JP5529865B2 - 温度安定化システム、リソグラフィ投影装置、および温度制御方法 - Google Patents

温度安定化システム、リソグラフィ投影装置、および温度制御方法 Download PDF

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JP5529865B2
JP5529865B2 JP2011521513A JP2011521513A JP5529865B2 JP 5529865 B2 JP5529865 B2 JP 5529865B2 JP 2011521513 A JP2011521513 A JP 2011521513A JP 2011521513 A JP2011521513 A JP 2011521513A JP 5529865 B2 JP5529865 B2 JP 5529865B2
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buffer fluid
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JP2011530804A (ja
JP2011530804A5 (https=
Inventor
オッテンズ，ヨースト
ヤコブス，ヨハネス
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エーエスエムエル ネザーランズ ビー．ブイ．
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

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  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2011521513A 2008-08-08 2009-07-22 温度安定化システム、リソグラフィ投影装置、および温度制御方法 Expired - Fee Related JP5529865B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13604608P 2008-08-08 2008-08-08
US61/136,046 2008-08-08
PCT/EP2009/059413 WO2010015511A1 (en) 2008-08-08 2009-07-22 Lithographic apparatus and device manufacturing method

Publications (3)

Publication Number Publication Date
JP2011530804A JP2011530804A (ja) 2011-12-22
JP2011530804A5 JP2011530804A5 (https=) 2012-09-06
JP5529865B2 true JP5529865B2 (ja) 2014-06-25

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JP2011521513A Expired - Fee Related JP5529865B2 (ja) 2008-08-08 2009-07-22 温度安定化システム、リソグラフィ投影装置、および温度制御方法

Country Status (7)

Country Link
US (1) US8994917B2 (https=)
JP (1) JP5529865B2 (https=)
KR (1) KR20110052697A (https=)
CN (1) CN102067039B (https=)
NL (1) NL2003258A1 (https=)
TW (1) TW201011484A (https=)
WO (1) WO2010015511A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101486407B1 (ko) * 2006-07-28 2015-01-26 마퍼 리쏘그라피 아이피 비.브이. 리소그래피 시스템, 방열 방법 및 프레임
JP5269128B2 (ja) * 2010-03-12 2013-08-21 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置および方法
JP5618588B2 (ja) * 2010-03-24 2014-11-05 キヤノン株式会社 インプリント方法
DE102011010462A1 (de) * 2011-01-28 2012-08-02 Carl Zeiss Laser Optics Gmbh Optische Anordnung für eine EUV-Projektionsbelichtungsanlage sowie Verfahren zum Kühlen eines optischen Bauelements
EP2515170B1 (en) * 2011-04-20 2020-02-19 ASML Netherlands BV Thermal conditioning system for thermal conditioning a part of a lithographic apparatus and a thermal conditioning method
JP5778093B2 (ja) * 2011-08-10 2015-09-16 エーエスエムエル ネザーランズ ビー．ブイ． 基板テーブルアセンブリ、液浸リソグラフィ装置及びデバイス製造方法
NL2009189A (en) * 2011-08-17 2013-02-19 Asml Netherlands Bv Support table for a lithographic apparatus, lithographic apparatus and device manufacturing method.
CN105683839B (zh) 2013-09-27 2017-08-08 Asml荷兰有限公司 用于光刻设备的支撑台、光刻设备以及器件制造方法
US10095128B2 (en) 2014-12-22 2018-10-09 Asml Netherlands B.V. Thermal conditioning method
EP3575873A1 (en) * 2018-05-28 2019-12-04 ASML Netherlands B.V. Particle beam apparatus

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2928603B2 (ja) * 1990-07-30 1999-08-03 キヤノン株式会社 Ｘ線露光装置用ウエハ冷却装置
JP3623653B2 (ja) 1998-03-30 2005-02-23 大日本スクリーン製造株式会社 熱処理装置
DE19933798C2 (de) * 1999-07-19 2001-06-21 Siemens Ag Vorrichtung und Verfahren zur Abgasnachbehandlung bei einer Brennkraftmaschine
KR100351049B1 (ko) 1999-07-26 2002-09-09 삼성전자 주식회사 웨이퍼 가열 방법 및 이를 적용한 장치
US6666949B1 (en) 1999-11-19 2003-12-23 Thermodigm, Llc Uniform temperature workpiece holder
JP3814598B2 (ja) 2003-10-02 2006-08-30 キヤノン株式会社 温度調整装置、露光装置及びデバイス製造方法
DE602004008009T2 (de) * 2003-11-05 2008-04-30 Asml Netherlands B.V. Lithographischer Apparat
US20060096951A1 (en) 2004-10-29 2006-05-11 International Business Machines Corporation Apparatus and method for controlling process non-uniformity
JP4647401B2 (ja) * 2005-06-06 2011-03-09 東京エレクトロン株式会社 基板保持台、基板温度制御装置及び基板温度制御方法
US7652746B2 (en) * 2005-06-21 2010-01-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007027632A (ja) 2005-07-21 2007-02-01 Nikon Corp 光学装置及び露光装置、並びにデバイス製造方法
US7679033B2 (en) 2005-09-29 2010-03-16 Rosemount Inc. Process field device temperature control
US8092638B2 (en) * 2005-10-11 2012-01-10 Applied Materials Inc. Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution
JP2007317828A (ja) 2006-05-25 2007-12-06 Nikon Corp 冷却装置、移動装置及び処理装置、並びにリソグラフィシステム
KR101486407B1 (ko) 2006-07-28 2015-01-26 마퍼 리쏘그라피 아이피 비.브이. 리소그래피 시스템, 방열 방법 및 프레임
JP5172194B2 (ja) * 2007-04-04 2013-03-27 本田技研工業株式会社 燃料電池システム

Also Published As

Publication number Publication date
JP2011530804A (ja) 2011-12-22
TW201011484A (en) 2010-03-16
CN102067039B (zh) 2014-04-09
WO2010015511A1 (en) 2010-02-11
KR20110052697A (ko) 2011-05-18
US20110128517A1 (en) 2011-06-02
CN102067039A (zh) 2011-05-18
NL2003258A1 (nl) 2010-02-09
US8994917B2 (en) 2015-03-31

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