KR20120128643A - 방향성 응고로에서 사용하기 위한 도가니 - Google Patents
방향성 응고로에서 사용하기 위한 도가니 Download PDFInfo
- Publication number
- KR20120128643A KR20120128643A KR1020127022328A KR20127022328A KR20120128643A KR 20120128643 A KR20120128643 A KR 20120128643A KR 1020127022328 A KR1020127022328 A KR 1020127022328A KR 20127022328 A KR20127022328 A KR 20127022328A KR 20120128643 A KR20120128643 A KR 20120128643A
- Authority
- KR
- South Korea
- Prior art keywords
- crucible
- base
- directional solidification
- plate
- solidification furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000007711 solidification Methods 0.000 title claims abstract description 52
- 230000008023 solidification Effects 0.000 title claims abstract description 52
- 239000000155 melt Substances 0.000 claims abstract description 32
- 239000000654 additive Substances 0.000 claims abstract description 16
- 239000002131 composite material Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 230000000996 additive effect Effects 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 5
- 239000011230 binding agent Substances 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 5
- 239000010439 graphite Substances 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 230000000295 complement effect Effects 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 25
- 239000000463 material Substances 0.000 description 23
- 239000000377 silicon dioxide Substances 0.000 description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000005350 fused silica glass Substances 0.000 description 3
- -1 silica compound Chemical class 0.000 description 3
- 239000002826 coolant Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US29913310P | 2010-01-28 | 2010-01-28 | |
| US61/299,133 | 2010-01-28 | ||
| PCT/IB2011/050392 WO2011092659A1 (en) | 2010-01-28 | 2011-01-28 | Crucible for use in a directional solidification furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20120128643A true KR20120128643A (ko) | 2012-11-27 |
Family
ID=43858054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020127022328A Withdrawn KR20120128643A (ko) | 2010-01-28 | 2011-01-28 | 방향성 응고로에서 사용하기 위한 도가니 |
Country Status (7)
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201245474A (en) * | 2011-05-12 | 2012-11-16 | Hon Hai Prec Ind Co Ltd | Evaporation source device and a coating method using the same |
| FR2979638A1 (fr) | 2011-09-05 | 2013-03-08 | Commissariat Energie Atomique | Dispositif de fabrication de materiau cristallin a partir d'un creuset a resistance thermique non uniforme |
| DE102012202589A1 (de) * | 2012-02-21 | 2013-08-22 | Evonik Degussa Gmbh | Einsatz für einen Schmelztiegel |
| CN102808214B (zh) * | 2012-08-30 | 2015-06-10 | 天威新能源控股有限公司 | 一种用于铸锭坩埚的复合式护板 |
| DE102014102980B4 (de) | 2014-03-06 | 2017-12-21 | Ald Vacuum Technologies Gmbh | Hybridtiegel zur Kristallisation von Materialien, Verwendung des Hybridtiegels, Verfahren zur Herstellung von kristallinem Material sowie kristallines Produkt |
| KR20250051162A (ko) | 2020-02-20 | 2025-04-16 | 글로벌웨이퍼스 씨오., 엘티디. | 일체형 도가니 조립체의 형성 방법, 도가니 몰드 및 일체형 도가니 |
| US11326271B2 (en) | 2020-02-20 | 2022-05-10 | Globalwafers Co., Ltd. | Methods for forming a unitized crucible assembly |
| US11377751B2 (en) | 2020-02-20 | 2022-07-05 | Globalwafers Co., Ltd. | Crucible molds |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4015657A (en) * | 1975-09-03 | 1977-04-05 | Dmitry Andreevich Petrov | Device for making single-crystal products |
| US4243471A (en) * | 1978-05-02 | 1981-01-06 | International Business Machines Corporation | Method for directional solidification of silicon |
| US4256530A (en) * | 1978-12-07 | 1981-03-17 | Crystal Systems Inc. | Crystal growing |
| GB2041236A (en) * | 1979-01-18 | 1980-09-10 | Crystal Syst | Method and apparatus for growing crystals |
| GB2084978B (en) * | 1980-09-26 | 1984-07-04 | Crystal Syst | Growing silicon ingots |
| US4764195A (en) * | 1987-05-20 | 1988-08-16 | Corning Glass Works | Method of forming reinforced glass composites |
| DE4022389C2 (de) * | 1990-07-13 | 1995-06-08 | Leybold Ag | Schmelz- und Gießofen |
| DE4236827A1 (de) * | 1992-10-30 | 1994-05-05 | Wacker Chemitronic | Vorrichtung zur Herstellung multikristalliner Halbleiter-Blöcke mit kolumnarer Kristallstruktur |
| JPH11138512A (ja) * | 1997-11-14 | 1999-05-25 | Phoenix:Kk | 箱およびその製造方法並びにその製造装置 |
| US6200385B1 (en) * | 2000-03-20 | 2001-03-13 | Carl Francis Swinehart | Crucible for growing macrocrystals |
| FR2853913B1 (fr) * | 2003-04-17 | 2006-09-29 | Apollon Solar | Creuset pour un dispositif de fabrication d'un bloc de materiau cristallin et procede de fabrication |
| JP2006282495A (ja) * | 2005-03-10 | 2006-10-19 | Kyocera Corp | 鋳型及びこれを用いた多結晶シリコンインゴットの製造方法 |
| FR2895749B1 (fr) * | 2006-01-04 | 2008-05-02 | Apollon Solar Soc Par Actions | Dispositif et procede de fabrication d'un bloc de materiau cristallin |
| EP1811064A1 (fr) * | 2006-01-12 | 2007-07-25 | Vesuvius Crucible Company | Creuset pour le traitement de silicium à l'état fondu |
| WO2007148987A1 (en) * | 2006-06-23 | 2007-12-27 | Rec Scanwafer As | Method and crucible for direct solidification of semiconductor grade multi-crystalline silicon ingots |
| JP2009541193A (ja) * | 2006-06-23 | 2009-11-26 | アール・イー・シー・スキャンウェハー・アー・エス | 半導体級シリコンを生産するための装置および方法 |
| EP2183410A1 (en) * | 2007-07-20 | 2010-05-12 | BP Corporation North America Inc. | Methods and apparatuses for manufacturing cast silicon from seed crystals |
-
2011
- 2011-01-27 US US13/014,932 patent/US20110180229A1/en not_active Abandoned
- 2011-01-28 TW TW100103495A patent/TW201202491A/zh unknown
- 2011-01-28 KR KR1020127022328A patent/KR20120128643A/ko not_active Withdrawn
- 2011-01-28 CN CN2011800077648A patent/CN102741462A/zh active Pending
- 2011-01-28 WO PCT/IB2011/050392 patent/WO2011092659A1/en active Application Filing
- 2011-01-28 JP JP2012550554A patent/JP2013518028A/ja active Pending
- 2011-01-28 EP EP11705697A patent/EP2529043A1/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| CN102741462A (zh) | 2012-10-17 |
| TW201202491A (en) | 2012-01-16 |
| WO2011092659A1 (en) | 2011-08-04 |
| US20110180229A1 (en) | 2011-07-28 |
| EP2529043A1 (en) | 2012-12-05 |
| JP2013518028A (ja) | 2013-05-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20120827 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |