KR20120020599A - Light emitting device and light emitting device package - Google Patents

Light emitting device and light emitting device package Download PDF

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Publication number
KR20120020599A
KR20120020599A KR1020100084299A KR20100084299A KR20120020599A KR 20120020599 A KR20120020599 A KR 20120020599A KR 1020100084299 A KR1020100084299 A KR 1020100084299A KR 20100084299 A KR20100084299 A KR 20100084299A KR 20120020599 A KR20120020599 A KR 20120020599A
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South Korea
Prior art keywords
layer
light emitting
emitting device
electrode
light
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KR1020100084299A
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Korean (ko)
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정환희
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엘지이노텍 주식회사
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Priority to KR1020100084299A priority Critical patent/KR20120020599A/en
Publication of KR20120020599A publication Critical patent/KR20120020599A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements

Abstract

PURPOSE: A light emitting device and a light emitting device package are provided to improve light efficiency by reflecting light which faces the inside of an emitting device while being refracted with a fluorescent substance, through a reflection electrode layer. CONSTITUTION: A light emitting structure layer(135) emitting light is formed on a conductive supporting substrate(175). The light emitting structure layer comprises a first conductive semiconductor layer(110), an active layer(120), and a second conductive semiconductor layer(130). An electrode(115) and a reflection electrode layer(117) are formed on the light emitting structure layer. A junction layer(170) and a reflecting layer(160) are formed between the conductive supporting substrate and the light emitting structure layer. A passivation layer(180) is formed on a side of the light emitting structure layer.

Description

LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE}

The present disclosure relates to a light emitting device and a light emitting device package.

Light emitting diodes (LEDs) are a type of semiconductor device that converts electrical energy into light. The light emitting diode has advantages of low power consumption, semi-permanent life, fast response speed, safety and environmental friendliness compared to conventional light sources such as fluorescent and incandescent lamps.

Therefore, many researches are being made to replace the existing light sources with light emitting diodes, and the use of light emitting devices as light sources for lighting devices such as various lamps, liquid crystal displays, electronic signs, and street lamps that are used indoors and outdoors is increasing. to be.

The embodiment provides a light emitting device and a light emitting device package capable of improving efficiency.

The light emitting device according to the embodiment, the conductive support substrate; A light emitting structure layer including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer on the conductive support substrate; An electrode on the light emitting structure layer; And a reflective electrode layer on the electrode.

The light emitting device package according to the embodiment includes a package body; A first electrode layer and a second electrode layer provided on the package body; And a light emitting device electrically connected to the first electrode layer and the second electrode layer. The light emitting device, the conductive support substrate; A light emitting structure layer including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer on the conductive support substrate; An electrode on the light emitting structure layer; And a reflective electrode layer on the electrode.

According to the embodiment, the reflective electrode layer may undesirably reflect light directed into the light emitting device to improve efficiency. For example, efficiency may be improved by reflecting light refracted by a phosphor or the like which is emitted from the light emitting device and then disposed in another structure (for example, a molding member) constituting the light emitting device package.

1 is a cross-sectional view of a light emitting device according to the first embodiment.
2 is a plan view of a light emitting device according to the first embodiment.
3 is a plan view of a light emitting device according to a modification of the first embodiment.
4 is a cross-sectional view of the light emitting device according to the second embodiment.
5 is a cross-sectional view of a light emitting device according to the second embodiment.
6 to 15 are cross-sectional views illustrating steps of a method of manufacturing a light emitting device according to the embodiment.
16 is a cross-sectional view of a light emitting device package including a light emitting device according to the embodiment.
17 is a view showing the light output of the samples according to Experimental Examples 1 and 2, and Comparative Examples 1 and 2.
18 is a view illustrating a backlight unit including a light emitting device package according to an embodiment.
19 is a view illustrating a lighting unit including a light emitting device package according to an embodiment.

In the description of embodiments, each layer, region, pattern, or structure may be “on” or “under” the substrate, each layer, region, pad, or pattern. Substrate formed in ”includes all formed directly or through another layer. Criteria for the top / bottom or bottom / bottom of each layer will be described with reference to the drawings.

The thickness or the size of each layer (film), region, pattern or structure in the drawings may be modified for clarity and convenience of explanation, and thus does not entirely reflect the actual size.

Hereinafter, exemplary embodiments and modifications of the present invention will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view of a light emitting device according to the first embodiment.

Referring to FIG. 1, the light emitting device 100 according to the present exemplary embodiment may include a conductive support substrate 175, a light emitting structure layer 135 that generates light on the conductive support substrate 175, and the light emitting structure layer 135. ) And an electrode 115 and a reflective electrode layer 117. The light emitting structure layer 135 includes a first conductive semiconductor layer 110, an active layer 120, and a second conductive semiconductor layer 130, and is provided from the first and second conductive semiconductor layers 110 and 130. The electrons and holes may be recombined in the active layer 120 to generate light.

Between the conductive support substrate 175 and the light emitting structure layer 135, the bonding layer 170, the reflective layer 160, the ohmic layer 150, the current blocking layer (CBL) 145, and the protective member 140 ) And the passivation layer 180 may be formed on the side surface of the light emitting structure layer 135. This will be described in more detail as follows.

The conductive support substrate 175 may support the light emitting structure layer 135 and provide power to the light emitting structure layer 135 together with the electrode 115. The conductive support substrate 175 may include, for example, at least one of Cu, Au, Ni, Mo, Cu-W, Si, Ge, GaAs, ZnO, or SiC. However, the embodiment is not limited thereto, and an insulating substrate may be used instead of the conductive support substrate 175, and a separate electrode may be formed.

The conductive support substrate 175 may have a thickness of 30 μm to 500 μm. However, the embodiment is not limited thereto and may vary depending on the design of the light emitting device 100.

The bonding layer 170 may be formed on the conductive support substrate 175. The bonding layer 170 may be formed under the reflective layer 160 and the protection member 140 as a bonding layer. The bonding layer 170 exposes an outer surface thereof and contacts the reflective layer 160, the end of the ohmic layer 150, and the protective member 140, such that the reflective layer 160, the ohmic layer 150, and the protective member 140 are exposed to each other. It can strengthen the adhesion between.

The bonding layer 170 includes a barrier metal or a bonding metal. For example, the bonding layer 170 may include at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Al, Si, Ag, Ta, and alloys thereof.

The reflective layer 160 may be formed on the bonding layer 170. The reflective layer 160 may reflect light emitted from the light emitting structure layer 135 toward the reflective layer 160, thereby improving light emission efficiency of the light emitting device 100.

For example, the reflective layer 160 may include at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, or an alloy thereof. In addition, the reflective layer 160 includes the above-described metal or alloy, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZO), and indium gallium tin oxide (IGTO). ), It may be formed in multiple layers using a light transmitting conductive material such as indium gallium zinc oxide (IGZO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), and the like. For example, the reflective layer 160 may include a stacked structure of IZO / Ni, AZO / Ag, IZO / Ag / Ni, AZO / Ag / Ni, Ag / Cu, Ag / Pd / Cu, and the like.

The ohmic layer 150 may be formed on the reflective layer 160. The ohmic layer 150 is in ohmic contact with the second conductive semiconductor layer 130 so that power can be smoothly supplied to the light emitting structure layer 135. The ohmic layer 150 includes ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, gallium zinc oxide (GZO), IrO x , RuO x , RuO x / ITO, Ni, Ag, Pt, Ni / IrO using at least one of x / Au, or Ni / IrO x / Au / ITO can be implemented as a single layer or multiple layers.

 As described above, the upper surface of the reflective layer 160 is illustrated in contact with the ohmic layer 150. However, it is also possible for the reflective layer 160 to contact the protective member 140, the current blocking layer 145, or the light emitting structure layer 135.

A current blocking layer 145 may be formed between the first ohmic layer 150 and the second conductive semiconductor layer 130. An upper surface of the current blocking layer 145 may contact the second conductive semiconductor layer 130, and a lower surface and a side surface of the current blocking layer 145 may contact the ohmic layer 150.

The current blocking layer 145 may be formed to overlap at least a portion of the electrode 115 in the vertical direction, thereby alleviating a phenomenon in which current is concentrated at the shortest distance between the electrode 115 and the conductive support substrate 175. The luminous efficiency of the light emitting device 100 can be improved.

The current blocking layer 145 may be formed of a material having electrical insulation, a material having a lower electrical conductivity than the reflective layer 160 or the bonding layer 170, or a material forming Schottky contact with the second conductive semiconductor layer 130. Can be formed. For example, the current blocking layer 145 includes ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, ZnO, SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , TiO x , TiO 2 , Ti, Al, or Cr.

As described above, the ohmic layer 150 contacts the bottom and side surfaces of the current blocking layer 145, but is not limited thereto. Therefore, the ohmic layer 150 and the current blocking layer 145 may be spaced apart from each other, or the ohmic layer 150 may contact only the side surface of the current blocking layer 145. Alternatively, the current blocking layer 145 may be formed between the reflective layer 160 and the ohmic layer 150.

The protection member 140 may be formed in the circumferential region of the upper surface of the bonding layer 170 described above. That is, the protection member 140 may be formed in the circumferential region between the light emitting structure layer 135 and the bonding layer 170, thereby forming a ring shape, a loop shape, a frame shape, or the like. A portion of the protection member 140 may overlap the light emitting structure layer 135 in the vertical direction.

The protection member 140 may increase the distance between the bonding layer 170 and the active layer 120 at the side, thereby reducing the possibility of the electrical short between the bonding layer 170 and the active layer 120. In addition, the protection member 140 may also prevent moisture or the like from penetrating into the gap between the light emitting structure layer 135 and the conductive support member 175.

In addition, the protection member 140 may prevent the occurrence of an electrical short in the chip separation process. In more detail, when isolation etching is performed to separate the light emitting structure layer 135 into the unit chip region, the fragments generated in the bonding layer 170 may be separated from the second conductive semiconductor layer 130. An electrical short may occur between the active layer 120 or between the active layer 120 and the first conductive semiconductor layer 110, and the protection member 140 may prevent the electrical short. Accordingly, the protection member 140 may be formed of a material that does not break or cause fragments during the isolation etching, or an insulating material that does not cause an electrical short even if a very small portion or a small amount of fragments is generated.

The protective member 140 may be formed of a material having electrical insulation, a material having a lower electrical conductivity than the reflective layer 160 or the bonding layer 170, or a material forming Schottky contact with the second conductive semiconductor layer 130. Can be formed. For example, the protective member 140 may include ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, ZnO, SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , It may include at least one of TiO x , TiO 2 , Ti, Al or Cr.

The light emitting structure layer 135 may be formed on the ohmic layer 150 and the protection member 140. Side surfaces of the light emitting structure layer 135 may be inclined by an isolation etching that divides the plurality of chips into unit chip regions.

The light emitting structure layer 135 may include a compound semiconductor layer of a plurality of group III-V elements, the first conductive semiconductor layer 110, the second conductive semiconductor layer 130, and an active layer disposed therebetween. 120 may be included. In this case, the second conductive semiconductor layer 130 is positioned on the first ohmic layer 150 and the protection member 140, and the active layer 120 is positioned on the second conductive semiconductor layer 130. The type semiconductor layer 110 may be located on the active layer 120.

The first conductivity type semiconductor layer 110 may include a compound semiconductor of a group III-V element doped with the first conductivity type dopant. For example, the first conductivity-type semiconductor layer 110 may include an n-type semiconductor layer. The n-type semiconductor layer is an n-type dopant in a semiconductor material having a compositional formula of In x Al y Ga 1 -x- y N (0≤x≤1, 0 ≤y≤1, 0≤x + y≤1) doped Can be formed. For example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, etc. may include n-type dopants such as Si, Ge, Sn, Se, Te, and the like. The first conductivity type semiconductor layer 110 may be formed as a single layer or a multilayer, but is not limited thereto.

The active layer 120 may be formed of any one of a single quantum well structure, a multi quantum well structure (MQW), a quantum dot structure, or a quantum line structure, but is not limited thereto.

The active layer 120 may be formed of a semiconductor material having a composition formula of In x Al y Ga 1 -x- y N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). When the active layer 120 is formed in a multi-quantum well structure, the active layer 120 may be formed by stacking a plurality of well layers and a plurality of barrier layers. For example, the active layer 120 may be formed by alternately stacking a well layer including InGaN and a barrier layer including GaN.

A clad layer (not shown) doped with an n-type or p-type dopant may be formed on and / or under the active layer 120, and the clad layer may include an AlGaN layer or an InAlGaN layer.

The second conductivity type semiconductor layer 130 may include a compound semiconductor of a group III-V element doped with the second conductivity type dopant. For example, the second conductivity-type semiconductor layer 130 may include a p-type semiconductor layer. The p-type semiconductor layer is a p-type dopant doped into the semiconductor material having a compositional formula of In x Al y Ga 1 -x- y N (0≤x≤1, 0 ≤y≤1, 0≤x + y≤1) Can be formed. For example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, etc. may be formed by including p-type dopants such as Mg, Zn, Ca, Sr, Br and the like. The second conductivity-type semiconductor layer 130 may be formed as a single layer or a multilayer, but is not limited thereto.

In the above description, the first conductive semiconductor layer 110 includes an n-type semiconductor layer and the second conductive semiconductor layer 130 includes a p-type semiconductor layer. However, the embodiment is not limited thereto. Accordingly, the first conductivity type semiconductor layer 110 may include a p-type semiconductor layer and the second conductivity type semiconductor layer 130 may include an n-type semiconductor layer. In addition, another n-type or p-type semiconductor layer (not shown) may be formed under the second conductivity-type semiconductor layer 130. Accordingly, the light emitting structure layer 135 may have at least one of np, pn, npn, and pnp junction structures. In addition, the doping concentrations of the dopants in the first conductive semiconductor layer 110 and the second conductive semiconductor layer 130 may be uniform or non-uniform. That is, the structure of the light emitting structure layer 135 may be variously modified, but embodiments are not limited thereto.

The light extraction pattern 112 may be formed on the top surface of the light emitting structure layer 135. The light extraction pattern 112 may improve the light extraction efficiency of the light emitting device 100 by minimizing the amount of light totally reflected from the surface. The light extraction pattern 112 may have a random shape and arrangement, or may be formed to have a desired shape and arrangement.

For example, the light extraction pattern 112 may be formed by arranging a photonic crystal structure having a period of 50 nm to 3000 nm. The photonic crystal structure can efficiently extract light of a specific wavelength region to the outside by an interference effect or the like.

In addition, the light extraction pattern 112 may be formed to have various shapes such as a cylinder, a polygonal pillar, a cone, a polygonal pyramid, a truncated cone, a polygonal truncated cone, but is not limited thereto.

The electrode 115 may be formed on the light emitting structure layer 135, more specifically, the first conductivity-type semiconductor layer 110. One surface of the first conductivity-type semiconductor layer 110 on which the electrode 115 is formed may be an N-face surface.

The electrode 115 may be Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rh, Ir, W, Ti, Ag, Cr, Mo, Nb, Al, Ni, Cu, WTi or these It may include at least one of the alloys.

For example, the electrode 115 may include an ohmic layer 1151, an electrode layer 1152, a wire bonding layer 1153, and a junction electrode layer 1154 that are sequentially stacked on a conductive support substrate.

Here, the ohmic layer 1151 is a layer for improving ohmic contact characteristics, and may include at least one of Cr, Al, V, Ti, and alloys thereof. The electrode layer 1152 may be formed including barrier layers for preventing the incorporation of metals, and a metal layer positioned between the barrier layers to form the electrode 115 in an appropriate thickness. The barrier layers may include Ni, Al, alloys thereof, and the like, and the metal layer may include Cu, alloys thereof, and the like. The wire bonding layer 1153 may include Au, etc. as a layer for improving wire bonding characteristics. The junction electrode layer 1154 is a layer for improving bonding characteristics of the reflective electrode layer 117 formed on the electrode 115 and may include Ti, Ni, an alloy thereof, or the like. The junction electrode layer 1154 may be formed only at a portion where the reflective electrode layer 117 is formed, and may not be formed at a portion where the reflective electrode layer 117 is not formed.

For example, a Cr / Al stacked structure may be used as the ohmic layer 1151, a Ni / Cu / Ni stacked structure may be used as the electrode layer 1152, Au may be used as the wire bonding layer 1153, and Ti or Ni may be used as the bonding electrode layer 1154. .

However, the embodiment is not limited thereto, and the electrode 115 may be formed of a single layer such as a W layer, a WTi layer, a Ti layer, an Al layer, or an Ag layer.

The reflective electrode layer 117 is formed on the electrode 115. The reflective electrode layer 117 may include a metal having excellent reflection characteristics, for example, Ag, Al, Rh, Pt, or an alloy thereof.

The reflective electrode layer 117 is generated in the light emitting structure layer 135 and then proceeds to the outside and is refracted to reflect light toward the light emitting device 100 to improve efficiency. For example, after the light emitted from the light emitting device 100 reflects the light refracted by another structure constituting the light emitting device package (see FIG. 16) (for example, a molding member (reference numeral 40 of FIG. 16, hereinafter same)). The electrode layer 117 may reflect. This may increase the amount of light emitted to the outside to improve the efficiency.

In this case, when the molding member 40 includes the phosphor, the reflective electrode layer 117 may reflect the light refracted by the phosphor and directed toward the inside of the light emitting device 100, thereby increasing efficiency.

The reflective electrode layer 117 may have a thickness of 5 nm to 10 μm. When the thickness of the reflective electrode layer 117 is less than 5 nm, the reflection effect may be reduced, and when the thickness of the reflective electrode layer 117 exceeds 10 μm, the process cost and time may be increased. However, the embodiment is not limited to this thickness.

The upper surface and the lower surface of the electrode 115 and the reflective electrode layer 117, that is, the upper and lower surfaces of the reflective electrode layer 117 are formed in a plane so that the reflection can be more smoothly performed in the reflective electrode layer 117. That is, the light extraction pattern 112 is formed on the top surface of the first conductivity type semiconductor layer 110 to improve efficiency by interference, etc., while the top surfaces of the electrode 115 and the reflective electrode layer 117 formed thereon are flat. It can be configured to improve the efficiency by reflection.

In the exemplary embodiment, the upper surface and the lower surface of the reflective electrode layer 117 are illustrated as being planar, but are not limited thereto. Therefore, only one of the upper surface and the lower surface of the reflective electrode layer 117 can be configured in a plane.

Referring to FIG. 2 along with FIG. 1, the electrode 115 may include a pad portion 115a through which wire bonding is performed, and an electrode portion 115b extending from the pad portion 115a. Although the pad portion 115a is illustrated as having a rectangular planar shape in the drawing, the shape of the pad portion 115a is not limited thereto and may be any shape that may serve as the pad portion 115a. In addition, although the pad part 115a is positioned at the center of the light emitting device 100 and the electrode part 115b extends toward four edges, the present invention is not limited thereto and may have various shapes.

In the present exemplary embodiment, the reflective electrode layer 117 may include a first reflecting portion 117a positioned on the pad portion 115a and a second reflecting portion 117b positioned on the electrode portion 115b. For example, the ohmic layer 1151, the electrode layer 1152, the wire bonding layer 1153, the junction electrode layer 1154, and the reflective electrode layer 117 are sequentially disposed at portions corresponding to the pad portion 115a and the electrode portion 115b. Can be formed. According to this, the electrode 115 and the reflective electrode layer 117 can be formed using the same mask, or the electrode 115 and the reflective electrode layer 117 can be patterned together by one patterning, so that the process can be simplified. There is.

However, since the embodiment is not limited thereto, the modification will be described with reference to FIG. 3. Referring to FIG. 3 together with FIG. 1, the reflective electrode layer 117 may be formed only on the electrode portion 115b. For example, in the portion corresponding to the electrode portion 115b, the ohmic layer 1151, the electrode layer 1152, the wire bonding layer 1153, the junction electrode layer 1154, and the reflective electrode layer 117 are sequentially formed, and the pad portion ( In the portion corresponding to 115a, an ohmic layer 1151, an electrode layer 1152, and a wire bonding layer 1153 may be sequentially formed. According to this, the junction electrode layer 1154 and the reflective electrode layer 117 can be omitted in the pad portion 115a, so that the amount of material used can be reduced.

Referring back to FIG. 1, a passivation layer 180 may be formed on at least a side of the light emitting structure layer 135. In addition, the passivation layer 180 may be formed on the top surface of the first conductivity type semiconductor layer 110 and the top surface of the protection member 140, but is not limited thereto.

Hereinafter, the light emitting device according to the second and third embodiments will be described in more detail with reference to FIGS. 4 and 5. The same or extremely similar parts as described above will be omitted in detail, and only different parts will be described in detail.

4 is a cross-sectional view of the light emitting device according to the second embodiment.

Referring to FIG. 4, in the present exemplary embodiment, the upper surface of the electrode 115, that is, the lower surface of the reflective electrode layer 117 may have a pattern corresponding to the light extraction pattern 112. This is because a pattern corresponding to the light extraction pattern 112 is naturally formed on the upper surface of the electrode 115 by the light extraction pattern 112 of the first conductivity type semiconductor layer 110. In this embodiment, a separate process for smoothing the top surface of the electrode 115 may not be added, thereby simplifying the manufacturing process.

5 is a cross-sectional view of a light emitting device according to a third embodiment.

Referring to FIG. 5, in the present embodiment, the conductive light transmitting layer 119 is further formed on the reflective electrode layer 117. The conductive light transmitting layer 119 may have a transmittance of 50% or more so as not to interfere with light transmission.

In addition, the conductive light transmitting layer 119 may include an oxide. Accordingly, the conductive light transmitting layer 119 may serve to prevent the reflective electrode layer 117 from being damaged or corroded on the reflective electrode layer 117.

Although the upper and lower surfaces of the reflective electrode layer 117 are illustrated as being planar in the drawing, the embodiment is not limited thereto.

Hereinafter, the manufacturing method of the light emitting element which concerns on an Example is demonstrated in detail. The same or very similar contents to those described above will be omitted or briefly described.

6 to 15 are cross-sectional views illustrating steps of a method of manufacturing a light emitting device according to the embodiment.

As shown in FIG. 6, the light emitting structure layer 135 is formed on the growth substrate 101.

The growth substrate 101 may include, for example, at least one of sapphire (Al 2 O 3 ), Si, SiC, GaAs, GaN, ZnO, MgO, GaP, InP, and Ge. However, the embodiment is not limited thereto, and the growth substrate 101 made of various materials may be used.

The light emitting structure layer 135 may be formed by sequentially growing the first conductive semiconductor layer 110, the active layer 120, and the second conductive semiconductor layer 130 on the growth substrate 101.

The light emitting structure layer 135 may include, for example, metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), and plasma-enhanced chemical vapor deposition (PECVD). It may be formed using a method such as molecular beam growth (MBE), hydride vapor phase growth (HVPE) and the like. However, this is not limitative.

Meanwhile, a buffer layer and / or an undoped nitride layer (not shown) may be formed between the light emitting structure layer 135 and the growth substrate 101 to alleviate the lattice constant difference.

Subsequently, as illustrated in FIG. 7, the protection member 140 may be selectively formed on the light emitting structure layer 135 corresponding to the unit chip region. The protection member 140 may be formed around the unit chip area by using the patterned mask. The protective member 140 may be formed using various deposition methods such as electron beam (E-beam) deposition, sputtering, and PECVD.

Subsequently, as shown in FIG. 8, the current blocking layer 145 may be formed on the second conductivity-type semiconductor layer 130. The current blocking layer 145 may be formed using a mask pattern.

In FIGS. 7 and 8, the protection member 140 and the current blocking layer 145 are formed in separate processes, but the protection member 140 and the current blocking layer 145 are formed of the same material. It is also possible to form at the same time. For example, after forming the SiO 2 layer on the second conductivity-type semiconductor layer 130, the protective member 140 and the current blocking layer 145 may be simultaneously formed using a mask pattern.

Subsequently, as shown in FIG. 9, the ohmic layer 150 and the reflective layer 160 may be sequentially formed on the second conductivity-type semiconductor layer 130 and the current blocking layer 145.

The ohmic layer 150 and the reflective layer 160 may be formed by, for example, any one of electron beam (E-beam) deposition, sputtering, and PECVD.

Next, as shown in FIGS. 10 and 11, the conductive support substrate 175 is bonded to the structure of FIG. 5 through the bonding layer 170. The bonding layer 170 may be in contact with the reflective layer 160, the end of the ohmic layer 150, and the protective member 140 to strengthen the adhesive force therebetween.

In the above-described embodiment, although the conductive support substrate 175 is illustrated as being bonded through the bonding layer 170, the conductive support substrate 175 is plated or deposited without forming the bonding layer 170. It is also possible to form in a manner.

Next, as shown in FIG. 12, the growth substrate 101 is removed from the light emitting structure layer 135. 12 illustrates the structure shown in FIG. 11 upside down.

The growth substrate 101 may be removed by a laser lift off method or a chemical lift off method.

Subsequently, as shown in FIG. 13, the light emitting structure layer 135 is isolated by a plurality of light emitting structure layers 135 by isolation etching according to the unit chip region. For example, the isolation etching may be performed by a dry etching method such as inductively coupled plasma (ICP).

Subsequently, as illustrated in FIG. 14, the passivation layer 180 is formed on the protective member 140 and the light emitting structure layer 135, and the passivation layer (ie, the upper surface of the first conductivity-type semiconductor layer 110 is exposed). Selectively remove 180). The light extraction pattern 112 is formed on the upper surface of the first conductivity type semiconductor layer 110 to improve light extraction efficiency. The light extraction pattern 112 may be formed by a wet etching process or a dry etching process.

Subsequently, as shown in FIG. 15, the electrode 115 and the reflective electrode layer 117 are formed on the light extraction pattern 112 and separated into unit chip regions through a chip separation process.

The electrode 115 and the reflective electrode layer 117 may be formed by a method such as sputtering or electron beam deposition. The electrode 115 and the reflective electrode layer 117 may be formed using the same mask, or may be formed by patterning together the layers constituting the electrode 115 and the reflective electrode layer 117.

The chip separation process may include, for example, a breaking process of separating a chip by applying a physical force using a blade, a laser scrubbing process of separating a chip by irradiating a laser to a chip boundary, and etching including wet or dry etching. Process and the like. The embodiment is not limited thereto.

Hereinafter, a light emitting device package including a light emitting device according to the present embodiment will be described with reference to FIG. 16. 16 is a cross-sectional view of a light emitting device package including a light emitting device according to the embodiment.

Referring to FIG. 16, the light emitting device package according to the embodiment includes a package body 30, a first electrode layer 31 and a second electrode layer 32 provided on the package body 30, and the package body 30. The light emitting device 100 is installed at and electrically connected to the first and second electrode layers 31 and 32, and a molding member 40 surrounding the light emitting device 100.

The package body 30 may be formed of a resin such as polyphthal amide (PPA), liquid crystal polymer (LCP), polyamide 9T (polyamid9T, PA9T), metal, photo sensitive glass, sapphire ( Al 2 O 3 ), ceramics, and printed circuit boards (PCBs). However, the present embodiment is not limited to these materials.

The package body 30 is formed with a cavity 34 whose top is opened. The sides of the cavity 34 may be perpendicular or inclined to the bottom surface of the cavity 34.

In the package body 30, a first electrode layer 31 and a second electrode layer 32 electrically connected to the light emitting device 100 are disposed. The first electrode layer 31 and the second electrode layer 32 may be formed of a metal plate having a predetermined thickness, and another metal layer may be plated on this surface. The first electrode layer 31 and the second electrode layer 32 may be made of a metal having excellent conductivity. Such metals include titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), and the like. There is this.

The first and second electrode layers 31 and 32 provide power to the light emitting device 100. In addition, the first and second electrode layers 31 and 32 may serve to increase light efficiency by reflecting light generated from the light emitting device 100, and discharge heat generated from the light emitting device 100 to the outside. It can also play a role.

The light emitting device 100 is positioned in the cavity 34 while being electrically connected to the first electrode layer 31 and the second electrode layer 32. The light emitting device 100 may be electrically connected to the first electrode layer 31 and the second electrode layer 32 by any one of a wire method, a flip chip method, or a die bonding method. In the embodiment, the light emitting device 100 is electrically connected to the first electrode layer 31 through the wire 50 and directly connected to the second electrode layer 32.

The molding member 40 may be formed while surrounding the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 40 may include a phosphor to change the wavelength of light emitted from the light emitting device 100.

In the present embodiment, a reflective electrode layer (reference numeral 117 of FIG. 1, hereinafter identical) is provided on an electrode (reference numeral 115 of FIG. 1, hereinafter the same) of the light emitting device 100. Therefore, the reflective electrode layer 117 reflects the light emitted from the light emitting device 100 and then refracted in the molding member 40 toward the light emitting device 100 to improve the efficiency of the light emitting device package.

In the above description and drawings, the phosphor is included in the molding member 40, so that the phosphor is positioned on the light emitting device 100, but the present invention is not limited thereto. That is, the phosphor may be positioned on the light emitting device 100 by forming a layer containing the phosphor on the upper surface of the light emitting device 100.

Hereinafter, the light emitting device package according to the embodiment will be described in more detail with reference to the experimental example. This experimental example is only an example for clarity, and the embodiment is not limited thereto.

Experimental Example  One

a second conductive type including a first conductive semiconductor layer including an n-type gallium nitride (GaN) and a nitrogen-facing surface, an active layer in which an InGaN well layer / AlGaN barrier layer is sequentially stacked, and a p-type gallium nitride (GaN) The light emitting structure layer including the semiconductor layer was formed. A light emitting device was manufactured by forming a reflective electrode layer including Ag and an electrode having a stacked structure of Ni / Cu / Ni / Au on a nitrogen facing surface of the first conductive semiconductor layer. In this manner, all ten light emitting device samples were manufactured.

Experimental Example  2

Ten light emitting device samples of Experimental Example 1 were molded using a molding member to prepare ten light emitting device package samples.

Comparative example  One

10 light emitting device samples were manufactured in the same manner as in Experiment 1, except that the reflective electrode layers were formed.

Comparative example  2

Ten light emitting device package samples were manufactured in the same manner as in Experimental Example 2 except that the reflective electrode layers were formed.

The light output of the samples according to Experimental Examples 1 and 2 and Comparative Examples 1 and 2 were measured and shown in FIG. 17.

The light emitting device samples of Experimental Example 1 are similar in light output to the light emitting device samples of Comparative Example 1, but the light emitting device package samples of Experimental Example 2 have a higher light output than the light emitting device samples of Comparative Example. Can be. That is, it can be seen that the light emitting device package of the present embodiment can improve efficiency by reflection in the reflective electrode layer.

The light emitting device package according to the above-described embodiments and modifications may function as a lighting system such as a backlight unit, an indicator device, a lamp, and a street lamp. This will be described with reference to FIGS. 18 and 19.

18 is a view illustrating a backlight unit including a light emitting device package according to an embodiment. However, the backlight unit 1100 of FIG. 18 is an example of an illumination system, and is not limited thereto.

Referring to FIG. 18, the backlight unit 1100 may be disposed on a bottom cover 1140, a light guide member 1120 disposed in the bottom cover 1140, and at least one side or a bottom surface of the light guide member 1120. The light emitting module 1110 may be included. In addition, a reflective sheet 1130 may be disposed under the light guide member 1120.

The bottom cover 1140 may be formed in a box shape having an upper surface open to accommodate the light guide member 1120, the light emitting module 1100, and the reflective sheet 1130, and may be formed of metal or resin. Can be. However, the present invention is not limited thereto.

The light emitting module 1110 may include a plurality of light emitting device packages 600 mounted on the substrate 700. The plurality of light emitting device packages 600 provides light to the light guide member 1120.

As shown, the light emitting module 1110 may be disposed on at least one of the inner surfaces of the bottom cover 1140, thereby providing light toward at least one side of the light guide member 1120. .

However, the light emitting module 1110 may be disposed under the light guide member 1120 in the bottom cover 1140 to provide light toward the bottom surface of the light guide member 1120. This may be variously modified according to the design of the backlight unit 1100.

The light guide member 1120 may be disposed in the bottom cover 1140. The light guide member 1120 may surface-light the light provided from the light emitting module 1110 and guide the light guide member to a display panel (not shown).

The light guide member 1120 may be, for example, a light guide panel (LGP). The light guide plate may be, for example, an acrylic resin such as polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), a cyclic olefin copolymer (COC), or a polycarbonate (PC). It may be formed of one of polyethylene naphthalate resin.

The optical sheet 1150 may be disposed above the light guide member 1120.

The optical sheet 1150 may include at least one of, for example, a diffusion sheet, a light collecting sheet, a luminance rising sheet, and a fluorescent sheet. For example, the optical sheet 1150 may be formed by stacking a diffusion sheet, a light collecting sheet, a luminance rising sheet, and a fluorescent sheet. In this case, the diffusion sheet 1150 evenly diffuses the light emitted from the light emitting module 1110, and the diffused light may be focused onto a display panel (not shown) by the light collecting sheet. At this time, the light emitted from the light collecting sheet is light that is randomly polarized. The luminance rising sheet can increase the degree of polarization of light emitted from the light collecting sheet. The light collecting sheet can be, for example, a horizontal or / and vertical prism sheet. In addition, the brightness rising sheet may be, for example, a dual brightness enhancement film. In addition, the fluorescent sheet may be a translucent plate or film containing phosphors.

The reflective sheet 1130 may be disposed under the light guide member 1120. The reflective sheet 1130 may reflect light emitted through the lower surface of the light guide member 1120 toward the exit surface of the light guide member 1120. The reflective sheet 1130 may be formed of a resin having good reflectance, for example, PET, PC, poly vinyl chloride, resin, or the like, but is not limited thereto.

19 is a view illustrating a lighting unit including a light emitting device package according to an embodiment. However, the lighting unit 1200 of FIG. 19 is an example of a lighting system, but is not limited thereto.

Referring to FIG. 19, the lighting unit 1200 includes a case body 1210, a light emitting module 1230 installed in the case body 1210, and a connection terminal installed in the case body 1210 and receiving power from an external power source. 1220.

The case body 1210 is preferably formed of a material having good heat dissipation, for example, may be formed of a metal or a resin.

The light emitting module 1230 may include a substrate 700 and at least one light emitting device package 600 mounted on the substrate 700.

The substrate 700 may be a circuit pattern printed on the insulator, for example, a printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, and the like. It may include.

In addition, the substrate 700 may be formed of a material that efficiently reflects light, or the surface may be formed of a color in which the light is efficiently reflected, for example, white, silver, or the like.

At least one light emitting device package 600 may be mounted on the substrate 700.

Each of the light emitting device packages 600 may include at least one light emitting diode (LED). The light emitting device may include a colored light emitting device for emitting colored light of red, green, blue or white color, and a UV light emitting device for emitting ultraviolet light (UV, UltraViolet).

The light emitting module 1230 may be arranged to have a combination of various light emitting devices to obtain color and luminance. For example, the white light emitting device, the red light emitting device, and the green light emitting device may be combined to secure high color rendering (CRI). In addition, a fluorescent sheet may be further disposed on a traveling path of light emitted from the light emitting module 1230, and the fluorescent sheet changes the wavelength of light emitted from the light emitting module 1230. For example, when the light emitted from the light emitting module 1230 has a blue wavelength band, the fluorescent sheet may include a yellow phosphor, and the light emitted from the light emitting module 1230 may be finally viewed as white light after passing through the fluorescent sheet. do.

The connection terminal 1220 may be electrically connected to the light emitting module 1230 to supply power. According to FIG. 19, the connection terminal 1220 is inserted into and coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1220 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by wiring.

In the lighting system as described above, at least one of a light guide member, a diffusion sheet, a light collecting sheet, a luminance rising sheet, and a fluorescent sheet may be disposed on a propagation path of light emitted from the light emitting module to obtain a desired optical effect.

As described above, the lighting system includes a light emitting device package having excellent voltage characteristics, and thus may have excellent light efficiency and characteristics.

The features, structures, effects and the like described in the foregoing embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. In addition, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be construed as limiting the scope of the present invention. It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments may be modified. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

Claims (14)

Conductive support substrates;
A light emitting structure layer including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer on the conductive support substrate;
An electrode on the light emitting structure layer; And
Reflective electrode layer on the electrode
Light emitting device comprising a. The method of claim 1,
The reflective electrode layer includes at least one of Ag, Al, Rh, Pt or alloys thereof. The method of claim 1,
The electrode includes a pad portion and an electrode portion extending from the pad portion,
The reflective electrode layer is formed on the pad portion and the electrode portion. The method of claim 1,
The electrode includes a pad portion and an electrode portion extending from the pad portion,
The reflective electrode layer is formed on the electrode portion. The method of claim 1,
The light emitting device of which the thickness of the reflective electrode layer is 5nm to 10㎛. The method of claim 1,
The electrode includes a junction electrode layer including at least one of Ti, Ni, or an alloy thereof while contacting the reflective electrode layer. The method of claim 1,
A light emitting device in which a light extraction pattern is formed at an interface between the first conductive semiconductor layer and the electrode. The method of claim 1,
The upper surface of the first conductivity type semiconductor layer includes a light extraction pattern. The method of claim 1,
The light emitting device of any one of the upper surface and the lower surface of the reflective electrode layer. 10. The method of claim 9,
A lower surface of the reflective electrode layer includes a light extraction pattern. The method of claim 1,
And a current blocking layer disposed between the conductive support substrate and the light emitting structure layer, the current blocking layer overlapping at least a portion in a vertical direction with the electrode. The method of claim 1,
A light emitting device comprising a conductive light transmitting layer on the reflective electrode layer. Package body;
A first electrode layer and a second electrode layer provided on the package body; And
Light emitting device electrically connected to the first electrode layer and the second electrode layer
Including;
The light emitting device, the conductive support substrate; A light emitting structure layer including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer on the conductive support substrate; An electrode on the light emitting structure layer; And a reflective electrode layer on the electrode. The method of claim 13,
A light emitting device package in which a phosphor is located on the light emitting device.
KR1020100084299A 2010-08-30 2010-08-30 Light emitting device and light emitting device package KR20120020599A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106025034A (en) * 2015-03-26 2016-10-12 Lg伊诺特有限公司 Light emitting device and light emitting device package including the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106025034A (en) * 2015-03-26 2016-10-12 Lg伊诺特有限公司 Light emitting device and light emitting device package including the same
CN106025034B (en) * 2015-03-26 2020-04-03 Lg伊诺特有限公司 Light emitting device and light emitting device package including the same

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