KR20130132828A - 중합체 에칭제 및 그의 사용 방법 - Google Patents

중합체 에칭제 및 그의 사용 방법 Download PDF

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Publication number
KR20130132828A
KR20130132828A KR20137013716A KR20137013716A KR20130132828A KR 20130132828 A KR20130132828 A KR 20130132828A KR 20137013716 A KR20137013716 A KR 20137013716A KR 20137013716 A KR20137013716 A KR 20137013716A KR 20130132828 A KR20130132828 A KR 20130132828A
Authority
KR
South Korea
Prior art keywords
weight
alkali metal
glycine
metal salt
aqueous solution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR20137013716A
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English (en)
Korean (ko)
Inventor
라비 팔라니스와미
Original Assignee
쓰리엠 이노베이티브 프로퍼티즈 컴파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 쓰리엠 이노베이티브 프로퍼티즈 컴파니 filed Critical 쓰리엠 이노베이티브 프로퍼티즈 컴파니
Publication of KR20130132828A publication Critical patent/KR20130132828A/ko
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/12—Chemical modification
    • C08J7/14—Chemical modification with acids, their salts or anhydrides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/002—Etching of the substrate by chemical or physical means by liquid chemical etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
    • H05K2203/0786—Using an aqueous solution, e.g. for cleaning or during drilling of holes
    • H05K2203/0793—Aqueous alkaline solution, e.g. for cleaning or etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
KR20137013716A 2010-11-03 2011-10-18 중합체 에칭제 및 그의 사용 방법 Ceased KR20130132828A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US40979110P 2010-11-03 2010-11-03
US61/409,791 2010-11-03
PCT/US2011/056743 WO2012061010A2 (en) 2010-11-03 2011-10-18 Polymer etchant and method of using same

Publications (1)

Publication Number Publication Date
KR20130132828A true KR20130132828A (ko) 2013-12-05

Family

ID=46024998

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20137013716A Ceased KR20130132828A (ko) 2010-11-03 2011-10-18 중합체 에칭제 및 그의 사용 방법

Country Status (6)

Country Link
US (1) US9909063B2 (enrdf_load_html_response)
JP (1) JP2014503607A (enrdf_load_html_response)
KR (1) KR20130132828A (enrdf_load_html_response)
CN (1) CN103189470B (enrdf_load_html_response)
TW (1) TW201224123A (enrdf_load_html_response)
WO (1) WO2012061010A2 (enrdf_load_html_response)

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US9674938B2 (en) 2010-11-03 2017-06-06 3M Innovative Properties Company Flexible LED device for thermal management
KR20130143061A (ko) 2010-11-03 2013-12-30 쓰리엠 이노베이티브 프로퍼티즈 컴파니 와이어 본드 프리 다이를 사용한 가요성 led 디바이스
US9151463B2 (en) 2010-12-29 2015-10-06 3M Innovative Properties Company LED color combiner
US8912562B2 (en) 2010-12-29 2014-12-16 3M Innovative Properties Company Remote phosphor LED constructions
WO2012112873A2 (en) 2011-02-18 2012-08-23 3M Innovative Properties Company Flexible light emitting semiconductor device
WO2013025402A2 (en) 2011-08-17 2013-02-21 3M Innovative Properties Company Two part flexible light emitting semiconductor device
CN104024723B (zh) 2011-11-23 2016-08-24 3M创新有限公司 具有三维结构的柔性发光半导体器件
US10077886B2 (en) 2012-06-01 2018-09-18 3M Innovative Properties Company Hybrid light bulbs using combinations of remote phosphor LEDS and direct emitting LEDS
EP2896078A4 (en) 2012-09-13 2016-05-25 3M Innovative Properties Co EFFICIENT LIGHTING SYSTEM WITH A LARGE COLOR RANGE
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US10207916B2 (en) 2014-05-28 2019-02-19 3M Innovative Properties Company MEMS devices on flexible substrate
CN208657154U (zh) 2015-03-20 2019-03-26 3M创新有限公司 用于附接发光半导体装置的柔性多层基板
KR101874194B1 (ko) * 2016-11-09 2018-07-03 경희대학교 산학협력단 고속 롤투롤 공정을 이용한 유연소자의 제조 방법
WO2018178817A2 (en) 2017-03-31 2018-10-04 3M Innovative Properties Company Optical system

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WO2013025402A2 (en) 2011-08-17 2013-02-21 3M Innovative Properties Company Two part flexible light emitting semiconductor device

Also Published As

Publication number Publication date
CN103189470B (zh) 2015-05-20
JP2014503607A (ja) 2014-02-13
US9909063B2 (en) 2018-03-06
CN103189470A (zh) 2013-07-03
WO2012061010A2 (en) 2012-05-10
WO2012061010A3 (en) 2012-07-19
US20130207031A1 (en) 2013-08-15
TW201224123A (en) 2012-06-16

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