KR20130019854A - Light emitting apparatus - Google Patents

Light emitting apparatus Download PDF

Info

Publication number
KR20130019854A
KR20130019854A KR1020110082108A KR20110082108A KR20130019854A KR 20130019854 A KR20130019854 A KR 20130019854A KR 1020110082108 A KR1020110082108 A KR 1020110082108A KR 20110082108 A KR20110082108 A KR 20110082108A KR 20130019854 A KR20130019854 A KR 20130019854A
Authority
KR
South Korea
Prior art keywords
heat dissipation
light emitting
emitting device
frame
layer
Prior art date
Application number
KR1020110082108A
Other languages
Korean (ko)
Other versions
KR101840031B1 (en
Inventor
성진석
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020110082108A priority Critical patent/KR101840031B1/en
Publication of KR20130019854A publication Critical patent/KR20130019854A/en
Application granted granted Critical
Publication of KR101840031B1 publication Critical patent/KR101840031B1/en

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Abstract

PURPOSE: A light emitting device is provided to improve the efficiency of heat radiation by arranging a non-polar radiating part at a first and a second lateral part. CONSTITUTION: A light emitting device package is mounted on a substrate. A heat dissipating plate(205) touches the light emitting device package. A first lead frame and a second lead frame are arranged in a cavity. A heat radiation frame(21) is arranged between the first lead frame and the second lead frame. A light emitting chip(101) is arranged on the heat radiation frame.

Description

[0001] LIGHT EMITTING APPARATUS [0002]

An embodiment relates to a light emitting device.

A light emitting device, such as a light emitting device, is a kind of semiconductor device that converts electrical energy into light, and has been spotlighted as a next-generation light source by replacing a conventional fluorescent lamp and an incandescent lamp.

Since the light emitting diode generates light by using a semiconductor element, the light emitting diode consumes very low power as compared with an incandescent lamp that generates light by heating tungsten, or a fluorescent lamp that generates ultraviolet light by impinging ultraviolet rays generated through high-pressure discharge on a phosphor .

In addition, since the light emitting diode generates light using the potential gap of the semiconductor device, it has a longer lifetime, faster response characteristics, and an environment-friendly characteristic as compared with the conventional light source.

Accordingly, much research has been conducted to replace an existing light source with a light emitting diode, and a light emitting diode is increasingly used as a light source for various lamps used for indoor and outdoor use, lighting devices such as a liquid crystal display, an electric signboard, and a streetlight.

On the other hand, when manufacturing a light emitting device using such a light emitting diode as a light source, due to a lot of heat generated from the light emitting diode, there is a problem such as low reliability and short life of the light emitting device.

Accordingly, recently, a light emitting device having a heat dissipation device capable of efficiently dissipating heat generated from a light emitting diode has been studied.

The embodiment provides a light emitting device package having a new structure.

The embodiment provides a light emitting device package capable of maximizing heat dissipation efficiency by disposing a non-polar heat dissipating portion on a second side portion opposite to the first side portion on which the body is mounted.

The embodiment provides a light emitting device package in which a non-polar heat dissipation unit is disposed on a second side portion opposite to the first side portion on which the body is to be mounted and a fifth side portion opposite to the light exit surface to maximize heat dissipation efficiency.

The embodiment provides a light emitting device capable of dissipating heat by contacting a heat dissipation plate on a non-polar heat dissipation portion disposed on an upper surface of a light emitting device package.

The light emitting device according to the embodiment, the substrate; At least one light emitting device package mounted on the substrate; And a heat dissipation plate in contact with the light emitting device package.

The light emitting device package,

A body having a cavity; A first lead frame and a second lead frame disposed in the cavity of the body; A heat dissipation frame disposed between the first lead frame and the second lead frame disposed in the cavity; At least one light emitting chip on the heat dissipation frame; And a first lead portion and a second lead portion disposed on the first side portion of the body, wherein the heat dissipation frame is bent from the heat dissipation frame on the second side portion opposite to the first side portion of the body and disposed on the heat dissipation plate. It includes a first heat radiation portion in contact with.

The embodiment can improve the heat radiation efficiency of the light emitting device package.

The embodiment can improve heat dissipation efficiency in the side view type light emitting device package.

The embodiment can improve the reliability of the light emitting device package and the light emitting device having the same.

1 is a view showing a light emitting device package according to an embodiment.
FIG. 2 is a cross-sectional view taken along the AA side of the light emitting device package of FIG. 1.
3 is a cross-sectional view taken along the BB side of the light emitting device package of FIG. 1.
4 is a view seen from the first side of the light emitting device package of FIG.
FIG. 5 is a view seen from the second side portion of the light emitting device package of FIG. 1.
FIG. 6 is a view seen from the third side portion of the light emitting device package of FIG. 1.
FIG. 7 is a view of the fourth side of the light emitting device package of FIG. 1.
8 is a view illustrating another example of a heat radiation frame of the light emitting device package of FIG. 1.
9 is a view illustrating still another example of a heat radiation frame of the light emitting device package of FIG. 1.
FIG. 10 is a front view of a light emitting module having the light emitting device package of FIG. 1.
FIG. 11 is a side cross-sectional view of the light emitting module of FIG. 10.
12 is a view illustrating a light emitting chip of the light emitting device package of FIG. 1.
13 is a diagram illustrating a display device having a light emitting device package according to an exemplary embodiment.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure is formed "on" or "under" a substrate, each layer The terms " on "and " under " encompass both being formed" directly "or" indirectly " In addition, the criteria for above or below each layer will be described with reference to the drawings.

In the drawings, sizes are exaggerated, omitted, or schematically illustrated for convenience and clarity of description. Also, the size of each component does not entirely reflect the actual size. Like reference numerals denote like elements throughout the description of the drawings.

Hereinafter, a light emitting device package according to an embodiment will be described with reference to the accompanying drawings.

1 is a view showing a light emitting device package according to an embodiment, FIG. 2 is a sectional view taken along the AA side of the light emitting device package of FIG. 1, FIG. 3 is a sectional view taken along the BB side of the light emitting device package of FIG. 5 is a view seen from the first side portion of the light emitting device package of FIG. 5 is a view seen from the second side portion of the light emitting device package of FIG. 1, and FIG. 6 is a view seen from the third side portion of the light emitting device package of FIG. 7 is a view seen from the fourth side of the light emitting device package of FIG.

1 to 7, the light emitting device package 100 may be implemented as a side light emitting package, and may be variously applied as a light source such as a light source and an illumination field of a liquid crystal display device such as a mobile phone and a portable computer. have.

The light emitting device package 100 includes a body 11 having a cavity 15, first and second lead frames 31 and 41 in the cavity 15, and first and second lead frames 31 and 41. ) Between the heat dissipation frame 21, the light emitting chip 101, the first and second lead frames 31 and 41 on the heat dissipation frame 21, and the first side portion S1 of the body 11. The first heat dissipation portion (33) and the second lead portion (43) disposed on the first heat dissipation portion (b) bent from the heat dissipation frame (21) and disposed on the second side portion (S2) of the body (11) 23).

The body 11 includes a printed circuit board (PCB), silicon, silicon carbide (SiC), aluminum nitride (AlN), poly phthalamide (PPA), and polymer liquid crystal (Liquid). Crystal Polymer) may be formed in at least one, and the like, but is not limited thereto. In addition, the body 11 may be formed by injection molding a material such as polyphthalamide (PPA) into an injection structure, using an etching method, or may be manufactured as a printed circuit board, but is not limited thereto.

2, 4 and 5, the body 11 includes a reflector 12 and a support 13, and the reflector 12 includes a cavity 15 having an open upper portion. The support part 13 is formed integrally with the reflecting part 12 under the reflecting part 12. The first lead frame 31, the heat dissipation frame 21, and the second lead frame 41 disposed on the bottom of the cavity 15 are disposed between the reflective part 12 and the support part 13.

An open cavity 15 is formed in the front portion S0 of the body 11, and the cavity 15 may be formed at a predetermined depth and a predetermined shape, and an upper side thereof may be a light emission area. 2 and 3, the circumference of the cavity 15 may be inclined or perpendicular to the bottom of the cavity 15, but is not limited thereto.

The first side surface portion S1 of the body 11 is a surface orthogonal to the surface on which the cavity 15 is formed, and is a region to be mounted on the substrate, and the second side surface portion S2 is an area opposite to the first side surface portion S1. As a result, it becomes a heat dissipation area. The third side portion S3 and the fourth side portion S4 are side portions disposed in the longitudinal direction of the cavity 15 and disposed on opposite sides thereof. The cavity 15 has a length longer than the length of the region disposed between the third side portion S3 and the fourth side portion S4, the length of the region disposed between the second side portion S2 and the second side portion S1. It may be formed, but not limited thereto.

The heat dissipation frame 21 is disposed between the first and second lead frames 31 and 41 at the center of the bottom of the cavity 15, and the first and second lead frames 31 and 41 are formed in the cavity ( 15) are placed on both sides of the floor.

The first and second lead frames 31 and 41 and the heat dissipation frame 21 are made of a metal material, for example, titanium (Ti), copper (Cu), nickel (Ni), gold (Au), and chromium (Cr). ), Tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), phosphorus (P) may include at least one, and may be formed of a single metal layer or a multilayer metal layer.

The first lead frame 31 is disposed to be spaced apart from the heat dissipation frame 21 at one side of the cavity 15, and the second lead frame 41 is disposed at the other side of the cavity 15. 21) and spaced apart.

The first lead frame 31 includes a first lead part 33 as shown in FIGS. 2, 4 and 6, and the first lead part 33 is the body from the first lead frame 31. It penetrates through 11 and is bent to the 1st area | region S11 of the 1st side surface part S1 of the said body 11, and is arrange | positioned substantially parallel to the 1st side surface part S1 of the said body 11. The first lead part 33 may be in close contact with one side of the support part 13 of the body 11.

The second lead frame 41 includes a second lead portion 43 as shown in FIGS. 2, 4, and 7, and the second lead portion 43 is formed from the body of the second lead frame 41. It penetrates through 11 and is bent to the 2nd area | region S12 of the 1st side surface part S1 of the said body 11, and is arrange | positioned substantially parallel to the 1st side surface part S1 of the said body 11. The second lead part 43 may be in close contact with one side of the support part 13 of the body 11.

As shown in FIG. 2, the length of the heat dissipation frame 21 disposed on the bottom of the cavity 15 may be shorter than the length of the bottom of the cavity 15. The bottom surface of the heat dissipation frame 21 disposed on the bottom of the cavity 15 may be spaced apart from the fifth side surface portion S5 of the body 11. Here, the fifth side surface portion S5 is an opposite side surface of the light emission area of the body 11.

The heat dissipation frame 21 includes a first heat dissipation part 23 and penetrates through the first side surface part S2 of the body 11 at the bottom of the cavity 15. 3 and 5, the first heat dissipation part 23 is bent from the heat dissipation frame 21 to the second side part S2 of the body 11, so that the first heat dissipation part 23 is formed on the second side part S2. It is arrange | positioned substantially in parallel with 2nd side surface part S2.

The first heat dissipation part 23 of the heat dissipation frame 21 is in close contact with the support part 13 which is the second side surface part S2 of the body 11 and is formed to have an area substantially equal to the area of the support part 13. Can be.

The width T3 of the first heat dissipation part 23 of the heat dissipation frame 21 may be formed to be equal to or less than the thickness T1 of the body 11, for example, or the width of the support part 13. The length L1 of the first heat dissipation part 23 may be formed to be the length of the body 11 or less. The thickness of the support 13 may be formed thicker or thinner than the thickness T2 of the reflector 12 of the body 11, but is not limited thereto.

The first heat dissipation part 23 of the heat dissipation frame 21 is disposed to face the first lead part 33 and the second lead part 43. The heat dissipation frame 21 includes a first heat dissipation part 23 bent by the second side surface part S2 of the body 11, thereby generating a light emitting chip 101 disposed on the heat dissipation frame 21. It can dissipate heat effectively. The heat dissipation frame 21 is a terminal having a non-polarity, and since the heat dissipation frame 21 is not a power path, heat dissipation may be more effectively performed.

In addition, as shown in FIG. 3, the first heat dissipation part 23 of the heat dissipation frame 21 may be disposed below the bottom of the cavity 15 and disposed on the same plane as the second side surface part S2. have.

As shown in FIG. 5, at least one hole 16 is formed in the heat dissipation frame 21, and a part 16 of the body 11 is disposed in the hole 16. Accordingly, the adhesive force between the heat dissipation frame 21 and the body 11 may be improved.

The light emitting chip 101 may be disposed on the heat dissipation frame 21 and may be connected to the first lead frame 31 and the second lead frame 41 by a wire 105. The light emitting chip 101 may be driven by power supplied from the first lead frame 31 and the second lead frame 41, and may be effectively radiated by the heat radiating frame 21.

The light emitting chip 101 may selectively emit light in a range of visible light to ultraviolet light, for example, a colored LED chip such as a red LED chip, a blue LED chip, a green LED chip, a yellow green LED chip, or the like. It may optionally include. In addition, one or a plurality of light emitting chips 101 may be disposed in the cavity 15, and the light emitting chips 101 are connected to each other by wires 105, but the lead frames 31 and 41 may be connected to each other. Can be connected with wires respectively. The light emitting chip 101 may include a compound semiconductor layer of Group II to Group VI elements, for example, a Group III-V compound semiconductor layer.

2 and 3, a molding member 61 is disposed in the cavity 15 of the body 11, and the molding member 61 includes a light transmissive resin layer such as silicon or epoxy, and is formed in a single layer or a multilayer. It can be formed as. The molding member 61 or the light emitting chip 101 may include a phosphor for changing the wavelength of the light emitted, and the phosphor excites a part of the light emitted from the light emitting chip 101 to Will emit light. The phosphor may be selectively formed from YAG, TAG, Silicate, Nitride, and Oxy-nitride based materials. The phosphor may include at least one of a red phosphor, a yellow phosphor, and a green phosphor, but the present invention is not limited thereto. The surface of the molding member 61 may be formed in a flat shape, concave shape, convex shape and the like, but is not limited thereto.

A lens may be further formed on an upper portion of the body 11, and the lens may include a concave or / and convex lens structure, and may provide a light distribution of light emitted from the light emitting device package 100. I can regulate it.

A semiconductor device such as a light receiving device or a protection device may be mounted on the body 11 or any one lead frame, and the protection device may be implemented as a thyristor, a zener diode, or a transient voltage suppression (TVS). The zener diode protects the light emitting chip from electro static discharge (ESD).

8 is another example of the heat dissipation frame of FIG. 3.

Referring to FIG. 8, the heat dissipation frame 21 may include a first heat dissipation part 23 and a second heat dissipation part 24. The first heat dissipation part 23 is bent from the heat dissipation frame 21 and disposed on the second side surface part S2 of the body 11, and the second heat dissipation part 24 is the first heat dissipation part ( It is bent from 23 and disposed on the fifth side portion S5 of the body 11. Here, the width D2 of the second heat dissipation part 24 may be formed to be narrower than the width D1 of the fifth side surface part S5 of the body 11, which is the width of the second heat dissipation part 24. By blocking a part protruding on the first side portion (S1) of the body 11, it is possible to prevent the electrical short problem. In addition, a protrusion 17 is formed on the fifth side portion S5 of the body 11, and the protrusion 17 spaces the second heat radiating portion 24 from the first side portion S1 of the body 11. Will let you.

9 is another example of the heat dissipation frame of FIG. 2.

Referring to FIG. 9, the heat dissipation frame 21A of the light emitting device package includes a cup structure 15A concave in a direction deeper than the bottom of the cavity 15. The cup structure 15A of the heat dissipation frame 21A may increase the heat dissipation area, and the light emitting chip 101 may be disposed therein. The lower portion of the cup structure 21A of the heat dissipation frame 21A is exposed to the fifth side portion S5 of the body 11, thereby further maximizing the heat dissipation effect through the air.

10 and 11 are views illustrating an example of a light emitting module in which a light emitting device package according to an embodiment is mounted on a substrate.

Referring to FIG. 10, the light emitting module 300 is a light emitting device, and includes a substrate 200, at least one light emitting device package 100 on which a first side portion S1 is mounted on the substrate 200, and the light emitting device. The heat dissipation plate 205 is included on the package 100.

The substrate 200 may include a board on which a circuit pattern is printed on an insulating layer. For example, a resin-based printed circuit board (PCB), a metal core PCB, and a flexible board may be used. PCB, ceramic PCB, FR-4 substrates.

The substrate 200 is, for example, a metal core PCB, and the metal core PCB further includes a metal layer having better heat dissipation efficiency than other resin-based substrates. For example, the metal core PCB includes a metal layer, an insulating layer on the metal layer, and a laminated structure having a wiring layer on the insulating layer, wherein the metal layer forms a heat conductive metal having a thickness of 0.3 mm or more to increase heat dissipation efficiency. Will let you.

At least one light emitting device package 100 is mounted on the substrate 200, and the light emitting device package 100 includes a first lead portion and a second lead portion disposed on a first side portion S1 of the substrate 200. It is solder bonded onto it.

In addition, the heat dissipation plate 205 is a metal material, for example, a plate such as aluminum (Al) having good thermal conductivity, and is adhered to the first heat dissipation part 23 of the light emitting device package 100 by an adhesive member. Heat generated from the light emitting chip 101 of the light emitting device package 100 is conducted by the first heat radiating part 23 of the heat radiating frame 21 to radiate heat. The adhesive member may be a double-sided tape having thermal conductivity, but is not limited thereto.

When the light emitting device package 100 as shown in FIG. 8 is mounted, the heat dissipating plate 205 contacts the first and second heat dissipating parts on the second side portion S2 and the fifth side portion of the light emitting device package 100. It may be provided as a bent plate so that it can be.

12 is a view illustrating a light emitting chip of the light emitting device package of FIG. 1.

Referring to FIG. 12, the light emitting chip 101 may include a growth substrate 111, a buffer layer 113, a low conductive layer 115, a first conductive semiconductor layer 117, an active layer 119, and a second cladding layer ( 121, and a second conductive semiconductor layer 123.

The growth substrate 111 may use a light transmissive, insulating or conductive substrate, for example, sapphire (Al 2 O 3 ), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, Ga 2 O 3 At least one of LiGaO 3 may be used. A plurality of protrusions 112 may be formed on an upper surface of the growth substrate 111, and the plurality of protrusions 112 may be formed through etching of the growth substrate 111, or may include light such as a separate roughness. It may be formed into an extraction structure. The protrusion 112 may include a stripe shape, a hemispherical shape, or a dome shape. The growth substrate 111 may have a thickness in the range of 30 μm to 150 μm, but is not limited thereto.

A plurality of compound semiconductor layers may be grown on the growth substrate 111, and the growth equipment of the plurality of compound semiconductor layers may be an electron beam evaporator, a physical vapor deposition (PVD), a chemical vapor deposition (CVD), or a plasma laser deposition (PLD). Can be formed by dual-type thermal evaporator sputtering, metal organic chemical vapor deposition (MOCVD), and the like, but is not limited thereto.

A buffer layer 113 may be formed on the growth substrate 111, and the buffer layer 113 may be formed of at least one layer using a group II to group VI compound semiconductor. The buffer layer 113 comprises a semiconductor layer using a group III -V compound semiconductor, for example, In x Al y Ga 1 -x- y N (0≤x≤1, 0≤y≤1, 0≤x A semiconductor having a compositional formula of + y ≦ 1) includes at least one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, and the like. The buffer layer 113 may be formed in a super lattice structure by alternately arranging different semiconductor layers.

The buffer layer 113 may be formed to alleviate the difference in lattice constant between the growth substrate 111 and the nitride-based semiconductor layer, and may be defined as a defect control layer. The buffer layer 113 may have a value between lattice constants between the growth substrate 111 and the nitride-based semiconductor layer. The buffer layer 113 may be formed of an oxide such as a ZnO layer, but is not limited thereto. The buffer layer 113 may be formed in the range of 30 to 500 nm, but is not limited thereto.

A low conductive layer 115 is formed on the buffer layer 113, and the low conductive layer 115 is an undoped semiconductor layer and has a lower electrical conductivity than the first conductive semiconductor layer 117. The low conductive layer 115 may be implemented as a GaN-based semiconductor using a group III-V compound semiconductor, and the undoped semiconductor layer may have a first conductivity type even without intentionally doping a conductive dopant. The undoped semiconductor layer may not be formed, but is not limited thereto. The low conductive layer 115 may be formed between the plurality of first conductive semiconductor layers 117.

The first conductive semiconductor layer 117 may be formed on the low conductive layer 115. The first conductive semiconductor layer 117 is formed of a group III-V group compound semiconductor doped with a first conductive dopant, for example, In x Al y Ga 1 -x- y N (0 ≦ x ≦ 1, 0 Y? 1, 0? X + y? 1). When the first conductive semiconductor layer 117 is an n-type semiconductor layer, the dopant of the first conductive type is an n-type dopant and includes Si, Ge, Sn, Se, and Te.

At least one of the low conductive layer 115 and the first conductive semiconductor layer 117 may have a superlattice structure in which different first and second layers are alternately arranged, and the first layer And the thickness of the second layer may be formed to a few Å or more.

A first cladding layer (not shown) may be formed between the first conductive semiconductor layer 117 and the active layer 119, and the first cladding layer may be formed of a GaN-based semiconductor. The first cladding layer serves to restrain the carrier. As another example, the first cladding layer (not shown) may be formed of an InGaN layer or an InGaN / GaN superlattice structure, but is not limited thereto. The first cladding layer may include an n-type and / or p-type dopant, and may be formed of, for example, a first conductive type or low conductivity semiconductor layer.

An active layer 119 is formed on the first conductive semiconductor layer 117. The active layer 119 may be formed of at least one of a single well, a single quantum well, a multi well, a multi quantum well (MQW), a quantum line, and a quantum dot structure. In the active layer 119, a well layer and a barrier layer are alternately disposed, and the well layer may be a well layer having a continuous energy level. In addition, the well layer may be a quantum well in which the energy level is quantized. The well layer may be defined as a quantum well layer, and the barrier layer may be defined as a quantum barrier layer. The pair of the well layer and the barrier layer may be formed in 2 to 30 cycles. The well layer is, for example, may be formed of a semiconductor material having a compositional formula of In x Al y Ga 1 -x- y N (0≤x≤1, 0≤y≤1, 0≤x + y≤1). The barrier layer is a semiconductor layer having a band gap wider than the band gap of the well layer. For example, In x Al y Ga 1 -x- y N (0≤x≤1, 0≤y≤1, 0≤x + It can be formed from a semiconductor material having a compositional formula of y≤1). The pair of the well layer and the barrier layer includes, for example, at least one of InGaN / GaN, AlGaN / GaN, InGaN / AlGaN, InGaN / InGaN.

The active layer 119 may selectively emit light in the wavelength range of the ultraviolet band to the visible light band, for example, may emit a peak wavelength in the range of 420nm to 450nm.

The second clad layer 121 is formed on the active layer 119, and the second clad layer 121 has a higher band gap than the band gap of the barrier layer of the active layer 119. The compound semiconductor may be formed of, for example, a GaN-based semiconductor. For example, the second clad layer 121 may include GaN, AlGaN, InAlGaN, InAlGaN superlattice structure, or the like. The second clad layer 121 may include an n-type and / or p-type dopant, and may be formed of, for example, a second conductive or low conductivity semiconductor layer.

A second conductive semiconductor layer 123 is formed on the second cladding layer 121, and the second conductive semiconductor layer 123 includes a dopant of a second conductive type. The second conductive semiconductor layer 123 may be formed of at least one of a group III-V compound semiconductor, for example, a compound semiconductor such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, etc., and may include a single layer or a multilayer. . When the second conductive semiconductor layer 123 is a p-type semiconductor layer, the second conductive dopant may be a p-type dopant and may include Mg, Zn, Ca, Sr, and Ba.

The conductive types of the layers of the light emitting structure 150 may be formed to be opposite to each other. For example, the second conductive semiconductor layer 123 may be an n-type semiconductor layer, and the first conductive semiconductor layer 117 may be a p-type semiconductor layer. It can be implemented as. An n-type semiconductor layer, which is a third conductive semiconductor layer having a polarity opposite to that of the second conductive type, may be further formed on the second conductive semiconductor layer 123. The light emitting chip 101 may define the first conductive semiconductor layer 117, the active layer 119, and the second conductive semiconductor layer 123 as a light emitting structure 150. ) May include at least one of an np junction structure, a pn junction structure, an npn junction structure, and a pnp junction structure. In the n-p and p-n junctions, an active layer is disposed between two layers, and an n-p-n junction or a p-n-p junction includes at least one active layer between three layers.

An electrode layer 141 and a second electrode 145 are formed on the light emitting structure 150, and a first electrode 143 is formed on the first conductive semiconductor layer 117.

The electrode layer 141 is a current diffusion layer and may be formed of a material having transparency and electrical conductivity. The electrode layer 141 may be formed to have a refractive index lower than that of the compound semiconductor layer.

The electrode layer 141 is formed on an upper surface of the second conductive semiconductor layer 123, and the material may be indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), or indium aluminum (AZO). zinc oxide (IGZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), ZnO, IrOx, RuOx, NiO, etc. Selected, and may be formed of at least one layer. The electrode layer 141 may be formed as a reflective electrode layer, and the material may be selectively formed among, for example, Al, Ag, Pd, Rh, Pt, Ir, and two or more alloys thereof.

The second electrode 145 may be formed on the second conductive semiconductor layer 123 and / or the electrode layer 141, and may include an electrode pad. The second electrode 145 may further include a current spreading pattern having an arm structure or a finger structure. The second electrode 145 may be made of a metal having the characteristics of an ohmic contact, an adhesive layer, and a bonding layer, but is not limited thereto.

A first electrode 143 is formed on a portion of the first conductive semiconductor layer 117. The first electrode 143 and the second electrode 145 are Ti, Ru, Rh, Ir, Mg, Zn, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Au and Au It can be chosen from the optional alloys.

An insulating layer may be further formed on the surface of the light emitting device 101, and the insulating layer may prevent an interlayer short of the light emitting structure 150 and prevent moisture penetration.

The light emitting module or substrate according to the embodiment (s) disclosed above may be applied to a light unit. The light unit includes a structure in which a plurality of light emitting devices or light emitting device packages are arranged, and may include a display device, another lighting lamp, a traffic light, a vehicle headlight, an electronic signboard, and the like shown in FIG. 13.

13 is an exploded perspective view of a display device according to an exemplary embodiment.

Referring to FIG. 13, the display device 1000 includes a light guide plate 1041, a light emitting module 300 that provides light to the light guide plate 1041, a reflective member 1022 under the light guide plate 1041, and the light guide plate 1041. A bottom cover 1011 that houses an optical sheet 1051 on the light guide plate 1041, a display panel 1061 on the optical sheet 1051, the light guide plate 1041, a light emitting module 300, and a reflective member 1022. ), But is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 serves to diffuse surface light provided from the light emitting module 300 to make a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module 300 is disposed on at least one side of the light guide plate 1041 to provide light to at least one side of the light guide plate 1041, and ultimately serves as a light source of the display device.

At least one light emitting module 300 is disposed in the bottom cover 1011, and may provide light directly or indirectly at one side of the light guide plate 1041. The light emitting module 300 may include a substrate 200 and a light emitting device package 100 according to the embodiment disclosed above, and the light emitting device package 200 may be arranged on the substrate 200 at predetermined intervals. have. The heat dissipation plate 205 may be disposed on the light emitting device package 100, and a portion of the heat dissipation plate 205 may be in contact with the bottom cover 1011. Therefore, heat generated in the light emitting device package 100 may be discharged to the bottom cover 1011 via the heat dissipation plate 205.

The plurality of light emitting device packages 100 may be mounted on the substrate 200 such that an emission surface from which light is emitted is spaced apart from the light guide plate 1041 by a predetermined distance, but is not limited thereto. The light emitting device 30 may directly or indirectly provide light to a light incident portion, which is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 reflects the light incident on the lower surface of the light guide plate 1041 and supplies the reflected light to the display panel 1061 to improve the brightness of the display panel 1061. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may accommodate the light guide plate 1041, the light emitting module 300, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be coupled to a top cover (not shown), but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, and includes a first and second substrates of transparent materials facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 transmits or blocks light provided from the light emitting module 300 to display information. The display device 1000 can be applied to video display devices such as portable terminals, monitors of notebook computers, monitors of laptop computers, and televisions.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal / vertical prism sheet, a brightness enhanced sheet, and the like. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet concentrates incident light on the display panel 1061. The brightness enhancing sheet reuses the lost light to improve the brightness I will. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

The light guide plate 1041 and the optical sheet 1051 may be included as an optical member on the optical path of the light emitting module 300, but are not limited thereto.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in each embodiment may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100: light emitting device package 11: body
12: support portion 13: reflecting portion
15: cavity 21: heat dissipation frame
23, 24: heat dissipation part 31, 41: lead frame
33,43: lead portion 101: light emitting chip
200: substrate 205: heat dissipation plate
300: light emitting module

Claims (11)

Board;
At least one light emitting device package mounted on the substrate; And
It includes a heat dissipation plate in contact with the light emitting device package,
The light emitting device package,
A body having a cavity;
A first lead frame and a second lead frame disposed in the cavity of the body;
A heat dissipation frame disposed between the first lead frame and the second lead frame disposed in the cavity;
At least one light emitting chip on the heat dissipation frame; And
A first lead portion and a second lead portion disposed on the first side portion of the body,
The heat dissipation frame includes a first heat dissipation unit bent from the heat dissipation frame and disposed in contact with the heat dissipation plate on the second side portion opposite the first side portion of the body. The light emitting device of claim 1, further comprising an adhesive member between the first heat dissipation unit of the heat dissipation frame and the heat dissipation plate. The light emitting device of claim 1, wherein the first heat dissipation part of the heat dissipation frame has a width equal to a width of the second side part of the body. 4. The apparatus of claim 1, further comprising: a first lead portion bent from the first lead frame to a first region of the first side portion of the body; And a second lead portion bent from the second lead frame to a second region of the first side portion of the body. 4. The light emitting device of claim 1, wherein the heat dissipation frame includes a second heat dissipation unit bent from the first heat dissipation unit and disposed on an opposite side of a side surface of the cavity in which the cavity is formed. The light emitting device of claim 5, wherein the heat dissipation plate contacts the first heat dissipation unit and the second heat dissipation unit of the heat dissipation frame. The light emitting device of claim 5, wherein the body includes a protrusion that separates the second heat dissipation unit of the heat dissipation frame from the first side surface of the body. The light emitting device of claim 4, wherein the heat dissipation frame includes a cup structure having a depth deeper in the cavity than the bottom of the cavity. The light emitting device of claim 8, wherein the heat dissipation frame disposed in the cavity is exposed to a surface opposite to a surface on which the cavity of the body is formed. The light emitting device of claim 1, further comprising at least one hole formed in the heat dissipation frame disposed in the body, wherein the at least one hole has a portion of the body disposed therein. The light emitting device of claim 4, wherein the heat dissipation frame is a non-polar terminal.
KR1020110082108A 2011-08-18 2011-08-18 Light emitting apparatus KR101840031B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020110082108A KR101840031B1 (en) 2011-08-18 2011-08-18 Light emitting apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110082108A KR101840031B1 (en) 2011-08-18 2011-08-18 Light emitting apparatus

Publications (2)

Publication Number Publication Date
KR20130019854A true KR20130019854A (en) 2013-02-27
KR101840031B1 KR101840031B1 (en) 2018-03-20

Family

ID=47897898

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110082108A KR101840031B1 (en) 2011-08-18 2011-08-18 Light emitting apparatus

Country Status (1)

Country Link
KR (1) KR101840031B1 (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWM312020U (en) * 2006-12-04 2007-05-11 Lighthouse Technology Co Ltd Light emitting diode package structure
KR101028195B1 (en) * 2010-01-18 2011-04-11 엘지이노텍 주식회사 Light emitting device package and light unit having the same

Also Published As

Publication number Publication date
KR101840031B1 (en) 2018-03-20

Similar Documents

Publication Publication Date Title
US10559734B2 (en) Light emitting device package and light unit including the same
JP5999929B2 (en) Light emitting device package and lighting system using the same
KR20130021300A (en) Light emitting device, light emitting device package, and light unit
KR101831410B1 (en) Light emitting device package and light emitting apparatus having the same
KR101865918B1 (en) Light emitting device, method for fabricating the same, and light emitting device package
KR102008313B1 (en) Light emitting device, light emitting device package, and light unit
KR101873585B1 (en) Light emitting device package and lighting system having the same
KR101886073B1 (en) Light emitting device and light unit having thereof
KR101734541B1 (en) Light emitting device, light emitting device package
KR20130065327A (en) Light emitting device, light emitting device package, and light unit
KR20170090094A (en) Light emitting device package and light emitting apparatus having the same
KR101921154B1 (en) Light emitting module and lightunit having the same
KR101946831B1 (en) Light emitting device package
KR101869553B1 (en) Light emitting device, light emitting device package, and light unit
KR101818771B1 (en) Light emitting device, light emitting device package, and light unit
KR101852566B1 (en) Light emitting device, light emitting device package, and light unit
KR102019498B1 (en) Light emitting device and lighting system
KR20130009037A (en) Light emitting module and light unit having thereof
KR101840031B1 (en) Light emitting apparatus
KR101872521B1 (en) Light emitting device package and lighting system having the same
KR20130022055A (en) Light emitting package and light emitting apparatus having the same
KR101905575B1 (en) Light emitting device
KR101866568B1 (en) Light emitting device and light unit having the same
KR20130018071A (en) Light emitting device package and light emitting apparatus having the same
KR20130016666A (en) Light emitting device, light emitting device package, and light unit

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right