WO2019044315A1 - Adhesion strengthening treatment apparatus and adhesion strengthening treatment method - Google Patents

Adhesion strengthening treatment apparatus and adhesion strengthening treatment method Download PDF

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Publication number
WO2019044315A1
WO2019044315A1 PCT/JP2018/028338 JP2018028338W WO2019044315A1 WO 2019044315 A1 WO2019044315 A1 WO 2019044315A1 JP 2018028338 W JP2018028338 W JP 2018028338W WO 2019044315 A1 WO2019044315 A1 WO 2019044315A1
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Prior art keywords
processing space
gas
adhesion
value
pressure
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PCT/JP2018/028338
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French (fr)
Japanese (ja)
Inventor
雄大 和食
元規 福井
小野　和也
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株式会社Ｓｃｒｅｅｎホールディングス
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Publication of WO2019044315A1 publication Critical patent/WO2019044315A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the present invention relates to an adhesion strengthening processing apparatus for performing adhesion strengthening processing on a substrate and an adhesion strengthening processing method.
  • a resist pattern is formed on a surface to be processed of a substrate, and then exposure processing and development processing are performed to form a resist pattern.
  • an adhesion enhancer such as HMDS (hexamethyldisilazane) is applied to the treated surface of the substrate before forming the resist film.
  • a chamber space is formed by the chamber body and the sealing lid. While the substrate is accommodated in the chamber space, the chamber space is evacuated. When the pressure in the chamber space drops to a predetermined vacuum pressure, HMDS is supplied to the chamber space through the supply line provided in the hermetic lid. JP 2005-93952A
  • the adhesion enhancer may be intensively applied to a part of the processing surface of the substrate.
  • An object of the present invention is to provide an adhesion strengthening treatment apparatus and an adhesion strengthening treatment method capable of uniformly applying an adhesion strengthening agent to a treated surface of a substrate.
  • An adhesion strengthening processing apparatus includes a chamber forming a processing space in which a substrate is accommodated, a decompression unit that reduces the pressure in the processing space by discharging a gas from the processing space, and a processing space And an inert gas supply unit for supplying an inert gas to the processing space while the gas is being discharged by the pressure reduction unit so that the first pressure is lower than the atmospheric pressure, and the inert gas supply unit After the inert gas is supplied to the processing space, the adhesion reducing agent is contained in the processing space in a state where the gas is discharged by the decompression unit so that the pressure of the processing space becomes a second value lower than the atmospheric pressure. And an adhesion enhancing gas supply unit for supplying an adhesion enhancing gas.
  • the inert gas is supplied to the processing space while the gas is discharged from the processing space, so that the pressure drop in the processing space is suppressed. Since the adhesion strengthening gas is supplied to the processing space in that state, the flow rate of the adhesion strengthening gas in the processing space is prevented from rising, and the adhesion strengthening gas is gradually spread in the processing space. This prevents the contact intensifying gas from being in intensive contact with a part of the processing surface of the substrate. As a result, the adhesion enhancer can be applied uniformly over the entire treated surface of the substrate.
  • the adhesion strengthening gas supply unit may start supply of the adhesion strengthening gas to the processing space when the supply of the inert gas to the processing space by the inert gas supply unit is stopped.
  • the decrease in the concentration of the intensified gas in the processing space is suppressed.
  • the application amount of the adhesion enhancer on the surface to be processed of the substrate can be controlled with high accuracy.
  • the inert gas supply unit supplies the inert gas to the processing space at a first flow rate, and the adhesion strengthening gas supply unit processes the adhesion strengthening gas at a second flow rate smaller than the first flow rate It may be supplied to
  • the adhesion enhancer can be uniformly applied to the entire treated surface of the substrate while reducing the amount of adhesion strengthening gas used.
  • the decompression unit reduces the pressure in the processing space to a third value lower than the first value and lower than the second value
  • the inert gas supply unit reduces the pressure in the processing space by the decompression unit.
  • the inert gas may be supplied to the processing space such that the pressure of the processing space rises from the third value to the first value after decreasing to the third value.
  • the inert gas by supplying the inert gas after the pressure in the processing space is sufficiently reduced, impurities such as liquid remaining in the processing space are efficiently removed. Thereby, the inert gas can be quickly replaced with the adhesion enhancing gas at the time of supply of the adhesion enhancing gas. In addition, since the impurities are prevented from being mixed into the adhesion enhancing gas, the processing accuracy of the substrate is further enhanced.
  • the second value is lower than the first value, and the adhesion strengthening gas supply unit supplies the adhesion strengthening gas to the processing space so that the pressure in the processing space is reduced from the first value to the second value.
  • the adhesion enhancer can be uniformly applied to the entire treated surface of the substrate while reducing the amount of adhesion strengthening gas used.
  • the adhesion strengthening processing method includes the steps of: housing a substrate in a processing space formed by a chamber; and processing the pressure of the processing space to a first value lower than atmospheric pressure. After the steps of supplying the inert gas to the processing space while discharging the gas from the space and the steps of supplying the inert gas, the processing space has a second value that is lower than the atmospheric pressure. And supplying an adhesion enhancing gas containing an adhesion enhancing agent to the processing space while discharging the gas from the chamber.
  • the inert gas is supplied to the processing space while the gas is discharged from the processing space, the decrease in pressure in the processing space is suppressed. Since the adhesion strengthening gas is supplied to the processing space in that state, the flow rate of the adhesion strengthening gas in the processing space is prevented from rising, and the adhesion strengthening gas is gradually spread in the processing space. This prevents the contact intensifying gas from being in intensive contact with a part of the processing surface of the substrate. As a result, the adhesion enhancer can be applied uniformly over the entire treated surface of the substrate.
  • the step of supplying the adhesion enhancing gas may include starting supply of the adhesion enhancing gas to the processing space when the supply of the inert gas to the processing space is stopped.
  • the decrease in the concentration of the intensified gas in the processing space is suppressed.
  • the application amount of the adhesion enhancer on the surface to be processed of the substrate can be controlled with high accuracy.
  • the step of supplying the inert gas includes supplying the inert gas to the processing space at the first flow rate, and the step of supplying the adhesion strengthening gas is smaller than the first flow rate of the adhesion strengthening gas It may include supplying the processing space at a second flow rate.
  • the adhesion enhancer can be uniformly applied to the entire treated surface of the substrate while reducing the amount of adhesion strengthening gas used.
  • the adhesion strengthening processing method further includes, before the step of supplying the inert gas, reducing the pressure of the processing space to a third value lower than the first value and lower than the second value.
  • the step of supplying the inert gas may include supplying the inert gas to the processing space such that the pressure of the processing space is increased from the third value to the first value.
  • the inert gas by supplying the inert gas after the pressure in the processing space is sufficiently reduced, impurities such as liquid remaining in the processing space are efficiently removed. Thereby, the inert gas can be quickly replaced with the adhesion enhancing gas at the time of supply of the adhesion enhancing gas. In addition, since the impurities are prevented from being mixed into the adhesion enhancing gas, the processing accuracy of the substrate is further enhanced.
  • the second value is lower than the first value, and in the step of supplying the adhesion strengthening gas, the adhesion strengthening gas in the processing space is reduced such that the pressure in the processing space is reduced from the first value to the second value. May be included.
  • the adhesion enhancer can be uniformly applied to the entire treated surface of the substrate while reducing the amount of adhesion strengthening gas used.
  • the adhesion enhancer can be uniformly applied to the treated surface of the substrate.
  • FIG. 1 is a schematic cross-sectional view showing a specific configuration example of the adhesion strengthening processing apparatus.
  • FIG. 2 is a block diagram for explaining a control system of the adhesion strengthening processing apparatus.
  • FIG. 3 is a flowchart showing an outline of the adhesion strengthening processing in the adhesion strengthening processing device.
  • FIG. 4 is a diagram for explaining changes in pressure in the processing space.
  • FIG. 5 is a view for explaining a comparative example of the present invention.
  • the substrate refers to a substrate for an FPD (Flat Panel Display) such as a semiconductor substrate, a liquid crystal display device or an organic EL (Electro Luminescence) display device, a substrate for an optical disk, a substrate for a magnetic disk, and a substrate for a magneto-optical disk.
  • FPD Fluorescence Panel Display
  • FIG. 1 is a schematic cross-sectional view showing a specific configuration example of the adhesion strengthening processing apparatus 100 according to the present embodiment.
  • the adhesion strengthening processing apparatus 100 of FIG. 1 includes a chamber 201, a cover lifting and lowering mechanism 209, a pressure sensor 210, a plurality of support pins 243, a support pin lifting and lowering mechanism 247, and an exhaust device 256.
  • the chamber 201 includes a plate 205 and a cover 207.
  • a plurality of (eg, three) proximity balls 241 are provided on the upper surface of the plate 205.
  • the substrate W is mounted on the plurality of proximity balls 241 in a horizontal posture. In this case, the processed surface of the substrate W is directed upward.
  • the cover 207 is provided to cover the upper side of the substrate W to be mounted.
  • the cover 207 is connected to the cover lifting and lowering mechanism 209.
  • the cover lifting and lowering mechanism 209 is, for example, an air cylinder, and lifts and lowers the cover 207 between the upper position and the lower position. In FIG. 1, the cover 207 is in the lower position. When the cover 207 is in the lower position, an airtight processing space PS in which the substrate W is accommodated is formed between the cover 207 and the plate 205.
  • the pressure sensor 210 detects the pressure in the processing space PS.
  • the cover 207 is provided with a gas flow channel 213.
  • the gas flow channel 213 has an open end 213 a at the center of the lower surface of the cover 207.
  • the open end 213 a faces the central portion of the substrate W placed on the plate 205.
  • An inert gas supply unit Q1 and a close contact gas supply unit Q2 are connected to the gas flow channel 213 via the gas supply pipe 261, respectively.
  • the inert gas supply unit Q1 supplies the inert gas to the processing space PS through the gas supply pipe 261 and the gas flow channel 213.
  • the inert gas is, for example, nitrogen gas.
  • the adhesion enhancing gas supply unit Q2 supplies the adhesion enhancing gas to the processing space PS through the gas supply pipe 261 and the gas flow channel 213.
  • the adhesion enhancing gas comprises an adhesion enhancing agent.
  • the adhesion enhancer is, for example, HMDS (hexamethyldisilazane).
  • Each of the inert gas supply unit Q1 and the adhesion enhancing gas supply unit Q2 includes, for example, a valve, and the supply timing of the inert gas and the adhesion enhancing gas can be controlled by controlling the opening / closing timing of the valve.
  • a plurality of (for example, three) through holes 245 are provided so as to vertically penetrate the plate 205.
  • a plurality of (for example, three) support pins 243 are respectively inserted into the through holes 245 of the plate 205.
  • the lower end portion of each support pin 243 is connected to the support pin lifting mechanism 247 below the plate 205.
  • the support pin raising and lowering mechanism 247 raises and lowers the plurality of support pins 243.
  • a sealing portion 243 a on the disc is attached to the upper end portion of each support pin 243.
  • a concave portion 245a capable of accommodating the sealing portion 243a is formed.
  • a temperature control unit 249 for adjusting the temperature of the substrate W is provided inside the plate 205.
  • the temperature control unit 249 is, for example, a heater.
  • the temperature control unit 249 performs heat treatment on the substrate W placed on the plate 205 by adjusting the temperature of the plate 205.
  • An exhaust slit 251 is formed on the plate 205 so as to extend in the circumferential direction outward of the region on which the substrate W is to be mounted. Further, a plurality of exhaust ports 253 are formed to communicate with the exhaust slits 251, respectively.
  • An exhaust pipe 255 is connected to the plurality of exhaust ports 253.
  • An exhaust device 256 is interposed in the exhaust pipe 255.
  • the exhaust device 256 includes, for example, a pump, and exhausts the gas from the processing space PS through the exhaust pipe 255. Thereby, the processing space PS is decompressed. In this example, the operating state of the exhaust system 256 can be switched between the strong state and the weak state.
  • the pressure of the processing space PS can be adjusted lower than in the case of operating the exhaust system 256 in the weak state.
  • an ejector may be used which discharges the gas from the processing space PS by an entrainment action by the compressed gas.
  • FIG. 2 is a block diagram for explaining a control system of the adhesion strengthening processing apparatus 100.
  • the adhesion strengthening processing apparatus 100 includes a control unit 150.
  • Control unit 150 includes a CPU (central processing unit), a ROM (read only memory), a RAM (random access memory), a storage device, and the like.
  • the control unit 150 includes a cover lift control unit 51, a support pin lift control unit 52, a pressure reduction control unit 53, an inert gas supply control unit 54, a close contact gas supply control unit 55, a temperature control control unit 56 and a time control unit 57. Including.
  • the functions of these components (51 to 57) are realized by the CPU executing a computer program stored in a storage medium such as a ROM or a storage device.
  • the pressure sensor 210 provides the pressure reduction control unit 53 and the inert gas supply control unit 54 with a value representing the detected pressure (hereinafter referred to as a detected pressure value).
  • the cover lift control unit 51 controls the cover lift mechanism 209 to control the lift of the cover 207 in FIG. 1.
  • the support pin elevation control unit 52 controls the elevation of the plurality of support pins 243 in FIG. 1 by controlling the support pin elevation mechanism 247.
  • the pressure reduction control unit 53 controls the exhaust device 256 to control the exhaust of the processing space PS.
  • the inert gas supply control unit 54 controls the supply of the inert gas to the processing space PS by controlling the inert gas supply unit Q1.
  • the adhesion strengthening gas supply control unit 55 controls the supply of the adhesion strengthening gas to the processing space PS by controlling the adhesion strengthening gas supply unit Q2.
  • the temperature adjustment control unit 56 adjusts the temperature adjustment of the substrate W by controlling the temperature adjustment unit 249.
  • the time control unit 57 controls the start and end timings of the operations of the pressure reduction control unit 53, the inert gas supply control unit 54, the close contact gas supply control unit 55, and the temperature control control unit 56.
  • FIG. 3 is a flowchart showing an outline of the adhesion strengthening processing in the adhesion strengthening processing apparatus 100.
  • the cover lift control unit 51 moves the cover 207 to the upper position (step S1).
  • a transfer device (not shown) transfers the substrate W above the plate 205.
  • the support pin elevation control unit 52 raises the plurality of support pins 243 (step S2).
  • the substrate is transferred from the transfer device (not shown) to the plurality of support pins 243.
  • the support pin elevation control unit 52 lowers the plurality of support pins 243 (step S3).
  • the substrate W is placed on the plurality of proximity balls 241.
  • the cover lift control unit 51 moves the cover 207 to the lower position (step S4). Thereby, the airtight processing space PS which accommodates the board
  • the pressure reduction control unit 53 starts the operation of the exhaust device 256 (step S5). In this case, the pressure reduction control unit 53 sets the operation state of the exhaust device 256 to a weak state. Further, the temperature control unit 56 starts temperature control of the substrate W (step S6).
  • the pressure reduction control unit 53 determines whether the detected pressure value from the pressure sensor 210 is equal to or less than a predetermined low vacuum value P1 (step S7). The pressure reduction control unit 53 repeats step S7 until the detected pressure value becomes equal to or less than the low vacuum value P1. When the detected pressure value becomes equal to or less than the low vacuum value P1, the pressure reduction control unit 53 switches the operating state of the exhaust device 256 to the strong state (step S8).
  • the inert gas supply control unit 54 determines whether the detected pressure value from the pressure sensor 210 has become equal to or less than a predetermined high vacuum value P2 (step S9). The inert gas supply control unit 54 repeats step S9 until the detected pressure value becomes equal to or less than the high vacuum value P2. When the detected pressure value becomes equal to or less than the high vacuum value P2, the inert gas supply control unit 54 starts the supply of the inert gas to the processing space PS (step S10).
  • the inert gas supply control unit 54 stops the supply of the inert gas to the processing space PS (step S11).
  • the adhesion enhancing gas supply control unit 55 starts the supply of the adhesion enhancing gas to the processing space PS (step S12).
  • the inert gas in the processing space PS is replaced with the adhesion enhancing gas.
  • the adhesion enhancing gas supply control unit 55 stops the supply of the adhesion enhancing gas to the processing space PS (step S12) S13). Further, the pressure reduction control unit 53 switches the operation state of the exhaust device 256 to the weak state (step S14).
  • step S14 After the operation state of the exhaust device 256 is switched in step S14 and a predetermined maintenance time has elapsed, the inert gas supply control unit 54 starts supply of inert gas to the processing space PS (step S15). . Further, the pressure reduction control unit 53 switches the operation state of the exhaust device 256 to the strong state (step S16).
  • the decompression control unit 53 switches the operating state of the exhaust system 256 to the weak state (step S17).
  • the pressure reduction control unit 53 determines whether the detected pressure value from the pressure sensor 210 has become equal to or more than a predetermined low vacuum value P3 (step S18).
  • the low vacuum value P3 is a value close to the low vacuum value P1 described above and slightly lower than the low vacuum value P1.
  • the pressure reduction control unit 53 repeats step S18 until the detected pressure value becomes equal to or higher than the low vacuum value P3.
  • the pressure reduction control unit 53 stops the operation of the exhaust device 256 (step S19).
  • the inert gas supply control unit 54 stops the supply of the inert gas to the processing space PS (step S20).
  • the temperature control unit 56 stops the temperature control of the substrate W (step S21).
  • the cover lift control unit 51 moves the cover 207 to the upper position (step S22). Further, the support pin elevation control unit 52 raises the plurality of support pins 243 (step S23). Thereby, the substrate W is passed from the plurality of proximity balls 241 to the plurality of support pins 243. In this state, a transfer device (not shown) receives the substrate W from the plurality of support pins 243, and carries the substrate W out of the adhesion strengthening processing apparatus 100. Thus, a series of operations of the adhesion strengthening processing apparatus 100 are completed.
  • FIG. 4 is a diagram for describing a change in pressure of the processing space PS.
  • FIG. 4 shows the change in the operating state of the exhaust device 256 and the supply timing of the inert gas and the adhesion enhancing gas, along with the change in pressure in the processing space PS.
  • the horizontal axis represents time
  • the vertical axis represents the pressure of the processing space PS and the flow rates of the inert gas and the adhesion enhancing gas.
  • time t1 is after the airtight processing space PS is formed and the pressure of the processing space PS is lowered to the low vacuum value P1 (Yes in step S7 of FIG. 3) .
  • the low vacuum value P1 is, for example, a value in the range of -4 kPa or more and -1 kPa or less, and is, for example, -2 kPa.
  • the operating state of the exhaust system 256 is switched to the strong state (step S8 in FIG. 3).
  • the pressure in the processing space PS further decreases, and the pressure in the processing space PS becomes the high vacuum value P2 at time t2 (Yes in step S9 in FIG. 3).
  • the high vacuum value P2 is an example of a third value.
  • the high vacuum value P2 is, for example, a value in the range of -25 kPa to -18 kPa, and is, for example, -20 kPa.
  • the supply of the inert gas to the processing space PS is started (step S10 in FIG. 3).
  • the pressure of the processing space PS is increased by the supply of the inert gas.
  • the exhaust amount by the exhaust device 256 and the supply amount of the inert gas are balanced, the pressure of the processing space PS converges to the intermediate value P4.
  • the intermediate value P4 is lower than the low vacuum value P1 and higher than the high vacuum value P2.
  • the intermediate value P4 is an example of a first value.
  • the intermediate value P4 is, for example, a value in the range of -10 kPa to -5 kPa, and is, for example, -7 kPa.
  • the supply of the inert gas is stopped and the supply of the adhesion strengthening gas is started (steps S11 and S12 in FIG. 3).
  • the flow rate of the adhesion strengthening gas is smaller than the flow rate of the inert gas. Therefore, the pressure in the processing space PS drops from the intermediate value P4.
  • the pressure of the processing space PS converges to the intermediate value P5.
  • Intermediate value P5 is higher than high vacuum value P2 and lower than intermediate value P4.
  • the intermediate value P5 is an example of a second value.
  • the intermediate value P5 is, for example, a value in the range of -20 kPa or more and -10 kPa or less, and is, for example, -15 kPa.
  • the supply of the intensified gas is stopped, and the operating state of the exhaust device 256 is switched to the weak state (steps S13 and S14 in FIG. 3).
  • the pressure of the processing space PS is maintained at the intermediate value P5 while the processing space PS is filled with the adhesion enhancing gas.
  • the adhesion enhancer is applied to the surface to be processed of the substrate W in a period from time t3 to time t4. Thereby, the hydrophobicity of the treated surface of the substrate W is enhanced.
  • a treatment film (for example, a resist film) is formed on the surface to be treated of the substrate W in a later step. The adhesion between the surface to be treated of the substrate W and the treatment film is secured by the application of the adhesion enhancer.
  • the supply of the inert gas is started and the operating state of the exhaust device 256 is switched to the strong state (steps S15 and S16 in FIG. 3).
  • the pressure in the processing space PS rises again and converges to the intermediate value P4.
  • the flow rate of the inert gas in the period from time t5 to time t7 is equal to the flow rate of the inert gas in the period from time t2 to time t3, but the inert gas in the period from time t5 to time t7 May be different from the flow rate of the inert gas in the period from time t3 to time t4.
  • the operating state of the exhaust device 256 is switched to the weak state (step S17 in FIG. 3).
  • the pressure in the processing space PS further increases.
  • the operation of the exhaust device 256 is stopped (step S19 in FIG. 3) and the supply of inert gas is stopped (step S20 in FIG. 3). ).
  • the pressure of the processing space PS is increased to the intermediate value P4 by supplying the inert gas to the processing space PS. Do. In this state, the supply of the inert gas is stopped and the supply of the intensified gas is started, so that the pressure of the processing space PS decreases from the intermediate value P4 to the intermediate value P5.
  • FIG. 5 is a view for explaining a comparative example of the present invention. Similar to FIG. 4, FIG. 5 shows changes in the operating state of the exhaust device 256 and supply timings of the inert gas and the adhesion enhancing gas with changes in the pressure of the processing space PS.
  • the comparative example of FIG. 5 differs from the example of FIG. 4 in that the inert gas is not supplied before the supply of the adhesion strengthening gas.
  • the time point t11 is a time point after the pressure of the processing space PS is reduced to the low vacuum value P1 after the airtight processing space PS is formed as in the time t1 of FIG. 4.
  • the pressure of the processing space PS is reduced from the low vacuum value P1 to the high vacuum value P2 in a period from time point t11 to time point t12.
  • the adhesion enhancing gas is supplied to the processing space PS from time t12 to time t13, and the pressure of the processing space PS is maintained at the intermediate value P5 from time t13 to time t14.
  • the inert gas is supplied to the processing space PS from time t14 to time t15, and the pressure of the processing space PS rises from the intermediate value P4 to the low vacuum value P3 in the period from time t15 to time 16.
  • the supply of the adhesion strengthening gas is started in a state where the pressure of the processing space PS is the high vacuum value P2.
  • the adhesion strengthening gas introduced into the processing space PS moves at high speed from the gas flow channel 213 located above the central portion of the substrate W in FIG. 1 toward the exhaust slit 251 located outside the substrate W. Do. Therefore, the adhesion strengthening gas is likely to contact the peripheral portion of the substrate W intensively.
  • the coating amount of the adhesion enhancer per unit area in the peripheral portion of the substrate W becomes larger than the application amount of the adhesion enhancer per unit area in the central portion of the substrate W. Thereby, the hydrophobicity of the treated surface of the substrate W varies.
  • the supply of the adhesion enhancing gas is started in a state where the pressure of the processing space PS is adjusted to a relatively high intermediate value P4.
  • the increase in the flow velocity of the adhesion enhancing gas in the processing space PS is suppressed.
  • the adhesion strengthening gas is gradually spread from the opening end 213a of the gas flow channel 213 to the entire processing space PS. Therefore, the adhesion strengthening gas uniformly contacts the entire treated surface of the substrate W. Therefore, the adhesion enhancer can be uniformly applied to the entire treated surface of the substrate W. Thereby, the hydrophobicity of the to-be-processed surface of the board
  • substrate W can be adjusted uniformly.
  • the inert gas is supplied to the processing space PS after the pressure in the processing space PS is reduced to the high vacuum value P2.
  • impurities such as liquid remaining in the processing space PS are efficiently removed.
  • the inert gas can be quickly replaced with the adhesion enhancing gas at the time of supply of the adhesion enhancing gas.
  • the impurity is prevented from mixing into the adhesion strengthening gas, the processing accuracy of the substrate W by the adhesion strengthening processing apparatus 100 is further enhanced.
  • the flow rate of the adhesion strengthening gas is smaller than the flow rate of the inert gas, and the pressure of the processing space PS at the time of supply of the inert gas (intermediate value P4) Pressure (intermediate value P5) is low.
  • adherence strengthening gas can be reduced.
  • the increase in the flow velocity of the adhesion enhancing gas can be more reliably suppressed, the uniformity of the application of the adhesion enhancing agent to the entire treated surface of the substrate W can be further enhanced.
  • the supply of the inert gas is started after the pressure of the processing space PS is reduced to the high vacuum value P2 by the exhaust device 256, but the present invention is limited thereto Absent.
  • the operating state of the exhaust device 256 may be switched to the strong state and the supply of the inert gas may be started. In this case, the pressure in the processing space PS drops from the low vacuum value P1 to the intermediate value P4.
  • the inert gas is supplied such that the pressure of the processing space PS becomes the intermediate value P4
  • the adhesion strengthening gas is supplied such that the pressure of the processing space PS becomes the intermediate value P5 lower than the intermediate value P4.
  • the present invention is not limited to this.
  • the flow rates of the inert gas and the adhesion enhancing gas may be set such that the pressure of the processing space PS at the time of supplying the inert gas and the pressure of the processing space PS at the time of supplying the adhesion enhancing gas are equal.
  • the flow rates of the inert gas and the adhesion enhancing gas may be set such that the pressure of the processing space PS at the time of supply of the adhesion enhancing gas is higher than the pressure of the processing space PS at the time of supplying the inert gas.
  • the operating state of the exhaust device 256 is before supply of the inert gas (period from time t1 to time t2 in FIG. 4) and at time of supply of inert gas (time t2 to time t3 in FIG. 4). 4 and the supply of the adhesion strengthening gas (the period from time t3 to time t4 in FIG. 4), the operating state of the exhaust device 256 may be switched during these periods.
  • the operating state of the exhaust device 256 may be switched to the weak state at least one of the supply of the inert gas and the supply of the adhesion strengthening gas.
  • the operating state of the exhaust device 256 may be switchable to three or more stages.
  • the adhesion enhancing agent made of HMDS is used as the organic material, but if the hydrophobicity of the substrate W can be enhanced, the adhesion enhancing made of another organic material such as TMSDMA (trimethylsilyldimethylamine) Agents may be used. Further, in the above embodiment, nitrogen gas is used as the inert gas, but other inert gas that does not affect the adhesion enhancer may be used.
  • the adhesion strengthening processing apparatus 100 is an example of the adhesion strengthening processing apparatus
  • the chamber 201 is an example of a chamber
  • the processing space PS is an example of a processing space
  • the exhaust device 256 is an example of a pressure reducing unit.
  • the inert gas supply unit Q1 is an example of the inert gas supply unit
  • the adhesion strengthening gas supply unit Q2 is an example of the adhesion strengthening gas supply unit
  • the intermediate value P4 is an example of the first value
  • the intermediate value P5 is an example of a second value
  • the high vacuum value P2 is an example of a third value.

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Abstract

An adhesion strengthening treatment apparatus includes a chamber, a decompression section, an inactive gas supply section, and an adhesion strengthening gas supply section. The chamber forms a treatment space in which a substrate is housed. The decompression section reduces the pressure in the treatment space by discharging the gas from the treatment space. The inactive gas supply section supplies an inactive gas to the treatment space in a state where the gas is discharged by the decompression section, so that the pressure in the treatment space becomes a first value lower than the atmospheric pressure. After the inactive gas has been supplied to the treatment space by the inactive gas supply section, the adhesion strengthening gas supply section supplies an adhesion strengthening gas containing an adhesion strengthening agent to the treatment space in a state where the gas is discharged by the decompression section, so that the pressure in the treatment space becomes a second value lower than the atmospheric pressure.

Description

密着強化処理装置および密着強化処理方法Adhesion strengthening processing apparatus and adhesion strengthening processing method
　本発明は、基板に密着強化処理を行う密着強化処理装置および密着強化処理方法に関する。 The present invention relates to an adhesion strengthening processing apparatus for performing adhesion strengthening processing on a substrate and an adhesion strengthening processing method.
　半導体デバイス等の製造におけるリソグラフィ工程では、基板の被処理面上にレジスト膜が形成された後、露光処理および現像処理が行われることにより、レジストパターンが形成される。通常、基板の被処理面とレジスト膜との密着性を高めるため、レジスト膜の形成前に、基板の被処理面にＨＭＤＳ（ヘキサメチルジシラザン）等の密着強化剤が塗布される。 In a lithography process in the manufacture of semiconductor devices and the like, a resist pattern is formed on a surface to be processed of a substrate, and then exposure processing and development processing are performed to form a resist pattern. Usually, in order to enhance the adhesion between the treated surface of the substrate and the resist film, an adhesion enhancer such as HMDS (hexamethyldisilazane) is applied to the treated surface of the substrate before forming the resist film.
　特許文献１記載の密着強化装置においては、チャンバー本体および密閉蓋によりチャンバー空間が形成される。チャンバー空間に基板が収容された状態で、チャンバー空間の真空引きが行われる。チャンバー空間の圧力が所定の真空圧に降下すると、密閉蓋に設けられた供給管路を通してチャンバー空間にＨＭＤＳが供給される。
特開２００５－９３９５２号公報 In the adhesion strengthening device described in Patent Document 1, a chamber space is formed by the chamber body and the sealing lid. While the substrate is accommodated in the chamber space, the chamber space is evacuated. When the pressure in the chamber space drops to a predetermined vacuum pressure, HMDS is supplied to the chamber space through the supply line provided in the hermetic lid.
JP 2005-93952A
　上記のようにして減圧状態のチャンバー空間に密着強化剤が供給されると、チャンバー空間での密着強化剤の流速が高くなる。この場合、基板の被処理面の一部に集中的に密着強化剤が塗布されることがある。 When the adhesion enhancing agent is supplied to the chamber space in a reduced pressure state as described above, the flow rate of the adhesion enhancing agent in the chamber space increases. In this case, the adhesion enhancer may be intensively applied to a part of the processing surface of the substrate.
　本発明の目的は、基板の被処理面に均一に密着強化剤を塗布することが可能な密着強化処理装置および密着強化処理方法を提供することである。 An object of the present invention is to provide an adhesion strengthening treatment apparatus and an adhesion strengthening treatment method capable of uniformly applying an adhesion strengthening agent to a treated surface of a substrate.
　（１）本発明の一局面に従う密着強化処理装置は、基板が収容される処理空間を形成するチャンバと、処理空間から気体を排出することにより処理空間の圧力を低下させる減圧部と、処理空間の圧力が大気圧よりも低い第１の値となるように、減圧部により気体が排出されている状態で処理空間に不活性ガスを供給する不活性ガス供給部と、不活性ガス供給部により処理空間に不活性ガスが供給された後に、処理空間の圧力が大気圧よりも低い第２の値となるように、減圧部により気体が排出されている状態で処理空間に密着強化剤を含む密着強化ガスを供給する密着強化ガス供給部とを備える。 (1) An adhesion strengthening processing apparatus according to one aspect of the present invention includes a chamber forming a processing space in which a substrate is accommodated, a decompression unit that reduces the pressure in the processing space by discharging a gas from the processing space, and a processing space And an inert gas supply unit for supplying an inert gas to the processing space while the gas is being discharged by the pressure reduction unit so that the first pressure is lower than the atmospheric pressure, and the inert gas supply unit After the inert gas is supplied to the processing space, the adhesion reducing agent is contained in the processing space in a state where the gas is discharged by the decompression unit so that the pressure of the processing space becomes a second value lower than the atmospheric pressure. And an adhesion enhancing gas supply unit for supplying an adhesion enhancing gas.
　この密着強化処理装置においては、処理空間から気体が排出されつつ処理空間に不活性ガスが供給されるので、処理空間の圧力の低下が抑制される。その状態で処理空間に密着強化ガスが供給されるため、処理空間における密着強化ガスの流速の上昇が抑制され、処理空間で密着強化ガスが緩やかに拡がる。これにより、基板の被処理面の一部に密着強化ガスが集中的に接触することが防止される。その結果、基板の被処理面の全体に均一に密着強化剤を塗布することができる。 In this adhesion enhancement processing apparatus, the inert gas is supplied to the processing space while the gas is discharged from the processing space, so that the pressure drop in the processing space is suppressed. Since the adhesion strengthening gas is supplied to the processing space in that state, the flow rate of the adhesion strengthening gas in the processing space is prevented from rising, and the adhesion strengthening gas is gradually spread in the processing space. This prevents the contact intensifying gas from being in intensive contact with a part of the processing surface of the substrate. As a result, the adhesion enhancer can be applied uniformly over the entire treated surface of the substrate.
　（２）密着強化ガス供給部は、不活性ガス供給部による処理空間への不活性ガスの供給が停止された時点で処理空間への密着強化ガスの供給を開始してもよい。 (2) The adhesion strengthening gas supply unit may start supply of the adhesion strengthening gas to the processing space when the supply of the inert gas to the processing space by the inert gas supply unit is stopped.
　この場合、処理空間における密着強化ガスの濃度の低下が抑制される。それにより、基板の被処理面への密着強化剤の塗布量を精度良く制御することができる。 In this case, the decrease in the concentration of the intensified gas in the processing space is suppressed. Thereby, the application amount of the adhesion enhancer on the surface to be processed of the substrate can be controlled with high accuracy.
　（３）不活性ガス供給部は、不活性ガスを第１の流量で処理空間に供給し、密着強化ガス供給部は、密着強化ガスを第１の流量よりも小さい第２の流量で処理空間に供給してもよい。 (3) The inert gas supply unit supplies the inert gas to the processing space at a first flow rate, and the adhesion strengthening gas supply unit processes the adhesion strengthening gas at a second flow rate smaller than the first flow rate It may be supplied to
　この場合、密着強化ガスの使用量を低減しつつ基板の被処理面の全体に均一に密着強化剤を塗布することができる。 In this case, the adhesion enhancer can be uniformly applied to the entire treated surface of the substrate while reducing the amount of adhesion strengthening gas used.
　（４）減圧部は、処理空間の圧力を第１の値よりも低くかつ第２の値よりも低い第３の値に低下させ、不活性ガス供給部は、減圧部により処理空間の圧力が第３の値に低下した後に処理空間の圧力が第３の値から第１の値に上昇するように処理空間に不活性ガスを供給してもよい。 (4) The decompression unit reduces the pressure in the processing space to a third value lower than the first value and lower than the second value, and the inert gas supply unit reduces the pressure in the processing space by the decompression unit. The inert gas may be supplied to the processing space such that the pressure of the processing space rises from the third value to the first value after decreasing to the third value.
　この場合、処理空間の圧力が十分に低下された後に不活性ガスが供給されることにより、処理空間に残留する液体等の不純物が効率良く除去される。それにより、密着強化ガスの供給時に、不活性ガスを密着強化ガスで迅速に置換することができる。また、密着強化ガスに不純物が混入することが防止されるので、基板の処理精度がより高くなる。 In this case, by supplying the inert gas after the pressure in the processing space is sufficiently reduced, impurities such as liquid remaining in the processing space are efficiently removed. Thereby, the inert gas can be quickly replaced with the adhesion enhancing gas at the time of supply of the adhesion enhancing gas. In addition, since the impurities are prevented from being mixed into the adhesion enhancing gas, the processing accuracy of the substrate is further enhanced.
　（５）第２の値は第１の値よりも低く、密着強化ガス供給部は、処理空間の圧力が第１の値から第２の値に低下するように処理空間に密着強化ガスを供給してもよい。 (5) The second value is lower than the first value, and the adhesion strengthening gas supply unit supplies the adhesion strengthening gas to the processing space so that the pressure in the processing space is reduced from the first value to the second value. You may
　この場合、密着強化ガスの使用量を低減しつつ基板の被処理面の全体に均一に密着強化剤を塗布することができる。 In this case, the adhesion enhancer can be uniformly applied to the entire treated surface of the substrate while reducing the amount of adhesion strengthening gas used.
　（６）本発明の他の局面に従う密着強化処理方法は、チャンバが形成する処理空間に基板を収容するステップと、処理空間の圧力が大気圧よりも低い第１の値となるように、処理空間から気体を排出しつつ処理空間に不活性ガスを供給するステップと、不活性ガスを供給するステップの後に、処理空間の圧力が大気圧よりも低い第２の値となるように、処理空間から気体を排出しつつ処理空間に密着強化剤を含む密着強化ガスを供給するステップとを含む。 (6) The adhesion strengthening processing method according to another aspect of the present invention includes the steps of: housing a substrate in a processing space formed by a chamber; and processing the pressure of the processing space to a first value lower than atmospheric pressure. After the steps of supplying the inert gas to the processing space while discharging the gas from the space and the steps of supplying the inert gas, the processing space has a second value that is lower than the atmospheric pressure. And supplying an adhesion enhancing gas containing an adhesion enhancing agent to the processing space while discharging the gas from the chamber.
　この方法によれば、処理空間から気体が排出されつつ処理空間に不活性ガスが供給されるので、処理空間の圧力の低下が抑制される。その状態で処理空間に密着強化ガスが供給されるため、処理空間における密着強化ガスの流速の上昇が抑制され、処理空間で密着強化ガスが緩やかに拡がる。これにより、基板の被処理面の一部に密着強化ガスが集中的に接触することが防止される。その結果、基板の被処理面の全体に均一に密着強化剤を塗布することができる。 According to this method, since the inert gas is supplied to the processing space while the gas is discharged from the processing space, the decrease in pressure in the processing space is suppressed. Since the adhesion strengthening gas is supplied to the processing space in that state, the flow rate of the adhesion strengthening gas in the processing space is prevented from rising, and the adhesion strengthening gas is gradually spread in the processing space. This prevents the contact intensifying gas from being in intensive contact with a part of the processing surface of the substrate. As a result, the adhesion enhancer can be applied uniformly over the entire treated surface of the substrate.
　（７）密着強化ガスを供給するステップは、処理空間への不活性ガスの供給が停止された時点で処理空間への密着強化ガスの供給を開始することを含んでもよい。 (7) The step of supplying the adhesion enhancing gas may include starting supply of the adhesion enhancing gas to the processing space when the supply of the inert gas to the processing space is stopped.
　この場合、処理空間における密着強化ガスの濃度の低下が抑制される。それにより、基板の被処理面への密着強化剤の塗布量を精度良く制御することができる。 In this case, the decrease in the concentration of the intensified gas in the processing space is suppressed. Thereby, the application amount of the adhesion enhancer on the surface to be processed of the substrate can be controlled with high accuracy.
　（８）不活性ガスを供給するステップは、不活性ガスを第１の流量で処理空間に供給することを含み、密着強化ガスを供給するステップは、密着強化ガスを第１の流量よりも小さい第２の流量で処理空間に供給することを含んでもよい。 (8) The step of supplying the inert gas includes supplying the inert gas to the processing space at the first flow rate, and the step of supplying the adhesion strengthening gas is smaller than the first flow rate of the adhesion strengthening gas It may include supplying the processing space at a second flow rate.
　この場合、密着強化ガスの使用量を低減しつつ基板の被処理面の全体に均一に密着強化剤を塗布することができる。 In this case, the adhesion enhancer can be uniformly applied to the entire treated surface of the substrate while reducing the amount of adhesion strengthening gas used.
　（９）密着強化処理方法は、不活性ガスを供給するステップの前に、処理空間の圧力を第１の値よりも低くかつ第２の値よりも低い第３の値に低下させるステップをさらに含み、不活性ガスを供給するステップは、処理空間の圧力が第３の値から第１の値に上昇するように処理空間に不活性ガスを供給することを含んでもよい。 (9) The adhesion strengthening processing method further includes, before the step of supplying the inert gas, reducing the pressure of the processing space to a third value lower than the first value and lower than the second value. Inclusion, the step of supplying the inert gas may include supplying the inert gas to the processing space such that the pressure of the processing space is increased from the third value to the first value.
　この場合、処理空間の圧力が十分に低下された後に不活性ガスが供給されることにより、処理空間に残留する液体等の不純物が効率良く除去される。それにより、密着強化ガスの供給時に、不活性ガスを密着強化ガスで迅速に置換することができる。また、密着強化ガスに不純物が混入することが防止されるので、基板の処理精度がより高くなる。 In this case, by supplying the inert gas after the pressure in the processing space is sufficiently reduced, impurities such as liquid remaining in the processing space are efficiently removed. Thereby, the inert gas can be quickly replaced with the adhesion enhancing gas at the time of supply of the adhesion enhancing gas. In addition, since the impurities are prevented from being mixed into the adhesion enhancing gas, the processing accuracy of the substrate is further enhanced.
　（１０）第２の値は第１の値よりも低く、密着強化ガスを供給するステップは、処理空間の圧力が第１の値から第２の値に低下するように処理空間に密着強化ガスを供給することを含んでもよい。 (10) The second value is lower than the first value, and in the step of supplying the adhesion strengthening gas, the adhesion strengthening gas in the processing space is reduced such that the pressure in the processing space is reduced from the first value to the second value. May be included.
　この場合、密着強化ガスの使用量を低減しつつ基板の被処理面の全体に均一に密着強化剤を塗布することができる。 In this case, the adhesion enhancer can be uniformly applied to the entire treated surface of the substrate while reducing the amount of adhesion strengthening gas used.
　本発明によれば、基板の被処理面に均一に密着強化剤を塗布することができる。 According to the present invention, the adhesion enhancer can be uniformly applied to the treated surface of the substrate.
図１は密着強化処理装置の具体的な構成例を示す模式的断面図である。FIG. 1 is a schematic cross-sectional view showing a specific configuration example of the adhesion strengthening processing apparatus. 図２は密着強化処理装置の制御系について説明するためのブロック図である。FIG. 2 is a block diagram for explaining a control system of the adhesion strengthening processing apparatus. 図３は密着強化処理装置における密着強化処理の概要を示すフローチャートである。FIG. 3 is a flowchart showing an outline of the adhesion strengthening processing in the adhesion strengthening processing device. 図４は処理空間の圧力の変化について説明するための図である。FIG. 4 is a diagram for explaining changes in pressure in the processing space. 図５は本発明の比較例について説明するための図である。FIG. 5 is a view for explaining a comparative example of the present invention.
　以下、本発明の実施の形態に係る密着強化処理装置および密着強化処理方法について図面を参照しながら説明する。なお、以下の説明において、基板とは、半導体基板、液晶表示装置もしくは有機ＥＬ（Electro Luminescence）表示装置等のＦＰＤ（Flat Panel Display）用基板、光ディスク用基板、磁気ディスク用基板、光磁気ディスク用基板、フォトマスク用基板または太陽電池用基板等をいう。 Hereinafter, an adhesion strengthening processing device and an adhesion strengthening processing method according to an embodiment of the present invention will be described with reference to the drawings. In the following description, the substrate refers to a substrate for an FPD (Flat Panel Display) such as a semiconductor substrate, a liquid crystal display device or an organic EL (Electro Luminescence) display device, a substrate for an optical disk, a substrate for a magnetic disk, and a substrate for a magneto-optical disk. A substrate, a photomask substrate, a solar cell substrate or the like.
　［１］構成
　図１は、本実施の形態に係る密着強化処理装置１００の具体的な構成例を示す模式的断面図である。図１の密着強化処理装置１００は、チャンバ２０１、カバー昇降機構２０９、圧力センサ２１０、複数の支持ピン２４３、支持ピン昇降機構２４７および排気装置２５６を備える。 [1] Configuration FIG. 1 is a schematic cross-sectional view showing a specific configuration example of the adhesion strengthening processing apparatus 100 according to the present embodiment. The adhesion strengthening processing apparatus 100 of FIG. 1 includes a chamber 201, a cover lifting and lowering mechanism 209, a pressure sensor 210, a plurality of support pins 243, a support pin lifting and lowering mechanism 247, and an exhaust device 256.
　チャンバ２０１は、プレート２０５およびカバー２０７を含む。プレート２０５の上面には、複数（例えば３つ）のプロキシミティボール２４１が設けられる。複数のプロキシミティボール２４１上に、基板Ｗが水平姿勢で載置される。この場合、基板Ｗの被処理面が上方に向けられる。カバー２０７は、載置される基板Ｗの上方を覆うように設けられる。カバー２０７は、カバー昇降機構２０９に接続されている。カバー昇降機構２０９は、例えばエアシリンダであり、カバー２０７を上方位置と下方位置との間で昇降させる。図１においては、カバー２０７が下方位置にある。カバー２０７が下方位置にあるときに、カバー２０７とプレート２０５との間に、基板Ｗが収容される気密な処理空間ＰＳが形成される。圧力センサ２１０は、処理空間ＰＳの圧力を検出する。 The chamber 201 includes a plate 205 and a cover 207. A plurality of (eg, three) proximity balls 241 are provided on the upper surface of the plate 205. The substrate W is mounted on the plurality of proximity balls 241 in a horizontal posture. In this case, the processed surface of the substrate W is directed upward. The cover 207 is provided to cover the upper side of the substrate W to be mounted. The cover 207 is connected to the cover lifting and lowering mechanism 209. The cover lifting and lowering mechanism 209 is, for example, an air cylinder, and lifts and lowers the cover 207 between the upper position and the lower position. In FIG. 1, the cover 207 is in the lower position. When the cover 207 is in the lower position, an airtight processing space PS in which the substrate W is accommodated is formed between the cover 207 and the plate 205. The pressure sensor 210 detects the pressure in the processing space PS.
　カバー２０７には、ガス流路２１３が設けられる。ガス流路２１３は、カバー２０７の下面の中心部に開口端２１３ａを有する。開口端２１３ａは、プレート２０５上に載置される基板Ｗの中心部に対向する。ガス流路２１３には、ガス供給管２６１を介して、不活性ガス供給部Ｑ１および密着強化ガス供給部Ｑ２がそれぞれ接続される。不活性ガス供給部Ｑ１は、ガス供給管２６１およびガス流路２１３を通して処理空間ＰＳに不活性ガスを供給する。不活性ガスは、例えば窒素ガスである。密着強化ガス供給部Ｑ２は、ガス供給管２６１およびガス流路２１３を通して処理空間ＰＳに密着強化ガスを供給する。密着強化ガスは、密着強化剤を含む。密着強化剤は、例えばＨＭＤＳ（ヘキサメチルジシラザン）である。不活性ガス供給部Ｑ１および密着強化ガス供給部Ｑ２の各々は、例えばバルブを含み、バルブの開閉タイミングを制御することによって不活性ガスおよび密着強化ガスの供給タイミングを制御することができる。 The cover 207 is provided with a gas flow channel 213. The gas flow channel 213 has an open end 213 a at the center of the lower surface of the cover 207. The open end 213 a faces the central portion of the substrate W placed on the plate 205. An inert gas supply unit Q1 and a close contact gas supply unit Q2 are connected to the gas flow channel 213 via the gas supply pipe 261, respectively. The inert gas supply unit Q1 supplies the inert gas to the processing space PS through the gas supply pipe 261 and the gas flow channel 213. The inert gas is, for example, nitrogen gas. The adhesion enhancing gas supply unit Q2 supplies the adhesion enhancing gas to the processing space PS through the gas supply pipe 261 and the gas flow channel 213. The adhesion enhancing gas comprises an adhesion enhancing agent. The adhesion enhancer is, for example, HMDS (hexamethyldisilazane). Each of the inert gas supply unit Q1 and the adhesion enhancing gas supply unit Q2 includes, for example, a valve, and the supply timing of the inert gas and the adhesion enhancing gas can be controlled by controlling the opening / closing timing of the valve.
　プレート２０５を上下方向に貫通するように、複数（例えば３つ）の貫通孔２４５が設けられる。複数（例えば３つ）の支持ピン２４３は、それぞれプレート２０５の貫通孔２４５に挿入される。プレート２０５の下方において、各支持ピン２４３の下端部が、支持ピン昇降機構２４７に接続されている。支持ピン昇降機構２４７は、複数の支持ピン２４３を昇降させる。各支持ピン２４３の上端部には、円板上の封止部２４３ａが取り付けられている。プレート２０５の各貫通孔２４５の上端部には、封止部２４３ａを収容可能な凹部２４５ａが形成されている。封止部２４３ａの下面の周縁部が凹部２４５ａの底面と密着することにより、処理空間ＰＳの気密性が確保される。 A plurality of (for example, three) through holes 245 are provided so as to vertically penetrate the plate 205. A plurality of (for example, three) support pins 243 are respectively inserted into the through holes 245 of the plate 205. The lower end portion of each support pin 243 is connected to the support pin lifting mechanism 247 below the plate 205. The support pin raising and lowering mechanism 247 raises and lowers the plurality of support pins 243. A sealing portion 243 a on the disc is attached to the upper end portion of each support pin 243. At the upper end portion of each through hole 245 of the plate 205, a concave portion 245a capable of accommodating the sealing portion 243a is formed. When the peripheral portion of the lower surface of the sealing portion 243a is in close contact with the bottom surface of the recess 245a, the airtightness of the processing space PS is secured.
　プレート２０５の内部には、基板Ｗの温度を調整する温調部２４９が設けられている。温調部２４９は、例えばヒータである。温調部２４９は、プレート２０５の温度を調整することにより、プレート２０５に載置された基板Ｗに熱処理を施す。 Inside the plate 205, a temperature control unit 249 for adjusting the temperature of the substrate W is provided. The temperature control unit 249 is, for example, a heater. The temperature control unit 249 performs heat treatment on the substrate W placed on the plate 205 by adjusting the temperature of the plate 205.
　プレート２０５には、基板Ｗが載置される領域の外方で周方向に延びるように、排気スリット２５１が形成されている。また、排気スリット２５１にそれぞれ連通するように複数の排気ポート２５３が形成されている。複数の排気ポート２５３には、排気管２５５が接続されている。排気管２５５には、排気装置２５６が介挿される。排気装置２５６は、例えばポンプを含み、処理空間ＰＳから排気管２５５を通して気体を排出する。これにより、処理空間ＰＳが減圧される。本例では、排気装置２５６の動作状態を強状態と弱状態とに切替可能である。排気装置２５６を強状態で動作させることにより、排気装置２５６を弱状態で動作させる場合よりも処理空間ＰＳの圧力をより低く調整することができる。排気装置２５６として、圧縮気体による巻き込み作用によって処理空間ＰＳから気体を排出するエジェクタが用いられてもよい。 An exhaust slit 251 is formed on the plate 205 so as to extend in the circumferential direction outward of the region on which the substrate W is to be mounted. Further, a plurality of exhaust ports 253 are formed to communicate with the exhaust slits 251, respectively. An exhaust pipe 255 is connected to the plurality of exhaust ports 253. An exhaust device 256 is interposed in the exhaust pipe 255. The exhaust device 256 includes, for example, a pump, and exhausts the gas from the processing space PS through the exhaust pipe 255. Thereby, the processing space PS is decompressed. In this example, the operating state of the exhaust system 256 can be switched between the strong state and the weak state. By operating the exhaust system 256 in the strong state, the pressure of the processing space PS can be adjusted lower than in the case of operating the exhaust system 256 in the weak state. As the exhaust device 256, an ejector may be used which discharges the gas from the processing space PS by an entrainment action by the compressed gas.
　図２は、密着強化処理装置１００の制御系について説明するためのブロック図である。図２に示すように、密着強化処理装置１００は、制御部１５０を含む。制御部１５０は、ＣＰＵ（中央演算処理装置）、ＲＯＭ（リードオンリメモリ）、ＲＡＭ（ランダムアクセスメモリ）および記憶装置等を含む。 FIG. 2 is a block diagram for explaining a control system of the adhesion strengthening processing apparatus 100. As shown in FIG. As shown in FIG. 2, the adhesion strengthening processing apparatus 100 includes a control unit 150. Control unit 150 includes a CPU (central processing unit), a ROM (read only memory), a RAM (random access memory), a storage device, and the like.
　制御部１５０は、カバー昇降制御部５１、支持ピン昇降制御部５２、減圧制御部５３、不活性ガス供給制御部５４、密着強化ガス供給制御部５５、温調制御部５６および時間制御部５７を含む。これらの構成要素（５１～５７）の機能は、ＣＰＵがＲＯＭまたは記憶装置等の記憶媒体に記憶されたコンピュータプログラムを実行することにより実現される。圧力センサ２１０は、検出された圧力を表す値（以下、検出圧力値と呼ぶ）を減圧制御部５３および不活性ガス供給制御部５４に与える。 The control unit 150 includes a cover lift control unit 51, a support pin lift control unit 52, a pressure reduction control unit 53, an inert gas supply control unit 54, a close contact gas supply control unit 55, a temperature control control unit 56 and a time control unit 57. Including. The functions of these components (51 to 57) are realized by the CPU executing a computer program stored in a storage medium such as a ROM or a storage device. The pressure sensor 210 provides the pressure reduction control unit 53 and the inert gas supply control unit 54 with a value representing the detected pressure (hereinafter referred to as a detected pressure value).
　カバー昇降制御部５１は、カバー昇降機構２０９を制御することにより、図１のカバー２０７の昇降を制御する。支持ピン昇降制御部５２は、支持ピン昇降機構２４７を制御することにより、図１の複数の支持ピン２４３の昇降を制御する。減圧制御部５３は、排気装置２５６を制御することにより、処理空間ＰＳの排気を制御する。不活性ガス供給制御部５４は、不活性ガス供給部Ｑ１を制御することにより、処理空間ＰＳへの不活性ガスの供給を制御する。密着強化ガス供給制御部５５は、密着強化ガス供給部Ｑ２を制御することにより、処理空間ＰＳへの密着強化ガスの供給を制御する。温調制御部５６は、温調部２４９を制御することにより、基板Ｗの温調を調整する。時間制御部５７は、減圧制御部５３、不活性ガス供給制御部５４、密着強化ガス供給制御部５５および温調制御部５６の動作の開始および終了のタイミングを制御する。 The cover lift control unit 51 controls the cover lift mechanism 209 to control the lift of the cover 207 in FIG. 1. The support pin elevation control unit 52 controls the elevation of the plurality of support pins 243 in FIG. 1 by controlling the support pin elevation mechanism 247. The pressure reduction control unit 53 controls the exhaust device 256 to control the exhaust of the processing space PS. The inert gas supply control unit 54 controls the supply of the inert gas to the processing space PS by controlling the inert gas supply unit Q1. The adhesion strengthening gas supply control unit 55 controls the supply of the adhesion strengthening gas to the processing space PS by controlling the adhesion strengthening gas supply unit Q2. The temperature adjustment control unit 56 adjusts the temperature adjustment of the substrate W by controlling the temperature adjustment unit 249. The time control unit 57 controls the start and end timings of the operations of the pressure reduction control unit 53, the inert gas supply control unit 54, the close contact gas supply control unit 55, and the temperature control control unit 56.
　［２］動作
　図３は、密着強化処理装置１００における密着強化処理の概要を示すフローチャートである。まず、カバー昇降制御部５１がカバー２０７を上方位置に移動させる（ステップＳ１）。その状態で、図示しない搬送装置がプレート２０５の上方に基板Ｗを搬送する。次に、支持ピン昇降制御部５２が、複数の支持ピン２４３を上昇させる（ステップＳ２）。これにより、図示しない搬送装置から複数の支持ピン２４３に基板が渡される。次に、支持ピン昇降制御部５２が、複数の支持ピン２４３を下降させる（ステップＳ３）。これにより、複数のプロキシミティボール２４１上に基板Ｗが載置される。 [2] Operation FIG. 3 is a flowchart showing an outline of the adhesion strengthening processing in the adhesion strengthening processing apparatus 100. First, the cover lift control unit 51 moves the cover 207 to the upper position (step S1). In that state, a transfer device (not shown) transfers the substrate W above the plate 205. Next, the support pin elevation control unit 52 raises the plurality of support pins 243 (step S2). Thus, the substrate is transferred from the transfer device (not shown) to the plurality of support pins 243. Next, the support pin elevation control unit 52 lowers the plurality of support pins 243 (step S3). Thus, the substrate W is placed on the plurality of proximity balls 241.
　次に、カバー昇降制御部５１が、カバー２０７を下方位置に移動させる（ステップＳ４）。これにより、基板Ｗを収容する気密な処理空間ＰＳが形成される。次に、減圧制御部５３が、排気装置２５６の動作を開始させる（ステップＳ５）。この場合、減圧制御部５３は、排気装置２５６の動作状態を弱状態に設定する。また、温調制御部５６が、基板Ｗの温調を開始する（ステップＳ６）。次に、減圧制御部５３が、圧力センサ２１０からの検出圧力値が、予め定められた低真空値Ｐ１以下になったか否かを判定する（ステップＳ７）。減圧制御部５３は、検出圧力値が低真空値Ｐ１以下になるまでステップＳ７を繰り返す。検出圧力値が低真空値Ｐ１以下になると、減圧制御部５３は、排気装置２５６の動作状態を強状態に切り替える（ステップＳ８）。 Next, the cover lift control unit 51 moves the cover 207 to the lower position (step S4). Thereby, the airtight processing space PS which accommodates the board | substrate W is formed. Next, the pressure reduction control unit 53 starts the operation of the exhaust device 256 (step S5). In this case, the pressure reduction control unit 53 sets the operation state of the exhaust device 256 to a weak state. Further, the temperature control unit 56 starts temperature control of the substrate W (step S6). Next, the pressure reduction control unit 53 determines whether the detected pressure value from the pressure sensor 210 is equal to or less than a predetermined low vacuum value P1 (step S7). The pressure reduction control unit 53 repeats step S7 until the detected pressure value becomes equal to or less than the low vacuum value P1. When the detected pressure value becomes equal to or less than the low vacuum value P1, the pressure reduction control unit 53 switches the operating state of the exhaust device 256 to the strong state (step S8).
　次に、不活性ガス供給制御部５４は、圧力センサ２１０からの検出圧力値が、予め定められた高真空値Ｐ２以下になったか否かを判定する（ステップＳ９）。検出圧力値が高真空値Ｐ２以下になるまで、不活性ガス供給制御部５４はステップＳ９を繰り返す。検出圧力値が高真空値Ｐ２以下になると、不活性ガス供給制御部５４は、処理空間ＰＳへの不活性ガスの供給を開始する（ステップＳ１０）。 Next, the inert gas supply control unit 54 determines whether the detected pressure value from the pressure sensor 210 has become equal to or less than a predetermined high vacuum value P2 (step S9). The inert gas supply control unit 54 repeats step S9 until the detected pressure value becomes equal to or less than the high vacuum value P2. When the detected pressure value becomes equal to or less than the high vacuum value P2, the inert gas supply control unit 54 starts the supply of the inert gas to the processing space PS (step S10).
　ステップＳ１０で不活性ガスの供給が開始されてから予め定められた第１の供給時間が経過すると、不活性ガス供給制御部５４は、処理空間ＰＳへの不活性ガスの供給を停止する（ステップＳ１１）。同時に、密着強化ガス供給制御部５５が、処理空間ＰＳへの密着強化ガスの供給を開始する（ステップＳ１２）。これにより、処理空間ＰＳ内の不活性ガスが密着強化ガスで置換される。 When the supply of the inert gas is started in step S10 and a predetermined first supply time elapses, the inert gas supply control unit 54 stops the supply of the inert gas to the processing space PS (step S11). At the same time, the adhesion enhancing gas supply control unit 55 starts the supply of the adhesion enhancing gas to the processing space PS (step S12). Thus, the inert gas in the processing space PS is replaced with the adhesion enhancing gas.
　ステップＳ１２で密着強化ガスの供給が開始されてから予め定められた第２の供給時間が経過すると、密着強化ガス供給制御部５５が、処理空間ＰＳへの密着強化ガスの供給を停止する（ステップＳ１３）。また、減圧制御部５３が、排気装置２５６の動作状態を弱状態に切り替える（ステップＳ１４）。 When a predetermined second supply time has elapsed since the supply of the adhesion enhancing gas is started in step S12, the adhesion enhancing gas supply control unit 55 stops the supply of the adhesion enhancing gas to the processing space PS (step S12) S13). Further, the pressure reduction control unit 53 switches the operation state of the exhaust device 256 to the weak state (step S14).
　ステップＳ１４で排気装置２５６の動作状態が切り替えられてから予め定められた維持時間が経過すると、不活性ガス供給制御部５４が、処理空間ＰＳへの不活性ガスの供給を開始する（ステップＳ１５）。また、減圧制御部５３が、排気装置２５６の動作状態を強状態に切り替える（ステップＳ１６）。 After the operation state of the exhaust device 256 is switched in step S14 and a predetermined maintenance time has elapsed, the inert gas supply control unit 54 starts supply of inert gas to the processing space PS (step S15). . Further, the pressure reduction control unit 53 switches the operation state of the exhaust device 256 to the strong state (step S16).
　ステップＳ１６で排気装置２５６の動作状態が切り替えられてから予め定められた第３の供給時間が経過すると、減圧制御部５３が、排気装置２５６の動作状態を弱状態に切り替える（ステップＳ１７）。次に、減圧制御部５３は、圧力センサ２１０からの検出圧力値が、予め定められた低真空値Ｐ３以上になったか否かを判定する（ステップＳ１８）。低真空値Ｐ３は、上記の低真空値Ｐ１と近似する値であってかつ低真空値Ｐ１より僅かに低い。検出圧力値が低真空値Ｐ３以上になるまで、減圧制御部５３は、ステップＳ１８を繰り返す。検出圧力値が低真空値Ｐ３以上になると、減圧制御部５３は、排気装置２５６の動作を停止する（ステップＳ１９）。また、不活性ガス供給制御部５４が、処理空間ＰＳへの不活性ガスの供給を停止する（ステップＳ２０）。また、温調制御部５６が、基板Ｗの温調を停止する（ステップＳ２１）。 When the predetermined third supply time elapses after the operating state of the exhaust system 256 is switched in step S16, the decompression control unit 53 switches the operating state of the exhaust system 256 to the weak state (step S17). Next, the pressure reduction control unit 53 determines whether the detected pressure value from the pressure sensor 210 has become equal to or more than a predetermined low vacuum value P3 (step S18). The low vacuum value P3 is a value close to the low vacuum value P1 described above and slightly lower than the low vacuum value P1. The pressure reduction control unit 53 repeats step S18 until the detected pressure value becomes equal to or higher than the low vacuum value P3. When the detected pressure value becomes equal to or more than the low vacuum value P3, the pressure reduction control unit 53 stops the operation of the exhaust device 256 (step S19). Further, the inert gas supply control unit 54 stops the supply of the inert gas to the processing space PS (step S20). Further, the temperature control unit 56 stops the temperature control of the substrate W (step S21).
　処理空間ＰＳの圧力が大気圧と等しくなると、カバー昇降制御部５１がカバー２０７を上方位置に移動させる（ステップＳ２２）。また、支持ピン昇降制御部５２が、複数の支持ピン２４３を上昇させる（ステップＳ２３）。これにより、複数のプロキシミティボール２４１から複数の支持ピン２４３に基板Ｗが渡される。その状態で、図示しない搬送装置が、複数の支持ピン２４３から基板Ｗを受け取り、密着強化処理装置１００から基板Ｗを搬出する。これにより、密着強化処理装置１００の一連の動作が終了する。 When the pressure in the processing space PS becomes equal to the atmospheric pressure, the cover lift control unit 51 moves the cover 207 to the upper position (step S22). Further, the support pin elevation control unit 52 raises the plurality of support pins 243 (step S23). Thereby, the substrate W is passed from the plurality of proximity balls 241 to the plurality of support pins 243. In this state, a transfer device (not shown) receives the substrate W from the plurality of support pins 243, and carries the substrate W out of the adhesion strengthening processing apparatus 100. Thus, a series of operations of the adhesion strengthening processing apparatus 100 are completed.
　［３］処理空間の圧力の変化
　図４は、処理空間ＰＳの圧力の変化について説明するための図である。図４には、処理空間ＰＳの圧力の変化とともに、排気装置２５６の動作状態の変化、ならびに不活性ガスおよび密着強化ガスの供給タイミングが示される。図４において、横軸は時間を表し、縦軸は処理空間ＰＳの圧力ならびに不活性ガスおよび密着強化ガスの流量を表す。 [3] Change in Pressure of Processing Space FIG. 4 is a diagram for describing a change in pressure of the processing space PS. FIG. 4 shows the change in the operating state of the exhaust device 256 and the supply timing of the inert gas and the adhesion enhancing gas, along with the change in pressure in the processing space PS. In FIG. 4, the horizontal axis represents time, and the vertical axis represents the pressure of the processing space PS and the flow rates of the inert gas and the adhesion enhancing gas.
　図４の例において、時点ｔ１は、気密な処理空間ＰＳが形成された後であって、処理空間ＰＳの圧力が低真空値Ｐ１まで低下された時点である（図３のステップＳ７でＹｅｓ）。低真空値Ｐ１は、例えば、－４ｋＰａ以上－１ｋＰａ以下の範囲にある値であり、例えば－２ｋＰａである。時点ｔ１で排気装置２５６の動作状態が強状態に切り替えられる（図３のステップＳ８）。これにより、処理空間ＰＳの圧力がさらに低下し、時点ｔ２で処理空間ＰＳの圧力が高真空値Ｐ２になる（図３のステップＳ９でＹｅｓ）。高真空値Ｐ２は、第３の値の例である。高真空値Ｐ２は、例えば、－２５ｋＰａ以上－１８ｋＰａ以下の範囲にある値であり、例えば－２０ｋＰａである。 In the example of FIG. 4, time t1 is after the airtight processing space PS is formed and the pressure of the processing space PS is lowered to the low vacuum value P1 (Yes in step S7 of FIG. 3) . The low vacuum value P1 is, for example, a value in the range of -4 kPa or more and -1 kPa or less, and is, for example, -2 kPa. At time t1, the operating state of the exhaust system 256 is switched to the strong state (step S8 in FIG. 3). As a result, the pressure in the processing space PS further decreases, and the pressure in the processing space PS becomes the high vacuum value P2 at time t2 (Yes in step S9 in FIG. 3). The high vacuum value P2 is an example of a third value. The high vacuum value P2 is, for example, a value in the range of -25 kPa to -18 kPa, and is, for example, -20 kPa.
　時点ｔ２で処理空間ＰＳの圧力が高真空値Ｐ２になると、処理空間ＰＳへの不活性ガスの供給が開始される（図３のステップＳ１０）。この場合、不活性ガスの供給によって処理空間ＰＳの圧力が上昇する。排気装置２５６による排気量と不活性ガスの供給量とが均衡すると、処理空間ＰＳの圧力が中間値Ｐ４に収束する。中間値Ｐ４は、低真空値Ｐ１よりも低くかつ高真空値Ｐ２よりも高い。中間値Ｐ４は、第１の値の例である。中間値Ｐ４は、例えば、－１０ｋＰａ以上－５ｋＰａ以下の範囲にある値であり、例えば、－７ｋＰａである。 When the pressure of the processing space PS reaches the high vacuum value P2 at time t2, the supply of the inert gas to the processing space PS is started (step S10 in FIG. 3). In this case, the pressure of the processing space PS is increased by the supply of the inert gas. When the exhaust amount by the exhaust device 256 and the supply amount of the inert gas are balanced, the pressure of the processing space PS converges to the intermediate value P4. The intermediate value P4 is lower than the low vacuum value P1 and higher than the high vacuum value P2. The intermediate value P4 is an example of a first value. The intermediate value P4 is, for example, a value in the range of -10 kPa to -5 kPa, and is, for example, -7 kPa.
　時点ｔ３で不活性ガスの供給が停止されるとともに密着強化ガスの供給が開始される（図３のステップＳ１１，Ｓ１２）。本例において、密着強化ガスの流量は、不活性ガスの流量より小さい。そのため、処理空間ＰＳの圧力が中間値Ｐ４から低下する。排気装置２５６による排気量と密着強化ガスの供給量とが均衡すると、処理空間ＰＳの圧力が中間値Ｐ５に収束する。中間値Ｐ５は、高真空値Ｐ２よりも高くかつ中間値Ｐ４よりも低い。中間値Ｐ５は、第２の値の例である。中間値Ｐ５は、例えば、－２０ｋＰａ以上－１０ｋＰａ以下の範囲にある値であり、例えば、－１５ｋＰａである。 At time t3, the supply of the inert gas is stopped and the supply of the adhesion strengthening gas is started (steps S11 and S12 in FIG. 3). In the present example, the flow rate of the adhesion strengthening gas is smaller than the flow rate of the inert gas. Therefore, the pressure in the processing space PS drops from the intermediate value P4. When the exhaust amount by the exhaust device 256 and the supply amount of the adhesion enhancing gas are balanced, the pressure of the processing space PS converges to the intermediate value P5. Intermediate value P5 is higher than high vacuum value P2 and lower than intermediate value P4. The intermediate value P5 is an example of a second value. The intermediate value P5 is, for example, a value in the range of -20 kPa or more and -10 kPa or less, and is, for example, -15 kPa.
　時点ｔ４で密着強化ガスの供給が停止されるとともに排気装置２５６の動作状態が弱状態に切り替えられる（図３のステップＳ１３，Ｓ１４）。この場合、処理空間ＰＳが密着強化ガスで満たされた状態で処理空間ＰＳの圧力は中間値Ｐ５に維持される。時点ｔ３から時点ｔ４までの期間に、基板Ｗの被処理面に密着強化剤が塗布される。これにより、基板Ｗの被処理面の疎水性が高まる。後の工程で、基板Ｗの被処理面に処理膜（例えばレジスト膜）が形成される。密着強化剤の塗布により、基板Ｗの被処理面と処理膜との密着性が確保される。 At time t4, the supply of the intensified gas is stopped, and the operating state of the exhaust device 256 is switched to the weak state (steps S13 and S14 in FIG. 3). In this case, the pressure of the processing space PS is maintained at the intermediate value P5 while the processing space PS is filled with the adhesion enhancing gas. The adhesion enhancer is applied to the surface to be processed of the substrate W in a period from time t3 to time t4. Thereby, the hydrophobicity of the treated surface of the substrate W is enhanced. A treatment film (for example, a resist film) is formed on the surface to be treated of the substrate W in a later step. The adhesion between the surface to be treated of the substrate W and the treatment film is secured by the application of the adhesion enhancer.
　時点ｔ５で不活性ガスの供給が開始されるとともに排気装置２５６の動作状態が強状態に切り替えられる（図３のステップＳ１５，Ｓ１６）。これにより、処理空間ＰＳの圧力が再度上昇し、中間値Ｐ４に収束する。本例では、時点ｔ５から時点ｔ７までの期間における不活性ガスの流量が、時点ｔ２から時点ｔ３までの期間における不活性ガスの流量と等しいが、時点ｔ５から時点ｔ７までの期間における不活性ガスの流量が、時点ｔ３から時点ｔ４までの期間における不活性ガスの流量と異なっていてもよい。 At time t5, the supply of the inert gas is started and the operating state of the exhaust device 256 is switched to the strong state (steps S15 and S16 in FIG. 3). As a result, the pressure in the processing space PS rises again and converges to the intermediate value P4. In this example, the flow rate of the inert gas in the period from time t5 to time t7 is equal to the flow rate of the inert gas in the period from time t2 to time t3, but the inert gas in the period from time t5 to time t7 May be different from the flow rate of the inert gas in the period from time t3 to time t4.
　時点ｔ６で排気装置２５６の動作状態が弱状態に切り替えられる（図３のステップＳ１７）。これにより、処理空間ＰＳの圧力がさらに上昇する。時点ｔ７で処理空間ＰＳの圧力が低真空値Ｐ３に達すると、排気装置２５６の動作が停止されるとともに（図３のステップＳ１９）、不活性ガスの供給が停止される（図３のステップＳ２０）。 At time t6, the operating state of the exhaust device 256 is switched to the weak state (step S17 in FIG. 3). As a result, the pressure in the processing space PS further increases. When the pressure in the processing space PS reaches the low vacuum value P3 at time t7, the operation of the exhaust device 256 is stopped (step S19 in FIG. 3) and the supply of inert gas is stopped (step S20 in FIG. 3). ).
　このように、本実施の形態では、処理空間ＰＳの圧力が高真空値Ｐ２まで低下された後、処理空間ＰＳに不活性ガスが供給されることによって処理空間ＰＳの圧力が中間値Ｐ４まで上昇する。その状態で、不活性ガスの供給が停止されるとともに密着強化ガスの供給が開始されることにより、処理空間ＰＳの圧力が中間値Ｐ４から中間値Ｐ５まで低下する。 As described above, in the present embodiment, after the pressure of the processing space PS is reduced to the high vacuum value P2, the pressure of the processing space PS is increased to the intermediate value P4 by supplying the inert gas to the processing space PS. Do. In this state, the supply of the inert gas is stopped and the supply of the intensified gas is started, so that the pressure of the processing space PS decreases from the intermediate value P4 to the intermediate value P5.
　図５は、本発明の比較例について説明するための図である。図５には、図４と同様に、処理空間ＰＳの圧力の変化とともに、排気装置２５６の動作状態の変化、ならびに不活性ガスおよび密着強化ガスの供給タイミングが示される。 FIG. 5 is a view for explaining a comparative example of the present invention. Similar to FIG. 4, FIG. 5 shows changes in the operating state of the exhaust device 256 and supply timings of the inert gas and the adhesion enhancing gas with changes in the pressure of the processing space PS.
　図５の比較例が図４の例と異なる点は、密着強化ガスの供給前に不活性ガスが供給されない点である。具体的には、時点ｔ１１は、図４の時点ｔ１と同様に、気密な処理空間ＰＳが形成された後であって、処理空間ＰＳの圧力が低真空値Ｐ１まで低下された時点である。時点ｔ１１から時点ｔ１２までの期間に処理空間ＰＳの圧力が低真空値Ｐ１から高真空値Ｐ２まで低下される。時点ｔ１２から時点ｔ１３まで処理空間ＰＳに密着強化ガスが供給され、時点ｔ１３から時点ｔ１４まで処理空間ＰＳの圧力が中間値Ｐ５に維持される。時点ｔ１４から時点ｔ１５まで処理空間ＰＳに不活性ガスが供給され、時点ｔ１５から時点１６までの期間に処理空間ＰＳの圧力が中間値Ｐ４から低真空値Ｐ３まで上昇する。 The comparative example of FIG. 5 differs from the example of FIG. 4 in that the inert gas is not supplied before the supply of the adhesion strengthening gas. Specifically, the time point t11 is a time point after the pressure of the processing space PS is reduced to the low vacuum value P1 after the airtight processing space PS is formed as in the time t1 of FIG. 4. The pressure of the processing space PS is reduced from the low vacuum value P1 to the high vacuum value P2 in a period from time point t11 to time point t12. The adhesion enhancing gas is supplied to the processing space PS from time t12 to time t13, and the pressure of the processing space PS is maintained at the intermediate value P5 from time t13 to time t14. The inert gas is supplied to the processing space PS from time t14 to time t15, and the pressure of the processing space PS rises from the intermediate value P4 to the low vacuum value P3 in the period from time t15 to time 16.
　図５の比較例では、処理空間ＰＳの圧力が高真空値Ｐ２である状態で、密着強化ガスの供給が開始される。この場合、処理空間ＰＳに導入された密着強化ガスが、図１の基板Ｗの中心部の上方に位置するガス流路２１３から基板Ｗの外方に位置する排気スリット２５１に向かって高速で移動する。そのため、密着強化ガスが基板Ｗの周縁部に集中的に接触しやすい。これにより、基板Ｗの中心部における単位面積当たりの密着強化剤の塗布量より、基板Ｗの周縁部における単位面積当たりの密着強化剤の塗布量が大きくなる。これにより、基板Ｗの被処理面の疎水性にばらつきが生じる。 In the comparative example of FIG. 5, the supply of the adhesion strengthening gas is started in a state where the pressure of the processing space PS is the high vacuum value P2. In this case, the adhesion strengthening gas introduced into the processing space PS moves at high speed from the gas flow channel 213 located above the central portion of the substrate W in FIG. 1 toward the exhaust slit 251 located outside the substrate W. Do. Therefore, the adhesion strengthening gas is likely to contact the peripheral portion of the substrate W intensively. As a result, the coating amount of the adhesion enhancer per unit area in the peripheral portion of the substrate W becomes larger than the application amount of the adhesion enhancer per unit area in the central portion of the substrate W. Thereby, the hydrophobicity of the treated surface of the substrate W varies.
　また、処理空間ＰＳの圧力が低い状態で密着強化ガスの供給が開始されると、処理空間ＰＳの圧力にばらつきが生じやすい。そのため、処理空間ＰＳにおける密着強化ガスの流れが安定せず、基板Ｗへの密着強化剤の塗布量を制御することが困難となる。 In addition, when the supply of the intensified gas is started in a state where the pressure in the processing space PS is low, the pressure in the processing space PS is likely to vary. Therefore, the flow of the adhesion strengthening gas in the processing space PS is not stable, and it becomes difficult to control the amount of the adhesion strengthening agent applied to the substrate W.
　それに対して、本実施の形態では、処理空間ＰＳの圧力が比較的高い中間値Ｐ４に調整された状態で、密着強化ガスの供給が開始される。それにより、処理空間ＰＳにおける密着強化ガスの流速の上昇が抑制される。これにより、密着強化ガスがガス流路２１３の開口端２１３ａから処理空間ＰＳの全体に緩やかに拡がる。そのため、密着強化ガスが基板Ｗの被処理面の全体に均一に接触する。したがって、基板Ｗの被処理面の全体に均一に密着強化剤を塗布することができる。これにより、基板Ｗの被処理面の疎水性を均一に調整することができる。 On the other hand, in the present embodiment, the supply of the adhesion enhancing gas is started in a state where the pressure of the processing space PS is adjusted to a relatively high intermediate value P4. As a result, the increase in the flow velocity of the adhesion enhancing gas in the processing space PS is suppressed. As a result, the adhesion strengthening gas is gradually spread from the opening end 213a of the gas flow channel 213 to the entire processing space PS. Therefore, the adhesion strengthening gas uniformly contacts the entire treated surface of the substrate W. Therefore, the adhesion enhancer can be uniformly applied to the entire treated surface of the substrate W. Thereby, the hydrophobicity of the to-be-processed surface of the board | substrate W can be adjusted uniformly.
　また、密着強化ガスの供給時における処理空間ＰＳの圧力のばらつきが抑制される。それにより、密着強化ガスの流動が安定し、基板Ｗへの密着強化剤の塗布量を適切に制御することができる。 Further, variation in pressure of the processing space PS at the time of supply of the intensified gas is suppressed. As a result, the flow of the adhesion enhancing gas is stabilized, and the amount of the adhesion enhancing agent applied to the substrate W can be appropriately controlled.
　また、本実施の形態では、処理空間ＰＳの圧力が高真空値Ｐ２まで低下された後に処理空間ＰＳに不活性ガスが供給される。この場合、処理空間ＰＳに残留する液体等の不純物が効率良く除去される。それにより、密着強化ガスの供給時に、不活性ガスを密着強化ガスで迅速に置換することができる。また、密着強化ガスに不純物が混入することが防止されるので、密着強化処理装置１００による基板Ｗの処理精度がより高くなる。 Further, in the present embodiment, the inert gas is supplied to the processing space PS after the pressure in the processing space PS is reduced to the high vacuum value P2. In this case, impurities such as liquid remaining in the processing space PS are efficiently removed. Thereby, the inert gas can be quickly replaced with the adhesion enhancing gas at the time of supply of the adhesion enhancing gas. In addition, since the impurity is prevented from mixing into the adhesion strengthening gas, the processing accuracy of the substrate W by the adhesion strengthening processing apparatus 100 is further enhanced.
　また、本実施の形態では、不活性ガスの流量より密着強化ガスの流量が小さく、不活性ガスの供給時における処理空間ＰＳの圧力（中間値Ｐ４）より密着強化ガスの供給時における処理空間ＰＳの圧力（中間値Ｐ５）が低い。これにより、密着強化ガスの使用量を低減することができる。また、密着強化ガスの流速の上昇をより確実に抑制することができるので、基板Ｗの被処理面の全体に対する密着強化剤の塗布の均一性をより高めることができる。 Further, in the present embodiment, the flow rate of the adhesion strengthening gas is smaller than the flow rate of the inert gas, and the pressure of the processing space PS at the time of supply of the inert gas (intermediate value P4) Pressure (intermediate value P5) is low. Thereby, the usage-amount of close_contact | adherence strengthening gas can be reduced. In addition, since the increase in the flow velocity of the adhesion enhancing gas can be more reliably suppressed, the uniformity of the application of the adhesion enhancing agent to the entire treated surface of the substrate W can be further enhanced.
　［４］他の実施の形態
　上記実施の形態では、排気装置２５６によって処理空間ＰＳの圧力が高真空値Ｐ２まで低下された後に不活性ガスの供給が開始されるが、本発明はこれに限らない。例えば、図４の時点ｔ１で排気装置２５６の動作状態が強状態に切り替えられるとともに不活性ガスの供給が開始されてもよい。この場合、処理空間ＰＳの圧力が低真空値Ｐ１から中間値Ｐ４に低下する。 [4] Other Embodiments In the above embodiment, the supply of the inert gas is started after the pressure of the processing space PS is reduced to the high vacuum value P2 by the exhaust device 256, but the present invention is limited thereto Absent. For example, at time t1 in FIG. 4, the operating state of the exhaust device 256 may be switched to the strong state and the supply of the inert gas may be started. In this case, the pressure in the processing space PS drops from the low vacuum value P1 to the intermediate value P4.
　上記実施の形態では、処理空間ＰＳの圧力が中間値Ｐ４となるように不活性ガスが供給され、処理空間ＰＳの圧力が中間値Ｐ４より低い中間値Ｐ５となるように密着強化ガスが供給されるが、本発明はこれに限らない。例えば、不活性ガスの供給時における処理空間ＰＳの圧力と密着強化ガスの供給時における処理空間ＰＳの圧力とが等しくなるように、不活性ガスおよび密着強化ガスの流量が設定されてもよい。また、不活性ガスの供給時における処理空間ＰＳの圧力より密着強化ガスの供給時における処理空間ＰＳの圧力が高くなるように、不活性ガスおよび密着強化ガスの流量が設定されてもよい。 In the above embodiment, the inert gas is supplied such that the pressure of the processing space PS becomes the intermediate value P4, and the adhesion strengthening gas is supplied such that the pressure of the processing space PS becomes the intermediate value P5 lower than the intermediate value P4. However, the present invention is not limited to this. For example, the flow rates of the inert gas and the adhesion enhancing gas may be set such that the pressure of the processing space PS at the time of supplying the inert gas and the pressure of the processing space PS at the time of supplying the adhesion enhancing gas are equal. In addition, the flow rates of the inert gas and the adhesion enhancing gas may be set such that the pressure of the processing space PS at the time of supply of the adhesion enhancing gas is higher than the pressure of the processing space PS at the time of supplying the inert gas.
　上記実施の形態では、排気装置２５６の動作状態が、不活性ガスの供給前（図４の時点ｔ１から時点ｔ２までの期間）、不活性ガスの供給時（図４の時点ｔ２から時点ｔ３までの期間）、および密着強化ガスの供給時（図４の時点ｔ３から時点ｔ４までの期間）において一定に維持されるが、これらの期間に排気装置２５６の動作状態が切り替えられてもよい。例えば、不活性ガスの供給時および密着強化ガスの供給時の少なくとも一方で排気装置２５６の動作状態が弱状態に切り替えられてもよい。あるいは、排気装置２５６の動作状態が、３段階以上に切り替え可能であってもよい。 In the above embodiment, the operating state of the exhaust device 256 is before supply of the inert gas (period from time t1 to time t2 in FIG. 4) and at time of supply of inert gas (time t2 to time t3 in FIG. 4). 4 and the supply of the adhesion strengthening gas (the period from time t3 to time t4 in FIG. 4), the operating state of the exhaust device 256 may be switched during these periods. For example, the operating state of the exhaust device 256 may be switched to the weak state at least one of the supply of the inert gas and the supply of the adhesion strengthening gas. Alternatively, the operating state of the exhaust device 256 may be switchable to three or more stages.
　上記実施の形態では、有機材料としてＨＭＤＳからなる密着強化剤が用いられるが、基板Ｗの疎水性を高めることが可能であれば、ＴＭＳＤＭＡ（トリメチルシリルジメチルアミン）等の他の有機材料からなる密着強化剤が用いられてもよい。また、上記実施の形態では、不活性ガスとして窒素ガスが用いられるが、密着強化剤に影響を与えない他の不活性ガスが用いられてもよい。 In the above embodiment, the adhesion enhancing agent made of HMDS is used as the organic material, but if the hydrophobicity of the substrate W can be enhanced, the adhesion enhancing made of another organic material such as TMSDMA (trimethylsilyldimethylamine) Agents may be used. Further, in the above embodiment, nitrogen gas is used as the inert gas, but other inert gas that does not affect the adhesion enhancer may be used.
　［５］請求項の各構成要素と実施の形態の各要素との対応関係
　以下、請求項の各構成要素と実施の形態の各要素との対応の例について説明するが、本発明は下記の例に限定されない。 [5] Correspondence Between Each Component of the Claim and Each Element of the Embodiment Hereinafter, an example of the correspondence between each component of the claim and each element of the embodiment will be described. It is not limited to the example.
　上記の実施の形態では、密着強化処理装置１００が密着強化処理装置の例であり、チャンバ２０１がチャンバの例であり、処理空間ＰＳが処理空間の例であり、排気装置２５６が減圧部の例であり、不活性ガス供給部Ｑ１が不活性ガス供給部の例であり、密着強化ガス供給部Ｑ２が密着強化ガス供給部の例であり、中間値Ｐ４が第１の値の例であり、中間値Ｐ５が第２の値の例であり、高真空値Ｐ２が第３の値の例である。 In the above embodiment, the adhesion strengthening processing apparatus 100 is an example of the adhesion strengthening processing apparatus, the chamber 201 is an example of a chamber, the processing space PS is an example of a processing space, and the exhaust device 256 is an example of a pressure reducing unit. The inert gas supply unit Q1 is an example of the inert gas supply unit, the adhesion strengthening gas supply unit Q2 is an example of the adhesion strengthening gas supply unit, and the intermediate value P4 is an example of the first value, The intermediate value P5 is an example of a second value, and the high vacuum value P2 is an example of a third value.
　請求項の各構成要素として、請求項に記載されている構成または機能を有する他の種々の要素を用いることもできる。 As each component of a claim, other various elements having the configuration or function described in the claim can also be used.

Claims (10)

  1. 基板が収容される処理空間を形成するチャンバと、
    　前記処理空間から気体を排出することにより前記処理空間の圧力を低下させる減圧部と、
    　前記処理空間の圧力が大気圧よりも低い第１の値となるように、前記減圧部により気体が排出されている状態で前記処理空間に不活性ガスを供給する不活性ガス供給部と、
    　前記不活性ガス供給部により前記処理空間に不活性ガスが供給された後に、前記処理空間の圧力が大気圧よりも低い第２の値となるように、前記減圧部により気体が排出されている状態で前記処理空間に密着強化剤を含む密着強化ガスを供給する密着強化ガス供給部とを備える、密着強化処理装置。     A chamber forming a processing space in which the substrate is accommodated;
    A pressure reduction unit that reduces the pressure of the processing space by discharging a gas from the processing space;
    An inert gas supply unit for supplying an inert gas to the processing space while the gas is being discharged by the depressurizing unit such that the pressure in the processing space is a first value lower than atmospheric pressure;
    After the inert gas is supplied to the processing space by the inert gas supply unit, a gas is discharged by the pressure reducing unit such that the pressure of the processing space becomes a second value lower than the atmospheric pressure. An adhesion strengthening processing device comprising: an adhesion strengthening gas supply unit that supplies an adhesion strengthening gas containing an adhesion strengthening agent to the processing space in a state.
  2. 前記密着強化ガス供給部は、前記不活性ガス供給部による前記処理空間への不活性ガスの供給が停止された時点で前記処理空間への密着強化ガスの供給を開始する、請求項１記載の密着強化処理装置。 The adhesion enhancement gas supply unit starts supply of the adhesion enhancement gas to the processing space when supply of the inert gas to the processing space by the inert gas supply unit is stopped. Adhesion strengthening processing device.
  3. 前記不活性ガス供給部は、不活性ガスを第１の流量で前記処理空間に供給し、
    　前記密着強化ガス供給部は、密着強化ガスを前記第１の流量よりも小さい第２の流量で前記処理空間に供給する、請求項１または２記載の密着強化処理装置。     The inert gas supply unit supplies an inert gas to the processing space at a first flow rate,
    The adhesion reinforcement processing apparatus according to claim 1, wherein the adhesion reinforcement gas supply unit supplies the adhesion reinforcement gas to the processing space at a second flow rate smaller than the first flow rate.
  4. 前記減圧部は、前記処理空間の圧力を前記第１の値よりも低くかつ前記第２の値よりも低い第３の値に低下させ、
    　前記不活性ガス供給部は、前記減圧部により前記処理空間の圧力が前記第３の値に低下した後に前記処理空間の圧力が前記第３の値から前記第１の値に上昇するように前記処理空間に不活性ガスを供給する、請求項１～３のいずれか一項に記載の密着強化処理装置。     The pressure reducing unit reduces the pressure of the processing space to a third value lower than the first value and lower than the second value.
    The inert gas supply unit is configured to increase the pressure in the processing space from the third value to the first value after the pressure in the processing space is reduced to the third value by the pressure reducing unit. The adhesion strengthening processing apparatus according to any one of claims 1 to 3, wherein an inert gas is supplied to the processing space.
  5. 前記第２の値は前記第１の値よりも低く、
    　前記密着強化ガス供給部は、前記処理空間の圧力が前記第１の値から前記第２の値に低下するように前記処理空間に密着強化ガスを供給する、請求項４記載の密着強化処理装置。     The second value is lower than the first value,
    The adhesion reinforcing processing apparatus according to claim 4, wherein the adhesion reinforcing gas supply unit supplies the adhesion reinforcing gas to the processing space such that the pressure of the processing space is reduced from the first value to the second value. .
  6. チャンバが形成する処理空間に基板を収容するステップと、
    　前記処理空間の圧力が大気圧よりも低い第１の値となるように、前記処理空間から気体を排出しつつ前記処理空間に不活性ガスを供給するステップと、
    　前記不活性ガスを供給するステップの後に、前記処理空間の圧力が大気圧よりも低い第２の値となるように、前記処理空間から気体を排出しつつ前記処理空間に密着強化剤を含む密着強化ガスを供給するステップとを含む、密着強化処理方法。     Housing the substrate in a processing space formed by the chamber;
    Supplying an inert gas to the processing space while exhausting a gas from the processing space such that the pressure of the processing space is a first value lower than atmospheric pressure;
    An adhesion including an adhesion enhancer in the processing space while discharging the gas from the processing space so that the pressure of the processing space becomes a second value lower than the atmospheric pressure after the step of supplying the inert gas. And c. Supplying a strengthening gas.
  7. 前記密着強化ガスを供給するステップは、前記処理空間への不活性ガスの供給が停止された時点で前記処理空間への密着強化ガスの供給を開始することを含む、請求項６記載の密着強化処理方法。 The adhesion enhancing method according to claim 6, wherein the step of supplying the adhesion enhancing gas includes starting the supply of the adhesion enhancing gas to the processing space when the supply of the inert gas to the processing space is stopped. Processing method.
  8. 前記不活性ガスを供給するステップは、不活性ガスを第１の流量で前記処理空間に供給することを含み、
    　前記密着強化ガスを供給するステップは、密着強化ガスを前記第１の流量よりも小さい第２の流量で前記処理空間に供給することを含む、請求項６または７記載の密着強化処理方法。     The step of supplying the inert gas includes supplying the inert gas to the processing space at a first flow rate,
    The adhesion strengthening processing method according to claim 6, wherein the step of supplying the adhesion strengthening gas includes supplying the adhesion strengthening gas to the processing space at a second flow rate smaller than the first flow rate.
  9. 前記不活性ガスを供給するステップの前に、前記処理空間の圧力を前記第１の値よりも低くかつ前記第２の値よりも低い第３の値に低下させるステップをさらに含み、
    　前記不活性ガスを供給するステップは、前記処理空間の圧力が前記第３の値から前記第１の値に上昇するように前記処理空間に不活性ガスを供給することを含む、請求項６～８のいずれか一項に記載の密着強化処理方法。     The method further includes the step of reducing the pressure of the processing space to a third value lower than the first value and lower than the second value prior to the step of supplying the inert gas.
    The step of supplying the inert gas may include supplying the inert gas to the processing space such that the pressure of the processing space is increased from the third value to the first value. The adhesion strengthening treatment method according to any one of 8.
  10. 前記第２の値は前記第１の値よりも低く、
    　前記密着強化ガスを供給するステップは、前記処理空間の圧力が前記第１の値から前記第２の値に低下するように前記処理空間に密着強化ガスを供給することを含む、請求項９記載の密着強化処理方法。     The second value is lower than the first value,
    10. The method according to claim 9, wherein the step of supplying the intensifying gas includes supplying the intensifying gas to the processing space such that the pressure in the processing space is reduced from the first value to the second value. Adhesion strengthening treatment method.
PCT/JP2018/028338 2017-08-31 2018-07-27 Adhesion strengthening treatment apparatus and adhesion strengthening treatment method WO2019044315A1 (en)

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