KR20110028530A - 낮은 점도 유체를 사용하여 입자를 제거하기 위한 단일의 기판 프로세싱 헤드 - Google Patents

낮은 점도 유체를 사용하여 입자를 제거하기 위한 단일의 기판 프로세싱 헤드 Download PDF

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Publication number
KR20110028530A
KR20110028530A KR1020117002399A KR20117002399A KR20110028530A KR 20110028530 A KR20110028530 A KR 20110028530A KR 1020117002399 A KR1020117002399 A KR 1020117002399A KR 20117002399 A KR20117002399 A KR 20117002399A KR 20110028530 A KR20110028530 A KR 20110028530A
Authority
KR
South Korea
Prior art keywords
fluid
substrate
main bore
feeds
reservoir
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020117002399A
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English (en)
Korean (ko)
Inventor
아놀드 콜로덴코
청-유 린
레온 긴즈버그
마크 만델보임
그레고리 에이 토마슈
앤워 후세인
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20110028530A publication Critical patent/KR20110028530A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0404—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0456—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3306—Horizontal transfer of a single workpiece
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/85938—Non-valved flow dividers

Landscapes

  • Coating Apparatus (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020117002399A 2008-06-30 2009-06-30 낮은 점도 유체를 사용하여 입자를 제거하기 위한 단일의 기판 프로세싱 헤드 Withdrawn KR20110028530A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/165,577 2008-06-30
US12/165,577 US8584613B2 (en) 2008-06-30 2008-06-30 Single substrate processing head for particle removal using low viscosity fluid

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020117006691A Division KR101632974B1 (ko) 2008-06-30 2009-06-30 낮은 점도 유체를 사용하여 입자를 제거하기 위한 단일의 기판 프로세싱 헤드

Publications (1)

Publication Number Publication Date
KR20110028530A true KR20110028530A (ko) 2011-03-18

Family

ID=41445969

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020117002399A Withdrawn KR20110028530A (ko) 2008-06-30 2009-06-30 낮은 점도 유체를 사용하여 입자를 제거하기 위한 단일의 기판 프로세싱 헤드
KR1020117006691A Expired - Fee Related KR101632974B1 (ko) 2008-06-30 2009-06-30 낮은 점도 유체를 사용하여 입자를 제거하기 위한 단일의 기판 프로세싱 헤드

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020117006691A Expired - Fee Related KR101632974B1 (ko) 2008-06-30 2009-06-30 낮은 점도 유체를 사용하여 입자를 제거하기 위한 단일의 기판 프로세싱 헤드

Country Status (7)

Country Link
US (2) US8584613B2 (https=)
JP (1) JP2011527123A (https=)
KR (2) KR20110028530A (https=)
CN (1) CN102105967B (https=)
SG (1) SG192443A1 (https=)
TW (1) TWI423366B (https=)
WO (1) WO2010002905A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7849554B2 (en) * 2009-04-28 2010-12-14 Lam Research Corporation Apparatus and system for cleaning substrate
CN106999962B (zh) * 2014-09-11 2019-11-15 亨茨曼国际有限公司 设计和制造分配棒的方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4276011A (en) * 1979-02-21 1981-06-30 American Cyanamid Company Spinnerette assembly
US5618566A (en) * 1995-04-26 1997-04-08 Exxon Chemical Patents, Inc. Modular meltblowing die
SG45121A1 (en) * 1995-10-28 1998-01-16 Inst Of Microelectronics Apparatus for dispensing fluid in an array pattern
US6220843B1 (en) * 1998-03-13 2001-04-24 Nordson Corporation Segmented die for applying hot melt adhesives or other polymer melts
US6689215B2 (en) * 1998-09-17 2004-02-10 Asml Holdings, N.V. Method and apparatus for mitigating cross-contamination between liquid dispensing jets in close proximity to a surface
US7000622B2 (en) * 2002-09-30 2006-02-21 Lam Research Corporation Methods and systems for processing a bevel edge of a substrate using a dynamic liquid meniscus
JP3955197B2 (ja) * 2001-09-28 2007-08-08 アルプス電気株式会社 ウエット処理用ノズルおよびウエット処理装置
US7093375B2 (en) * 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US20050260789A1 (en) * 2004-05-21 2005-11-24 Texas Instruments Incorporated Method and system for applying an adhesive substance on an electronic device
JP4343031B2 (ja) * 2004-05-31 2009-10-14 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2008543557A (ja) 2005-06-23 2008-12-04 アクゾ ノーベル コーティングス インテルナショナール ベー．ファオ． ディスペンサー
JP2007158161A (ja) * 2005-12-07 2007-06-21 Elpida Memory Inc ウエハ洗浄装置及びウエハ洗浄方法
US20080038448A1 (en) * 2006-08-11 2008-02-14 Lam Research Corp. Chemical resistant semiconductor processing chamber bodies

Also Published As

Publication number Publication date
US20140041581A1 (en) 2014-02-13
US8584613B2 (en) 2013-11-19
WO2010002905A1 (en) 2010-01-07
TWI423366B (zh) 2014-01-11
SG192443A1 (en) 2013-08-30
TW201009981A (en) 2010-03-01
CN102105967A (zh) 2011-06-22
US20090320942A1 (en) 2009-12-31
KR20110044327A (ko) 2011-04-28
JP2011527123A (ja) 2011-10-20
CN102105967B (zh) 2014-10-08
KR101632974B1 (ko) 2016-06-23

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