CN102791331B - 激光产生的等离子体euv光源 - Google Patents

激光产生的等离子体euv光源 Download PDF

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Publication number
CN102791331B
CN102791331B CN201180013023.0A CN201180013023A CN102791331B CN 102791331 B CN102791331 B CN 102791331B CN 201180013023 A CN201180013023 A CN 201180013023A CN 102791331 B CN102791331 B CN 102791331B
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China
Prior art keywords
droplet
waveform
drop
droplets
plasma
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English (en)
Chinese (zh)
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CN102791331A (zh
Inventor
G·O·瓦斯恩冦
A·I·叶尔绍夫
R·L·桑德斯特伦
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ASML Netherlands BV
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ASML Netherlands BV
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008Production of exposure light, i.e. light sources
    • G03F7/70033Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2002Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • GPHYSICS
    • G21NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21KTECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00Irradiation devices
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05GX-RAY TECHNIQUE
    • H05G2/00Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001Production of X-ray radiation generated from plasma
    • H05G2/002Supply of the plasma generating material
    • H05G2/0027Arrangements for controlling the supply; Arrangements for measurements
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05GX-RAY TECHNIQUE
    • H05G2/00Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001Production of X-ray radiation generated from plasma
    • H05G2/003Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • X-Ray Techniques (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201180013023.0A 2010-03-10 2011-03-01 激光产生的等离子体euv光源 Active CN102791331B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/721,317 2010-03-10
US12/721,317 US8158960B2 (en) 2007-07-13 2010-03-10 Laser produced plasma EUV light source
PCT/US2011/000374 WO2011112235A1 (en) 2010-03-10 2011-03-01 Laser produced plasma euv light source

Publications (2)

Publication Number Publication Date
CN102791331A CN102791331A (zh) 2012-11-21
CN102791331B true CN102791331B (zh) 2016-02-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180013023.0A Active CN102791331B (zh) 2010-03-10 2011-03-01 激光产生的等离子体euv光源

Country Status (7)

Country Link
US (1) US8158960B2 (enExample)
EP (1) EP2544766B1 (enExample)
JP (2) JP6403362B2 (enExample)
KR (2) KR101887104B1 (enExample)
CN (1) CN102791331B (enExample)
TW (1) TWI479955B (enExample)
WO (1) WO2011112235A1 (enExample)

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JP6151941B2 (ja) 2013-03-22 2017-06-21 ギガフォトン株式会社 ターゲット生成装置及び極端紫外光生成装置
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KR102746923B1 (ko) * 2018-03-28 2024-12-24 에이에스엠엘 네델란즈 비.브이. 액적 생성기 성능을 모니터링 및 제어하는 장치 및 방법
TWI840411B (zh) 2018-09-24 2024-05-01 荷蘭商Asml荷蘭公司 目標形成設備
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Also Published As

Publication number Publication date
US8158960B2 (en) 2012-04-17
KR101887104B1 (ko) 2018-08-09
JP2018041110A (ja) 2018-03-15
EP2544766B1 (en) 2017-08-02
JP6403362B2 (ja) 2018-10-10
TWI479955B (zh) 2015-04-01
EP2544766A4 (en) 2016-01-27
JP6557716B2 (ja) 2019-08-07
JP2013522823A (ja) 2013-06-13
CN102791331A (zh) 2012-11-21
EP2544766A1 (en) 2013-01-16
TW201143538A (en) 2011-12-01
KR20170066704A (ko) 2017-06-14
US20100294953A1 (en) 2010-11-25
KR20130006650A (ko) 2013-01-17
WO2011112235A1 (en) 2011-09-15

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