KR20110139699A - 리소그래피 장치 및 기판 핸들링 배열체 - Google Patents

리소그래피 장치 및 기판 핸들링 배열체 Download PDF

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Publication number
KR20110139699A
KR20110139699A KR1020117022202A KR20117022202A KR20110139699A KR 20110139699 A KR20110139699 A KR 20110139699A KR 1020117022202 A KR1020117022202 A KR 1020117022202A KR 20117022202 A KR20117022202 A KR 20117022202A KR 20110139699 A KR20110139699 A KR 20110139699A
Authority
KR
South Korea
Prior art keywords
lithographic apparatus
charged particle
arrangement
chamber
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1020117022202A
Other languages
English (en)
Korean (ko)
Inventor
구이도 데 보에르
샌더 발투센
헨드릭 잔 데 종
Original Assignee
마퍼 리쏘그라피 아이피 비.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 마퍼 리쏘그라피 아이피 비.브이. filed Critical 마퍼 리쏘그라피 아이피 비.브이.
Publication of KR20110139699A publication Critical patent/KR20110139699A/ko
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/16—Vessels; Containers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Plasma & Fusion (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020117022202A 2009-02-22 2010-02-22 리소그래피 장치 및 기판 핸들링 배열체 Abandoned KR20110139699A (ko)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US15441509P 2009-02-22 2009-02-22
US15441109P 2009-02-22 2009-02-22
US61/154,411 2009-02-22
US61/154,415 2009-02-22
US28940709P 2009-12-23 2009-12-23
US61/289,407 2009-12-23
US30633310P 2010-02-19 2010-02-19
US61/306,333 2010-02-19

Publications (1)

Publication Number Publication Date
KR20110139699A true KR20110139699A (ko) 2011-12-29

Family

ID=42035939

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117022202A Abandoned KR20110139699A (ko) 2009-02-22 2010-02-22 리소그래피 장치 및 기판 핸들링 배열체

Country Status (6)

Country Link
US (1) US20110049393A1 (enExample)
EP (1) EP2399271B1 (enExample)
JP (1) JP5539406B2 (enExample)
KR (1) KR20110139699A (enExample)
CN (1) CN102414776A (enExample)
WO (1) WO2010094804A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5315100B2 (ja) * 2009-03-18 2013-10-16 株式会社ニューフレアテクノロジー 描画装置
EP2681624B1 (en) * 2010-12-14 2016-07-20 Mapper Lithography IP B.V. Lithography system and method of processing substrates in such a lithography system
CN106933063B (zh) * 2012-03-20 2019-01-18 迈普尔平版印刷Ip有限公司 电子射束光刻系统
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
CN104520968B (zh) 2012-05-14 2017-07-07 迈普尔平版印刷Ip有限公司 带电粒子光刻系统和射束产生器
NL2010624C2 (en) 2013-04-08 2014-10-09 Mapper Lithography Ip Bv Cabinet for electronic equipment.
KR20160044005A (ko) * 2013-08-16 2016-04-22 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치, 프로그램가능한 패터닝 디바이스 및 리소그래피 방법
KR20210099516A (ko) 2020-02-03 2021-08-12 아이엠에스 나노패브릭케이션 게엠베하 멀티―빔 라이터의 블러 변화 보정
JP7422349B2 (ja) * 2020-03-26 2024-01-26 国立研究開発法人物質・材料研究機構 走査型電子顕微鏡用電子銃チャンバー、これを含む電子銃及び走査電子顕微鏡
KR20210132599A (ko) 2020-04-24 2021-11-04 아이엠에스 나노패브릭케이션 게엠베하 대전 입자 소스
EP4095882A1 (en) * 2021-05-25 2022-11-30 IMS Nanofabrication GmbH Pattern data processing for programmable direct-write apparatus
US12154756B2 (en) 2021-08-12 2024-11-26 Ims Nanofabrication Gmbh Beam pattern device having beam absorber structure

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3157308A (en) 1961-09-05 1964-11-17 Clark Mfg Co J L Canister type container and method of making the same
US3159408A (en) 1961-10-05 1964-12-01 Grace W R & Co Chuck
US3365091A (en) * 1964-10-30 1968-01-23 Welding Research Inc Vacuum chamber
US4524308A (en) 1984-06-01 1985-06-18 Sony Corporation Circuits for accomplishing electron beam convergence in color cathode ray tubes
JPH04352410A (ja) * 1991-05-30 1992-12-07 Canon Inc 半導体製造装置
AU6449994A (en) 1993-04-30 1994-11-21 Board Of Regents, The University Of Texas System Megavoltage scanning imager and method for its use
JPH0936198A (ja) * 1995-07-19 1997-02-07 Hitachi Ltd 真空処理装置およびそれを用いた半導体製造ライン
EP0766405A1 (en) 1995-09-29 1997-04-02 STMicroelectronics S.r.l. Successive approximation register without redundancy
JPH09209150A (ja) * 1996-02-06 1997-08-12 Tokyo Electron Ltd 真空チャンバ及びその製造方法
JPH1054369A (ja) * 1996-05-21 1998-02-24 Ebara Corp 真空ポンプの制御装置
US6235634B1 (en) * 1997-10-08 2001-05-22 Applied Komatsu Technology, Inc. Modular substrate processing system
JP3463855B2 (ja) * 1997-12-18 2003-11-05 富士重工業株式会社 無段変速機の変速制御装置
AU3888400A (en) * 1999-03-19 2000-10-09 Electron Vision Corporation Cluster tool for wafer processing having an electron beam exposure module
JP3019260B1 (ja) * 1999-03-26 2000-03-13 株式会社日立製作所 電子ビ―ム描画装置
WO2002045153A1 (fr) * 2000-12-01 2002-06-06 Ebara Corporation Procede et appareil d'inspection utilisant un faisceau d'electrons, et procede de production de dispositif utilisant celui-ci
JP2007147648A (ja) * 2000-12-01 2007-06-14 Ebara Corp 欠陥検査方法及び基板検査装置
KR101060557B1 (ko) 2002-10-25 2011-08-31 마퍼 리쏘그라피 아이피 비.브이. 리소그라피 시스템
KR101077098B1 (ko) 2002-10-30 2011-10-26 마퍼 리쏘그라피 아이피 비.브이. 전자 빔 노출 시스템
KR101068607B1 (ko) 2003-03-10 2011-09-30 마퍼 리쏘그라피 아이피 비.브이. 복수 개의 빔렛 발생 장치
JP4949843B2 (ja) 2003-05-28 2012-06-13 マッパー・リソグラフィー・アイピー・ビー．ブイ． 荷電粒子ビームレット露光システム
JP2005016255A (ja) * 2003-06-27 2005-01-20 Sumitomo Heavy Ind Ltd 扉ロック装置、及び扉システム
JP2005032505A (ja) * 2003-07-10 2005-02-03 Nikon Corp 磁気シールド構造及び露光装置
WO2005010618A2 (en) 2003-07-30 2005-02-03 Mapper Lithography Ip B.V. Modulator circuitry
US7819079B2 (en) * 2004-12-22 2010-10-26 Applied Materials, Inc. Cartesian cluster tool configuration for lithography type processes
US7709815B2 (en) 2005-09-16 2010-05-04 Mapper Lithography Ip B.V. Lithography system and projection method
CN102986016B (zh) * 2005-09-18 2015-11-25 弗雷德里克·A·弗里奇 用于在洁净空间中垂直定位基片处理设备的方法和装置
JP6352529B2 (ja) 2015-04-03 2018-07-04 株式会社日立ハイテクノロジーズ 光量検出装置、それを用いた免疫分析装置および荷電粒子線装置

Also Published As

Publication number Publication date
EP2399271B1 (en) 2013-01-16
JP5539406B2 (ja) 2014-07-02
US20110049393A1 (en) 2011-03-03
CN102414776A (zh) 2012-04-11
WO2010094804A1 (en) 2010-08-26
EP2399271A1 (en) 2011-12-28
JP2012518902A (ja) 2012-08-16

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Patent event date: 20110922

Patent event code: PA01051R01D

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Patent event code: PA02012R01D

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E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

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Patent event date: 20150623

PC1904 Unpaid initial registration fee