KR20110005207A - 동함유 재료용 에칭제 조성물 및 동함유 재료의 에칭 방법 - Google Patents
동함유 재료용 에칭제 조성물 및 동함유 재료의 에칭 방법 Download PDFInfo
- Publication number
- KR20110005207A KR20110005207A KR1020100058478A KR20100058478A KR20110005207A KR 20110005207 A KR20110005207 A KR 20110005207A KR 1020100058478 A KR1020100058478 A KR 1020100058478A KR 20100058478 A KR20100058478 A KR 20100058478A KR 20110005207 A KR20110005207 A KR 20110005207A
- Authority
- KR
- South Korea
- Prior art keywords
- copper
- etching
- acid
- mass
- containing material
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
- H05K3/062—Etching masks consisting of metals or alloys or metallic inorganic compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2009-162717 | 2009-07-09 | ||
JP2009162717A JP5443863B2 (ja) | 2009-07-09 | 2009-07-09 | 銅含有材料用エッチング剤組成物及び銅含有材料のエッチング方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020160070469A Division KR101697460B1 (ko) | 2009-07-09 | 2016-06-07 | 동함유 재료용 에칭제 조성물 및 동함유 재료의 에칭 방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20110005207A true KR20110005207A (ko) | 2011-01-17 |
Family
ID=43452635
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020100058478A KR20110005207A (ko) | 2009-07-09 | 2010-06-21 | 동함유 재료용 에칭제 조성물 및 동함유 재료의 에칭 방법 |
KR1020160070469A KR101697460B1 (ko) | 2009-07-09 | 2016-06-07 | 동함유 재료용 에칭제 조성물 및 동함유 재료의 에칭 방법 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020160070469A KR101697460B1 (ko) | 2009-07-09 | 2016-06-07 | 동함유 재료용 에칭제 조성물 및 동함유 재료의 에칭 방법 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5443863B2 (zh) |
KR (2) | KR20110005207A (zh) |
CN (2) | CN101949013A (zh) |
TW (1) | TWI518205B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103649373A (zh) * | 2011-07-04 | 2014-03-19 | 三菱瓦斯化学株式会社 | 铜或以铜为主要成分的化合物的蚀刻液 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201250059A (en) * | 2011-03-08 | 2012-12-16 | Nagase Chemtex Corp | Etching liquid |
CN102291952B (zh) * | 2011-08-05 | 2013-04-24 | 奥士康精密电路(惠州)有限公司 | 多层pcb板的制备方法 |
KR102058485B1 (ko) * | 2012-03-13 | 2019-12-23 | 가부시키가이샤 아데카 | 에칭액 조성물 및 에칭방법 |
KR101485873B1 (ko) * | 2012-09-28 | 2015-01-26 | 멕크 가부시키가이샤 | 구리의 마이크로 에칭제 및 그 보급액, 및 배선 기판의 제조 방법 |
KR102079658B1 (ko) * | 2013-04-05 | 2020-02-20 | 해성디에스 주식회사 | 구리 함유 금속막 식각액 조성물 및 이를 이용한 식각 방법 |
JP6354084B2 (ja) * | 2013-04-16 | 2018-07-11 | メック株式会社 | エッチング液、補給液、及び配線形成方法 |
CN103215592B (zh) * | 2013-04-27 | 2015-07-08 | 苏州诺菲纳米科技有限公司 | 蚀刻膏、蚀刻膏的应用以及利用蚀刻膏蚀刻纳米银导电材料的方法 |
CN104278273A (zh) * | 2014-06-13 | 2015-01-14 | 叶涛 | 线路板低酸高效型酸性氯化铜蚀刻液 |
KR102204210B1 (ko) * | 2014-06-27 | 2021-01-18 | 동우 화인켐 주식회사 | 금속막의 식각액 조성물 및 이를 이용한 액정표시장치용 어레이 기판의 제조방법 |
JP6333455B1 (ja) * | 2017-08-23 | 2018-05-30 | メック株式会社 | 銅のマイクロエッチング剤および配線基板の製造方法 |
CN107460464B (zh) * | 2017-08-28 | 2019-11-01 | 厦门大学 | 一种含铜材料的表面处理方法 |
CN109862706B (zh) * | 2019-01-24 | 2020-08-14 | 绍兴市微益电器有限公司 | 一种电路板印刷工艺 |
WO2020261995A1 (ja) * | 2019-06-28 | 2020-12-30 | 株式会社Adeka | 組成物及びエッチング方法 |
JP7507041B2 (ja) | 2020-08-25 | 2024-06-27 | 株式会社Adeka | 組成物、エッチング方法、及び回路パターン形成方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001181868A (ja) * | 1999-12-20 | 2001-07-03 | Asahi Denka Kogyo Kk | 銅及び銅合金用のマイクロエッチング剤 |
JP2001181867A (ja) * | 1999-12-20 | 2001-07-03 | Asahi Denka Kogyo Kk | マイクロエッチング剤 |
JP4350364B2 (ja) * | 2002-12-12 | 2009-10-21 | 昭和電工株式会社 | 洗浄剤組成物、半導体ウェーハの洗浄方法および製造方法 |
JP4055595B2 (ja) * | 2003-02-05 | 2008-03-05 | 凸版印刷株式会社 | 金属材料のエッチング液およびエッチング方法 |
JP4018559B2 (ja) * | 2003-02-27 | 2007-12-05 | メック株式会社 | 電子基板の製造方法 |
TWI282377B (en) * | 2003-07-25 | 2007-06-11 | Mec Co Ltd | Etchant, replenishment solution and method for producing copper wiring using the same |
JP2007180172A (ja) * | 2005-12-27 | 2007-07-12 | Mec Kk | 基板の製造方法 |
DE602006009614D1 (de) * | 2006-02-17 | 2009-11-19 | Atotech Deutschland Gmbh | Zusammensetzung und Verfahren zur Behandlung der Oberflächen von Kupferlegierungen, um die Haftfähigkeit zwischen der Metalloberfläche und dem gebundenen polymerischen Material zu verbessern |
-
2009
- 2009-07-09 JP JP2009162717A patent/JP5443863B2/ja active Active
-
2010
- 2010-06-11 TW TW099119136A patent/TWI518205B/zh active
- 2010-06-21 KR KR1020100058478A patent/KR20110005207A/ko active Application Filing
- 2010-07-06 CN CN201010218563XA patent/CN101949013A/zh active Pending
- 2010-07-06 CN CN201510670357.5A patent/CN105386055B/zh active Active
-
2016
- 2016-06-07 KR KR1020160070469A patent/KR101697460B1/ko active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103649373A (zh) * | 2011-07-04 | 2014-03-19 | 三菱瓦斯化学株式会社 | 铜或以铜为主要成分的化合物的蚀刻液 |
Also Published As
Publication number | Publication date |
---|---|
KR101697460B1 (ko) | 2017-01-17 |
CN105386055A (zh) | 2016-03-09 |
KR20160076496A (ko) | 2016-06-30 |
TWI518205B (zh) | 2016-01-21 |
TW201120247A (en) | 2011-06-16 |
CN105386055B (zh) | 2018-07-10 |
JP5443863B2 (ja) | 2014-03-19 |
CN101949013A (zh) | 2011-01-19 |
JP2011017053A (ja) | 2011-01-27 |
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