KR20130095213A - Proximity exposure apparatus, method of forming exposure light in the proximity exposure apparatus and method of manufacturing a display panel substrate - Google Patents

Abstract

PURPOSE: A proximity exposure apparatus, a method for forming the exposure light of the proximity exposure apparatus, and a method for manufacturing a display panel board are provided to reduce the size of an optical source by regularly arranging a plurality of semiconductor light emitting devices and a plurality of magnifying lenses. CONSTITUTION: A plurality of semiconductor light emitting devices (42) generate light to form exposure light. A base substrate (41) mounts the semiconductor light emitting devices and is flat. A plurality of magnifying lenses (43) correspond to each semiconductor light emitting device. The magnifying lenses magnify the light from each semiconductor light emitting device. [Reference numerals] (35) Illumination sensor; (46) Control circuit; (48) Cooling device

Description

PROCIMITY EXPOSURE APPARATUS, METHOD OF FORMING EXPOSURE LIGHT IN THE PROXIMITY EXPOSURE APPARATUS AND METHOD OF MANUFACTURING A DISPLAY PANEL SUBSTRATE}

In the manufacture of display panel substrates such as liquid crystal display devices, the present invention uses a plurality of semiconductor light emitting elements as a light source for generating exposure light and uses a fly eye lens as an optical integrator. An exposure light forming method of an exposure apparatus and a manufacturing method of a display panel substrate using them.

Photolithography is used to manufacture thin film transistor (TFT) substrates, color filter substrates, substrates for plasma display panels, substrates for organic electroluminescence (EL) displays, and the like for liquid crystal display devices used as display panels. It is performed by forming a pattern on a board | substrate by a technique. As an exposure apparatus, a projection method for projecting a pattern of a mask onto a substrate using a lens or a mirror, and a proxy for transferring a pattern of the mask to the substrate by providing a small gap (proxy gap) between the mask and the substrate There is a Miti way. Although the proximity resolution is inferior in pattern resolution performance to the projection method, the proximity optical system has a simple structure and a high processing capacity and is suitable for mass production.

Conventionally, a lamp in which a high pressure gas is enclosed in a valve, such as a mercury lamp, a halogen lamp, a xenon lamp, etc. has been used for the light source which produces the exposure light of a proximity exposure apparatus. These lamps have a short lifespan and must be replaced after a predetermined time of use. For example, in the case where the lamp has a life of 750 hours, when the lamp is continuously lit, it needs to be replaced once per month. When the lamp is replaced, the exposure process is interrupted and the productivity is lowered.

On the other hand, Patent Document 1 discloses a technique using a semiconductor light emitting element such as a light emitting diode or a laser diode as a light source of exposure light in a proximity exposure apparatus. Since semiconductor light emitting devices such as light emitting diodes and laser diodes have a lifespan of thousands of hours, they are longer than lamps, and the exposure process is rarely interrupted.

When using a some semiconductor light emitting element for the light source which produces exposure light, as described in patent document 1, a fly's eye lens is used as an optical integrator. A fly's eye lens is a lens array in which a plurality of single lenses are arranged vertically and horizontally. 12 is a diagram illustrating the operation of the fly's eye lens. The light generated from the plurality of semiconductor light emitting elements 42 is magnified by the magnifying lens 43 and irradiated to the fly's eye lens 45. The fly's eye lens 45 projects the light magnified by the plurality of magnification lenses 43 onto the same irradiation surface and superimposes them to uniform the illuminance distribution. At this time, the light incident on the fly's eye lens 45 deviates from the irradiation surface of the fly's eye lens 45 when the incident angle β is larger than the predetermined angle.

In recent years, as the size of the display panel increases in size, the illuminant has been required to have a higher illuminance. In a proximity exposure apparatus mainly used for exposing large-sized substrates, when a plurality of semiconductor light emitting elements are used as a light source for generating exposure light, the output of the semiconductor light emitting elements is much smaller than that of conventional lamps. As many as semiconductor light emitting devices should be used. In this case, a part of the light generated from the outside semiconductor light emitting element and enlarged by the magnifying lens has a problem that the angle of incidence into the fly's eye lens becomes large and cannot be used to form the exposure light beyond the irradiation surface of the fly's eye lens. there was.

In the technique described in Patent Literature 1, a reflection member is provided surrounding a light path from a plurality of magnifying lenses to a fly eye lens, and light that is not directly irradiated with the fly eye lens among the light emitted from the semiconductor light emitting element is used as a reflection member. By reflecting and entering the fly's eye lens within a predetermined angle not deviating from the irradiation surface of the fly's eye lens, exposure light with high illuminance is formed using the light of each semiconductor light emitting element efficiently.

Japanese Patent Application Laid-Open No. 2011-17770

When using a plurality of semiconductor light emitting elements as a light source for generating exposure light and using a fly eye lens as an optical integrator, a predetermined angle does not deviate most of the light generated from each semiconductor light emitting element from the irradiation surface of the fly eye lens. In order to be incident to the fly's eye lens within a short time and to efficiently use the light generated by each semiconductor light emitting element, the optical axis of the light generated from each of the semiconductor light emitting elements needs to be directed to the center of the incident surface of the fly's eye lens. Therefore, conventionally, the surface of the base substrate on which each semiconductor light emitting element is mounted is formed on a spherical surface, and each semiconductor light emitting element is disposed on a spherical surface. However, adjusting the attachment angle of each semiconductor light emitting element disposed on the spherical surface and accurately adjusting the optical axis of the light generated from each semiconductor light emitting element to the center of the incident surface of the fly's eye lens takes a lot of time, and it can be carried out hundreds to thousands of times. It took a lot of effort and time to adjust the attachment angle of the semiconductor light emitting element.

On the other hand, as described in Patent Literature 1, when a base substrate is formed by combining a plurality of flat substrates having different attachment angles, mounting of each semiconductor light emitting element to the base substrate is facilitated, but each semiconductor mounted on each substrate It is necessary to adjust the attachment angle of each board | substrate so that the optical axis of the light emitted from the light emitting element may be correctly directed to the center of the incident surface of the fly's eye lens. In addition, when using the reflective member like patent document 1, the length of the reflective member reached several meters, and it was difficult to install such a large reflective member without distortion, and to adjust the attachment angle.

An object of the present invention is to facilitate the installation of each semiconductor light emitting element when superimposing light generated from a plurality of semiconductor light emitting elements with a fly-eye lens to form exposure light, and to efficiently use the light of each semiconductor light emitting element. Thus, exposure light with high illuminance is formed. Moreover, the subject of this invention is improving the productivity of a display panel board | substrate.

The proximity exposure apparatus of the present invention comprises a plurality of semiconductor light emitting elements for generating light for forming exposure light, a base substrate on which the plurality of semiconductor light emitting elements are mounted, and corresponding semiconductor light emitting elements, A proximity exposure apparatus comprising a plurality of magnification lenses for enlarging light generated from an element and a fly eye lens, and overlapping the light magnified by the plurality of magnification lenses with a fly eye lens to form exposure light. It has a parabolic mirror surface provided in the optical path from the lens to the fly's eye lens, and has a concave mirror reflecting the light magnified by the plurality of magnifying lenses to irradiate the fly's eye lens, and the base substrate has a flat structure, The semiconductor light emitting element is mounted on the same plane, and the base substrate and the fly's eye lens are mounted on the base substrate. The distance from the center of the optical element group to the center of the concave mirror and the distance from the center of the concave mirror to the center of the incident surface of the fly's eye lens are the same as the focal length of the concave mirror and the center position of the semiconductor light emitting element group mounted on the base substrate. And the center position of the incident surface of the fly's eye lens are symmetrical with a normal passing through the focal plane's focal point interposed therebetween, and the plurality of semiconductor light emitting elements and the plurality of magnifying lenses are generated from each semiconductor light emitting element and correspond to each other. The optical axis of light, which is enlarged by the magnifying lens and reflected by the concave mirror, is disposed so as to be incident on the fly's eye lens within a predetermined angle without departing from the irradiation surface of the fly's eye lens.

In addition, the exposure light forming method of the proximity exposure apparatus of the present invention includes mounting a plurality of semiconductor light emitting elements on a base substrate to generate light for forming exposure light from each semiconductor light emitting element, and correspondingly to each semiconductor light emitting element. A proximity exposure apparatus is provided that provides a plurality of magnification lenses, magnifies the light generated from each semiconductor light emitting element from a corresponding magnification lens, and overlaps the light magnified by the plurality of magnification lenses with a fly-eye lens to form exposure light. An exposure light forming method comprising: a base substrate having a parabolic mirror surface in a light path from a plurality of magnifying lenses to a fly's eye lens, reflecting light enlarged by the plurality of magnifying lenses, and irradiating the fly's eye lens to a base substrate; To form a plurality of semiconductor light emitting elements on the same plane, the base substrate and the fly's eye lens The distance from the center of the semiconductor light emitting element group mounted on the base substrate to the center of the concave mirror and the distance from the center of the concave mirror to the center of the incident surface of the fly's eye lens is the same as the focal length of the concave mirror, and the semiconductor mounted on the base substrate The center position of the light emitting element group and the center position of the incident surface of the fly's eye lens are arranged to be symmetrical with a normal line passing through the focal point of the concave mirror, and a plurality of semiconductor light emitting elements and a plurality of magnification lenses are disposed. A plurality of semiconductor light emitting devices are disposed so that the optical axis of the light generated by the element and enlarged by the corresponding magnifying lens and reflected by the concave mirror enters the fly's eye lens within a predetermined angle without departing from the irradiation surface of the fly's eye lens. Reflects light from the concave mirror, To investigate into the eye lens.

In the optical path from the plurality of magnification lenses to the fly's eye lens, a concave mirror having a parabolic surface and reflecting light magnified by the plurality of magnification lenses and irradiating the fly's eye lens is provided. When the mirror surface of the concave mirror is a parabolic surface, all of the light generated at the focal point of the concave mirror becomes parallel when reflected from the mirror surface of the concave mirror. In addition, all the light incident in parallel with the normal passing through the focal plane of the concave mirror is focused on the reflection when reflected from the mirror surface of the concave mirror. Light incident obliquely at the same angle with respect to the normal line passing through the concave mirror, when reflected from the mirror surface of the concave mirror, the light is collected at a different point depending on the incident angle, and the distance from the center of the concave mirror at each point is equal to the focal length. .

Since the base substrate is flat and the plurality of semiconductor light emitting devices are mounted on the same plane, the plurality of semiconductor light emitting devices can be easily installed at the same attachment angle on the same plane. The distance from the center of the semiconductor light emitting element group in which the base substrate and the fly eye lens are mounted on the base substrate to the center of the concave mirror and the distance from the center of the concave mirror to the center of the incident surface of the fly eye lens are the same as the focal length of the concave mirror. In addition, since the center position of the group of semiconductor light emitting devices mounted on the base substrate and the center position of the incident surface of the fly's eye lens are arranged to be symmetrical with a normal line passing through the focal point of the concave mirror, each semiconductor light emitting device is used as a concave mirror. The point where the optical axis of the incident light converges is located at the center of the incident surface of the fly's eye lens. Therefore, the optical axis of light generated from each semiconductor light emitting element provided on the same plane of the base substrate at the same attachment angle and obliquely obliquely mirrored at the same angle with respect to the normal passing through the focal plane of the concave mirror, By reflection, it is directed to the center of the incident surface of all the fly's eye lenses. The incidence angle of each optical axis is within a predetermined angle which does not deviate from the irradiation surface of the fly's eye lens by the arrangement of the plurality of semiconductor light emitting elements and the plurality of magnification lenses, and thus the magnification lens generated from each semiconductor light emitting element and corresponding to each other. The majority of the light reflected by the concave mirror is incident on the fly's eye lens within a predetermined angle that does not deviate from the irradiation surface of the fly's eye lens, and is used for forming the exposure light. Therefore, when the exposure light is formed by superimposing the light generated from the plurality of semiconductor light emitting devices with a fly's eye lens, the installation of each semiconductor light emitting device is facilitated, and the light of each semiconductor light emitting device is efficiently used so that the illuminance High exposure light is formed.

In addition, in the proximity exposure apparatus of the present invention, each magnification lens magnifies and emits light generated from each semiconductor light emitting element so that the light reflected from the concave mirror becomes a substantially parallel beam beam. Further, in the exposure light forming method of the proximity exposure apparatus of the present invention, the light emitted from each semiconductor light emitting element is magnified and irradiated with the concave mirror so that the light reflected by the concave mirror becomes a substantially parallel light beam by each magnification lens. will be. By properly setting the magnification of the magnifying lens, since the light reflected by the concave mirror becomes a substantially parallel beam flux, almost all of the light reflected by the concave mirror is moved to the fly's eye lens within a predetermined angle that does not deviate from the irradiation surface of the fly's eye lens. It enters and is used for formation of exposure light. Therefore, the light of each semiconductor light emitting element is used more efficiently to form exposure light with higher illumination.

In addition, in the proximity exposure apparatus of the present invention, the base substrate is configured by combining a plurality of flat substrates, and the plurality of magnifying lenses are configured for each of the substrates. In the exposure light forming method of the proximity exposure apparatus of the present invention, a plurality of flat substrates are combined to form a base substrate, and a plurality of magnifying lenses are configured for each of the substrates. According to the optical characteristics of the fly's eye lens and the concave mirror, the base substrate can be appropriately sized, the required group of semiconductor light emitting elements can be arranged, and the optical axis of each magnifying lens can be easily adjusted for each substrate.

Furthermore, in the proximity exposure apparatus of the present invention, each semiconductor light emitting element is disposed at a position of each vertex of a plurality of equilateral triangles adjacent to each other without a gap, and each magnification lens is adjacent to each other in a regular hexagon with a cross section perpendicular to the optical axis. It is placed without gaps. Further, the exposure light forming method of the proximity exposure apparatus of the present invention arranges each semiconductor light emitting element at a position of each vertex of a plurality of equilateral triangles adjacent to each other without a gap, and has a regular hexagon having a cross section perpendicular to the optical axis of each magnifying lens. Each magnification lens is arranged adjacent to each other without a gap. A plurality of semiconductor light emitting elements and a plurality of magnifying lenses are disposed evenly and at high density, and the entire light source becomes small.

In the method for manufacturing a display panel substrate of the present invention, the substrate is exposed using any one of the above exposure apparatuses or is formed using the exposure light forming method of any one of the above exposure apparatuses. Exposure light is irradiated to a board | substrate through a mask, and a board | substrate is exposed. By using the exposure light forming method of the above-described proximity exposure device or proximity exposure device, the illumination intensity of the exposure light is increased, the exposure time is shortened, and the lifespan of the light source of the exposure light is long, so that the productivity of the display panel substrate is improved. do.

According to the exposure light forming method of the proximity exposure apparatus and the proximity exposure apparatus of the present invention, when the exposure light is formed by superimposing light generated from a plurality of semiconductor light emitting elements with a fly-eye lens, the installation of each semiconductor light emitting element is easy. In addition, by utilizing the light of each semiconductor light emitting element efficiently, it is possible to form exposure light with high illuminance.

In addition, according to the exposure light forming method of the proximity exposure apparatus and the proximity exposure apparatus of the present invention, the light generated from each semiconductor light emitting element is reflected by each magnification lens such that the light reflected from the concave mirror becomes a substantially parallel beam flux. By expanding and irradiating with a concave mirror, it is possible to more efficiently use the light of each semiconductor light emitting element to form exposure light with a higher illuminance.

Furthermore, according to the exposure light forming method of the proximity exposure apparatus and the proximity exposure apparatus of the present invention, a base substrate is formed by combining a plurality of flat substrates, and a plurality of magnification lenses are configured for each of the substrates, whereby a fly-eye lens and According to the optical characteristics of the concave mirror, it is possible to realize the arrangement of the group of semiconductor light emitting elements with the appropriate size of the base substrate, and the optical axis of each magnifying lens can be easily adjusted for each substrate.

In addition, according to the exposure light forming method of the proximity exposure apparatus and the proximity exposure apparatus of the present invention, each semiconductor light emitting element is disposed at a position of each vertex of a plurality of equilateral triangles adjacent to each other without gaps, and the optical axis of each magnification lens. By arranging each magnification lens adjacent to each other without a gap, the plurality of semiconductor light emitting elements and the plurality of magnification lenses can be equally and densely arranged at high density, and the entire light source can be miniaturized.

According to the manufacturing method of the display panel substrate of the present invention, since the illuminance of the exposure light is increased, the exposure time is shortened, and the lifetime of the light source of the exposure light is long, so that the productivity of the display panel substrate can be improved.

BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows schematic structure of the proximity exposure apparatus by one Embodiment of this invention.
2 is a view showing a light source unit of the proximity exposure apparatus according to the embodiment of the present invention.
3 is a view for explaining the arrangement of the concave mirror, the semiconductor light emitting element and the fly's eye lens.
4 is a view for explaining the operation of the light source unit.
5 is a diagram illustrating a relationship between the distance between semiconductor light emitting elements and the distance from the center of the concave mirror to the center of the incident surface of the fly's eye lens.
6 is a diagram illustrating an example of a base substrate.
7 is a diagram illustrating an example of a substrate.
8A of FIG. 8 is a front view of an example of an enlarged lens, and FIG. 8B is a side view of the same.
9 is a front view of the base substrate and the magnifying lens.
Fig. 10 is a flowchart showing an example of the manufacturing process of the TFT substrate of the liquid crystal display device.
Fig. 11 is a flowchart showing an example of the manufacturing process of the color filter substrate of the liquid crystal display device.
12 is a view for explaining the operation of the fly's eye lens.

1 is a diagram showing a schematic configuration of a proximity exposure apparatus according to one embodiment of the present invention. The proximity exposure apparatus includes a base 3, an X guide 4, an X stage 5, a Y guide 6, a Y stage 7, a θ stage 8, a chuck support 9, and a chuck 10. ), A mask holder 20, and an exposure light irradiation device 30. In addition to these, the proximity exposure apparatus includes a substrate transport robot for carrying the substrate 1 into the chuck 10 and carrying the substrate 1 out of the chuck 10, a temperature control unit for temperature management in the apparatus, and the like. Doing.

And the XY direction in embodiment described below may change X direction and Y direction as an example.

In FIG. 1, the chuck 10 is at an exposure position at which the substrate 1 is exposed. The mask holder 20 holding the mask 2 is provided above the exposure position. The mask holder 20 vacuum-holds the peripheral portion of the mask 2. An exposure light irradiation device 30 is disposed above the mask 2 held by the mask holder 20. At the time of exposure, the exposure light from the exposure light irradiation apparatus 30 passes through the mask 2 and is irradiated onto the substrate 1 so that the pattern of the mask 2 is transferred to the surface of the substrate 1, and the substrate 1 A pattern is formed on ().

The chuck 10 is moved to the rod / unload position away from the exposure position by the X stage 5. At the load / unload position, the substrate 1 is loaded into the chuck 10 by the substrate transport robot (not shown), and the substrate 1 is also carried out from the chuck 10. The load of the board | substrate 1 to the chuck 10 and the unloading of the board | substrate 1 from the chuck 10 are performed using the pin pushed up from the some provided in the chuck 10. The pin pushed up from below is housed in the inside of the chuck 10, and lifts from the inside of the chuck 10 to load the substrate 1 into the chuck 10. Is passed and the substrate 1 is passed to the substrate transport robot when the substrate 1 is unloaded from the chuck 10.

The chuck 10 is mounted on the θ stage 8 via the chuck support 9, and a Y stage 7 and an X stage 5 are provided below the θ stage 8. The X stage 5 is mounted on the X guide 4 provided in the base 3, and moves along the X guide 4 in the X direction (the horizontal direction in the drawing of FIG. 1). The Y stage 7 is mounted on the Y guide 6 provided in the X stage 5 and moves along the Y guide 6 in the Y direction (inner direction of the drawing in FIG. 1). The θ stage 8 is mounted on the Y stage 7 and rotates in the θ direction. The chuck support 9 is mounted on the θ stage 8 to support the chuck 10 at a plurality of locations.

The chuck 10 is moved between the rod / unload position and the exposure position by the movement in the X direction of the X stage 5 and the movement in the Y direction of the Y stage 7. At the load / unload position, the chuck 10 is moved by the movement of the X stage 5 in the X direction, the movement of the Y stage 7 in the Y direction, and the rotation of the θ stage 8 in the θ direction. Pre-alignment of the board | substrate 1 mounted in the is performed. At the exposure position, step movement in the XY direction of the substrate 1 mounted on the chuck 10 is performed by the movement in the X direction of the X stage 5 and the movement of the Y stage 7 in the Y direction. Lose. In addition, the gap between the mask 2 and the substrate 1 is adjusted by moving and tilting the mask holder 20 in the Ｚ direction (up and down direction in the drawing of FIG. 1) by a Ｚ-tilting mechanism (not shown). . The substrate 1 is aligned by the movement of the X stage 5 in the X direction, the movement of the Y stage 7 in the Y direction, and the rotation of the θ stage 8 in the θ direction. .

In the present embodiment, the gap between the mask 2 and the substrate 1 is adjusted by moving and tilting the mask holder 20 in the Ｚ direction, but the Ｚ-tilt mechanism is provided on the chuck support 9. The gap between the mask 2 and the substrate 1 may be adjusted by moving and tilting the chuck 10 in the X direction.

The exposure light irradiation device 30 includes a collimating lens group 32, a plane mirror 33, an illuminance sensor 35, and a light source unit 40. The light source unit 40 described later generates exposure light when the substrate 1 is exposed, and does not generate exposure light when the substrate 1 is not exposed. The exposure light generated from the light source unit 40 passes through the collimating lens group 32 to become a parallel light beam, is reflected by the plane mirror 33, and is irradiated onto the mask 2. The pattern of the mask 2 is transferred to the board | substrate 1 by the exposure light irradiated to the mask 2, and the board | substrate 1 is exposed.

The illuminance sensor 35 is arrange | positioned in the vicinity of the back surface of the plane mirror 33. As shown in FIG. The plane mirror 33 is provided with a small opening through which a part of the exposure light passes. The illuminance sensor 35 receives the light passing through the opening of the plane mirror 33, and measures the illuminance of the exposure light. The measurement result of the illuminance sensor 35 is input to the light source unit 40.

2 is a view showing a light source unit of a proximity exposure apparatus according to an embodiment of the present invention. The light source unit 40 includes the base substrate 41, the semiconductor light emitting element 42, the magnifying lens 43, the fly's eye lens 45, the control circuit 46, the cooling member 47, and the cooling device 48. , And a concave mirror 50 is configured. A plurality of semiconductor light emitting elements 42 are mounted on the base substrate 41. The base substrate 41 drives each semiconductor light emitting element 42 by the control of the control circuit 46. Each semiconductor light emitting element 42 is made of a light emitting diode, a laser diode, or the like, and generates light for forming exposure light. The control circuit 46 controls the driving of each semiconductor light emitting element 42 based on the measurement result of the illuminance sensor 35.

In Fig. 2, nine semiconductor light emitting elements 42 are shown, and hundreds to thousands of semiconductor light emitting elements are used for the actual light source unit.

The base substrate 41 is flat and mounts the plurality of semiconductor light emitting elements 42 on the same plane. Since the base substrate 41 is flat and the plurality of semiconductor light emitting elements 42 are mounted on the same plane, the plurality of semiconductor light emitting elements 42 can be easily installed on the same plane at the same attachment angle.

The cooling member 47 is attached to the rear surface of the base substrate 41. The cooling member 47 has a cooling water passage through which cooling water flows, and cools each semiconductor light emitting element 42 by the cooling water supplied from the cooling device 48 to the cooling water passage. The cooling member 47 and the cooling device 48 are not limited thereto, and may be of an air cooling type including a heat sink and a cooling fan.

Corresponding to each semiconductor light emitting element 42 mounted on the base substrate 41, an enlarged lens 43 is provided, and each enlarged lens 43 enlarges the light generated from each semiconductor light emitting element 42. In the optical path from the plurality of magnification lenses 43 to the fly's eye lens 45, a concave mirror 50 having a parabolic mirror surface is provided, and the concave mirror 50 is enlarged by a plurality of magnification lenses 43. The light is reflected and irradiated to the fly's eye lens 45. The fly's eye lens 45 is enlarged by the plurality of magnifying lenses 43 and overlaps the light reflected by the concave mirror to form exposure light with a uniform illuminance distribution. At this time, the light incident from the concave mirror 50 to the fly's eye lens 45 at an incidence angle greater than the predetermined angle α is off the irradiation surface of the fly's eye lens 45 and is not used for forming the exposure light.

3 is a view for explaining the arrangement of the concave mirror, the semiconductor light emitting element, and the fly's eye lens. In FIG. 3A, since the mirror surface of the concave mirror 50 is a parabolic surface, when the light generated from the focus F of the concave mirror 50 is reflected by the mirror surface of the concave mirror 50, all become parallel. In addition, when the light incident in parallel with the normal line MF passing through the focal point F of the concave mirror 50 is reflected by the mirror surface of the concave mirror 50, all the light is collected at the focal point F. In FIG. 3B, light incident at an angle with respect to the normal line MF passing through the focal point F of the concave mirror 50 is reflected at the mirror surface of the concave mirror 50, and the position is different depending on the incident angle. Gathered at P, the distance from the center M of the concave mirror 50 at the point P is equal to the focal length f. Therefore, the point where parallel incident light is reflected and collected at the mirror surface of the parabolic surface of the concave mirror 50 is located on the circumference of the radius f from the center M of the concave mirror 50 shown by broken lines in FIG.

In the present invention, the distance from the center of the semiconductor light emitting element group in which the base substrate 41 and the fly's eye lens 45 are mounted on the base substrate 41 to the center M of the concave mirror 50 and the center of the concave mirror 50 are shown. The distance from M to the center of the incident surface of the fly's eye lens 45 is arranged to be equal to the focal length f of the concave mirror 50. Therefore, as shown in FIG. 3 (c), the center of the semiconductor light emitting element group mounted on the base substrate 41 and the center of the incident surface of the fly's eye lens 45 have a broken line 50 in the broken line. It is located on the circumference of the radius f from the center M. In addition, in the present invention, the center position of the semiconductor light emitting element group in which the base substrate 41 and the fly eye lens 45 are mounted on the base substrate 41 and the center position of the incident surface of the fly eye lens 45 are It arrange | positions so that it may become symmetric with the normal line MF passing through the focal point F of the concave mirror 50. When the base substrate 41 and the fly's eye lens 45 are arranged in this way, as shown in FIG. 3C, the point P where the optical axes of incident light from the semiconductor light emitting elements 42 to the concave mirror 50 converges is obtained. , Located at the center of the incident surface of the fly's eye lens 45.

4 is a view for explaining the operation of the light source unit. Since the point P where the optical axis of the incident light from each semiconductor light emitting element 42 into the concave mirror 50 is located at the center of the incidence surface of the fly's eye lens 45, the same attachment is made on the same plane of the base substrate 41. As shown in FIG. 4, the optical axis of the light which generate | occur | produces from each semiconductor light-emitting element 42 provided at the angle, and obliquely enters the concave mirror 50 at the same angle with respect to the normal line MF passing through the focal point F of the concave mirror 50 is shown in FIG. And reflects from the mirror surface of the parabolic surface of the concave mirror 50 and heads toward the center of the incident surface of all the fly's eye lenses 45. Therefore, in the present invention, the plurality of semiconductor light emitting elements 42 and the plurality of magnifying lenses 43 are generated from the respective semiconductor light emitting elements 42 and enlarged by the corresponding magnifying lenses 43, and the concave mirror 50 The optical axis of the reflected light is arranged so as to be incident on the center of the incident surface of the fly's eye lens 45 within a predetermined angle α which does not deviate from the irradiation surface of the fly's eye lens 45.

At this time, there are two requirements for disposing the plurality of semiconductor light emitting elements 42 and the plurality of magnifying lenses 43, one of which is the magnifying lens 43 corresponding to the optical axis of each semiconductor light emitting element 42. The optical axes of are coincident. In addition, in FIG. 4, the fly's eye lens (from the center M of the concave mirror 50) is applied to a predetermined angle α at which the incident light of the fly's eye lens 45 does not deviate from the irradiation surface of the fly's eye lens 45. The distance L to the center of the incident surface of (45) (in the present invention, the same as the focal length f of the concave mirror 50) and the distance h from the center to the end of the semiconductor light emitting element group,

L = h ／ tanα

To meet the relationship.

5 is a diagram illustrating a relationship between the distance between semiconductor light emitting elements and the distance from the center of the concave mirror to the center of the incident surface of the fly's eye lens. Since the action of the concave mirror 50 can be thought of as a convex lens, in Fig. 5, when the concave mirror 50 represented by the broken line is replaced by a convex lens 50 'of the same magnification, L and h represent the above equation. When satisfied, the optical axis of the light generated from each semiconductor light emitting element 42 and enlarged by the corresponding magnifying lens 43 and reflected by the concave mirror 50 does not deviate from the irradiation surface of the fly's eye lens 45. It is understood that the incident to the fly's eye lens 45 is within a predetermined angle α.

In the above formula, α is a value determined by the optical characteristics of the fly's eye lens 45, and differs for each kind of fly's eye lens used. In addition, in this invention, L is the same as the focal length f of the concave mirror 50, and becomes a value determined according to the optical characteristic of the concave mirror 50. As shown in FIG. Therefore, in the present invention, the value of the focal length f of the concave mirror 50 and the distance 2h from the end of the semiconductor light emitting device group to the above equation are determined according to the optical characteristics of the fly-eye lens to be used. do. In relation to the above equation, the distance from the center M of the concave mirror 50 to the center of the incident surface of the fly's eye lens 45 is reduced as the entire light source is made smaller and the distance h from the center of the semiconductor light emitting device group to the end is shorter. It is possible to reduce the size of the light source unit 40 by shortening L.

In Fig. 4, the angle of incidence of each optical axis from the concave mirror 50 to the fly's eye lens 45 is determined by the arrangement of the plurality of semiconductor light emitting elements 42 and the plurality of magnifying lenses 43 that satisfy the two requirements described above. As a result, the predetermined angle α does not deviate from the irradiation surface of the fly's eye lens 45. Therefore, in FIG. 2, most of the light generated from each semiconductor light emitting element 42 and enlarged by the corresponding magnification lens 43 and reflected by the concave mirror 50 is irradiated by the fly's eye lens 45. Incidentally, it enters into the fly-eye lens 45 within predetermined angle (alpha) which does not deviate from a surface, and is used for formation of exposure light. Therefore, when the exposure light is formed by superimposing light generated from the plurality of semiconductor light emitting elements 42 with the fly-eye lens 45, the installation of each semiconductor light emitting element 42 is facilitated, and each semiconductor light emitting element ( The light of 42) is used efficiently, and exposure light with high illuminance is formed.

In addition, in this embodiment, in FIG. 2, each magnification lens 43 enlarges the light generated from each semiconductor light emitting element 42 so that the light reflected from the concave mirror 50 becomes a substantially parallel beam flux. Irradiate with a concave mirror (50). By properly setting the magnification of the magnifying lens 43, since the light reflected by the concave mirror 50 becomes a substantially parallel beam beam, almost all of the light reflected by the concave mirror 50 is irradiated by the fly's eye lens 45. It enters into the fly's eye lens 45 within a predetermined angle without departing from it, and is used to form exposure light. Therefore, the light of each semiconductor light emitting element 42 is used more efficiently, and exposure light with higher illumination is formed.

6 is a view showing an example of a base substrate. In this example, the base substrate 41 is configured by combining a plurality of flat substrates 41a. 6, nine board | substrates 41a are shown, but the actual base board | substrate 41 is comprised combining the several board | substrate 41a.

When the base substrate 41 is formed by combining a plurality of flat substrates 41a, the base substrate 41 is appropriately sized according to the optical characteristics of the fly's eye lens 45 and the concave mirror 50. The arrangement of the required group of semiconductor light emitting elements described above can be realized. That is, the value of the distance h from the center to the end of the group of semiconductor light emitting elements determined according to the optical characteristics of the fly's eye lens 45 and the concave mirror 50 can be realized.

7 is a diagram illustrating an example of a substrate. In this example, each board | substrate 41a is a shape which has the unevenness | corrugation which fits like a piece of jigsaw puzzle in one direction. However, in the mounted state, the substrates 41a do not need to be in contact without gaps, and there may be a few millimeters of suitable gaps between the substrates 41a. Each semiconductor light emitting element 42 mounted on each substrate 41a is disposed at a position of each vertex of a plurality of equilateral triangles adjacent to each other without a gap, indicated by a broken line. When the interval in the vertical direction of each semiconductor light emitting element 42 is d, the interval in the horizontal direction of each semiconductor light emitting element 42 is

√3 × d / 2

.

In the example shown in Fig. 7, nine semiconductor light emitting elements 42 are mounted on one substrate 41a. However, the present invention is not limited thereto, and eight or less or ten or more substrates are used on one substrate 41a. The semiconductor light emitting element 42 may be mounted.

Fig. 8A is a front view of an example of an enlarged lens, and Fig. 8B is a side view thereof. In this example, the plurality of magnifying lenses 43 are configured for each of the substrates 41a corresponding to each of the substrates 41a constituting the base substrate 41. The base substrate 41 is formed by combining a plurality of flat substrates 41a, and the plurality of magnification lenses 43 are configured for each of the substrates 41a. Therefore, the optical axis of each magnification lens 43 is formed each time. Can be easily adjusted.

In Fig. 8A, each of the magnifying lenses 43 is arranged so that the sections perpendicular to the optical axis are regular hexagons, adjacent to each other, without gaps. 9 is a front view of the base substrate and the magnifying lens. Each semiconductor light emitting element 42 is disposed at a position of each vertex of a plurality of equilateral triangles adjacent to each other without a gap, and each of the magnifying lenses 43 is formed with a regular hexagon having a cross section perpendicular to the optical axis of each of the magnifying lenses 43. Since they are arranged adjacent to each other without a gap, the plurality of semiconductor light emitting elements 42 and the plurality of magnifying lenses 43 are evenly and uniformly arranged, and the entire light source is small.

In addition, when each semiconductor light emitting element 42 is disposed at a position of each vertex of a plurality of equilateral triangles adjacent to each other without a gap, as shown in FIG. 7, each substrate 41a is arranged in a jigsaw puzzle in one direction. As shown in FIG. 6, when the substrates 41a are combined in opposite directions for each example, the substrates 41a are combined in each row and in the same direction, and each substrate ( Rather than shifting the position of 41a) from one example to another, the longitudinal dimension of the entire base substrate 41 can be made smaller.

According to the embodiment described above, when the exposure light is formed by superimposing the light generated from the plurality of semiconductor light emitting elements 42 with the fly-eye lens 45, the installation of each semiconductor light emitting element 42 is facilitated, In addition, by using the light of each semiconductor light emitting element 42 efficiently, exposure light with high illumination can be formed.

In addition, each magnification lens 43 enlarges the light emitted from each semiconductor light emitting element 42 and irradiates the concave mirror 50 so that the light reflected by the concave mirror 50 becomes a substantially parallel light beam. By using the light of the semiconductor light emitting element 42 more efficiently, it is possible to form exposure light with higher illumination.

In addition, the base substrate 41 is formed by combining a plurality of flat substrates 41a, and the plurality of magnification lenses 43 are formed for each of the substrates 41a, whereby the fly's eye lens 45 and the concave mirror 50 are formed. According to the optical characteristics, it is possible to realize the necessary arrangement of the group of semiconductor light emitting elements by setting the size of the base substrate 41 to an appropriate size, and at the same time, the optical axis of each magnifying lens 43 can be easily adjusted for each substrate 41a. .

In addition, each semiconductor light emitting element 42 is disposed at a position of each vertex of a plurality of equilateral triangles adjacent to each other without a gap, and each of the magnifying lenses 43 is a hexagon that has a cross section perpendicular to the optical axis of each of the magnifying lenses 43. ) Are arranged adjacent to each other without a gap, so that the plurality of semiconductor light emitting elements 42 and the plurality of magnifying lenses 43 are evenly and evenly disposed, and the entire light source can be miniaturized.

The exposure is performed using the proximity exposure apparatus of the present invention, or the exposure light formed using the exposure light forming method of the proximity exposure apparatus of the present invention is irradiated to the substrate through a mask to expose the substrate. Since the illuminance of the exposure light increases, the exposure time is shortened, and the lifetime of the light source of the exposure light is long, so that the productivity of the display panel substrate can be improved.

For example, FIG. 10 is a flowchart showing an example of the manufacturing process of the TFT substrate of the liquid crystal display device. In the thin film formation step (step 101), a thin film such as a conductor film or insulator film, which becomes a transparent electrode for driving a liquid crystal, is formed on a substrate by a spatter method, plasma chemical vapor deposition (CVD) method, or the like. In the resist coating step (step 102), a photoresist material (photoresist) is applied by a roll coating method or the like to form a photoresist film on the thin film formed in the thin film forming step (step 101). In the exposure step (step 103), the pattern of the mask is transferred to the photoresist film using a proximity exposure device, a projection exposure device, or the like. In the developing step (step 104), the developer is supplied onto the photoresist film by a shower development method or the like to remove unnecessary portions of the photoresist film. In the etching step (step 105), portions of the thin film formed in the thin film forming step (step 101) that are not masked with the photoresist film are removed by wet etching. In a peeling process (step 106), the photoresist film which completed the role of the mask in an etching process (step 105) is peeled with a peeling liquid. Before or after each of these steps, a washing / drying step of the substrate is performed as necessary. These processes are repeated several times to form a TFT array on the substrate.

11 is a flowchart showing an example of the manufacturing process of the color filter substrate of the liquid crystal display device. In the black matrix forming step (step 201), a black matrix is formed on the substrate by processing such as resist coating, exposure, development, etching, and peeling. In the coloring pattern forming step (step 202), a coloring pattern is formed on the substrate by a dyeing method, a pigment dispersion method, a printing method, an electrodeposition method, or the like. This process is repeated for the coloring patterns of R, V, and V. In a protective film formation process (step 203), a protective film is formed on a coloring pattern, and in a transparent electrode film formation process (step 204), a transparent electrode film is formed on a protective film. Before, during, or after each of these steps, the substrate is cleaned and dried as necessary.

In the manufacturing process of the TFT substrate shown in FIG. 10, in the exposure process (step 103), in the manufacturing process of the color filter substrate shown in FIG. 11, the black matrix forming step (step 201) and the color pattern forming step (step 202) are performed. In the exposure process, the exposure light forming method of the proximity exposure apparatus or the proximity exposure apparatus of the present invention can be applied.

1: substrate
2: mask
3: Base
4: X guide
5: X stage
6: Y guide
7: Y stage
8: θ stage
9: chuck support
10: chuck
20: mask holder
30: exposure light irradiation device
32: collimating lens group
33: flat mirror
35: Ambient light sensor
40: light source unit
41: base substrate
41a: substrate
42: semiconductor light emitting element
43: magnifying lens
45: fly's eye lens
46: control circuit
47: cooling member
48: chiller
50: concave mirror

Claims (10)

A plurality of semiconductor light emitting elements for generating light for forming exposure light,
A base substrate on which the plurality of semiconductor light emitting elements are mounted;
A plurality of magnifying lenses provided corresponding to each semiconductor light emitting element, and for enlarging light generated from each semiconductor light emitting element;
Equipped with a fly's eye lens,
A proximity exposure apparatus for forming exposure light by overlapping light enlarged by the plurality of magnifying lenses with the fly's eye lens,
A concave mirror provided in an optical path from the plurality of magnifying lenses to the fly's eye lens, having a parabolic mirror surface, and reflecting light enlarged by the plurality of magnifying lenses to irradiate the fly's eye lens;
The base substrate is flat and mounts the plurality of semiconductor light emitting devices on the same plane.
The base substrate and the fly's eye lens have a distance from the center of the group of semiconductor light emitting elements mounted on the base substrate to the center of the concave mirror and the distance from the center of the concave mirror to the center of the incident surface of the fly's eye lens, The center position of the group of semiconductor light emitting devices mounted on the base substrate and the center position of the incident surface of the fly's eye lens are symmetrical with the normal line passing through the focal point of the concave mirror interposed therebetween. Deployed,
The plurality of semiconductor light emitting elements and the plurality of magnification lenses are generated by respective semiconductor light emitting elements and enlarged by corresponding magnification lenses, and the optical axis of the light reflected by the concave mirror does not deviate from the irradiation surface of the fly's eye lens. Proximity exposure apparatus, characterized in that arranged to be incident to the fly's eye lens within a predetermined angle. The method of claim 1,
And each magnification lens enlarges the light generated from each semiconductor light emitting element and irradiates it with the concave mirror so that the light reflected from the concave mirror becomes a substantially parallel beam flux. 3. The method according to claim 1 or 2,
And the base substrate is configured by combining a plurality of flat substrates, and the plurality of magnifying lenses are configured for each of the substrates. 4. The method according to any one of claims 1 to 3,
Each semiconductor light emitting element is disposed at a position of each vertex of a plurality of equilateral triangles adjacent to each other without a gap;
Each magnification lens has a regular hexagonal cross section perpendicular to the optical axis and is arranged adjacent to each other without a gap. A plurality of semiconductor light emitting devices are mounted on a base substrate to generate light for forming exposure light from each semiconductor light emitting device,
A plurality of magnifying lenses are provided corresponding to each semiconductor light emitting element, and the light generated from each semiconductor light emitting element is magnified by a corresponding magnifying lens;
An exposure light forming method of a proximity exposure apparatus that forms exposure light by overlapping light enlarged by a plurality of magnifying lenses with a fly-eye lens,
In the optical path from the plurality of magnifying lenses to the fly's eye lens, a concave mirror having a parabolic surface, reflecting light enlarged by the plurality of magnifying lenses and irradiating the fly's eye lens,
The base substrate is formed flat to mount a plurality of semiconductor light emitting devices on the same plane.
The distance from the center of the semiconductor light emitting element group in which the base substrate and the fly eye lens are mounted on the base substrate to the center of the concave mirror and the distance from the center of the concave mirror to the center of the incident surface of the fly eye lens are the same as the focal length of the concave mirror. The center position of the group of semiconductor light emitting devices mounted on the base substrate and the center position of the incident surface of the fly's eye lens are arranged to be symmetrical with a normal line passing through the focal plane,
A plurality of semiconductor light emitting elements and a plurality of magnifying lenses are generated by each of the semiconductor light emitting elements and enlarged by corresponding magnifying lenses, and the optical axis of the light reflected by the concave mirror does not deviate from the irradiation surface of the fly's eye lens within a predetermined angle. To be incident on the fly's eye lens,
A method for forming exposure light of a proximity exposure apparatus, wherein light generated from a plurality of semiconductor light emitting elements and enlarged by a plurality of magnifying lenses is reflected by a concave mirror and irradiated with a fly's eye lens. 6. The method of claim 5,
The exposure light forming method of the proximity exposure apparatus, wherein the magnified light is enlarged and irradiated with a concave mirror so that the light reflected from the concave mirror becomes a substantially parallel beam flux by each magnification lens. The method according to claim 5 or 6,
A base substrate is formed by combining a plurality of flat substrates, and a plurality of magnifying lenses are configured for each of the substrates. 8. The method according to any one of claims 5 to 7,
Each semiconductor light emitting element is arranged at a position of each vertex of a plurality of equilateral triangles adjacent to each other without a gap;
A cross section perpendicular to the optical axis of each magnification lens is a regular hexagon, and each magnification lens is disposed adjacent to each other without a gap. A method for manufacturing a display panel substrate, wherein the substrate is exposed using the proximity exposure apparatus according to any one of claims 1 to 4. An exposure light formed using the exposure light forming method of the proximity exposure apparatus according to any one of claims 5 to 8 is irradiated to a substrate through a mask, and the substrate is exposed. Method for manufacturing panel substrate.

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