JP2013522823A - レーザ生成プラズマeuv光源 - Google Patents
レーザ生成プラズマeuv光源 Download PDFInfo
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- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
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- H—ELECTRICITY
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- H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
- H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component
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Abstract
【選択図】 図1
Description
ここで、tは時間であり、v(t)は波の瞬間的な振幅(すなわち、電圧)であり、ωは角振動数である。従って、例えば、圧電の電気起動可能な要素に方形波信号を印加すると、結果的に基本周波数f=ω/2π、並びにこの周波数よりも高い高調波3f、5fなどで機械的振動が発生する場合がある。これは、電気起動可能な要素を使用する液滴発生器の制限されて一般的な場合に非常に不均一な周波数応答のために起こり得る。方形波信号の基本周波数が0.3ν/πdの限界値を有意に超える場合に、この周波数での単一の液滴の形成が事実上禁止され、液滴は、より高い高調波で生成される。上述の振幅及び周波数変調の場合のように、方形波信号で生成される液滴は、流れ内の隣接液滴に対して、周波数でより大きな液滴への最終的な合体を引き起こす差速を有する。一部の実施例では、EUV光源は、周期当たりに複数の液滴が生成されて各液滴が、1)少なくとも2つの液滴が照射部位に到達する前に合体するか、又は2)液滴が密接に離間した液滴ダブレット(以下に説明する内容を参照されたい)を含むパターンのような望ましいパターンを生成するようにその後の液滴より異なる初速を有するように構成される。
22 光パルスを送出するシステム
26 チャンバ
62 液滴位置検出フィードバックシステム
90 液滴制御システム
Claims (20)
- 装置であって、
ターゲット材料液滴の供給源と照射領域で該液滴を照射するビームを生成するレーザとを含むプラズマ発生システム、
を含み、
前記プラズマは、EUV放射線を生成し、
前記液滴供給源は、オリフィスを出る流体と、前記液滴が前記照射領域に進む時に少なくとも一部の隣接液滴間の間隔を低減させる異なる初速を有する液滴を発生させる外乱を該流体に生成するサブシステムとを含む、
ことを特徴とする装置。 - 少なくとも一部の隣接液滴は、前記照射領域に到達する前に合体することを特徴とする請求項1に記載の装置。
- 前記サブシステムは、液滴パターンを生成し、
液滴ダブレットが、前記照射部位に到達し、該液滴ダブレットにおける各液滴が、プラズマを生成するために照射される、
ことを特徴とする請求項1に記載の装置。 - 前記液滴ダブレットにおける少なくとも1つの液滴が、直径dを有し、前記照射部位に接近し、各ダブレット内の中心間液滴間隔がDであり、ここで、d≦D≦4dであることを特徴とする請求項3に記載の装置。
- 前記外乱は、周波数変調外乱波形を含むことを特徴とする請求項1に記載の装置。
- 前記外乱は、振幅変調外乱波形を含むことを特徴とする請求項1に記載の装置。
- 前記サブシステムは、一連のパルス外乱を生成し、各パルス外乱は、基本周波数と該基本周波数の少なくとも1つの高調波とを発生させるのに十分に短い立上り時間及び十分に短い立下り時間のうちの少なくとも一方を有することを特徴とする請求項1に記載の装置。
- 装置であって、
ターゲット材料液滴の供給源と照射領域で該液滴を照射するビームを生成するレーザとを含むプラズマ発生システム、
を含み、
前記プラズマは、EUV放射線を生成し、
前記液滴供給源は、オリフィスを出る流体と、該流体に外乱を生成する電気起動可能な要素を有するサブシステムとを含み、該電気起動可能な要素は、該電気起動可能な要素の作動可能な応答範囲内の基本周波数と該基本周波数の少なくとも1つの高調波とを発生させるのに十分に短い立上り時間及び十分に短い立下り時間のうちの少なくとも一方を有する波形により駆動される、
ことを特徴とする装置。 - 前記波形は、方形波、矩形波、及びピークを有する非正弦波から構成された波形の群から選択されることを特徴とする請求項8に記載の装置。
- 前記ピークを有する非正弦波は、高速パルス波形、高速ランプ波形、及びシンク関数波形から構成された波形の群から選択されることを特徴とする請求項8に記載の装置。
- 前記少なくとも1つの高調波は、前記基本周波数の奇数高調波であることを特徴とする請求項8に記載の装置。
- 前記少なくとも1つの高調波は、前記基本周波数の少なくとも1つの偶数高調波と該基本周波数の少なくとも1つの奇数高調波とを含むことを特徴とする請求項8に記載の装置。
- 前記波形は、前記液滴が前記照射領域に進む時に少なくとも一部の隣接液滴間の間隔を低減させる異なる初速を有する液滴を発生させることを特徴とする請求項8に記載の装置。
- 少なくとも一部の隣接液滴は、前記照射領域に到達する前に合体することを特徴とする請求項12に記載の装置。
- 各パルスが、オン−オフスイッチ状態を変えることによって発生されることを特徴とする請求項8に記載の装置。
- 流体をオリフィスに向けて流動させる段階と、
前記流体を乱して第1の液滴と第2の液滴を発生させ、該第1の液滴が該第2の液滴と異なる初速を有して該第1及び第2の液滴間の間隔をこれらの液滴が照射領域に進む時に低減させる段階と、
液滴材料を前記照射領域で照射してプラズマを形成する段階と、
を含むことを特徴とする方法。 - 前記第1及び第2の液滴は、前記照射領域に到達する前に合体することを特徴とする請求項15に記載の方法。
- 前記外乱は、周波数変調外乱波形及び振幅変調外乱波形から構成された変調波形の群から選択された波形を含むことを特徴とする請求項15に記載の方法。
- 前記流体を乱す前記段階は、一連のパルス外乱を生成する段階を含み、各パルス外乱は、基本周波数と該基本周波数の少なくとも1つの低調波とを発生させるのに十分に短い立上り時間及び十分に短い立下り時間のうちの少なくとも一方を有することを特徴とする請求項15に記載の方法。
- 前記パルス外乱は、方形波、矩形波、及びピークを有する非正弦波から構成された外乱波形の群から選択されることを特徴とする請求項18に記載の方法。
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/721,317 | 2010-03-10 | ||
US12/721,317 US8158960B2 (en) | 2007-07-13 | 2010-03-10 | Laser produced plasma EUV light source |
PCT/US2011/000374 WO2011112235A1 (en) | 2010-03-10 | 2011-03-01 | Laser produced plasma euv light source |
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JP2017237953A Division JP6557716B2 (ja) | 2010-03-10 | 2017-12-12 | レーザ生成プラズマeuv光源 |
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JP2013522823A true JP2013522823A (ja) | 2013-06-13 |
JP2013522823A5 JP2013522823A5 (ja) | 2018-08-23 |
JP6403362B2 JP6403362B2 (ja) | 2018-10-10 |
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JP2012557036A Active JP6403362B2 (ja) | 2010-03-10 | 2011-03-01 | レーザ生成プラズマeuv光源 |
JP2017237953A Active JP6557716B2 (ja) | 2010-03-10 | 2017-12-12 | レーザ生成プラズマeuv光源 |
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US (1) | US8158960B2 (ja) |
EP (1) | EP2544766B1 (ja) |
JP (2) | JP6403362B2 (ja) |
KR (2) | KR20130006650A (ja) |
CN (1) | CN102791331B (ja) |
TW (1) | TWI479955B (ja) |
WO (1) | WO2011112235A1 (ja) |
Cited By (1)
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