KR20130032281A - 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체 - Google Patents

기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체 Download PDF

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Publication number
KR20130032281A
KR20130032281A KR1020120105468A KR20120105468A KR20130032281A KR 20130032281 A KR20130032281 A KR 20130032281A KR 1020120105468 A KR1020120105468 A KR 1020120105468A KR 20120105468 A KR20120105468 A KR 20120105468A KR 20130032281 A KR20130032281 A KR 20130032281A
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KR
South Korea
Prior art keywords
substrate
processing
film
gas
processing chamber
Prior art date
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Abandoned
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KR1020120105468A
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English (en)
Korean (ko)
Inventor
마사노리 나카야마
Original Assignee
가부시키가이샤 히다치 고쿠사이 덴키
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Publication of KR20130032281A publication Critical patent/KR20130032281A/ko
Abandoned legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45519—Inert gas curtains
    • C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Plasma Technology (AREA)
KR1020120105468A 2011-09-22 2012-09-21 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체 Abandoned KR20130032281A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011207452 2011-09-22
JPJP-P-2011-207452 2011-09-22
JP2012187884A JP5933394B2 (ja) 2011-09-22 2012-08-28 基板処理装置、半導体装置の製造方法及びプログラム
JPJP-P-2012-187884 2012-08-28

Publications (1)

Publication Number Publication Date
KR20130032281A true KR20130032281A (ko) 2013-04-01

Family

ID=47911722

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120105468A Abandoned KR20130032281A (ko) 2011-09-22 2012-09-21 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체

Country Status (3)

Country Link
US (1) US20130078789A1 (enExample)
JP (1) JP5933394B2 (enExample)
KR (1) KR20130032281A (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6150937B2 (ja) * 2014-03-25 2017-06-21 株式会社日立国際電気 基板処理装置、温度制御方法及び半導体装置の製造方法並びに記録媒体
JP6183965B2 (ja) * 2014-03-27 2017-08-23 Ｓｐｐテクノロジーズ株式会社 シリコン酸化膜及びその製造方法、並びにシリコン酸化膜の製造装置
WO2016104292A1 (ja) * 2014-12-25 2016-06-30 株式会社日立国際電気 半導体装置の製造方法、記録媒体及び基板処理装置
JP6285052B2 (ja) * 2015-02-02 2018-02-28 株式会社日立国際電気 半導体装置の製造方法、プログラム及び基板処理装置
JP2016225573A (ja) * 2015-06-03 2016-12-28 株式会社東芝 基板処理装置および基板処理方法
JP6479713B2 (ja) * 2016-07-11 2019-03-06 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、プログラムおよび基板処理装置
JP6796431B2 (ja) * 2016-08-12 2020-12-09 東京エレクトロン株式会社 成膜装置、およびそれに用いるガス吐出部材
WO2018052476A1 (en) 2016-09-14 2018-03-22 Applied Materials, Inc. Steam oxidation initiation for high aspect ratio conformal radical oxidation
KR102516339B1 (ko) 2018-04-06 2023-03-31 삼성전자주식회사 광 조사기용 덮개 구조물과 이를 구비하는 광 조사장치 및 이를 이용한 다이 접착 방법

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US4289797A (en) * 1979-10-11 1981-09-15 Western Electric Co., Incorporated Method of depositing uniform films of Six Ny or Six Oy in a plasma reactor
US20020009861A1 (en) * 1998-06-12 2002-01-24 Pravin K. Narwankar Method and apparatus for the formation of dielectric layers
WO2002059956A1 (en) * 2001-01-25 2002-08-01 Tokyo Electron Limited Method of producing electronic device material
JP2002359236A (ja) * 2001-03-27 2002-12-13 Hitachi Kokusai Electric Inc 半導体製造装置
US6465348B1 (en) * 2001-06-06 2002-10-15 United Microelectronics Corp. Method of fabricating an MOCVD titanium nitride layer utilizing a pulsed plasma treatment to remove impurities
JP2003007697A (ja) * 2001-06-21 2003-01-10 Hitachi Kokusai Electric Inc 半導体装置の製造方法、基板処理方法および基板処理装置
DE10134871B4 (de) * 2001-07-18 2006-09-07 Hte Ag The High Throughput Experimentation Company Siebvorrichtung zur Klassierung von Feststoffen und deren Verwendung
JP2003100742A (ja) * 2001-09-27 2003-04-04 Hitachi Kokusai Electric Inc 半導体デバイスの製造方法
JP4090346B2 (ja) * 2002-02-28 2008-05-28 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
US6825126B2 (en) * 2002-04-25 2004-11-30 Hitachi Kokusai Electric Inc. Manufacturing method of semiconductor device and substrate processing apparatus
US20060014384A1 (en) * 2002-06-05 2006-01-19 Jong-Cheol Lee Method of forming a layer and forming a capacitor of a semiconductor device having the same layer
JP4083000B2 (ja) * 2002-12-12 2008-04-30 東京エレクトロン株式会社 絶縁膜の形成方法
JP2006120678A (ja) * 2004-10-19 2006-05-11 Hitachi Kokusai Electric Inc 半導体装置の製造方法
DE102004053707B8 (de) * 2004-11-03 2008-08-28 Schott Ag Verfahren zur Herstellung eines Glaskeramik-Artikels mit Diffusionsbarriere und Verwendung eines verfahrensgemäß hergestellten Glaskeramik-Artikels
JPWO2006129643A1 (ja) * 2005-05-31 2009-01-08 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP4738299B2 (ja) * 2006-09-20 2011-08-03 富士通株式会社 キャパシタ、その製造方法、および電子基板
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JP2011071353A (ja) * 2009-09-25 2011-04-07 Hitachi Kokusai Electric Inc 半導体装置の製造方法

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Publication number Publication date
JP2013080907A (ja) 2013-05-02
US20130078789A1 (en) 2013-03-28
JP5933394B2 (ja) 2016-06-08

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