KR20120029869A - Light emitting device - Google Patents

Abstract

PURPOSE: A light emitting device is provided to improve light extraction efficiency by including a light extraction pattern formed in a pattern area. CONSTITUTION: An electrode(115) is formed on a light emitting structure layer(135). The light emitting structure layer includes a pattern region(112) with a light extraction structure and a non-pattern region(111). The area of the pattern region is 60 to 80 % of the upper area of the light emitting structure layer.

Description

[0001] LIGHT EMITTING DEVICE [0002]

The present invention relates to a light emitting device.

Light emitting diodes (LEDs) are a type of semiconductor device that converts electrical energy into light. The light emitting diode has advantages of low power consumption, semi-permanent life, fast response speed, safety and environmental friendliness compared to conventional light sources such as fluorescent and incandescent lamps.

Therefore, many researches are being made to replace the existing light sources with light emitting diodes, and the use of light emitting devices as light sources for lighting devices such as various lamps, liquid crystal displays, electronic signs, and street lamps that are used indoors and outdoors is increasing. to be.

The embodiment provides a light emitting device having a new structure.

The embodiment provides a light emitting device having excellent optical characteristics.

The light emitting device according to the embodiment includes a conductive support substrate; A light emitting structure layer including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer on the conductive support substrate. ; And an electrode on the light emitting structure layer, wherein the light emitting structure layer includes a pattern region in which a light extraction structure is formed in a central portion of the upper surface, and a non-pattern region in a peripheral portion of the upper surface, wherein an area of the pattern region is formed in the light emitting structure layer. 60 to 80% of the total area of the upper surface is formed.

The embodiment can provide a light emitting device having a new structure.

The embodiment can provide a light emitting device having excellent optical characteristics.

1 is a cross-sectional view of a light emitting device according to an embodiment.
2 to 11 are cross-sectional views showing a process of a method of manufacturing a light emitting device according to the embodiment.
12 is a view for explaining a light emitting device according to another embodiment.
FIG. 13 is a diagram illustrating a top surface of a first conductive semiconductor layer divided into a pattern region and a non-pattern region in the light emitting device according to the embodiment; FIG.
14 is a diagram illustrating a pattern of a light emission beam emitted from a light emitting element.
15 is a cross-sectional view of a light emitting device package including a light emitting device according to the embodiment.
16 is a view illustrating a backlight unit including a light emitting device package according to an embodiment.
17 illustrates a lighting unit including a light emitting device package according to an embodiment.

In the description of an embodiment, each layer, region, pattern or structure may be "under" or "under" the substrate, each layer, region, pad or pattern. In the case where it is described as being formed at, "up" and "under" include both "directly" or "indirectly" formed through another layer. do. In addition, the criteria for up / down or down / down each layer will be described with reference to the drawings.

In the drawings, the thickness or size of each layer is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size of each component does not necessarily reflect the actual size.

Hereinafter, another light emitting device will be described with reference to the accompanying drawings.

1 is a cross-sectional view of a light emitting device according to an embodiment.

Referring to FIG. 1, the light emitting device 100 according to the embodiment may include a conductive support substrate 175, a light emitting structure layer 135 that generates light on the conductive support substrate 175, and the light emitting structure layer 135. And an electrode 115 on the top.

The light emitting structure layer 135 includes a first conductive semiconductor layer 110, an active layer 120, and a second conductive semiconductor layer 130, and the first and second conductive semiconductor layers 110 and 130. Electrons and holes provided from the light may be generated by recombination in the active layer 120.

Between the conductive support substrate 175 and the light emitting structure layer 135, a bonding layer 170, a reflective layer 160, an ohmic contact layer 150, a current blocking layer (CBL) 145, and protection The member 140 may be positioned, and the passivation layer 180 may be formed on the side surface of the light emitting structure layer 135. This will be described in more detail as follows.

The conductive support substrate 175 may support the light emitting structure layer 135, and may supply power to the light emitting structure layer 135 together with the electrode 115. The conductive support substrate 175 may include, for example, at least one of Cu, Au, Ni, Mo, Cu-W, Si, Ge, GaAs, ZnO, or SiC. However, the embodiment is not limited thereto, and instead of the conductive support substrate 175, an insulating substrate may be used, and a separate electrode may be formed.

The conductive support substrate 175 may have a thickness of 30 μm to 500 μm. However, the embodiment is not limited thereto and may vary depending on the design of the light emitting device 100.

The bonding layer 170 may be formed on the conductive support substrate 175. The bonding layer 170 may be a bonding layer, and may be formed under the reflective layer 160 and the protection member 140. An outer surface of the bonding layer 170 is exposed and contacts the reflective layer 160, the end of the ohmic contact layer 150, and the protection member 140 to protect the reflective layer 160, the ohmic contact layer 150, and the protective layer 140. The adhesion between the members 140 may be enhanced.

The bonding layer 170 includes a barrier metal or a bonding metal. For example, the bonding layer 170 may include at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Al, Si, Ag, Ta, or an alloy thereof.

The reflective layer 160 may be formed on the bonding layer 170. The reflective layer 160 may reflect light generated in the light emitting structure layer 135 and traveling in the direction in which the reflective layer 160 is disposed, thereby improving luminous efficiency of the light emitting device 100.

For example, the reflective layer 160 may include at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, or an alloy thereof. In addition, the reflective layer 160 includes the above-described metal or alloy, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZO), and indium gallium tin oxide (IGTO). ), It may be formed in multiple layers using a light transmitting conductive material such as indium gallium zinc oxide (IGZO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), and the like. For example, the reflective layer 160 may include a stacked structure of IZO / Ni, AZO / Ag, IZO / Ag / Ni, AZO / Ag / Ni, Ag / Cu, Ag / Pd / Cu, and the like.

The ohmic contact layer 150 may be formed on the reflective layer 160. The ohmic contact layer 150 is in ohmic contact with the second conductive semiconductor layer 130 so that power can be smoothly supplied to the light emitting structure layer 135. The ohmic contact layer 150 may include ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, gallium zinc oxide (GZO), IrO _x , RuO _x , RuO _x / ITO, Ni, Ag, Pt, Ni At least one of / IrO _x / Au or Ni / IrO _x / Au / ITO may be used to implement a single layer or multiple layers.

As described above, the upper surface of the reflective layer 160 is illustrated in contact with the ohmic contact layer 150. However, it is also possible for the reflective layer 160 to contact the protective member 140, the current blocking layer 145, or the light emitting structure layer 135.

The current blocking layer 145 may be formed between the ohmic contact layer 150 and the second conductive semiconductor layer 130. An upper surface of the current blocking layer 145 may contact the second conductive semiconductor layer 130, and a lower surface and a side surface of the current blocking layer 145 may contact the ohmic contact layer 150.

The current blocking layer 145 may be formed such that at least a portion of the current blocking layer 145 overlaps with the electrode 115 in a vertical direction, whereby current is concentrated at the shortest distance between the electrode 115 and the conductive support substrate 175. The light emission efficiency of the light emitting device 100 may be improved by alleviating the phenomenon.

The current blocking layer 145 is formed using a material having electrical insulation, a material having lower electrical conductivity than the ohmic contact layer 150, or a material forming Schottky contact with the second conductive semiconductor layer 130. Can be. For example, the current blocking layer 145 includes ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, ZnO, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , TiO _x , TiO ₂ , Ti, Al, or Cr.

In the exemplary embodiment, the ohmic contact layer 150 contacts the bottom and side surfaces of the current blocking layer 145, but is not limited thereto. Accordingly, the ohmic contact layer 150 and the current blocking layer 145 may be disposed to be spaced apart from each other, or the ohmic contact layer 150 may contact only the side surface of the current blocking layer 145. Alternatively, the current blocking layer 145 may be formed between the reflective layer 160 and the ohmic contact layer 140.

The protection member 140 may be formed in the circumferential region of the upper surface of the bonding layer 170. That is, the protection member 140 may be formed in the circumferential region between the light emitting structure layer 135 and the bonding layer 170, thereby forming a ring shape, a loop shape, a square frame shape, or the like. A portion of the protection member 140 may overlap the light emitting structure layer 135 in the vertical direction.

The protective member 140 may increase the distance between the bonding layer 170 and the active layer 120 at the side surface to reduce the possibility of occurrence of an electrical short between the bonding layer 170 and the active layer 120.

In addition, the protection member 140 may prevent the electrical short circuit occurs in the chip separation process. In more detail, when isolation etching is performed to separate the light emitting structure layer 135 into a unit chip region, debris generated in the bonding layer 170 is the semiconductor of the second conductivity type. An electrical short may occur between the layer 130 and the active layer 120 or between the active layer 120 and the semiconductor layer 110 of the first conductivity type, and the protection member 140 may prevent the electrical short. do. The protection member 140 may be formed of a material that does not break or cause fragmentation during isolation etching, or an insulating material that does not cause an electrical short even when a very small portion or a small amount of fragmentation occurs.

The protection member 140 may be formed of a material having electrical insulation, a material having a lower electrical conductivity than the reflective layer 160 or the bonding layer 170, or a material forming Schottky contact with the second conductive semiconductor layer 130. It can be formed using. For example, the protective member 140 may include ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, ZnO, SiO ₂ , SiO _x , SiO _x N _y , Si ₃ N ₄ , Al ₂ O ₃ , It may include at least one of TiO _x , TiO ₂ , Ti, Al or Cr.

In addition, the light emitting structure layer 135 may be formed on the ohmic contact layer 150 and the protection member 140. Side surfaces of the light emitting structure layer 135 may have an inclination by an isolation etching that divides a plurality of chips into unit chip regions.

The light emitting structure layer 135 may include a compound semiconductor layer of a plurality of group III-V elements, the first conductive semiconductor layer 110, the second conductive semiconductor layer 130, and the like. It may include an active layer 120 located between. In this case, the second conductive semiconductor layer 130 is positioned on the ohmic contact layer 150 and the protection member 140, and the active layer 120 is positioned on the second conductive semiconductor layer 130. The first conductive semiconductor layer 110 may be located on the active layer 120.

The first conductivity type semiconductor layer 110 may include a compound semiconductor of a group III-V element doped with a first conductivity type dopant. For example, the first conductive semiconductor layer 110 may include an n-type semiconductor layer. The n-type semiconductor layer is formed by doping an n-type dopant to a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0≤x≤1, 0≤y≤1, 0≤x + y≤1). Can be. For example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, etc. may include n-type dopants such as Si, Ge, Sn, Se, Te, and the like. The first conductive semiconductor layer 110 may be formed as a single layer or a multilayer, but is not limited thereto.

The active layer 120 may be formed of any one of a single quantum well structure, a multi quantum well structure (MQW), a quantum dot structure, or a quantum line structure, but is not limited thereto.

The active layer 120 may be formed of a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). When the active layer 120 has a multi-quantum well structure, the active layer 120 may be formed by stacking a plurality of well layers and a plurality of barrier layers. For example, the active layer 120 may be formed by alternately stacking a well layer including InGaN and a barrier layer including GaN.

A clad layer (not shown) doped with an n-type or p-type dopant may be formed on and / or under the active layer 120, and the clad layer may include an AlGaN layer or an InAlGaN layer.

The second conductive semiconductor layer 130 may include a compound semiconductor of a group III-V element doped with a second conductive dopant. For example, the second conductive semiconductor layer 130 may include a p-type semiconductor layer. The p-type semiconductor layer is formed by doping a p-type dopant to a semiconductor material having a composition formula of In _x Al _y Ga _1-xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). Can be. For example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, etc. may be formed by including p-type dopants such as Mg, Zn, Ca, Sr, Br and the like. The second conductive semiconductor layer 130 may be formed as a single layer or a multilayer, but is not limited thereto.

In the above description, it is illustrated that the first conductive semiconductor layer 110 includes an n-type semiconductor layer and the second conductive semiconductor layer 130 includes a p-type semiconductor layer. However, the embodiment is not limited thereto.

Therefore, the first conductive semiconductor layer 110 may include a p-type semiconductor layer, and the second conductive semiconductor layer 130 may include an n-type semiconductor layer. In addition, another n-type or p-type semiconductor layer (not shown) may be formed under the second conductive semiconductor layer 130. Accordingly, the light emitting structure layer 135 may have at least one of np, pn, npn, and pnp junction structures. In addition, the doping concentrations of the dopants in the first conductive semiconductor layer 110 and the second conductive semiconductor layer 130 may be uniform or non-uniform. That is, the structure of the light emitting structure layer 135 may be variously modified, but embodiments are not limited thereto.

A pattern region 112 in which a light extraction pattern is formed and a non-pattern region 111 in which the light extraction pattern is not formed are formed on an upper surface of the light emitting structure layer 135. The pattern region 112 is formed at the center of the upper surface of the first conductive semiconductor layer 110, and the non-pattern region 111 is formed at the periphery of the upper surface of the first conductive semiconductor layer 110. The pattern region 112 may be disposed to surround the pattern region 112.

The light extraction pattern formed in the pattern region 112 may improve the light extraction efficiency of the light emitting device 100 by minimizing the amount of light totally reflected from the surface of the first conductive semiconductor layer 110. The light extraction pattern may have a random shape and arrangement, or may be formed to have a desired shape and arrangement.

For example, the light extraction pattern may be formed by arranging a photonic crystal structure having a period of 50 nm to 3000 nm. The photonic crystal structure can efficiently extract light of a specific wavelength region to the outside by an interference effect or the like.

In addition, the light extraction pattern may be formed to have various shapes such as a cylinder, a polygonal pillar, a cone, a polygonal pyramid, a truncated cone, a polygonal truncated cone, and the like.

FIG. 13 is a diagram illustrating a top surface of a first conductive semiconductor layer divided into a pattern region and a non-pattern region in the light emitting device according to the embodiment.

Referring to FIG. 13, an upper surface of the first conductive semiconductor layer 110 may be formed in, for example, a square shape or a rectangular shape. The width D1 of the non-pattern region 111 may be the same or different on the long side and the short side. In the embodiment, the width D1 of the non-pattern region 111 is the same.

The pattern region 112 has widths D2 and D3 from a boundary between the non-pattern region 111 and the pattern region 112 to a center of the pattern region 112. The width D2 at the long side and the width D3 at the short side may be different from each other when the pattern region 112 is formed in a rectangular shape, and the width D2 when the pattern region 112 is formed in a square shape. ) And the width D3 may be the same.

For example, the width D1 of the non-pattern region 111 on the upper surface of the first conductive semiconductor layer 110 is formed to be 90 ~ 120㎛, the non-pattern region 111 and the pattern region Widths D2 and D3 from the boundary between the 112 to the center of the pattern region 112 may be formed to be 380 to 440 μm.

For example, the width D1 of the non-pattern region 111 on the upper surface of the first conductive semiconductor layer 110 may be defined by the boundary between the non-pattern region 111 and the pattern region 112. 20 to 30% of the widths D2 and D3 to the center of the pattern region 112.

Meanwhile, in the light emitting device 100 according to the embodiment, an electrode 115 for supplying power to the first conductive semiconductor layer 110 is disposed on the first conductive semiconductor layer 110. The conductive support substrate 175 for supplying power to the second conductive semiconductor layer 130 has a vertical structure disposed under the second conductive semiconductor layer 130.

In the light emitting device having a horizontal structure, electrodes are disposed on top of each of the first conductive semiconductor layer and the second conductive semiconductor layer. The light emitting device having a vertical structure has a light emitting efficiency of a phosphor compared to the light emitting device having a horizontal structure. This is a low problem.

In the light emitting device having a vertical structure, since light generated in the active layer mainly travels upward in the vertical direction and the light emitting beam has a small area, the light intensity per unit area is larger than that generated in the light emitting device having a horizontal structure. Therefore, the luminous efficiency of the phosphor by light emitted from the light emitting device of the vertical structure is smaller than the luminous efficiency of the phosphor by light emitted from the light emitting device of the horizontal structure. For example, assuming that the same amount of light is generated from the light emitting device of the vertical structure and the light emitting device of the horizontal structure, the luminous efficiency of the phosphor due to the light emitted from the light emitting device of the vertical structure is the light emitting device of the horizontal structure. It is 15 ~ 25% smaller than the luminous efficiency of the phosphor due to the emitted light.

On the other hand, when the light extraction pattern is formed on the upper surface of the first conductive semiconductor layer in the light emitting device having a vertical structure, the light extraction efficiency is increased by about 10 to 15% compared with the case where the light extraction pattern is not formed. However, since the light extracted through the light extraction pattern is not all excited by the phosphor to emit the excitation light from the phosphor, the increase in the light extraction efficiency by the light extraction pattern does not coincide with the increase in the light emission efficiency of the phosphor. .

Therefore, in the light emitting device 100 according to the embodiment, the pattern region 112 for effectively extracting the light generated from the active layer 120 and proceeding upwards vertically, and the light generated from the active layer 120 is totally reflected. As a result, the non-pattern region 111 is formed to increase the luminous efficiency of the phosphor by being extracted in the lateral direction of the light emitting device 100 or in the corner direction where the side surface and the top surface of the light emitting device 100 meet.

The light totally reflected in the non-pattern area 111 is extracted to a side direction of the light emitting device 100 or to an edge portion where the side surface and the top surface of the light emitting device 100 meet and are excited by a phosphor, or the light emitting device 100 is Reflected from the inclined surface of the package body to be installed is excited by the phosphor. Since the light totally reflected in the non-pattern region 111 is inclined about 30 degrees with respect to the horizontal direction and proceeds upward, the light is reflected from the inclined surface of the package body to uniform the light intensity and increase the luminous efficiency of the phosphor. Can be.

Accordingly, the light emitting device 100 according to the embodiment may include a pattern region 112 formed at the center of the upper surface of the first conductive semiconductor layer 110 and a peripheral portion of the upper surface of the first conductive semiconductor layer 110. The light efficiency is increased by forming the non-pattern region 111 to be formed and forming the area of the pattern region 112 to 60 to 80% of the upper surface area of the first conductive semiconductor layer 110. At this time, the amount of light extracted to the corner portion where the side and the upper surface of the first conductive semiconductor layer 110 meets the non-patterned region such that 5 to 50% of the total amount of light emitted from the active layer 120 The area of 111 can be adjusted.

14 is a diagram illustrating a pattern of a light emission beam emitted from a light emitting element.

In FIG. 14, a is a light emission beam pattern emitted from a light emitting device having a horizontal structure, and c is a light emission beam pattern emitted from a light emitting device having a vertical structure having a light extraction structure over the entire upper surface of the first conductive semiconductor layer. , b is an emission beam pattern emitted from the light emitting device according to the embodiment.

As shown in FIG. 14, the light emitting device 100 according to the embodiment may increase light emission efficiency of the phosphor by allowing light emitted from the active layer 120 to be widely spread and emitted.

Referring back to FIG. 1, the electrode 115 is formed on the first conductive semiconductor layer 110, wherein the electrode 115 includes a pad portion for wire bonding and an electrode portion extending from the pad portion. It may include. The electrode part may be branched in a predetermined pattern shape.

Since a light extraction pattern is formed on the top surface of the first conductive semiconductor layer 110, a pattern corresponding to the light extraction pattern may be naturally formed on the top surface of the electrode 115 by a manufacturing process. However, the present invention is not limited thereto.

The passivation layer 180 may be formed on at least a side of the light emitting structure layer 135. In addition, the passivation layer 180 may be formed on an upper surface of the first conductive semiconductor layer 110 and an upper surface of the protection member 140, but is not limited thereto.

Hereinafter, a method of manufacturing the light emitting device 100 according to the embodiment will be described in detail. However, the same or very similar contents to those described above will be omitted or briefly described.

2 to 11 are cross-sectional views illustrating a process of a method of manufacturing a light emitting device according to the embodiment.

As shown in FIG. 2, the light emitting structure layer 135 is formed on the growth substrate 101.

The growth substrate 101 may include, for example, at least one of sapphire (Al ₂ O ₃ ), Si, SiC, GaAs, GaN, ZnO, MgO, GaP, InP, and Ge. However, the embodiment is not limited thereto, and the growth substrate 101 made of various materials may be used.

The light emitting structure layer 135 may be formed by sequentially growing the first conductive semiconductor layer 110, the active layer 120, and the second conductive semiconductor layer 130 on the growth substrate 101. .

The light emitting structure layer 135 may include, for example, metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), or plasma-enhanced chemical vapor deposition (PECVD). It may be formed using a method such as molecular beam growth (MBE), hydride vapor phase growth (HVPE) and the like. However, this is not limitative.

Meanwhile, a buffer layer and / or an undoped nitride layer (not shown) may be formed between the light emitting structure layer 135 and the growth substrate 101 to alleviate the lattice constant difference.

3, the protection member 140 may be selectively formed on the light emitting structure layer 135 corresponding to the unit chip region. The protection member 140 may be formed around the unit chip area by using a patterned mask. The protective member 140 may be formed using various deposition methods such as electron beam (E-beam) deposition, sputtering, and PECVD.

Subsequently, as shown in FIG. 4, a current blocking layer 145 may be formed on the second conductive semiconductor layer 130. The current blocking layer 145 may be formed using a mask pattern.

In FIGS. 3 and 4, the protection member 140 and the current blocking layer 145 are formed in separate processes, but the protection member 140 and the current blocking layer 145 are formed of the same material to form a single material. It is also possible to form simultaneously in a process. For example, after forming the SiO ₂ layer on the second conductive semiconductor layer 130, the protective member 140 and the current blocking layer 145 may be simultaneously formed using a mask pattern.

Subsequently, as shown in FIG. 5, the ohmic contact layer 150 and the reflective layer 160 may be sequentially formed on the second conductive semiconductor layer 130 and the current blocking layer 145.

The ohmic contact layer 150 and the reflective layer 160 may be formed by, for example, any one of electron beam (E-beam) deposition, sputtering, and PECVD.

6 and 7, the conductive support substrate 175 is bonded to the structure of FIG. 5 via the bonding layer 170. The bonding layer 170 may be in contact with the reflective layer 160, the end of the ohmic contact layer 150, and the protective member 140 to strengthen the adhesive force therebetween.

In the above-described embodiment, the conductive support substrate 175 is bonded by the bonding method through the bonding layer 170, but the conductive support substrate 175 is not plated by forming the bonding layer 170. Alternatively, it may be formed by a vapor deposition method.

Next, as shown in FIG. 8, the growth substrate 101 is removed from the light emitting structure layer 135. In FIG. 8, the structure illustrated in FIG. 7 is shown upside down.

The growth substrate 101 may be removed by a laser lift off method or a chemical lift off method.

Next, as illustrated in FIG. 9, the light emitting structure layer 135 is isolated by a unit chip region and separated into a plurality of light emitting structure layers 135. For example, the isolation etching may be performed by a dry etching method such as inductively coupled plasma (ICP).

Subsequently, as illustrated in FIG. 10, a passivation layer 180 is formed on the protective member 140 and the light emitting structure layer 135, and the passivation layer is exposed to expose the top surface of the first conductive semiconductor layer 110. The layer 180 is selectively removed. The pattern region 112 having the light extraction pattern is formed on the upper surface of the first conductive semiconductor layer 110 to improve light extraction efficiency. The light extraction pattern may be formed by a wet etching process or a dry etching process.

In this case, in selectively removing the passivation layer 180, an area of the pattern region 112 may be considered, and an area in which the passivation layer 180 remains is an unpatterned region in which the light extraction pattern is not formed. (111).

Next, as shown in FIG. 11, the electrode 115 is formed on the first conductive semiconductor layer 110.

In addition, when the structure of FIG. 11 is separated into a unit chip region through a chip separation process, a plurality of light emitting devices may be manufactured.

The chip separation process may include, for example, a breaking process of separating a chip by applying a physical force using a blade, a laser scrubbing process of separating a chip by irradiating a laser to a chip boundary, and a wet or dry etching process. Etching process and the like. The embodiment is not limited thereto.

12 is a view for explaining a light emitting device according to another embodiment.

12 is different from the light emitting device described with reference to FIG. 1 in the form of the passivation layer 180.

In the light emitting device 100 illustrated in FIG. 1, the non-pattern region 111 is formed on the upper surface of the first conductive semiconductor layer 110, and the passivation layer 180 is formed. Although the pattern region 112 is formed in the portion not formed, the light emitting device 100 illustrated in FIG. 12 has the non-pattern region 111 formed in the portion where the passivation layer 180 is not formed. In this case, in forming the pattern region 112, an area in which the pattern region 112 is formed may be controlled by selectively forming a mask layer on the first conductive semiconductor layer 110.

The passivation layer 180 may not be formed on the top surface of the first conductivity type semiconductor layer 110, and as shown in FIG. 12, the non-pattern area of the top surface of the first conductivity type semiconductor layer 110 is shown. It may be partially formed in the (111).

Hereinafter, a light emitting device package including a light emitting device according to the present embodiment will be described with reference to FIG. 15. 15 is a cross-sectional view of a light emitting device package including a light emitting device according to the embodiment.

Referring to FIG. 15, the light emitting device package according to the embodiment includes a package body 30, a first conductive layer 31 and a second conductive layer 32 provided on the package body 30, and the package body ( The light emitting device 100 is disposed on the first and second conductive layers 31 and 32 and electrically connected to the first and second conductive layers 31 and 32, and a molding member 40 surrounding the light emitting device 100.

The package body 30 may be formed of a resin such as polyphthalamide (PPA), liquid crystal polymer (LCP), polyamide 9T (polyamid9T, PA9T), metal, photosensitive glass, sapphire, etc. (Al ₂ O ₃ ), ceramics, printed circuit boards (PCB), and the like. However, the present embodiment is not limited to these materials.

An inclined surface 34 is formed on the package body 30 to form a cavity in which an upper portion thereof is opened. The inclined surface 34 may be perpendicular or inclined to the bottom surface of the cavity.

As described above, the inclined surface 34 may reflect light emitted from a side portion of the light emitting device 100 or a corner portion where the side surface and the top surface meet to increase the luminous efficiency of the phosphor.

The first conductive layer 31 and the second conductive layer 32 electrically connected to the light emitting device 100 are disposed on the package body 30. The first conductive layer 31 and the second conductive layer 32 may be formed of a metal plate having a predetermined thickness, and another metal layer may be plated on this surface. The first conductive layer 31 and the second conductive layer 32 may be made of a metal having excellent conductivity. Such metals include titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), and the like. There is this.

The first and second conductive layers 31 and 32 provide power to the light emitting device 100. In addition, the first and second conductive layers 31 and 32 may serve to increase light efficiency by reflecting light generated from the light emitting device 100, and may transmit heat generated from the light emitting device 100 to the outside. It can also play a role.

The light emitting device 100 may be electrically connected to the first conductive layer 31 through a wire 50 and may be electrically connected to the second conductive layer 32 in direct contact.

The molding member 40 surrounding the light emitting device 100 may be formed in the cavity to protect the light emitting device 100. In addition, the molding member 40 may include a phosphor to change the wavelength of light emitted from the light emitting device 100.

The light emitting device package according to the embodiment may include the light emitting device 100 according to the embodiment, thereby increasing the luminous efficiency of the phosphor included in the molding member 40.

The light emitting device package according to the above-described embodiments and modifications may function as a lighting system such as a backlight unit, an indicator device, a lamp, and a street lamp. This will be described with reference to FIGS. 16 and 17.

16 is a view illustrating a backlight unit including a light emitting device package according to an embodiment. However, the backlight unit 1100 of FIG. 16 is an example of an illumination system, and is not limited thereto.

Referring to FIG. 16, the backlight unit 1100 may be disposed on a bottom cover 1140, a light guide member 1120 disposed in the bottom cover 1140, and at least one side or a bottom surface of the light guide member 1120. The light emitting module 1110 may be included. In addition, a reflective sheet 1130 may be disposed under the light guide member 1120.

The bottom cover 1140 may be formed in a box shape having an upper surface open to accommodate the light guide member 1120, the light emitting module 1100, and the reflective sheet 1130, and may be formed of metal or resin. Can be. However, the present invention is not limited thereto.

The light emitting module 1110 may include a plurality of light emitting device packages 600 mounted on the substrate 700. The plurality of light emitting device packages 600 provides light to the light guide member 1120.

As shown, the light emitting module 1110 may be disposed on at least one of the inner surfaces of the bottom cover 1140, thereby providing light toward at least one side of the light guide member 1120. .

However, the light emitting module 1110 may be disposed under the light guide member 1120 in the bottom cover 1140 to provide light toward the bottom surface of the light guide member 1120. This may be variously modified according to the design of the backlight unit 1100.

The light guide member 1120 may be disposed in the bottom cover 1140. The light guide member 1120 may surface-light the light provided from the light emitting module 1110 and guide the light guide member to a display panel (not shown).

The light guide member 1120 may be, for example, a light guide panel (LGP). The light guide plate may be, for example, an acrylic resin such as polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), a cyclic olefin copolymer (COC), or polycarbonate (PC). It may be formed of one of polyethylene naphthalate resin.

The optical sheet 1150 may be disposed above the light guide member 1120.

The optical sheet 1150 may include, for example, at least one of a diffusion sheet, a light collecting sheet, a luminance rising sheet, and a fluorescent sheet. For example, the optical sheet 1150 may be formed by stacking a diffusion sheet, a light collecting sheet, a luminance rising sheet, and a fluorescent sheet. In this case, the diffusion sheet 1150 evenly diffuses the light emitted from the light emitting module 1110, and the diffused light may be focused onto a display panel (not shown) by the light collecting sheet. At this time, the light emitted from the light collecting sheet is light that is randomly polarized. The luminance rising sheet can increase the degree of polarization of light emitted from the light collecting sheet. The light collecting sheet can be, for example, a horizontal or / and vertical prism sheet. In addition, the brightness rising sheet may be, for example, a dual brightness enhancement film. In addition, the fluorescent sheet may be a translucent plate or film containing phosphors.

The reflective sheet 1130 may be disposed under the light guide member 1120. The reflective sheet 1130 may reflect light emitted through the lower surface of the light guide member 1120 toward the exit surface of the light guide member 1120. The reflective sheet 1130 may be formed of a resin having good reflectance, for example, PET, PC, poly vinyl chloride, resin, or the like, but is not limited thereto.

17 is a view illustrating a lighting unit including a light emitting device package according to an embodiment. However, the lighting unit 1200 of FIG. 17 is an example of a lighting system, but is not limited thereto.

Referring to FIG. 17, the lighting unit 1200 includes a case body 1210, a light emitting module 1230 installed in the case body 1210, and a connection terminal installed in the case body 1210 and receiving power from an external power source. 1220.

The case body 1210 is preferably formed of a material having good heat dissipation, for example, may be formed of a metal or resin.

The light emitting module 1230 may include a substrate 700 and at least one light emitting device package 600 mounted on the substrate 700.

The substrate 700 may be a circuit pattern printed on the insulator, for example, a printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, and the like. It may include.

In addition, the substrate 700 may be formed of a material that efficiently reflects light, or the surface may be formed of a color in which the light is efficiently reflected, for example, white, silver, or the like.

At least one light emitting device package 600 may be mounted on the substrate 700.

Each of the light emitting device packages 600 may include at least one light emitting diode (LED). The light emitting device may include a colored light emitting device for emitting colored light of red, green, blue or white color, and a UV light emitting device for emitting ultraviolet light (UV, UltraViolet).

The light emitting module 1230 may be arranged to have a combination of various light emitting devices to obtain color and luminance. For example, the white light emitting device, the red light emitting device, and the green light emitting device may be combined to secure high color rendering (CRI). In addition, a fluorescent sheet may be further disposed on a traveling path of light emitted from the light emitting module 1230, and the fluorescent sheet changes the wavelength of light emitted from the light emitting module 1230. For example, when the light emitted from the light emitting module 1230 has a blue wavelength band, the fluorescent sheet may include a yellow phosphor, and the light emitted from the light emitting module 1230 may be finally viewed as white light after passing through the fluorescent sheet. do.

The connection terminal 1220 may be electrically connected to the light emitting module 1230 to supply power. According to FIG. 17, the connection terminal 1220 is inserted into and coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1220 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by wiring.

In the lighting system as described above, at least one of a light guide member, a diffusion sheet, a light collecting sheet, a luminance rising sheet, and a fluorescent sheet may be disposed on a propagation path of light emitted from the light emitting module to obtain a desired optical effect.

As described above, the illumination system may have excellent light efficiency characteristics by including a light emitting device package having excellent light efficiency.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in each embodiment may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

Claims (6)

Conductive support substrate;
A light emitting structure layer including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer on the conductive support substrate. ; And
An electrode on the light emitting structure layer,
The light emitting structure layer includes a pattern region in which a light extraction structure is formed in a central upper surface, and a non-pattern region in a peripheral portion of the upper surface.
The area of the pattern region is formed of 60 to 80% of the total area of the upper surface of the light emitting structure layer. The method of claim 1,
The non-pattern region is disposed around the pattern region. The method of claim 1,
The width of the non-pattern region is 20 to 30% of the width from the boundary between the non-pattern region and the pattern region to the center of the pattern region. The method of claim 1,
And a passivation layer surrounding a side surface of the light emitting structure layer and partially formed on an upper surface of the light emitting structure layer. The method of claim 4, wherein
The passivation layer is formed on the non-patterned region. 6. The method of claim 5,
The passivation layer is partially formed on the non-patterned region.

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