KR20140065133A - Buffer stage and die bonder including the same - Google Patents

Buffer stage and die bonder including the same Download PDF

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Publication number
KR20140065133A
KR20140065133A KR1020120132291A KR20120132291A KR20140065133A KR 20140065133 A KR20140065133 A KR 20140065133A KR 1020120132291 A KR1020120132291 A KR 1020120132291A KR 20120132291 A KR20120132291 A KR 20120132291A KR 20140065133 A KR20140065133 A KR 20140065133A
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KR
South Korea
Prior art keywords
die
vacuum
porous chuck
buffer stage
wafer
Prior art date
Application number
KR1020120132291A
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Korean (ko)
Other versions
KR101422355B1 (en
Inventor
정연혁
김동진
장승호
조성희
김재용
Original Assignee
세메스 주식회사
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Priority to KR1020120132291A priority Critical patent/KR101422355B1/en
Publication of KR20140065133A publication Critical patent/KR20140065133A/en
Application granted granted Critical
Publication of KR101422355B1 publication Critical patent/KR101422355B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

Abstract

A die bonding device having a buffer stage comprises: a wafer stage for supporting a wafer divided into multiple dies; a porous chuck arranged in one side of the wafer stage and formed of porous substances to place the dies separated from the wafers thereon and to adsorb the dies with vacuum pressure; a buffer stage capable of placing the porous chuck thereon and having a panel on which a pneumatic pipe for providing the vacuum pressure through the porous chuck is arranged; and a die transfer part for transferring the dies from the wafers to the buffer stage and also transferring the dies to bond the dies on the buffer stage to a substrate. One or more vacuum holes are arranged in the porous chuck. A vacuum sensor for measuring the degree of vacuum is arranged in the pneumatic pipe.

Description

[0001] The present invention relates to a buffer stage and a die bonding apparatus including the buffer stage.

Embodiments of the present invention relate to a buffer stage and a die bonding apparatus including the buffer stage. More particularly, the present invention relates to a buffer stage in which a die separated from a wafer is supported, and a die bonding apparatus including the buffer stage.

Generally, in the die bonding process, a pick-up unit that picks up and transports the dies from a wafer to bond individualized dies to the substrate through a sawing process can be used. The pick-up unit may include a collet for picking up the die using the vacuum, a pick-up head to which the collet is coupled, and a drive unit for moving the pick-up head.

In particular, a wafer divided into a plurality of dies may be provided attached to the dicing tape, and the wafer attached to the dicing tape may be supported on the stage. One side of the stage may be provided with a buffer stage supported by a die separated from the wafer, and the buffer stage may be used for alignment of the die.

The pick-up unit moves the die from the wafer onto the buffer stage and also moves the die from the buffer stage onto the substrate to bond the die onto a substrate disposed in the bonding area. Examples of such buffer stages are disclosed in Korean Patent Laid-Open Nos. 10-2006-0019883 and 10-2007-0037824, and the like in a die stage and an alignment stage.

On the other hand, a chuck may be provided on the buffer stage to support the die and adsorb it using vacuum. This is to ensure that the position of the die is not changed while moving the buffer stage to be adjacent to the bonding area after the die is placed in the buffer stage.

However, when the type of the die to be bonded is changed, the scale must be replaced according to the size of the die, and it takes a considerable time to replace the chuck, so that the operating rate of the die bonding apparatus is greatly reduced.

Embodiments of the present invention are intended to provide a buffer stage having a chuck that does not need to be replaced even when the die to be bonded in the die bonding process is changed.

Embodiments of the present invention also have another object to provide a die bonding apparatus including the buffer stage as described above.

According to embodiments of the present invention, the buffer stage comprises a porous stage in which a die separated from the wafer is placed in a die bonding process, and a porous chuck made of a porous material for adsorbing the die in vacuum, And a panel provided with a pneumatic piping for providing a vacuum, wherein the porous chuck may be provided with at least one vacuum hole.

According to embodiments of the present invention, the porous chuck may be disposed at a central portion of the panel, and a plurality of collet receiving grooves may be provided at edge portions of the panel to accommodate collets for picking up the die .

According to embodiments of the present invention, the panel may have an opening formed through a collet for picking up the die and a pick-up head for holding the collet using a magnetic force, and both inner sides of the opening And the engaging members for removing the collet from the pick-up head while the collet moves upward can be provided.

According to the embodiments of the present invention, the upper surface of the panel may be provided with a first recess into which the porous chuck is inserted, and a lower surface of the first recess is provided with a second A recess may be provided. At this time, the pneumatic piping may be connected to the second recess.

According to embodiments of the present invention, a vacuum sensor for measuring the degree of vacuum inside the pneumatic piping may be further provided.

According to embodiments of the present invention, the upper surface area of the porous chuck may be larger than the die.

According to embodiments of the present invention, a die bonding apparatus includes a wafer stage for supporting a wafer divided into a plurality of dies, a die disposed on one side of the wafer stage, a die separated from the wafer being placed, A buffer stage including a porous chuck made of a porous material for adsorbing in vacuum and a panel provided with the porous chuck and a pneumatic piping for providing vacuum through the porous chuck; And a die transferring portion for transferring the die to bond the die on the buffer stage onto the substrate. At this time, the porous chuck may be provided with at least one vacuum hole.

According to the embodiments of the present invention, a vacuum sensor for measuring the degree of vacuum inside the pneumatic piping, and a control unit for determining the presence or absence of the die on the porous chuck based on the degree of vacuum measured by the vacuum sensor .

According to embodiments of the present invention as described above, the buffer stage may include a porous chuck for supporting the die transferred by the die transfer part and a panel on which the porous chuck is disposed. Particularly, since the upper area of the porous chuck can be made larger than the die to be bonded, it is unnecessary to replace the porous chuck even when the size of the die to be bonded is changed. Accordingly, the operating rate of the die bonding apparatus including the buffer stage Can be greatly increased.

In addition, a vacuum sensor may be provided in the pneumatic piping connected to the porous chuck, and separate vacuum holes may be provided in the central portion of the porous chuck. As a result, the presence or absence of the die on the porous chuck using the vacuum degree measured through the vacuum sensor can be performed more quickly and accurately.

1 is a schematic cross-sectional view illustrating a buffer stage according to an embodiment of the present invention.
Fig. 2 is a schematic plan view for explaining the buffer stage shown in Fig. 1. Fig.
FIG. 3 is a schematic structural view illustrating a die bonding apparatus including the buffer stage shown in FIG. 1. FIG.
4 is a schematic plan view for explaining a die bonding apparatus including the buffer stage shown in FIG.
5 is a schematic cross-sectional view for explaining the porous chuck shown in Fig.
FIG. 6 is a schematic structural view illustrating the pick-up units of the die transferring unit shown in FIG. 3. FIG.

Hereinafter, a head replacement apparatus and a die bonding system including the head replacement apparatus according to embodiments of the present invention will be described in detail with reference to the accompanying drawings. The present invention is capable of various modifications and various forms, and specific embodiments are illustrated in the drawings and described in detail in the text. It should be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. Like reference numerals are used for like elements in describing each drawing. In the accompanying drawings, the dimensions of the structures are enlarged to illustrate the present invention in order to clarify the present invention.

The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.

The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In this application, the terms "comprises", "having", and the like are used to specify that a feature, a number, a step, an operation, an element, a part or a combination thereof is described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof.

Unless defined otherwise, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.

FIG. 1 is a schematic cross-sectional view for explaining a buffer stage according to an embodiment of the present invention, and FIG. 2 is a schematic plan view for explaining a buffer stage shown in FIG. FIG. 3 is a schematic structural view for explaining a die bonding apparatus including the buffer stage shown in FIG. 1, and FIG. 4 is a schematic plan view for explaining a die bonding apparatus including the buffer stage shown in FIG. 1 .

1 to 4, a buffer stage 100 and a die bonding apparatus 1 including the buffer stage 100 according to an embodiment of the present invention pick up a die 20 from a wafer 10, For example.

The die bonding apparatus 1 may include a die transfer section 200 for picking up and transferring the die 20 from the wafer 10 divided into a plurality of dies 20. [ The die transfer unit 200 includes a first transfer unit 210 for transferring the die 20 from the wafer 10 to the buffer stage 100 and a second transfer unit 210 for transferring the die 20 onto the substrate 50 And a second transfer unit 220 for transferring the die 20 from the buffer stage 100 onto the substrate 50 for bonding. Alternatively, however, the die transfer portion 200 may be configured to transfer the die 20 from the wafer 10 to the buffer stage 100 and from the buffer stage 100 to the substrate (not shown) using one transfer unit. 50).

The wafer 10 may be provided with the plurality of dies 20 attached to the dicing tape 30. For example, the dicing tape 30 may be mounted on a mounting ring 40 in the form of a generally circular ring, and the die bonding apparatus 1 may include a wafer stage 300 for supporting the wafer 10, . ≪ / RTI >

A clamp 310 for gripping the mounting frame 40 may be provided on the wafer stage 300 and the dicing tape 30 may be provided on the wafer stage 310. The clamping 310 may be provided on the wafer stage 300, Lt; / RTI > In particular, the extension ring 320 can support the edge portion of the dicing tape 30 between the wafer 10 and the mounting frame 40. The clamp 310 supports the dicing tape 30, The mounting frame 40 can be moved downward to expand the mounting frame 40. [ Although not shown in detail, a clamp driving unit (not shown) for moving the clamp 310 in the vertical direction may be mounted on the wafer stage 300, and the dicing tape 30 may be extended, The distance between the first and second electrodes 20 can be enlarged.

A lower portion of the wafer stage 300 may be provided with a die ejector 400 for selectively lifting the dies 20 to separate the dies 20 from the dicing tape 30, The die 20 lifted by the die ejector 400 can be picked up by the die feeder 200 and then transferred. To this end, the wafer stage 300 may have an opening for operation of the die ejector 400, as shown.

The buffer stage 100 may be disposed on one side of the wafer stage 300 and may be used for alignment of the die 20 separated from the wafer 10. In particular, the buffer stage 100 can be moved horizontally by a separate driving unit 102 and configured to be rotatable. For example, the die 20 supported on the buffer stage 100 can be imaged through an upper camera (not shown) and the buffer stage 100 can be used to image the die 20, Can be performed. The buffer stage 100 may further include a bonding region of the die 20 for the bonding process of the die 20 after the die 20 is placed on one side of the wafer stage 300, May be moved by the driving unit 102 so as to be adjacent to the positioned area.

Although not shown, the die bonding apparatus 1 may include a substrate transfer unit (not shown) for transferring the substrate 500, and the die (not shown) may be mounted on the substrate 50 transferred by the substrate transfer unit. 20 may be bonded. The die bonding region may be located on the transport path of the substrate 50.

The buffer stage 100 may include a porous chuck 110 on which the die 20 is placed and a panel 120 on which the porous chuck 110 is disposed. The panel 120 may be provided with a pneumatic piping 130 for providing vacuum to the porous chuck 110 to attract the die 20 placed on the porous chuck 110. For example, the porous chuck 110 may be disposed at a central portion of the panel 120.

5 is a schematic cross-sectional view for explaining the porous chuck shown in Fig.

According to an embodiment of the present invention, as shown in FIG. 5, a first recess 122 into which the porous chuck 110 is inserted may be provided at a central portion of an upper surface of the panel 120, The bottom of the first recess 122 may be provided with a second recess 124 which is covered by the porous chuck 110 at the top. At this time, the pneumatic piping 130 may be connected to the second recess 124 as shown in FIG.

Although not shown in detail, the pneumatic piping 124 may be connected to the vacuum system 150, and the second recess 124 may be covered by the porous chuck 110, have. Therefore, the die 20 placed on the porous chuck 110 can be adsorbed on the porous chuck 110 by the vacuum force provided through the porous chuck 110. [ At this time, the porous chuck 110 may be configured to be larger than the size of the die 20, so that it is not necessary to exchange the porous chuck 110 even when the size of the die to be bonded is changed.

A vacuum sensor 140 may be connected to the pneumatic piping 130. The pressure inside the pneumatic piping 130, that is, the pressure inside the vacuum chamber 130 may be measured by the vacuum sensor 140. Although not shown, the vacuum sensor 140 can be connected to a control unit (not shown), and the control unit can control the degree of vacuum of the die 20 on the porous chuck 110 according to the degree of vacuum measured by the vacuum sensor 140 It is possible to judge whether or not it is placed.

According to an embodiment of the present invention, at least one vacuum hole 112 may be separately provided in a central portion of the porous chuck 110. Although the four vacuum holes 112 are provided, the number of the vacuum holes 112 may be variously changed, so that the scope of the present invention is not limited thereto. The vacuum holes 112 may be used to facilitate the determination of the presence or absence of the die 20. That is, in the case where the vacuum holes 112 are not used, the degree of vacuum that varies depending on the presence or absence of the die 20 when the vacuum holes 112 are used, The presence or absence of the die 20 can be more easily determined because the difference is relatively large.

FIG. 6 is a schematic structural view illustrating the pick-up units of the die transferring unit shown in FIG. 3. FIG.

6, the first pick-up unit 210 of the die transfer unit 200 may include a pick-up head 212 and a collet 214 attached to the pick-up head 212, May be attached to the pick-up head 212 using a magnetic force. Particularly, the collet 214 may be provided with a plurality of suction holes 214A for sucking the die 20, and the pick-up head 212 may be provided with a separate A pneumatic piping 212A may be provided. Also, although not shown, the first pick-up unit 210 can be moved horizontally and vertically by a separate driving unit 230 as shown in FIG.

As an example, the collet 214 may have a generally rectangular shape and may include a hard upper pad 214B and a soft lower pad 214C. The pick-up head 212 may be provided with a permanent magnet 216 for mounting the collet 214, and the upper pad 214B may be formed of a magnetic material. In addition, guide members 212B for guiding the attachment position of the collet 214 may be provided at lower edge portions of the pick-up head 212.

1 and 2, the panel 120 may have a substantially circular disk shape, and a collet removing unit 160 for replacing the collet 214 may be provided at an edge of the panel 120. [ And collet receiving grooves 170 for accommodating the plurality of collets 214. The collet receiving grooves 170 may be formed in the same manner as in the first embodiment. For example, the collet removing part 160 and the collet receiving grooves 170 may be arranged in the circumferential direction of the panel 120, and the collets may be held in the respective collet receiving grooves 170, A permanent magnet 172 may be disposed.

The collet removing unit 160 includes an opening 162 configured to allow the pickup head 212 and the collet 214 to pass therethrough and an engaging member 164 provided on both inner sides of the opening 162 can do. For example, the first pick-up unit 210 may be moved downward through the opening 162 and then upwardly through the opening 162. At this time, the latching members 164 may allow the downward movement and the upward movement of the pick-up head 212, but the downward movement of the collet 214 may be permitted but the upward movement may be limited. As a result, the engagement members 164 can separate the collet 214 from the pick-up head 212 while the pick-up head 212 is moved upward through the opening 162.

As an example, the latching members 164 may be mounted on the inner side surfaces of the opening 162 so as to be rotatable downward by a spring (not shown), for example, a coil spring or a torsion spring . The locking members 164 may be rotated downward to allow the downward movement of the collet 214 but may return to the initial position by the spring after the collet 214 has been passed downward, Can be restricted. Alternatively, the latching members 164 may be installed to be movable from the inner side of the opening 162 using a spring.

Although not shown, recesses may be provided on both sides of the pick-up head 212, and the recesses 164 may be formed by the recesses in the vertical movement of the pick- Can be prevented. The collet 214 removed from the pick-up head 212 as described above may be recovered by the container 180 disposed under the opening 162.

After the collet 214 is removed as described above, the pick-up head 212 can be moved to mount one of the collets 214 received in the collet receiving grooves 170, respectively. At this time, one of the collets 214 may be mounted to the pick-up head 212 by the magnetic force of the permanent magnet 216. The collet replacement method as described above has been described in detail in Korean Patent Application No. 10-2012-0121573 and No. 10-2012-0121592 filed by the present applicant, and a further explanation will be omitted.

The configuration of the second pick-up unit 220 may be substantially the same as the configuration of the first pick-up unit 210, and the collet of the second pick- ). ≪ / RTI > Further, as described above, the die transfer section 200 may transfer the die 20 using one pick-up unit.

According to embodiments of the present invention as described above, the buffer stage 100 includes a porous chuck 110 for supporting the die 20 transferred by the die transferring unit 200, (Not shown). Particularly, since the upper surface area of the porous chuck 110 can be larger than that of the bonding target die, the replacement of the porous chuck 110 is unnecessary even when the size of the die to be bonded changes, The operating rate of the die bonding apparatus 1 including the semiconductor die 100 can be greatly increased.

A vacuum sensor 140 may be provided on the pneumatic piping 130 connected to the porous chuck 110. Vacuum holes 112 may be formed in the center of the porous chuck 110 . As a result, the presence or absence of the die 20 on the porous chuck 110 using the vacuum degree measured through the vacuum sensor 140 can be performed more quickly and accurately.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the present invention as defined by the following claims. It can be understood that it is possible.

1: die bonding device 10: wafer
20: die 100: buffer stage
110: Porous chuck 112: Vacuum hole
120: Panel 130: Pneumatic piping
140: Vacuum sensor 150: Vacuum system
200: die transfer part 300: wafer stage
400: die ejector

Claims (8)

A porous chuck made of a porous material for placing a die separated from a wafer in a die bonding process and adsorbing the die in vacuum; And
A panel having a porous chuck disposed therein and having a pneumatic piping for providing vacuum through the porous chuck, wherein the porous chuck is provided with at least one vacuum hole. The buffer stage according to claim 1, wherein the porous chuck is disposed at a central portion of the panel, and a plurality of collet receiving grooves are provided at edge portions of the panel, each collet for picking up the die. The apparatus of claim 1, wherein the panel has a collet for picking up the die and an opening formed through the pick-up head for holding the collet by using a magnetic force, Wherein the clamping members are provided for removing the collet from the pick-up head while moving upwardly. [2] The plasma display panel of claim 1, wherein the upper surface of the panel is provided with a first recess into which the porous chuck is inserted, and a second recess is provided on the lower surface of the first recess, And said pneumatic piping is connected to said second recess. The buffer stage according to claim 1, further comprising a vacuum sensor for measuring a degree of vacuum inside the pneumatic piping. The buffer stage of claim 1, wherein the upper area of the porous chuck is larger than the die. A wafer stage for supporting a wafer divided into a plurality of dies;
A porous chuck disposed on one side of the wafer stage and made of a porous material for placing a die separated from the wafer and for adsorbing the die by vacuum; A buffer stage including a panel provided with a pipe; And
And a die transferring portion for transferring the die from the wafer to the buffer stage and transferring the die to bond the die on the buffer stage onto the substrate, characterized in that the porous chuck is provided with at least one vacuum hole . The apparatus of claim 7, further comprising: a vacuum sensor for measuring a degree of vacuum inside the pneumatic piping; And
And a control unit for determining the presence or absence of the die on the porous chuck based on the degree of vacuum measured by the vacuum sensor.
KR1020120132291A 2012-11-21 2012-11-21 Buffer stage and die bonder including the same KR101422355B1 (en)

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KR1020120132291A KR101422355B1 (en) 2012-11-21 2012-11-21 Buffer stage and die bonder including the same

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KR101422355B1 KR101422355B1 (en) 2014-07-22

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150142717A (en) * 2014-06-11 2015-12-23 세메스 주식회사 Apparatus for exchanging a collet and a hood
KR20150142716A (en) * 2014-06-11 2015-12-23 세메스 주식회사 Apparatus for exchanging a collet and a hood
KR20160021520A (en) * 2014-08-18 2016-02-26 세메스 주식회사 Apparatus for exchanging a collet and a hood
KR20170137329A (en) * 2016-06-03 2017-12-13 세메스 주식회사 Apparatus for binding dies
CN110970321A (en) * 2018-09-30 2020-04-07 上海微电子装备（集团）股份有限公司 Chip mounting equipment and chip mounting method
KR20210017048A (en) * 2019-08-06 2021-02-17 세메스 주식회사 Die bonding method and die bonding apparatus

Family Cites Families (4)

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Publication number Priority date Publication date Assignee Title
JP2001156083A (en) * 1999-11-24 2001-06-08 Hitachi Ltd Manufacturing method of semiconductor device and die bonding apparatus
KR200414775Y1 (en) * 2006-02-10 2006-04-24 한양정밀 (주) apparatus for transfering die
JP4333769B2 (en) * 2007-04-09 2009-09-16 パナソニック株式会社 Chip mounting apparatus and method for replacing peeling promoting head in chip mounting apparatus
JP5291687B2 (en) * 2010-10-05 2013-09-18 三星ダイヤモンド工業株式会社 Suction table

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150142717A (en) * 2014-06-11 2015-12-23 세메스 주식회사 Apparatus for exchanging a collet and a hood
KR20150142716A (en) * 2014-06-11 2015-12-23 세메스 주식회사 Apparatus for exchanging a collet and a hood
KR20160021520A (en) * 2014-08-18 2016-02-26 세메스 주식회사 Apparatus for exchanging a collet and a hood
KR20170137329A (en) * 2016-06-03 2017-12-13 세메스 주식회사 Apparatus for binding dies
CN110970321A (en) * 2018-09-30 2020-04-07 上海微电子装备（集团）股份有限公司 Chip mounting equipment and chip mounting method
KR20210017048A (en) * 2019-08-06 2021-02-17 세메스 주식회사 Die bonding method and die bonding apparatus

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