KR20130035217A - 산화물 반도체를 이용한 박막 트랜지스터의 제조 방법 및 제조 장치 - Google Patents

산화물 반도체를 이용한 박막 트랜지스터의 제조 방법 및 제조 장치 Download PDF

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Publication number
KR20130035217A
KR20130035217A KR1020120107995A KR20120107995A KR20130035217A KR 20130035217 A KR20130035217 A KR 20130035217A KR 1020120107995 A KR1020120107995 A KR 1020120107995A KR 20120107995 A KR20120107995 A KR 20120107995A KR 20130035217 A KR20130035217 A KR 20130035217A
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KR
South Korea
Prior art keywords
lamp
light
flash lamp
oxide
thin film
Prior art date
Application number
KR1020120107995A
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English (en)
Korean (ko)
Inventor
다츠시 오와다
아키라 가토
준이치로 모리
신지 스즈키
Original Assignee
우시오덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 우시오덴키 가부시키가이샤 filed Critical 우시오덴키 가부시키가이샤
Publication of KR20130035217A publication Critical patent/KR20130035217A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
KR1020120107995A 2011-09-29 2012-09-27 산화물 반도체를 이용한 박막 트랜지스터의 제조 방법 및 제조 장치 KR20130035217A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011214414A JP5418563B2 (ja) 2011-09-29 2011-09-29 酸化物半導体を用いた薄膜トランジスタの製造方法および製造装置
JPJP-P-2011-214414 2011-09-29

Publications (1)

Publication Number Publication Date
KR20130035217A true KR20130035217A (ko) 2013-04-08

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ID=48022312

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120107995A KR20130035217A (ko) 2011-09-29 2012-09-27 산화물 반도체를 이용한 박막 트랜지스터의 제조 방법 및 제조 장치

Country Status (4)

Country Link
JP (1) JP5418563B2 (zh)
KR (1) KR20130035217A (zh)
CN (1) CN103035531A (zh)
TW (1) TW201314793A (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101796626B1 (ko) * 2014-05-29 2017-11-13 에이피시스템 주식회사 기판 열처리 장치
JP6472247B2 (ja) * 2015-01-07 2019-02-20 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
JP6527733B2 (ja) * 2015-03-25 2019-06-05 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
KR101818721B1 (ko) * 2015-03-27 2018-02-21 에이피시스템 주식회사 반도체 소자 제조 장치 및 이를 이용한 반도체 소자 제조 방법
JP6654716B2 (ja) * 2019-01-21 2020-02-26 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法およびゲート形成方法
JP7192588B2 (ja) * 2019-03-12 2022-12-20 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP2022017022A (ja) * 2020-07-13 2022-01-25 ウシオ電機株式会社 光加熱装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5282409B2 (ja) * 2008-02-25 2013-09-04 ウシオ電機株式会社 光照射式加熱方法及び光照射式加熱装置
JP2010123758A (ja) * 2008-11-19 2010-06-03 Nec Corp 薄膜デバイス及びその製造方法
JP5763876B2 (ja) * 2009-05-08 2015-08-12 コニカミノルタ株式会社 薄膜トランジスタ、及びその製造方法
CN104835850B (zh) * 2009-07-10 2018-10-26 株式会社半导体能源研究所 半导体器件

Also Published As

Publication number Publication date
JP5418563B2 (ja) 2014-02-19
TW201314793A (zh) 2013-04-01
JP2013074255A (ja) 2013-04-22
CN103035531A (zh) 2013-04-10

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