KR20130100191A - 홀 검사 장치 및 상기 장치를 이용한 홀 검사 방법 - Google Patents
홀 검사 장치 및 상기 장치를 이용한 홀 검사 방법 Download PDFInfo
- Publication number
- KR20130100191A KR20130100191A KR1020137017197A KR20137017197A KR20130100191A KR 20130100191 A KR20130100191 A KR 20130100191A KR 1020137017197 A KR1020137017197 A KR 1020137017197A KR 20137017197 A KR20137017197 A KR 20137017197A KR 20130100191 A KR20130100191 A KR 20130100191A
- Authority
- KR
- South Korea
- Prior art keywords
- hole
- electron beam
- electron
- zone
- conductive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000000034 method Methods 0.000 title claims description 54
- 238000007689 inspection Methods 0.000 title claims description 44
- 238000010894 electron beam technology Methods 0.000 claims abstract description 136
- 230000005856 abnormality Effects 0.000 claims description 14
- 230000001678 irradiating effect Effects 0.000 claims description 11
- 230000035515 penetration Effects 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 238000003384 imaging method Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 15
- 239000010410 layer Substances 0.000 description 78
- 230000002159 abnormal effect Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000009125 cardiac resynchronization therapy Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/305—Contactless testing using electron beams
- G01R31/307—Contactless testing using electron beams of integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/063—Electron sources
- H01J2237/06325—Cold-cathode sources
- H01J2237/06341—Field emission
- H01J2237/0635—Multiple source, e.g. comb or array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/22—Treatment of data
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24592—Inspection and quality control of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2809—Scanning microscopes characterised by the imaging problems involved
- H01J2237/281—Bottom of trenches or holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2817—Pattern inspection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060030129 | 2006-04-03 | ||
| KR20060030129 | 2006-04-03 | ||
| PCT/KR2007/001634 WO2007114642A1 (en) | 2006-04-03 | 2007-04-03 | Hole inspection apparatus and hole inspection method using the same |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020117024842A Division KR20110131301A (ko) | 2006-04-03 | 2007-04-03 | 홀 검사 장치 및 상기 장치를 이용한 홀 검사 방법 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020147013967A Division KR101484454B1 (ko) | 2006-04-03 | 2007-04-03 | 홀 검사 장치 및 상기 장치를 이용한 홀 검사 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20130100191A true KR20130100191A (ko) | 2013-09-09 |
Family
ID=38563867
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020137017197A Ceased KR20130100191A (ko) | 2006-04-03 | 2007-04-03 | 홀 검사 장치 및 상기 장치를 이용한 홀 검사 방법 |
| KR1020117024842A Ceased KR20110131301A (ko) | 2006-04-03 | 2007-04-03 | 홀 검사 장치 및 상기 장치를 이용한 홀 검사 방법 |
| KR1020147013967A Expired - Fee Related KR101484454B1 (ko) | 2006-04-03 | 2007-04-03 | 홀 검사 장치 및 상기 장치를 이용한 홀 검사 방법 |
| KR1020087023284A Ceased KR20080102232A (ko) | 2006-04-03 | 2007-04-03 | 홀 검사 장치 및 상기 장치를 이용한 홀 검사 방법 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020117024842A Ceased KR20110131301A (ko) | 2006-04-03 | 2007-04-03 | 홀 검사 장치 및 상기 장치를 이용한 홀 검사 방법 |
| KR1020147013967A Expired - Fee Related KR101484454B1 (ko) | 2006-04-03 | 2007-04-03 | 홀 검사 장치 및 상기 장치를 이용한 홀 검사 방법 |
| KR1020087023284A Ceased KR20080102232A (ko) | 2006-04-03 | 2007-04-03 | 홀 검사 장치 및 상기 장치를 이용한 홀 검사 방법 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7968844B2 (enExample) |
| EP (1) | EP2002473A4 (enExample) |
| JP (1) | JP2009532894A (enExample) |
| KR (4) | KR20130100191A (enExample) |
| CN (1) | CN101416295A (enExample) |
| TW (1) | TWI334933B (enExample) |
| WO (1) | WO2007114642A1 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102053106B (zh) * | 2009-11-09 | 2013-03-27 | 中芯国际集成电路制造(上海)有限公司 | 一种缺陷检测方法 |
| US20110294071A1 (en) * | 2010-05-28 | 2011-12-01 | Canon Kabushiki Kaisha | Electron gun, lithography apparatus, method of manufacturing article, and electron beam apparatus |
| WO2011151116A1 (en) * | 2010-06-03 | 2011-12-08 | Carl Zeiss Sms Gmbh | A method for determining the performance of a photolithographic mask |
| US8399264B2 (en) * | 2010-11-30 | 2013-03-19 | Intel Corporation | Alignment inspection |
| KR101339227B1 (ko) | 2011-12-08 | 2013-12-11 | 기아자동차주식회사 | 자동변속기의 댐퍼 클러치 제어방법 |
| US9304160B1 (en) | 2012-05-08 | 2016-04-05 | Kla-Tencor Corporation | Defect inspection apparatus, system, and method |
| JP6069723B2 (ja) * | 2012-06-06 | 2017-02-01 | 澁谷工業株式会社 | 微小ボール搭載ワークのリペア装置 |
| US9932664B2 (en) * | 2012-11-06 | 2018-04-03 | Purdue Research Foundation | Methods for directed irradiation synthesis with ion and thermal beams |
| JP5965851B2 (ja) * | 2013-02-15 | 2016-08-10 | 株式会社日立ハイテクノロジーズ | 試料観察装置 |
| KR102086362B1 (ko) | 2013-03-08 | 2020-03-09 | 삼성전자주식회사 | 편광화된 빛을 이용하여 공정을 모니터링하는 반도체 제조 설비 및 모니터링 방법 |
| WO2014189465A1 (en) * | 2013-05-23 | 2014-11-27 | Tao Luo | Multi-column electron beam inspection that uses custom printing methods |
| JP2015141985A (ja) * | 2014-01-28 | 2015-08-03 | 株式会社東芝 | 検査装置、及び検査方法 |
| KR20170031806A (ko) * | 2015-08-13 | 2017-03-22 | 한국기계연구원 | 전자빔을 이용한 인쇄회로기판의 검사장치 및 방법 |
| KR101720697B1 (ko) * | 2016-07-06 | 2017-04-03 | 씨이비티 주식회사 | 대면적 전계방출원 장치에의 전자 방출원의 균일 방출 검사 방법 |
| CN108615666B (zh) * | 2016-12-09 | 2024-04-19 | 上海凯世通半导体股份有限公司 | 束流检测装置 |
| US10649026B2 (en) * | 2017-03-30 | 2020-05-12 | Globalfoundries Inc. | Apparatus for and method of net trace prior level subtraction |
| WO2020084729A1 (ja) * | 2018-10-25 | 2020-04-30 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置、荷電粒子線装置のオートフォーカス処理方法、及び検出器 |
| JP7507763B2 (ja) * | 2018-12-31 | 2024-06-28 | エーエスエムエル ネザーランズ ビー.ブイ. | サンプルをスキャンするための荷電粒子ビームシステム |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2970113B2 (ja) | 1991-09-20 | 1999-11-02 | 富士通株式会社 | パターン検査装置 |
| US5384463A (en) * | 1991-06-10 | 1995-01-24 | Fujisu Limited | Pattern inspection apparatus and electron beam apparatus |
| JP2000100369A (ja) * | 1998-09-28 | 2000-04-07 | Jeol Ltd | 荷電粒子ビーム装置 |
| JP3175765B2 (ja) * | 1998-12-08 | 2001-06-11 | 日本電気株式会社 | 半導体ウエハーの検査方法 |
| JP3749107B2 (ja) * | 1999-11-05 | 2006-02-22 | ファブソリューション株式会社 | 半導体デバイス検査装置 |
| JP3732738B2 (ja) * | 2000-12-08 | 2006-01-11 | ファブソリューション株式会社 | 半導体デバイス検査装置 |
| JP2002231780A (ja) * | 2001-01-30 | 2002-08-16 | Jeol Ltd | 荷電粒子ビームを用いたホールの検査方法 |
| US7078690B2 (en) | 2002-02-04 | 2006-07-18 | Applied Materials, Israel, Ltd. | Monitoring of contact hole production |
| US7038224B2 (en) * | 2002-07-30 | 2006-05-02 | Applied Materials, Israel, Ltd. | Contact opening metrology |
| JP2004071954A (ja) * | 2002-08-08 | 2004-03-04 | Jeol Ltd | ホールの検査方法 |
| US7592586B2 (en) * | 2003-01-27 | 2009-09-22 | Ebara Corporation | Mapping-projection-type electron beam apparatus for inspecting sample by using electrons reflected from the sample |
| JP4080902B2 (ja) | 2003-01-30 | 2008-04-23 | 株式会社トプコン | 半導体デバイス解析装置および解析方法 |
| KR100562701B1 (ko) * | 2004-01-07 | 2006-03-23 | 삼성전자주식회사 | 전자 소스 및 이를 이용한 구멍의 오픈 불량 검사 장치와방법 |
| JP2005233757A (ja) * | 2004-02-19 | 2005-09-02 | Oki Electric Ind Co Ltd | ホールパターン検査方法及びホールパターン検査装置 |
-
2007
- 2007-04-02 TW TW096111560A patent/TWI334933B/zh not_active IP Right Cessation
- 2007-04-03 US US12/295,770 patent/US7968844B2/en not_active Expired - Fee Related
- 2007-04-03 KR KR1020137017197A patent/KR20130100191A/ko not_active Ceased
- 2007-04-03 WO PCT/KR2007/001634 patent/WO2007114642A1/en not_active Ceased
- 2007-04-03 EP EP07745797A patent/EP2002473A4/en not_active Withdrawn
- 2007-04-03 KR KR1020117024842A patent/KR20110131301A/ko not_active Ceased
- 2007-04-03 CN CNA200780011762XA patent/CN101416295A/zh active Pending
- 2007-04-03 KR KR1020147013967A patent/KR101484454B1/ko not_active Expired - Fee Related
- 2007-04-03 KR KR1020087023284A patent/KR20080102232A/ko not_active Ceased
- 2007-04-03 JP JP2009504120A patent/JP2009532894A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR20080102232A (ko) | 2008-11-24 |
| WO2007114642A1 (en) | 2007-10-11 |
| KR101484454B1 (ko) | 2015-01-22 |
| EP2002473A1 (en) | 2008-12-17 |
| TWI334933B (en) | 2010-12-21 |
| CN101416295A (zh) | 2009-04-22 |
| JP2009532894A (ja) | 2009-09-10 |
| EP2002473A4 (en) | 2011-08-03 |
| KR20110131301A (ko) | 2011-12-06 |
| KR20140100477A (ko) | 2014-08-14 |
| US7968844B2 (en) | 2011-06-28 |
| US20090152461A1 (en) | 2009-06-18 |
| TW200739110A (en) | 2007-10-16 |
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Comment text: Divisional Application for International Patent Patent event code: PA01041R01D Patent event date: 20130701 Application number text: 1020117024842 Filing date: 20111020 |
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Comment text: Notification of reason for refusal Patent event date: 20130917 Patent event code: PE09021S01D |
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Patent event date: 20140328 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20130917 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |
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Patent event date: 20140428 Comment text: Request for Trial against Decision on Refusal Patent event code: PJ02012R01D Patent event date: 20140328 Comment text: Decision to Refuse Application Patent event code: PJ02011S01I Appeal kind category: Appeal against decision to decline refusal Decision date: 20140815 Appeal identifier: 2014101002561 Request date: 20140428 |
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| PB0901 | Examination by re-examination before a trial |
Comment text: Amendment to Specification, etc. Patent event date: 20140523 Patent event code: PB09011R02I Comment text: Request for Trial against Decision on Refusal Patent event date: 20140428 Patent event code: PB09011R01I Comment text: Amendment to Specification, etc. Patent event date: 20131118 Patent event code: PB09011R02I |
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| PC1202 | Submission of document of withdrawal before decision of registration |
Comment text: [Withdrawal of Procedure relating to Patent, etc.] Withdrawal (Abandonment) Patent event code: PC12021R01D Patent event date: 20140815 |
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| PJ1201 | Withdrawal of trial |
Patent event code: PJ12011R01D Patent event date: 20140815 Comment text: Written Withdrawal of Request for Trial Appeal identifier: 2014101002561 Request date: 20140428 Appeal kind category: Appeal against decision to decline refusal Decision date: 20140815 |
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| WITB | Written withdrawal of application |