KR20130054184A - 고주파 안테나 회로 및 유도 결합 플라즈마 처리 장치 - Google Patents

고주파 안테나 회로 및 유도 결합 플라즈마 처리 장치 Download PDF

Info

Publication number
KR20130054184A
KR20130054184A KR1020120128714A KR20120128714A KR20130054184A KR 20130054184 A KR20130054184 A KR 20130054184A KR 1020120128714 A KR1020120128714 A KR 1020120128714A KR 20120128714 A KR20120128714 A KR 20120128714A KR 20130054184 A KR20130054184 A KR 20130054184A
Authority
KR
South Korea
Prior art keywords
antenna
split
inductively coupled
processing apparatus
coupled plasma
Prior art date
Application number
KR1020120128714A
Other languages
English (en)
Korean (ko)
Inventor
가즈오 사사키
츠토무 사토요시
Original Assignee
도쿄엘렉트론가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20130054184A publication Critical patent/KR20130054184A/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q7/00—Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2242/00—Auxiliary systems
    • H05H2242/20—Power circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020120128714A 2011-11-15 2012-11-14 고주파 안테나 회로 및 유도 결합 플라즈마 처리 장치 KR20130054184A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2011-249826 2011-11-15
JP2011249826A JP2013105664A (ja) 2011-11-15 2011-11-15 高周波アンテナ回路及び誘導結合プラズマ処理装置

Publications (1)

Publication Number Publication Date
KR20130054184A true KR20130054184A (ko) 2013-05-24

Family

ID=48315960

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120128714A KR20130054184A (ko) 2011-11-15 2012-11-14 고주파 안테나 회로 및 유도 결합 플라즈마 처리 장치

Country Status (4)

Country Link
JP (1) JP2013105664A (zh)
KR (1) KR20130054184A (zh)
CN (1) CN103108483A (zh)
TW (1) TWI645069B (zh)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150077533A (ko) * 2013-12-27 2015-07-08 세메스 주식회사 플라즈마 발생 장치 및 그를 포함하는 기판 처리 장치
KR20160018152A (ko) * 2014-08-08 2016-02-17 엘아이지인베니아 주식회사 플라즈마 처리장치용 플라즈마 발생모듈
KR20160066871A (ko) * 2014-12-03 2016-06-13 인베니아 주식회사 플라즈마 발생모듈 및 이를 포함하는 플라즈마 처리장치
KR20160068254A (ko) * 2014-12-05 2016-06-15 인베니아 주식회사 플라즈마 발생모듈 및 이를 포함하는 플라즈마 처리장치
US11456154B2 (en) 2014-04-29 2022-09-27 Semes Co., Ltd. Plasma-generating unit and substrate treatment apparatus including the same

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015138602A (ja) * 2014-01-21 2015-07-30 株式会社アルバック プラズマ処理用整合器、プラズマ処理装置、および、プラズマ処理用整合器の駆動方法
JP6305825B2 (ja) * 2014-05-12 2018-04-04 東京エレクトロン株式会社 プラズマ処理装置およびそれに用いる排気構造
KR101652845B1 (ko) * 2014-08-08 2016-09-01 인베니아 주식회사 플라즈마 발생모듈 및 이를 포함하는 플라즈마 처리장치
CN104579196B (zh) * 2015-01-28 2018-06-05 中国科学院微电子研究所 一种射频信号放大器
KR20180116225A (ko) 2016-01-22 2018-10-24 에스피피 테크놀로지스 컴퍼니 리미티드 플라즈마 제어 장치
JP6851188B2 (ja) * 2016-11-28 2021-03-31 東京エレクトロン株式会社 プラズマ処理装置及びシャワーヘッド
KR20180092684A (ko) * 2017-02-10 2018-08-20 주식회사 유진테크 Icp 안테나 및 이를 포함하는 기판 처리 장치
JP6353963B2 (ja) * 2017-07-13 2018-07-04 東京エレクトロン株式会社 マイクロ波プラズマ処理装置及びマイクロ波供給方法
JP7139181B2 (ja) 2018-07-26 2022-09-20 ワイエイシイテクノロジーズ株式会社 プラズマ処理装置
US11515122B2 (en) * 2019-03-19 2022-11-29 Tokyo Electron Limited System and methods for VHF plasma processing
JP2021026846A (ja) * 2019-08-01 2021-02-22 東京エレクトロン株式会社 プラズマ処理装置及び制御方法
KR102137913B1 (ko) * 2019-10-29 2020-07-24 주식회사 기가레인 플라즈마 안테나 모듈
JP7515423B2 (ja) 2021-01-22 2024-07-12 東京エレクトロン株式会社 プラズマ処理装置の異常検知方法及びプラズマ処理装置
WO2024201904A1 (ja) * 2023-03-30 2024-10-03 ワイエイシイテクノロジーズ株式会社 プラズマ処理装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3935401B2 (ja) * 2002-07-22 2007-06-20 東京エレクトロン株式会社 誘導結合プラズマ処理装置
JP2006278219A (ja) * 2005-03-30 2006-10-12 Utec:Kk Ｉｃｐ回路、プラズマ処理装置及びプラズマ処理方法
JP5399151B2 (ja) * 2008-10-27 2014-01-29 東京エレクトロン株式会社 誘導結合プラズマ処理装置、プラズマ処理方法及び記憶媒体
JP5479867B2 (ja) * 2009-01-14 2014-04-23 東京エレクトロン株式会社 誘導結合プラズマ処理装置
JP5231308B2 (ja) * 2009-03-31 2013-07-10 東京エレクトロン株式会社 プラズマ処理装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150077533A (ko) * 2013-12-27 2015-07-08 세메스 주식회사 플라즈마 발생 장치 및 그를 포함하는 기판 처리 장치
US11456154B2 (en) 2014-04-29 2022-09-27 Semes Co., Ltd. Plasma-generating unit and substrate treatment apparatus including the same
KR20160018152A (ko) * 2014-08-08 2016-02-17 엘아이지인베니아 주식회사 플라즈마 처리장치용 플라즈마 발생모듈
KR20160066871A (ko) * 2014-12-03 2016-06-13 인베니아 주식회사 플라즈마 발생모듈 및 이를 포함하는 플라즈마 처리장치
KR20160068254A (ko) * 2014-12-05 2016-06-15 인베니아 주식회사 플라즈마 발생모듈 및 이를 포함하는 플라즈마 처리장치

Also Published As

Publication number Publication date
JP2013105664A (ja) 2013-05-30
TW201337034A (zh) 2013-09-16
CN103108483A (zh) 2013-05-15
TWI645069B (zh) 2018-12-21

Similar Documents

Publication Publication Date Title
KR20130054184A (ko) 고주파 안테나 회로 및 유도 결합 플라즈마 처리 장치
KR102508029B1 (ko) 유도 결합 플라즈마용 안테나 유닛, 유도 결합 플라즈마 처리 장치 및 유도 결합 플라즈마 처리 방법
JP5399151B2 (ja) 誘導結合プラズマ処理装置、プラズマ処理方法及び記憶媒体
CN111430210B (zh) 电感耦合等离子体处理装置
KR101406676B1 (ko) 유도 결합 플라즈마 처리 장치
KR102345906B1 (ko) 정합기 및 플라즈마 처리 장치
KR102000797B1 (ko) 플라즈마 처리 장치 및 플라즈마 분포 조정 방법
KR101432907B1 (ko) 유도 결합 플라즈마용 안테나 유닛 및 유도 결합 플라즈마 처리 장치
TWI600048B (zh) Inductively coupled plasma processing device
KR20120120043A (ko) 유도 결합 플라즈마 처리 장치
KR102660299B1 (ko) 기판 처리 장치, 고조파 제어 유닛 및 고조파 제어 방법
KR20100047158A (ko) 유도 결합 플라즈마 처리 장치, 플라즈마 처리 방법 및 기억 매체

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
AMND Amendment
E90F Notification of reason for final refusal