KR20110040222A - Fringe field switching liquid crystal display device and method of fabricating the same - Google Patents

Abstract

PURPOSE: A fringe field switching liquid crystal display device and a method for fabricating the same are provided to improve an aperture ratio by reducing a bonding margin through the application of a color filter on thin film transistor. CONSTITUTION: A method for fabricating a fringe field switching liquid crystal display device comprises the steps of: providing a first substrate which is classified into a pixel unit and a pad unit; forming a gate electrode(121) and a gate line, wherein the gate electrode comprises a first conductive film in a pixel unit on a first substrate; forming a first insulating film on the first substrate on which the gate electrode and gate line are formed; forming a data line which defines the pixel region; forming a second insulating film on the first substrate; forming a black matrix in the pixel unit on the first substrate; forming a third insulating film on the first substrate; forming a first contact hole by selectively removing the second and third insulating films; forming a third conductive film which is electrically connected to the drain electrode; forming a color filter in each pixel region; forming first and second pixel electrodes; forming a fourth insulating film on the first substrate; forming a common electrode to allow the pixel region to have plural slits; and bonding the first substrate with the second substrate.

Description

Fringe field type liquid crystal display device and manufacturing method therefor {FRINGE FIELD SWITCHING LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a fringe field type liquid crystal display device and a manufacturing method thereof, and more particularly, to a fringe field type liquid crystal display device using a color filter on thin film transistor structure and a method of manufacturing the same.

Recently, with increasing interest in information display and increasing demand for using a portable information carrier, a lightweight flat panel display (FPD), which replaces a conventional display device, a cathode ray tube (CRT), is used. The research and commercialization of Korea is focused on. In particular, the liquid crystal display (LCD) of the flat panel display device is an image representing the image using the optical anisotropy of the liquid crystal, is excellent in resolution, color display and image quality, and is actively applied to notebooks or desktop monitors have.

The liquid crystal display is largely composed of a color filter substrate and an array substrate, and a liquid crystal layer formed between the color filter substrate and the array substrate.

Hereinafter, a structure of a general liquid crystal display device will be described in detail with reference to FIG. 1.

1 is an exploded perspective view schematically illustrating a general liquid crystal display.

As shown in the figure, the liquid crystal display device is largely a liquid crystal layer (liquid crystal layer) formed between the color filter substrate 5 and the array substrate 10 and the color filter substrate 5 and the array substrate 10 ( 30).

The color filter substrate 5 has a color filter 7 composed of a plurality of sub-color filters for implementing colors of red (R), green (G), and blue (B) and the sub- It is composed of a black matrix (6) for separating the color filter and blocking the light passing through the liquid crystal layer 30, and a transparent common electrode (8) for applying a voltage to the liquid crystal layer (30).

In addition, the array substrate 10 may be arranged vertically and horizontally to define a plurality of gate lines 16 and data lines 17 defining a plurality of pixel regions P. The thin film transistor T, which is a switching element formed in the cross region, and the pixel electrode 18 formed on the pixel region P, are formed.

The color filter substrate 5 and the array substrate 10 configured as described above are joined to face each other by sealants (not shown) formed on the outer side of the image display area to form a liquid crystal display panel. 5) and the array substrate 10 are bonded through a bonding key (not shown) formed in the color filter substrate 5 or the array substrate 10.

At this time, the driving method generally used in the liquid crystal display device is a twisted nematic (TN) method for driving the nematic liquid crystal molecules in a vertical direction with respect to the substrate, but the liquid crystal display device of the twisted nematic method Has the disadvantage that the viewing angle is as narrow as 90 degrees. This is due to the refractive anisotropy of the liquid crystal molecules because the liquid crystal molecules oriented horizontally with the substrate are oriented almost perpendicular to the substrate when a voltage is applied to the liquid crystal display panel.

Accordingly, there is an in-plane switching (IPS) type liquid crystal display device in which the liquid crystal molecules are driven in a horizontal direction with respect to the substrate to improve the viewing angle to 170 degrees or more.

FIG. 2 is a plan view showing a portion of an array substrate of a transverse electric field type liquid crystal display device, wherein a fringe field formed between the pixel electrode and the common electrode penetrates the slit to drive liquid crystal molecules positioned on the pixel region and the common electrode. A portion of an array substrate of a typical fringe field switching (FFS) liquid crystal display is shown.

As shown in the drawing, a gate line 16 and a data line 17 are formed on an array substrate 10 of a typical fringe field type liquid crystal display device, which is arranged vertically and horizontally on the array substrate 10 to define a pixel area. The thin film transistor, which is a switching element, is formed at the intersection of the gate line 16 and the data line 17.

The thin film transistor includes a gate electrode 21 connected to the gate line 16, a source electrode 22 connected to the data line 17, and a drain electrode 23 connected to the pixel electrode 18. In addition, the thin film transistor is formed by a first insulating film (not shown) for insulation between the gate electrode 21 and the source / drain electrodes 22 and 23 and a gate voltage supplied to the gate electrode 21. An active pattern (not shown) for forming a conductive channel between the source electrode 22 and the drain electrode 23 is included.

A pixel electrode 18 and a common electrode 8 for forming a fringe field are formed in the pixel region, wherein the common electrode 8 is used together with the pixel electrode 18 to generate a fringe field. The common electrode 8 includes a plurality of slits 8s.

In this case, the box-shaped pixel electrode 18 is electrically connected to the drain electrode 23, and the common electrode 8 is formed in a single pattern over the entire pixel portion, and a plurality of pixel electrodes are formed in each pixel region. It is characterized by being formed to have a slit 8s.

3A to 3E are cross-sectional views sequentially illustrating a manufacturing process along the line II-II 'of the array substrate shown in FIG. 2, and FIG. 4 is formed by combining the array substrate and the color filter substrate illustrated in FIG. It is sectional drawing which shows schematically a general fringe field type liquid crystal display device.

As shown in FIG. 3A, the array substrate 10 is formed by depositing a first conductive film on the entire surface of the array substrate 10 and then selectively patterning the first conductive film through a photolithography process (first mask process). The gate electrode 21 is formed in the pixel portion of the.

Next, as shown in FIG. 3B, a first insulating film 15a, an amorphous silicon thin film, an n + amorphous silicon thin film, and a second conductive film are formed over the array substrate 10 on which the gate electrode 21 is formed.

Thereafter, the amorphous silicon thin film, the n + amorphous silicon thin film, and the second conductive film are selectively removed through a photolithography process (second mask process) to form an active pattern 24 including the amorphous silicon thin film on the gate electrode 21. The source electrode 22 and the drain electrode 23 formed of the second conductive layer are formed on the active pattern 24.

In this case, a data line 17 made of the second conductive layer is formed in the data line region of the array substrate 10 through the second mask process.

In this case, the n + amorphous silicon thin film is formed on the active pattern 24 to ohmic contact between the source / drain regions of the active pattern 24 and the source / drain electrodes 22 and 23. The ohmic contact layer 25n is formed.

The amorphous silicon thin film pattern 20 'and the n + amorphous silicon thin film pattern 25' formed of the amorphous silicon thin film and the n + amorphous silicon thin film and patterned in the same form as the data line 17 under the data line 17. ') Will be formed respectively.

Next, as illustrated in FIG. 3C, after depositing a third conductive film on the entire surface of the array substrate 10 on which the active patterns 24, the source / drain electrodes 22 and 23, and the data lines 17 are formed, By selectively patterning the third conductive film using a photolithography process (third mask process), a pixel electrode 18 electrically connected to the drain electrode 23 is formed in the pixel portion of the array substrate 10. .

Next, as shown in FIG. 3D, a second insulating film 15b is formed on the entire surface of the array substrate 10 on which the pixel electrode 18 is formed, and then selectively through a photolithography process (fourth mask process). By removing, a predetermined contact hole (not shown) is formed in a pad portion (not shown) of the array substrate 10.

As shown in FIG. 3E, after forming a fourth conductive film made of a transparent conductive material on the entire surface of the second insulating film 15b, the pixel is selectively patterned using a photolithography process (a fifth mask process). A common electrode 8 having a plurality of slits 8s is formed in the region.

In this case, the common electrode 8 is formed in a single pattern over the entire pixel portion, and a plurality of slits 8s are formed in the common electrode 8 in the pixel region in which the pixel electrode 18 is formed.

As illustrated in FIG. 4, the array substrate 10 formed as described above may be formed of the color filter substrate 5 by a sealant (not shown) formed outside the image display area in a state where a constant cell gap is maintained by the column spacer 50. In this case, the color filter substrate 5 has a black matrix 6, red, green, and green, which prevent light from leaking to the thin film transistor, the gate line (not shown), and the data line 17. A color filter 7 is formed to implement a blue color.

For reference, reference numerals 8 'and 9 denote rear indium tin oxide (ITO) and overcoat layers, respectively.

In this case, as the common fringe field type liquid crystal display has a common electrode on the data line, parasitic capacitance is generated between the data line and the common electrode. The parasitic capacitance causes a signal delay of the data line, and in order to prevent this, the thickness of the second insulating layer needs to be thickened to about 6000 mW.

In addition, as the size of the mother substrate for manufacturing the panel increases, productivity and profitability are improved, but the aperture ratio decreases due to an increase in the margin of bonding, that is, the width of the black matrix, in the panel manufacturing, thereby decreasing the luminance. In addition, the resolution has been limited, which is a factor that lowers the competitiveness.

An object of the present invention is to provide a fringe field type liquid crystal display device and a method for manufacturing the same, which reduce the adhesion margin and improve the aperture ratio by applying a color filter on thin film transistor structure.

Another object of the present invention is to provide a fringe field type liquid crystal display device and a method of manufacturing the same to reduce parasitic capacitance between a data line and a common electrode.

It is still another object of the present invention to provide a fringe field type liquid crystal display device and a method of manufacturing the same to remove the color hole process for contact between the pixel electrode and the drain electrode in applying the color filter on thin film transistor structure.

Further objects and features of the present invention will be described in the configuration and claims of the invention which will be described later.

In order to achieve the above object, the fringe field type liquid crystal display device of the present invention comprises a first substrate; A gate electrode and a gate line formed on the first substrate and formed of a first conductive film; A first insulating film formed on the first substrate on which the gate electrode and the gate line are formed; A data line formed on the first substrate on which the first insulating film is formed, and defining a pixel region intersecting with the source / drain electrode made of a silicon thin film, a second conductive film, and the gate line; A second insulating layer formed on the first substrate on which the active pattern, the source / drain electrode, and the data line are formed; A black matrix formed on the first substrate on which the second insulating film is formed and formed of a resin film; A third insulating film formed on the first substrate on which the black matrix is formed; A box-shaped first pixel electrode formed on the first substrate on which the third insulating film is formed and electrically connected to the drain electrode through a first contact hole formed in the second insulating film and the third insulating film; A color filter formed in each pixel region of the first substrate on which the first pixel electrode is formed, the color filter having a photoresist color resist; A second pixel electrode formed on a first substrate on which the color filter is formed and formed of a fourth conductive layer and connected to the first pixel electrode; A fourth insulating film formed on the first substrate on which the second pixel electrode is formed; A common electrode formed on the entire pixel portion of the first substrate on which the fourth insulating film is formed, the common electrode formed of a fifth conductive film and having a plurality of slits in the pixel region; And a second substrate bonded to and opposed to the first substrate.

A method of manufacturing a fringe field type liquid crystal display device according to the present invention comprises the steps of: providing a first substrate divided into a pixel portion and a pad portion; Forming a gate electrode and a gate line formed of a first conductive layer on the pixel portion of the first substrate; Forming a first insulating film on the first substrate on which the gate electrode and the gate line are formed; Forming a source / drain electrode including an active pattern and a second conductive layer on a pixel portion of the first substrate on which the first insulating layer is formed, and forming a data line crossing the gate line to define a pixel region; Forming a second insulating film on the first substrate on which the active pattern, the source / drain electrode, and the data line are formed; Forming a black matrix made of a resin film on the pixel portion of the first substrate on which the second insulating film is formed; Forming a third insulating film on the first substrate on which the black matrix is formed; Selectively removing the second insulating film and the third insulating film to form a first contact hole exposing a portion of the drain electrode; Forming a third conductive film electrically connected to the drain electrode through the first contact hole on the first substrate on which the third insulating film is formed; Forming a color filter made of color resist having photosensitive characteristics in each pixel region of the first substrate on which the third conductive film is formed; After forming a fourth conductive film on the entire surface of the first substrate on which the color filter is formed, the third conductive film and the fourth conductive film are selectively patterned to selectively pattern the third conductive film and the fourth conductive film. Forming a box-shaped first pixel electrode and a second pixel electrode made of a conductive film; Forming a fourth insulating film on the first substrate on which the second pixel electrode is formed; Forming a common electrode formed of a fifth conductive layer on the entire pixel portion of the first substrate on which the fourth insulating film is formed, and forming the common electrode to have a plurality of slits in the pixel region; And bonding the first substrate and the second substrate to each other.

As described above, the fringe field type liquid crystal display device and the method of manufacturing the same according to the present invention provide an effect of improving brightness and image quality by reducing the adhesion margin to improve the aperture ratio.

In addition, the fringe field type liquid crystal display device and the method of manufacturing the same according to the present invention can reduce the parasitic capacitance between the data line and the common electrode by applying a color filter on thin film transistor structure to form a black matrix on the data line. do. As a result, an effect of preventing signal delay of the data line can be obtained.

In addition, the fringe field type liquid crystal display device and the method of manufacturing the same according to the present invention form first and second pixel electrodes before and after the color filter is formed on the array substrate so as to be connected to each other, thereby reducing the aperture ratio and deteriorating contact characteristics. The color hole forming process can be eliminated. As a result, process stability is provided.

In addition, the fringe field type liquid crystal display device and the method of manufacturing the same according to the present invention have a color filter surrounded by the first and second pixel electrodes and an insulating film is formed thereon, whereby the contact between the color filter and the liquid crystal molecules is blocked and the color is removed. It is possible to prevent defects such as stains caused by the fume of the filter.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the fringe field type liquid crystal display device and a method of manufacturing the same.

FIG. 5 is a plan view schematically illustrating a portion of an array substrate of a fringe field type liquid crystal display device according to an exemplary embodiment of the present invention, in which a fringe field formed between the pixel electrode and the common electrode penetrates a slit and is disposed on the pixel region and the pixel electrode. A portion of an array substrate of a fringe field type liquid crystal display device which realizes an image by driving liquid crystal molecules positioned is shown.

For reference, for convenience of description, one pixel constituted by a red (R) sub-color filter is shown as an example, and in the actual liquid crystal display, M gate lines and N data lines cross each other. Although NxM pixels exist, one pixel is shown in the figure for simplicity of explanation.

As shown in the figure, a gate line 116 and a data line 117 are formed on the array substrate 110 according to an embodiment of the present invention, which are arranged vertically and horizontally on the array substrate 110 to define a pixel region. have. In addition, a thin film transistor, which is a switching element, is formed in an intersection area between the gate line 116 and the data line 117, and a plurality of slits for driving a liquid crystal (not shown) by generating a fringe field in the pixel area. A common electrode 108 having 108s and pixel electrodes 118 'and 118 "in the form of a box are formed.

The thin film transistor includes the pixel electrode 118 ′ and 118 ″ through a gate electrode 121 connected to the gate line 116, a source electrode 122 connected to the data line 117, and a first contact hole 140a. The thin film transistor includes a first insulating film (not shown) for insulation between the gate electrode 121 and the source / drain electrodes 122 and 123. And an active pattern (not shown) for forming a conductive channel between the source electrode 122 and the drain electrode 123 by the gate voltage supplied to the gate electrode 121.

Here, the fringe field type liquid crystal display device according to the embodiment of the present invention may be a fringe field type liquid crystal display device which drives a liquid crystal molecule by inducing a fringe field, which is a parabolic transverse electric field, in the liquid crystal layer. It is shown.

As described above, the common electrode 108 and the pixel electrodes 118 'and 118 "for forming a fringe field are formed in the pixel region, wherein the pixel electrodes 118' and 118" have a color filter. The common electrode 108 is formed in a box shape in the formed pixel region, and the common electrode 108 is formed to have a plurality of slits 108s in each pixel region while being formed in a single pattern over the entire pixel portion. It is done. Here, the pixel electrodes 118 ′ and 118 ″ may be divided into a second pixel electrode 118 ″ and a first pixel electrode 118 ′ formed on and under the color filter, respectively. Is surrounded by the first pixel electrode 118 ′ and the second pixel electrode 118 ″, and a fourth insulating film (not shown) is formed thereon, whereby contact between the color filter and the liquid crystal molecules is blocked and thus the fume of the color filter It is possible to prevent defects such as stains caused by fume.

In this case, as described above, FIG. 5 illustrates one pixel configured as a red (R) sub-color filter, but the present invention is not limited thereto.

As such, when the common electrode 108 is formed in a single pattern over the entire pixel portion, the common electrode 108 may be electrically connected between the common electrodes 108 as compared with the case in which the common electrode 108 is formed in each pixel region. There is no need to form a common line. As a result, the number of masks required to fabricate the array substrate 110 can be reduced.

In addition, the opaque common line is removed as described above, and the common electrode 108 is formed on the data line 117, while the black matrix 106 is formed between the data line 117 and the common electrode 108. As interposed, the opening ratio is improved. In other words, the fringe field type liquid crystal display according to the embodiment of the present invention reduces the adhesion margin by applying a color filter on thin film transistor structure in which the color filter and the black matrix 106 are formed together on the array substrate 110. As the common electrode 108 is also formed on the data line 117 to apply the fringe field, the aperture ratio may be improved. In addition, by forming the black matrix 106 on the data line 117, parasitic capacitance between the data line 117 and the common electrode 108 may be reduced in the fringe field type liquid crystal display. As a result, an effect of preventing signal delay of the data line 117 may be obtained.

In addition, as described above, the fringe field type liquid crystal display device according to the exemplary embodiment of the present invention may have the first and second pixel electrodes 118 ′ and 118 ″ before and after forming the color filter on the array substrate 110. By forming and connecting to each other, it is possible to eliminate the process of forming a color hole, which leads to a decrease in aperture ratio and a decrease in contact characteristics, thereby providing an effect of securing process stability.

On the other hand, the gate pad electrode 126p and the data pad electrode 127p electrically connected to the gate line 116 and the data line 117 are formed in the edge region of the array substrate 110 configured as described above. The scan signal and the data signal applied from an external driving circuit portion (not shown) are transferred to the gate line 116 and the data line 117, respectively.

That is, the gate line 116 and the data line 117 extend toward the driving circuit part and are connected to the corresponding gate pad line 116p and the data pad line 117p, respectively, and the gate pad line 116p and the data pad A line 117p is a scan signal and a data signal from a driving circuit unit through a gate pad electrode 126p and a data pad electrode 127p electrically connected to the gate pad line 116p and the data pad line 117p, respectively. You will be authorized.

For reference, reference numerals 140b and 140c indicate a second contact hole and a third contact hole formed in the fourth insulating layer, wherein the data pad electrode 127p is connected to the data pad line through the second contact hole 140b. It is electrically connected to 117p. In addition, the gate pad electrode 126p is electrically connected to the gate pad line 116p through the third contact hole 140c.

Hereinafter, a method of manufacturing a fringe field type liquid crystal display device configured as described above will be described in detail with reference to the accompanying drawings.

6A through 6H are cross-sectional views sequentially illustrating a manufacturing process along lines Va-Va ′, Vb-Vb, and Vc-Vc of the array substrate illustrated in FIG. 5, and a process of manufacturing an array substrate of a pixel portion on the left side. The right side shows the process of manufacturing an array substrate of a data pad part and a gate pad part in order, for example.

7A to 7H are plan views sequentially illustrating a manufacturing process of the array substrate illustrated in FIG. 5.

6A and 7A, a gate electrode 121 and a gate line 116 are formed in a pixel portion of the array substrate 110 made of a transparent insulating material such as glass, and the array substrate 110 may be formed. A gate pad line 116p is formed in the gate pad portion.

In this case, the gate electrode 121, the gate line 116, and the gate pad line 116p are selectively deposited through a photolithography process (first mask process) after depositing a first conductive layer on the entire surface of the array substrate 110. It is formed by patterning.

Here, the first conductive layer may include aluminum (Al), aluminum alloy (Al alloy), tungsten (W), copper (Cu), chromium (Cr), molybdenum (Mo), and Low resistance opaque conductive materials such as molybdenum alloys can be used. In addition, the first conductive layer may have a multilayer structure in which two or more low resistance conductive materials are stacked.

Next, as illustrated in FIGS. 6B and 7B, the first insulating layer 115a and the amorphous layer are formed on the entire surface of the array substrate 110 on which the gate electrode 121, the gate line 116, and the gate pad line 116p are formed. A silicon thin film, an n + amorphous silicon thin film and a second conductive film are formed.

In this case, the second conductive layer may be made of a low resistance opaque conductive material such as aluminum, aluminum alloy, tungsten, copper, chromium, molybdenum and molybdenum alloy to form a source electrode, a drain electrode, and a data line. In addition, the second conductive layer may have a multilayer structure in which two or more low resistance conductive materials are stacked.

Thereafter, the amorphous silicon thin film, the n + amorphous silicon thin film, and the second conductive film are selectively removed through a photolithography process (second mask process) to form an active pattern including the amorphous silicon thin film in the pixel portion of the array substrate 110 ( 124 is formed, and a source electrode 122 and a drain electrode 123 formed of the second conductive layer are formed on the active pattern 124.

In this case, the data line 117 formed of the second conductive layer is formed in the data line region of the array substrate 110 through the second mask process, and the data pad portion of the array substrate 110 is formed. A data pad line 117p made of two conductive films is formed.

In this case, the n + amorphous silicon thin film is formed on the active pattern 124, and ohmic contact between the source / drain region of the active pattern 124 and the source / drain electrodes 122 and 123. The ohmic contact layer 125n is formed.

In addition, the first amorphous silicon thin film pattern 120 ′ and the first n + formed of the amorphous silicon thin film and the n + amorphous silicon thin film under the data line 117 and patterned in substantially the same shape as the data line 117. Amorphous silicon thin film patterns 125 ′ are formed, respectively. In addition, the second amorphous silicon thin film pattern 120 ″ formed of the amorphous silicon thin film and the n + amorphous silicon thin film and patterned in substantially the same shape as the data pad line 117p is formed below the data pad line 117p. 2 n + amorphous silicon thin film patterns 125 ″ are formed, respectively.

Here, the active pattern 124, the source / drain electrodes 122 and 123, and the data line 117 according to an exemplary embodiment of the present invention use a half-tone mask to perform one mask process (second mask process). Through this can be formed at the same time. However, the present invention is not limited thereto, and the active pattern 124, the source / drain electrodes 122 and 123, and the data line 117 may be formed through two mask processes.

Next, as illustrated in FIGS. 6C and 7C, the second insulating layer 115b is formed on the entire surface of the array substrate 110 on which the active patterns 124, the source / drain electrodes 122 and 123, and the data lines 117 are formed. ).

After the deposition or coating of a predetermined resin film capable of blocking light on the entire surface of the array substrate 110 including the second insulating film 115b, the resin film may be selectively selected through a photolithography process (third mask process). As a result, a predetermined black matrix 106 is formed in the thin film transistor region except for the upper portion of the gate line 116 and the data line 117 and a part of the drain electrode 123.

6D and 7D, after forming the third insulating film 115c on the entire surface of the array substrate 110 on which the black matrix 106 is formed, the photolithography process (fourth mask process) is performed. The first contact hole 140a exposing a part of the drain electrode 123 is formed in the pixel portion of the array substrate 110 by selectively removing the same through the semiconductor substrate.

In this case, a portion of the data pad line 117p is exposed to the data pad portion of the array substrate 110 by selectively removing the second insulating film 115b and the third insulating film 115c through the fourth mask process. And forming a first hole H1 to selectively remove the first insulating film 115a, the second insulating film 115b, and the third insulating film 115c, so that the gate pad portion of the array substrate 110 A second hole H2 exposing a portion of the gate pad line 116p is formed.

6E and 7E, the third conductive layer 130 is formed on the entire surface of the array substrate 110 on which the third insulating layer 115c is formed.

In this case, the third conductive layer 130 of the pixel portion is electrically connected to the drain electrode 123 thereunder through the first contact hole, and the third conductive layer 130 of the pad portion is the first hole. And electrically connect to the data pad line 117p and the gate pad line 116p under the second hole, respectively.

In this case, the third conductive layer 130 is a transparent material having excellent transmittance such as indium tin oxide (ITO) or indium zinc oxide (IZO) to form the first pixel electrode. Contains conductive material.

Next, a color resist having a photosensitive characteristic is coated on the entire surface of the array substrate 110 on which the third conductive layer 130 is formed and irradiated with light using a mask (a fifth to seventh mask process), and then a developer is applied. By forming a desired pattern, color filters 107 of red (R), green (G) and blue (B) are formed in each pixel region.

As such, the fringe field type liquid crystal display according to the exemplary embodiment of the present invention applies the color filter on thin film transistor structure in which the black matrix 106 and the color filter 107 are formed together on the array substrate 110. Since the bonding margin does not need to be considered when the 110 and the color filter substrate (not shown) are bonded, the width of the black matrix 106 may be minimized, thereby substantially improving the aperture ratio.

6F and 7F, after forming a fourth conductive film on the entire surface of the array substrate 110 on which the color filter 107 is formed, the photolithography process (the eighth mask process) is used. By selectively patterning a third conductive film and a fourth conductive film, the first pixel electrode 118 ′ and the second pixel electrode formed of the third conductive film and the fourth conductive film, respectively, in the pixel portion of the array substrate 110. 118 ").

In this case, by selectively patterning the third conductive layer and the fourth conductive layer through the eighth mask process, the first conductive layer is formed of the third conductive layer and the fourth conductive layer, respectively, in the data pad portion of the array substrate 110. A data pad connecting electrode 127p 'and a second data pad connecting electrode 127p "are formed, and a first pad made of the third conductive film and the fourth conductive film, respectively, in the gate pad portion of the array substrate 110. The gate pad connecting electrode 126p 'and the second gate pad connecting electrode 126p "are formed.

The fourth conductive layer may include a transparent conductive material having excellent transmittance such as indium tin oxide or indium zinc oxide to form the second pixel electrode.

In this case, the second pixel electrode 118 ″ and the first pixel electrode 118 ′ are formed on and under the color filter 107, respectively, to surround the color filter 107. A box shape is formed in the pixel area so as to overlap a portion of the gate line 116 and the data line 117.

The first data pad connecting electrode 127p 'and the second data pad connecting electrode 127p "are electrically connected to the data pad line 117p at the lower portion thereof through the first hole. The pad connecting electrode 126p 'and the second gate pad connecting electrode 126p "are electrically connected to the gate pad line 116p below through the second hole.

Next, as shown in FIGS. 6G and 7G, the first and second pixel electrodes 118 ′ and 118 ″, the first and second data pad connection electrodes 127p ′ and 127p ″, and The fourth insulating layer 115d is formed on the entire surface of the array substrate 110 on which the second gate pad connection electrodes 126p 'and 126p "are formed, and then selectively removed by a photolithography process (a ninth mask process). A second contact hole 140b exposing portions of the second data pad connection electrode 127p ″ and the second gate pad connection electrode 126p ″ respectively of the data pad part and the gate pad part of the array substrate 110; The third contact hole 140c is formed.

6H and 7H, after forming a fifth conductive film made of a transparent conductive material on the entire surface of the fourth insulating film 115d where the second contact hole and the third contact hole are formed, a photolithography process ( The common electrode 108 having a plurality of slits 108s is formed in the pixel area by selectively patterning the semiconductor layer 10 by using a tenth mask process.

In this case, by selectively patterning the fifth conductive layer using the tenth mask process, the second data pad connection electrode 127p through the second contact hole and the third contact hole, respectively, in the data pad part and the gate pad part. And the second gate pad connecting electrode 126p, that is, the data pad electrode 127p and the gate pad electrode 126p which are electrically connected to the data pad line 117p and the gate pad line 116p substantially below. ).

In this case, the fifth conductive layer is a transparent conductive material having excellent transmittance such as indium tin oxide or indium zinc oxide to form the common electrode 108, the data pad electrode 127p, and the gate pad electrode 126p. It includes.

In addition, the common electrode 108 according to the embodiment of the present invention is formed in a single pattern over the entire pixel portion, and the common electrode 108 is formed in the pixel region in which the pixel electrodes 118 'and 118 "are formed. A plurality of slits 108s are formed.

In this case, since the common electrode 108 is formed in a single pattern over the entire pixel portion, the common electrode 108 is also formed on the gate line 116, the data line 117, and the thin film transistor, in which the plurality of slits 108s are not formed. It is characterized by that. For reference, the pixel unit refers to an image display area of the array substrate 110 in which all pixel areas are collected to display an image.

FIG. 8 is a schematic cross-sectional view of a fringe field type liquid crystal display device according to an exemplary embodiment of the present invention in which the array substrate and the color filter substrate illustrated in FIG. 6H are bonded to each other.

As shown in the figure, the array substrate 110 according to the embodiment of the present invention is a color filter by a sealant (not shown) formed on the outside of the image display area in a state where a constant cell gap is maintained by the column spacer 150. The substrate 105 is bonded to the substrate 105.

For reference, reference numeral 108 ′ indicates the back ITO.

Here, the fringe field type liquid crystal display device according to the embodiment of the present invention has been described using an amorphous silicon thin film transistor using an amorphous silicon thin film as an active pattern, for example, but the present invention is not limited thereto. The present invention also applies to polycrystalline silicon thin film transistors using polycrystalline silicon thin films.

In addition, the present invention can be used not only in liquid crystal display devices but also in other display devices fabricated using thin film transistors, for example, organic light emitting display devices in which organic light emitting diodes (OLEDs) are connected to driving transistors. have.

Many details are set forth in the foregoing description but should be construed as illustrative of preferred embodiments rather than to limit the scope of the invention. Therefore, the invention should not be defined by the described embodiments, but should be defined by the claims and their equivalents.

1 is an exploded perspective view schematically showing a general liquid crystal display device.

2 is a plan view showing a part of an array substrate of a typical fringe field type liquid crystal display device.

3A to 3E are cross-sectional views sequentially illustrating a manufacturing process along the line II-II ′ of the array substrate shown in FIG. 2.

4 is a cross-sectional view schematically illustrating a typical fringe field type liquid crystal display device in which the array substrate and the color filter substrate illustrated in FIG. 3E are bonded to each other.

5 is a plan view schematically illustrating a portion of an array substrate of a fringe field type liquid crystal display device according to an exemplary embodiment of the present invention.

6A to 6H are cross-sectional views sequentially illustrating a manufacturing process along lines Va-Va ', Vb-Vb, and Vc-Vc of the array substrate shown in FIG.

7A to 7H are plan views sequentially illustrating a manufacturing process of the array substrate illustrated in FIG. 5.

8 is a schematic cross-sectional view of a fringe field type liquid crystal display device according to an exemplary embodiment of the present invention in which the array substrate and the color filter substrate illustrated in FIG. 6H are bonded to each other.

DESCRIPTION OF REFERENCE NUMERALS

105: color filter substrate 106: black matrix

107: color filter 108: common electrode

108s: slit 110: array substrate

116: gate line 117: data line

118 ', 118 ": pixel electrode 121: gate electrode

122 source electrode 123 drain electrode

Claims (15)

Providing a first substrate divided into a pixel portion and a pad portion; Forming a gate electrode and a gate line formed of a first conductive layer on the pixel portion of the first substrate; Forming a first insulating film on the first substrate on which the gate electrode and the gate line are formed; Forming a source / drain electrode including an active pattern and a second conductive layer on a pixel portion of the first substrate on which the first insulating layer is formed, and forming a data line crossing the gate line to define a pixel region; Forming a second insulating film on the first substrate on which the active pattern, the source / drain electrode, and the data line are formed; Forming a black matrix made of a resin film on the pixel portion of the first substrate on which the second insulating film is formed; Forming a third insulating film on the first substrate on which the black matrix is formed; Selectively removing the second insulating film and the third insulating film to form a first contact hole exposing a portion of the drain electrode; Forming a third conductive film electrically connected to the drain electrode through the first contact hole on the first substrate on which the third insulating film is formed; Forming a color filter formed of a color register having a photosensitive characteristic in each pixel region of the first substrate on which the third conductive film is formed; After forming a fourth conductive film on the entire surface of the first substrate on which the color filter is formed, the third conductive film and the fourth conductive film are selectively patterned to selectively pattern the third conductive film and the fourth conductive film. Forming a box-shaped first pixel electrode and a second pixel electrode made of a conductive film; Forming a fourth insulating film on the first substrate on which the second pixel electrode is formed; Forming a common electrode formed of a fifth conductive layer on the entire pixel portion of the first substrate on which the fourth insulating film is formed, and forming the common electrode to have a plurality of slits in the pixel region; And A method of manufacturing a fringe field type liquid crystal display device comprising the step of bonding the first substrate and the second substrate. The fringe field type liquid crystal display of claim 1, further comprising forming a gate pad line on the pad portion by using the first conductive layer when forming the gate electrode and the gate line. Manufacturing method. The fringe field of claim 2, further comprising forming a data pad line on the pad part by using the second conductive layer when forming the active pattern, the source / drain electrode, and the data line. Method of manufacturing a type liquid crystal display device. 2. The method of claim 1, wherein the black matrix is formed in a thin film transistor region except for a portion of the gate line, the data line, and a portion of the drain electrode. 4. The method of claim 3, wherein the second insulating layer and the third insulating layer are selectively removed when the first contact hole is formed to form a first hole exposing a portion of the data pad line. And selectively removing the insulating film and the third insulating film to form a second hole exposing a portion of the gate pad line. 6. The fringe field type liquid crystal of claim 5, wherein the third conductive layer is electrically connected to the data pad line through the first hole and electrically connected to the gate pad line through the second hole. Method for manufacturing a display device. The color filter of claim 1, wherein a color resist having a photosensitive characteristic is coated on the entire surface of the first substrate on which the third conductive film is formed, and light is irradiated using a mask. Method of manufacturing a fringe field type liquid crystal display device, characterized in that to form a. The method of claim 5, wherein the third conductive film and the fourth conductive film are selectively patterned when the first pixel electrode and the second pixel electrode are formed to respectively form the third conductive film and the third conductive film. Forming a first data pad connecting electrode and a second data pad connecting electrode formed of a fourth conductive film, and forming a first gate pad connecting electrode and a second gate pad connecting electrode formed of the third conductive film and the fourth conductive film, respectively. A method of manufacturing a fringe field type liquid crystal display further comprising the step of forming. The display device of claim 1, wherein the second pixel electrode and the first pixel electrode are formed above and below the color filter to surround the color filter, and overlap the portion of the gate line and the data line below the color filter. A fringe field type liquid crystal display device, characterized in that formed in the box area in the pixel area. 10. The display device of claim 8, wherein the first data pad connection electrode and the second data pad connection electrode are electrically connected to a lower data pad line through the first hole, and the first gate pad connection electrode and the second gate. And a pad connection electrode is electrically connected to a gate pad line under the second hole through the second hole. The second contact hole and the third contact hole of claim 8, wherein the fourth insulating layer is selectively removed to expose portions of the second data pad connection electrode and the second gate pad connection electrode, respectively, in the pad portion of the first substrate. A method of manufacturing a fringe field type liquid crystal display further comprising the step of forming a contact hole. The second data pad connecting electrode and the second gate through the second contact hole and the third contact hole, respectively, by selectively patterning the fifth conductive layer when forming the common electrode. A method of manufacturing a fringe field type liquid crystal display device further comprising the step of forming a data pad electrode and a gate pad electrode electrically connected to the pad connection electrode. A first substrate; A gate electrode and a gate line formed on the first substrate and formed of a first conductive film; A first insulating film formed on the first substrate on which the gate electrode and the gate line are formed; A data line formed on the first substrate on which the first insulating film is formed, and defining a pixel region intersecting with the source / drain electrode made of a silicon thin film, a second conductive film, and the gate line; A second insulating layer formed on the first substrate on which the active pattern, the source / drain electrode, and the data line are formed; A black matrix formed on the first substrate on which the second insulating film is formed and formed of a resin film; A third insulating film formed on the first substrate on which the black matrix is formed; A box-shaped first pixel electrode formed on the first substrate on which the third insulating film is formed and electrically connected to the drain electrode through a first contact hole formed in the second insulating film and the third insulating film; A color filter formed in each pixel region of the first substrate on which the first pixel electrode is formed, the color filter having a photoresist color resist; A second pixel electrode formed on a first substrate on which the color filter is formed and formed of a fourth conductive layer and connected to the first pixel electrode; A fourth insulating film formed on the first substrate on which the second pixel electrode is formed; A common electrode formed on the entire pixel portion of the first substrate on which the fourth insulating film is formed, the common electrode formed of a fifth conductive film and having a plurality of slits in the pixel region; And A fringe field type liquid crystal display device comprising a second substrate bonded to and opposed to the first substrate. The fringe field type liquid crystal display of claim 13, wherein the black matrix is formed in a thin film transistor region except for a portion of the gate line, the data line, and the drain electrode. The method of claim 13, wherein the second pixel electrode and the first pixel electrode are formed on and under the color filter, respectively, to surround the color filter, and overlap the portion of the gate line and the data line below the color filter. A fringe field type liquid crystal display device having a box shape in the pixel area.

Images