KR20120117817A - 광전자 반도체 소자 - Google Patents

광전자 반도체 소자 Download PDF

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Publication number
KR20120117817A
KR20120117817A KR1020127018022A KR20127018022A KR20120117817A KR 20120117817 A KR20120117817 A KR 20120117817A KR 1020127018022 A KR1020127018022 A KR 1020127018022A KR 20127018022 A KR20127018022 A KR 20127018022A KR 20120117817 A KR20120117817 A KR 20120117817A
Authority
KR
South Korea
Prior art keywords
radiation
semiconductor chip
transducer element
semiconductor device
optoelectronic semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020127018022A
Other languages
English (en)
Korean (ko)
Inventor
게르트루트 크로이터
베른트 바르흐만
크리스터 베르게네크
요한 람헨
미하엘 치츨슈페르거
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오스람 옵토 세미컨덕터스 게엠베하 filed Critical 오스람 옵토 세미컨덕터스 게엠베하
Publication of KR20120117817A publication Critical patent/KR20120117817A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins

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  • Led Device Packages (AREA)
KR1020127018022A 2009-12-11 2010-11-17 광전자 반도체 소자 Ceased KR20120117817A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009058006.9A DE102009058006B4 (de) 2009-12-11 2009-12-11 Optoelektronisches Halbleiterbauteil
DE102009058006.9 2009-12-11

Publications (1)

Publication Number Publication Date
KR20120117817A true KR20120117817A (ko) 2012-10-24

Family

ID=43536571

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127018022A Ceased KR20120117817A (ko) 2009-12-11 2010-11-17 광전자 반도체 소자

Country Status (8)

Country Link
US (1) US9029907B2 (enExample)
EP (1) EP2510558B1 (enExample)
JP (1) JP5863665B2 (enExample)
KR (1) KR20120117817A (enExample)
CN (2) CN105023999B (enExample)
DE (1) DE102009058006B4 (enExample)
TW (1) TWI419377B (enExample)
WO (1) WO2011069791A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010048162A1 (de) 2010-10-11 2012-04-12 Osram Opto Semiconductors Gmbh Konversionsbauteil
DE102012101102A1 (de) 2012-02-10 2013-08-14 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Anordnung mit einer Mehrzahl von derartigen Bauelementen
DE102012113003A1 (de) 2012-12-21 2014-04-03 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
DE202013101400U1 (de) * 2013-04-02 2014-07-03 Zumtobel Lighting Gmbh Anordnung zum Konvertieren des von einer LED-Lichtquelle emittierten Lichts
DE102013220790A1 (de) * 2013-10-15 2015-04-16 Osram Opto Semiconductors Gmbh Herstellung eines optoelektronischen Bauelements
JP2015109337A (ja) * 2013-12-04 2015-06-11 日東電工株式会社 光半導体装置用熱硬化性樹脂組成物およびそれを用いて得られる光半導体装置用リードフレーム、ならびに光半導体装置
WO2015104648A1 (en) * 2014-01-09 2015-07-16 Koninklijke Philips N.V. Light emitting device with reflective sidewall
DE102014114914A1 (de) * 2014-10-14 2016-04-14 Osram Opto Semiconductors Gmbh Herstellung eines optoelektronischen Bauelements
DE102016105988A1 (de) * 2016-04-01 2017-10-05 Osram Opto Semiconductors Gmbh Konverter zur teilweisen Konversion einer Primärstrahlung und lichtemittierendes Bauelement

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3789747B2 (ja) * 2000-11-15 2006-06-28 三洋電機株式会社 発光装置の製造方法
JP2006173271A (ja) * 2004-12-14 2006-06-29 Matsushita Electric Ind Co Ltd 半導体発光装置、照明装置、携帯通信機器、及びカメラ
US7341878B2 (en) 2005-03-14 2008-03-11 Philips Lumileds Lighting Company, Llc Wavelength-converted semiconductor light emitting device
JP2006294925A (ja) 2005-04-12 2006-10-26 Seiko Epson Corp 発光素子、発光素子の製造方法および発光装置
JP2007019096A (ja) * 2005-07-05 2007-01-25 Toyoda Gosei Co Ltd 発光装置及びその製造方法
US20100283074A1 (en) * 2007-10-08 2010-11-11 Kelley Tommie W Light emitting diode with bonded semiconductor wavelength converter
RU2489774C2 (ru) 2007-11-29 2013-08-10 Нития Корпорейшн Светоизлучающее устройство и способ его изготовления
US8049237B2 (en) * 2007-12-28 2011-11-01 Nichia Corporation Light emitting device
JP5224173B2 (ja) 2008-03-07 2013-07-03 スタンレー電気株式会社 半導体発光装置
EP2269239A2 (en) * 2008-03-21 2011-01-05 Koninklijke Philips Electronics N.V. A luminous device
DE102008025159A1 (de) * 2008-05-26 2009-12-10 Osram Opto Semiconductors Gmbh Halbleiterbauelement, Reflexlichtschranke und Verfahren zur Herstellung eines Gehäuses
DE102008025923B4 (de) * 2008-05-30 2020-06-18 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
DE102008050538B4 (de) 2008-06-06 2022-10-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
WO2010035206A1 (en) * 2008-09-25 2010-04-01 Koninklijke Philips Electronics N.V. Coated light emitting device and method for coating thereof
TWM357028U (en) 2009-01-08 2009-05-11 Jmk Optoelectronic Co Ltd Packaging structure for light emitting diode

Also Published As

Publication number Publication date
US9029907B2 (en) 2015-05-12
CN102652369B (zh) 2015-07-01
EP2510558A1 (de) 2012-10-17
US20120299041A1 (en) 2012-11-29
JP2013513934A (ja) 2013-04-22
DE102009058006A1 (de) 2011-06-16
CN102652369A (zh) 2012-08-29
JP5863665B2 (ja) 2016-02-16
TWI419377B (zh) 2013-12-11
EP2510558B1 (de) 2019-06-26
TW201131822A (en) 2011-09-16
WO2011069791A1 (de) 2011-06-16
DE102009058006B4 (de) 2022-03-31
CN105023999A (zh) 2015-11-04
CN105023999B (zh) 2018-07-17

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Patent event date: 20120711

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