KR20140068474A - 기판 분리 방법 및 이를 이용한 발광 다이오드 칩 제조 방법 - Google Patents
기판 분리 방법 및 이를 이용한 발광 다이오드 칩 제조 방법 Download PDFInfo
- Publication number
- KR20140068474A KR20140068474A KR1020120136005A KR20120136005A KR20140068474A KR 20140068474 A KR20140068474 A KR 20140068474A KR 1020120136005 A KR1020120136005 A KR 1020120136005A KR 20120136005 A KR20120136005 A KR 20120136005A KR 20140068474 A KR20140068474 A KR 20140068474A
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- layer
- semiconductor structure
- forming
- structure regions
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 156
- 238000000034 method Methods 0.000 title claims abstract description 83
- 239000004065 semiconductor Substances 0.000 claims abstract description 158
- 238000000059 patterning Methods 0.000 claims abstract description 30
- 238000003486 chemical etching Methods 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims description 41
- 229910052751 metal Inorganic materials 0.000 claims description 41
- 239000002184 metal Substances 0.000 claims description 41
- 230000004888 barrier function Effects 0.000 claims description 17
- 238000002955 isolation Methods 0.000 claims description 15
- 238000002161 passivation Methods 0.000 claims description 11
- 230000003746 surface roughness Effects 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000000926 separation method Methods 0.000 abstract description 33
- 239000000243 solution Substances 0.000 description 35
- 238000004519 manufacturing process Methods 0.000 description 25
- 239000000126 substance Substances 0.000 description 10
- 229910002601 GaN Inorganic materials 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 230000035515 penetration Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020120136005A KR20140068474A (ko) | 2012-11-28 | 2012-11-28 | 기판 분리 방법 및 이를 이용한 발광 다이오드 칩 제조 방법 |
| PCT/KR2013/009289 WO2014084500A1 (fr) | 2012-11-28 | 2013-10-17 | Procédé de séparation d'un substrat et procédé de fabrication d'une puce de diode électroluminescente l'utilisant |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020120136005A KR20140068474A (ko) | 2012-11-28 | 2012-11-28 | 기판 분리 방법 및 이를 이용한 발광 다이오드 칩 제조 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20140068474A true KR20140068474A (ko) | 2014-06-09 |
Family
ID=50828091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020120136005A KR20140068474A (ko) | 2012-11-28 | 2012-11-28 | 기판 분리 방법 및 이를 이용한 발광 다이오드 칩 제조 방법 |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR20140068474A (fr) |
| WO (1) | WO2014084500A1 (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200026618A (ko) * | 2018-09-03 | 2020-03-11 | 엘지이노텍 주식회사 | 발광소자 패키지 |
| WO2020122697A3 (fr) * | 2020-03-27 | 2021-02-11 | 엘지전자 주식회사 | Procédé de production d'un appareil d'affichage comprenant des éléments électroluminescents semi-conducteurs |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11588082B2 (en) | 2017-12-19 | 2023-02-21 | PlayNitride Inc. | Micro device and micro device display apparatus |
| TWI660448B (zh) | 2017-12-19 | 2019-05-21 | 英屬開曼群島商錼創科技股份有限公司 | 微型元件結構 |
| CN107946426B (zh) * | 2017-12-20 | 2020-03-31 | 大连德豪光电科技有限公司 | Led芯片制作方法和led芯片 |
| CN114300587B (zh) * | 2021-12-29 | 2023-08-18 | 江苏第三代半导体研究院有限公司 | 一种micro LED的制备方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7244628B2 (en) * | 2003-05-22 | 2007-07-17 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating semiconductor devices |
| KR20060131327A (ko) * | 2005-06-16 | 2006-12-20 | 엘지전자 주식회사 | 발광 다이오드의 제조 방법 |
| KR100757802B1 (ko) * | 2006-09-29 | 2007-09-11 | 서울옵토디바이스주식회사 | 수직형 발광 다이오드 및 그 제조방법 |
| KR101272706B1 (ko) * | 2006-12-28 | 2013-06-10 | 서울옵토디바이스주식회사 | 양극 알루미늄산화층을 이용하여 패턴된 반도체층을 갖는수직형 발광 다이오드 및 그 제조방법 |
| KR101316121B1 (ko) * | 2007-03-06 | 2013-10-11 | 서울바이오시스 주식회사 | 수직형 발광 다이오드의 제조방법 |
-
2012
- 2012-11-28 KR KR1020120136005A patent/KR20140068474A/ko not_active Application Discontinuation
-
2013
- 2013-10-17 WO PCT/KR2013/009289 patent/WO2014084500A1/fr active Application Filing
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200026618A (ko) * | 2018-09-03 | 2020-03-11 | 엘지이노텍 주식회사 | 발광소자 패키지 |
| WO2020122697A3 (fr) * | 2020-03-27 | 2021-02-11 | 엘지전자 주식회사 | Procédé de production d'un appareil d'affichage comprenant des éléments électroluminescents semi-conducteurs |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2014084500A1 (fr) | 2014-06-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8242530B2 (en) | Light emitting device and method for fabricating the same | |
| TWI559573B (zh) | 發光二極體 | |
| KR20150072066A (ko) | 반도체 성장용 템플릿, 성장 기판 분리 방법 및 이를 이용한 발광소자 제조 방법 | |
| KR20140068474A (ko) | 기판 분리 방법 및 이를 이용한 발광 다이오드 칩 제조 방법 | |
| KR20100035846A (ko) | 발광 소자 및 그 제조방법 | |
| KR20110049799A (ko) | 양면 패시베이션을 갖는 반도체 발광 디바이스 제작 방법 | |
| US20130062657A1 (en) | Light emitting diode structure and manufacturing method thereof | |
| WO2015141166A1 (fr) | Dispositif électroluminescent semi-conducteur et son procédé de fabrication | |
| KR101969308B1 (ko) | 반도체 발광소자 및 그 제조 방법 | |
| US9048348B2 (en) | Method of separating substrate and method of fabricating semiconductor device using the same | |
| KR100986963B1 (ko) | 발광 소자 및 그 제조방법 | |
| KR20150012538A (ko) | 발광 소자 제조 방법 | |
| KR20160043868A (ko) | 수직형 반도체 발광소자 및 그 제조 방법 | |
| KR20110085726A (ko) | 반도체 발광소자 및 이를 제조하는 방법 | |
| KR20150074516A (ko) | 기판 분리 방법 및 이를 이용한 발광소자 제조 방법 | |
| KR20140140803A (ko) | 발광 소자 및 그 제조 방법 | |
| KR101316121B1 (ko) | 수직형 발광 다이오드의 제조방법 | |
| KR20140085198A (ko) | 마스크 패턴을 이용한 기판 분리 방법 및 반도체 소자 제조 방법 | |
| KR20140047870A (ko) | 성장 기판 분리 방법, 발광 다이오드 제조 방법 및 그것에 의해 제조된 발광 다이오드 | |
| KR20140074040A (ko) | 발광 다이오드 및 그것을 제조하는 방법 | |
| KR20140079958A (ko) | 기판 분리 방법 및 이를 이용한 반도체 소자 제조 방법 | |
| KR20140058080A (ko) | 발광 다이오드 및 그것을 제조하는 방법 | |
| KR20140123318A (ko) | 응력을 이용한 성장 기판 분리 방법 및 반도체 소자 제조 방법 | |
| KR20140077476A (ko) | 마스크 패턴 형성 방법, 이를 이용한 기판 분리 방법 및 반도체 소자 제조 방법 | |
| KR20150016759A (ko) | 발광 소자 제조용 템플릿 재생 방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |