KR20130030081A - Light emitting device package - Google Patents

Light emitting device package Download PDF

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Publication number
KR20130030081A
KR20130030081A KR1020110093608A KR20110093608A KR20130030081A KR 20130030081 A KR20130030081 A KR 20130030081A KR 1020110093608 A KR1020110093608 A KR 1020110093608A KR 20110093608 A KR20110093608 A KR 20110093608A KR 20130030081 A KR20130030081 A KR 20130030081A
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KR
South Korea
Prior art keywords
light emitting
emitting device
light
device package
layer
Prior art date
Application number
KR1020110093608A
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Korean (ko)
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KR101930309B1 (en
Inventor
조현경
Original Assignee
엘지이노텍 주식회사
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Priority to KR1020110093608A priority Critical patent/KR101930309B1/en
Publication of KR20130030081A publication Critical patent/KR20130030081A/en
Application granted granted Critical
Publication of KR101930309B1 publication Critical patent/KR101930309B1/en

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    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • H01L2224/85481—Tantalum (Ta) as principal constituent

Abstract

PURPOSE: A light emitting device package is provided to improve luminous efficiency by using an antireflection layer. CONSTITUTION: A body includes a cavity(120), a first and a second lead frame. A light emitting device(130) is positioned in the cavity. A resin layer(160) is filled in the cavity. An antireflection layer(170) is positioned in the upper part of the body and the resin layer and has optical transparency.

Description

발광소자 패키지{Light emitting device package}A light emitting device package

실시예는 발광소자 패키지에 관한 것이다.An embodiment relates to a light emitting device package.

발광 다이오드(Light Emitting Diode, LED)는 화합물 반도체의 특성을 이용해 전기 신호를 광의 형태로 변환시키는 소자로, 가정용 가전제품, 리모컨, 전광판, 표시기, 각종 자동화 기기 등에 사용되고 있으며, 점차 사용 영역이 넓어지고 있는 추세이다.Light Emitting Diode (LED) is a device that converts an electric signal into a light form using the characteristics of a compound semiconductor, and is used for home appliances, remote controllers, electronic displays, indicators, and various automation devices. There is a trend.

보통, 소형화된 LED는 PCB(Printed Circuit Board) 기판에 직접 장착하기 위해서 표면실장소자(Surface Mount Device)형으로 만들어지고 있고, 이에 따라 표시소자로 사용되고 있는 LED 램프도 표면실장소자 형으로 개발되고 있다. 이러한 표면실장소자는 기존의 단순한 점등 램프를 대체할 수 있으며, 이것은 다양한 칼라를 내는 점등표시기용, 문자표시기 및 영상표시기 등으로 사용된다.In general, miniaturized LEDs are made of a surface mounting device for mounting directly on a PCB (Printed Circuit Board) substrate, and an LED lamp used as a display device is also being developed as a surface mounting device type . Such a surface mount device can replace a conventional simple lighting lamp, which is used for a lighting indicator for various colors, a character indicator, an image indicator, and the like.

이와 같이 LED의 사용 영역이 넓어지면서, 생활에 사용되는 전등, 구조 신호용 전등 등에 요구되는 휘도 및 신뢰성이 높아지는 바, LED의 발광휘도 및 신뢰성을 증가시키는 것이 중요하다.As the usage area of the LED is widened as described above, the luminance and reliability required for electric light used for living, electric light for rescue signals, etc. are increased, and it is important to increase the luminous brightness and reliability of the LED.

공개특허 10-2010-0056297에서는 절곡된 리드프레임을 구비하는 발광소자 패키지를 개시하여, 리드프레임과 패키지 몸체 사이의 틈으로 침투하는 외부 습기나 공기를 방지하나, 수지층과 패키지 몸체 사이 또는 수지층 자체를 통하여 침투하는 외부 습기나 공기를 방지하지 못하는 문제점이 있다.Patent Document 10-2010-0056297 discloses a light emitting device package having a bent lead frame to prevent external moisture or air penetrating into the gap between the lead frame and the package body, but between the resin layer and the package body or the resin layer There is a problem that does not prevent external moisture or air penetrating through itself.

실시예는 반사 방지막을 포함하여, 수지층 내부 및 수지층과 몸체 사이의 공간으로 외부 수분이 침투하여 리드프레임이 산화되는 것을 방지하고자 한다.The embodiment includes an antireflection film to prevent oxidation of the lead frame due to penetration of external moisture into the resin layer and the space between the resin layer and the body.

아울러, 반사 방지막은 투광성을 가지며 anti-reflector 로서 기능하여, 발광소자에서 생성된 광의 전반사를 방지하여 발광소자 패키지의 발광 효율을 개선한다.In addition, the anti-reflection film is light-transmitting and functions as an anti-reflector, thereby preventing total reflection of light generated by the light emitting device, thereby improving luminous efficiency of the light emitting device package.

실시예에 따른 발광소자 패키지는, 캐비티가 형성된 몸체와, 몸체에 배치되며 서로 이격된 제1 및 제2 리드프레임과, 제1 리드프레임 상에 실장되며 캐비티 내에 위치하는 발광소자와, 캐비티에 충진되는 수지층, 및 몸체 및 수지층 상부에 위치하며 광투과성을 갖는 반사 방지막을 포함한다.The light emitting device package according to the embodiment includes a body in which a cavity is formed, first and second lead frames disposed on the body and spaced apart from each other, a light emitting device mounted on the first lead frame and positioned in the cavity, and filled in the cavity. It comprises a resin layer, and an anti-reflection film is located on the body and the resin layer and having a light transmittance.

실시예에 따른 발광소자 패키지는 수지층 상부에 반사 방지막을 형성하여 외부의습기나 공기가 리드프레임의 표면과 접촉하는 것을 방지함으로써 리드프레임이 산화되는 것이 방지되어 발광소자 패키지의 신뢰성이 개선될 수 있다. The light emitting device package according to the embodiment prevents external moisture or air from contacting the surface of the leadframe by forming an antireflection film on the resin layer, thereby preventing the leadframe from being oxidized, thereby improving reliability of the light emitting device package. have.

또한, 반사 방지막은 anti-reflector 로서 기능하여, 발광소자로부터 생성된 광이 전반사되는 것이 방지되어 발광 효율이 개선될 수 있다.In addition, the anti-reflection film functions as an anti-reflector, thereby preventing total reflection of the light generated from the light emitting device, thereby improving luminous efficiency.

도 1은 실시예에 따른 발광소자 패키지의 단면을 나타내는 단면도이다.
도 2는 실시예에 따른 발광소자 패키지의 단면을 나타내는 단면도이다.
도 3a는 실시예에 따른 발광소자 패키지를 포함하는 조명장치를 도시한 사시도이며, 도 3b는 도 3a의 조명장치의 D-D' 단면을 도시한 단면도이다.
도 4는 실시예에 따른 발광소자 패키지를 포함하는 백라이트 유닛을 도시한 분해 사시도이다.
도 5는 실시예에 따른 발광소자 패키지를 포함하는 백라이트 유닛을 도시한 분해 사시도이다.1 is a cross-sectional view showing a cross section of a light emitting device package according to an embodiment.
2 is a cross-sectional view showing a cross section of the light emitting device package according to the embodiment.
3A is a perspective view illustrating a lighting apparatus including a light emitting device package according to an embodiment, and FIG. 3B is a cross-sectional view illustrating a DD ′ cross section of the lighting apparatus of FIG. 3A.
4 is an exploded perspective view illustrating a backlight unit including a light emitting device package according to an embodiment.
5 is an exploded perspective view illustrating a backlight unit including a light emitting device package according to an embodiment.

본 발명의 이점 및 특징, 그리고 그것들을 달성하는 방법은 첨부되는 도면과 함께 상세하게 후술되어 있는 실시예들을 참조하면 명확해질 것이다. 그러나 본 발명은 이하에서 개시되는 실시예들에 한정되는 것이 아니라 서로 다른 다양한 형태로 구현될 수 있으며, 단지 본 실시예들은 본 발명의 개시가 완전하도록 하고, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 발명의 범주를 완전하게 알려주기 위해 제공되는 것이며, 본 발명은 청구항의 범주에 의해 정의될 뿐이다. 명세서 전체에 걸쳐 동일 참조 부호는 동일 구성 요소를 지칭한다.Advantages and features of the present invention and methods for achieving them will be apparent with reference to the embodiments described below in detail with the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. To fully disclose the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout.

공간적으로 상대적인 용어인 "아래(below)", "아래(beneath)", "하부(lower)", "위(above)", "상부(upper)" 등은 도면에 도시되어 있는 바와 같이 하나의 소자 또는 구성 요소들과 다른 소자 또는 구성 요소들과의 상관관계를 용이하게 기술하기 위해 사용될 수 있다. 공간적으로 상대적인 용어는 도면에 도시되어 있는 방향에 더하여 사용시 또는 동작 시 소자의 서로 다른 방향을 포함하는 용어로 이해되어야 한다. 예를 들면, 도면에 도시되어 있는 소자를 뒤집을 경우, 다른 소자의 "아래(below)"또는 "아래(beneath)"로 기술된 소자는 다른 소자의 "위(above)"에 놓여질 수 있다. 따라서, 예시적인 용어인 "아래"는 아래와 위의 방향을 모두 포함할 수 있다. 소자는 다른 방향으로도 배향될 수 있고, 이에 따라 공간적으로 상대적인 용어들은 배향에 따라 해석될 수 있다.The terms spatially relative, "below", "beneath", "lower", "above", "upper" May be used to readily describe a device or a relationship of components to other devices or components. Spatially relative terms should be understood to include, in addition to the orientation shown in the drawings, terms that include different orientations of the device during use or operation. For example, when flipping a device shown in the figure, a device described as "below" or "beneath" of another device may be placed "above" of another device. Thus, the exemplary term "below" can include both downward and upward directions. The device can also be oriented in other directions, so that spatially relative terms can be interpreted according to orientation.

본 명세서에서 사용된 용어는 실시예들을 설명하기 위한 것이며 본 발명을 제한하고자 하는 것은 아니다. 본 명세서에서, 단수형은 문구에서 특별히 언급하지 않는 한 복수형도 포함한다. 명세서에서 사용되는 "포함한다(comprises)" 및/또는 "포함하는(comprising)"은 언급된 구성요소, 단계, 동작 및/또는 소자는 하나 이상의 다른 구성요소, 단계, 동작 및/또는 소자의 존재 또는 추가를 배제하지 않는다.The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. It is noted that the terms "comprises" and / or "comprising" used in the specification are intended to be inclusive in a manner similar to the components, steps, operations, and / Or additions.

다른 정의가 없다면, 본 명세서에서 사용되는 모든 용어(기술 및 과학적 용어를 포함)는 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 공통적으로 이해될 수 있는 의미로 사용될 수 있을 것이다. 또 일반적으로 사용되는 사전에 정의되어 있는 용어들은 명백하게 특별히 정의되어 있지 않은 한 이상적으로 또는 과도하게 해석되지 않는다.Unless otherwise defined, all terms (including technical and scientific terms) used in the present specification may be used in a sense that can be commonly understood by those skilled in the art. Also, commonly used predefined terms are not ideally or excessively interpreted unless explicitly defined otherwise.

도면에서 각층의 두께나 크기는 설명의 편의 및 명확성을 위하여 과장되거나 생략되거나 또는 개략적으로 도시되었다. 또한 각 구성요소의 크기와 면적은 실제크기나 면적을 전적으로 반영하는 것은 아니다. The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size and area of each component do not entirely reflect actual size or area.

또한, 실시예에서 발광소자의 구조를 설명하는 과정에서 언급하는 각도와 방향은 도면에 기재된 것을 기준으로 한다. 명세서에서 발광소자를 이루는 구조에 대한 설명에서, 각도에 대한 기준점과 위치관계를 명확히 언급하지 않은 경우, 관련 도면을 참조하도록 한다.Further, the angle and direction mentioned in the description of the structure of the light emitting device in the embodiment are based on those shown in the drawings. In the description of the structure of the light emitting device in the specification, reference points and positional relationship with respect to angles are not explicitly referred to, refer to the related drawings.

도 1은 실시예에 따른 발광소자 패키지의 단면을 나타내는 단면도이다.1 is a cross-sectional view showing a cross section of a light emitting device package according to an embodiment.

도 1을 참조하면, 발광소자 패키지(100)는 캐비티(120)가 형성된 몸체(110), 리드프레임(120), 캐비티(120) 내에 위치하는 발광소자(130), 캐비티(120)에 충진되는 수지층(160), 수지층(160) 상부에 위치하는 반사 방지막(170)을 포함할 수 있다.Referring to FIG. 1, the light emitting device package 100 is filled in a body 110 having a cavity 120, a lead frame 120, a light emitting device 130 located in the cavity 120, and a cavity 120. The resin layer 160 and the anti-reflection film 170 positioned on the resin layer 160 may be included.

몸체(110)는 폴리프탈아미드(PPA:Polyphthalamide)와 같은 수지 재질, 실리콘(Si), 알루미늄(Al), 알루미늄 나이트라이드(AlN), 액정폴리머(PSG, photo sensitive glass), 폴리아미드9T(PA9T), 신지오택틱폴리스티렌(SPS), 금속 재질, 사파이어(Al2O3), 베릴륨 옥사이드(BeO), 인쇄회로기판(PCB, Printed Circuit Board) 중 적어도 하나로 형성될 수 있다. 몸체(110)는 사출 성형, 에칭 공정 등에 의해 형성될 수 있으나 이에 대해 한정하지는 않는다. The body 110 is made of a resin material such as polyphthalamide (PPA), silicon (Si), aluminum (Al), aluminum nitride (AlN), photosensitive glass (PSG), polyamide 9T (PA9T) ), Neo geotactic polystyrene (SPS), a metal material, sapphire (Al 2 O 3 ), beryllium oxide (BeO), may be formed of at least one of a printed circuit board (PCB, Printed Circuit Board). The body 110 may be formed by injection molding, etching, or the like, but is not limited thereto.

몸체(110)의 내면은 경사면이 형성될 수 있다. 이러한 경사면의 각도에 따라 발광소자(130)에서 방출되는 광의 반사각이 달라질 수 있으며, 이에 따라 외부로 방출되는 광의 지향각을 조절할 수 있다. The inner surface of the body 110 may be formed with an inclined surface. The angle of reflection of the light emitted from the light emitting device 130 may vary according to the angle of the inclined surface, thereby adjusting the directivity of the light emitted to the outside.

광의 지향각이 줄어들수록 발광소자(130)에서 외부로 방출되는 광의 집중성은 증가하고, 반대로 광의 지향각이 클수록 발광소자(130)에서 외부로 방출되는 광의 집중성은 감소한다.As the directivity of the light decreases, the concentration of light emitted from the light emitting device 130 to the outside increases. On the contrary, the greater the directivity of the light, the less the concentration of light emitted from the light emitting device 130 to the outside.

한편, 몸체(110)에 형성되는 캐비티(120)를 위에서 바라본 형상은 원형, 사각형, 다각형, 타원형 등의 형상일 수 있으며, 모서리가 곡선인 형상일 수도 있으나 이에 한정되는 것은 아니다.On the other hand, the shape of the cavity 120 formed on the body 110 as viewed from above may be circular, rectangular, polygonal, elliptical, or the like, and may have a curved shape, but is not limited thereto.

수지층(160)은 발광소자(130)를 덮도록 캐비티(120)에 몰딩될 수 있다.The resin layer 160 may be molded in the cavity 120 to cover the light emitting device 130.

수지층(160)은 실리콘, 에폭시, 및 기타 수지 재질로 형성될 수 있으며, 캐비티(120) 내에 소정의 수지물을 몰딩한 후, 이를 자외선 또는 열 경화하는 방식으로 형성될 수 있다.The resin layer 160 may be formed of silicon, epoxy, and other resin materials, and may be formed by molding a predetermined resin material in the cavity 120 and then UV or heat curing the resin.

또한 수지층(160)은 형광체(미도시)를 포함할 수 있으며, 형광체는 발광소자(130)에서 방출되는 광의 파장에 종류가 선택되어 발광소자 패키지(100)가 백색광을 구현하도록 할 수 있다.In addition, the resin layer 160 may include a phosphor (not shown), and the phosphor may be selected from a wavelength of light emitted from the light emitting device 130 to allow the light emitting device package 100 to realize white light.

이러한 형광체는 발광소자(130)에서 방출되는 광의 파장에 따라 청색 발광 형광체, 청록색 발광 형광체, 녹색 발광 형광체, 황녹색 발광 형광체, 황색 발광 형광체, 황적색 발광 형광체, 오렌지색 발광 형광체, 및 적색 발광 형광체중 하나가 적용될 수 있다. The phosphor is one of a blue light emitting phosphor, a blue green light emitting phosphor, a green light emitting phosphor, a yellow green light emitting phosphor, a yellow light emitting phosphor, a yellow red light emitting phosphor, an orange light emitting phosphor, and a red light emitting phosphor according to a wavelength of light emitted from the light emitting element 130. Can be applied.

즉, 형광체는 발광소자(130)에서 방출되는 제1 빛을 가지는 광에 의해 여기 되어 제2 빛을 생성할 수 있다. 예를 들어, 발광소자(130)가 청색 발광 다이오드이고 형광체가 황색 형광체인 경우, 황색 형광체는 청색 빛에 의해 여기되어 황색 빛을 방출할 수 있으며, 청색 발광 다이오드에서 발생한 청색 빛 및 청색 빛에 의해 여기 되어 발생한 황색 빛이 혼색됨에 따라 발광소자 패키지(100)는 백색 빛을 제공할 수 있다. That is, the phosphor may be excited by the light having the first light emitted from the light emitting device 130 to generate the second light. For example, when the light emitting element 130 is a blue light emitting diode and the phosphor is a yellow phosphor, the yellow phosphor may be excited by blue light to emit yellow light, and the blue light and blue light generated by the blue light emitting diode As the generated yellow light is mixed, the light emitting device package 100 may provide white light.

이와 유사하게, 발광소자(130)가 녹색 발광 다이오드인 경우는 magenta 형광체 또는 청색과 적색의 형광체를 혼용하는 경우, 발광소자(130)가 적색 발광 다이오드인 경우는 Cyan형광체 또는 청색과 녹색 형광체를 혼용하는 경우를 예로 들 수 있다.Similarly, when the light emitting device 130 is a green light emitting diode, a magenta phosphor or a mixture of blue and red phosphors is mixed. When the light emitting device 130 is a red light emitting diode, a cyan phosphor or a blue and green phosphor is mixed. For example,

이러한 형광체는 YAG계, TAG계, 황화물계, 실리케이트계, 알루미네이트계, 질화물계, 카바이드계, 니트리도실리케이트계, 붕산염계, 불화물계, 인산염계 등의 공지된 형광체일 수 있다.Such a fluorescent material may be a known fluorescent material such as a YAG, TAG, sulfide, silicate, aluminate, nitride, carbide, nitridosilicate, borate, fluoride or phosphate.

제1 및 제2 리드 프레임(140, 150)은 금속 재질, 예를 들어, 티타늄(Ti), 구리(Cu), 니켈(Ni), 금(Au), 크롬(Cr), 탄탈늄(Ta), 백금(Pt), 주석(Sn), 은(Ag), 인(P), 알루미늄(Al), 인듐(In), 팔라듐(Pd), 코발트(Co), 실리콘(Si), 게르마늄(Ge), 하프늄(Hf), 루테늄(Ru), 철(Fe) 중에서 하나 이상의 물질 또는 합금을 포함할 수 있다. 또한, 제1 및 제2 리드 프레임(140, 150)은 단층 또는 다층 구조를 가지도록 형성될 수 있으며, 이에 대해 한정하지는 않는다.The first and second lead frames 140 and 150 may be formed of a metal material, for example, titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), and tantalum (Ta). , Platinum (Pt), tin (Sn), silver (Ag), phosphorus (P), aluminum (Al), indium (In), palladium (Pd), cobalt (Co), silicon (Si), germanium (Ge) It may include one or more materials or alloys of hafnium (Hf), ruthenium (Ru), iron (Fe). In addition, the first and second lead frames 140 and 150 may be formed to have a single layer or a multilayer structure, but the embodiment is not limited thereto.

제1 및 제2 리드 프레임(140, 150)은 서로 이격되어 서로 전기적으로 분리된다. 발광소자(130)는 제1 리드 프레임(140) 상에 배치되며, 제1 리드 프레임(140)은 발광소자(130)와 직접 접촉하거나 또는 전도성을 갖는 재료(미도시)를 통해서 전기적으로 연결될 수 있다. 또한, 제2 리드 프레임(150)은 와이어(134)에 의해서 발광소자(130)에 전기적으로 연결될 수 있으며, 이에 한정하지 아니한다. 따라서 제1 및 제2 리드 프레임(140, 150)에 전원이 연결되면 발광소자(130)에 전원이 인가될 수 있다. 한편, 수개의 리드 프레임(미도시)이 몸체(110)에 배치되고 각각의 리드 프레임(미도시)이 발광소자(미도시)와 전기적으로 연결될 수 있으며, 이에 한정하지 아니한다.The first and second lead frames 140 and 150 are spaced apart from each other and electrically separated from each other. The light emitting device 130 is disposed on the first lead frame 140, and the first lead frame 140 may be in direct contact with the light emitting device 130 or electrically connected through a conductive material (not shown). have. In addition, the second lead frame 150 may be electrically connected to the light emitting device 130 by a wire 134, but is not limited thereto. Therefore, when power is connected to the first and second lead frames 140 and 150, power may be applied to the light emitting device 130. On the other hand, several lead frames (not shown) may be disposed on the body 110 and each lead frame (not shown) may be electrically connected to a light emitting device (not shown), but is not limited thereto.

발광소자(130)는 제1 및 제2 리드 프레임(140, 150)과 전기적으로 연결되며, 발광소자(130)는 일 예로 발광 다이오드일 수 있다.The light emitting device 130 is electrically connected to the first and second lead frames 140 and 150, and the light emitting device 130 may be, for example, a light emitting diode.

발광 다이오드는 예를 들어, 적색, 녹색, 청색, 백색 등의 빛을 방출하는 유색 발광 다이오드 또는 자외선을 방출하는 UV(Ultra Violet) 발광 다이오드일 수 있으나, 이에 대해 한정하지는 않는다. 또한, 발광 다이오드는 한 개 이상 배치될 수 있다.The light emitting diode may be, for example, a colored light emitting diode that emits light such as red, green, blue, or white, or a UV (Ultra Violet) light emitting diode that emits ultraviolet light. In addition, one or more light emitting diodes may be disposed.

또한, 발광 다이오드는 그 전기 단자들이 모두 상부 면에 형성된 수평형 타입(Horizontal type)이거나, 또는 상, 하부 면에 형성된 수직형 타입(Vertical type), 또는 플립 칩(flip chip) 모두에 적용 가능하다.In addition, the light emitting diode is applicable to both a horizontal type in which the electrical terminals are formed on the upper surface, or to a vertical type or flip chip formed on the upper and lower surfaces. .

다시 도 1을 참조하면, 수지층(160) 상부에는 반사 방지막(170)이 위치할 수 있다. 반사 방지막(170)은 수지층(160)의 상부 및 몸체(110)와 수지층(160) 사이의 경계를 덮도록 몸체(110)의 상부로 연장되어 위치할 수 있으며, 수지층(160) 및 몸체(110)의 상면과 접할 수 있다.Referring back to FIG. 1, an anti-reflection film 170 may be positioned on the resin layer 160. The anti-reflection film 170 may be positioned to extend over the upper portion of the body 110 to cover an upper portion of the resin layer 160 and a boundary between the body 110 and the resin layer 160, and the resin layer 160 and It may be in contact with the upper surface of the body (110).

수지층(160)과 반사 방지막(170)의 계면, 또는 반사 방지막(170)의 상면에는 광 추출 효율을 증가시키기 위한 광 추출 구조(미도시)가 형성될 수 있다. 이때, 광 추출 구조(미도시)는 예컨대 소정의 거칠기를 갖는 요철부일 수 있으며, 이에 한정하지 아니한다.A light extraction structure (not shown) may be formed at an interface between the resin layer 160 and the antireflection film 170 or on an upper surface of the antireflection film 170 to increase light extraction efficiency. In this case, the light extraction structure (not shown) may be, for example, an uneven portion having a predetermined roughness, but is not limited thereto.

아울러, 반사 방지막(170)이 제1 굴절율 n 을 갖고, 발광소자(130)에서 생성되는 광의 파장이 λ 일때, 반사 방지막(170)의 두께는 λ/4n 일 수 있다.In addition, when the antireflection film 170 has the first refractive index n and the wavelength of the light generated by the light emitting device 130 is λ, the thickness of the antireflection film 170 may be λ / 4n.

따라서, 반사 방지막(170)은 발광소자(130) 로부터 생성된 광이 수지층(160)과 외부 환경 사이의 계면에서 전반사되어 광 추출 효율이 저하되는 것을 방지하는 anti-reflector 로서 기능할 수 있다.Therefore, the anti-reflection film 170 may function as an anti-reflector for preventing the light generated from the light emitting device 130 from total reflection at the interface between the resin layer 160 and the external environment to reduce the light extraction efficiency.

또한, 반사 방지막(170)은 광투과성을 가지며 외부의 습기나 공기와 반응하지 않고, 습기 및 기체의 확산을 방지하는 특성을 가지는 무기 박막층으로 형성될 수 있으며, 예를 들어, SiOX, SiCX, AlXOY, MgFX, TiOX, HfOX, TaXOY, SiN 중 적어도 하나를 포함할 수 있다. In addition, the anti-reflection film 170 may be formed of an inorganic thin film layer that is light transmissive and does not react with external moisture or air, and has a property of preventing diffusion of moisture and gas. For example, SiO X , SiC X , Al X O Y , MgF X , TiO X , HfO X , Ta X O Y , and SiN.

반사 방지막(170)은 예컨대, 스퍼터 증착기(Sputter deposition), 전자빔 증착기(Electron beam deposition), PECVD(Plasma Enhanced Chemical Vapor Deposition) 등의 장치를 이용하여 형성될 수 있다.The anti-reflection film 170 may be formed using, for example, a device such as a sputter deposition, an electron beam deposition, or a plasma enhanced chemical vapor deposition (PECVD).

또한, 반사 방지막(170)은 수지층(160)의 상부가 산화되어 산화막 형태로 형성될 수 있다. 예를들어, 수지층(160)이 실리콘 수지로 형성될 경우, 수지층(160)이 산화한 형태인 산화규소(SiOx)로 형성될 수 있다. In addition, the anti-reflection film 170 may be formed in the form of an oxide film by oxidizing the upper portion of the resin layer 160. For example, when the resin layer 160 is formed of a silicone resin, the resin layer 160 may be formed of silicon oxide (SiOx), in which the resin layer 160 is oxidized.

반사 방지막(170)은 발광소자(130)에서 발생하는 빛이 발광소자 패키지(100) 외부로 방출될 수 있도록 투과율이 우수한 투광성 재질로 형성할 수 있으며, 발광소자 패키지(100)에서 방출되는 열에 의한 영향이 적도록 열팽창 계수가 작은 물질로 형성될 수 있다.The anti-reflection film 170 may be formed of a light transmissive material having excellent transmittance such that light generated from the light emitting device 130 may be emitted to the outside of the light emitting device package 100, and may be formed by heat emitted from the light emitting device package 100. It may be formed of a material having a small coefficient of thermal expansion so that the effect is small.

발광소자 패키지(100)는 수지층(160)의 내부로 습기 또는 공기가 침투할 수 있다. 또한, 열충격이나 외부 환경 변화에 의해서 수지층(160) 등의 재료들이 팽창 및 수축을 반복하게 되고, 이로 인해 몸체(110)와 수지층(160) 사이에 공간이 생기게 되면, 그 공간을 따라 외부의 습기 또는 공기가 침투할 수 있다. In the light emitting device package 100, moisture or air may penetrate into the resin layer 160. In addition, materials such as the resin layer 160 are repeatedly expanded and contracted due to thermal shocks or external environmental changes, and when a space is formed between the body 110 and the resin layer 160, the outside along the space Moisture or air can penetrate.

상기와 같이 외부의 습기 또는 공기가 침투하면 캐비티(120) 바닥면에 위치하는 제1 및 제2 리드 프레임(140, 150)의 표면과 접촉할 수 있다. 한편, 제1 및 제2 리드프레임(140, 150)의 표면에는 은(Ag) 도금층과 같은 금속성 반사층을 포함하기 때문에 외부의 습기 또는 공기 등이 접촉할 경우 은(Ag) 도금층이 산화될 수 있다.As described above, when external moisture or air penetrates, the surfaces of the first and second lead frames 140 and 150 positioned on the bottom surface of the cavity 120 may be in contact with each other. Meanwhile, since the surface of the first and second lead frames 140 and 150 includes a metallic reflective layer such as silver (Ag) plating layer, the silver (Ag) plating layer may be oxidized when external moisture or air is in contact. .

따라서, 수지층(160)의 상부 및 몸체(110)와 수지층(160) 사이의 경계를 덮도록 반사 방지막(170)이 위치하면 외부의 습기 또는 공기가 침투하는 것을 방지할 수 있고, 리드프레임(120)이 산화되는 것을 막아 반사율을 유지시킬 수 있다. 따라서, 발광소자 패키지(100)의 휘도가 저하되는 것을 방지 할 수 있다.Therefore, when the anti-reflection film 170 is positioned to cover the upper portion of the resin layer 160 and the boundary between the body 110 and the resin layer 160, it is possible to prevent external moisture or air from penetrating the lead frame. It is possible to prevent the oxidation of 120 to maintain the reflectance. Therefore, it is possible to prevent the luminance of the light emitting device package 100 from being lowered.

반사 방지막(170)의 표면의 형상은 플랫한 형상으로 도시하였으나, 이에 한정하지 않고 오목 렌즈 형상, 볼록 렌즈 형상 등으로 형성될 수 있으며, 반사 방지막(170)의 형태에 따라 발광소자(130)에서 방출된 광의 지향각이 변화될 수 있다.Although the shape of the surface of the anti-reflection film 170 is illustrated as a flat shape, the shape of the surface of the anti-reflection film 170 is not limited thereto, and may be formed in a concave lens shape, a convex lens shape, or the like. The direction angle of the emitted light can be changed.

또한, 반사 방지막(370)은 적어도 제1 층(371) 및 제2 층(372)을 포함할 수 있으며, 다층 구조를 가질 수 있다. .In addition, the anti-reflection film 370 may include at least a first layer 371 and a second layer 372, and may have a multilayer structure. .

제1 층(371) 및 제2 층(372)은 무기 박막층으로 형성될 수 있고, 예를 들어, 상술한 SiOX, SiCX, AlXOY, MgFX, TiOX, HfOX, TaXOY, SiN 중 적어도 하나를 포함할 수 있으며, 제1 층(371) 및 제2 층(372)의 재질은 서로 상이할 수 있다. 즉, 제1 층(371), 및 제2 층(372)은 예컨대 SiOX / SiN 또는 SiOX / MgFX, 또는 SiOX / TaXOY 중 어느 하나로 구성될 수 있으며, 이에 한정하지 아니한다. 한편, 반사 방지막(370)은 제1 층(371), 및 제2 층(372) 뿐만 아니라 수개의 층을 더 포함한 다층 구조로 형성될 수 있으며, 이에 한정하지 아니한다.The first layer 371 and the second layer 372 may be formed of an inorganic thin film layer, for example, the above-described SiO X , SiC X , Al X O Y , MgF X , TiO X , HfO X , Ta X At least one of O Y and SiN may be included, and materials of the first layer 371 and the second layer 372 may be different from each other. That is, the first layer 371, and the second layer 372 can be, for example, SiO X / SiN or SiO X / MgF X , or SiO X / Ta X O Y It may be configured as any one of, but is not limited thereto. Meanwhile, the anti-reflection film 370 may be formed in a multilayer structure including not only the first layer 371 and the second layer 372 but also several layers, but is not limited thereto.

상기와 같이 반사 방지막(370)을 굴절율이 상이한 재질을 적층하여 다층으로 형성하면, 굴절율 차이로 인한 광의 상쇄간섭으로 인하여 반사를 효과적으로 방지할 수 있어 광 추출효율이 증가할 수 있다.As described above, when the antireflection film 370 is formed by stacking materials having different refractive indices and forming a multilayer, the light extraction efficiency may be increased by effectively preventing reflection due to light interference due to the difference in refractive index.

또한, 반사 방지막(170)의 반사를 방지하는 효과를 극대화하기 위해 저굴절율의 물질과 고굴절율을 물질을 교대로 적층하여 형성할 수 있고, 수지층(160)에서 상부로 올라갈수록 굴절율이 더 작은 물질을 적층하여 형성할 수 있으며, 이에 한정하지 아니한다.In addition, in order to maximize the effect of preventing the reflection of the anti-reflection film 170, a material having a low refractive index and a high refractive index may be formed by alternately stacking the materials. The material may be formed by stacking, but is not limited thereto.

또한, 반사 방지막(170)을 다층으로 형성하면, 재질들 간의 특성이 상이하므로 상호 보완적인 역할을 하여 내구성이 좋아지며, 효과적으로 외부의 습기나 공기의 침투를 방지할 수 있다. In addition, when the anti-reflection film 170 is formed in a multi-layer, since the properties of the materials are different from each other to play a complementary role to improve the durability, it can effectively prevent the penetration of moisture or air outside.

예를 들어, AlXOY 는 내화성, 내마모성이 뛰어나 반사 방지막(350)의 최상위층인 제2 층(352)으로 구성할 수 있으며, SiOX,는 내부식성, 내열성이 좋으므로 수지층 (360)과 접하고 있는 제1 층(371)으로 구성할 수 있다.For example, Al X O Y may be composed of the second layer 352, which is excellent in fire resistance and abrasion resistance, and is the top layer of the antireflection film 350. Since SiO X , has good corrosion resistance and heat resistance, the resin layer 360 It can comprise with the 1st layer 371 which is in contact with.

또한 도시하지는 않았지만, 반사 방지막(370)의 층 간에 광추출효율이 증가할 수 있도록 광추출구조를 포함할 수 있으며, 제2 층(372)의 표면형상을 오목 렌즈 형상, 볼록 렌즈 형상 등으로 형성하여 발광소자(330)에서 방출된 광의 지향각이 변화될 수 있다.Although not shown, a light extraction structure may be included to increase light extraction efficiency between the layers of the anti-reflection film 370. The surface shape of the second layer 372 may be formed into a concave lens shape or a convex lens shape. Thus, the directivity angle of the light emitted from the light emitting element 330 may be changed.

도 2는 실시예에 따른 발광소자 패키지의 단면을 나타내는 단면도이다.2 is a cross-sectional view showing a cross section of the light emitting device package according to the embodiment.

도 2를 참조하면, 반사 방지막(270)이 몸체(210)의 측면으로 연장되어 형성될 수 있다. 반사 방지막(270)이 몸체(210)의 측면으로 연장되어 형성되면, 외부의 습기나 공기의 침투를 효과적으로 방지할 수 있다.2, the anti-reflection film 270 may be formed to extend to the side of the body 210. If the anti-reflection film 270 is formed to extend to the side of the body 210, it can effectively prevent the penetration of moisture or air outside.

반사 방지막(270)을 몸체(210)의 측면까지 연장하여 형성함으로써, 몸체(210)와 반사 방지막(270) 사이의 틈을 따라 외부의 습기나 공기가 침투하는 경우, 침투경로가 연장되어 외부의 습기나 이물질 등이 침투하기 어려워져 발광소자 패키지(200)의 신뢰성이 향상될 수 있다. By forming the anti-reflection film 270 extending to the side of the body 210, when the external moisture or air penetrates along the gap between the body 210 and the anti-reflection film 270, the penetration path is extended to the outside Moisture or foreign matter, such as difficult to penetrate the reliability of the light emitting device package 200 can be improved.

또한, 반사 방지막(270)과 몸체(210)가 보다 넓은 면적에 걸쳐 접촉함으로써 반사 방지막(270)이 몸체(210)에 신뢰성있게 고정될 수 있다. In addition, the anti-reflection film 270 and the body 210 are in contact with each other over a larger area, the anti-reflection film 270 can be reliably fixed to the body 210.

이 때, 측면으로 연장된 반사 방지막(273)은 제1 층(271) 또는 제2 층(272)과 동일한 재질로 이루어질 수 있다.In this case, the anti-reflection film 273 extending laterally may be made of the same material as the first layer 271 or the second layer 272.

또한, 도시하지는 않았지만, 반사 방지막(270)이 제1 및 제2 리드프레임(240, 250)의 측면까지 연장되어 형성될 수 있다. 제1 및 제2 리드프레임(240, 250)의 측면까지 연장되어 형성되면, 몸체(210)와 제1 및 제2 리드프레임(240, 250) 사이의 틈을 따라 외부의 습기나 공기가 침투하는 것을 방지 할 수 있다.In addition, although not shown, the anti-reflection film 270 may be formed to extend to side surfaces of the first and second lead frames 240 and 250. When formed to extend to the sides of the first and second lead frame (240, 250), the outside moisture or air penetrates along the gap between the body 210 and the first and second lead frame (240, 250) Can be prevented.

따라서, 제1 및 제2 리드프레임(240, 250)이 외부의 습기나 공기에 의해 산화되는 것을 효과적으로 방지하여 발광소자 패키지(200)의 휘도를 유지할 수 있고 신뢰성이 향상될 수 있다.Therefore, the first and second lead frames 240 and 250 may be effectively prevented from being oxidized by external moisture or air, thereby maintaining the brightness of the light emitting device package 200 and improving reliability.

도 3a는 실시예에 따른 발광소자 패키지를 포함하는 조명장치를 도시한 사시도이며, 도 3b는 도 3a의 조명장치의 D-D' 단면을 도시한 단면도이다. 3A is a perspective view illustrating a lighting apparatus including a light emitting device package according to an embodiment, and FIG. 3B is a cross-sectional view illustrating a cross-sectional view taken along line D-D 'of the lighting apparatus of FIG. 3A.

이하에서는, 실시 예에 따른 조명장치(300)의 형상을 보다 상세히 설명하기 위해, 조명장치(300)의 길이방향(Z)과, 길이방향(Z)과 수직인 수평방향(Y), 그리고 길이방향(Z) 및 수평방향(Y)과 수직인 높이방향(X)으로 설명하기로 한다.Hereinafter, in order to describe the shape of the lighting apparatus 300 according to the embodiment in more detail, the longitudinal direction (Z) of the lighting apparatus 300, the horizontal direction (Y) perpendicular to the longitudinal direction (Z), and the length The height direction X perpendicular to the direction Z and the horizontal direction Y will be described.

즉, 도 3b는 도 3a의 조명장치(300)를 길이방향(Z)과 높이방향(X)의 면으로 자르고, 수평방향(Y)으로 바라본 단면도이다.That is, FIG. 3B is a cross-sectional view of the lighting device 300 of FIG. 3A cut in the plane of the longitudinal direction Z and the height direction X, and viewed in the horizontal direction Y. FIG.

도 3a 및 도 3b를 참조하면, 조명장치(300)는 몸체(310), 몸체(310)와 체결되는 커버(330) 및 몸체(310)의 양단에 위치하는 마감캡(350)을 포함할 수 있다.3A and 3B, the lighting device 300 may include a body 310, a cover 330 fastened to the body 310, and a closing cap 350 positioned at both ends of the body 310. have.

몸체(310)의 하부면에는 발광소자모듈(340)이 체결되며, 몸체(310)는 발광소자 패키지(344)에서 발생된 열이 몸체(310)의 상부면을 통해 외부로 방출할 수 있도록 전도성 및 열발산 효과가 우수한 금속재질로 형성될 수 있다.The light emitting device module 340 is fastened to the lower surface of the body 310, and the body 310 is conductive so that heat generated from the light emitting device package 344 can be discharged to the outside through the upper surface of the body 310. And it may be formed of a metal material having an excellent heat dissipation effect.

발광소자 패키지(344)는 PCB(342) 상에 다색, 다열로 실장되어 어레이를 이룰 수 있으며, 동일한 간격으로 실장되거나 또는 필요에 따라 다양한 이격 거리를 가지고 실장될 수 있어 밝기 등을 조절할 수 있다. 이러한 PCB (342)로는 MCPCB(Metal Core PCB) 또는 FR4 재질의 PCB 등을 사용할 수 있다. The light emitting device package 344 may be mounted on the PCB 342 in a multi-colored, multi-row array to form an array. The light emitting device package 344 may be mounted at the same interval or may be mounted with various separation distances as necessary to adjust brightness. The PCB 342 may be a metal core PCB (MCPCB) or a PCB made of FR4.

금속 등의 전도성 물질로 형성된 필름은 광의 간섭현상을 많이 일으키기 때문에, 광파의 상호 작용에 의해 광파의 강도가 강해질 수 있어 광을 효과적으로 추출 및 확산시킬 수 있으며, 필름에 형성된 다수의 홀은 광원부에서 발생한 광의 간섭과 회절을 통해 효과적으로 광을 추출할 수 있도록 할 수 있다. 따라서, 조명장치(300)의 효율이 향상될 수 있다. 이때, 필름에 형성되는 다수의 홀의 크기는 광원부에서 발생하는 광의 파장보다 작은 것이 바람직하다. Since a film formed of a conductive material such as a metal causes a lot of interference of light, the intensity of the light wave may be strengthened by the interaction of the light wave, thereby effectively extracting and diffusing the light. The interference and diffraction of the light can effectively extract the light. Therefore, the efficiency of the lighting device 300 can be improved. At this time, the size of the plurality of holes formed in the film is preferably smaller than the wavelength of the light generated from the light source.

커버(330)는 몸체(310)의 하부면을 감싸도록 원형의 형태로 형성될 수 있으나, 이에 한정되지 않는다.The cover 330 may be formed in a circular shape to surround the lower surface of the body 310, but is not limited thereto.

커버(330)는 내부의 발광소자모듈(340)을 외부의 이물질 등으로부터 보호한다. 또한, 커버(330)는 발광소자 패키지(344)에서 발생한 광의 눈부심을 방지하고, 외부로 광을 균일하게 방출할 수 있도록 확산입자를 포함할 수 있으며, 또한 커버(330)의 내면 및 외면 중 적어도 어느 한 면에는 프리즘 패턴 등이 형성될 수 있다. 또한 커버(330)의 내면 및 외면 중 적어도 어느 한 면에는 형광체가 도포될 수도 있다. The cover 330 protects the light emitting device module 340 from the outside and the like. In addition, the cover 330 may include diffusing particles to prevent the glare of the light generated from the light emitting device package 344 and to uniformly emit light to the outside, and may also include at least one of an inner surface and an outer surface of the cover 330. A prism pattern or the like may be formed on either side. In addition, a phosphor may be applied to at least one of an inner surface and an outer surface of the cover 330.

한편, 발광소자 패키지(344)에서 발생한 광은 커버(330)를 통해 외부로 방출되므로 커버(330)는 광투과율이 우수하여야하며, 발광소자 패키지(344)에서 발생한 열에 견딜 수 있도록 충분한 내열성을 구비하고 있어야 하는바, 커버(330)는 폴리에틸렌 테레프탈레이트(Polyethylen Terephthalate; PET), 폴리카보네이트(Polycarbonate; PC) 또는 폴리메틸 메타크릴레이트(Polymethyl Methacrylate; PMMA) 등을 포함하는 재질로 형성되는 것이 바람직하다.On the other hand, since the light generated from the light emitting device package 344 is emitted to the outside through the cover 330, the cover 330 should have excellent light transmittance, and has sufficient heat resistance to withstand the heat generated from the light emitting device package 344. The cover 330 is preferably formed of a material including polyethylene terephthalate (PET), polycarbonate (PC), polymethyl methacrylate (PMMA), or the like. .

마감캡(350)은 몸체(310)의 양단에 위치하며 전원장치(미도시)를 밀폐하는 용도로 사용될 수 있다. 또한 마감캡(350)에는 전원핀(352)이 형성되어 있어, 실시예에 따른 조명장치(300)는 기존의 형광등을 제거한 단자에 별도의 장치 없이 곧바로 사용할 수 있게 된다.Closing cap 350 is located at both ends of the body 310 may be used for sealing the power supply (not shown). In addition, the closing cap 350 is formed with a power pin 352, the lighting device 300 according to the embodiment can be used immediately without a separate device to the terminal from which the existing fluorescent lamps are removed.

도 4는 실시예에 따른 발광소자 패키지를 포함하는 백라이트 유닛을 도시한 분해 사시도이다.4 is an exploded perspective view illustrating a backlight unit including a light emitting device package according to an embodiment.

도 4는 에지-라이트 방식으로, 액정 표시 장치(400)는 액정표시패널(410)과 액정표시패널(410)로 빛을 제공하기 위한 백라이트 유닛(470)을 포함할 수 있다.4 illustrates an edge-light method, and the liquid crystal display device 400 may include a liquid crystal display panel 410 and a backlight unit 470 for providing light to the liquid crystal display panel 410.

액정표시패널(410)은 백라이트 유닛(470)으로부터 제공되는 광을 이용하여 화상을 표시할 수 있다. 액정표시패널(410)은 액정을 사이에 두고 서로 대향하는 컬러 필터 기판(412) 및 박막 트랜지스터 기판(414)을 포함할 수 있다.The liquid crystal display panel 410 may display an image using light provided from the backlight unit 470. The liquid crystal display panel 410 may include a color filter substrate 412 and a thin film transistor substrate 414 facing each other with the liquid crystal interposed therebetween.

컬러 필터 기판(412)은 액정표시패널(410)을 통해 디스플레이되는 화상의 색을 구현할 수 있다.The color filter substrate 412 may implement a color of an image displayed through the liquid crystal display panel 410.

박막 트랜지스터 기판(414)은 구동 필름(417)을 통해 다수의 회로부품이 실장되는 인쇄회로기판(418)과 전기적으로 접속되어 있다. 박막 트랜지스터 기판(414)은 인쇄회로기판(418)으로부터 제공되는 구동 신호에 응답하여 인쇄회로기판(418)으로부터 제공되는 구동 전압을 액정에 인가할 수 있다.The thin film transistor substrate 414 is electrically connected to the printed circuit board 418 on which a plurality of circuit components are mounted through the driving film 417. The thin film transistor substrate 414 may apply a driving voltage provided from the printed circuit board 418 to the liquid crystal in response to a driving signal provided from the printed circuit board 418.

박막 트랜지스터 기판(414)은 유리나 플라스틱 등과 같은 투명한 재질의 다른 기판상에 박막으로 형성된 박막 트랜지스터 및 화소 전극을 포함할 수 있다. The thin film transistor substrate 414 may include a thin film transistor and a pixel electrode formed of a thin film on another substrate of a transparent material such as glass or plastic.

백라이트 유닛(470)은 빛을 출력하는 발광소자모듈(420), 발광소자모듈(420)로부터 제공되는 빛을 면광원 형태로 변경시켜 액정표시패널(410)로 제공하는 도광판(430), 도광판(430)으로부터 제공된 빛의 휘도 분포를 균일하게 하고 수직 입사성을 향상시키는 다수의 필름(450, 460, 464) 및 도광판(430)의 후방으로 방출되는 빛을 도광판(430)으로 반사시키는 반사 시트(440)로 구성된다.The backlight unit 470 may convert the light provided from the light emitting device module 420, the light emitting device module 420 into a surface light source, and provide the light guide plate 430 to the liquid crystal display panel 410. Reflective sheet for reflecting the light emitted from the rear of the light guide plate 430 and the plurality of films 450, 460, 464 to uniform the luminance distribution of the light provided from the 430 and improve the vertical incidence ( 440).

발광소자모듈(420)은 복수의 발광소자 패키지(424)와 복수의 발광소자 패키지(424)가 실장되어 어레이를 이룰 수 있도록 PCB기판(422)을 포함할 수 있다.The light emitting device module 420 may include a PCB substrate 422 such that a plurality of light emitting device packages 424 and a plurality of light emitting device packages 424 may be mounted to form an array.

한편, 백라이트유닛(470)은 도광판(430)으로부터 입사되는 빛을 액정 표시 패널(410) 방향으로 확산시키는 확산필름(460)과, 확산된 빛을 집광하여 수직 입사성을 향상시키는 프리즘필름(450)으로 구성될 수 있으며, 프리즘필름(450)를 보호하기 위한 보호필름(464)을 포함할 수 있다.On the other hand, the backlight unit 470 is a diffusion film 460 for diffusing light incident from the light guide plate 430 toward the liquid crystal display panel 410, and a prism film 450 for condensing the diffused light to improve vertical incidence. It may be configured as), and may include a protective film 464 for protecting the prism film 450.

도 5는 실시예에 따른 발광소자 패키지를 포함하는 백라이트 유닛을 도시한 분해 사시도이다.5 is an exploded perspective view illustrating a backlight unit including a light emitting device package according to an embodiment.

다만, 도 4에서 도시하고 설명한 부분에 대해서는 반복하여 상세히 설명하지 않는다.However, the parts shown and described in FIG. 4 will not be repeatedly described in detail.

도 5는 직하 방식으로, 액정 표시 장치(500)는 액정표시패널(510)과 액정표시패널(510)로 빛을 제공하기 위한 백라이트 유닛(570)을 포함할 수 있다.5 is a direct view, the liquid crystal display device 500 may include a liquid crystal display panel 510 and a backlight unit 570 for providing light to the liquid crystal display panel 510.

액정표시패널(510)은 도 4에서 설명한 바와 동일하므로, 상세한 설명은 생략한다.Since the liquid crystal display panel 510 is the same as that described with reference to FIG. 4, detailed description thereof will be omitted.

백라이트 유닛(570)은 복수의 발광소자모듈(523), 반사시트(524), 발광소자모듈(523)과 반사시트(524)가 수납되는 하부 섀시(530), 발광소자모듈(523)의 상부에 배치되는 확산판(540) 및 다수의 광학필름(560)을 포함할 수 있다.The backlight unit 570 includes a plurality of light emitting device modules 523, a reflective sheet 524, a lower chassis 530 in which the light emitting device modules 523 and the reflective sheet 524 are accommodated, and an upper portion of the light emitting device module 523. It may include a diffusion plate 540 and a plurality of optical film 560 disposed in the.

발광소자모듈(523) 복수의 발광소자 패키지(522)가 실장되어 어레이를 이룰 수 있도록 PCB기판(521)을 포함할 수 있다.LED Module 523 A plurality of LED package 522 may be mounted to include a PCB substrate 521 to form an array.

반사 시트(524)는 발광소자 패키지(522)에서 발생한 빛을 액정표시패널(510)이 위치한 방향으로 반사시켜 빛의 이용 효율을 향상시킨다.The reflective sheet 524 reflects the light generated from the light emitting device package 522 in the direction in which the liquid crystal display panel 510 is positioned to improve light utilization efficiency.

한편, 발광소자모듈(523)에서 발생한 빛은 확산판(540)에 입사하며, 확산판(540)의 상부에는 광학 필름(560)이 배치된다. 광학 필름(560)은 확산 필름(566), 프리즘필름(550) 및 보호필름(564)를 포함하여 구성된다.Meanwhile, the light generated by the light emitting device module 523 is incident on the diffusion plate 540, and the optical film 560 is disposed on the diffusion plate 540. The optical film 560 includes a diffusion film 566, a prism film 550, and a protective film 564.

이상에서는 본 발명의 바람직한 실시예에 대하여 도시하고 설명하였지만, 본 발명은 상술한 특정의 실시예에 한정되지 아니하며, 특허청구범위에서 청구하는 본 발명의 요지를 벗어남이 없이 당해 발명이 속하는 기술분야에서 통상의 지식을 가진 자에 의해 다양한 변형실시가 가능한 것은 물론이고, 이러한 변형실시들은 본 발명의 기술적 사상이나 전망으로부터 개별적으로 이해되어서는 안될 것이다.Although the above has been illustrated and described with respect to preferred embodiments of the present invention, the present invention is not limited to the specific embodiments described above, but in the art to which the invention pertains without departing from the spirit of the invention as claimed in the claims. Various modifications can be made by those skilled in the art, and these modifications should not be individually understood from the technical spirit or the prospect of the present invention.

110: 몸체 120 : 캐비티
130 : 발광소자 140 : 제1 리드 프레임
150 : 제2 리드 프레임 160 : 수지층
170: 반사 방지막110: body 120: cavity
130: light emitting element 140: first lead frame
150: second lead frame 160: resin layer
170: antireflection film

Claims (8)

캐비티가 형성된 몸체;
상기 몸체에 배치되며 서로 이격된 제1 및 제2 리드프레임;
상기 제1 리드프레임 상에 실장되며 상기 캐비티 내에 위치하는 발광소자;
상기 캐비티에 충진되는 수지층; 및
상기 몸체 및 상기 수지층 상부에 위치하며 광투과성을 갖는 반사 방지막을 포함하는 발광소자 패키지.A body formed with a cavity;
First and second lead frames disposed on the body and spaced apart from each other;
A light emitting device mounted on the first lead frame and positioned in the cavity;
A resin layer filled in the cavity; And
The light emitting device package comprising an anti-reflection film having a light transmissive position on the body and the resin layer. 제1항에 있어서,
상기 반사 방지막은,
상기 몸체의 상면 및 상기 수지층의 상면에 접하는 발광소자 패키지.The method of claim 1,
The anti-reflection film,
Light emitting device package in contact with the upper surface of the body and the upper surface of the resin layer. 제1항에 있어서,
상기 반사 방지막은,
무기 박막층인 발광소자 패키지.The method of claim 1,
The anti-reflection film,
Light emitting device package that is an inorganic thin film layer. 제1항에 있어서,
상기 반사 방지막은,
SiOX, SiCX, AlXOY, MgFX, TiOX, HfOX, TaXOY, SiN 중 적어도 하나를 포함하는 발광소자 패키지.The method of claim 1,
The anti-reflection film,
A light emitting device package comprising at least one of SiO X , SiC X , Al X O Y , MgF X , TiO X , HfO X , Ta X O Y , SiN. 제1항에 있어서,
상기 반사 방지막은 굴절율 n 을 갖고,
상기 발광소자에서 생성되는 광의 파장은 λ 이며,
상기 반사 방지막의 두께는 λ/4n 의 두께를 갖는 발광소자 패키지.The method of claim 1,
The antireflection film has a refractive index n,
The wavelength of the light generated by the light emitting device is λ,
The thickness of the anti-reflection film is a light emitting device package having a thickness of λ / 4n. 제1항에 있어서,
상기 반사 방지막은 상기 몸체의 상면에서 상기 몸체의 측면 일부로 연장되어 위치하는 발광소자 패키지.The method of claim 1,
The anti-reflection film is a light emitting device package which extends from the upper surface of the body to a portion of the side of the body. 제1항에 있어서,
상기 반사 방지막은 적어도 제1 층 및 제2 층을 포함하고,
상기 제1 층 및 상기 제2 층은 상이한 재질을 포함하는 발광소자 패키지.The method of claim 1,
The anti-reflection film includes at least a first layer and a second layer,
The first layer and the second layer is a light emitting device package comprising a different material. 제7항에 있어서,
상기 제1 층 및 제2 층은,
SiO2,, Al2O3, MgF2, TiO2, HfO2, Ta2O5, SiN 중 적어도 하나를 포함하는 발광소자 패키지.The method of claim 7, wherein
The first layer and the second layer,
A light emitting device package comprising at least one of SiO 2 , Al 2 O 3 , MgF 2 , TiO 2 , HfO 2 , Ta 2 O 5 , SiN.
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