JP5863665B2 - オプトエレクトロニクス半導体部品 - Google Patents

オプトエレクトロニクス半導体部品 Download PDF

Info

Publication number
JP5863665B2
JP5863665B2 JP2012542430A JP2012542430A JP5863665B2 JP 5863665 B2 JP5863665 B2 JP 5863665B2 JP 2012542430 A JP2012542430 A JP 2012542430A JP 2012542430 A JP2012542430 A JP 2012542430A JP 5863665 B2 JP5863665 B2 JP 5863665B2
Authority
JP
Japan
Prior art keywords
conversion element
radiation
semiconductor chip
sealing body
reflective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012542430A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013513934A5 (enExample
JP2013513934A (ja
Inventor
ゲルトルート クラウター
ゲルトルート クラウター
ベルント バーチマン
ベルント バーチマン
クリスター ベルゲネク
クリスター ベルゲネク
ミヒャエル ツィッツルスペルガー
ミヒャエル ツィッツルスペルガー
ヨハン ランチェン
ヨハン ランチェン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of JP2013513934A publication Critical patent/JP2013513934A/ja
Publication of JP2013513934A5 publication Critical patent/JP2013513934A5/ja
Application granted granted Critical
Publication of JP5863665B2 publication Critical patent/JP5863665B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins

Landscapes

  • Led Device Packages (AREA)
JP2012542430A 2009-12-11 2010-11-17 オプトエレクトロニクス半導体部品 Active JP5863665B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009058006.9A DE102009058006B4 (de) 2009-12-11 2009-12-11 Optoelektronisches Halbleiterbauteil
DE102009058006.9 2009-12-11
PCT/EP2010/067707 WO2011069791A1 (de) 2009-12-11 2010-11-17 Optoelektronisches halbleiterbauteil

Publications (3)

Publication Number Publication Date
JP2013513934A JP2013513934A (ja) 2013-04-22
JP2013513934A5 JP2013513934A5 (enExample) 2013-12-12
JP5863665B2 true JP5863665B2 (ja) 2016-02-16

Family

ID=43536571

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012542430A Active JP5863665B2 (ja) 2009-12-11 2010-11-17 オプトエレクトロニクス半導体部品

Country Status (8)

Country Link
US (1) US9029907B2 (enExample)
EP (1) EP2510558B1 (enExample)
JP (1) JP5863665B2 (enExample)
KR (1) KR20120117817A (enExample)
CN (2) CN105023999B (enExample)
DE (1) DE102009058006B4 (enExample)
TW (1) TWI419377B (enExample)
WO (1) WO2011069791A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010048162A1 (de) 2010-10-11 2012-04-12 Osram Opto Semiconductors Gmbh Konversionsbauteil
DE102012101102A1 (de) 2012-02-10 2013-08-14 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Anordnung mit einer Mehrzahl von derartigen Bauelementen
DE102012113003A1 (de) 2012-12-21 2014-04-03 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
DE202013101400U1 (de) * 2013-04-02 2014-07-03 Zumtobel Lighting Gmbh Anordnung zum Konvertieren des von einer LED-Lichtquelle emittierten Lichts
DE102013220790A1 (de) * 2013-10-15 2015-04-16 Osram Opto Semiconductors Gmbh Herstellung eines optoelektronischen Bauelements
JP2015109337A (ja) * 2013-12-04 2015-06-11 日東電工株式会社 光半導体装置用熱硬化性樹脂組成物およびそれを用いて得られる光半導体装置用リードフレーム、ならびに光半導体装置
WO2015104648A1 (en) * 2014-01-09 2015-07-16 Koninklijke Philips N.V. Light emitting device with reflective sidewall
DE102014114914A1 (de) * 2014-10-14 2016-04-14 Osram Opto Semiconductors Gmbh Herstellung eines optoelektronischen Bauelements
DE102016105988A1 (de) * 2016-04-01 2017-10-05 Osram Opto Semiconductors Gmbh Konverter zur teilweisen Konversion einer Primärstrahlung und lichtemittierendes Bauelement

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3789747B2 (ja) * 2000-11-15 2006-06-28 三洋電機株式会社 発光装置の製造方法
JP2006173271A (ja) * 2004-12-14 2006-06-29 Matsushita Electric Ind Co Ltd 半導体発光装置、照明装置、携帯通信機器、及びカメラ
US7341878B2 (en) 2005-03-14 2008-03-11 Philips Lumileds Lighting Company, Llc Wavelength-converted semiconductor light emitting device
JP2006294925A (ja) 2005-04-12 2006-10-26 Seiko Epson Corp 発光素子、発光素子の製造方法および発光装置
JP2007019096A (ja) * 2005-07-05 2007-01-25 Toyoda Gosei Co Ltd 発光装置及びその製造方法
US20100283074A1 (en) * 2007-10-08 2010-11-11 Kelley Tommie W Light emitting diode with bonded semiconductor wavelength converter
RU2489774C2 (ru) 2007-11-29 2013-08-10 Нития Корпорейшн Светоизлучающее устройство и способ его изготовления
US8049237B2 (en) * 2007-12-28 2011-11-01 Nichia Corporation Light emitting device
JP5224173B2 (ja) 2008-03-07 2013-07-03 スタンレー電気株式会社 半導体発光装置
EP2269239A2 (en) * 2008-03-21 2011-01-05 Koninklijke Philips Electronics N.V. A luminous device
DE102008025159A1 (de) * 2008-05-26 2009-12-10 Osram Opto Semiconductors Gmbh Halbleiterbauelement, Reflexlichtschranke und Verfahren zur Herstellung eines Gehäuses
DE102008025923B4 (de) * 2008-05-30 2020-06-18 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
DE102008050538B4 (de) 2008-06-06 2022-10-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
WO2010035206A1 (en) * 2008-09-25 2010-04-01 Koninklijke Philips Electronics N.V. Coated light emitting device and method for coating thereof
TWM357028U (en) 2009-01-08 2009-05-11 Jmk Optoelectronic Co Ltd Packaging structure for light emitting diode

Also Published As

Publication number Publication date
US9029907B2 (en) 2015-05-12
KR20120117817A (ko) 2012-10-24
CN102652369B (zh) 2015-07-01
EP2510558A1 (de) 2012-10-17
US20120299041A1 (en) 2012-11-29
JP2013513934A (ja) 2013-04-22
DE102009058006A1 (de) 2011-06-16
CN102652369A (zh) 2012-08-29
TWI419377B (zh) 2013-12-11
EP2510558B1 (de) 2019-06-26
TW201131822A (en) 2011-09-16
WO2011069791A1 (de) 2011-06-16
DE102009058006B4 (de) 2022-03-31
CN105023999A (zh) 2015-11-04
CN105023999B (zh) 2018-07-17

Similar Documents

Publication Publication Date Title
JP5863665B2 (ja) オプトエレクトロニクス半導体部品
CN102460745B (zh) 光电子半导体器件
TWI692127B (zh) 發光元件及其製作方法
TWI528602B (zh) 具有遠端磷光層及反射子基板的發光二極體
US8723201B2 (en) Light-emitting devices with substrate coated with optically denser material
US9164354B2 (en) Conversion component
KR102184381B1 (ko) 자외선 발광 다이오드를 이용한 발광 소자 및 이를 포함하는 조명장치
JP5542820B2 (ja) オプトエレクトロニクス部品
US20080079015A1 (en) Optoelectronic component having a luminescence conversion layer
US9385258B2 (en) Optoelectronic semiconductor device with protective and reflective sheaths
JP2009510744A (ja) 放射放出オプトエレクトロニクス素子
RU2010126475A (ru) Светоизлучающее устройство и способ его изготовления
JP2002033517A (ja) 発光素子とその製造方法
JP2009518874A5 (enExample)
WO2013018279A1 (ja) 光波長変換ユニット
KR20100109561A (ko) 광전 모듈 및 광전 모듈을 포함한 프로젝션 장치
CN105981187A (zh) 光电组件
JP2013513934A5 (enExample)
JP7053252B2 (ja) 半導体発光装置
CN102142501A (zh) 一种led封装结构
CN106688096B (zh) 光电子构件
US8461609B2 (en) Light emitting device package
US10879424B2 (en) Radiation-emitting semiconductor chip, optoelectronic component comprising a radiation-emitting semiconductor chip, and method of coating a radiation-emitting semiconductor chip
JP2015082657A (ja) 発光ダイオードパッケージ
US12009460B2 (en) Method for producing a conversion element, and conversion element

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131022

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20131022

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140327

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140408

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140624

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140701

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141008

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20141224

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20150316

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150622

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150804

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20151030

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20151201

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20151222

R150 Certificate of patent or registration of utility model

Ref document number: 5863665

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250