AU2010208530A1 - Photovoltaic device with improved crystal orientation - Google Patents

Photovoltaic device with improved crystal orientation Download PDF

Info

Publication number
AU2010208530A1
AU2010208530A1 AU2010208530A AU2010208530A AU2010208530A1 AU 2010208530 A1 AU2010208530 A1 AU 2010208530A1 AU 2010208530 A AU2010208530 A AU 2010208530A AU 2010208530 A AU2010208530 A AU 2010208530A AU 2010208530 A1 AU2010208530 A1 AU 2010208530A1
Authority
AU
Australia
Prior art keywords
transparent conductive
conductive oxide
layer
depositing
annealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2010208530A
Other languages
English (en)
Inventor
Boil Pashmakov
Yu Yang
Zhibo Zhao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
First Solar Inc
Original Assignee
First Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by First Solar Inc filed Critical First Solar Inc
Publication of AU2010208530A1 publication Critical patent/AU2010208530A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
AU2010208530A 2009-01-29 2010-01-14 Photovoltaic device with improved crystal orientation Abandoned AU2010208530A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14827609P 2009-01-29 2009-01-29
US61/148,276 2009-01-29
PCT/US2010/021052 WO2010088059A1 (en) 2009-01-29 2010-01-14 Photovoltaic device with improved crystal orientation

Publications (1)

Publication Number Publication Date
AU2010208530A1 true AU2010208530A1 (en) 2011-08-18

Family

ID=42353175

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2010208530A Abandoned AU2010208530A1 (en) 2009-01-29 2010-01-14 Photovoltaic device with improved crystal orientation

Country Status (8)

Country Link
US (1) US20100186815A1 (https=)
EP (1) EP2392025B1 (https=)
JP (1) JP2012516573A (https=)
KR (1) KR20110107402A (https=)
CN (1) CN102365707B (https=)
AU (1) AU2010208530A1 (https=)
TW (1) TW201034207A (https=)
WO (1) WO2010088059A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101396102B1 (ko) 2009-12-04 2014-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011126709A2 (en) * 2010-03-30 2011-10-13 First Solar, Inc. Doped buffer layer
US20120060923A1 (en) * 2010-03-31 2012-03-15 Zhibo Zhao Photovoltaic device barrier layer
WO2012021593A1 (en) 2010-08-13 2012-02-16 First Solar, Inc. Photovoltaic device with oxide layer
WO2012024557A2 (en) * 2010-08-20 2012-02-23 First Solar, Inc. Photovoltaic device front contact
WO2012040013A2 (en) * 2010-09-22 2012-03-29 First Solar, Inc. Photovoltaic device containing an n-type dopant source
US8354586B2 (en) 2010-10-01 2013-01-15 Guardian Industries Corp. Transparent conductor film stack with cadmium stannate, corresponding photovoltaic device, and method of making same
TWI477643B (zh) * 2011-09-20 2015-03-21 氣體產品及化學品股份公司 用於光伏打鈍化的含氧前驅物
US9034686B2 (en) * 2012-06-29 2015-05-19 First Solar, Inc. Manufacturing methods for semiconductor devices
US20140053895A1 (en) * 2012-08-24 2014-02-27 Rosestreet Labs, Llc Intentionally-doped cadmium oxide layer for solar cells
US9698285B2 (en) 2013-02-01 2017-07-04 First Solar, Inc. Photovoltaic device including a P-N junction and method of manufacturing
US11876140B2 (en) * 2013-05-02 2024-01-16 First Solar, Inc. Photovoltaic devices and method of making
CN104183663B (zh) 2013-05-21 2017-04-12 第一太阳能马来西亚有限公司 光伏器件及其制备方法
US10062800B2 (en) 2013-06-07 2018-08-28 First Solar, Inc. Photovoltaic devices and method of making
US10672925B2 (en) * 2013-06-14 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Thin film solar cell and method of forming same
US10529883B2 (en) 2014-11-03 2020-01-07 First Solar, Inc. Photovoltaic devices and method of manufacturing
US10680123B2 (en) * 2015-03-12 2020-06-09 Vitro Flat Glass Llc Article with transparent conductive oxide coating

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5234391A (en) * 1975-09-12 1977-03-16 Hitachi Ltd Production method of transparent electrode film
JPS63304520A (ja) * 1987-06-04 1988-12-12 Sumitomo Electric Ind Ltd 透明電極の製造方法
JPH03120763A (ja) * 1989-10-04 1991-05-22 Ricoh Co Ltd 光電変換素子
DE4442824C1 (de) * 1994-12-01 1996-01-25 Siemens Ag Solarzelle mit Chalkopyrit-Absorberschicht
US6169246B1 (en) * 1998-09-08 2001-01-02 Midwest Research Institute Photovoltaic devices comprising zinc stannate buffer layer and method for making
US5922142A (en) * 1996-11-07 1999-07-13 Midwest Research Institute Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making
US6137048A (en) * 1996-11-07 2000-10-24 Midwest Research Institute Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby
JPH10247625A (ja) * 1997-03-04 1998-09-14 Matsushita Denchi Kogyo Kk ＣｄＴｅ膜の形成方法とそれを用いた太陽電池
JP3247876B2 (ja) * 1999-03-09 2002-01-21 日本板硝子株式会社 透明導電膜付きガラス基板
JP2000357810A (ja) * 1999-06-16 2000-12-26 Matsushita Battery Industrial Co Ltd テルル化カドミウム膜の製造方法および太陽電池
JP2001118758A (ja) * 1999-10-14 2001-04-27 Sony Corp 半導体素子の製造方法
JP2001223376A (ja) * 2000-02-10 2001-08-17 Midwest Research Inst 多結晶半導体薄膜太陽電池の製造方法およびその方法で製造された太陽電池
JP2001237441A (ja) * 2000-02-24 2001-08-31 Matsushita Battery Industrial Co Ltd 太陽電池の製造方法および太陽電池
US20050009228A1 (en) * 2001-12-13 2005-01-13 Xuanzhi Wu Semiconductor device with higher oxygen (02) concentration within window layers and method for making
US20070111367A1 (en) * 2005-10-19 2007-05-17 Basol Bulent M Method and apparatus for converting precursor layers into photovoltaic absorbers
US8389852B2 (en) * 2006-02-22 2013-03-05 Guardian Industries Corp. Electrode structure for use in electronic device and method of making same
US20090014055A1 (en) * 2006-03-18 2009-01-15 Solyndra, Inc. Photovoltaic Modules Having a Filling Material
CN101652867B (zh) * 2007-04-06 2012-08-08 株式会社半导体能源研究所 光伏器件及其制造方法
US8198529B2 (en) * 2008-05-01 2012-06-12 First Solar, Inc. Transparent conductive materials including cadmium stannate

Also Published As

Publication number Publication date
EP2392025B1 (en) 2013-09-04
CN102365707B (zh) 2015-02-04
CN102365707A (zh) 2012-02-29
EP2392025A1 (en) 2011-12-07
TW201034207A (en) 2010-09-16
WO2010088059A1 (en) 2010-08-05
KR20110107402A (ko) 2011-09-30
JP2012516573A (ja) 2012-07-19
EP2392025A4 (en) 2012-07-11
US20100186815A1 (en) 2010-07-29

Similar Documents

Publication Publication Date Title
EP2392025B1 (en) Photovoltaic device with improved crystal orientation
US9153730B2 (en) Solar cell front contact doping
US8519435B2 (en) Flexible photovoltaic cells having a polyimide material layer and method of producing same
US8043955B1 (en) Methods of forming a conductive transparent oxide film layer for use in a cadmium telluride based thin film photovoltaic device
US20110041917A1 (en) Doped Transparent Conductive Oxide
US20110139247A1 (en) Graded alloy telluride layer in cadmium telluride thin film photovoltaic devices and methods of manufacturing the same
US20100206372A1 (en) Photovoltaic Devices Including Heterojunctions
US9559247B2 (en) Photovoltaic device containing an N-type dopant source
TW201108452A (en) Photovoltaic devices including zinc
CN103563088A (zh) 本质上半透明的太阳能电池及其制造方法
TWI442582B (zh) 用於太陽能電池的氧化鎘鋅緩衝層
US8247683B2 (en) Thin film interlayer in cadmium telluride thin film photovoltaic devices and methods of manufacturing the same
EP2383362B1 (en) Devices and methods of protecting a cadmium sulfide layer for further processing
US8809105B2 (en) Method of processing a semiconductor assembly
WO2014074982A2 (en) Methods of annealing a conductive transparent oxide film layer for use in a thin film photovoltaic device
WO2015017629A1 (en) Finger structures protruding from absorber layer for improved solar cell back contact
WO2014078384A1 (en) Spatially distributed cds in thin film photovoltaic devices and their methods of manufacture

Legal Events

Date Code Title Description
MK5 Application lapsed section 142(2)(e) - patent request and compl. specification not accepted