TWI690011B - Adhesion reinforcement processing device and adhesion reinforcement processing method - Google Patents

Abstract

The adhesion strengthening treatment device of the present invention includes a chamber, a decompression portion, an inert gas supply portion, and an adhesion strengthening gas supply portion. The chamber forms a processing space for receiving substrates. The depressurizing section reduces the pressure of the processing space by discharging gas from the processing space. The inert gas supply unit supplies the inert gas to the processing space in a state where the gas is discharged through the decompression unit so that the pressure of the processing space becomes the first value lower than atmospheric pressure. After the inert gas supply part supplies the inert gas to the processing space through the inert gas supply part, the pressure in the processing space becomes the second value lower than atmospheric pressure, and the gas is discharged through the decompression part The treatment space is supplied with an adhesion strengthening gas containing an adhesion strengthening agent.

Description

Adhesion enhancement processing device and adhesion enhancement processing method

The invention relates to an adhesion enhancement processing device and an adhesion enhancement processing method for performing adhesion enhancement processing on a substrate.

In a lithography process in the manufacture of semiconductor devices and the like, a resist pattern is formed by forming a resist film on the processed surface of the substrate and then performing an exposure process and a development process. Generally, in order to improve the adhesion between the processed surface of the substrate and the resist film, HMDS (hexamethyldisilazane, hexamethyldisilazane), etc. is applied to the processed surface of the substrate before the formation of the resist film With enhancers.

In the adhesion strengthening device described in Patent Document 1, the chamber space is formed by the chamber body and the sealing cover. In a state where the substrate is accommodated in the chamber space, the chamber space is evacuated. If the pressure in the chamber space drops to a specific vacuum pressure, HMDS is supplied to the chamber space through the supply line provided in the closed cover.

[Patent Document 1] Japanese Patent Laid-Open No. 2005-93952

[Problems to be Solved by the Invention] If the adhesion enhancer is supplied to the decompressed chamber space as described above, the flow rate of the adhesion enhancer in the chamber space becomes higher. In this case, there is a case where the adhesion strengthening agent is concentratedly applied to a part of the processed surface of the substrate.

An object of the present invention is to provide an adhesion strengthening treatment device and an adhesion strengthening treatment method that can uniformly apply an adhesion strengthening agent to a surface to be processed of a substrate.

[Technical Means for Solving the Problem] (1) An adhesion enhancement processing apparatus according to an aspect of the present invention includes: a chamber that forms a processing space for accommodating a substrate; and a decompression section that performs processing by exhausting gas from the processing space The pressure of the space decreases; the inert gas supply unit supplies the inert gas to the processing space in a state where the pressure of the processing space becomes lower than the first value of atmospheric pressure in a state where the gas is discharged through the decompression unit; and The gas supply part, after supplying the inert gas to the processing space by the inert gas supply part, treats the process in a state where the gas is discharged by the decompression part so that the pressure of the processing space becomes the second value lower than atmospheric pressure The space supplies an adhesion strengthening gas containing an adhesion strengthening agent.

In this adhesion strengthening treatment device, the gas is discharged from the treatment space while the inert gas is supplied to the treatment space, so the pressure drop in the treatment space is suppressed. Since the dense strengthening gas is supplied to the processing space in this state, the increase in the flow velocity of the dense strengthening gas in the processing space is suppressed, and the dense strengthening gas is slowly diffused in the processing space. With this, it is possible to prevent the densely-strengthened gas from concentrating on a part of the processed surface of the substrate. As a result, the adhesion strengthening agent can be uniformly applied to the entire surface of the substrate to be processed.

(2) The adhesion strengthening gas supply unit may start supplying the adhesion strengthening gas to the processing space when the supply of the inert gas from the inert gas supply unit to the processing space is stopped.

In this case, the decrease in the concentration of the dense strengthening gas in the processing space is suppressed. This makes it possible to accurately control the amount of the adhesion enhancer applied to the processed surface of the substrate.

(3) The inert gas supply unit may supply the inert gas to the processing space at a first flow rate, and the adhesion strengthening gas supply unit may supply the adhesion strengthening gas to the processing space at a second flow rate less than the first flow rate.

In this case, it is possible to uniformly apply the adhesion strengthening agent to the entire treated surface of the substrate while reducing the amount of adhesion strengthening gas used.

(4) It may be that the decompression portion reduces the pressure of the processing space to a third value lower than the first value and lower than the second value, and the inert gas supply portion reduces the pressure of the processing space to After the third value, an inert gas is supplied to the processing space so that the pressure of the processing space rises from the third value to the first value.

In this case, by supplying an inert gas after the pressure in the processing space has sufficiently decreased, impurities such as liquid remaining in the processing space are efficiently removed. Thereby, when the adhesion strengthening gas is supplied, the inert gas can be quickly replaced by the adhesion strengthening gas. In addition, since impurities can be prevented from being mixed into the dense strengthening gas, the processing accuracy of the substrate becomes higher.

(5) The second value may be lower than the first value, and the adhesion strengthening gas supply unit may supply the adhesion strengthening gas to the processing space so that the pressure of the processing space decreases from the first value to the second value.

In this case, it is possible to uniformly apply the adhesion strengthening agent to the entire surface of the substrate to be treated while reducing the amount of adhesion strengthening gas used.

(6) Another aspect of the adhesion strengthening treatment method of the present invention includes the following steps: accommodating the substrate in the processing space formed by the chamber; in such a way that the pressure of the processing space becomes the first value lower than atmospheric pressure, one side To discharge gas from the treatment space, supply inert gas to the treatment space; after the step of supplying inert gas, discharge the gas from the treatment space while the pressure of the treatment space becomes the second value lower than atmospheric pressure The treatment space is supplied with an adhesion strengthening gas containing an adhesion strengthening agent.

According to this method, since the gas is discharged from the processing space and the inert gas is supplied to the processing space, the pressure drop in the processing space is suppressed. In this state, the dense strengthening gas is supplied to the processing space, so the increase in the flow velocity of the dense strengthening gas in the processing space is suppressed, and the dense strengthening gas is slowly diffused in the processing space. With this, it is possible to prevent the densely-strengthened gas from concentrating on a part of the processed surface of the substrate. As a result, the adhesion enhancer can be uniformly applied to the entire surface of the substrate to be processed.

(7) The step of supplying the dense strengthening gas may include starting the supply of the dense strengthening gas to the processing space at the time when the supply of the inert gas to the processing space is stopped.

In this case, the decrease in the concentration of the dense strengthening gas in the processing space is suppressed. This makes it possible to accurately control the amount of the adhesion enhancer applied to the processed surface of the substrate.

(8) It may also be that the step of supplying the inert gas includes supplying the inert gas to the processing space at a first flow rate, and the step of supplying the dense strengthening gas includes supplying the dense strengthening gas at a second flow rate less than the first flow rate to Processing space.

In this case, the amount of adhesion strengthening gas can be reduced, and the adhesion strengthening agent can be uniformly applied to the entire surface of the substrate to be treated.

(9) The adhesion strengthening treatment method may further include a step of reducing the pressure of the processing space to a third value lower than the first value and lower than the second value before the step of supplying the inert gas, and supplying inertness The gas step includes supplying an inert gas to the processing space so that the pressure of the processing space increases from the third value to the first value.

In this case, by supplying an inert gas after the pressure in the processing space has sufficiently decreased, impurities such as liquid remaining in the processing space are efficiently removed. Thereby, the inert gas can be quickly replaced by the dense strengthening gas when the dense strengthening gas is supplied. In addition, since impurities can be prevented from being mixed into the dense strengthening gas, the processing accuracy of the substrate becomes higher.

(10) The second value may be lower than the first value, and the step of supplying the dense strengthening gas may include supplying the dense strengthening gas to the processing space so that the pressure of the processing space decreases from the first value to the second value.

In this case, it is possible to uniformly apply the adhesion strengthening agent to the entire surface of the substrate to be treated while reducing the amount of adhesion strengthening gas used.

[Effect of the Invention] According to the present invention, the adhesion strengthening agent can be uniformly applied to the surface to be treated of the substrate.

Hereinafter, with reference to the drawings, an adhesion enhancement processing device and an adhesion enhancement processing method according to an embodiment of the present invention will be described. In addition, in the following description, the substrate refers to a substrate for FPD (Flat Panel Display), a substrate for optical disc, a semiconductor substrate, a liquid crystal display device, an organic EL (Electro Luminescence) display device, etc. Substrates for magnetic discs, substrates for magneto-optical discs, substrates for photomasks, substrates for solar cells, etc.

[1] Configuration FIG. 1 is a schematic cross-sectional view showing a specific configuration example of the adhesion enhancement processing apparatus 100 of the present embodiment. The adhesion enhancement processing device 100 of FIG. 1 includes a chamber 201, a cover lifting mechanism 209, a pressure sensor 210, a plurality of support pins 243, a support pin lifting mechanism 247, and an exhaust device 256.

The chamber 201 includes a plate 205 and a cover 207. A plurality of (for example, three) proximity balls 241 are provided on the upper surface of the board 205. The substrate W is placed on a plurality of proximity balls 241 in a horizontal posture. In this case, the processed surface of the substrate W faces upward. The cover 207 is provided so as to cover above the placed substrate W. The cover 207 is connected to the cover lifting mechanism 209. The cover lifting mechanism 209 is, for example, an air cylinder, and raises and lowers the cover 207 between an upper position and a lower position. In FIG. 1, the cover 207 is located at the lower position. When the cover 207 is in the lower position, an airtight processing space PS for housing the substrate W is formed between the cover 207 and the plate 205. The pressure sensor 210 detects the pressure of the processing space PS.

A gas flow path 213 is provided in the cover 207. The gas flow path 213 has an open end 213a at the center of the lower surface of the cover 207. The open end 213a faces the center of the substrate W placed on the plate 205. The gas flow path 213 is connected to the inert gas supply part Q1 and the adhesion strengthening gas supply part Q2 via the gas supply pipe 261, respectively. The inert gas supply unit Q1 supplies the inert gas to the processing space PS through the gas supply pipe 261 and the gas flow path 213. The inert gas is, for example, nitrogen. The adhesion strengthening gas supply unit Q2 supplies the adhesion strengthening gas to the processing space PS through the gas supply pipe 261 and the gas flow path 213. The adhesion strengthening gas contains an adhesion strengthening agent. The adhesion enhancer is, for example, HMDS (hexamethyldisilazane). Each of the inert gas supply part Q1 and the adhesion strengthening gas supply part Q2 includes, for example, a valve, and the supply timing of the inert gas and the adhesion strengthening gas can be controlled by controlling the switching timing of the valve.

A plurality of (for example, three) through holes 245 are provided so as to penetrate the plate 205 in the vertical direction. Plural (for example, three) support pins 243 are inserted into the through holes 245 of the plate 205, respectively. Below the plate 205, the lower end of each support pin 243 is connected to the support pin lifting mechanism 247. The support pin lifting mechanism 247 raises and lowers the plurality of support pins 243. A sealing portion 243a on a circular plate is attached to the upper end of each support pin 243. At the upper end portion of each through hole 245 of the plate 205, a concave portion 245a capable of accommodating the sealing portion 243a is formed. Since the peripheral portion of the lower surface of the sealing portion 243a is in close contact with the bottom surface of the concave portion 245a, the airtightness of the processing space PS is ensured.

Inside the plate 205, a temperature adjustment part 249 for adjusting the temperature of the substrate W is provided. The temperature adjustment unit 249 is, for example, a heater. The temperature adjustment unit 249 adjusts the temperature of the plate 205 to perform heat treatment on the substrate W placed on the plate 205.

In the plate 205, an exhaust slit 251 is formed so as to extend in the circumferential direction outside the area where the substrate W is placed. In addition, a plurality of exhaust ports 253 are formed so as to communicate with the exhaust slits 251, respectively. An exhaust pipe 255 is connected to the plurality of exhaust ports 253. An exhaust device 256 is inserted into the exhaust pipe 255. The exhaust device 256 includes, for example, a pump, and exhausts gas from the processing space PS through the exhaust pipe 255. With this, the processing space PS is decompressed. In this example, the operation state of the exhaust device 256 can be switched between a strong state and a weak state. By operating the exhaust device 256 in a strong state, the pressure of the processing space PS can be adjusted to be lower than when the exhaust device 256 is operated in a weak state. As the exhaust device 256, an ejector that exhausts gas from the processing space PS by the entrapment of compressed gas may also be used.

FIG. 2 is a block diagram for explaining the control system of the adhesion enhancement processing device 100. As shown in FIG. 2, the adhesion enhancement processing device 100 includes a control unit 150. The control unit 150 includes a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), a memory device, and the like.

The control unit 150 includes a cover lift control unit 51, a support pin lift control unit 52, a decompression control unit 53, an inert gas supply control unit 54, an adhesion strengthening gas supply control unit 55, a temperature control unit 56, and a time control unit 57 . The functions of these constituent elements (51-57) are realized by causing the CPU to execute a computer program stored in a storage medium such as a ROM or a memory device. The pressure sensor 210 supplies a value indicating the detected pressure (hereinafter, referred to as a detected pressure value) to the decompression control unit 53 and the inert gas supply control unit 54.

The cover lifting control unit 51 controls the lifting of the cover 207 in FIG. 1 by controlling the cover lifting mechanism 209. The support pin lifting control section 52 controls the lifting of the plurality of support pins 243 in FIG. 1 by controlling the support pin lifting mechanism 247. The decompression control unit 53 controls the exhaust of the processing space PS by controlling the exhaust device 256. The inert gas supply control unit 54 controls the supply of inert gas to the processing space PS by controlling the inert gas supply unit Q1. The adhesion strengthening gas supply control unit 55 controls the supply of the adhesion strengthening gas to the processing space PS by controlling the adhesion strengthening gas supply unit Q2. The temperature adjustment control unit 56 controls the temperature adjustment unit 249 to adjust the temperature adjustment of the substrate W. The time control unit 57 controls the timing of the start and end of the operations of the decompression control unit 53, the inert gas supply control unit 54, the adhesion enhancement gas supply control unit 55, and the temperature adjustment control unit 56.

[2] Operation FIG. 3 is a flowchart showing the outline of the adhesion enhancement processing in the adhesion enhancement processing apparatus 100. First, the cover lift control unit 51 moves the cover 207 to the upper position (step S1). In this state, a transport device (not shown) transports the substrate W above the board 205. Next, the support pin lifting control unit 52 raises the plurality of support pins 243 (step S2). As a result, the substrate is delivered to the plurality of support pins 243 from the transport device (not shown). Next, the support pin lifting control unit 52 lowers the plurality of support pins 243 (step S3). With this, the substrate W is placed on the plurality of proximity balls 241.

Next, the cover lift control unit 51 moves the cover 207 to the lower position (step S4). Thereby, an airtight processing space PS accommodating the substrate W is formed. Next, the decompression control unit 53 starts the operation of the exhaust device 256 (step S5). In this case, the decompression control unit 53 sets the operation state of the exhaust device 256 to a weak state. Moreover, the temperature adjustment control part 56 starts the temperature adjustment of the board|substrate W (step S6). Next, the decompression control unit 53 determines whether the detected pressure value from the pressure sensor 210 becomes equal to or lower than a predetermined low vacuum value P1 (step S7). The decompression control unit 53 repeatedly performs step S7 until the detected pressure value becomes a low vacuum value P1 or less. When the detected pressure value becomes equal to or lower than the low vacuum value P1, the decompression control unit 53 switches the operation state of the exhaust device 256 to the strong state (step S8).

Next, the inert gas supply control unit 54 determines whether the detected pressure value from the pressure sensor 210 becomes equal to or less than a predetermined high vacuum value P2 (step S9). The inert gas supply control unit 54 repeatedly performs step S9 until the detected pressure value becomes equal to or less than the high vacuum value P2. When the detected pressure value becomes equal to or less than the high vacuum value P2, the inert gas supply control unit 54 starts supplying the inert gas to the processing space PS (step S10).

When the predetermined first supply time has elapsed since the start of the inert gas supply in step S10, the inert gas supply control unit 54 stops the supply of the inert gas to the processing space PS (step S11). At the same time, the adhesion strengthening gas supply control unit 55 starts supplying the adhesion strengthening gas to the processing space PS (step S12). As a result, the inert gas in the processing space PS is replaced with dense strengthening gas.

When a predetermined second supply time has elapsed since the supply of the adhesion strengthening gas in step S12, the adhesion strengthening gas supply control unit 55 stops the supply of the adhesion strengthening gas to the processing space PS (step S13). In addition, the decompression control unit 53 switches the operation state of the exhaust device 256 to a weak state (step S14).

When a predetermined maintenance time elapses since the operation state of the exhaust device 256 is switched in step S14, the inert gas supply control unit 54 starts supplying the inert gas to the processing space PS (step S15). In addition, the decompression control unit 53 switches the operation state of the exhaust device 256 to a strong state (step S16).

When the predetermined third supply time has elapsed since the operating state of the exhaust device 256 was switched in step S16, the decompression control unit 53 switches the operating state of the exhaust device 256 to a weak state (step S17). Next, the decompression control unit 53 determines whether the detected pressure value from the pressure sensor 210 becomes a predetermined low vacuum value P3 or more (step S18). The low vacuum value P3 is a value similar to the aforementioned low vacuum value P1, and is slightly lower than the low vacuum value P1. The decompression control unit 53 repeatedly performs step S18 until the detected pressure value becomes a low vacuum value P3 or more. When the detected pressure value becomes equal to or higher than the low vacuum value P3, the decompression control unit 53 stops the operation of the exhaust device 256 (step S19). In addition, the inert gas supply control unit 54 stops the supply of the inert gas to the processing space PS (step S20). Furthermore, the temperature adjustment control unit 56 stops the temperature adjustment of the substrate W (step S21).

When the pressure of the processing space PS becomes equal to the atmospheric pressure, the cover elevation control unit 51 moves the cover 207 to the upper position (step S22). In addition, the support pin lifting control unit 52 raises the plurality of support pins 243 (step S23). With this, the substrate W is delivered from the plurality of proximity balls 241 to the plurality of support pins 243. In this state, a transport device (not shown) receives the substrate W from a plurality of support pins 243, and transports the substrate W out of the adhesion strengthening processing device 100. As a result, a series of operations of the adhesion enhancement processing device 100 ends.

[3] Changes in pressure in the processing space FIG. 4 is a diagram for explaining changes in the pressure in the processing space PS. In FIG. 4, the change in the operating state of the exhaust device 256 and the supply timing of the inert gas and the dense strengthening gas are shown together with the change in the pressure of the processing space PS. In FIG. 4, the horizontal axis represents time, and the vertical axis represents the pressure of the processing space PS and the flow rates of inert gas and dense strengthening gas.

In the example of FIG. 4, the time t1 is the time after the airtight processing space PS is formed, and the pressure of the processing space PS drops to the low vacuum value P1 (Yes in step S7 of FIG. 3 ). The low vacuum value P1 is, for example, a value in the range of -4 kPa or more and -1 kPa or less, for example, -2 kPa. At time t1, the operating state of the exhaust device 256 is switched to the strong state (step S8 in FIG. 3). As a result, the pressure of the processing space PS further decreases, and at time t2, the pressure of the processing space PS becomes a high vacuum value P2 (YES in step S9 of FIG. 3). The high vacuum value P2 is an example of the third value. The high vacuum value P2 is, for example, a value in the range of -25 kPa or more and -18 kPa or less, for example, -20 kPa.

When the pressure of the processing space PS becomes the high vacuum value P2 at time t2, the supply of inert gas to the processing space PS starts (step S10 in FIG. 3). In this case, the pressure of the processing space PS rises by the supply of inert gas. If the exhaust volume of the exhaust device 256 is balanced with the supply volume of the inert gas, the pressure of the processing space PS converges to the intermediate value P4. The intermediate value P4 is lower than the low vacuum value P1 and higher than the high vacuum value P2. The intermediate value P4 is an example of the first value. The intermediate value P4 is, for example, a value in the range of -10 kPa or more and -5 kPa or less, for example, -7 kPa

At time t3, the supply of inert gas is stopped, and the supply of dense strengthening gas is started (steps S11 and S12 in FIG. 3). In this example, the flow rate of the adhesion strengthening gas is less than the flow rate of the inert gas. Therefore, the pressure of the processing space PS decreases from the intermediate value P4. If the exhaust volume of the exhaust device 256 is balanced with the supply volume of the dense strengthening gas, the pressure of the processing space PS converges to the intermediate value P5. The intermediate value P5 is higher than the high vacuum value P2 and lower than the intermediate value P4. The intermediate value P5 is an example of the second value. The intermediate value P5 is, for example, a value in the range of -20 kPa or more and -10 kPa or less, for example, -15 kPa.

At time t4, the supply of dense strengthening gas is stopped, and the operation state of the exhaust device 256 is switched to the weak state (steps S13 and S14 in FIG. 3). In this case, in a state where the processing space PS is filled with dense strengthening gas, the pressure of the processing space PS is maintained at an intermediate value P5. During the period from time t3 to time t4, an adhesion strengthening agent is applied to the surface of the substrate W to be treated. As a result, the roughness of the processed surface of the substrate W is improved. In the subsequent process, a processing film (for example, a resist film) is formed on the processed surface of the substrate W. The adhesion of the processed surface of the substrate W and the processing film is ensured by the application of the adhesion strengthening agent.

At time t5, the supply of inert gas is started, and the operation state of the exhaust device 256 is switched to the strong state (steps S15 and S16 in FIG. 3). With this, the pressure of the processing space PS rises again and converges to the intermediate value P4. In this example, the flow rate of the inert gas in the period from time t5 to time t7 is equal to the flow rate of the inert gas in the period from time t2 to time t3, but the flow rate of inert gas in the period from time t5 to time t7 can also be made The flow rate is different from the flow rate of the inert gas during the period from time t3 to time t4.

At time t6, the operating state of the exhaust device 256 is switched to the weak state (step S17 in FIG. 3). With this, the pressure of the processing space PS further increases. If at time t7, the pressure of the processing space PS reaches the low vacuum value P3, the operation of the exhaust device 256 is stopped (step S19 in FIG. 3), and the supply of inert gas is stopped (step S20 in FIG. 3).

In this way, in the present embodiment, after the pressure of the processing space PS drops to the high vacuum value P2, the inert gas is supplied to the processing space PS to increase the pressure of the processing space PS to the intermediate value P4. In this state, by stopping the supply of the inert gas and starting the supply of the dense strengthening gas, the pressure of the processing space PS is reduced from the intermediate value P4 to the intermediate value P5.

FIG. 5 is a diagram for explaining a comparative example of the present invention. In FIG. 5, as in FIG. 4, the change in the operating state of the exhaust device 256 and the supply timing of the inert gas and the dense strengthening gas are shown together with the change in the pressure of the processing space PS.

The difference between the comparative example of FIG. 5 and the example of FIG. 4 is that no inert gas is supplied before the supply of the close strengthening gas. Specifically, the time t11 is the same as the time t1 in FIG. 4 after the formation of the airtight processing space PS, and the pressure of the processing space PS drops to the low vacuum value P1. During the period from time t11 to time t12, the pressure of the processing space PS decreases from the low vacuum value P1 to the high vacuum value P2. From time t12 to time t13, dense strengthening gas is supplied to the processing space PS, and the pressure of the processing space PS is maintained at an intermediate value P5 from time t13 to time t14. The inert gas is supplied to the processing space PS from time t14 to time t15, and from time t15 to time 16, the pressure of the processing space PS rises from the intermediate value P4 to the low vacuum value P3.

In the comparative example of FIG. 5, in a state where the pressure of the processing space PS is at a high vacuum value P2, the supply of dense strengthening gas is started. In this case, the dense strengthening gas introduced into the processing space PS rapidly moves from the gas flow path 213 located above the center portion of the substrate W of FIG. 1 toward the exhaust slit 251 located outside the substrate W. Therefore, the adhesion strengthening gas easily contacts the peripheral portion of the substrate W in a concentrated manner. As a result, the amount of adhesion enhancer per unit area in the peripheral portion of the substrate W becomes larger than the amount of adhesion enhancer per unit area in the central portion of the substrate W. As a result, unevenness of the surface of the substrate W to be processed is uneven.

Moreover, if the supply of dense strengthening gas is started when the pressure of the processing space PS is low, the pressure of the processing space PS is likely to be uneven. Therefore, the flow of the adhesion strengthening gas in the processing space PS is unstable, and it is difficult to control the amount of the adhesion strengthening agent applied to the substrate W.

On the other hand, in the present embodiment, in a state where the pressure of the processing space PS is adjusted to a relatively high intermediate value P4, the supply of the dense strengthening gas is started. This suppresses the increase in the flow rate of the dense strengthening gas in the processing space PS. As a result, the densely strengthened gas slowly diffuses from the open end 213a of the gas flow path 213 to the entire processing space PS. Therefore, the adhesion strengthening gas uniformly contacts the entire surface of the substrate W to be processed. Therefore, the adhesion strengthening agent can be uniformly applied to the entire surface of the substrate W to be processed. This makes it possible to uniformly adjust the roughness of the processed surface of the substrate W.

In addition, the unevenness of the pressure of the processing space PS when the densely strengthened gas is supplied is suppressed. Thereby, the flow of the adhesion strengthening gas is stabilized, and the application amount of the adhesion strengthening agent to the substrate W can be appropriately controlled.

Furthermore, in this embodiment, after the pressure of the processing space PS drops to a high vacuum value P2, an inert gas is supplied to the processing space PS. In this case, impurities such as liquid remaining in the processing space PS can be efficiently removed. Thereby, when the adhesion strengthening gas is supplied, the inert gas can be quickly replaced by the adhesion strengthening gas. In addition, since impurities are prevented from being mixed into the adhesion strengthening gas, the processing accuracy of the substrate W by the adhesion strengthening processing device 100 becomes higher.

Moreover, in this embodiment, the flow rate of the adhesion strengthening gas is less than the flow rate of the inert gas, and the pressure (median value P5) of the processing space PS when the adhesion strengthening gas is supplied is lower than that of the processing space PS when the inert gas is supplied Pressure (median value P4). This can reduce the amount of adhesion strengthening gas used. In addition, since the increase in the flow rate of the adhesion strengthening gas can be more reliably suppressed, the uniformity of the application of the adhesion strengthening agent to the entire surface of the substrate W to be treated can be further improved.

[4] Other embodiments In the above embodiments, the inert gas is supplied after the pressure of the processing space PS is reduced to the high vacuum value P2 by the exhaust device 256, but the present invention is not limited to this. For example, at time t1 in FIG. 4, the operation state of the exhaust device 256 may be switched to a strong state, and the supply of inert gas may be started. In this case, the pressure of the processing space PS drops from the low vacuum value P1 to the intermediate value P4.

In the above embodiment, the inert gas is supplied so that the pressure of the processing space PS becomes the intermediate value P4, and the dense strengthening gas is supplied such that the pressure of the processing space PS becomes the intermediate value P5 lower than the intermediate value P4, but The present invention is not limited to this. For example, the flow rates of the inert gas and the densely strengthened gas may be set so that the pressure of the processing space PS when the inert gas is supplied becomes equal to the pressure of the treatment space PS when the densely strengthened gas is supplied. In addition, the flow rates of the inert gas and the densely strengthened gas may be set in such a manner that the pressure of the processing space PS when the intensified strengthening gas is supplied becomes higher than the pressure of the processing space PS when the inert gas is supplied.

In the above embodiment, the operation state of the exhaust device 256 is before the supply of the inert gas (the period from time t1 to time t2 in FIG. 4) and when the supply of the inert gas (the period from time t2 to time t3 in FIG. 4) , And the supply of densely strengthened gas (the period from time t3 to time t4 in FIG. 4) is maintained constant, but the operating state of the exhaust device 256 can also be switched during these periods. For example, the operating state of the exhaust device 256 may be switched to a weak state at least one of when the inert gas is supplied and when the densely strengthened gas is supplied. Alternatively, the operating state of the exhaust device 256 can be switched to three or more stages.

In the above embodiment, an adhesion enhancer containing HMDS as an organic material is used, but as long as the substrate W can be improved in water solubility, adhesion using other organic materials such as TMSDMA (trimethylsilane dimethylamine) can also be used Fortifier. In addition, in the above embodiment, nitrogen gas is used as the inert gas, but other inert gas that does not affect the adhesion strengthening agent may be used.

[5] Correspondence between each element of the technical solution and each element of the embodiment The following describes an example of correspondence between each element of the technical solution and each element of the embodiment, but the present invention is not limited to the following examples.

In the above embodiment, the adhesion strengthening treatment device 100 is an example of an adhesion strengthening treatment device, the chamber 201 is an example of a chamber, the processing space PS is an example of a processing space, and the exhaust device 256 is an example of a decompression section. The inert gas supply part Q1 is an example of an inert gas supply part, the adhesion strengthening gas supply part Q2 is an example of an adhesion strengthening gas supply part, an intermediate value P4 is an example of a first value, and an intermediate value P5 is an example of a second value, The high vacuum value P2 is an example of the third value.

As each constituent element of the technical solution, other various elements having the configurations or functions described in the technical solution can also be used.

51‧‧‧ Cover lift control unit 52‧‧‧ Support pin lift control unit 53‧‧‧ Decompression control unit 54‧‧‧ Inert gas supply control unit 55‧‧‧ Adhesion enhanced gas supply control unit 56‧‧‧ Temperature adjustment control part 57‧‧‧ Time control part 100‧‧‧ Adhesion strengthening treatment device 150‧‧‧‧ Control part 201‧‧‧ Chamber 205‧‧‧ Plate 207‧‧‧ Cover 209‧‧‧ Cover lift Mechanism 210 Pressure sensor 213‧‧‧Gas flow path 213a‧‧‧Open end 241‧‧‧Proximity ball 243‧‧‧Support pin 243a‧‧‧Seal part 245‧‧‧Through hole 245a‧‧‧ Recessed part 247‧‧‧Support pin lifting mechanism 249‧‧‧Temperature adjustment part 251‧‧‧Exhaust slit 253‧‧‧Exhaust port 255‧‧‧Exhaust pipe 256‧‧‧Exhaust device 261‧‧‧Gas Supply pipe P1‧‧‧Low vacuum value P2‧‧‧High vacuum value P3‧‧‧Low vacuum value P4‧‧‧Intermediate value P5‧‧‧Intermediate value Q1‧‧‧Inert gas supply unit Q2‧‧‧Close adhesion strengthening Gas supply part t1‧‧‧ hour t2‧‧‧ hour t3‧‧‧ hour t4‧‧‧ hour t5‧‧‧ hour t6‧‧‧ hour t7‧‧‧ hour t11‧‧‧ hour t12‧‧‧ hour t13‧ ‧‧T‧‧‧‧t15 ‧‧‧t16‧‧‧w W‧‧‧

FIG. 1 is a schematic cross-sectional view showing a specific configuration example of an adhesion enhancement processing device. FIG. 2 is a block diagram for explaining the control system of the adhesion enhancement processing device. FIG. 3 is a flowchart showing the outline of the adhesion enhancement processing in the adhesion enhancement processing device. FIG. 4 is a diagram for explaining changes in pressure in the processing space. FIG. 5 is a diagram for explaining a comparative example of the present invention.

P1‧‧‧Low vacuum value

P2‧‧‧High vacuum value

P3‧‧‧Low vacuum value

P4‧‧‧Median

P5‧‧‧Median

t1‧‧‧ hour

t2‧‧‧ hour

t3‧‧‧ hour

t4‧‧‧ hour

t5‧‧‧ hour

t6‧‧‧ hour

t7‧‧‧ hour

Claims (10)

An adhesion-enhanced processing device comprising: a chamber that forms a processing space that houses a substrate; a decompression portion that reduces the pressure of the processing space by discharging gas from the processing space; an inert gas supply portion that uses The method in which the pressure of the processing space becomes the first value lower than the atmospheric pressure, inert gas is supplied to the processing space in a state where the gas is discharged through the decompression portion; and the closely strengthened gas supply portion, which is After the inert gas supply unit supplies the inert gas to the processing space, the pressure in the processing space becomes a second value lower than atmospheric pressure, and the gas is discharged from the depressurizing unit to the processing space in a state where the gas is discharged through the decompression unit. The strengthening gas adheres to the strengthening agent; and the second value is lower than the first value. The adhesion strengthening treatment device according to claim 1, wherein the adhesion strengthening gas supply unit starts supplying the adhesion strengthening gas to the processing space when the supply of the inert gas by the inert gas supply unit to the processing space is stopped. An adhesion-enhanced processing device, comprising: a chamber that forms a processing space that houses a substrate; a decompression portion that reduces the pressure of the processing space by exhausting gas from the processing space; An inert gas supply unit that supplies an inert gas to the processing space in a state where the pressure in the processing space becomes a first value lower than atmospheric pressure in a state where the gas is discharged through the decompression unit; After the inert gas is supplied to the processing space by the inert gas supply portion, the pressure in the processing space becomes a second value lower than atmospheric pressure, in a state where the gas is discharged by the decompression portion An adhesion strengthening gas containing an adhesion strengthening agent is supplied to the processing space; and the inert gas supply portion supplies the inert gas to the processing space at a first flow rate, and the adhesion strengthening gas supply portion reduces the adhesion strengthening gas to less than The second flow rate of the first flow rate is supplied to the processing space. An adhesion-enhanced processing device comprising: a chamber that forms a processing space that houses a substrate; a decompression portion that reduces the pressure of the processing space by discharging gas from the processing space; an inert gas supply portion that uses The method in which the pressure of the processing space becomes the first value lower than the atmospheric pressure, inert gas is supplied to the processing space in a state where the gas is discharged through the decompression portion; and the closely strengthened gas supply portion, which is After the inert gas supply unit supplies the inert gas to the processing space, the pressure in the processing space becomes a second value lower than atmospheric pressure, and the gas is discharged from the depressurizing unit to the processing space in a state where the gas is discharged through the decompression unit. A densely strengthened gas with a strengthening agent; and the decompression portion reduces the pressure of the processing space to be lower than the first value and lower than the above The third value of the second value, and after the pressure of the processing space is reduced to the third value by the depressurizing portion, the pressure of the processing space is increased from the third value to the third value with the pressure of the processing space The inert gas is supplied to the processing space in a one-value mode. The adhesion enhancement processing device according to claim 4, wherein the second value is lower than the first value, and the adhesion enhancement gas supply unit is such that the pressure of the treatment space decreases from the first value to the second value A densely strengthened gas is supplied to the processing space. An adhesion strengthening treatment method includes the steps of: housing a substrate in a processing space formed by a chamber; and discharging gas from the processing space in such a manner that the pressure of the processing space becomes a first value lower than atmospheric pressure, Supplying the inert gas to the processing space; and after the step of supplying the inert gas, discharging the gas from the processing space in such a way that the pressure of the processing space becomes the second value lower than atmospheric pressure The treatment space is supplied with an adhesion strengthening gas containing an adhesion strengthening agent; and the second value is lower than the first value. The adhesion strengthening treatment method according to claim 6, wherein the step of supplying the adhesion strengthening gas includes starting supplying the adhesion strengthening gas to the processing space when the supply of inert gas to the processing space is stopped. An adhesion strengthening treatment method includes the following steps: Containing the substrate in the processing space formed by the chamber; in such a way that the pressure of the processing space becomes the first value lower than atmospheric pressure, while exhausting gas from the processing space and supplying inert gas to the processing space; and After the step of supplying the inert gas, while the pressure of the processing space becomes a second value lower than atmospheric pressure, while the gas is discharged from the processing space, the adhesive reinforcement including the adhesive strengthening agent is supplied to the processing space Gas; and the step of supplying the inert gas includes supplying the inert gas to the processing space at a first flow rate, and the step of supplying the adhesion strengthening gas includes supplying the adhesion strengthening gas at a second flow rate less than the first flow rate to The above processing space. An adhesion strengthening treatment method includes the steps of: housing a substrate in a processing space formed by a chamber; and discharging gas from the processing space in such a manner that the pressure of the processing space becomes a first value lower than atmospheric pressure, Supplying the inert gas to the processing space; and after the step of supplying the inert gas, discharging the gas from the processing space in such a way that the pressure of the processing space becomes the second value lower than atmospheric pressure The treatment space is supplied with an adhesion strengthening gas containing an adhesion strengthening agent; and before the step of supplying an inert gas, the method further includes the step of reducing the pressure of the treatment space below the first value and below the second value The third value, and the step of supplying the inert gas includes supplying the inert gas to the processing space so that the pressure of the processing space increases from the third value to the first value. The adhesion strengthening treatment method according to claim 9, wherein the second value is lower than the first value, and the step of supplying the adhesion strengthening gas includes decreasing the pressure from the first value to the second value with the pressure of the processing space Method to supply densely-enhanced gas to the processing space.

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