KR20120046177A - 압전 세라믹체를 제조하는 방법 - Google Patents

압전 세라믹체를 제조하는 방법 Download PDF

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Publication number
KR20120046177A
KR20120046177A KR1020127001356A KR20127001356A KR20120046177A KR 20120046177 A KR20120046177 A KR 20120046177A KR 1020127001356 A KR1020127001356 A KR 1020127001356A KR 20127001356 A KR20127001356 A KR 20127001356A KR 20120046177 A KR20120046177 A KR 20120046177A
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South Korea
Prior art keywords
ceramic
slip
mold
cutting
green body
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KR1020127001356A
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English (en)
Korean (ko)
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데 리우푸
루이스 레니에르
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소나베이션, 인크.
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Publication of KR20120046177A publication Critical patent/KR20120046177A/ko
Withdrawn legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/85Piezoelectric or electrostrictive active materials
    • H10N30/853Ceramic compositions
    • H10N30/8536Alkaline earth metal based oxides, e.g. barium titanates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/08Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/084Shaping or machining of piezoelectric or electrostrictive bodies by moulding or extrusion
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R17/00Piezoelectric transducers; Electrostrictive transducers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/09Forming piezoelectric or electrostrictive materials
    • H10N30/092Forming composite materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/09Forming piezoelectric or electrostrictive materials
    • H10N30/093Forming inorganic materials
    • H10N30/097Forming inorganic materials by sintering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/85Piezoelectric or electrostrictive active materials
    • H10N30/853Ceramic compositions
    • H10N30/8548Lead-based oxides
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/85Piezoelectric or electrostrictive active materials
    • H10N30/853Ceramic compositions
    • H10N30/8548Lead-based oxides
    • H10N30/8554Lead-zirconium titanate [PZT] based
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/42Piezoelectric device making

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Transducers For Ultrasonic Waves (AREA)
KR1020127001356A 2009-06-19 2010-06-21 압전 세라믹체를 제조하는 방법 Withdrawn KR20120046177A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US21869009P 2009-06-19 2009-06-19
US61/218,690 2009-06-19

Publications (1)

Publication Number Publication Date
KR20120046177A true KR20120046177A (ko) 2012-05-09

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Family Applications (1)

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KR1020127001356A Withdrawn KR20120046177A (ko) 2009-06-19 2010-06-21 압전 세라믹체를 제조하는 방법

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Country Link
US (2) US8703040B2 (enExample)
EP (1) EP2443679A4 (enExample)
JP (1) JP2012531036A (enExample)
KR (1) KR20120046177A (enExample)
CN (1) CN102484200B (enExample)
CA (1) CA2765941A1 (enExample)
WO (1) WO2010147675A1 (enExample)

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KR20160054782A (ko) * 2014-11-07 2016-05-17 포항공과대학교 산학협력단 전극 삽입형 분말사출성형을 이용한 적층형 압전소자 제조방법 및 그에 의해 제조된 적층형 압전 소자
WO2019027268A1 (ko) * 2017-08-04 2019-02-07 ㈜포인트엔지니어링 압전 소재 기둥 및 그 제조방법
KR20230075332A (ko) * 2021-11-22 2023-05-31 한국전자통신연구원 얽힘 광자쌍 생성 장치

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US10562070B2 (en) 2016-05-10 2020-02-18 Invensense, Inc. Receive operation of an ultrasonic sensor
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US10891461B2 (en) 2017-05-22 2021-01-12 Invensense, Inc. Live fingerprint detection utilizing an integrated ultrasound and infrared sensor
US10474862B2 (en) 2017-06-01 2019-11-12 Invensense, Inc. Image generation in an electronic device using ultrasonic transducers
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Publication number Priority date Publication date Assignee Title
KR20160054782A (ko) * 2014-11-07 2016-05-17 포항공과대학교 산학협력단 전극 삽입형 분말사출성형을 이용한 적층형 압전소자 제조방법 및 그에 의해 제조된 적층형 압전 소자
WO2019027268A1 (ko) * 2017-08-04 2019-02-07 ㈜포인트엔지니어링 압전 소재 기둥 및 그 제조방법
KR20230075332A (ko) * 2021-11-22 2023-05-31 한국전자통신연구원 얽힘 광자쌍 생성 장치

Also Published As

Publication number Publication date
EP2443679A4 (en) 2013-10-09
JP2012531036A (ja) 2012-12-06
US8703040B2 (en) 2014-04-22
CA2765941A1 (en) 2010-12-23
EP2443679A1 (en) 2012-04-25
CN102484200A (zh) 2012-05-30
US20140339459A1 (en) 2014-11-20
WO2010147675A1 (en) 2010-12-23
US20110010904A1 (en) 2011-01-20
CN102484200B (zh) 2015-11-25

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Patent event date: 20120117

Patent event code: PA01051R01D

Comment text: International Patent Application

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PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid