KR20100109009A - Substrates treating apparatus and method - Google Patents

Abstract

PURPOSE: A device and a method for processing a substrate are provided to increase the adhesion between a substrate and a vacuum chuck by using pressure difference of a vacuum hole of a vacuum chuck and the pressure of an inner space of a housing. CONSTITUTION: A housing(110) includes an inner space(111) to process a substrate(W). A vacuum chuck absorbs the substrate. A sealing cover(140) and a shower head(150) are installed on the upper side of the vacuum chuck. A pipe(310) exhaust gas to the outside. A vacuum pump(320) controls the pressure of the inner space. An exhaust valve(330) controls the gas flowing in the pipe.

Description

Substrate Processing Apparatus and Method {SUBSTRATES TREATING APPARATUS AND METHOD}

The present invention relates to a substrate processing apparatus and method, and more particularly, to a substrate processing apparatus and method for vacuum adsorption of a substrate.

In order to manufacture a semiconductor device, a lithography process using a photoresist is necessarily accompanied. The photoresist is composed of a light-sensitive organic polymer or a mixture of a photosensitive agent and a polymer. After the exposure and dissolution process, a photoresist is formed on the substrate. The photoresist is formed by etching the substrate or the films on the substrate. Transcribe. Such a polymer is called a photoresist, and a process of forming a fine pattern on a substrate using a light source is called a lithography process.

In such a semiconductor manufacturing process, photoresists used as a mask in the ion implantation process or forming various microcircuit patterns such as line or space patterns on a substrate are mainly ashed. It is removed from the substrate through an ashing process.

Conventional ashing process simply uses an electrostatic chuck to fix the substrate using a clamp or electrostatic force.

However, as the line width of the semiconductor substrate becomes finer and the process becomes more delicate, existing substrate chucking devices cannot improve the uniformity of the substrate, resulting in a decrease in productivity due to poor quality. Chucking of a substrate using a vacuum chuck is useful, but there is a difficulty in maintaining a vacuum during the process.

It is an object of the present invention to provide a substrate processing apparatus and method for chucking a substrate using a pressure difference.

It is an object of the present invention to provide a substrate processing apparatus and method capable of increasing the adhesion between the substrate and the vacuum chuck.

SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing apparatus and method capable of adjusting the adhesion between the substrate and the vacuum chuck according to the area of the substrate.

SUMMARY OF THE INVENTION An object of the present invention is to provide an apparatus and method for processing a substrate, the pressure difference being easy to adjust.

It is an object of the present invention to provide a substrate processing apparatus and method capable of improving the production yield and quality of a substrate.

The present invention provides a substrate processing apparatus for vacuum suction of a substrate. The substrate processing apparatus of the present invention comprises a housing having an inner space; A vacuum chuck disposed in the inner space to vacuum the substrate and having a vacuum hole formed on an upper surface thereof; A pipe coupled to the housing and exhausting gas in the inner space to the outside; A vacuum pump installed at a first point of the pipe and controlling a pressure of the internal space; A pipe valve installed in the pipe at a second point between the first point and the housing and opening or closing the pipe or adjusting a flow rate of gas flowing through the pipe; And a vacuum line having one end connected to the vacuum hole and a second end connected to the pipe between the first point and the second point and a first valve opening and closing the first line.

A second line having one end connected to the first line in a section between the vacuum hole and the first valve and the other end connected to the pipe between the housing and the second point; And a second valve provided on the second line to open and close the second line.

In addition, the vacuum line is one end is connected to the first line in the section between the vacuum hole and the first valve, the other end is connected to the gas supply unit for supplying gas, the first supply of gas to the first line 3 lines; And a third valve provided on the third line, the third valve opening and closing the third line.

According to another embodiment of the present invention, a substrate processing apparatus includes a housing having an inner space; First and second vacuum chucks spaced apart from each other in the inner space and having vacuum holes for adsorbing the substrate on the upper surface thereof, respectively; A pipe coupled to the housing and exhausting gas in the inner space to the outside; A vacuum pump installed at a first point of the pipe and controlling a pressure of the internal space; One end of the pipe valve, which is installed in the pipe at the second point between the first point and the housing, opens and closes the pipe or controls the flow rate of the gas flowing through the pipe, is connected to the vacuum hole of the first vacuum chuck and the other end thereof is A first line connected with the pipe between the first point and the second point; A branch line branched from the first line and connected to the vacuum hole of the second vacuum chuck; A first valve provided on the first line in a section connecting the branch point where the branch line branches from the first line and the pipe, and opening and closing the first line; An auxiliary valve provided on the first line connecting the branch point and the vacuum hole of the first vacuum chuck to open and close the first line; It is provided on the branch line, and includes a branch valve for opening and closing the branch line.

The substrate processing apparatus has one end connected to the first line in a section connecting the branch point and the first valve, and a second line connected to the pipe at the other end connecting the housing and the second point. ; And a second valve provided on the second line to open and close the second line.

In addition, the substrate processing apparatus is connected to the first line at one end in a section connecting the branch point and the first valve, and the other end is connected to a gas supply unit supplying gas to supply gas to the first line. A third line; And a third valve provided on the third line to open and close the third line.

The present invention also provides a substrate processing method for vacuum adsorption of a substrate. The substrate processing method of the present invention comprises a housing having an inner space; A vacuum chuck disposed in the inner space to vacuum the substrate and having a vacuum hole formed on an upper surface thereof; A pipe coupled to the housing and exhausting gas in the inner space to the outside; A vacuum pump installed at a first point of the pipe and controlling a pressure of the internal space; A pipe valve installed in the pipe at a second point between the first point and the housing and controlling the flow rate of the gas flowing in or out of the pipe according to the pressure of the internal space; And a first valve having one end connected to the vacuum hole and the other end connected to the pipe between the first point and the second point and a first valve opening and closing the first line. In the processing method, when the substrate is brought into the internal space, the pressure between the first point and the second point is maintained at a first pressure, and the pipe valve is partially opened to make the pressure of the internal space higher than the first pressure. Maintaining at a high second pressure; And opening the first valve to maintain the pressure in the vacuum hole at a third pressure smaller than the second pressure, so as to vacuum the substrate onto the vacuum chuck.

The substrate processing method further includes the step of processing the substrate by supplying a process gas to the internal space when the substrate is vacuum-adsorbed to the vacuum chuck.

The second vacuum line may include a second line, one end of which is connected to the first line in a section between the vacuum hole and the first valve, and the other end of which is connected to the pipe between the housing and the second point; And a second valve provided on the second line to open and close the second line, wherein the substrate processing method includes opening the second valve to open the second pressure and the third pressure after the substrate processing is completed. And unloading the substrate from the vacuum chuck by maintaining a second pressure difference within a preset range.

In addition, the vacuum line is one end is connected to the first line in the section between the vacuum hole and the first valve, the other end is connected to the gas supply unit for supplying gas, the first supply of gas to the first line 3 lines; And a third valve provided on the third line and opening and closing the third line, wherein the unloading of the substrate may include opening the third valve and returning to the first line. And supplying a gas to maintain a difference between the third pressure and the second pressure within a preset range.

Unloading the substrate closes the pipe valve.

The third pressure is greater than or equal to the first pressure.

In addition, the present invention provides a substrate processing apparatus according to another embodiment. A substrate processing apparatus according to another embodiment of the present invention includes a housing having an inner space; A vacuum chuck disposed in the inner space to vacuum-absorb a substrate, wherein first vacuum holes are formed in a first region of the upper surface, and second vacuum holes are formed in a second region different from the first region of the upper surface; A pipe coupled to the housing and exhausting gas in the inner space to the outside; A vacuum pump installed at a first point of the pipe and controlling a pressure of the internal space; A pipe valve installed in the pipe at a second point between the first point and the housing and opening or closing the pipe or adjusting a flow rate of gas flowing through the pipe; And a vacuum line having one end connected to the first vacuum holes and the other end connected to the pipe between the first point and the second point and a first valve opening and closing the first line. do. The first region is a center region and the second region is an edge region.

A second line having one end connected to the first line in a section between the first vacuum hole and the first valve and the other end connected to the pipe between the housing and the second point; A third line, one end of which is connected to the first line in a section between the first vacuum hole and the first valve, and the other end of which is connected to a first gas supply unit supplying gas to supply the gas to the first line ; A second valve provided on the second line to open and close the second line; And a third valve provided on the third line, the third valve opening and closing the third line.

According to an embodiment of the present invention, the vacuum line further includes a fourth line, one end of which is connected to the second vacuum hole and the other end of which is connected to a pressure regulating pump for adjusting the pressure of the second vacuum hole. A fourth line having one end connected to the second vacuum hole and the other end connected to the first line between the first vacuum hole and the first valve; It is provided in the fourth line, and further comprises a second pressure controller for adjusting the pressure of the fourth line.

According to another embodiment of the present invention, the vacuum line has one end connected to the second vacuum hole, the other end is connected to the pipe between the first point and the second point and the fourth line and the fourth line It further comprises a fourth valve for opening and closing the. A fifth line having one end connected to the fourth line in a section between the second vacuum hole and the fourth valve and the other end connected to the pipe between the housing and the second point; One end is connected to the fourth line in the section between the second vacuum hole and the fourth valve, the other end is connected to the second gas supply unit for supplying gas, the sixth line for supplying gas to the fourth line ; A fifth valve provided on the fifth line to open and close the fifth line; And a sixth valve provided on the sixth line and opening and closing the sixth line.

According to the present invention, the substrate can be fixed to the vacuum chuck by using the pressure difference between the internal space of the housing and the pressure difference between the vacuum holes of the vacuum chuck.

Further, according to the present invention, it is easy to adjust the pressure difference between the pressure of the inner space of the housing and the vacuum hole of the vacuum chuck.

Moreover, according to this invention, the adhesiveness of a board | substrate and a vacuum chuck can be increased.

Moreover, according to this invention, the adhesiveness of a board | substrate and a vacuum chuck can be adjusted according to the area | region of a board | substrate.

Moreover, according to this invention, the production yield of a board | substrate and the uniformity of a board | substrate surface can be improved.

Hereinafter, exemplary embodiments of the present invention will be described in more detail with reference to FIGS. 1 to 6. Embodiments of the invention may be modified in various forms, the scope of the invention should not be construed as limited to the following embodiments. This example is provided to more completely explain the present invention to those skilled in the art. Therefore, the shape of the elements in the drawings are exaggerated to emphasize a more clear description.

1 is a view showing a substrate processing apparatus according to an embodiment of the present invention, Figure 2 is a view showing a vacuum chuck of the present invention.

1 and 2, the substrate processing apparatus 1 includes a processing part 100, a plasma generating part 200, an exhausting part 300, and a vacuum line. 400. The process processor 100 performs a substrate treatment process such as an ashing process. The plasma generation unit 200 generates plasma required for the substrate process and supplies the plasma to the process processing unit 100. The exhaust unit 300 discharges gas and reaction by-products inside the process processor 100 to the outside.

In detail, the process processor 100 includes a housing 110, a vacuum chuck 120, a sealing cover 140, and a shower head 150.

The housing 110 has an inner space 111 in which an ashing process is performed. The side wall of the housing 110 is provided with an opening 112 through which the substrate W enters and exits, and the opening 112 is opened and closed by an opening and closing member such as a slit door (not shown). An exhaust hole (not shown) is formed in the bottom surface of the housing 110 through which the gas in the internal space 111 is exhausted through a pipe 310 to be described later.

The vacuum chuck 120 is disposed in the inner space 1111 of the housing 110 and vacuum-absorbs the substrate W. The vacuum chuck 120 has a disc shape, and vacuum holes 122 are formed on the upper surface of the vacuum chuck 120. The vacuum holes 122 are connected to each other along a hole formed in the vacuum chuck 120. The vacuum holes 122 are connected to the first line 410 to be described later to suck air in the space between the upper surface of the vacuum chuck 120 and the lower surface of the substrate (W). In addition, the vacuum chuck 120 may include at least one heater that heats the substrate W mounted at a process to a predetermined process temperature. In addition, a lift pin may be provided to lift and unload the substrate W to and from the vacuum chuck 120 by elevating along the groove penetrating the vacuum chuck 120 up and down. A support shaft 123 supporting the vacuum chuck 120 is installed at the lower end of the vacuum chuck 120.

An airtight cover 140 and a shower head 150 are installed at an upper portion of the vacuum chuck 120. The sealing cover 140 is provided at an upper portion of the housing 110 and is coupled to the housing 110 to seal the inner space 111. The airtight cover 140 is coupled to the plasma generating unit 200, and inlets through which the plasma from the plasma generating unit 200 flows are formed. In the interior of the sealing cover 140, an induction space GS is provided to provide the shower head 150 with the plasma introduced through the inlets. In some embodiments, the induction space GS is formed in an inverted funnel shape.

The shower head 150 is installed between the airtight cover 140 and the vacuum chuck 120, and the substrate W mounted on the vacuum chuck 120 for plasma introduced into the induction space GS of the airtight cover 140. Spray into. Specifically, the shower head 150 is installed on the upper surface of the housing 110 adjacent to the induction space GS of the hermetic cover 140. The shower head 150 is formed with a plurality of holes for spraying the plasma.

 Plasma generating unit 200 is installed on the top of the closed cover 140, and generates a plasma to provide a plasma to the induction space (GS) in the closed cover 140. The plasma generation unit 200 includes a magnetron 211, a waveguide 212, a plasma source unit 213, and a gas supply pipe 214.

The magnetron 211 generates microwaves for plasma generation, and the waveguide 212 guides the microwaves generated from the connected magnetrons 211 to the plasma source unit 213. The gas supply pipe 214 is connected to the plasma source unit 213, and supplies the reaction gas required for plasma generation to the connected plasma source unit 213.

In the plasma source portion 213, plasma is generated by the reaction gas from the gas supply pipe 214 and the microwaves from the magnetron 211.

Plasma source portion 213 is coupled to the sealing cover 140, the plasma generated in the plasma source portion 213 is provided in the induction space GS of the sealing cover 140, the vacuum through the shower head 150 Spray toward the substrate (W) seated on the chuck 120.

The exhaust part 300 is installed under the process processing part 100. The exhaust unit 300 controls the pressure of the internal space 111 of the housing 110 and exhausts the internal gas. The exhaust part 300 includes a pipe 310 for exhausting the gas in the internal space 111 of the housing 110 to the outside, and a vacuum pump 320 for adjusting the pressure in the internal space 111 of the housing 110. do.

The pipe 310 is installed below the housing 110, and a passage through which gas and reaction by-products in the inner space 111 of the housing 110 are exhausted is formed. The passage of the pipe 310 is connected to the exhaust hole and communicates with the inner space 111 of the housing 110.

The vacuum pump 320 is installed at the first point L1 of the pipe 310, and forcibly sucks gas in the internal space 111 of the housing 110 through the pipe 310 to internally space the housing 110. Adjust the pressure of (111). In addition, the vacuum pump 320 sucks the reaction by-products in the internal space 111 of the housing 110 and exhausts them to the outside. When the vacuum pump 320 is driven, the pipe 310 maintains the first pressure P1. The first point L1 is a point sufficiently separated from the housing 110.

The pipe valve 330 is installed at a second point L2 between the first point L1 where the vacuum pump 320 is installed and the housing 110. The pipe valve 330 opens and closes the pipe 310 or adjusts the flow rate of the gas flowing through the pipe 310. When the plasma is supplied to the inner space 111 of the housing 110 and the process for the substrate W is performed, the pipe valve 330 partially opens the pipe 310. Gas and reaction by-products in the internal space 111 are exhausted through the passage of the open pipe 310, and the internal space 111 of the housing 110 maintains the second pressure P2. The second pressure P2 has a value greater than the first pressure P1. According to the embodiment, the pipe valve 330 may be a bellows seal valve that is contracted and relaxed in the longitudinal direction in accordance with the pressure of the air injected therein.

The vacuum line 400 is connected to the vacuum hole 122, and adjusts the pressure of the vacuum hole 122. In detail, the vacuum line 400 includes a first line 410 connecting the vacuum hole 122 and the pipe 310, a second line 420 connecting the first line 410 and the pipe 310, and a second line 420. First to third valves 411, 421, and 431 provided on the third line 430 for supplying gas to the first line 410 and the first to third lines 410, 420, 430, respectively. It includes.

In detail, one end of the first line 410 is connected to the vacuum hole 122 of the vacuum chuck 120, and the other end thereof is connected to the pipe 310 between the first point L1 and the second point L2. . The first valve 411 is installed on the first line 410 to open and close the first line 410. The pressure of the vacuum hole 122 is adjusted by opening and closing the first valve 411. When the second and third valves 421 and 431 are closed and the first valve 411 is open, the vacuum hole 122 maintains the third pressure P3. The third pressure P3 is smaller than the second pressure P2 and has a value equal to or greater than the first pressure P1.

One end of the second line 320 is connected to the first line 410 in the section between the vacuum hole 122 and the first valve 411, and the other end is connected between the housing 110 and the second point L2. It is connected to the pipe (310). A second valve 421 is installed on the second line 420 to open and close the second line 420. The pressure of the first line 410 and the vacuum hole 122 is controlled by opening and closing the second valve 421. When the first and third valves 411 and 431 are closed and the second valve 421 is opened, the inner space 111 of the housing 110 and the first line 410 communicate with each other to form a third pressure P3. The difference in the second pressure P2 decreases gradually.

One end of the third line 430 is connected to the first line 410 in a section between the vacuum hole 122 and the first valve 411, and the other end is connected to the gas supply unit 435. The third line 430 receives gas from the gas supply unit 435 and provides the gas to the first line 410. A third valve 431 is installed on the third line 430 to open and close the third line 430. The gas supplier 435 stores the gas and supplies the stored gas to the third line 430. Preferably, the gas supplied is an inert gas. Between the gas supply unit 435 and the third valve 430, a flow control valve 434 for adjusting the flow rate of the gas supplied from the gas supply unit 435, a filter 433 for filtering the supplied gas, A pressure regulator 432 may be provided to regulate the pressure. When the first and second valves 411 and 421 are closed and the third valve 431 is opened, gas is supplied to the first line 410 to raise the third pressure P3. Therefore, the difference between the third pressure P3 and the second pressure P2 gradually decreases.

3 is a view showing another embodiment of the present invention.

Referring to FIG. 3, the internal space 111 of the housing 110 is divided into a first space FS and a second space SS, and the ashing process is performed on the first and second spaces FS and SS, respectively. Provide space to become. Openings 112a and 112b for entering and exiting the substrate W are formed in sidewalls of the first space FS and the second space SS, respectively. Each opening 112a, 112b is opened and closed by an opening and closing member such as a slit door. The first vacuum chuck 120a is disposed in the first space FS, and the second vacuum chuck 120b is disposed in the second space 120b, and the first and second vacuum chucks 120a and 120b are respectively substrates. Vacuum (W). The first and second vacuum chucks 120a and 120b have the same structure as the vacuum chuck 120 of FIG. 1.

An airtight cover 140 and first and second shower heads 150a and 150b are installed on the first and second vacuum chucks 120a and 120b. The sealing cover 140 corresponds to the first and second spaces FS and SS one to one, and is provided at the upper portion of the housing 110, and is coupled to the housing 110 to seal the first and second spaces FS and SS. Let's do it. The airtight cover 140 includes a first cover part 141 provided at an upper portion of the first space FS and a second cover part 142 provided at an upper portion of the second space SS. The first and second cover parts 141 and 142 have the same structure as that of the airtight cover 140 of FIG. 1, respectively.

A first shower head 150a is installed between the first cover part 141 and the first vacuum chuck 120a, and a second shower head (between the second cover 142 and the second vacuum chuck 120b). 150b) is installed. The first and second shower heads 150a and 150b are formed with a plurality of holes for injecting plasma into the substrate W seated on the first and second vacuum chucks 120a and 120b, respectively.

The first plasma generating unit 210 is installed on the upper part of the first cover part 141, and the second plasma generating unit 220 is installed on the upper part of the second cover part 142. The first and second plasma generating units 210 and 220 generate plasma and provide plasma to the guide space GS1 of the first cover part 141 or the guide space GS2 of the second cover part 142. The first and second plasma generating units 210 and 220 have the same structure as that of the plasma generating unit 200 of FIG. 1.

The exhaust part 300 is installed under the process processing part 100. The exhaust unit 300 controls the pressure of the internal space 111 of the housing 110 and exhausts the internal gas. The exhaust part 300 includes a pipe 310 for exhausting the gas in the internal space 111 of the housing 110 to the outside, and a vacuum pump 320 for adjusting the pressure in the internal space 111 of the housing 110. do.

Since the pipe 310, the vacuum pump 320, and the pipe valve 330 are provided in the same structure as in FIG. 1, detailed description thereof will be omitted.

The vacuum line 400 is connected to the vacuum hole 122, and adjusts the pressure of the vacuum hole 122. Specifically, the vacuum line 400 is branched from the first line 410 and the first line 410 connecting the vacuum hole 122a of the first vacuum chuck 120a and the pipe 310 to the second vacuum chuck ( Branch line 413 connected to the vacuum hole 122b of 120b, the second line 420 connecting the first line 410 and the pipe, and the third line supplying gas to the first line 410 ( 430, and each of the lines includes valves.

In detail, one end of the first line 410 is connected to the vacuum hole 122a of the first vacuum chuck 120a and the other end thereof is connected to the pipe 310 between the first point L1 and the second point L2. Connected. The first valve 411 and the auxiliary valve 412 for opening and closing the first line 410 are installed on the first line 410. The auxiliary valve 412 is installed between the branch point DP where the branch line 413 branches from the first line 410 and the vacuum hole 122a of the first vacuum chuck 120a, and the first valve 411. ) Is installed between the branch point (DP) and the pipe (310). The pressure of the vacuum hole 122a of the first vacuum chuck 120a is adjusted by opening and closing the first valve 411 and the auxiliary valve 412. The auxiliary valve 412 blocks the suction of the vacuum hole 122a of the first vacuum chuck 120a when the first vacuum chuck 120a is not provided to the process. When the second and third valves 421 and 431 are closed, and the first valve 411 and the auxiliary valve 412 are opened, the vacuum hole 122a of the first vacuum chuck 120a is opened at the third pressure P3. Keep it. The third pressure P3 is smaller than the second pressure P2 and has a value equal to or greater than the first pressure P1.

The branch line 413 branches from the first line 410 and is connected to the vacuum hole 122b of the second vacuum chuck 120b. A branch valve 414 is provided on the branch line 413 to open and close the branch line 413. The branch valve 414 blocks the suction of the vacuum hole 122b of the second vacuum chuck 120b when the second vacuum chuck 120b is not provided to the process. As such, by blocking the auxiliary valve 412 or the branch valve 414, if either one of the first vacuum chuck (120a) or the second vacuum chuck (120b) is not provided to the process, optionally any one suction hole By blocking (122a, 122b), the process proceeds efficiently. The pressure of the vacuum hole 122b of the second vacuum chuck 120b is controlled by opening and closing the first valve 411 and the branch valve 414. When the second and third valves 421 and 431 are closed, and the first valve 411 and the branch valve 414 are open, the vacuum hole 122b of the second vacuum chuck 120b is opened to the third pressure P3. Keep it. The third pressure P3 is smaller than the second pressure P2 and has a value equal to or greater than the first pressure P1.

One end of the second line 420 is connected to the first line 410 in a section connecting the branch point DP and the first valve 410, and the other end is connected between the housing 110 and the second point L2. Is connected to the pipe (310). A second valve 421 is installed on the second line 420 to open and close the second line 420. Pressure of the first line 410 and the vacuum holes 122a and 122b is controlled by opening and closing the second valve 421. When the first and third valves 411 and 431 are closed and the second valve 421, the auxiliary valve 412, and the branch valve 414 are opened, the inner space 111 and the first line of the housing 110 are opened. 410 is in communication with each other, the difference between the third pressure P3 and the second pressure P2 gradually decreases.

One end of the third line 430 is connected to the first line 410 in a section connecting the branch point DP and the first valve 411, and the other end is connected to the gas supply part 435. The third line 430 receives gas from the gas supply unit 435 and provides the gas to the first line 410. A third valve 431 is installed on the third line 430 to open and close the third line 430. The gas supplier 435 stores the gas and supplies the stored gas to the third line 430. Between the gas supply unit 435 and the third valve 431, a flow rate control valve 434 for adjusting the flow rate of the gas supplied from the gas supply unit 435, a filter 433 for filtering the supplied gas, A pressure regulator 432 may be provided to regulate the pressure. When the first and second valves 411 and 421 are closed, and the third valve 431, the auxiliary valve 412, and the branch valve 414 are opened, gas is supplied to the first line 410 to generate a third pressure. P3 rises. Therefore, the difference between the third pressure P3 and the second pressure P2 gradually decreases.

The substrate processing method using the substrate processing apparatus which has the structure as mentioned above is as follows.

The substrate treating method 1 maintains the pressure in the internal space of the housing 110 at a second pressure P2, vacuum-adsorbs the substrate W to the vacuum chuck 120, and processes the substrate W. Processing, and unloading the substrate W on which the process is completed. Hereinafter, the process in which substrate processing occurs will be described in detail.

4A to 4C are views showing the substrate processing method of the present invention.

Referring to FIG. 4A, first, when a substrate W is loaded into an inner space 111 of the housing 110 by a transfer unit (not shown) and moved to an upper portion of the vacuum chuck 120, a lift pin (not shown) The substrate W is placed on the upper surface of the vacuum chuck 120 by lifting and lowering. In addition, the first pressure P1 is maintained between the first point L1 and the second point L2 of the pipe 310 by driving the vacuum pump 320. At this time, the pipe valve 330 is partially opened, and the pressure of the internal space 111 of the housing 110 is partially opened by the partial opening of the pipe valve 330, and the second pressure P2 is greater than the first pressure P1. Keep it.

When the first valve 411 is opened to allow the pipe 310 and the first line 410 between the first point L1 and the second point L2 to pass through, the first point L1 and the second point ( The first pressure P1 between L2 is transmitted to the first line 410 so that the vacuum hole 122 of the vacuum chuck 120 maintains the third pressure P3. The third pressure P3 is greater than or equal to the first pressure P1 and has a value smaller than the second pressure P2. For this reason, since the 2nd pressure P2 which acts on the upper surface is larger than the 3rd pressure P3 which acts on the lower surface of the board | substrate W, the board | substrate W is hold | maintained by the vacuum chuck 120.

Referring to FIG. 4B, when the substrate W is adsorbed and held on the vacuum chuck 120, plasma is generated in the plasma generating unit 200 and supplied to the guide space GS of the airtight cover 140. The supplied plasma is sprayed onto the substrate W through a hole formed in the shower head 150 to process the substrate W. Gas and reaction by-products generated in the process is forcibly sucked and discharged to the outside through the pipe 310. The pipe valve 330 is partially opened while the process is in progress, and the gas and the reaction by-product are discharged to the outside through the passage of the partially opened pipe 310.

Referring to FIG. 4C, when the processing of the substrate W is completed, the substrate W is unloaded from the vacuum chuck 120. Unloading of the substrate 120 is performed by maintaining the difference between the third pressure P3 and the second pressure P2 within a preset range. The preset range includes a third pressure P3 and a second pressure P2 that can prevent damage to the substrate W when the lift pin is lifted to lift the substrate W placed on the vacuum chuck 120. ) Means the difference. This includes keeping the third pressure P3 in equilibrium with the second pressure P2. The third pressure P3 is smaller than the second pressure P2 within a range in which damage of the substrate W is not caused by the lift pins. In addition, the third pressure P3 is greater than the second pressure P in a range in which a popping phenomenon from which the substrate W bounces off the vacuum chuck 120 does not occur.

According to the exemplary embodiment, the second valve 421 is opened to maintain the difference between the third pressure P3 and the second pressure P2 within a preset range so that the inner space 111 and the first line of the housing 110 are opened. 410 is made to pass. When the second pressure P2 greater than the third pressure P3 is transmitted to the first line 410 through the second line 420, the pressure difference between the third pressure P3 and the second pressure P2 decreases. Is maintained within the preset range.

In another embodiment, maintaining the difference between the third pressure P3 and the second pressure P2 within a preset range is achieved by opening the third valve 431 to supply gas to the first line 410. Preferably, the gas supplied is an inert gas. When the gas stored in the gas supply unit 435 is supplied to the first line 410 through the third line 430, the third pressure P3 is increased so that the difference from the second pressure P2 is within a preset range. maintain. Since the supply of the gas can adjust the flow rate of the gas supplied by the pressure regulator 432, it is possible to efficiently maintain the difference between the third pressure P3 and the second pressure P2 within a predetermined range within a short time. .

In another embodiment, maintaining the difference between the third pressure P3 and the second pressure P2 within a preset range is achieved by simultaneously opening the second valve 421 and the third valve 431. Opening of the second valve 421 allows the internal space 111 of the housing 110 and the first line 410 to communicate with each other so that the pressure difference between the third pressure P3 and the second pressure P2 decreases. By opening the valve 431, the third pressure P3 is increased by the gas supplied to the first line 410, thereby reducing the pressure difference from the second pressure P2.

When the difference between the third pressure P3 and the second pressure P2 is maintained within the preset range, the lift pin is raised to lift the substrate W to the upper portion of the vacuum chuck 120. The substrate W supported by the lift pins is transferred to another hearing treatment unit (not shown) by the transfer unit.

Hereinafter, a substrate processing apparatus according to another embodiment of the present invention will be described.

5A is a cross-sectional view of a vacuum chuck according to another embodiment of the present invention, and FIG. 5B is a plan view of a vacuum chuck according to another embodiment of the present invention.

5A and 5B, the vacuum chuck 120 is disposed in the inner space 111 of the housing 110 and vacuum-adsorbs the substrate W. The vacuum chuck 120 has a disc shape, and vacuum holes 122 are formed on the upper surface of the vacuum chuck 120. The vacuum holes 122 include first vacuum holes 122a formed in the first region of the upper surface of the vacuum chuck 120 and second vacuum holes 122b formed in the second region of the upper surface of the vacuum chuck 122. According to an embodiment, the first region is the center region of the upper surface of the vacuum chuck 122, and the second region is the edge region of the upper surface of the vacuum chuck 122. The first vacuum holes 122a are connected to each other along the holes formed in the vacuum chuck 122, and the second vacuum holes 122b are formed inside the vacuum chuck 122. The second vacuum holes 122b are connected to each other along the hole. The first vacuum holes 122a and the second vacuum holes 122b do not communicate with each other. The first vacuum holes 122a are connected to the first line 410 to vacuum-adsorb an area of the substrate W corresponding to the first area. In addition, the second vacuum holes 122b are connected to the fourth line 440 to be described later to vacuum-absorb the region of the substrate W corresponding to the second region. In example embodiments, the first vacuum holes 122a may vacuum-adsorb a central region of the substrate W, and the second vacuum holes 122b may vacuum-adsorb an edge region of the substrate W. FIG.

6 is a schematic view of a portion of the substrate processing apparatus according to FIGS. 5A and 5B.

5A to 6, the exhaust unit 300 is installed under the process processing unit 100. The exhaust unit 300 controls the pressure of the internal space 111 of the housing 110 and exhausts the internal gas. The exhaust unit 300 is a pipe 310 for exhausting the gas in the internal space 111 of the housing 110 to the outside, a vacuum pump 320 for adjusting the pressure of the internal space 111 of the housing 110, piping It includes a pipe valve 330 for opening and closing the 310 or adjust the flow rate of the gas flowing through the pipe (310). Since the pipe 310, the vacuum pump 320, and the pipe valve 330 have the same configuration as described in FIG. 1, detailed descriptions thereof will be omitted.

The vacuum line 400 is connected to the vacuum holes 122 and adjusts the pressure of the vacuum hole 122. In detail, the vacuum line 400 includes a first line 410 connecting the first vacuum hole 122a and the pipe 310, and a second line 420 connecting the first line 410 and the pipe 310. , The third line 430 for supplying gas to the first line 410, the fourth line 440 for connecting the second vacuum hole 122b and the first line 410, and the first to third lines ( The first pressure is provided on the 410, 420, 430, respectively, the first to third valves (411, 421, 431) for opening and closing the first to third lines (410, 420, 430), the first pressure to adjust the pressure of the first line (410) The controller 417 includes a second pressure controller 448 provided in the fourth line 440 to adjust the pressure of the fourth line 440. Since the first to third lines and the first to third valves have the same configuration as those described in FIG. 1, detailed descriptions thereof will be omitted.

The first pressure controller 417 is provided in the first line 410 in the section between the first vacuum hole 122a and the first valve 411, and adjusts the pressure of the first line 410. The vacuum pressure of the first vacuum holes 122a is controlled by the first pressure controller 417. Therefore, the first vacuum holes 122a may be pressure-controlled by four steps. First, the first vacuum holes 122a maintain the third pressure P3 by opening the first valve 411. In addition, the opening of the second valve 421 causes the internal space 111 of the housing 110 to communicate with the first line 410 so that the difference between the third pressure P3 and the second pressure P2 gradually increases. Decreases. In addition, when the third valve 431 is opened, gas is supplied to the first line 410 so that the difference between the third pressure P3 and the second pressure P2 gradually decreases. Finally, the pressure of the first vacuum hole 122a is adjusted by the first pressure controller 417.

One end of the fourth line 440 is connected to the second vacuum hole 122b, and the other end thereof is connected to the first line 410 between the first vacuum hole 122a and the first valve 411. A second pressure controller 448 is provided on the fourth line 440 to adjust the pressure of the fourth line 440. By the second pressure controller 448, the second vacuum hole 122b may adjust the vacuum pressure independently of the first vacuum hole 122a. As a result, since the vacuum adsorption force may vary according to the area of the substrate W, the adhesion between the substrate W and the vacuum chuck 120 may be increased. The second vacuum holes 122b may be pressure-controlled by four steps for the same reason as the first vacuum holes 122a.

7 is a schematic view of a portion of a substrate processing apparatus according to another embodiment of the present invention.

5A, 5B, and 7, one end of the fourth line 440 is connected to the second vacuum hole 122b, and the other end thereof is connected to the pressure control pump 442. The pressure regulating pump 442 adjusts the pressure of the second vacuum hole 122b. The pressure control pump 442 allows the second vacuum hole 122b to adjust the vacuum pressure independently of the first vacuum hole 122a. As a result, since the vacuum adsorption force may vary according to the region of the substrate W, the adhesion between the substrate W and the vacuum chuck 120 may be increased.

8 is a schematic view of a portion of a substrate processing apparatus according to another embodiment of the present invention.

5A, 5B, and 8, the vacuum line 400 is connected to the vacuum holes 122 and adjusts the pressure of the vacuum holes 122. The vacuum line 400 includes a first line 410 connecting the first vacuum holes 122a and the pipe 310, a second line 420 connecting the first line 410 and the pipe 310, Third line 430 for supplying gas to the first line 410, fourth line for connecting the second vacuum hole and the pipe 310, fifth line for connecting the fourth line 440 and the pipe 310 Line 450 and sixth line 460 for supplying gas to fourth line 440.

One end of the first line 410 is connected to the first vacuum hole 122a of the vacuum chuck 120, and the other end thereof is connected to the pipe 310 between the first point L1 and the second point L2. The first valve 411 is installed on the first line 410 to open and close the first line 410. The pressure of the first vacuum hole 122a is adjusted by opening and closing the first valve 411.

One end of the second line 320 is connected to the first line 410 in the section between the first vacuum hole 122a and the first valve 411, and the other end thereof is the housing 110 and the second point L2. It is connected with the pipe 310 between. A second valve 421 is installed on the second line 420 to open and close the second line 420. The pressure of the first line 410 and the first vacuum hole 122a is adjusted by opening and closing the second valve 421.

One end of the third line 430 is connected to the first line 410 in the section between the first vacuum hole 122a and the first valve 411, and the other end thereof is connected to the first gas supply part 435. The third line 430 receives gas from the first gas supply unit 435 and provides the gas to the first line 410 to adjust the pressure of the first vacuum hole 122a. A third valve 431 is installed on the third line 430 to open and close the third line 430. The first gas supply unit 435 stores the gas and supplies the stored gas to the third line 430. Preferably, the gas supplied is an inert gas. Between the first gas supply unit 435 and the third valve 430, a flow rate control valve 434 for adjusting the flow rate of the gas supplied from the first gas supply unit 435, a filter 433 for filtering the supplied gas, A pressure regulator 432 may be provided to adjust the pressure of the gas to be supplied.

One end of the fourth line 440 is connected to the second vacuum hole 122b of the vacuum chuck 120, and the other end thereof is connected to the pipe 310 between the first point L1 and the second point L2. The fourth valve 441 is installed on the fourth line 440 to open and close the fourth line 440. The pressure of the second vacuum hole 122b is adjusted by opening and closing the fourth valve 441.

One end of the fifth line 350 is connected to the fourth line 440 in a section between the second vacuum hole 122b and the fourth valve 441, and the other end thereof is the housing 110 and the second point L2. It is connected with the pipe 310 between. A fifth valve 451 is installed on the fifth line 450 to open and close the fifth line 450. The pressure of the fifth line 450 and the second vacuum hole 122b is adjusted by opening and closing the fifth valve 421.

One end of the sixth line 460 is connected to the sixth line 460 in the section between the second vacuum hole 122b and the sixth valve 461, and the other end thereof is connected to the second gas supply unit 465. The sixth line 460 receives gas from the second gas supply unit 465 and provides the gas to the sixth line 460 to adjust the pressure of the second vacuum hole 122b. A sixth valve 461 is installed on the sixth line 460 to open and close the sixth line 460. The second gas supplier 465 stores the gas and supplies the stored gas to the sixth line 460. Preferably, the gas supplied is an inert gas. Between the second gas supply unit 465 and the sixth valve 460, a flow rate control valve 464 for adjusting the flow rate of the gas supplied from the second gas supply unit 465, a filter 463 for filtering the supplied gas, A pressure regulator 462 may be provided to regulate the pressure of the gas to be supplied.

The foregoing detailed description illustrates the present invention. In addition, the above-mentioned contents show preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications may be made within the scope of the concept of the invention disclosed in the present specification, the scope equivalent to the disclosures described above, and / or the skill or knowledge in the art. The embodiment described is to describe the best state for implementing the technical idea of the present invention, various modifications required in the specific application field and use of the present invention is possible. Thus, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to include other embodiments.

1 is a schematic view showing a substrate processing apparatus according to an embodiment of the present invention.

2 is a view showing a vacuum chuck according to an embodiment of the present invention.

3 is a schematic view showing a substrate processing apparatus according to another embodiment of the present invention.

4A to 4C are views showing the substrate processing method of the present invention.

5A is a cross-sectional view of a vacuum chuck in accordance with another embodiment of the present invention.

5B is a plan view of a vacuum chuck according to another embodiment of the present invention.

6 is a schematic view of a portion of a substrate processing apparatus according to another embodiment of the present invention.

7 is a schematic view of a portion of a substrate processing apparatus according to another embodiment of the present invention.

8 is a schematic view of a portion of a substrate processing apparatus according to another embodiment of the present invention.

Claims (19)

A housing having an inner space; A vacuum chuck disposed in the inner space to vacuum the substrate and having a vacuum hole formed on an upper surface thereof; A pipe coupled to the housing and exhausting gas in the inner space to the outside; A vacuum pump installed at a first point of the pipe and controlling a pressure of the internal space; A pipe valve installed in the pipe at a second point between the first point and the housing and opening or closing the pipe or adjusting a flow rate of gas flowing through the pipe; And And a vacuum line having one end connected to the vacuum hole and the other end connected to the pipe between the first point and the second point and a first valve opening and closing the first line. Substrate processing apparatus. The method of claim 1, The vacuum line is A second line having one end connected to the first line in a section between the vacuum hole and the first valve and the other end connected to the pipe between the housing and the second point; And And a second valve provided on the second line, the second valve opening and closing the second line. The method according to claim 1 or 2, The vacuum line is A third line, one end of which is connected to the first line in a section between the vacuum hole and the first valve, and the other end of which is connected to a gas supply unit supplying gas to supply gas to the first line; And And a third valve disposed on the third line, the third valve opening and closing the third line. A housing having an inner space; First and second vacuum chucks disposed in the inner space to be spaced apart from each other and having vacuum holes for adsorbing the substrate on the upper surface thereof, respectively; A pipe coupled to the housing and exhausting gas in the inner space to the outside; A vacuum pump installed at a first point of the pipe and controlling a pressure of the internal space; Piping valve is installed in the pipe at the second point between the first point and the housing, opening and closing the pipe or adjusting the flow rate of the gas flowing through the pipe A first line having one end connected to the vacuum hole of the first vacuum chuck and the other end connected to the pipe between the first point and the second point; A branch line branched from the first line and connected to the vacuum hole of the second vacuum chuck; A first valve provided on the first line in a section connecting the branch point where the branch line branches from the first line and the pipe, and opening and closing the first line; An auxiliary valve provided on the first line connecting the branch point and the vacuum hole of the first vacuum chuck to open and close the first line; And a branch valve provided on the branch line to open and close the branch line. The method of claim 4, wherein A second line having one end connected to the first line in a section connecting the branch point and the first valve and the other end connected to the pipe at a section connecting the housing and the second point; And And a second valve provided on the second line, the second valve opening and closing the second line. The method according to claim 4 or 5, A third line having one end connected to the first line in a section connecting the branch point and the first valve and the other end connected to a gas supply unit supplying gas, the third line supplying gas to the first line; And And a third valve provided on the third line, the third valve opening and closing the third line. A housing having an inner space; A vacuum chuck disposed in the inner space to vacuum the substrate and having a vacuum hole formed on an upper surface thereof; A pipe coupled to the housing and exhausting gas in the inner space to the outside; A vacuum pump installed at a first point of the pipe and controlling a pressure of the internal space; A pipe valve installed in the pipe at a second point between the first point and the housing and controlling the flow rate of the gas flowing in or out of the pipe according to the pressure of the internal space; And a first valve having one end connected to the vacuum hole and the other end connected to the pipe between the first point and the second point and a first valve opening and closing the first line. In the processing method, When the substrate is brought into the internal space, the first pressure is maintained between the first point and the second point, and the pipe valve is partially opened to maintain the pressure in the internal space at a second pressure that is greater than the first pressure. Making a step; And And opening the first valve to maintain the pressure in the vacuum hole at a third pressure less than the second pressure, so that the substrate is vacuum-adsorbed to the vacuum chuck. The method of claim 7, wherein And processing the substrate by supplying a process gas to the internal space when the substrate is vacuum-adsorbed to the vacuum chuck. The method of claim 8, A second line having one end connected to the first line in a section between the vacuum hole and the first valve and the other end connected to the pipe between the housing and the second point; And a second valve provided on the second line and opening and closing the second line. And after the substrate processing is completed, opening the second valve to maintain the difference between the third pressure and the second pressure within a preset range to unload the substrate from the vacuum chuck. Substrate processing method. The method of claim 9, The third line is one end is connected to the first line in the section between the vacuum hole and the first valve, the other end is connected to the gas supply unit for supplying gas, the third line for supplying gas to the first line ; And a third valve provided on the third line to open and close the third line. The unloading of the substrate may further include opening the third valve and supplying gas to the first line to maintain a difference between the third pressure and the second pressure within a preset range. Substrate processing method. The method according to claim 9 or 10, The unloading of the substrate may include closing the pipe valve. The method according to any one of claims 7 to 10, And said third pressure is greater than or equal to said first pressure. A housing having an inner space; A vacuum chuck disposed in the inner space to vacuum-absorb a substrate, wherein first vacuum holes are formed in a first region of the upper surface, and second vacuum holes are formed in a second region different from the first region of the upper surface; A pipe coupled to the housing and exhausting gas in the inner space to the outside; A vacuum pump installed at a first point of the pipe and controlling a pressure of the internal space; A pipe valve installed in the pipe at a second point between the first point and the housing and opening or closing the pipe or adjusting a flow rate of gas flowing through the pipe; And And a vacuum line having a first line connected to the first vacuum holes at one end and connected to the pipe between the first point and the second point and a first valve opening and closing the first line. The substrate processing apparatus characterized by the above-mentioned. The method of claim 13, And the first region is a center region, and the second region is an edge region. The method of claim 13, The vacuum line is A second line having one end connected to the first line in the section between the first vacuum hole and the first valve, and the other end connected to the pipe between the housing and the second point; A third line, one end of which is connected to the first line in a section between the first vacuum hole and the first valve, and the other end of which is connected to a first gas supply unit supplying gas to supply the gas to the first line ; A second valve provided on the second line to open and close the second line; And And a third valve disposed on the third line, the third valve opening and closing the third line. The method according to any one of claims 13 to 15, The vacuum line is And a fourth line, one end of which is connected to the second vacuum hole and the other end of which is connected to a pressure regulating pump that regulates the pressure of the second vacuum hole. The method according to any one of claims 13 to 15, The vacuum line is A fourth line having one end connected to the second vacuum hole and the other end connected to the first line between the first vacuum hole and the first valve; And a second pressure controller provided in the four lines and adjusting the pressure of the fourth line. The method according to any one of claims 13 to 15, The vacuum line is And a fourth valve having one end connected to the second vacuum hole and the other end opening and closing the fourth line and the fourth line connected to the pipe between the first point and the second point. Substrate processing apparatus. The method of claim 18, The vacuum line is A fifth line, one end of which is connected to the fourth line in a section between the second vacuum hole and the fourth valve, and the other end of which is connected to the pipe between the housing and the second point; One end is connected to the fourth line in the section between the second vacuum hole and the fourth valve, the other end is connected to the second gas supply unit for supplying gas, the sixth line for supplying gas to the fourth line ; A fifth valve provided on the fifth line to open and close the fifth line; And And a sixth valve provided on the sixth line to open and close the sixth line.

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