JP6403362B2 - レーザ生成プラズマｅｕｖ光源 - Google Patents

レーザ生成プラズマｅｕｖ光源 Download PDF

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Publication number
JP6403362B2
JP6403362B2 JP2012557036A JP2012557036A JP6403362B2 JP 6403362 B2 JP6403362 B2 JP 6403362B2 JP 2012557036 A JP2012557036 A JP 2012557036A JP 2012557036 A JP2012557036 A JP 2012557036A JP 6403362 B2 JP6403362 B2 JP 6403362B2
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Prior art keywords
droplet
waveform
droplets
frequency
laser
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Japanese (ja)
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JP2013522823A (ja
JP2013522823A5 (enExample
Inventor
ゲオルギー オー ヴァスチェンコ
ゲオルギー オー ヴァスチェンコ
アーショフ　アレクサンダー　アイ
アレクサンダー アイ アーショフ
サンドストロム　リチャード　エル
リチャード エル サンドストロム
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ASML Netherlands BV
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ASML Netherlands BV
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/002—Supply of the plasma generating material
    • H05G2/0027—Arrangements for controlling the supply; Arrangements for measurements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • X-Ray Techniques (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2012557036A 2010-03-10 2011-03-01 レーザ生成プラズマｅｕｖ光源 Active JP6403362B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/721,317 2010-03-10
US12/721,317 US8158960B2 (en) 2007-07-13 2010-03-10 Laser produced plasma EUV light source
PCT/US2011/000374 WO2011112235A1 (en) 2010-03-10 2011-03-01 Laser produced plasma euv light source

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017237953A Division JP6557716B2 (ja) 2010-03-10 2017-12-12 レーザ生成プラズマｅｕｖ光源

Publications (3)

Publication Number Publication Date
JP2013522823A JP2013522823A (ja) 2013-06-13
JP2013522823A5 JP2013522823A5 (enExample) 2018-08-23
JP6403362B2 true JP6403362B2 (ja) 2018-10-10

Family

ID=44563770

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2012557036A Active JP6403362B2 (ja) 2010-03-10 2011-03-01 レーザ生成プラズマｅｕｖ光源
JP2017237953A Active JP6557716B2 (ja) 2010-03-10 2017-12-12 レーザ生成プラズマｅｕｖ光源

Family Applications After (1)

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JP2017237953A Active JP6557716B2 (ja) 2010-03-10 2017-12-12 レーザ生成プラズマｅｕｖ光源

Country Status (7)

Country Link
US (1) US8158960B2 (enExample)
EP (1) EP2544766B1 (enExample)
JP (2) JP6403362B2 (enExample)
KR (2) KR101887104B1 (enExample)
CN (1) CN102791331B (enExample)
TW (1) TWI479955B (enExample)
WO (1) WO2011112235A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018041110A (ja) * 2010-03-10 2018-03-15 エーエスエムエル ネザーランズ ビー．ブイ． レーザ生成プラズマｅｕｖ光源

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JP6283684B2 (ja) 2013-11-07 2018-02-21 ギガフォトン株式会社 極端紫外光生成装置及び極端紫外光生成装置の制御方法
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Publication number Priority date Publication date Assignee Title
JP2018041110A (ja) * 2010-03-10 2018-03-15 エーエスエムエル ネザーランズ ビー．ブイ． レーザ生成プラズマｅｕｖ光源

Also Published As

Publication number Publication date
TW201143538A (en) 2011-12-01
US20100294953A1 (en) 2010-11-25
EP2544766A4 (en) 2016-01-27
WO2011112235A1 (en) 2011-09-15
CN102791331B (zh) 2016-02-17
CN102791331A (zh) 2012-11-21
TWI479955B (zh) 2015-04-01
JP2013522823A (ja) 2013-06-13
KR20130006650A (ko) 2013-01-17
JP6557716B2 (ja) 2019-08-07
EP2544766A1 (en) 2013-01-16
JP2018041110A (ja) 2018-03-15
KR101887104B1 (ko) 2018-08-09
US8158960B2 (en) 2012-04-17
KR20170066704A (ko) 2017-06-14
EP2544766B1 (en) 2017-08-02

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