KR20130006650A - 레이저 산출 플라즈마 ｅｕｖ 광원 - Google Patents

레이저 산출 플라즈마 ｅｕｖ 광원 Download PDF

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Publication number
KR20130006650A
KR20130006650A KR1020127026406A KR20127026406A KR20130006650A KR 20130006650 A KR20130006650 A KR 20130006650A KR 1020127026406 A KR1020127026406 A KR 1020127026406A KR 20127026406 A KR20127026406 A KR 20127026406A KR 20130006650 A KR20130006650 A KR 20130006650A
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KR
South Korea
Prior art keywords
droplet
droplets
waveform
disturbance
frequency
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Ceased
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KR1020127026406A
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English (en)
Korean (ko)
Inventor
게오르기 오. 바스첸코
알렉산더 아이. 어쇼프
리차드 엘. 샌드스트롬
Original Assignee
사이머 인코포레이티드
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Publication of KR20130006650A publication Critical patent/KR20130006650A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/002—Supply of the plasma generating material
    • H05G2/0027—Arrangements for controlling the supply; Arrangements for measurements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • X-Ray Techniques (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020127026406A 2010-03-10 2011-03-01 레이저 산출 플라즈마 ｅｕｖ 광원 Ceased KR20130006650A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/721,317 2010-03-10
US12/721,317 US8158960B2 (en) 2007-07-13 2010-03-10 Laser produced plasma EUV light source
PCT/US2011/000374 WO2011112235A1 (en) 2010-03-10 2011-03-01 Laser produced plasma euv light source

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020177015321A Division KR101887104B1 (ko) 2010-03-10 2011-03-01 레이저 산출 플라즈마 ｅｕｖ 광원

Publications (1)

Publication Number Publication Date
KR20130006650A true KR20130006650A (ko) 2013-01-17

Family

ID=44563770

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020127026406A Ceased KR20130006650A (ko) 2010-03-10 2011-03-01 레이저 산출 플라즈마 ｅｕｖ 광원
KR1020177015321A Active KR101887104B1 (ko) 2010-03-10 2011-03-01 레이저 산출 플라즈마 ｅｕｖ 광원

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020177015321A Active KR101887104B1 (ko) 2010-03-10 2011-03-01 레이저 산출 플라즈마 ｅｕｖ 광원

Country Status (7)

Country Link
US (1) US8158960B2 (enExample)
EP (1) EP2544766B1 (enExample)
JP (2) JP6403362B2 (enExample)
KR (2) KR20130006650A (enExample)
CN (1) CN102791331B (enExample)
TW (1) TWI479955B (enExample)
WO (1) WO2011112235A1 (enExample)

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Also Published As

Publication number Publication date
EP2544766A4 (en) 2016-01-27
EP2544766B1 (en) 2017-08-02
KR20170066704A (ko) 2017-06-14
JP2013522823A (ja) 2013-06-13
TWI479955B (zh) 2015-04-01
KR101887104B1 (ko) 2018-08-09
JP6557716B2 (ja) 2019-08-07
US8158960B2 (en) 2012-04-17
JP2018041110A (ja) 2018-03-15
WO2011112235A1 (en) 2011-09-15
CN102791331B (zh) 2016-02-17
EP2544766A1 (en) 2013-01-16
JP6403362B2 (ja) 2018-10-10
CN102791331A (zh) 2012-11-21
TW201143538A (en) 2011-12-01
US20100294953A1 (en) 2010-11-25

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