KR20110131117A - 알루민산염 형광체, 그 제조 방법 및 발광 소자 - Google Patents
알루민산염 형광체, 그 제조 방법 및 발광 소자 Download PDFInfo
- Publication number
- KR20110131117A KR20110131117A KR1020110049422A KR20110049422A KR20110131117A KR 20110131117 A KR20110131117 A KR 20110131117A KR 1020110049422 A KR1020110049422 A KR 1020110049422A KR 20110049422 A KR20110049422 A KR 20110049422A KR 20110131117 A KR20110131117 A KR 20110131117A
- Authority
- KR
- South Korea
- Prior art keywords
- aluminate
- aluminate phosphor
- particles
- primary
- phosphor
- Prior art date
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- 150000004645 aluminates Chemical class 0.000 title claims abstract description 118
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 110
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000002245 particle Substances 0.000 claims abstract description 103
- 239000011164 primary particle Substances 0.000 claims abstract description 25
- 239000005084 Strontium aluminate Substances 0.000 claims abstract description 20
- FNWBQFMGIFLWII-UHFFFAOYSA-N strontium aluminate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Sr+2].[Sr+2] FNWBQFMGIFLWII-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims description 53
- 239000000843 powder Substances 0.000 claims description 28
- 230000003213 activating effect Effects 0.000 claims description 23
- 239000000126 substance Substances 0.000 claims description 19
- 229910003668 SrAl Inorganic materials 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- 239000011268 mixed slurry Substances 0.000 claims description 18
- 238000001694 spray drying Methods 0.000 claims description 18
- 229910052712 strontium Inorganic materials 0.000 claims description 16
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 15
- 238000002156 mixing Methods 0.000 claims description 14
- 239000002994 raw material Substances 0.000 claims description 13
- 239000002612 dispersion medium Substances 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 10
- 239000002002 slurry Substances 0.000 claims description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- 229910052693 Europium Inorganic materials 0.000 claims description 4
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 3
- 229910052691 Erbium Inorganic materials 0.000 claims description 3
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 3
- 229910052689 Holmium Inorganic materials 0.000 claims description 3
- 229910052765 Lutetium Inorganic materials 0.000 claims description 3
- 229910052772 Samarium Inorganic materials 0.000 claims description 3
- 229910052771 Terbium Inorganic materials 0.000 claims description 3
- 229910052775 Thulium Inorganic materials 0.000 claims description 3
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 3
- 229910052727 yttrium Inorganic materials 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- 229910019142 PO4 Inorganic materials 0.000 claims 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims 1
- 239000010452 phosphate Substances 0.000 claims 1
- 230000007420 reactivation Effects 0.000 claims 1
- 238000010304 firing Methods 0.000 description 34
- 230000000052 comparative effect Effects 0.000 description 16
- 230000008569 process Effects 0.000 description 13
- 239000007788 liquid Substances 0.000 description 12
- 238000001878 scanning electron micrograph Methods 0.000 description 12
- 239000007787 solid Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 230000005284 excitation Effects 0.000 description 11
- 238000002441 X-ray diffraction Methods 0.000 description 10
- 239000012298 atmosphere Substances 0.000 description 10
- 238000004020 luminiscence type Methods 0.000 description 8
- 238000001035 drying Methods 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 239000002270 dispersing agent Substances 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 238000000227 grinding Methods 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 150000004703 alkoxides Chemical class 0.000 description 3
- HIGRAKVNKLCVCA-UHFFFAOYSA-N alumine Chemical compound C1=CC=[Al]C=C1 HIGRAKVNKLCVCA-UHFFFAOYSA-N 0.000 description 3
- 238000000149 argon plasma sintering Methods 0.000 description 3
- 239000011324 bead Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- -1 for example Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 229910000018 strontium carbonate Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000012190 activator Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000004581 coalescence Methods 0.000 description 2
- 229910001940 europium oxide Inorganic materials 0.000 description 2
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 238000006862 quantum yield reaction Methods 0.000 description 2
- DHEQXMRUPNDRPG-UHFFFAOYSA-N strontium nitrate Chemical compound [Sr+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O DHEQXMRUPNDRPG-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- PXAOSGRNSNAHEO-UHFFFAOYSA-N [P].[Sr] Chemical compound [P].[Sr] PXAOSGRNSNAHEO-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- GDQXQVWVCVMMIE-UHFFFAOYSA-N dinitrooxyalumanyl nitrate hexahydrate Chemical compound O.O.O.O.O.O.[Al+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O GDQXQVWVCVMMIE-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 238000002189 fluorescence spectrum Methods 0.000 description 1
- 150000004673 fluoride salts Chemical class 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010981 turquoise Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000001238 wet grinding Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2010-123594 | 2010-05-28 | ||
JP2010123594A JP2011246662A (ja) | 2010-05-28 | 2010-05-28 | アルミン酸塩蛍光体、その製造方法及び発光素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20110131117A true KR20110131117A (ko) | 2011-12-06 |
Family
ID=45007349
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020110049422A KR20110131117A (ko) | 2010-05-28 | 2011-05-25 | 알루민산염 형광체, 그 제조 방법 및 발광 소자 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2011246662A (zh) |
KR (1) | KR20110131117A (zh) |
CN (1) | CN102260499A (zh) |
TW (1) | TW201204812A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013163811A (ja) * | 2012-02-10 | 2013-08-22 | Rolex Sa | 減衰時間の長い新規燐光体 |
JP2014145040A (ja) * | 2013-01-29 | 2014-08-14 | Sakai Chem Ind Co Ltd | 応力発光材料用組成物の製造方法、その製造方法によって得られる応力発光材料用組成物、及びその組成物から製造した応力発光材料 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6025138B2 (ja) * | 2012-02-14 | 2016-11-16 | スタンレー電気株式会社 | 発光装置及びその製造方法 |
CN104204134B (zh) * | 2012-03-16 | 2016-03-02 | 株式会社东芝 | 荧光体、荧光体的制造方法及发光装置 |
CN102965109A (zh) * | 2012-10-31 | 2013-03-13 | 彩虹集团公司 | 一种合成led荧光粉材料的新工艺 |
JP2014198758A (ja) * | 2013-03-29 | 2014-10-23 | 堺化学工業株式会社 | 応力発光材料とその応用、及び応力発光材料の製造方法 |
AU2014245218B2 (en) * | 2013-03-29 | 2017-04-06 | National Institute Of Advanced Industrial Science And Technology | Mechanoluminescent material and use applications thereof, raw material composition for mechanoluminescent material, and method for producing mechanoluminescent material |
JP6135249B2 (ja) * | 2013-03-29 | 2017-05-31 | 堺化学工業株式会社 | 応力発光材料用原料組成物、応力発光材料、及びその応用 |
JP6645429B2 (ja) | 2014-08-07 | 2020-02-14 | 三菱ケミカル株式会社 | 蛍光体、発光装置、画像表示装置及び照明装置 |
CN105670615B (zh) * | 2016-03-08 | 2017-09-01 | 浙江大学 | 一种二价铕离子掺杂的铝酸锶笼形微球发光材料及其制备方法 |
JP7342484B2 (ja) * | 2018-07-27 | 2023-09-12 | 堺化学工業株式会社 | 蓄光材料の製造方法及び蓄光材料 |
JP6685635B1 (ja) * | 2020-01-31 | 2020-04-22 | 株式会社ティ—オーカンパニー | 蓄光材の製造方法 |
CN116157734A (zh) * | 2020-07-16 | 2023-05-23 | 住友化学株式会社 | 荧光体 |
JP2022120801A (ja) * | 2021-02-05 | 2022-08-18 | 住友化学株式会社 | 蛍光体の製造方法及び蛍光体 |
JP2022120802A (ja) * | 2021-02-05 | 2022-08-18 | 住友化学株式会社 | 蛍光体及び蛍光体の製造方法 |
CN117940532A (zh) * | 2021-09-08 | 2024-04-26 | 电化株式会社 | 荧光体粉末、及发光装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH069956A (ja) * | 1991-12-27 | 1994-01-18 | Fuji Photo Film Co Ltd | 球形焼結蛍光体およびその製造法 |
JP3268431B2 (ja) * | 1997-03-26 | 2002-03-25 | 株式会社東京化学研究所 | 残光特性を有するアルミン酸塩系蛍光体の製造方法 |
FR2855169B1 (fr) * | 2003-05-23 | 2006-06-16 | Rhodia Elect & Catalysis | Composes precurseurs d'aluminates d'alcalino-terreux ou de terre rare, leur procede de preparation et leur utilisation comme precurseur de luminophore notamment |
JP5315501B2 (ja) * | 2007-07-10 | 2013-10-16 | 中部キレスト株式会社 | 蛍光発光粉体の製造方法および蛍光発光粉体 |
KR101514443B1 (ko) * | 2008-03-26 | 2015-04-22 | 우베 고산 가부시키가이샤 | 투명 형광체 및 그 제조방법 |
CN102395648A (zh) * | 2009-04-13 | 2012-03-28 | 日本化学工业株式会社 | 红色荧光体、其制造方法以及发光元件 |
-
2010
- 2010-05-28 JP JP2010123594A patent/JP2011246662A/ja active Pending
-
2011
- 2011-04-27 TW TW100114597A patent/TW201204812A/zh unknown
- 2011-05-25 KR KR1020110049422A patent/KR20110131117A/ko not_active Application Discontinuation
- 2011-05-27 CN CN2011101473121A patent/CN102260499A/zh active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013163811A (ja) * | 2012-02-10 | 2013-08-22 | Rolex Sa | 減衰時間の長い新規燐光体 |
JP2014145040A (ja) * | 2013-01-29 | 2014-08-14 | Sakai Chem Ind Co Ltd | 応力発光材料用組成物の製造方法、その製造方法によって得られる応力発光材料用組成物、及びその組成物から製造した応力発光材料 |
Also Published As
Publication number | Publication date |
---|---|
TW201204812A (en) | 2012-02-01 |
JP2011246662A (ja) | 2011-12-08 |
CN102260499A (zh) | 2011-11-30 |
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