KR20130120615A - 발광 소자 및 발광 소자 패키지 - Google Patents

발광 소자 및 발광 소자 패키지 Download PDF

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Publication number
KR20130120615A
KR20130120615A KR20120043643A KR20120043643A KR20130120615A KR 20130120615 A KR20130120615 A KR 20130120615A KR 20120043643 A KR20120043643 A KR 20120043643A KR 20120043643 A KR20120043643 A KR 20120043643A KR 20130120615 A KR20130120615 A KR 20130120615A
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KR
South Korea
Prior art keywords
layer
semiconductor layer
conductive semiconductor
light emitting
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR20120043643A
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English (en)
Korean (ko)
Inventor
문지형
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR20120043643A priority Critical patent/KR20130120615A/ko
Priority to US13/839,680 priority patent/US9099610B2/en
Priority to JP2013081970A priority patent/JP2013229598A/ja
Priority to CN201310145342.8A priority patent/CN103378240B/zh
Priority to EP20130165372 priority patent/EP2657992A3/en
Publication of KR20130120615A publication Critical patent/KR20130120615A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures

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  • Led Devices (AREA)
KR20120043643A 2012-04-26 2012-04-26 발광 소자 및 발광 소자 패키지 Ceased KR20130120615A (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR20120043643A KR20130120615A (ko) 2012-04-26 2012-04-26 발광 소자 및 발광 소자 패키지
US13/839,680 US9099610B2 (en) 2012-04-26 2013-03-15 Light emitting device and light emitting device package
JP2013081970A JP2013229598A (ja) 2012-04-26 2013-04-10 発光素子及び発光素子パッケージ
CN201310145342.8A CN103378240B (zh) 2012-04-26 2013-04-24 发光器件和发光器件封装件
EP20130165372 EP2657992A3 (en) 2012-04-26 2013-04-25 Light emitting device and light emitting device package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR20120043643A KR20130120615A (ko) 2012-04-26 2012-04-26 발광 소자 및 발광 소자 패키지

Publications (1)

Publication Number Publication Date
KR20130120615A true KR20130120615A (ko) 2013-11-05

Family

ID=48182824

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20120043643A Ceased KR20130120615A (ko) 2012-04-26 2012-04-26 발광 소자 및 발광 소자 패키지

Country Status (5)

Country Link
US (1) US9099610B2 (enExample)
EP (1) EP2657992A3 (enExample)
JP (1) JP2013229598A (enExample)
KR (1) KR20130120615A (enExample)
CN (1) CN103378240B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016209015A1 (ko) * 2015-06-25 2016-12-29 엘지이노텍 주식회사 자외선 발광소자, 발광소자 패키지 및 조명장치
KR20170001138A (ko) * 2015-06-25 2017-01-04 엘지이노텍 주식회사 자외선 발광소자, 발광소자 패키지 및 조명장치
KR20170053998A (ko) * 2015-11-09 2017-05-17 엘지이노텍 주식회사 자외선 발광소자 및 발광소자 패키지

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US8994058B2 (en) * 2013-01-30 2015-03-31 Lg Innotek Co., Ltd. Light emitting device having an ohmic layer with a plurality of protruding contact portions
US9112114B2 (en) * 2013-01-30 2015-08-18 Lg Innotek Co., Ltd. Light emitting device with metal electrode layer having protrusion portions
DE102013103079A1 (de) * 2013-03-26 2014-10-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102013107531A1 (de) * 2013-07-16 2015-01-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
TWI540753B (zh) * 2013-07-30 2016-07-01 隆達電子股份有限公司 發光二極體結構
US10797188B2 (en) * 2014-05-24 2020-10-06 Hiphoton Co., Ltd Optical semiconductor structure for emitting light through aperture
TWI758603B (zh) * 2014-07-03 2022-03-21 晶元光電股份有限公司 光電元件及其製造方法
US20160064603A1 (en) * 2014-08-26 2016-03-03 Toshiba Corporation Light Emitting Diodes With Current Confinement
DE102014113380B4 (de) * 2014-09-17 2017-05-04 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Halbleiterchips
KR102249637B1 (ko) * 2014-10-28 2021-05-10 엘지이노텍 주식회사 발광소자 및 이를 구비한 발광소자 패키지
CN104576862B (zh) * 2014-12-24 2017-08-25 江苏巨晶新材料科技有限公司 一种基于铜衬底的氮化物led垂直芯片及其制备方法
US9793436B2 (en) 2015-01-16 2017-10-17 Epistar Corporation Semiconductor light-emitting device
JP2016174018A (ja) * 2015-03-16 2016-09-29 株式会社東芝 半導体発光素子
JP2016174015A (ja) * 2015-03-16 2016-09-29 株式会社東芝 半導体発光素子
JP6468459B2 (ja) * 2015-03-31 2019-02-13 ウシオ電機株式会社 半導体発光素子
JP6668863B2 (ja) * 2016-03-22 2020-03-18 日亜化学工業株式会社 発光素子
CN120091672A (zh) * 2016-06-24 2025-06-03 苏州立琻半导体有限公司 半导体器件和包括半导体器件的半导体器件封装
JP7324395B2 (ja) * 2018-09-27 2023-08-10 日亜化学工業株式会社 発光素子及びその製造方法
CN114730739B (zh) * 2019-12-05 2023-06-06 苏州晶湛半导体有限公司 半导体结构及其制作方法
CN111370591A (zh) * 2020-03-12 2020-07-03 浙江大学 一种顶发射硅基钙钛矿发光二极管及其制备方法

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JP5162809B2 (ja) * 2004-02-09 2013-03-13 日亜化学工業株式会社 窒化物半導体素子
JPWO2006013698A1 (ja) * 2004-08-02 2008-05-01 日本電気株式会社 窒化物半導体素子、及びその製造方法
JP2007329382A (ja) * 2006-06-09 2007-12-20 Mitsubishi Cable Ind Ltd ＧａＮ系発光ダイオード素子
US7674639B2 (en) * 2006-08-14 2010-03-09 Bridgelux, Inc GaN based LED with etched exposed surface for improved light extraction efficiency and method for making the same
KR101282775B1 (ko) 2006-11-03 2013-07-05 엘지이노텍 주식회사 수직형 발광 소자 및 그 제조방법
JP2009049395A (ja) * 2007-07-24 2009-03-05 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
KR20090018451A (ko) 2007-08-17 2009-02-20 삼성전기주식회사 수직구조 갈륨계 ｌｅｄ 소자의 제조방법
JP4167717B1 (ja) * 2007-11-21 2008-10-22 Ｅ＆Ｅ Ｊａｐａｎ株式会社 発光装置及びその製造方法
JP2010062493A (ja) 2008-09-08 2010-03-18 Stanley Electric Co Ltd 半導体発光素子および半導体発光素子の製造方法
KR101072034B1 (ko) * 2009-10-15 2011-10-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR100974787B1 (ko) * 2010-02-04 2010-08-06 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101047721B1 (ko) * 2010-03-09 2011-07-08 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
KR101114191B1 (ko) 2010-09-17 2012-03-13 엘지이노텍 주식회사 발광소자
DE102010048617A1 (de) * 2010-10-15 2012-04-19 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Halbleiterschichtenfolge, strahlungsemittierender Halbleiterchip und optoelektronisches Bauteil
KR101752663B1 (ko) * 2010-12-22 2017-06-30 엘지이노텍 주식회사 발광소자 및 발광소자 제조방법

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016209015A1 (ko) * 2015-06-25 2016-12-29 엘지이노텍 주식회사 자외선 발광소자, 발광소자 패키지 및 조명장치
KR20170001138A (ko) * 2015-06-25 2017-01-04 엘지이노텍 주식회사 자외선 발광소자, 발광소자 패키지 및 조명장치
US10243103B2 (en) 2015-06-25 2019-03-26 Lg Innotek Co., Ltd. Ultraviolet light emitting diode, light emitting diode package, and lighting device
KR20220011771A (ko) * 2015-06-25 2022-01-28 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 자외선 발광소자, 발광소자 패키지 및 조명장치
KR20170053998A (ko) * 2015-11-09 2017-05-17 엘지이노텍 주식회사 자외선 발광소자 및 발광소자 패키지
WO2017082622A1 (ko) * 2015-11-09 2017-05-18 엘지이노텍 주식회사 자외선 발광소자 및 발광소자 패키지
US10971648B2 (en) 2015-11-09 2021-04-06 Lg Innotek Co., Ltd. Ultraviolet light-emitting element and light-emitting element package

Also Published As

Publication number Publication date
CN103378240B (zh) 2017-09-22
CN103378240A (zh) 2013-10-30
JP2013229598A (ja) 2013-11-07
US20130285095A1 (en) 2013-10-31
EP2657992A3 (en) 2015-01-14
US9099610B2 (en) 2015-08-04
EP2657992A2 (en) 2013-10-30

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