KR20110063546A - 직접 패턴식 핀 홀 없는 마스킹 층을 사용하여 태양 전지를 제조하기 위한 방법 - Google Patents

직접 패턴식 핀 홀 없는 마스킹 층을 사용하여 태양 전지를 제조하기 위한 방법 Download PDF

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Publication number
KR20110063546A
KR20110063546A KR1020117008770A KR20117008770A KR20110063546A KR 20110063546 A KR20110063546 A KR 20110063546A KR 1020117008770 A KR1020117008770 A KR 1020117008770A KR 20117008770 A KR20117008770 A KR 20117008770A KR 20110063546 A KR20110063546 A KR 20110063546A
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KR
South Korea
Prior art keywords
masking layer
patterned
pinhole
layer
solar cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020117008770A
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English (en)
Korean (ko)
Inventor
피터 커진스
심-챠오 루안
Original Assignee
선파워 코포레이션
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Publication date
Application filed by 선파워 코포레이션 filed Critical 선파워 코포레이션
Publication of KR20110063546A publication Critical patent/KR20110063546A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/18—Working by laser beam, e.g. welding, cutting or boring using absorbing layers on the workpiece, e.g. for marking or protecting purposes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H10P76/2042—Photolithographic processes using lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/34—Coated articles ; Surface treated articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials
    • B23K2103/56—Inorganic materials other than metals or composite materials being semiconducting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Drying Of Semiconductors (AREA)
KR1020117008770A 2008-09-19 2009-07-17 직접 패턴식 핀 홀 없는 마스킹 층을 사용하여 태양 전지를 제조하기 위한 방법 Ceased KR20110063546A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/233,819 US20100071765A1 (en) 2008-09-19 2008-09-19 Method for fabricating a solar cell using a direct-pattern pin-hole-free masking layer
US12/233,819 2008-09-19

Publications (1)

Publication Number Publication Date
KR20110063546A true KR20110063546A (ko) 2011-06-10

Family

ID=42036391

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117008770A Ceased KR20110063546A (ko) 2008-09-19 2009-07-17 직접 패턴식 핀 홀 없는 마스킹 층을 사용하여 태양 전지를 제조하기 위한 방법

Country Status (6)

Country Link
US (1) US20100071765A1 (enExample)
EP (1) EP2329529A4 (enExample)
JP (2) JP2012503330A (enExample)
KR (1) KR20110063546A (enExample)
CN (1) CN102160192B (enExample)
WO (1) WO2010033296A1 (enExample)

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US8324015B2 (en) * 2009-12-01 2012-12-04 Sunpower Corporation Solar cell contact formation using laser ablation
US8211731B2 (en) * 2010-06-07 2012-07-03 Sunpower Corporation Ablation of film stacks in solar cell fabrication processes
US8586403B2 (en) 2011-02-15 2013-11-19 Sunpower Corporation Process and structures for fabrication of solar cells with laser ablation steps to form contact holes
US20140166094A1 (en) * 2012-12-18 2014-06-19 Paul Loscutoff Solar cell emitter region fabrication using etch resistant film
US8916038B2 (en) 2013-03-13 2014-12-23 Gtat Corporation Free-standing metallic article for semiconductors
US8936709B2 (en) 2013-03-13 2015-01-20 Gtat Corporation Adaptable free-standing metallic article for semiconductors
US8569096B1 (en) * 2013-03-13 2013-10-29 Gtat Corporation Free-standing metallic article for semiconductors
TWI631724B (zh) * 2013-03-13 2018-08-01 美商梅林太陽能科技股份有限公司 形成光伏打電池之方法
WO2014144967A1 (en) * 2013-03-15 2014-09-18 Sunpower Corporation Reduced contact resistance and improved lifetime of solar cells
WO2015159456A1 (ja) * 2014-04-16 2015-10-22 三菱電機株式会社 太陽電池および太陽電池の製造方法
US9461192B2 (en) 2014-12-16 2016-10-04 Sunpower Corporation Thick damage buffer for foil-based metallization of solar cells
CN107408599B (zh) * 2015-03-24 2020-11-27 松下知识产权经营株式会社 太阳能电池单元的制造方法
US10854767B2 (en) * 2015-03-31 2020-12-01 Kaneka Corporation Solar cell and method for manufacturing same
US20160380127A1 (en) * 2015-06-26 2016-12-29 Richard Hamilton SEWELL Leave-In Etch Mask for Foil-Based Metallization of Solar Cells
IT201900006740A1 (it) * 2019-05-10 2020-11-10 Applied Materials Inc Procedimenti di strutturazione di substrati
KR102858844B1 (ko) * 2020-11-24 2025-09-12 삼성디스플레이 주식회사 마스크, 마스크 제조 방법, 및 표시 패널 제조 방법
CN117374169B (zh) * 2023-12-07 2024-03-12 浙江晶科能源有限公司 背接触太阳能电池的制备方法及背接触太阳能电池
CN117673207B (zh) * 2024-02-01 2024-05-14 通威太阳能(眉山)有限公司 一种太阳电池的制备方法、太阳电池及光伏组件

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Also Published As

Publication number Publication date
US20100071765A1 (en) 2010-03-25
EP2329529A4 (en) 2017-10-11
JP2012503330A (ja) 2012-02-02
JP2014060430A (ja) 2014-04-03
WO2010033296A1 (en) 2010-03-25
CN102160192B (zh) 2014-03-12
EP2329529A1 (en) 2011-06-08
CN102160192A (zh) 2011-08-17

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