TWM357028U - Packaging structure for light emitting diode - Google Patents

Packaging structure for light emitting diode Download PDF

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Publication number
TWM357028U
TWM357028U TW98200261U TW98200261U TWM357028U TW M357028 U TWM357028 U TW M357028U TW 98200261 U TW98200261 U TW 98200261U TW 98200261 U TW98200261 U TW 98200261U TW M357028 U TWM357028 U TW M357028U
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Taiwan
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light
layer
emitting diode
concentrating
increasing
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TW98200261U
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Chinese (zh)
Inventor
de-fang Zhan
you-yuan Huang
jin-yong Liu
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Jmk Optoelectronic Co Ltd
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Priority to TW98200261U priority Critical patent/TWM357028U/en
Publication of TWM357028U publication Critical patent/TWM357028U/en

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M357028 八、新型說明: 【新型所屬之技術領域】 本案為-種發光二極體之峨結構,其係將導電層或電路板 設置在沖壓件之凹射’藉此於導f層或電路板與賴件凹槽壁 面之間之區域形成晶片擺放區,可雜擺放發光二極體元件,並 利用燈杯禮計’增進反射、增光、概及聚光等效果。 【先前技術】 第-圖為習用發光二極體之封裝結構剖面圖,其中包含了底 板11、電路12、侧框13、發光二極體元件u、線路15及螢光層 16。在習用的發光二極體之封震結構中,電路12是直接以印刷 (Pitting)或塗佈(c〇ating)#方式佈於底板n上。發光二極體 (LEDW 14是設置在底板u的中間部份,且發光二極體元件μ 的線路15會連接至底板u上的祕12。在發光二極體元件ΐ4 =一側具有細13,二_框13卿成的區域細會填入勞光 f ’使其在二側侧框13之間形成一層螢光層16,螢光層Μ會覆 蓋住發光二極體元件14。通常,底板11為-種祕材,側框13 為一種鋁材質側框。 驾用的發光二極體之封裝結構,將電路直接印刷或塗佈在底 反 a使得電路佈線等設計受到限制,缺乏彈性。例如:當在 、、°冓中”有夕組紅綠藍(RGB)發光二極體元件時,將會增加電路佈 M357028 線及晶片設置的複雜度。此外,習用的發光二極體之封農結構, 本身並不具備燈杯結構,聚光效果不佳。 習用的技術具有下列缺點: 1. 驾用的發光二極體燈之結構’將電路直接印刷或塗佈在底 板上,使得電路佈線及晶片設置等設計受到限制,缺乏彈 性; 2. 習用的發光二極體之職結構,不具備燈杯結構,因此聚 光效果不佳。 因此,如何改進上述習用的缺點,有效增強發光二極體之聚 光效果’以及提升魏設狀雜,係為本輯者。 【新型内容】 本案々目的在於提出一新穎且進步的發光二極體之封裝結 構,將競二極體元件直接設置在沖壓件及雙層電路板(導電^ 所形成之純嶋之中,錢_不結構之設計,達到彈性曰 放晶片及增進發光二極體元件之發光效果。 " 為達上述目的’本案提出一種發光二極體之封裝結構,其包 一沖壓件,係具一凹槽; 一導電層,係設於細射,並與該凹槽之壁_隔一距離 错此於該導電層與該凹槽壁面之間之區域形成―晶片擺放區; M357028 一發光二極體元件’係設於該晶片擺放區; 其中’該發光二極體元件之線路係連接至該導電層,藉以形 成該發光二極體之封裝結構者。 如所述之發光二極體之封裝結構,其中該導電層係為單層電 路板。 如所述之發光二極體之封裝結構,其中該導電層係為多層電 路板。 如所述之發光二極體之封裝結構,其中該導電層係為一金屬 導線架。 如所述之發光二極體之封裝結構,其中更包含一燈杯,該燈 杯係設於該沖壓件及該晶片擺放區之上。 如所述之發光二極體之封裝結構,其中該燈杯係為單層結構 者’具-反射層’該反射層係可由鏡面、拋光、電鍍、濺錄、反 射用樹酯類等其中一方式形成。 如所述之發光二極體之封裝結構,其中該燈杯係為單層結構 ^ ’具-增光/擴散/聚光層,該增光/擴散/聚光層可由一增光層、 '、政層 t光層以個別或組合的方式加以开》成;同時該增光/ f政/1光層其可以由辨透鏡、樹§旨、玻璃的方式形成;其中該 聚光層可為菲埋爾鏡片(lens),該擴散層可為—擴散片,而該增 光層可為i冒光片;其中,以組合方式形成之該增光/擴散/聚光 更可加上螢光薄膜,其中,該增光/擴散/聚光層之材料更 7 M357028 可採用高穿透率材料加上螢光薄膜的方式形成。 如所述之發光一極體之封裝結構,其中該燈杯係為單層結構 者’具-反射層’該反射層之-凹槽内可填透明膠、s光劑或空 氣。 如所述之發光二極體之封襄結構,其中該燈杯係為複層結構 者’具-反射層’該反射層射由鏡面、減、紐、離、反 射用樹酯類等其中一方式形成。 如所述之發光一極體之封裝結構,其中該燈杯係為複層結構 者’具-增光/擴散/聚光層,該增光/擴散/聚光層可由一增光層、 —擴散層、—縣私_錢合的方式加⑽成;同時該增光/ 擴散/聚光層其可以由光學透鏡、樹酷'玻璃的方式形成;其中該 聚光層可為_爾鏡片(lens),該擴散層可為—擴散片,而該增 光層可為-增光#,其巾’灿合方式形紅該增光/擴散/聚光 '更可加上-螢光薄臈;其中,該增光/擴散/聚光層之材料更 可採用高穿透率材料加上螢光_的方式形成。 如所述之發光一極體之封裝結構,其中該燈杯係為複層結構 者具反射層’該反射層之一凹槽内可填透明膠、螢光劑或空 氣。 斤述之毛光一極體之封聚結構’其中該燈杯係為複層結 ’更可於其上設置-光學透鏡,如菲顆鏡⑽ 到聚光之效要。 8 M357028 【實施方式】 第二圖⑻〜(d)為本案較佳實施例之發光二極體之封裝 及各種變化形式之剖面圖,其中包含一凹槽21、一沖麵:圖 導電層23、晶片擺放區24、複數發光二極體元件四及、-導電層23可為單層電路板或多層電路板。第二_係為對 圖⑻之剔韻’第:陶_為其可能之變化形式。第二、^ 中‘電層23係全埋入晶片擺放區24中之沖壓件&内,: 細内需有對應的凹槽。第二,中,導電層23係—::二 晶片擺放區24中之龍件22内,另一半則凸出來,當然沖壓: 以内需有對應_槽,才能埋人導電層烈。第二嶋中,導電層 23係-凹入晶片擺放區24的底部平面之沖壓件以内,當然沖壓 件22内需有對應的凹槽,才能埋人導電層^。 沖壓件22中具有凹槽21,導電層23即設置在凹槽21之中, 且導電層23與沖壓件22之凹槽21壁面相隔一距離,藉此在兩者 =間之區域形成-晶片擺放區24。晶片擺放區24是用以擺放發光 -極體(LED)⑼25,發光二極體元件25之線路26則連接至導電 層23上。由於晶片擺放區24的階層式設計,可以讓發光二極體 (曰led)晶片的擺放更具彈性,更可搭配不同顏色的發光二極體(led) 曰曰片’產生混光的效果。當然,發光二極體元件可能為晶片、働 封震或其他各種形式。 第三_為本案触實關之發光二極體之雜結構之單層 式燈杯剖_ ’其中包含了—增光/擴散/聚储3卜反射層32 M357028 導电層33。反射層32係可由鏡面、拋光、電鍍、濺鍍、反射 用樹酷轉其巾—方式戦。增光/擴散/聚光層31可由-增光 、。擴放層、一聚光層以個別或組合的方式加以形成;同時該 /擴政光層其可以由光學透鏡、樹醋、玻璃的方式形成; -中亥來麵可為雜爾鏡片(丨㈣,該擴散層可為—擴散片, 而為增光層可為—增光片;其中,以組合方式形成之該增光/擴散 聚光層Μ,更可加上一榮光薄膜;其中,該增光/擴散/聚光層 ^之材料更可細高穿透特料加MS薄朗方式形成。當 然’該反射層32之_凹槽内可填透娜、勞光劑或空氣。 第二圖(b)為本案較佳實施例之發光二極體之封裝結之複層式 燈杯剖面圖,其中包含了—增光/擴散/聚光層3卜反射層32、_ 導電層33及光學透鏡34。同樣地,該反射層32及增光/擴散/聚 光層31的作法可與第王圖⑼的結構相似,而光學透鏡私,如菲 淫爾鏡片(lens) ’則藉以達到聚光之效果。 本案具有下列優點: 1. 本案所提出的發光二鋪之聽結構,魏是設置在階層 2的電路板中,電路板可因應不同的應用選擇採用單層: 多層電路板,因此能令電路佈線等設計更具彈性; 2. 本案所提㈣發光二極體之封賴構,可藉由燈杯結構之 設計增強發光二極體元件之增光、擴散、聚光等效果。 综上所述,本案所提之發光二極體之難結構,透過階層式 M357028 電路板之設計’可增加發光二極體元件擺放的彈性,並大幅提升 發光一極體元件之混光及聚光效果;另一方面,燈杯的特殊設計, 則可增強發光二極體元件之增光、擴散及聚光等效果,進步新穎 且實用,如其變更設計,例如採用不同形狀之燈杯結構、不同燈 杯成型加工製作方式(如CNC銑床),或是設置不同材質之反射層 或增光/擴散/聚光層、或發光二極冑元件以晶片形式或SMD封裝 形式等,只要是利用階層式晶片擺放區者,皆為本案所欲揭露及 保護者。 本案所揭4之技術,得由熟習本技術人士據以實施,而其前 =未有之作法亦具備專概’銳法提出專利之申請。惟上述之 實施例尚不L蓋本案所欲賴之專娜圍,,提出申請 專利範圍如附。 M357028 【圖式簡單說明】 第一圖為習用發光二極體之封裝結構剖面圖; 第二圖(a)〜(e)為本案較佳實施例之發光二極體之封裝結構圖 及各種變化形式之剖面圖; 第三圖(a)為本案較佳實施例之發光二極體之封裝結構之單層 、_ 式燈杯剖面圖; . 第三圖(b)為本案較佳實施例之發光二極體之封裝結構之複層 •式燈杯剖面圖。 【主要元件符號說明】 11底板 12電路 13側框 14發光二極體元件 # 15線路 16螢光層 21凹槽 22沖壓件 23導電層 24晶片擺放區 12 M357028 25發光二極體元件 26線路 31增光/擴散/聚光層 32反射層 33導電層 34光學透鏡M357028 VIII. New description: [New technical field] This case is a kind of 发光 structure of light-emitting diode, which is to place the conductive layer or circuit board on the concave part of the stamping part. A wafer placement area is formed between the area between the wall surface of the groove and the surface of the groove, and the LED component can be placed in a miscellaneous manner, and the effect of the reflection, the addition, the concentrating, and the like can be enhanced by using the lamp cup. [Prior Art] Fig. - is a cross-sectional view of a package structure of a conventional light-emitting diode, which includes a substrate 11, a circuit 12, a side frame 13, a light-emitting diode element u, a line 15, and a phosphor layer 16. In the conventional sealed structure of the light-emitting diode, the circuit 12 is directly placed on the bottom plate n in a Pitting or coating manner. The light-emitting diode (LEDW 14 is disposed in the middle portion of the bottom plate u, and the line 15 of the light-emitting diode element μ is connected to the secret 12 on the bottom plate u. There is a thin 13 on the side of the light-emitting diode element ΐ4 = The area of the second frame 13 is filled with the light light f' to form a phosphor layer 16 between the two side frames 13, and the phosphor layer covers the light emitting diode element 14. Usually, The bottom plate 11 is a kind of secret material, and the side frame 13 is an aluminum side frame. The package structure of the driving light-emitting diode directly prints or coats the circuit at the bottom, so that the design of the circuit wiring is limited, and the flexibility is lacking. For example, when there is a group of red, green and blue (RGB) light-emitting diode components in the ",", the complexity of the circuit board M357028 line and wafer setting will be increased. In addition, the conventional light-emitting diodes The agricultural structure does not have the structure of the lamp cup itself, and the concentrating effect is not good. The conventional technology has the following disadvantages: 1. The structure of the light-emitting diode lamp used to directly print or coat the circuit on the bottom plate, so that The design of circuit wiring and wafer setup is limited and lacks flexibility. The structure of the conventional light-emitting diode does not have the structure of the lamp cup, so the light collecting effect is not good. Therefore, how to improve the disadvantages of the above-mentioned conventional use, effectively enhance the light-collecting effect of the light-emitting diode, and improve the Wei-like shape, The main purpose of this case is to propose a novel and advanced package structure of the light-emitting diode, which is directly arranged on the stamping part and the double-layer circuit board (conducting ^) In the pure enamel, the money _ unstructured design achieves the elastic enamel wafer and enhances the illuminating effect of the illuminating diode component. " For the above purpose, the present invention proposes a package structure of a light-emitting diode, which is stamped. a conductive layer is disposed on the fine film and is formed at a distance from the wall of the groove to form a wafer placement area between the conductive layer and the wall surface of the groove M357028 A light-emitting diode element is disposed in the wafer placement area; wherein the circuit of the light-emitting diode element is connected to the conductive layer, thereby forming a package structure of the light-emitting diode. It a package structure of a light-emitting diode, wherein the conductive layer is a single-layer circuit board, such as the package structure of the light-emitting diode, wherein the conductive layer is a multi-layer circuit board. The package structure, wherein the conductive layer is a metal lead frame. The package structure of the light-emitting diode, further comprising a light cup, the light cup is disposed on the stamping part and the wafer placement area The package structure of the light-emitting diode, wherein the light cup is a single-layer structure, the reflective layer can be mirror-finished, polished, plated, smeared, reflected, etc. The package structure of the light-emitting diode, wherein the lamp cup is a single-layer structure, a light-increasing/diffusing/concentrating layer, and the light-increasing/diffusing/concentrating layer may be a light-increasing layer. ', the political t-light layer is opened in a single or combined manner"; at the same time, the light-increasing/f-political/1 light layer can be formed by a lens, a tree, or a glass; wherein the light-concentrating layer can be a Philippine lens, the diffusion layer can be a diffusion sheet, and the The light-increasing layer may be a light-emitting sheet; wherein the light-increasing/diffusing/concentrating light formed in combination may be further added with a fluorescent film, wherein the material of the light-increasing/diffusing/concentrating layer is further high in the M M757028 The permeability material is formed by adding a fluorescent film. The package structure of the light-emitting diode according to the above, wherein the lamp cup is a single-layer structure of a reflective layer, and the groove may be filled with a transparent glue, a sizing agent or air. The sealing structure of the light-emitting diode according to the above, wherein the lamp cup is a multi-layer structure of a 'reflective layer', and the reflective layer is irradiated by a mirror, a subtractive, a new, an off, a reflective resin, and the like. The way is formed. The package structure of the light-emitting diode, wherein the light cup is a multi-layer structure, a light-increasing/diffusing/concentrating layer, and the light-increasing/diffusing/concentrating layer may be a light-increasing layer, a diffusion layer, - county private _ money combination plus (10) into; at the same time the brightness / diffusion / concentrating layer can be formed by optical lens, tree cool 'glass; wherein the concentrating layer can be len lens, The diffusion layer may be a diffusion sheet, and the brightness enhancement layer may be a --enhancement #, and the towel 'can't form a red color, the light enhancement/diffusion/concentration' may be added with a fluorescent thin film; wherein the light enhancement/diffusion The material of the concentrating layer can be formed by using a high transmittance material and a fluorescent ray. The package structure of the light-emitting diode according to the above, wherein the light cup is a multi-layer structure with a reflective layer. One of the reflective layers may be filled with a transparent glue, a fluorescent agent or air. The sealing structure of the hair-light body is described in the above, where the lamp cup is a multi-layered knot, and an optical lens, such as a phenanthrene mirror (10), can be disposed on the concentrating effect. 8 M357028 [Embodiment] The second embodiment (8)-(d) is a cross-sectional view of a package and various variations of the light-emitting diode of the preferred embodiment of the present invention, including a recess 21 and a punch surface: a conductive layer 23 The wafer placement area 24, the plurality of light emitting diode elements four, and the conductive layer 23 may be a single layer circuit board or a multilayer circuit board. The second _ is the tune of the figure (8) 'the: Tao _ is its possible variation. In the second, the "electric layer 23 is fully embedded in the stamping part & in the wafer placement area 24, the corresponding recess is required in the thin. Secondly, the conductive layer 23 is: -: the inside of the dragon member 22 in the two wafer placement area 24, and the other half is convex. Of course, the stamping: the corresponding need for the inner groove to embed the conductive layer. In the second stack, the conductive layer 23 is recessed into the stamping of the bottom plane of the wafer placement area 24, and of course, a corresponding recess is required in the stamping member 22 to embed the conductive layer. The stamping member 22 has a recess 21 therein, and the conductive layer 23 is disposed in the recess 21, and the conductive layer 23 is spaced apart from the wall surface of the recess 21 of the stamping member 22, thereby forming a wafer in a region between the two. Place area 24. The wafer placement area 24 is for placing a light-emitting body (LED) (9) 25, and the line 26 of the light-emitting diode element 25 is connected to the conductive layer 23. Due to the hierarchical design of the wafer placement area 24, the arrangement of the LEDs can be made more flexible, and the LEDs of different colors can be combined to produce a mixed light. effect. Of course, the light-emitting diode elements may be in the form of wafers, dams, or other various forms. The third _ single-layer lamp cup section _ ′ of the hybrid structure of the light-emitting diode of the present invention includes a light-increasing/diffusion/polymerization 3-reflecting layer 32 M357028 conductive layer 33. The reflective layer 32 can be mirror-finished, polished, plated, sputtered, and reflective. The dimming/diffusion/concentrating layer 31 can be -enluminated. The expansion layer and the light concentrating layer are formed in an individual or combined manner; at the same time, the/expansion light layer can be formed by an optical lens, a tree vinegar, or a glass; - the Zhonghailai surface can be a hybrid lens (丨(四) The diffusion layer may be a diffusion sheet, and the light enhancement layer may be a light enhancement sheet; wherein the light enhancement/diffusion concentrating layer formed in combination may be further provided with a glory film; wherein the light enhancement/diffusion The material of the concentrating layer can be formed by the fine material and the MS thinning method. Of course, the groove of the reflecting layer 32 can be filled with varnish, light agent or air. The second figure (b) The cross-sectional view of the multi-layered lamp cup of the package of the light-emitting diode of the preferred embodiment of the present invention includes a light-increasing/diffusion/concentrating layer 3, a reflective layer 32, a conductive layer 33 and an optical lens 34. The reflection layer 32 and the light-increasing/diffusing/concentrating layer 31 can be similar to the structure of the king figure (9), and the optical lens is private, such as the lens, to achieve the effect of collecting light. It has the following advantages: 1. The structure of the illuminating two shop proposed in this case, Wei is set in the hierarchy In the circuit board of 2, the circuit board can be selected according to different applications: a multi-layer circuit board, so that the design of the circuit wiring and the like can be more flexible; 2. (4) The structure of the light-emitting diode can be borrowed The design of the lamp cup structure enhances the effects of light-increasing, diffusing, and concentrating the light-emitting diode components. In summary, the difficult structure of the light-emitting diode proposed in the present case can be increased through the design of the hierarchical M357028 circuit board. The elasticity of the LED components is greatly increased, and the light mixing and concentrating effects of the LED elements are greatly improved; on the other hand, the special design of the lamp cup enhances the brightness, diffusion and aggregation of the LED components. Light effects, such as new and practical, such as changing the design, such as the use of different shapes of the lamp cup structure, different lamp cup forming processing methods (such as CNC milling machine), or set different materials of reflective layer or add / diffuse / concentrating The layer or the light-emitting diode device is in the form of a wafer or an SMD package, and as long as it is a layered wafer placement area, it is intended to be disclosed and protected by the present invention. It is implemented by a person familiar with the technology, and the former = not existing practice also has a special application for the patent application of Sharp Law. However, the above-mentioned examples are not covered by the special case of the case. The scope of the patent is attached. M357028 [Simple description of the drawings] The first figure is a sectional view of the package structure of the conventional light-emitting diode; the second figure (a) to (e) is the package of the light-emitting diode of the preferred embodiment of the present invention. A cross-sectional view of the structure and various variations; the third figure (a) is a sectional view of a single-layer, _-type lamp cup of the package structure of the light-emitting diode of the preferred embodiment of the present invention; A cross-sectional view of a multi-layer lamp cup of a package structure of a preferred embodiment of the present invention. [Description of main component symbols] 11 bottom plate 12 circuit 13 side frame 14 light emitting diode element #15 line 16 fluorescent layer 21 concave Slot 22 Stamping 23 Conductive Layer 24 Wafer Placement Area 12 M357028 25 Light Emitting Diode Element 26 Line 31 Brightening/Diffusion/Concentrating Layer 32 Reflecting Layer 33 Conducting Layer 34 Optical Lens

Claims (1)

M357028 九、申請專利範圍: 1. 一種發光二極體之封裝結構,其包含: —沖壓件,係具一凹槽; —導電層,係設於該凹槽中,並與該凹槽之壁面相隔—距離,藉 ' 此於該導電層與該凹槽壁面之間之區域形成-晶片擺放區; 1 —發光二極體元件,係設於該晶片擺放區; 其中’轉光二極體元件之線路係連接至該導電層,藉以形成該 發光二極體之封裝結構者。 2·如申請專利範圍第1項所述之發光二極體之封裝結構,其中該 導電層係為單層電路板。 % 3·如申請專利範圍第1項所述之發光二極體之封裝結構,其中該 導電層係為多層電路板。 4·如申請專利範圍第1項所述之發光二極體之封裝結構,其中該 導電層係為一金屬導線架。 ’如申請專利範圍第1項所述之發光二極體之封裝結構,其中更 包含一燈杯’該燈杯係設於該沖壓件及該晶片擺放區之上。 14 M357028 6.如申凊專利範圍第$項 燈杯係為單層結構者,1 光二極體之封裝結構’其中該 "反射層,該反射層係可由鏡面、拋光、 電鐘、雜、咖__射-方式形成。 燈圍第5項所述之發光二極體之封裝結構,其中該 二:二構者,具—增光/擴散/聚光層,該增光/擴散/聚 、、:_7光層、1散層、1光層以侧雜合的方式加 乂y、,、同日擁曾光/擴散/聚光層其可以由光學透鏡、樹醋、玻 璃的方式域,其巾該聚光層可H關鏡片(lens),該擴散層 可為擴散片’而简光層可為—增光片;其巾,以組合方式形 成^該增光/擴散/聚光層,更可加上一榮光薄膜;其中,該增光/ 擴散/聚光層之材料更可採用高穿透率材料加上t光薄膜的方式 形成。 8. 如申請專利範圍第5項所述之發光二極體之封裝結構,其中該 燈杯係為單層結構者,具—反㈣,該反射層之1槽内可填透 明膠、螢光劑或空氣。 9. 如申請專利範圍第5項所述之發光二極體之封裝結構,其中該 燈杯係為複層結構者,具—反㈣,該反射層係可由鏡面、抛光、 15 M357028 電鍍、濺鍍、反射用樹酯類等其中一方式形成。 10. 如申請專利範圍第5項所述之發光二極體之封裝結構,其中該 燈杯係為複層結構者,具一增光/擴散/聚光層,該增光/擴散/聚 光層可由一增光層、一擴散層、—聚光層以個別或組合的方式加 、. 以形成;同時該增光/擴散/聚光層其可以由光學透鏡、樹酯、坡 …翻方式形成;其中該聚光層可為菲淫爾鏡片(lens),該擴散層 • 可為一擴散片,而該增光層可為-增光片;其中,以組合方式二 成之該增光/擴散/聚光層,更可加上一榮光細;其中,該增光/ 擴散/聚光層之材料更可採用高穿透率材料加上螢光薄膜的方式 形成。 11. 如申請專利範圍第5項所述之發光二極體之封裝結構,其 燈杯係為複層結構者,具—反騎,該反射層之1槽内可、: 鑄明膠、榮光劑或空氣。 、 12. 如申明專利乾圍第5項所述之發光二極體之封裝結構,上 •燈杯係為複層結構’更可於其上設置-光學透鏡,如菲、X (lens),藉以達到聚光之效果。 /…兄片 16M357028 IX. Patent application scope: 1. A package structure of a light-emitting diode, comprising: a stamping member, a recessed portion; a conductive layer disposed in the recess and facing the wall of the recess Separately-distance, by the region between the conductive layer and the wall surface of the groove forming a wafer placement area; 1 - a light emitting diode element is disposed in the wafer placement area; wherein the 'lighting diode' The circuit of the component is connected to the conductive layer to form a package structure of the light emitting diode. 2. The package structure of the light-emitting diode according to claim 1, wherein the conductive layer is a single-layer circuit board. The package structure of the light-emitting diode according to claim 1, wherein the conductive layer is a multilayer circuit board. 4. The package structure of the light-emitting diode according to claim 1, wherein the conductive layer is a metal lead frame. The package structure of the light-emitting diode according to claim 1, further comprising a light cup, wherein the light cup is disposed on the stamping member and the wafer placement area. 14 M357028 6. If the scope of the patent scope is the single-layer structure, the package structure of the 1-light diode is 'the reflective layer, which can be mirrored, polished, electric clock, miscellaneous, Coffee __ shoot - way to form. The package structure of the light-emitting diode according to Item 5, wherein the two: two-constructor has a light-increasing/diffusing/concentrating layer, the light-increasing/diffusion/polymerization,: _7 light layer, and one layer 1 light layer is added to the side by means of side hybridization, and the same day has a light/diffusion/concentrating layer which can be made up of optical lens, tree vinegar, glass, and the concentrating layer can be closed. (lens), the diffusion layer may be a diffusion sheet' and the simple light layer may be a light-increasing sheet; the towel may be combined to form the light-increasing/diffusing/concentrating layer, and a glory film may be added; The material of the light-increasing/diffusion/concentrating layer can be formed by using a high-transmittance material plus a t-light film. 8. The package structure of the light-emitting diode according to claim 5, wherein the lamp cup is a single-layer structure, and has a reverse (four), and the groove of the reflective layer can be filled with transparent glue and fluorescent light. Agent or air. 9. The package structure of the light-emitting diode according to claim 5, wherein the lamp cup is a multi-layer structure, and the reflector layer is mirror-polished, polished, 15 M357028 plated, splashed. It is formed by one of plating, reflection, and the like. 10. The package structure of the light-emitting diode according to claim 5, wherein the lamp cup is a multi-layer structure having a light-increasing/diffusing/concentrating layer, and the light-increasing/diffusing/concentrating layer may be a light-increasing layer, a diffusion layer, a light-concentrating layer are added in an individual or combined manner to form; and the light-increasing/diffusing/concentrating layer may be formed by an optical lens, a resin, or a tilting method; The concentrating layer may be a lens, the diffusion layer may be a diffusion sheet, and the brightness enhancement layer may be a light-increasing sheet; wherein the light-increasing/diffusing/concentrating layer is combined in two ways, Further, a glory light can be added; wherein the material of the light-increasing/diffusing/concentrating layer can be formed by using a high-transmittance material and a fluorescent film. 11. The package structure of the light-emitting diode according to claim 5, wherein the lamp cup is a multi-layer structure, and the anti-riding, the reflective layer of the reflective layer can be: cast gelatin, glory agent Or air. 12. The packaging structure of the light-emitting diode according to item 5 of the patented circumference, the upper lamp cup is a multi-layer structure, and the optical lens, such as Philippine and X (lens), can be disposed thereon. In order to achieve the effect of concentrating light. /... Brother 16
TW98200261U 2009-01-08 2009-01-08 Packaging structure for light emitting diode TWM357028U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI416767B (en) * 2009-06-03 2013-11-21 Kwo Ger Metal Technology Inc LED luminous module process method
TWI419377B (en) * 2009-12-11 2013-12-11 Osram Opto Semiconductors Gmbh Opto-electronic semiconductor component

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI416767B (en) * 2009-06-03 2013-11-21 Kwo Ger Metal Technology Inc LED luminous module process method
TWI419377B (en) * 2009-12-11 2013-12-11 Osram Opto Semiconductors Gmbh Opto-electronic semiconductor component
US9029907B2 (en) 2009-12-11 2015-05-12 Osram Opto Semiconductor Gmbh Optoelectronic semiconductor component

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