KR20150055558A - 이물의 검출 방법, 이물의 검출 장치, 노광 방법, 및 디바이스의 제조 방법 - Google Patents

이물의 검출 방법, 이물의 검출 장치, 노광 방법, 및 디바이스의 제조 방법 Download PDF

Info

Publication number
KR20150055558A
KR20150055558A KR1020140153026A KR20140153026A KR20150055558A KR 20150055558 A KR20150055558 A KR 20150055558A KR 1020140153026 A KR1020140153026 A KR 1020140153026A KR 20140153026 A KR20140153026 A KR 20140153026A KR 20150055558 A KR20150055558 A KR 20150055558A
Authority
KR
South Korea
Prior art keywords
substrate
chuck
foreign object
determined
surface state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1020140153026A
Other languages
English (en)
Korean (ko)
Inventor
다다오 나카무라
유지 고스기
도모히사 나카자와
Original Assignee
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20150055558A publication Critical patent/KR20150055558A/ko
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/94—Investigating contamination, e.g. dust
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06—Systems determining position data of a target
    • G01S17/46—Indirect determination of position data
    • G01S17/48—Active triangulation systems, i.e. using the transmission and reflection of electromagnetic waves other than radio waves

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Atmospheric Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020140153026A 2013-11-13 2014-11-05 이물의 검출 방법, 이물의 검출 장치, 노광 방법, 및 디바이스의 제조 방법 Abandoned KR20150055558A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2013-235385 2013-11-13
JP2013235385A JP6343140B2 (ja) 2013-11-13 2013-11-13 異物の検出方法および検出装置、露光方法、ならびに、デバイスの製造方法

Publications (1)

Publication Number Publication Date
KR20150055558A true KR20150055558A (ko) 2015-05-21

Family

ID=53043556

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020140153026A Abandoned KR20150055558A (ko) 2013-11-13 2014-11-05 이물의 검출 방법, 이물의 검출 장치, 노광 방법, 및 디바이스의 제조 방법

Country Status (3)

Country Link
US (1) US9599903B2 (enExample)
JP (1) JP6343140B2 (enExample)
KR (1) KR20150055558A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12585203B2 (en) 2022-09-14 2026-03-24 Canon Kabushiki Kaisha Determining apparatus, pattern forming apparatus, and method for manufacturing article

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190121230A1 (en) * 2016-04-27 2019-04-25 Asml Holding N.V. Image processing convolution algorithm for defect detection
JP6638796B2 (ja) * 2018-11-06 2020-01-29 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08110586A (ja) * 1994-10-12 1996-04-30 Hitachi Ltd 露光装置
JPH09266157A (ja) * 1996-03-28 1997-10-07 Nec Corp 縮小投影露光方法およびその装置
JP2002164270A (ja) * 2000-11-27 2002-06-07 Seiko Epson Corp 露光装置
JP2002237452A (ja) * 2001-12-17 2002-08-23 Nikon Corp 投影露光方法及び装置、デバイス製造方法、並びに該方法により製造されたデバイス
JP2005079449A (ja) * 2003-09-02 2005-03-24 Nikon Corp パターン不良予測装置、基板処理システム、パターン不良予測プログラム、及び情報記録媒体
EP1808884A4 (en) 2004-10-13 2009-12-30 Nikon Corp EXPOSURE DEVICE, EXPOSURE METHOD AND COMPONENT MANUFACTURING METHOD
JP4961709B2 (ja) 2004-10-13 2012-06-27 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
JP2006128346A (ja) * 2004-10-28 2006-05-18 Tokyo Seimitsu Co Ltd 露光装置、異物検出方法、異物位置特定方法及び露光方法
JP2008140814A (ja) 2006-11-30 2008-06-19 Matsushita Electric Ind Co Ltd 露光装置及び露光方法
JP2008282885A (ja) * 2007-05-08 2008-11-20 Canon Inc 露光装置及びデバイス製造方法
JP2010016256A (ja) * 2008-07-04 2010-01-21 Nikon Corp 異物検出方法、露光方法、及びデバイス製造方法
JP2010141210A (ja) * 2008-12-12 2010-06-24 Nikon Corp クリーニング工具、クリーニング方法、及びデバイス製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12585203B2 (en) 2022-09-14 2026-03-24 Canon Kabushiki Kaisha Determining apparatus, pattern forming apparatus, and method for manufacturing article

Also Published As

Publication number Publication date
JP2015095602A (ja) 2015-05-18
US20150131065A1 (en) 2015-05-14
US9599903B2 (en) 2017-03-21
JP6343140B2 (ja) 2018-06-13

Similar Documents

Publication Publication Date Title
US8174669B2 (en) Liquid immersion optical tool, method for cleaning liquid immersion optical tool, liquid immersion exposure method and method for manufacturing semiconductor device
US7414794B2 (en) Optical arrangement of autofocus elements for use with immersion lithography
TWI297815B (en) Exposure apparatus and method
TWI508130B (zh) An exposure apparatus, an element manufacturing method, a cleaning method, and a cleaning member
JP5264504B2 (ja) 洗浄用液体、洗浄方法、液体発生装置、露光装置、及びデバイス製造方法
TWI436403B (zh) A cleaning method, a substrate processing method, an exposure apparatus, and an element manufacturing method
JP5446875B2 (ja) 露光装置、露光方法及びデバイス製造方法
US8059257B2 (en) Exposure apparatus and device manufacturing method
TW200421443A (en) Exposure apparatus and device manufacturing method
TWI620990B (zh) Substrate transfer device, substrate transfer method, exposure device, exposure method, and device manufacturing method
US20060082749A1 (en) Exposure apparatus, exposure method, and device fabrication method
US9599903B2 (en) Foreign substance detection method, foreign substance detection apparatus, exposure method, and method of manufacturing device
JP2009016422A (ja) クリーニング装置、露光装置、デバイス製造方法、及びクリーニング方法
JP5861642B2 (ja) 露光装置、露光方法、露光装置のメンテナンス方法、露光装置の調整方法、デバイス製造方法、及びダミー基板
US20120062859A1 (en) Polishing device, polishing method, exposure apparatus and device manufacturing method
JP2012009668A (ja) チタン含有部材の製造方法、チタン含有部材、露光装置及びデバイス製造方法
TWI430040B (zh) Analytical method, exposure method and component manufacturing method
JP2010267808A (ja) 露光装置、クリーニング方法、及びデバイス製造方法
JP2010016256A (ja) 異物検出方法、露光方法、及びデバイス製造方法
JP2011108735A (ja) 洗浄部材、露光装置、洗浄方法、及びデバイス製造方法
JP2011003835A (ja) 露光装置、露光方法、及びデバイス製造方法
JP2010147448A (ja) 露光装置およびデバイス製造方法
KR20040008435A (ko) 투영렌즈 오염측정장치가 구비된 노광설비
JP2010135683A (ja) 露光装置及びデバイス製造方法
JP2006332639A (ja) 露光方法及び露光装置、並びにデバイス製造方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T13-X000 Administrative time limit extension granted

St.27 status event code: U-3-3-T10-T13-oth-X000

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PX0901 Re-examination

St.27 status event code: A-2-3-E10-E12-rex-PX0901

E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PX0701 Decision of registration after re-examination

St.27 status event code: A-3-4-F10-F13-rex-PX0701

X701 Decision to grant (after re-examination)
PC1904 Unpaid initial registration fee

St.27 status event code: A-2-2-U10-U13-oth-PC1904

St.27 status event code: N-2-6-B10-B12-nap-PC1904

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000