KR20110107402A - 개선된 결정 배향성을 갖는 광기전력 소자 - Google Patents

개선된 결정 배향성을 갖는 광기전력 소자 Download PDF

Info

Publication number
KR20110107402A
KR20110107402A KR1020117019848A KR20117019848A KR20110107402A KR 20110107402 A KR20110107402 A KR 20110107402A KR 1020117019848 A KR1020117019848 A KR 1020117019848A KR 20117019848 A KR20117019848 A KR 20117019848A KR 20110107402 A KR20110107402 A KR 20110107402A
Authority
KR
South Korea
Prior art keywords
transparent conductive
conductive oxide
layer
annealing
adjacent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020117019848A
Other languages
English (en)
Korean (ko)
Inventor
유 양
보일 파쉬마코프
지보 자오
Original Assignee
퍼스트 솔라, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 퍼스트 솔라, 인코포레이티드 filed Critical 퍼스트 솔라, 인코포레이티드
Publication of KR20110107402A publication Critical patent/KR20110107402A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
KR1020117019848A 2009-01-29 2010-01-14 개선된 결정 배향성을 갖는 광기전력 소자 Withdrawn KR20110107402A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14827609P 2009-01-29 2009-01-29
US61/148,276 2009-01-29

Publications (1)

Publication Number Publication Date
KR20110107402A true KR20110107402A (ko) 2011-09-30

Family

ID=42353175

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117019848A Withdrawn KR20110107402A (ko) 2009-01-29 2010-01-14 개선된 결정 배향성을 갖는 광기전력 소자

Country Status (8)

Country Link
US (1) US20100186815A1 (https=)
EP (1) EP2392025B1 (https=)
JP (1) JP2012516573A (https=)
KR (1) KR20110107402A (https=)
CN (1) CN102365707B (https=)
AU (1) AU2010208530A1 (https=)
TW (1) TW201034207A (https=)
WO (1) WO2010088059A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101396102B1 (ko) 2009-12-04 2014-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011126709A2 (en) * 2010-03-30 2011-10-13 First Solar, Inc. Doped buffer layer
US20120060923A1 (en) * 2010-03-31 2012-03-15 Zhibo Zhao Photovoltaic device barrier layer
WO2012021593A1 (en) 2010-08-13 2012-02-16 First Solar, Inc. Photovoltaic device with oxide layer
WO2012024557A2 (en) * 2010-08-20 2012-02-23 First Solar, Inc. Photovoltaic device front contact
WO2012040013A2 (en) * 2010-09-22 2012-03-29 First Solar, Inc. Photovoltaic device containing an n-type dopant source
US8354586B2 (en) 2010-10-01 2013-01-15 Guardian Industries Corp. Transparent conductor film stack with cadmium stannate, corresponding photovoltaic device, and method of making same
TWI477643B (zh) * 2011-09-20 2015-03-21 氣體產品及化學品股份公司 用於光伏打鈍化的含氧前驅物
US9034686B2 (en) * 2012-06-29 2015-05-19 First Solar, Inc. Manufacturing methods for semiconductor devices
US20140053895A1 (en) * 2012-08-24 2014-02-27 Rosestreet Labs, Llc Intentionally-doped cadmium oxide layer for solar cells
US9698285B2 (en) 2013-02-01 2017-07-04 First Solar, Inc. Photovoltaic device including a P-N junction and method of manufacturing
US11876140B2 (en) * 2013-05-02 2024-01-16 First Solar, Inc. Photovoltaic devices and method of making
CN104183663B (zh) 2013-05-21 2017-04-12 第一太阳能马来西亚有限公司 光伏器件及其制备方法
US10062800B2 (en) 2013-06-07 2018-08-28 First Solar, Inc. Photovoltaic devices and method of making
US10672925B2 (en) * 2013-06-14 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Thin film solar cell and method of forming same
US10529883B2 (en) 2014-11-03 2020-01-07 First Solar, Inc. Photovoltaic devices and method of manufacturing
US10680123B2 (en) * 2015-03-12 2020-06-09 Vitro Flat Glass Llc Article with transparent conductive oxide coating

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5234391A (en) * 1975-09-12 1977-03-16 Hitachi Ltd Production method of transparent electrode film
JPS63304520A (ja) * 1987-06-04 1988-12-12 Sumitomo Electric Ind Ltd 透明電極の製造方法
JPH03120763A (ja) * 1989-10-04 1991-05-22 Ricoh Co Ltd 光電変換素子
DE4442824C1 (de) * 1994-12-01 1996-01-25 Siemens Ag Solarzelle mit Chalkopyrit-Absorberschicht
US6169246B1 (en) * 1998-09-08 2001-01-02 Midwest Research Institute Photovoltaic devices comprising zinc stannate buffer layer and method for making
US5922142A (en) * 1996-11-07 1999-07-13 Midwest Research Institute Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making
US6137048A (en) * 1996-11-07 2000-10-24 Midwest Research Institute Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby
JPH10247625A (ja) * 1997-03-04 1998-09-14 Matsushita Denchi Kogyo Kk ＣｄＴｅ膜の形成方法とそれを用いた太陽電池
JP3247876B2 (ja) * 1999-03-09 2002-01-21 日本板硝子株式会社 透明導電膜付きガラス基板
JP2000357810A (ja) * 1999-06-16 2000-12-26 Matsushita Battery Industrial Co Ltd テルル化カドミウム膜の製造方法および太陽電池
JP2001118758A (ja) * 1999-10-14 2001-04-27 Sony Corp 半導体素子の製造方法
JP2001223376A (ja) * 2000-02-10 2001-08-17 Midwest Research Inst 多結晶半導体薄膜太陽電池の製造方法およびその方法で製造された太陽電池
JP2001237441A (ja) * 2000-02-24 2001-08-31 Matsushita Battery Industrial Co Ltd 太陽電池の製造方法および太陽電池
US20050009228A1 (en) * 2001-12-13 2005-01-13 Xuanzhi Wu Semiconductor device with higher oxygen (02) concentration within window layers and method for making
US20070111367A1 (en) * 2005-10-19 2007-05-17 Basol Bulent M Method and apparatus for converting precursor layers into photovoltaic absorbers
US8389852B2 (en) * 2006-02-22 2013-03-05 Guardian Industries Corp. Electrode structure for use in electronic device and method of making same
US20090014055A1 (en) * 2006-03-18 2009-01-15 Solyndra, Inc. Photovoltaic Modules Having a Filling Material
CN101652867B (zh) * 2007-04-06 2012-08-08 株式会社半导体能源研究所 光伏器件及其制造方法
US8198529B2 (en) * 2008-05-01 2012-06-12 First Solar, Inc. Transparent conductive materials including cadmium stannate

Also Published As

Publication number Publication date
EP2392025B1 (en) 2013-09-04
CN102365707B (zh) 2015-02-04
CN102365707A (zh) 2012-02-29
EP2392025A1 (en) 2011-12-07
TW201034207A (en) 2010-09-16
WO2010088059A1 (en) 2010-08-05
JP2012516573A (ja) 2012-07-19
EP2392025A4 (en) 2012-07-11
US20100186815A1 (en) 2010-07-29
AU2010208530A1 (en) 2011-08-18

Similar Documents

Publication Publication Date Title
KR20110107402A (ko) 개선된 결정 배향성을 갖는 광기전력 소자
US20170271622A1 (en) High efficiency thin film tandem solar cells and other semiconductor devices
US20100180935A1 (en) Multiple band gapped cadmium telluride photovoltaic devices and process for making the same
US8519435B2 (en) Flexible photovoltaic cells having a polyimide material layer and method of producing same
WO2011081829A1 (en) Photovoltaic window layer
CN103283031B (zh) 包含n型掺杂剂源的光伏装置
US20100206372A1 (en) Photovoltaic Devices Including Heterojunctions
JP2012516573A5 (https=)
US20140034126A1 (en) Thin film solar cell module and method of manufacturing the same
WO2013134762A2 (en) Photovoltaic device and method of manufacture
CN103210498A (zh) 光伏装置
US20110088768A1 (en) Method of annealing cadmium telluride photovoltaic device
CN102386262A (zh) 包括基于镉的光伏打材料的电池
US20130104965A1 (en) Solar cell module and manufacturing method therefor
KR101643132B1 (ko) 탄소 기판을 이용한 태양 전지 제조 방법
KR101210034B1 (ko) 태양전지 및 이의 제조방법
KR20160111622A (ko) 태양 전지
KR20160111623A (ko) 태양 전지
KR20250077034A (ko) 양면수광형 박막태양전지 및 그 제조방법
US9722115B2 (en) Solar cell encapsulating module and method for manufacturing the same
WO2014151514A1 (en) Photovoltaic device with a zinc oxide layer and method of formation
Gordon et al. Toward Efficient Thin-Film Polycrystalline-Silicon Modules using Interdigitated Top Contacts

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20110826

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid