KR20110052697A - 리소그래피 장치 및 디바이스 제조 방법 - Google Patents

리소그래피 장치 및 디바이스 제조 방법 Download PDF

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Publication number
KR20110052697A
KR20110052697A KR1020117005438A KR20117005438A KR20110052697A KR 20110052697 A KR20110052697 A KR 20110052697A KR 1020117005438 A KR1020117005438 A KR 1020117005438A KR 20117005438 A KR20117005438 A KR 20117005438A KR 20110052697 A KR20110052697 A KR 20110052697A
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KR
South Korea
Prior art keywords
fluid
buffering fluid
backfill
supply
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020117005438A
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English (en)
Korean (ko)
Inventor
유스트 오텐스
요한네스 야콥스
Original Assignee
에이에스엠엘 네델란즈 비.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이에스엠엘 네델란즈 비.브이. filed Critical 에이에스엠엘 네델란즈 비.브이.
Publication of KR20110052697A publication Critical patent/KR20110052697A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

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  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020117005438A 2008-08-08 2009-07-22 리소그래피 장치 및 디바이스 제조 방법 Withdrawn KR20110052697A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13604608P 2008-08-08 2008-08-08
US61/136,046 2008-08-08

Publications (1)

Publication Number Publication Date
KR20110052697A true KR20110052697A (ko) 2011-05-18

Family

ID=41119894

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117005438A Withdrawn KR20110052697A (ko) 2008-08-08 2009-07-22 리소그래피 장치 및 디바이스 제조 방법

Country Status (7)

Country Link
US (1) US8994917B2 (https=)
JP (1) JP5529865B2 (https=)
KR (1) KR20110052697A (https=)
CN (1) CN102067039B (https=)
NL (1) NL2003258A1 (https=)
TW (1) TW201011484A (https=)
WO (1) WO2010015511A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101486407B1 (ko) * 2006-07-28 2015-01-26 마퍼 리쏘그라피 아이피 비.브이. 리소그래피 시스템, 방열 방법 및 프레임
JP5269128B2 (ja) * 2010-03-12 2013-08-21 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置および方法
JP5618588B2 (ja) * 2010-03-24 2014-11-05 キヤノン株式会社 インプリント方法
DE102011010462A1 (de) * 2011-01-28 2012-08-02 Carl Zeiss Laser Optics Gmbh Optische Anordnung für eine EUV-Projektionsbelichtungsanlage sowie Verfahren zum Kühlen eines optischen Bauelements
EP2515170B1 (en) * 2011-04-20 2020-02-19 ASML Netherlands BV Thermal conditioning system for thermal conditioning a part of a lithographic apparatus and a thermal conditioning method
JP5778093B2 (ja) * 2011-08-10 2015-09-16 エーエスエムエル ネザーランズ ビー．ブイ． 基板テーブルアセンブリ、液浸リソグラフィ装置及びデバイス製造方法
NL2009189A (en) * 2011-08-17 2013-02-19 Asml Netherlands Bv Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method.
CN105683839B (zh) 2013-09-27 2017-08-08 Asml荷兰有限公司 用于光刻设备的支撑台、光刻设备以及器件制造方法
US10095128B2 (en) 2014-12-22 2018-10-09 Asml Netherlands B.V. Thermal conditioning method
EP3575873A1 (en) * 2018-05-28 2019-12-04 ASML Netherlands B.V. Particle beam apparatus

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2928603B2 (ja) * 1990-07-30 1999-08-03 キヤノン株式会社 Ｘ線露光装置用ウエハ冷却装置
JP3623653B2 (ja) 1998-03-30 2005-02-23 大日本スクリーン製造株式会社 熱処理装置
DE19933798C2 (de) * 1999-07-19 2001-06-21 Siemens Ag Vorrichtung und Verfahren zur Abgasnachbehandlung bei einer Brennkraftmaschine
KR100351049B1 (ko) 1999-07-26 2002-09-09 삼성전자 주식회사 웨이퍼 가열 방법 및 이를 적용한 장치
US6666949B1 (en) 1999-11-19 2003-12-23 Thermodigm, Llc Uniform temperature workpiece holder
JP3814598B2 (ja) 2003-10-02 2006-08-30 キヤノン株式会社 温度調整装置、露光装置及びデバイス製造方法
DE602004008009T2 (de) * 2003-11-05 2008-04-30 Asml Netherlands B.V. Lithographischer Apparat
US20060096951A1 (en) 2004-10-29 2006-05-11 International Business Machines Corporation Apparatus and method for controlling process non-uniformity
JP4647401B2 (ja) * 2005-06-06 2011-03-09 東京エレクトロン株式会社 基板保持台、基板温度制御装置及び基板温度制御方法
US7652746B2 (en) * 2005-06-21 2010-01-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007027632A (ja) 2005-07-21 2007-02-01 Nikon Corp 光学装置及び露光装置、並びにデバイス製造方法
US7679033B2 (en) 2005-09-29 2010-03-16 Rosemount Inc. Process field device temperature control
US8092638B2 (en) * 2005-10-11 2012-01-10 Applied Materials Inc. Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution
JP2007317828A (ja) 2006-05-25 2007-12-06 Nikon Corp 冷却装置、移動装置及び処理装置、並びにリソグラフィシステム
KR101486407B1 (ko) 2006-07-28 2015-01-26 마퍼 리쏘그라피 아이피 비.브이. 리소그래피 시스템, 방열 방법 및 프레임
JP5172194B2 (ja) * 2007-04-04 2013-03-27 本田技研工業株式会社 燃料電池システム

Also Published As

Publication number Publication date
JP2011530804A (ja) 2011-12-22
TW201011484A (en) 2010-03-16
CN102067039B (zh) 2014-04-09
WO2010015511A1 (en) 2010-02-11
US20110128517A1 (en) 2011-06-02
JP5529865B2 (ja) 2014-06-25
CN102067039A (zh) 2011-05-18
NL2003258A1 (nl) 2010-02-09
US8994917B2 (en) 2015-03-31

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PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000