KR101786081B1 - Light emitting device and light emitting device package - Google Patents

Abstract

The light emitting device according to an embodiment includes a support substrate, a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer on the support substrate And an electrode having a first contact portion which is in contact with at least a second upper surface concave in the direction of the active layer from the first upper surface of the first conductive type semiconductor layer.

Description

[0001] LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE [0002]

Embodiments relate to a light emitting device and a light emitting device package.

Light emitting diodes (LEDs) are a type of semiconductor devices that convert electrical energy into light. Light emitting diodes have advantages of low power consumption, semi-permanent lifetime, fast response speed, safety, and environmental friendliness compared with conventional light sources such as fluorescent lamps and incandescent lamps.

Therefore, much research has been conducted to replace an existing light source with a light emitting diode, and there is an increasing tendency to use a light emitting element as a light source for various lamps, liquid crystal display devices, electric sign boards, to be.

Embodiments provide a light emitting device and a light emitting device package having a new structure.

In addition, the embodiment provides a light emitting device and a light emitting device package that reduce the operating voltage.

In addition, the embodiment provides a light emitting device and a light emitting device package that maximize an area of an electrode contacting a light emitting structure layer.

An embodiment includes a support substrate; A light emitting structure layer including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer on the supporting substrate; And an electrode having a first contact portion which is in contact with at least a second upper surface concave in the direction of the active layer from the first upper surface of the first conductivity type semiconductor layer.

The embodiment also includes a package body; A first electrode layer and a second electrode layer provided on the package body; And a light emitting element electrically connected to the first electrode layer and the second electrode layer, wherein the light emitting element comprises: a support substrate; A light emitting structure layer including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer on the supporting substrate; And an electrode having a first contact portion which is in contact with at least a second upper surface recessed in a direction from the first upper surface of the first conductivity type semiconductor layer toward the active layer.

The embodiment can reduce the operating voltage of the light emitting device by forming a double structure maximizing the area of the electrode contacting the nitrogen facing surface (N-face n-GaN) of the light emitting structure layer.

Meanwhile, various other effects will be directly or implicitly disclosed in the detailed description according to the embodiment of the present invention to be described later.

1 is a sectional view of a light emitting device according to a first embodiment;
FIG. 2 illustrates an example of a planar shape of an electrode in a light emitting device according to an embodiment; FIG.
3 is a cross-sectional view of an electrode in a light emitting device according to an embodiment;
4 is a view showing another example of the shape of the electrode on the cross section in the light emitting device according to the embodiment;
5 is a view showing another example of the shape of the electrode on the cross section in the light emitting device according to the embodiment;
6 is a sectional view of a light emitting device according to a second embodiment;
FIGS. 7 to 14 are views for explaining a method of manufacturing the light emitting device according to the first embodiment; FIGS.
15 is a sectional view of a light emitting device package including a light emitting device according to an embodiment;
16 is a schematic view of a backlight unit including a light emitting device or a light emitting device package according to the embodiment;
17 is a configuration diagram of a lighting unit including the light emitting device or the light emitting device package according to the embodiment.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear. The following terms are defined in consideration of the functions of the present invention, and may be changed according to the intentions or customs of the user, the operator, and the like. Therefore, the definition should be based on the contents throughout this specification.

Also, in the description of the embodiments, it is to be understood that each layer (film), area, pattern or structure may be referred to as being "on" or "under" ) "Includes both those formed directly or through another layer. The criteria for top / bottom or bottom / bottom of each layer are described with reference to the drawings.

The thickness or the size of each layer (film), region, pattern or structure in the drawings may be modified for clarity and convenience of explanation, and thus does not entirely reflect the actual size.

Hereinafter, a light emitting device, a light emitting device manufacturing method, a light emitting device package, and an illumination system according to embodiments will be described with reference to the accompanying drawings.

1 is a cross-sectional view of a light emitting device according to a first embodiment.

1, a light emitting device 100 according to an embodiment of the present invention includes a support substrate 180, a light emitting structure layer 135 for generating light on the support substrate 180, And an electrode 115 is provided.

The light emitting structure layer 135 includes a first conductive semiconductor layer 110, an active layer 120 and a second conductive semiconductor layer 130. The first conductive semiconductor layer 110 and the second conductive semiconductor layer 130 Electrons and holes provided from the conductive semiconductor layer 130 may be recombined in the active layer 120 to generate light.

A bonding layer 170, a reflective layer 160, an ohmic layer 150, a channel layer 140, a current blocking layer 145, and the like may be disposed between the supporting substrate 180 and the light emitting structure layer 135, A passivation layer 190 may be formed on a side surface of the light emitting structure layer 135. This will be described in more detail as follows.

The supporting substrate 180 supports the light emitting structure layer 135 and may supply power to the light emitting structure layer 135 together with the electrode 115. The supporting substrate 180 may be a conductive supporting substrate including at least one of Cu, Au, Ni, Mo, Cu-W, Si, Ge, GaAs, ZnO, and SiC. However, the embodiment is not limited to this, and it is also possible to use an insulating substrate instead of the conductive supporting substrate and to form a separate electrode.

The support substrate 180 may have a thickness of 30 to 500 탆. However, it should be apparent to those skilled in the art that the embodiment is not limited thereto and may vary depending on the design of the light emitting device 100.

A bonding layer 170 may be formed on the supporting substrate 180. The bonding layer 170 may be formed as a bonding layer or a seed layer under the reflective layer 160 and the channel layer 140. The bonding layer 170 is exposed to the outer surface and contacts the reflective layer 160, the end of the ohmic layer 150 and the channel layer 140 to form the reflective layer 160, the ohmic layer 150, and the channel layer 140 ) Can be strengthened.

The bonding layer 170 includes a barrier metal or a bonding metal. For example, the bonding layer 170 may be formed of a metal such as Cu, Ni, Ag, Mo, Al, Au, Nb, W, Ti, Cr, Ta, Al, Pd, Pt, Si, Al- Cu, Sb, Al-Zn, Al-Mg, Al-Ge, Pd-Pb, Ag-Sb, Au-In, Al-Cu-Si, Ag-Cd- Ag-Cu-Zn, Au-Si, Au-Ge, Au-Ni, Au-Cu, Au-Ag-Cu, , Cu-Zn, Cu-P, Ni-P, Ni-Mn-Pd, Ni-P and Pd-Ni.

A reflective layer 160 may be formed on the bonding layer 170. The reflection layer 160 reflects light generated in the light emitting structure layer 135 and directed toward the reflection layer 160 to improve the luminous efficiency of the light emitting device 100.

The reflective layer 160 may include at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf and alloys thereof. The reflective layer 160 may be formed of any one of the above-mentioned metals or alloys, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium tin a transparent conductive material such as indium gallium oxide (ITO), indium gallium zinc oxide (IGZO), aluminum zinc oxide (AZO), or antimony tin oxide (ATO). For example, the reflective layer 160 may include a layered structure of IZO / Ni, AZO / Ag, IZO / Ag / Ni, AZO / Ag / Ni, Ag / Cu and Ag / Pd / Cu.

The ohmic layer 150 may be formed on the reflective layer 160. The ohmic layer 150 may be in ohmic contact with the second conductive semiconductor layer 130 to supply power to the light emitting structure layer 135 smoothly. The ohmic layer 150, ITO, IZO, IZTO, IAZO , IGZO, IGTO, AZO, ATO, GZO (gallium zinc oxide), IrO x, RuO x, RuO x / ITO, Ni, Ag, Pt, Ni / IrO _x / Au, or Ni / IrO _x / Au / ITO.

Although the upper surface of the reflective layer 160 is in contact with the ohmic layer 150 in the present embodiment, the reflective layer 160 may be in contact with the channel layer 140 or the light emitting structure layer 135 will be.

A current blocking layer 145 may be formed on the inner side between the ohmic layer 150 and the second conductive semiconductor layer 130. And the current blocking layer 145 includes _{ZnO, SiO 2, SiON, Si} 3 N 4, Al 2 O 3, TiO 2, Ti, Al, at least one of Cr. The upper surface of the current blocking layer 145 is in contact with the second conductivity type semiconductor layer 130 and the lower surface and the side surface of the current blocking layer 145 are in contact with the ohmic layer 150.

The current blocking layer 145 may be formed so as to overlap at least a part of the current blocking layer 145 in the vertical direction with respect to the electrode 115. Accordingly, the phenomenon that current is concentrated at the shortest distance between the electrode 115 and the supporting substrate 180 is alleviated So that the luminous efficiency of the luminous means 100 can be improved.

Meanwhile, a channel layer 140 may be formed on the outer side between the bonding layer 170 and the second conductivity type semiconductor layer 130. That is, the channel layer 140 may be formed in a peripheral region between the light emitting structure layer 135 and the bonding layer 170, thereby forming a ring shape, a loop shape, a frame shape, or the like.

The channel layer 140 may be formed of a material having electrical conductivity lower than that of the reflective layer 160 or the bonding layer 170 or a material forming a Schottky contact with the second conductive semiconductor layer 130 . For example, the channel layer 140, ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, ZnO, SiO _2, SiO _x, SiO _x N _y, Si ₃ N _4, Al ₂ O ₃ , TiO _x , TiO ₂ , Ti, Al, or Cr.

The second conductive semiconductor layer 130 and the passivation layer 190 are in contact with the upper surface of the channel layer 140 and the ohmic layer 150 and the bonding layer 170 are formed on the lower surface and the side surface of the channel layer 140, Can be contacted.

In this embodiment, the ohmic layer 150 is in contact with the bottom surface and the side surface of the channel layer 140. However, the present invention is not limited thereto. Accordingly, the ohmic layer 150 and the channel layer 140 may be spaced apart from each other, or the ohmic layer 150 may be in contact with only the side surface of the channel layer 140. Also, the channel layer 140 may be formed between the reflective layer 160 and the ohmic layer 150.

In addition, the channel layer 140 may partially overlap the light emitting structure layer 135 in the vertical direction. The channel layer 140 may increase the distance between the bonding layer 170 and the active layer 120 to reduce the possibility of an electrical short circuit between the bonding layer 170 and the active layer 120. In addition, the channel layer 140 can prevent moisture and the like from penetrating into the gap between the light emitting structure layer 135 and the support substrate 180.

In addition, the channel layer 140 can prevent an electrical short circuit from occurring in the chip separation process. More specifically, when isolation etching is performed to separate the light emitting structure layer 135 into unit chip regions, the debris generated in the bonding layer 170 may be transferred to the second conductivity type semiconductor layer 130, And the active layer 120 or between the active layer 120 and the first conductive semiconductor layer 110 to cause an electrical short circuit. The channel layer 140 prevents such an electrical short circuit. Accordingly, the channel layer 140 may be formed of an insulating material that does not break or break when the isolation is etched, or that does not cause an electrical short circuit even if a small portion of the channel layer 140 is broken or a small amount of debris is generated.

A light emitting structure layer 135 may be formed on the ohmic layer 150 and the channel layer 140. The side surface of the light emitting structure layer 135 may be inclined by isolation etching that divides a plurality of chips into unit chip regions.

The light emitting structure layer 135 may include a plurality of Group III-V compound semiconductor layers, and may include a first conductive semiconductor layer 110, a second conductive semiconductor layer 130, And may include an active layer 120. At this time, the second conductive type semiconductor layer 130 is located on the ohmic layer 150 and the channel layer 140, the active layer 120 is located on the second conductive type semiconductor layer 130, The conductive semiconductor layer 110 may be located on the active layer 120.

A first conductivity type InGaN / GaN superlattice structure or an InGaN / InGaN superlattice structure (not shown) may be formed between the first conductive semiconductor layer 110 and the active layer 120. Also, a second conductive AlGaN layer (not shown) may be formed between the second conductive semiconductor layer 130 and the active layer 120.

The first conductive semiconductor layer 110 may include a compound semiconductor of a Group III-V element doped with the first conductive dopant. For example, the first conductivity type semiconductor layer 110 may include an n-type semiconductor layer. The n-type semiconductor layer is doped with an n-type dopant to a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y ? 1, . For example, n-type dopants such as Si, Ge, Sn, Se and Te can be formed on GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP and AlGaInP. The first conductive semiconductor layer 110 may be a single layer or a multilayer, but is not limited thereto.

The active layer 120 may be formed of any one of a single quantum well structure, a multi quantum well structure (MQW), a quantum dot structure, and a quantum wire structure. However, the present invention is not limited thereto.

The active layer 120 may be formed of a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? When the active layer 120 is formed of a multiple quantum well structure, the active layer 120 may be formed by stacking a plurality of well layers and a plurality of barrier layers. For example, the active layer 120 may be formed by alternately stacking a well layer including InGaN and a barrier layer including GaN.

A cladding layer (not shown) doped with an n-type or p-type dopant may be formed on and / or below the active layer 120, and the cladding layer may include an AlGaN layer or an InAlGaN layer. The band gap of the barrier layer may be larger than the band gap of the well layer, and the band gap of the cladding layer may be larger than the band gap of the active layer.

The second conductive semiconductor layer 130 may include a compound semiconductor of a Group III-V element doped with a second conductive dopant. For example, the second conductive semiconductor layer 130 may include a p-type semiconductor layer. This p-type semiconductor layer is doped with a p-type dopant to a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? . For example, a p-type dopant such as Mg, Zn, Ca, Sr, or Br may be included in GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP and AlGaInP. The second conductive semiconductor layer 130 may be a single layer or a multilayer, but is not limited thereto.

In this embodiment, the first conductive semiconductor layer 110 includes an n-type semiconductor layer and the second conductive semiconductor layer 130 includes a p-type semiconductor layer. However, the present invention is not limited thereto Do not. That is, the first conductive semiconductor layer 110 may include a p-type semiconductor layer, and the second conductive semiconductor layer 130 may include an n-type semiconductor layer. In addition, another n-type or p-type semiconductor layer (not shown) may be formed under the second conductive type semiconductor layer 130. Accordingly, the light emitting structure layer 135 may have at least one of np, pn, npn, and pnp junction structures.

In addition, the doping concentrations of the dopants in the first conductivity type semiconductor layer 110 and the second conductivity type semiconductor layer 130 may be uniform or non-uniform. That is, the structure of the light emitting structure layer 135 may be variously modified, but is not limited thereto.

A light extracting structure 111 may be formed on the upper surface of the light emitting structure layer 135. The light extracting structure 111 minimizes the amount of light totally reflected from the surface, thereby improving light extraction efficiency of the light emitting device 100. The light extracting structure 111 may have a random shape and arrangement, or may have a regular shape and arrangement. In this embodiment, the upper surface of the first conductive semiconductor layer 110 may be formed with a roughness pattern to increase the light extraction efficiency.

An electrode 115 is formed on the light emitting structure layer 135, more specifically, on the top surface of the first conductive semiconductor layer 110. The electrode 115 may be branched into a predetermined pattern, but the present invention is not limited thereto.

In addition, the electrode 115 may have a laminated structure in which at least one pad portion (not shown) and at least one electrode portion connected to the pad portion (not shown) are the same or different. Here, the pad portion (not shown) refers to a portion where wire bonding is performed on the electrode 115.

In the present embodiment, the electrode unit includes the external electrode 115a and the internal electrode 115b. However, it will be apparent to those skilled in the art that the electrode unit may be formed of only the external electrode 115a.

In addition, the cross section of the electrode 115 forms an I-shaped laminated structure. The electrode 115 is double-contacted with one surface of the first conductive semiconductor layer 110 to increase a contact area between the electrode and the first conductive semiconducting semiconductor layer 110. Accordingly, the electrode 115 can reduce the operating voltage of the light emitting device by supplying more current to the light emitting structure layer 135.

In addition, although the surface of the electrode 115 is planar, a roughness pattern may be formed on the surface of the electrode 115, but the present invention is not limited thereto. The specific shape of the electrode 115 will be described below.

The electrode 115 may be formed of one of Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rh, Ir, W, Ti, Ag, Cr, Mo, Nb, And at least one of these alloys.

A passivation layer 190 may be formed on at least one side of the light emitting structure layer 135. The passivation layer 190 may be formed on the upper surface of the first conductive semiconductor layer 110 and the upper surface of the channel layer 140, but the present invention is not limited thereto.

The passivation layer 190 may be formed to electrically protect the light emitting structure layer 135, for example, as SiO _2, SiO _x, SiO _x N _y, Si ₃ N _4, Al ₂ O ₃ But the present invention is not limited thereto.

Fig. 2 shows an example of a planar shape of the electrode in the light emitting device according to the embodiment. FIG. 1 is a cross-sectional view taken along line I-I 'of FIG.

1 and 2, the electrode 115 is formed on the first conductive semiconductor layer 110, and includes at least one pad portion 115c, and at least one pad portion 115c An external electrode 115a extending along the periphery of the upper surface of the first conductive semiconductor layer 110 and an internal electrode 115a connecting the first portion of the external electrode 115a and the second portion of the external electrode 115a 115b.

At least a portion of the external electrode 115a may be formed within 50 占 퐉 from the outermost portion of the upper surface of the first conductive semiconductor layer 110. The external electrode 115a may contact the passivation layer 180 It is possible.

For example, the pad portion 115c includes two pad portions and is disposed at an edge portion of the external electrode 115a. However, the positions of the first pad portion 115c1 and the second pad portion 115c2 are merely an example of the planar shape of the electrode, but are not limited thereto.

The external electrode 115a may be arranged in a rectangular shape having four sides and four vertexes and may include external electrodes extending in a first direction and external electrodes extending in a second direction perpendicular to the first direction do. At least a portion of the external electrode may be disposed within 50 [mu] m from the outermost portion of the upper surface of the first conductive type semiconductor layer 110. [

The internal electrode 115b includes a first internal electrode 115b extending in the second direction and connecting an external electrode extending in the first direction and an external electrode. Although one internal electrode 115b is illustrated in this embodiment, it is not limited thereto.

3 shows an example of a shape on a cross section of an electrode in the light emitting device according to the embodiment.

Referring to FIG. 3, the electrode 115 includes at least one pad portion (not shown) and at least one electrode portion 115a, 115b extending from the at least one pad portion.

The electrode portions 115a and 115b are formed on the first conductivity type semiconductor layer 110 and include an external electrode 115a extending along the periphery of the top surface of the first conductivity type semiconductor layer 110, And an internal electrode 115b connecting the first portion of the electrode 115a and the second portion of the external electrode 115a.

As shown in FIG. 3, the cross section of the electrode 115 forms an I-shaped stacked structure. One surface of the first conductivity type semiconductor layer 110 that is in contact with the lower surface of the electrode 115 is referred to as N-face n-GaN (hereinafter referred to as "nitrogen facing surface", F ₁ , F ₂ ) , One surface of the first conductivity type semiconductor layer 110 which contacts the upper surface of the electrode 115 is referred to as Ga-face n-GaN (hereinafter referred to as "gallium facing surface", F ₃ ).

The electrode 115a includes a first contact portion 112a formed in the first conductive semiconductor layer 110, a second contact portion 113a formed on the first conductive semiconductor layer 110, And a third contact portion 114a connecting the first contact portion 112a and the second contact portion 113a. That is, the first contact portion 112a, the second contact portion 113a, and the third contact portion 114a are integrally formed to form a double laminated structure.

Specifically, the first contact portion 112a is disposed in a first region that is recessed from the upper surface of the first conductive semiconductor layer 110 in the direction of the active layer 120. The lower surface of the first contact portion 112a contacts the first nitrogen facing surface F _{1 of} the first conductive type semiconductor layer 110 and the upper surface of the first contact portion 112a contacts the first nitrogen- And contacts the gallium-facing surface (F ₃ ) of the layer (110). The surface of the first contact portion (112a) in contact with said first nitrogen-facing surface (F ₁₎ has a roughness pattern can be formed. This shape increases the contact area between the first contact portion 112a and the first conductive type semiconductor layer 110 to supply more current to the light emitting structure layer 135. [

The second contact portion 113a is connected to the first contact portion 112a and is disposed in a second region convexly formed on the first conductive type semiconductor layer 110. [ The second contact portion (113a) is in contact with the second nitrogen-facing surface (F ₂₎ on the first conductive semiconductor layer 110. A surface of the second contact portion (113a) in contact with the second nitrogen-facing surface (F _2), there can be formed a roughness pattern.

The width of the first contact portion 112a may be greater than the width of the second contact portion 113a. However, the present invention is not limited thereto, and the width of the first contact portion 112a and the width of the second contact portion 113a may be the same.

The third contact portion 114a connects between the first contact portion 112a and the second contact portion 113a and is smaller than the width of at least one of the first contact portion 112a and the second contact portion 113a . Accordingly, the first conductive semiconductor layer 110 is formed on at least a portion between the first contact portion 112a and the second contact portion 113a.

In this embodiment, the cross section of the first contact portion 112a, the second contact portion 113a, and the third contact portion 114a is illustrated as a rectangular shape, but the present invention is not limited thereto. Shape. For example, as shown in FIG. 4, the distinction between the first contact portion 112a and the third contact portion 114a may not be clear, and the shape of the first contact portion may be a triangular, polygonal, or irregular shape . In addition, although the electrode 115 has an I-shaped double structure, it is not limited thereto, and may be a shape having a multiple structure of three or more.

On the other hand, as shown in FIG. 5, a light extracting structure similar to the top surface of the light emitting structure layer 135 may be formed on the top surface of the electrode 115. Here, as an example of the light extracting structure, a roughness pattern may be formed.

6 is a cross-sectional view of a light emitting device according to a second embodiment.

6, the light emitting device 600 according to the present embodiment includes a support substrate 690, a light emitting structure layer 635 that generates light on the support substrate 690, a light emitting structure layer 635, Gt; 615 < / RTI > The light emitting structure layer 635 includes a first conductivity type semiconductor layer 610, an active layer 620 and a second conductivity type semiconductor layer 630. The first conductivity type semiconductor layer 610 and the second Electrons and holes provided from the conductive type semiconductor layer 630 are recombined in the active layer 620 to generate light.

A bonding layer 680, a barrier layer 670, a reflective layer 660, an ohmic layer 650, a channel layer 640, a current blocking layer 645, and the like are formed between the supporting substrate 690 and the light emitting structure layer 635 And a passivation layer 695 may be formed on the side of the light emitting structure layer 635. [

The supporting substrate 690 supports the light emitting structure layer 635 and may supply power to the light emitting structure layer 635 together with the electrode 615. A bonding layer 680 may be formed on the supporting substrate 690. The bonding layer 680 may contact the barrier layer 670 and the support substrate 690 to enhance adhesion between the barrier layer 670 and the support substrate 690.

On the other hand, a barrier layer 670 may be formed on the bonding layer 680. The barrier layer 670 is a diffusion barrier layer and is in contact with the reflective layer 660 and the bonding layer 680 to prevent diffusion between the reflective layer 660 and the bonding layer 680 do. At least a portion of the channel layer 640, the ohmic layer 650, and the reflective layer 660 may be formed on the barrier layer 670.

A reflective layer 660 may be formed on the barrier layer 670. The reflective layer 660 reflects light generated in the light emitting structure layer 635 toward the reflective layer 660 to improve the light emitting efficiency of the light emitting device 600.

An ohmic layer 650 may be formed on the reflective layer 660. The ohmic layer 650 is in ohmic contact with the second conductive semiconductor layer 630 so that power can be smoothly supplied to the light emitting structure layer 635.

A current blocking layer 645 is formed on the inner side between the ohmic layer 650 and the second conductivity type semiconductor layer 630 and the current blocking layer 645 is formed between the ohmic layer 650 and the second conductivity type semiconductor layer 630 And a channel layer 640 may be formed on the outer side.

A light emitting structure layer 635 may be formed on the ohmic layer 650 and the channel layer 640 and an electrode may be formed on the light emitting structure layer 635. Since the structures of the light emitting structure layer 635 and the electrode 615 are the same as those described in the first embodiment, a detailed description thereof will be omitted.

7 to 14 are views for explaining a method of manufacturing the light emitting device according to the first embodiment.

Referring to FIG. 7, a light emitting structure layer 135 is formed on a growth substrate 101.

The growth substrate 101 may be formed of at least one of, for example, sapphire (Al ₂ O ₃ ), SiC, GaAs, GaN, ZnO, Si, GaP, InP and Ge. For example, the growth substrate 101 grows the light emitting structure layer 135, and the sapphire substrate may be used.

The light emitting structure layer 135 may be formed by successively growing the first conductive semiconductor layer 110, the active layer 120, and the second conductive semiconductor layer 130 on the growth substrate 101 .

The light emitting structure layer 135 may be formed using a metal organic chemical vapor deposition (MOCVD) method, a chemical vapor deposition (CVD) method, a plasma enhanced chemical vapor deposition (PECVD) method, Molecular beam epitaxy (MBE), or hydride vapor phase epitaxy (HVPE), but the present invention is not limited thereto.

In the process of growing the first conductive semiconductor layer 110, a mask layer M is grown in the first conductive semiconductor layer 110. Specifically, a thin film L ₁ of the first conductivity type semiconductor layer 110 is formed on the growth substrate 101, and then the mask layer M is grown thereon. Here, the mask layer M may be formed on the first conductive semiconductor layer 130 using a mask pattern, and an oxide based material may be used. In addition, a roughness pattern may be formed on the upper surface of the mask layer 113. Thereafter, the first conductive semiconductor layer 110, L ₂ is grown on the mask layer M.

A buffer layer (not shown) and / or an unshown semiconductor layer (not shown) may be formed between the light emitting structure layer 135 and the growth substrate 101 to mitigate the lattice constant difference. For example, the undoped nitride layer may be formed of an undoped-GaN layer. For example, the undoped nitride layer may be formed of an undoped-GaN layer. . A buffer layer may be formed between the undoped semiconductor layer and the growth substrate 101. In addition, the above-described undoped semiconductor layer is not necessarily formed, but may not be formed.

Referring to FIG. 8, a channel layer 140 and a current blocking layer 145 are formed on the light emitting structure layer 135 in correspondence with a unit chip region.

The channel layer 140 and the current blocking layer 145 may be formed on the second conductivity type semiconductor layer 130 using a mask pattern. The channel layer 140 and the current blocking layer 145 may be formed using various deposition methods.

The channel layer 140 may be formed of a material having electrical conductivity lower than that of the reflective layer 160 or the bonding layer 170 or a material forming a Schottky contact with the second conductive semiconductor layer 130 . For example, the channel layer 140, ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, ZnO, SiO _2, SiO _x, SiO _x N _y, Si ₃ N _4, Al ₂ O _3, TiO _x , TiO ₂ , Ti, Al, or Cr.

9 and 10, an ohmic contact layer 150 is formed on the second conductive semiconductor layer 130 and the channel layer 140. A reflective layer 160 (not shown) is formed on the ohmic contact layer 150, ) Can be formed.

The ohmic contact layer 150 and the reflective layer 160 may be formed by any one of E-beam deposition, sputtering, and PECVD (Plasma Enhanced Chemical Vapor Deposition), for example. .

The ohmic contact layer 150 and the reflective layer 160 may be formed in various areas and various kinds of light emitting devices may be formed depending on the area of the ohmic contact layer 150 and / Can be produced.

Referring to FIG. 11, a supporting substrate 180 is formed on the reflective layer 160 and the channel layer 140 via a bonding layer 170.

The bonding layer 170 is in contact with the reflective layer 160, the end of the ohmic contact layer 150 and the protective layer 140 to form the reflective layer 160, the ohmic contact layer 150, 140 can be strengthened.

The support substrate 180 is attached on the bonding layer 170. Although the supporting substrate 180 is bonded to the supporting substrate 180 through the bonding layer 170 in the embodiment, the supporting substrate 180 may be formed by a plating method or a vapor deposition method.

Referring to FIG. 12, the growth substrate 101 is removed from the light emitting structure layer 135. In Fig. 12, the light emitting device shown in Fig. 11 is shown in an inverted manner. Here, the growth substrate 101 may be removed by a laser lift off method or a chemical lift off method.

Referring to FIG. 13, isolation is performed on the light emitting structure layer 135 according to a unit chip region to separate the light emitting structure layers 135 into a plurality of light emitting structure layers 135.

For example, the isolation etching can be performed by a dry etching method such as ICP (Inductively Coupled Plasma).

14, a passivation layer 180 is formed on the channel layer 140 and the light emitting structure layer 135, and the passivation layer 180 is formed to expose the upper surface of the first conductive semiconductor layer 110 180 are selectively removed. Thereafter, a roughness pattern 111 for improving light extraction efficiency is formed on the top surface of the first conductivity type semiconductor layer 110. The roughness pattern 111 may be formed by a wet etching process or a dry etching process.

Next, a narrow channel is formed between the mask layer M and the upper surface of the first conductive type semiconductor layer 110 to form the electrode 115 on the first conductive type semiconductor layer 110 . The mask layer exposed through the passages is etched to provide an area for forming the first contact portions 112 of the electrode 115. [ The electrode 115 may be formed by injecting a material through the passage to form the first contact portion 112, the second contact portion 113, and the third contact portion 114 integrally. Here, the electrode 115 may be formed by a method such as sputtering or electron beam evaporation.

Then, a plurality of light emitting devices can be manufactured by separating the structure into unit chip regions through a chip separation process.

The chip separating process includes, for example, a braking process in which a physical force is applied and separated using a blade, a laser scribing process for separating chips by irradiating a laser to the chip boundary, a wet etching or a dry etching Etching processes, and the like, but the present invention is not limited thereto.

15 is a cross-sectional view of a light emitting device package including a light emitting device according to an embodiment.

15, a light emitting device package 1000 includes a package body 30, a first electrode 31 and a second electrode 32 provided on the package body 30, And a molding member 40 surrounding the light emitting device 100. The light emitting device 100 includes a first electrode 31 and a second electrode 32. The light emitting device 100 is electrically connected to the first electrode 31 and the second electrode 32,

The package body 30 may include a silicon material, a synthetic resin material, or a metal material. The package body 30 may have a cavity having a sloped side surface.

The first electrode 31 and the second electrode 32 are electrically isolated from each other and provide power to the light emitting device 100. [ The first electrode 31 and the second electrode 32 may reflect light generated from the light emitting device 100 to increase the efficiency of light, It may also serve as a discharge.

The light emitting device 100 may be mounted on the package body 30 or on the first electrode 31 or the second electrode 32.

The light emitting device 100 may be electrically connected to the first electrode 31 and the second electrode 32 by wire, flip chip or die bonding. In the present embodiment, the light emitting device 100 is electrically connected to the first electrode 31 through the wire 50 and electrically connected to the second electrode 32 in direct contact therewith.

The molding member 40 may surround the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 40 may include a phosphor to change the wavelength of light emitted from the light emitting device 100.

A light guide plate, a prism sheet, a diffusion sheet, a fluorescent sheet, and the like, which are optical members, may be disposed on a path of light emitted from the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a backlight unit or function as a lighting unit. For example, the lighting system may include a backlight unit, a lighting unit, a pointing device, a lamp, and a streetlight.

16 is a view illustrating a backlight unit including the light emitting device or the light emitting device package according to the embodiment. However, the backlight unit 1100 in Fig. 16 is an example of the illumination system, and the invention is not limited thereto.

16, the backlight unit 1100 includes a bottom frame 1140, a light guide member 1120 disposed in the bottom frame 1140, at least one side surface of the light guide member 1120, And a light emitting module 1110 disposed in the light emitting module 1110. [ A reflective sheet 1130 may be disposed under the light guide member 1120.

The bottom frame 1140 may be formed in a box shape having an open upper surface to accommodate the light guide member 1120, the light emitting module 1110, and the reflection sheet 1130, Or a resin material, but the present invention is not limited thereto.

The light emitting module 1110 may include a substrate 700 and a plurality of light emitting device packages 600 mounted on the substrate 700. The plurality of light emitting device packages 600 may provide light to the light guide member 1120. In this embodiment, the light emitting device package 600 is mounted on the substrate 700, but the light emitting device 100 according to the embodiment may be installed directly.

As shown, the light emitting module 1110 may be disposed on at least one of the inner surfaces of the bottom frame 1140, thereby providing light toward at least one side of the light guide member 1120 can do.

The light emitting module 1110 may be disposed under the bottom frame 1140 and may provide light toward the bottom of the light guide member 1120 according to the design of the backlight unit 1100 The present invention is not limited thereto.

The light guide member 1120 may be disposed in the bottom frame 1140. The light guide member 1120 may guide the light provided from the light emitting module 1110 to a display panel (not shown) by converting the light into a surface light source.

The light guide member 1120 may be a light guide panel (LGP). The light guide plate may be formed of one of acrylic resin type such as PMMA (polymethyl methacrylate), polyethylene terephthlate (PET), polycarbonate (PC), COC and PEN (polyethylene naphthalate) resin.

An optical sheet 1150 may be disposed above the light guide member 1120.

The optical sheet 1150 may include at least one of a diffusion sheet, a light condensing sheet, a brightness increasing sheet, and a fluorescent sheet. For example, the optical sheet 1150 may be formed by laminating the diffusion sheet, the light condensing sheet, the brightness increasing sheet, and the fluorescent sheet. In this case, the diffusion sheet 1150 diffuses the light emitted from the light emitting module 1110 evenly, and the diffused light can be condensed by the condensing sheet into a display panel (not shown). At this time, the light emitted from the light condensing sheet is randomly polarized light, and the brightness increasing sheet can increase the degree of polarization of the light emitted from the light condensing sheet. The light condensing sheet may be a horizontal or / and a vertical prism sheet. In addition, the brightness enhancement sheet may be a dual brightness enhancement film. Further, the fluorescent sheet may be a translucent plate or film containing a phosphor.

The reflective sheet 1130 may be disposed under the light guide member 1120. The reflective sheet 1130 can reflect light emitted through the lower surface of the light guide member 1120 toward the light exit surface of the light guide member 1120.

The reflective sheet 1130 may be formed of a resin material having a high reflectance, that is, PET, PC, or PVC resin, but is not limited thereto.

17 is a view illustrating a lighting unit including a light emitting device or a light emitting device package according to the embodiment. However, the illumination unit 1200 of Fig. 17 is an example of the illumination system, and is not limited thereto.

17, the illumination unit 1200 includes a case body 1210, a light emitting module 1230 installed in the case body 1210, and a power supply unit And may include receiving connection terminals 1220.

The case body 1210 is preferably formed of a material having a good heat dissipation property, and may be formed of, for example, a metal material or a resin material.

The light emitting module 1230 may include a substrate 700 and at least one light emitting device package 600 mounted on the substrate 700. In the present embodiment, the light emitting device package 600 is installed on the substrate 700, but the light emitting device 100 according to the present embodiment may be installed directly.

The substrate 700 may be a circuit pattern printed on an insulator. For example, the PCB 700 may be a printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB . ≪ / RTI >

In addition, the substrate 700 may be formed of a material that efficiently reflects light, or may be formed of a color such that the surface is efficiently reflected to light, for example, white or silver.

The at least one light emitting device package 600 may be mounted on the substrate 700. The light emitting device package 600 may include at least one light emitting diode (LED). The light emitting diode may include a colored light emitting diode that emits red, green, blue, or white colored light, and a UV light emitting diode that emits ultraviolet (UV) light.

The light emitting module 1230 may be arranged to have various combinations of light emitting diodes to obtain color and brightness. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be arranged in combination to secure a high color rendering index (CRI). Further, a fluorescent sheet may be further disposed on the path of light emitted from the light emitting module 1230, and the fluorescent sheet may change the wavelength of light emitted from the light emitting module 1230. For example, when the light emitted from the light emitting module 1230 has a blue wavelength band, the fluorescent sheet may include a yellow phosphor. Light emitted from the light emitting module 1230 passes through the fluorescent sheet, .

The connection terminal 1220 may be electrically connected to the light emitting module 1230 to supply power. As shown in FIG. 17, the connection terminal 1220 is connected to the external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1220 may be formed in a pin shape and inserted into an external power source, or may be connected to an external power source through a wire.

In the above-described illumination system, at least one of a light guide member, a diffusion sheet, a light condensing sheet, a brightness increasing sheet, and a fluorescent sheet is disposed on the path of light emitted from the light emitting module to obtain a desired optical effect.

As described above, the illumination system can have excellent light efficiency and reliability by including the light emitting device or the light emitting device package with reduced operating voltage and improved light efficiency.

While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined by equivalents to the appended claims, as well as the appended claims.

Claims (9)

A support substrate;
A second conductive semiconductor layer on the supporting substrate;
An active layer on the second conductive type semiconductor layer;
A first conductive semiconductor layer on the active layer; And
And an electrode disposed on the first conductivity type semiconductor layer,
The electrode
A first contact portion disposed in the first conductive type semiconductor layer, a second contact portion contacting the upper surface of the first conductive type semiconductor layer, and a third contact portion connecting the first contact portion and the second contact portion, ,
Wherein a width of the first contact portion is larger than a width of the third contact portion. The method according to claim 1,
And the first contact portion, the second contact portion, and the third contact portion are integrally formed. The plasma display apparatus according to claim 1,
Wherein a width of the first contact portion is larger than a width of the second contact portion. The electrode according to claim 2,
Wherein a width of the third contact portion is smaller than a width of the first contact portion and the second contact portion. 5. The electrode according to claim 4,
And at least a part of the first conductivity type semiconductor layer is disposed between the first contact portion and the second contact portion. The electrode according to claim 2,
And a roughness pattern is formed on an upper surface of the second contact portion. The plasma display apparatus according to claim 1,
Wherein the first conductive type semiconductor layer which is in contact with a lower surface of the first contact portion or a lower surface of the second contact portion is a nitrogen facing surface (N-face). The method according to claim 1,
Wherein the first contact portion and the second contact portion are vertically overlapped with each other. A light emitting device package comprising the light emitting element according to any one of claims 1 to 8.

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