JP5863665B2 - オプトエレクトロニクス半導体部品 - Google Patents
オプトエレクトロニクス半導体部品 Download PDFInfo
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- JP5863665B2 JP5863665B2 JP2012542430A JP2012542430A JP5863665B2 JP 5863665 B2 JP5863665 B2 JP 5863665B2 JP 2012542430 A JP2012542430 A JP 2012542430A JP 2012542430 A JP2012542430 A JP 2012542430A JP 5863665 B2 JP5863665 B2 JP 5863665B2
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- 239000004065 semiconductor Substances 0.000 title claims description 142
- 230000005693 optoelectronics Effects 0.000 title claims description 32
- 238000006243 chemical reaction Methods 0.000 claims description 117
- 230000005855 radiation Effects 0.000 claims description 80
- 238000007789 sealing Methods 0.000 claims description 45
- 230000005670 electromagnetic radiation Effects 0.000 claims description 36
- 239000008393 encapsulating agent Substances 0.000 claims description 36
- 239000012790 adhesive layer Substances 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 25
- 238000000605 extraction Methods 0.000 claims description 23
- 239000002245 particle Substances 0.000 claims description 16
- 229920001296 polysiloxane Polymers 0.000 claims description 13
- 150000002118 epoxides Chemical class 0.000 claims description 7
- -1 BaSO 4 Inorganic materials 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 239000010410 layer Substances 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910010293 ceramic material Inorganic materials 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 description 6
- 238000004382 potting Methods 0.000 description 6
- 238000004020 luminiscence type Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007751 thermal spraying Methods 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Description
本特許出願は、独国特許出願第102009058006.9号の優先権を主張し、この文書の開示内容は参照によって本出願に組み込まれている。
Claims (9)
- オプトエレクトロニクス半導体部品(100)であって、
− 放射取り出し領域(6)を有する半導体チップ(3)であり、生成される電磁放射の少なくとも一部分が、前記放射取り出し領域(6)を通じて前記半導体チップ(3)から出る、少なくとも1つの放射放出半導体チップ(3)と、
− 前記半導体チップ(3)の下流、前記放射取り出し領域(6)に配置されており、前記半導体チップ(3)によって放出される前記電磁放射を変換し、前記放射取り出し領域(6)とは反対側の第1の面(7)を有する、少なくとも1つの変換要素(4)と、
− 反射性の封止体(5)と、
を備えており、
− 前記反射性の封止体(5)が、側面(33,44)において、前記半導体チップ(3)と、前記変換要素(4)の少なくとも一部分とを、密着状態に封止しており、
− 前記変換要素(4)の前記第1の面(7)に前記反射性の封止体(5)が存在せず、
− 前記変換要素(4)の前記第1の面(7)が、少なくとも部分的に構造化されており、
− 前記側面領域(33,44)に垂直な方向における前記反射性の封止体(5)の大きさが、1000μmより大きく、
− 前記変換要素(4)が、前記反射性の封止体(5)から突き出ており、
− 前記半導体チップ(3)が、部品のキャリア(1000)に面するように配置されており、
− 前記部品のキャリア(1000)が、その表面の少なくとも一部分に金層または銀層が形成されている金属性のキャリアフレームであり、
− 前記反射性の封止体(5)が、前記半導体チップ(3)によって覆われていない前記キャリア(1000)の領域(1111)を覆っている、
オプトエレクトロニクス半導体部品(100)。 - 前記変換要素(4)がセラミック材料によって形成されている、
請求項1に記載のオプトエレクトロニクス半導体部品(100)。 - 前記変換要素(4)が、前記半導体チップ(3)の垂直方向における厚さのオーダーの少なくとも2倍の、垂直方向における厚さを有する、
請求項1または請求項2に記載のオプトエレクトロニクス半導体部品(100)。 - 前記変換要素(4)が、少なくとも50μmから最大で500μmの、垂直方向における厚さを有する、
請求項1から請求項3のいずれかに記載のオプトエレクトロニクス半導体部品(100)。 - 前記変換要素(4)から放出される前記電磁放射のうちの少なくとも10%が、前記変換要素(4)の前記側面領域(44)において放出され、前記反射性の封止体(5)によって反射される、
請求項1から請求項4のいずれかに記載のオプトエレクトロニクス半導体部品(100)。 - 前記半導体チップ(3)と前記変換要素(4)との間に、放射に対して透過性の接着層(8)が配置されている、
請求項1から請求項5のいずれかに記載のオプトエレクトロニクス半導体部品(100)。 - 前記反射性の封止体(5)が、前記半導体チップ(3)の前記側面領域(33)と、前記接着層(8)の側面領域(88)とを完全に覆っている、
請求項6に記載のオプトエレクトロニクス半導体部品(100)。 - 前記反射性の封止体(5)が、シリコーン、シリコーンの混合物、またはエポキシドによって形成されており、このような材料に、放射を反射する粒子が導入されており、放射を反射する前記粒子が、材料TiO2、BaSO4、ZnO、AlxOy、ZrO2のうちの少なくとも1種類からなる、またはこれらの材料のうちの1種類を含んでいる、
請求項1から請求項7のいずれかに記載のオプトエレクトロニクス半導体部品(100)。 - 前記反射性の封止体(5)は、白色に見えるものである、
請求項1から請求項8のいずれかに記載のオプトエレクトロニクス半導体部品(100)。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102009058006.9A DE102009058006B4 (de) | 2009-12-11 | 2009-12-11 | Optoelektronisches Halbleiterbauteil |
DE102009058006.9 | 2009-12-11 | ||
PCT/EP2010/067707 WO2011069791A1 (de) | 2009-12-11 | 2010-11-17 | Optoelektronisches halbleiterbauteil |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013513934A JP2013513934A (ja) | 2013-04-22 |
JP2013513934A5 JP2013513934A5 (ja) | 2013-12-12 |
JP5863665B2 true JP5863665B2 (ja) | 2016-02-16 |
Family
ID=43536571
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012542430A Active JP5863665B2 (ja) | 2009-12-11 | 2010-11-17 | オプトエレクトロニクス半導体部品 |
Country Status (8)
Country | Link |
---|---|
US (1) | US9029907B2 (ja) |
EP (1) | EP2510558B1 (ja) |
JP (1) | JP5863665B2 (ja) |
KR (1) | KR20120117817A (ja) |
CN (2) | CN102652369B (ja) |
DE (1) | DE102009058006B4 (ja) |
TW (1) | TWI419377B (ja) |
WO (1) | WO2011069791A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102010048162A1 (de) | 2010-10-11 | 2012-04-12 | Osram Opto Semiconductors Gmbh | Konversionsbauteil |
DE102012101102A1 (de) | 2012-02-10 | 2013-08-14 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Anordnung mit einer Mehrzahl von derartigen Bauelementen |
DE102012113003A1 (de) | 2012-12-21 | 2014-04-03 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil |
DE202013101400U1 (de) * | 2013-04-02 | 2014-07-03 | Zumtobel Lighting Gmbh | Anordnung zum Konvertieren des von einer LED-Lichtquelle emittierten Lichts |
DE102013220790A1 (de) * | 2013-10-15 | 2015-04-16 | Osram Opto Semiconductors Gmbh | Herstellung eines optoelektronischen Bauelements |
JP2015109337A (ja) * | 2013-12-04 | 2015-06-11 | 日東電工株式会社 | 光半導体装置用熱硬化性樹脂組成物およびそれを用いて得られる光半導体装置用リードフレーム、ならびに光半導体装置 |
EP3092664B1 (en) * | 2014-01-09 | 2019-08-14 | Lumileds Holding B.V. | Light emitting device with reflective sidewall |
DE102014114914A1 (de) * | 2014-10-14 | 2016-04-14 | Osram Opto Semiconductors Gmbh | Herstellung eines optoelektronischen Bauelements |
DE102016105988A1 (de) * | 2016-04-01 | 2017-10-05 | Osram Opto Semiconductors Gmbh | Konverter zur teilweisen Konversion einer Primärstrahlung und lichtemittierendes Bauelement |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3789747B2 (ja) * | 2000-11-15 | 2006-06-28 | 三洋電機株式会社 | 発光装置の製造方法 |
JP2006173271A (ja) * | 2004-12-14 | 2006-06-29 | Matsushita Electric Ind Co Ltd | 半導体発光装置、照明装置、携帯通信機器、及びカメラ |
US7341878B2 (en) * | 2005-03-14 | 2008-03-11 | Philips Lumileds Lighting Company, Llc | Wavelength-converted semiconductor light emitting device |
JP2006294925A (ja) * | 2005-04-12 | 2006-10-26 | Seiko Epson Corp | 発光素子、発光素子の製造方法および発光装置 |
JP2007019096A (ja) * | 2005-07-05 | 2007-01-25 | Toyoda Gosei Co Ltd | 発光装置及びその製造方法 |
EP2206164A2 (en) | 2007-10-08 | 2010-07-14 | 3M Innovative Properties Company | Light emitting diode with bonded semiconductor wavelength converter |
US9024340B2 (en) | 2007-11-29 | 2015-05-05 | Nichia Corporation | Light emitting apparatus and method for producing the same |
US8049237B2 (en) | 2007-12-28 | 2011-11-01 | Nichia Corporation | Light emitting device |
JP5224173B2 (ja) | 2008-03-07 | 2013-07-03 | スタンレー電気株式会社 | 半導体発光装置 |
KR20100127286A (ko) * | 2008-03-21 | 2010-12-03 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 발광 장치 |
DE102008025159A1 (de) * | 2008-05-26 | 2009-12-10 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement, Reflexlichtschranke und Verfahren zur Herstellung eines Gehäuses |
DE102008025923B4 (de) | 2008-05-30 | 2020-06-18 | Osram Opto Semiconductors Gmbh | Strahlungsemittierende Vorrichtung |
DE102008050538B4 (de) * | 2008-06-06 | 2022-10-06 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement und Verfahren zu dessen Herstellung |
JP5779097B2 (ja) | 2008-09-25 | 2015-09-16 | コーニンクレッカ フィリップス エヌ ヴェ | コーティングされた発光デバイス及び発光デバイスをコーティングする方法 |
TWM357028U (en) | 2009-01-08 | 2009-05-11 | Jmk Optoelectronic Co Ltd | Packaging structure for light emitting diode |
-
2009
- 2009-12-11 DE DE102009058006.9A patent/DE102009058006B4/de active Active
-
2010
- 2010-11-17 JP JP2012542430A patent/JP5863665B2/ja active Active
- 2010-11-17 CN CN201080056260.0A patent/CN102652369B/zh active Active
- 2010-11-17 EP EP10788035.3A patent/EP2510558B1/de active Active
- 2010-11-17 KR KR1020127018022A patent/KR20120117817A/ko not_active Application Discontinuation
- 2010-11-17 CN CN201510315781.8A patent/CN105023999B/zh active Active
- 2010-11-17 US US13/515,256 patent/US9029907B2/en active Active
- 2010-11-17 WO PCT/EP2010/067707 patent/WO2011069791A1/de active Application Filing
- 2010-12-08 TW TW099142775A patent/TWI419377B/zh active
Also Published As
Publication number | Publication date |
---|---|
CN102652369A (zh) | 2012-08-29 |
CN105023999A (zh) | 2015-11-04 |
EP2510558B1 (de) | 2019-06-26 |
CN102652369B (zh) | 2015-07-01 |
EP2510558A1 (de) | 2012-10-17 |
KR20120117817A (ko) | 2012-10-24 |
US9029907B2 (en) | 2015-05-12 |
CN105023999B (zh) | 2018-07-17 |
JP2013513934A (ja) | 2013-04-22 |
TW201131822A (en) | 2011-09-16 |
DE102009058006A1 (de) | 2011-06-16 |
DE102009058006B4 (de) | 2022-03-31 |
WO2011069791A1 (de) | 2011-06-16 |
TWI419377B (zh) | 2013-12-11 |
US20120299041A1 (en) | 2012-11-29 |
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