhaust pipes 20 and 22 and the second exhaust pipe 24 in the first processing region 201a.

(First purge region passage (S202))
Next, the substrate 200 on which the silicon-containing layer is formed passes through the first purge region 204a. At this time, N ₂ gas, which is an inert gas, is supplied to the substrate 200 that passes through the first purge region 204a. The supplied gas is exhausted through the third exhaust pipe 26 in the first purge region 204a.

(Second process gas region passage (S203))
Next, NH ₃ gas in a plasma state is supplied to the surface of the substrate 200 that passes through the second processing region 201b. At this time, the NH ₃ gas in a plasma state reacts with at least a part of the silicon-containing layer formed on the substrate 200 in the first processing region 201a. As a result, the silicon-containing layer is nitrided and modified into a SiN layer containing silicon and nitrogen. The supplied gas is exhausted through the first exhaust pipes 20 and 22 and the second exhaust pipe 24 in the second processing region 201b.

(Second purge region passage (S204))
Then, the substrate 200 on which the SiN layer is formed in the second processing region 201b passes through the second purge region 204b. At this time, N ₂ gas, which is an inert gas, is supplied to the substrate 200 that passes through the second purge region 204b. The supplied gas is exhausted through the third exhaust pipe 26 in the second purge region 204b.

(Check number of cycles (S205))
In this way, one rotation of the susceptor 217 is defined as one cycle, that is, one cycle passes through the substrate 200 through the first processing region 201a, the first purge region 204a, the second processing region 201b, and the second purge region 204b. By performing this cycle at least once, a SiN film having a predetermined thickness can be formed on the substrate 200. Here, it is confirmed whether or not the above-described cycle has been performed a predetermined number of times. When the cycle is performed a predetermined number of times, it is determined that the desired film thickness has been reached, and the film forming process is terminated. If the cycle has not been performed a predetermined number of times, that is, it is determined that the desired film thickness has not been reached, the process returns to S201 to continue the cycle process.

(Stop of plasma generation, etc. (S106 to S108))
In S205, the above-described cycle is performed a predetermined number of times, and after determining that a SiN film having a desired thickness has been formed on the substrate 200, plasma generation in the plasma generation unit 206 is stopped (S106). That is, power supply from the high frequency power supply 273 to the electrodes constituting the plasma generation unit 206 is stopped. At this time, the supply of DCS gas and NH ₃ to the first processing region 201a and the second processing region 201b is also stopped (S107), and the rotation of the susceptor 217 is stopped (S108).

(Substrate unloading step (S109))
After stopping the plasma generation or the like (S106 to S108), the substrate is unloaded as follows. First, the substrate push-up pins 266 are raised, and the substrate 200 is supported on the substrate push-up pins 266 that protrude from the surface of the susceptor 217. Then, the gate valve 151 is opened, and the five substrates 200 in the reaction vessel 203 are carried out of the reaction vessel 203 using the first substrate transfer machine 112. When the multi-sheet processing in units of five sheets is performed a predetermined number of times (Yes in S110), the substrate processing process according to the present embodiment is finished. If the multi-sheet processing of 5 sheets has not been performed a predetermined number of times (No in S110), the process returns to S101.
In the above, the conditions such as the temperature of the substrate 200, the pressure in the reaction vessel 203, the flow rate of each gas, the power applied to the plasma generation unit 206, the processing time, etc. Adjust as desired.

  15 and 16 are diagrams schematically illustrating a gas flow when gas is supplied from the line-shaped gas supply unit 281 in the present embodiment.

(Gas ejection from the opening)
When gas is supplied into the first processing region 201a using the line-shaped gas supply unit 281, the gas supplied to the first processing gas introduction unit 282 is connected to the gas supply connection as shown in FIG. After passing through the pipe 285 and the gas buffer region 284, it is ejected from the opening 283 into the first processing region 201a (see arrow f1).

  At this time, the gas flow ejected from the opening 283 passes through the gas buffer region 284. The gas buffer region 284 is formed such that its planar shape is larger than the planar shape of the opening 283, thereby functioning as a gas diffusion space. Therefore, the gas flow ejected from the opening 283 is ejected after diffusing in the entire area of the susceptor 217 in the radial direction of the susceptor 217 in the gas buffer region 284. Uniformity is achieved. Therefore, it is suppressed that the gas flow ejected from the opening part 283 concentrates on a specific location (for example, the vicinity of the connection location of the gas supply connection pipe 285).

(Gas flow on substrate surface)
The gas flow ejected from the opening 283 is then passed through the gap between the surface of the substrate 200 on the susceptor 217 and the lower surface of the gap holding member 286 as shown in FIGS. It extends over the entire processing area 201a (see arrow f2).

  At this time, the gas flow spreading over the entire area of the first processing region 201a is mainly in a direction orthogonal to the longitudinal direction (that is, the rotational radial direction of the susceptor 217) in which the opening 283 extends (that is, the rotational circumferential direction of the susceptor 217). Flowing is the center. In addition, the gas flow from the opening 283 serving as the base is made uniform in the rotational diameter direction of the susceptor 217 as described above. Therefore, the gas flow spreading over the entire first processing region 201a has a reduced pressure difference between the rotation center side and the outer periphery side of the susceptor 217.

  Further, since the gas flow supplied into the first processing region 201a is ejected from the opening 283 formed in a narrow line shape, the flow is accelerated by the venturi effect in the opening 283. Since the opening 283 ejects gas at a short distance from the substrate 200, the gas reaches the substrate 200 with a high pressure and a fast flow immediately below the opening 283. As described above, the gas that has reached the substrate 200 spreads mainly in the rotational circumferential direction of the susceptor 217 from directly below the opening 283. At this time, a gap holding member 286 is provided around the line-shaped gas supply unit 281, and the space above the surface of the substrate 200 is narrowed by the gap holding member 286, whereby the surface of the substrate 200 and the gap holding member 286 are separated. A gap between the lower surface and the lower surface is maintained at a predetermined interval. Therefore, the gas flow that spreads from directly below the opening 283 mainly in the rotational circumferential direction of the susceptor 217 passes through the gas flow passage narrowed by the gap holding member 286, and the flow of the gas is fast in the first processing region 201a. Spread to the whole area. In other words, the gap retaining member 286 narrows the cross-sectional area of the gas flow path, so that the gas flow supplied into the first processing region 201a is maintained in the first flow region while maintaining the flow velocity of the gas flow ejected from the opening 283. It efficiently spreads over the entire processing area 201a.

  The substrate 200 on the susceptor 217 moves in the first processing region 201a where the gas flow spreads over the entire first processing region 201a. At this time, since the gap holding member 286 is provided around the line-shaped gas supply unit 281 in the first processing region 201a, the gas flow is, for example, as in the case where the gap holding member 286 does not exist. It does not diffuse to the ceiling surface side in 201. That is, the gas flow always flows near the surface of the substrate 200 in the first processing region 201a. Therefore, in the first processing region 201a, the substrate 200 moving in the region is sufficiently exposed to the gas flow.

  In order to ensure efficient gas expansion and sufficient gas exposure as described above, the gap holding member 286 provided around the line-shaped gas supply unit 281 is at least partly, preferably all, Most of the first processing region 201a excluding the line-shaped gas supply unit 281 and the gas discharge region 287 when viewed in plan is formed wider than the line-shaped gas supply unit 281 in the rotational circumferential direction of the susceptor 217. It is preferable to cover.

  In addition, the gap holding member 286 is preferably formed as a separate member from the member constituting the ceiling surface of the processing chamber 201. If it is a different member, for example, by preparing a plurality of types of gap holding members 286, it is possible to adjust the size of the gap between the surface of the substrate 200 serving as the gas flow path and the lower surface of the gap holding member 286. Because it becomes. In that case, the gap holding member 286 may be detachably attached to the ceiling surface of the processing chamber 201 using, for example, a known fastener represented by a screw.

(Gas flow in the gas discharge area)
The gas flow that is ejected from the opening 283 and spreads from directly below in the rotational circumferential direction of the susceptor 217 eventually reaches the gas discharge region 287. The gas discharge region 287 is a space formed by the ceiling surface in the processing chamber 201 on the upper side, and acts so that the space above the surface of the substrate 200 is wider than the portion directly below the gap holding member 286. Therefore, the conductance when the gas flows into the gas discharge region 287 is larger than the conductance in the gap below the first exhaust pipes 20 and 22 in the gas flow that has reached the gas discharge region 287. Therefore, as shown in FIG. 15, the gas diffuses into the gas exhaust region 287 without flowing into the other adjacent region, and passes through the first exhaust holes 20 a, 22 a formed in the first exhaust pipes 20, 22. Is sucked into the exhaust duct 500 (see arrow f3). Specifically, the first exhaust hole 20 a of the first exhaust pipe 20, the first exhaust hole 22 a of the first exhaust pipe 22, and the second exhaust hole 24 a of the second exhaust pipe 24 are used for the first exhaust. The air is sucked into the pipes 20 and 22 and the second exhaust pipe 24.

  In the present embodiment, since the gas is exhausted from the first exhaust holes 20a and 22a that directly face the gas exhaust region 287, the gas diffused in the gas exhaust region 287 can be efficiently exhausted. In particular, the exhaust efficiency of the gas diffused in the gas exhaust region 287 can be improved as compared with the case where exhaust holes are provided on the lower surfaces of the first exhaust pipes 20 and 22. Further, in comparison with the case where gas is exhausted only from the second exhaust hole 24a provided in the vicinity of the outer peripheral end of the susceptor 217, the amount of gas flowing into the adjacent region from the gap below the first exhaust pipes 20 and 22 is reduced. The amount can be further reduced.

  Thus, the first processing gas ejected to the first processing region 201a is discharged from the first processing region 201a by the exhaust duct 500. Therefore, it is possible to suppress the first processing gas from flowing from the first processing region 201a to another region. In addition, it becomes easy to uniformly supply the first processing gas onto the substrate 200 in the first processing region 201a.

  At this time, in the first processing region 201a, gas is also exhausted from the second exhaust hole 24a provided in the vicinity of the outer peripheral end of the susceptor 217, so that the rotation center side of the susceptor 217 is directed to the outer peripheral side. A gas stream is also formed. If the inert gas is introduced into the first processing region 201a from the central portion of the processing chamber 203 through the inert gas introduction portion 253 and the inert gas outlet 254, this is introduced. The inert gas also forms a gas flow from the rotation center side of the susceptor 217 toward the outer peripheral side.

  Further, in the first exhaust pipes 20 and 22, a gas flow is formed from the rotation center side of the susceptor 217 toward the outer peripheral side by the action of the vacuum pump 246 of the exhaust pipe 231 connected to the second exhaust pipe 24. (See arrow f4).

  The pitches and diameters of the first exhaust holes 20a, 22a and the second exhaust holes 24a are not limited to the same, and each exhaust hole is sucked so that there is no gas flow stagnation in each processing region. The pitch and diameter of each exhaust hole may be different so that the amount of gas to be discharged does not vary greatly, that is, to some extent exhaust from any exhaust hole. Further, an opening area adjusting mechanism for changing the opening area of the first exhaust holes 20a, 22a, 24a may be provided in the first exhaust pipes 20, 22, 24. As an opening area adjustment mechanism, for example, there is a method of adjusting the effective area by installing a part that obstructs flow in the flow path of the opening surface, and moving and fixing the part.

  Further, by making the pitch and diameter of the first exhaust holes 20a, 22a and the second exhaust holes 24a different, the gas concentration in the radial direction of the susceptor 217 can be finely adjusted according to the film thickness. However, it is preferable to provide a conductance adjusting means for adjusting the balance of the gas flow on the outer peripheral side of the outermost first exhaust holes 20a, 22a in the first exhaust pipes 20, 22. As the conductance adjusting means, for example, a valve capable of adjusting the flow rate such as a butterfly valve is used. However, any member may be used as long as it prevents the gas flow in the exhaust duct 500, and it rotates in the duct with respect to the vertical or vertical axis. May be. The conductance adjusting means is connected to the controller 300 and controlled. Note that the conductance adjusting means may be provided in the connection portion 28.

(4) Effects according to the present embodiment According to the present embodiment, at least the following effects are provided.
(A) Since the gas in the processing gas region is exhausted from the boundary between the region to which the processing gas is supplied and the region to which the inert gas is supplied, the center side and the outer periphery of the region are compared to the exhaust from the outer peripheral portion The difference in the processing gas concentration on the side can be suppressed.
(B) It is possible to further suppress the processing gas from flowing into the inert gas region as compared with the configuration in which exhaust is performed from the outer periphery of the susceptor.
(C) Since the exhaust hole is provided on the side surface on the processing gas region side, the processing gas can be efficiently exhausted from the exhaust pipe. In particular, the exhaust efficiency is improved as compared with the case where an exhaust hole is provided on the lower surface of the exhaust pipe.
(D) Since no exhaust hole is provided on the inert gas region side and the susceptor facing side, the processing gas can be efficiently exhausted from the exhaust hole on the processing gas region side.
(E) By connecting the first exhaust pipe and the second exhaust pipe and providing the second exhaust pipe with an exhaust port connected to the exhaust pump, an exhaust pump independent of the first exhaust pipe is provided. Exhaust efficiency can be improved with a simple configuration without providing, and the exhaust force from the first exhaust pipe can be sufficiently maintained even in the exhaust structure.
(F) Since the entire exhaust pipe can be supported by the lid by providing the first exhaust pipe in the lid, it is possible to prevent the pipe from being bent or deformed.
(G) By adopting a structure in which the connecting portion between the first exhaust pipe and the second exhaust pipe can be separated, the lid portion can be easily opened and maintenance can be easily performed.
(H) By providing the first exhaust pipe in the lid and the second exhaust pipe in the reaction vessel main body, the first exhaust pipe and the second exhaust pipe can be easily connected when the lid is closed. It can be connected, and maintainability can be greatly improved.
(I) By providing a conductance adjusting mechanism for adjusting the conductance of the connecting portion at the connecting portion between the first exhaust pipe and the second exhaust pipe, the amount of exhaust from the first exhaust hole can be easily adjusted. it can.

<Other Embodiments of the Present Invention>
Next, a second embodiment of the present invention will be described.
FIG. 17 is a schematic cross-sectional view in the first processing region 201a of the substrate processing apparatus 10 according to the second embodiment.
The second embodiment is different from the first embodiment only in the first exhaust holes formed in the first exhaust pipes 20 and 22 in the first embodiment.

  In the present embodiment, the first exhaust holes 20c and 22c are formed at positions where the substrate 200 does not pass below the position in the length direction of the first exhaust pipes 20 and 22 (that is, the radial direction of the susceptor 217). ing. That is, the first exhaust pipes 20 and 22 where the substrate 200 does not pass below, and a plurality of, for example, ellipse-shaped first surfaces on the side surfaces of the first processing region 201a side and the second processing region 201b side. One exhaust hole 20c, 22c is formed. As a result, the exhaust holes are not provided on the trajectory on which the substrate 200 moves as the susceptor 217 moves, so that by-products generated in the vicinity of the first exhaust holes 20c and 22c fall on the substrate 200. Can be suppressed.

  In addition, in FIG. 17, although the structure which has the two exhaust holes 20c and 22c in the 1st exhaust piping 20 and 22 was shown, it is not restricted to this but may be set to numbers (including one) other than two. Is possible. Further, in the present embodiment, the first exhaust holes 20c and 22c have an oval shape, but may have an oval shape, a circular shape, an angular shape, or the like. Similarly to the first embodiment, exhaust holes 20b and 22b for communicating with the second exhaust pipe 24 are formed in the lower surface of the outer end of the susceptor 217 of the first exhaust pipes 20 and 22. .

  As mentioned above, although one Embodiment of this invention was described, this invention is not limited to the above-mentioned one Embodiment, In the range which does not deviate from the summary, it can change variously.

Below, the aspect of this invention is described as an appendix.
<Appendix 1>
According to one aspect of the invention,
A processing chamber for processing the substrate;
A substrate mounting table provided in the processing chamber;
A rotation driving unit for rotating the substrate mounting table;
A substrate platform on which the substrate is placed, which is provided on the upper surface of the substrate platform and is disposed around the rotation center of the substrate platform;
An inert gas introduction part for introducing an inert gas into the processing chamber;
A processing gas introduction section for introducing a processing gas into the processing chamber;
The processing chamber is partitioned into an inert gas introduction region into which an inert gas is introduced and a processing gas introduction region into which a processing gas is introduced, and is disposed above the substrate mounting table so as to extend in the radial direction of the substrate mounting table. A first exhaust part provided and having a first exhaust hole on a side surface on the processing gas introduction region side;
A second exhaust part provided on an outer peripheral part of the substrate mounting table and having a second exhaust hole on an upper surface;
A substrate processing apparatus is provided.

<Appendix 2>
The substrate processing apparatus according to appendix 1, wherein the first exhaust unit has no exhaust hole in a side surface on the inert gas introduction region side and a surface facing the substrate mounting table.

<Appendix 3>
The first exhaust part is connected in communication with the second exhaust part at an outer peripheral part of the substrate mounting table, and the second exhaust part includes an exhaust port connected to an exhaust pump. A substrate processing apparatus according to 2, is provided.

<Appendix 4>
The processing chamber is formed by an openable and closable lid provided to face the substrate mounting table, and a processing container closed by the lid.
The first exhaust part is attached to be fixed to the lid part,
The second exhaust part is attached to be fixed to the processing container,
The connection part of the first exhaust part and the second exhaust part is formed to be separable,
A substrate processing apparatus according to attachment 3 is provided.

<Appendix 5>
A surface of the end portion of the first exhaust portion facing the substrate mounting table includes a first connection hole,
A surface facing the first connection hole of the second exhaust part is provided with a second connection hole,
In the state where the first exhaust part and the second exhaust part are connected, the first connection hole and the second connection hole are configured to contact and overlap each other,
The substrate processing apparatus according to appendix 4, wherein a sealing member for sealing (sealing) is provided at a connection part between the first exhaust part and the second exhaust part.

<Appendix 6>
The first exhaust hole is not provided on a trajectory on which the substrate placed on the substrate placement unit moves as the substrate placement table rotates, according to any one of appendices 1 to 5. A substrate processing apparatus is provided.

<Appendix 7>
The substrate processing apparatus according to any one of appendices 3 to 5, further comprising a conductance adjustment mechanism that changes a conductance of the connection portion at a connection portion between the first exhaust portion and the second exhaust portion. Is done.

<Appendix 8>
The substrate processing apparatus according to any one of appendices 1 to 7, wherein the first exhaust unit includes an opening area adjusting mechanism that changes an opening area of the first exhaust hole.

<Appendix 9>
According to another aspect of the invention,
A processing chamber for processing the substrate;
A substrate mounting table provided in the processing chamber;
A rotation driving unit for rotating the substrate mounting table;
A substrate platform on which the substrate is placed, which is provided on the upper surface of the substrate platform and is disposed around the rotation center of the substrate platform;
An inert gas introduction part for introducing an inert gas into the processing chamber;
A processing gas introduction section for introducing a processing gas into the processing chamber;
The processing chamber is partitioned into an inert gas introduction region into which an inert gas is introduced and a processing gas introduction region into which a processing gas is introduced, and is disposed above the substrate mounting table so as to extend in the radial direction of the substrate mounting table. A first exhaust part provided and having a first exhaust hole on a side surface on the processing gas introduction region side;
A second exhaust part provided on an outer peripheral part of the substrate mounting table and having a second exhaust hole on an upper surface;
A method of manufacturing a semiconductor device using a substrate processing apparatus having
Placing the substrate on the substrate platform;
Rotating the substrate mounting table;
The inert gas is introduced from the inert gas introduction part, the treatment gas is introduced from the treatment gas introduction part, and the treatment gas in the treatment chamber is introduced from the first exhaust hole and the second exhaust hole. Exhausting the air,
A method for manufacturing a semiconductor device and a substrate processing method are provided.

<Appendix 10>
The first exhaust part is communicated with the second exhaust part at an outer peripheral part of the substrate mounting table, and the second exhaust part has an exhaust port connected to an exhaust pump,
In the step of exhausting the processing gas in the processing chamber, the gas in the first exhaust unit and the second exhaust unit is provided in the second exhaust unit via an exhaust port connected to the exhaust pump. Exhaust the
A manufacturing method of a semiconductor device according to appendix 9, and a substrate processing method are provided.

<Appendix 11>
The semiconductor device manufacturing method and substrate processing method according to appendix 10, further comprising a step of changing conductance of a connection portion between the first exhaust portion and the second exhaust portion.

<Appendix 12>
According to another aspect of the invention,
A processing chamber for processing the substrate;
A substrate mounting table provided in the processing chamber;
A rotation driving unit for rotating the substrate mounting table;
A substrate platform on which the substrate is placed, which is provided on the upper surface of the substrate platform and is disposed around the rotation center of the substrate platform;
An inert gas introduction part for introducing an inert gas into the processing chamber;
A processing gas introduction section for introducing a processing gas into the processing chamber;
The processing chamber is partitioned into an inert gas introduction region into which an inert gas is introduced and a processing gas introduction region into which a processing gas is introduced, and is disposed above the substrate mounting table so as to extend in the radial direction of the substrate mounting table. A first exhaust part provided and having a first exhaust hole on a side surface on the processing gas introduction region side;
A second exhaust part provided on an outer peripheral part of the substrate mounting table and having a second exhaust hole on an upper surface;
In a substrate processing apparatus having
A procedure for placing the substrate on the substrate placing portion;
A procedure for rotating the substrate mounting table;
The inert gas is introduced from the inert gas introduction part, the treatment gas is introduced from the treatment gas introduction part, and the treatment gas in the treatment chamber is introduced from the first exhaust hole and the second exhaust hole. The procedure of exhausting
A computer-readable recording medium that records a program that causes a computer to execute is provided.

DESCRIPTION OF SYMBOLS 10 ... Substrate processing apparatus 20, 22 ... 1st exhaust pipe (1st exhaust part)
20a, 22a ... 1st exhaust hole 24 ...... 2nd exhaust piping (2nd exhaust part)
24a ... second exhaust hole 200 ... substrate 201a ... first processing area 201b ... second processing area 204a ... ... First purge area 204b ......... Second purge area

Claims (3)

A processing chamber for processing the substrate;
A substrate mounting table provided in the processing chamber;
A rotation driving unit for rotating the substrate mounting table;
A substrate platform on which the substrate is placed, which is provided on the upper surface of the substrate platform and is disposed around the rotation center of the substrate platform;
An inert gas introduction part for introducing an inert gas into the processing chamber;
A processing gas introduction section for introducing a processing gas into the processing chamber;
The processing chamber is partitioned into an inert gas introduction region into which an inert gas is introduced and a processing gas introduction region into which a processing gas is introduced, and is disposed above the substrate mounting table so as to extend in the radial direction of the substrate mounting table. A first exhaust part provided and having a first exhaust hole on a side surface on the processing gas introduction region side;
A second exhaust part provided on an outer peripheral part of the substrate mounting table and having a second exhaust hole on an upper surface;
A substrate processing apparatus. A processing chamber for processing the substrate;
A substrate mounting table provided in the processing chamber;
A rotation driving unit for rotating the substrate mounting table;
A substrate platform on which the substrate is placed, which is provided on the upper surface of the substrate platform and is disposed around the rotation center of the substrate platform;
An inert gas introduction part for introducing an inert gas into the processing chamber;
A processing gas introduction section for introducing a processing gas into the processing chamber;
The processing chamber is partitioned into an inert gas introduction region into which an inert gas is introduced and a processing gas introduction region into which a processing gas is introduced, and is disposed above the substrate mounting table so as to extend in the radial direction of the substrate mounting table. A first exhaust part provided and having a first exhaust hole on a side surface on the processing gas introduction region side;
A second exhaust part provided on an outer peripheral part of the substrate mounting table and having a second exhaust hole on an upper surface;
A method of manufacturing a semiconductor device using a substrate processing apparatus having
Placing the substrate on the substrate platform;
Rotating the substrate mounting table;
The inert gas is introduced from the inert gas introduction part, the treatment gas is introduced from the treatment gas introduction part, and the treatment gas in the treatment chamber is introduced from the first exhaust hole and the second exhaust hole. Exhausting the air,
A method for manufacturing a semiconductor device comprising: A processing chamber for processing the substrate;
A substrate mounting table provided in the processing chamber;
A rotation driving unit for rotating the substrate mounting table;
A substrate platform on which the substrate is placed, which is provided on the upper surface of the substrate platform and is disposed around the rotation center of the substrate platform;
An inert gas introduction part for introducing an inert gas into the processing chamber;
A processing gas introduction section for introducing a processing gas into the processing chamber;
The processing chamber is partitioned into an inert gas introduction region into which an inert gas is introduced and a processing gas introduction region into which a processing gas is introduced, and is disposed above the substrate mounting table so as to extend in the radial direction of the substrate mounting table. A first exhaust part provided and having a first exhaust hole on a side surface on the processing gas introduction region side;
A second exhaust part provided on an outer peripheral part of the substrate mounting table and having a second exhaust hole on an upper surface;
In a substrate processing apparatus having
A procedure for placing the substrate on the substrate placing portion;
A procedure for rotating the substrate mounting table;
The inert gas is introduced from the inert gas introduction part, the treatment gas is introduced from the treatment gas introduction part, and the treatment gas in the treatment chamber is introduced from the first exhaust hole and the second exhaust hole. The procedure of exhausting
A program that causes a computer to execute.

Images