JP5235293B2 - Process gas supply mechanism, process gas supply method, and gas processing apparatus - Google Patents

Description

  The present invention relates to a processing gas supply mechanism for supplying a processing gas into a processing container so that a predetermined processing is performed on an object to be processed such as a glass substrate for a flat panel display (FPD) accommodated in the processing container; The present invention relates to a processing gas supply method and a gas processing apparatus including such a processing gas supply mechanism.

  In an FPD manufacturing process, a plasma processing apparatus such as a plasma etching apparatus or a plasma CVD film forming apparatus is used to perform a predetermined process such as etching or film formation on an FPD glass substrate that is an object to be processed. It has been. Generally in a plasma processing apparatus, a glass substrate is placed on a mounting table in a processing container, and a processing gas generated by generating a high-frequency electric field while supplying the processing gas into the processing container. Processed by plasma.

  Supply of the processing gas into the processing container is usually performed while adjusting the flow rate by a flow rate adjusting mechanism such as a mass flow controller through a flow path such as a pipe having one end connected to the processing gas supply source and the other end connected to the processing container. (For example, refer to Patent Document 1).

However, recently, an increase in the size of the FPD has been aimed at, and a huge glass substrate having a side exceeding 2 m has also appeared, and accordingly, the processing container has become larger. In the gas supply mode, there is a problem that it takes a long time until the pressure in the processing container reaches the set pressure after the supply of the processing gas is started, and the throughput is lowered.
JP 2002-313898 A

  The present invention has been made in view of such circumstances, and a processing gas supply mechanism and a processing gas supply method capable of supplying a processing gas at a set pressure in a processing container in a short time. It is an object of the present invention to provide a gas processing apparatus having such a processing gas supply mechanism and a computer-readable storage medium storing a control program for executing such a processing gas supply method.

In order to solve the above problems, according to a first aspect of the present invention, a processing container that accommodates an object to be processed, a processing gas supply mechanism that supplies a processing gas into the processing container, and an exhaust of the processing container. An exhaust means and a control unit for controlling the processing gas supply mechanism are provided, and the processing gas is supplied by the processing gas supply mechanism while being exhausted by the exhaust means in a state where the object to be processed is accommodated in the processing container. A gas processing apparatus for performing a predetermined process on the object to be processed, wherein the processing gas supply mechanism includes a processing gas supply source for supplying a processing gas into the processing container, and the processing gas supply source. A processing gas tank for temporarily storing the processing gas from the processing gas, a processing gas from the processing gas supply source is supplied to the processing gas tank, and a processing gas in the processing gas tank is supplied to the processing container place A gas flow member, and the processing gas is temporarily stored in the processing gas tank from the processing gas supply source and is supplied from the processing gas tank into the processing container, and also from the processing gas supply source. The process gas flow member is supplied to the process gas supply source and the process container, and the process gas tank is branched from the first process gas path. And a plurality of the processing gas tanks are provided, and a plurality of the second processing gas channels are provided corresponding to the number of the processing gas tanks, Each of the second processing gas flow paths separately has an inflow path for sending processing gas into the processing gas tank and an outflow path for sending out processing gas from the processing gas tank, The control unit is configured to supply a processing gas from a part of the plurality of processing gas tanks to the processing container through the delivery channel, and from the processing gas supply source through the delivery channel. A gas processing apparatus is provided in which a processing gas is stored in the remaining part or all of the plurality of processing gas tanks.

In the first aspect , the first processing gas channel includes a storage channel through which processing gas from the processing gas supply source is stored in the processing gas tank, and from the processing gas supply source. You may have separately the supply flow path made to flow when supplying process gas in the said process container.

In the first aspect , when the exhaust means includes an exhaust passage connected to the processing vessel and an exhaust device for exhausting the inside of the processing vessel through the exhaust passage, the processing gas A bypass flow path is connected to the flow member and a part of the plurality of exhaust passages, and the processing gas in the processing gas flow member can be discharged by the exhaust means through the bypass flow path. The exhaust passage connected to the bypass flow path is preferably openable and closable on the upstream side of the connection portion with the bypass flow path.

Furthermore , in the first aspect, the processing container further includes a plasma generation mechanism that generates plasma of the processing gas supplied by the processing gas supply mechanism, and the predetermined processing includes processing gas plasma. The plasma treatment used is preferred.

Further, according to a second aspect of the present invention, there is provided a processing gas supply method for supplying a processing gas into the processing container such that a predetermined processing is performed on an object to be processed accommodated in the processing container, A processing gas supply source for supplying a processing gas into the processing container; a processing gas tank for temporarily storing the processing gas from the processing gas supply source; and the processing gas from the processing gas supply source. Preparing a processing gas flow member that feeds the processing gas in the processing gas tank into the processing container, and temporarily stores the processing gas in the processing gas tank from the processing gas supply source; A first processing gas flow path that is supplied from the processing gas tank into the processing container and the processing gas flow member is connected to the processing gas supply source and the processing container; and the first processing gas flow path Branch from A second processing gas flow path connected to the processing gas tank, a processing gas is also supplied from the processing gas supply source into the processing container, a plurality of the processing gas tanks are provided, and the second A plurality of processing gas flow paths corresponding to the number of the processing gas tanks, each of the second processing gas flow paths, an inflow flow path for sending the processing gas into the processing gas tank, and a processing gas. A delivery flow path for sending out from the processing gas tank is separately provided, and the processing gas is supplied into the processing container from a part of the plurality of processing gas tanks via the delivery flow path; In parallel, a process gas supply method is provided, wherein a process gas is stored in the remaining part or all of the plurality of process gas tanks from the process gas supply source through the inlet flow path.

According to a third aspect of the present invention, there is provided a processing gas supply method for supplying a processing gas into the processing container so that a predetermined processing is performed on an object to be processed accommodated in the processing container, A processing gas supply source for supplying a processing gas into the processing container; a processing gas tank for temporarily storing the processing gas from the processing gas supply source; and the processing gas from the processing gas supply source. Preparing a processing gas flow member that feeds the processing gas in the processing gas tank into the processing container, and temporarily stores the processing gas in the processing gas tank from the processing gas supply source; A first processing gas flow path that is supplied from the processing gas tank into the processing container and the processing gas flow member is connected to the processing gas supply source and the processing container; and the first processing gas flow path Branch from A second processing gas flow path connected to the processing gas tank, a processing gas is also supplied into the processing container from the processing gas supply source, and the second processing gas flow path is A gas flow path for feeding gas into the process gas tank and a flow path for sending process gas out of the process gas tank are separately provided, and the process gas supply source is made of a plurality of different types. A plurality of first gas supply passages are provided so as to supply process gas, and the first process gas flow path is divided into a plurality of supply gas sources corresponding to the number of the process gas supply sources and connected to the respective process gas supply sources. The process gas tank is configured such that the supply flow path of the second process gas flow path is branched from each of the supply source connection flow paths of the first process gas flow path. Through the delivery flow path into the processing vessel After supplying a processing gas having a predetermined type and ratio, the predetermined processing type and ratio are supplied from a part or all of the plurality of processing gas supply sources into the processing container through the first processing gas channel. In parallel with the supply of the processing gas, a type different from the predetermined type and / or ratio from a part or all of the plurality of processing gas supply sources to the processing gas tank via the inlet channel and / or Provided is a processing gas supply method characterized by storing a processing gas having a ratio.

According to a fourth aspect of the present invention, there is provided a processing gas supply method for supplying a processing gas into the processing container such that a predetermined processing is performed on an object to be processed accommodated in the processing container, A processing gas supply source for supplying a processing gas into the processing container; a processing gas tank for temporarily storing the processing gas from the processing gas supply source; and the processing gas from the processing gas supply source. Preparing a processing gas flow member that feeds the processing gas in the processing gas tank into the processing container, and temporarily stores the processing gas in the processing gas tank from the processing gas supply source; A first processing gas flow path that is supplied from the processing gas tank into the processing container and the processing gas flow member is connected to the processing gas supply source and the processing container; and the first processing gas flow path Branch from A second processing gas flow path connected to the processing gas tank, a processing gas is also supplied from the processing gas supply source into the processing container, a plurality of the processing gas tanks are provided, and the second A plurality of processing gas flow paths corresponding to the number of the processing gas tanks, each of the second processing gas flow paths, an inflow flow path for sending the processing gas into the processing gas tank, and a processing gas. The first processing gas flow path is configured to have a separate delivery flow path for delivering from the processing gas tank, and a plurality of the processing gas supply sources are provided so as to supply different types of processing gases. Having a supply source connection flow path branched into a plurality corresponding to the number of the processing gas supply sources and connected to each processing gas supply source, and the second processing gas flow path An inflow channel is connected to the first process. Branching from each supply source connection flow path of the gas flow path, a processing gas of a predetermined type and ratio is supplied into the processing container from a part of the plurality of processing gas tanks via the delivery flow path. Along with supplying the processing gas of the predetermined type and ratio into the processing container from the part or all of the plurality of processing gas supply sources through the first processing gas flow path, From a part or all of the plurality of processing gas supply sources to the remaining part or all of the plurality of processing gas tanks via the inlet flow path, the kind and / or ratio is different from the predetermined kind and ratio. A process gas supply method characterized by storing a process gas is provided.

Further, according to a fifth aspect of the present invention, there is provided a computer-readable storage medium storing a control program that operates on a computer, and the control program is one of the second to fourth aspects when executed. According to another aspect of the present invention, there is provided a computer-readable storage medium characterized in that a processing apparatus is controlled by a computer so that the processing gas supply method according to the above is performed.

  According to the present invention, the processing gas is temporarily stored in the processing gas tank from the processing gas supply source via the processing gas flow member, and is supplied from the processing gas tank into the processing container. Such a processing gas can be supplied in a short time. Therefore, it is possible to shorten the processing time of the object to be processed.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
FIG. 1 is a schematic sectional view of a plasma etching apparatus which is an embodiment of a gas processing apparatus according to the present invention.

  The plasma etching apparatus 1 is configured as a capacitively coupled parallel plate plasma etching apparatus that performs etching on an FPD glass substrate (hereinafter simply referred to as “substrate”) G that is an object to be processed. Examples of the FPD include a liquid crystal display (LCD), an electroluminescence (EL) display, a plasma display panel (PDP), and the like. The plasma etching apparatus 1 includes a chamber 2 as a processing container that accommodates a substrate G, a processing gas supply mechanism 3 that supplies a processing gas into the chamber 2, an exhaust means 4 that exhausts the inside of the chamber 2, and a processing gas supply mechanism. 3 and a plasma generation mechanism 5 for generating plasma of the processing gas supplied into the chamber 2.

  The chamber 2 is made of, for example, aluminum whose surface is anodized (anodized), and is formed in a square tube shape corresponding to the shape of the substrate G. A susceptor 20 as a mounting table on which the substrate G is mounted is provided on the bottom wall in the chamber 2. The susceptor 20 is formed in a square plate shape or a column shape corresponding to the shape of the substrate G, and a base material 20a made of a conductive material such as metal and an insulating member 20b made of an insulating material covering the periphery of the base material 20a. And an insulating member 20c made of an insulating material provided so as to cover the bottoms of the base member 20a and the insulating member 20b and supporting them. The base material 20a has an electrostatic adsorption mechanism for adsorbing the placed substrate G, and a temperature adjustment mechanism including a cooling means such as a refrigerant channel for adjusting the temperature of the placed substrate G, and the like. Are built in (both not shown).

  On the side wall of the chamber 2, a loading / unloading port 21 for loading and unloading the substrate G is formed, and a gate valve 22 for opening and closing the loading / unloading port 21 is provided. When the loading / unloading port 21 is opened, the substrate G is loaded into and unloaded from the chamber 2 by a transfer mechanism (not shown).

  In the bottom wall of the chamber 2 and the susceptor 20, a plurality of insertion holes 23 penetrating them are formed, for example, at the peripheral edge position of the susceptor 20 with a gap. In each insertion hole 23, a lifter pin 24 that supports and lifts the substrate G from below is inserted so as to protrude and retract with respect to the substrate placement surface of the susceptor 20. A flange 25 is formed below each lifter pin 24, and one end (lower end) of an extendable bellows 26 provided so as to surround the lifter pin 24 is connected to each flange 25. The other end (upper end) of the bellows 26 is connected to the bottom wall of the chamber 2. Thereby, the bellows 26 expands and contracts following the lifting and lowering of the lifter pin 24 and seals the gap between the insertion hole 23 and the lifter pin 24.

  A shower head 27 that discharges a processing gas supplied by a processing gas supply mechanism 3 to be described later into the chamber 2 and functions as an upper electrode is provided on the upper or upper wall of the chamber 2 so as to face the susceptor 20. Yes. The shower head 27 is grounded, and a gas diffusion space 28 for diffusing the processing gas is formed therein. A plurality of processing gases for discharging the processing gas diffused in the gas diffusion space 28 to the lower surface or the surface facing the susceptor 20 are formed. A discharge hole 29 is formed.

  The exhaust means 4 includes an exhaust pipe 41 serving as an exhaust path connected to, for example, the bottom wall of the chamber 2, an exhaust device 42 connected to the exhaust pipe 41 and exhausting the inside of the chamber 2 through the exhaust pipe 41, A pressure adjusting valve 43 for adjusting the pressure in the chamber 2 is provided upstream of the connection portion of the pipe 41 with the exhaust device 42. The exhaust device 42 has a vacuum pump such as a turbo molecular pump, and is configured to be able to evacuate the chamber 2 to a predetermined reduced pressure atmosphere. A plurality of exhaust pipes 41 are provided at intervals in the circumferential direction of the chamber 2, and a plurality of exhaust devices 42 and pressure adjustment valves 43 are provided corresponding to the respective exhaust pipes 41.

  The plasma generation mechanism 5 includes a power supply line 51 that is connected to the base material 20 a of the susceptor 20 and supplies high-frequency power, and a matching unit 52 and a high-frequency power supply 53 that are connected to the power supply line 51. For example, high frequency power of 13.56 MHz is supplied from the high frequency power supply 53 to the susceptor 20, whereby the susceptor 20 functions as a lower electrode and is configured to form a pair of parallel plate electrodes together with the shower head 27. The susceptor 20 and the shower head 27 constitute a part of the plasma generation mechanism 5.

The processing gas supply mechanism 3 is a processing gas supply source for supplying processing gas, for example, He gas, HCl gas, and SF ₆ gas, into the chamber 2, for example, He gas supply source 30, HCl gas supply source 31, and SF ₆ gas. A plurality of, for example, two process gas tanks 33, 34 for temporarily storing or filling process gas from a supply source 32, He gas supply source 30, HCl gas supply source 31 and SF ₆ gas supply source 32; The processing gas from the gas supply source 30, HCl gas supply source 31 and SF ₆ gas supply source 32 is fed into the processing gas tanks 33 and 34 and the chamber 2, and the processing gas stored in the processing gas tanks 33 and 34 is supplied to the chamber 2. And a processing gas flow member 35 made of piping or the like to be fed inside. The processing gas flow member 35 includes a first processing gas flow path 36 connected to the He gas supply source 30, HCl gas supply source 31, SF ₆ gas supply source 32, and the chamber 2, two processing gas tanks 33, 34, each having a second processing gas flow path 37, 38 branched from the first processing gas flow path 36 and connected to the processing gas tanks 33, 34.

The first processing gas flow path 36 is branched into three so as to correspond to three processing gas supply sources (He gas supply source 30, HCl gas supply source 31 and SF ₆ gas supply source 32). The upper surface of the shower head 27 has supply source connection channels 36 a, 36 b, 36 c connected to the supply source on one side or upstream side, and the other end or downstream end communicates with the gas diffusion space 28. It is connected to the. The first processing gas channel 36 is provided with mass flow controllers 36d, 36e, 36f and valves 36g, 36h, 36i for adjusting the flow rate of the processing gas in the supply source connection channels 36a, 36b, 36c, respectively. Valves 36s and 36t are also provided at, for example, one end and the other end on the other side of the branching portion with the second process gas flow paths 37 and 38, respectively.

  The second process gas channels 37 and 38 are branched from the supply source connection channels 36 a, 36 b and 36 c of the first process gas channel 36 from the downstream side, and are connected to the gas diffusion space 28. Connected to the upper surface of the head 27, process gas tanks 33 and 34 are connected to the middle part. As a result, the second process gas flow paths 37 and 38 are respectively used to send process gas into the process gas tanks 33 and 34, and to send process gas from the process gas tanks 33 and 34, respectively. The delivery channels 37b and 38b are separately provided. Valves 37c and 38c and valves 37d and 38d are provided in the inflow channels 37a and 38a and the outflow channels 37b and 38b, respectively, and the processing gas tanks 33 and 34 are pressure gauges for measuring the internal pressure, respectively. 33a and 34a are provided.

  A bypass flow path 39 such as a pipe is connected to the processing gas flow member 35, for example, the first processing gas flow path 36 and a part, for example, one of the plurality of exhaust pipes 41, and the processing gas The processing gas in the flow member 35 can be exhausted by the exhaust means 4 through the bypass channel 39. The bypass passage 39 is connected between the pressure adjustment valve 43 of the exhaust pipe 41 and the exhaust device 42, and the processing gas discharged from the bypass passage 39 is exhausted by closing the pressure adjustment valve 43. It is configured so that it can be prevented from flowing into the chamber 2 via 41.

  Each component of the plasma etching apparatus 1 is controlled by a process controller 90 having a microprocessor (computer). The process controller 90 includes a user interface 91 including a keyboard for a process manager to input commands to manage the plasma etching apparatus 1, a display for visualizing and displaying the operating status of the plasma etching apparatus 1, and the like. A storage unit 92 storing a recipe in which a control program for realizing the processing executed by the plasma etching apparatus 1 under the control of the process controller 90 and processing condition data is stored is connected. Then, if necessary, an arbitrary recipe is called from the storage unit 92 by an instruction from the user interface 91 and is executed by the process controller 90, so that the process in the plasma etching apparatus 1 can be performed under the control of the process controller 90. Done. The recipe may be stored in a computer-readable storage medium such as a CD-ROM, a hard disk, or a flash memory, or may be received from another device, for example, via a dedicated line as needed. It is also possible to transmit and use.

  More specifically, each valve 36g, 36h, 36i, 36s, 36t, 37c, 37d, 38c, 38d, 39a of the processing gas supply mechanism 3 is a unit controller 93 (control unit) connected to the process controller 90. It is the structure controlled by. Then, if necessary, the process controller 90 calls an arbitrary recipe from the storage unit 92 and controls the unit controller 93 in accordance with an instruction from the user interface 91 or the like.

  In the plasma etching apparatus 1 configured as described above, the substrate G is illustrated in a state in which the loading / unloading port 21 is opened by the gate valve 22 while the inside of the chamber 2 is maintained at a predetermined degree of vacuum by the exhaust unit 4. When the transfer mechanism 21 does not carry it in from the loading / unloading port 21, each lifter pin 24 is raised, and the substrate G is received and supported by each lifter pin 24 from the transfer mechanism. When the transfer mechanism exits from the loading / unloading port 21 to the outside of the chamber 2, the loading / unloading port 21 is closed by the gate valve 22, and each lifter pin 24 is lowered to be immersed in the substrate mounting surface of the susceptor 20. To be placed.

Next, the processing gas is supplied into the chamber 2 by the processing gas supply mechanism 3. Here, the processing gas is supplied by supplying He gas, HCl gas, and SF ₆ gas previously filled in the processing gas tank 33 from the He gas supply source 30, the HCl gas supply source 31, and the SF ₆ gas supply source 32 with a valve. This is done by opening and releasing 37d.

Since the inside of the chamber 2 is exhausted by the exhaust means 4, the pressure in the chamber 2 is reduced with the passage of time only by supplying the processing gas filled in the processing gas tank 33. Accordingly, the valves 36 s, 36 t, 36 g, 36 h, 36 i are opened when the processing gas filled in the processing gas tank 33 is supplied or immediately after the supply, and the He gas supply source 30, the HCl gas supply source 31 and the SF ₆ gas supply source 32 are opened. The flow rate of He gas, HCl gas and SF ₆ gas from gas is adjusted by the mass flow controllers 36d, 36e, and 36f and supplied into the chamber 2, and the pressure inside the chamber 2 is set by the pressure control valve 43, for example, 23.3 Pa (0 .175 Torr). Thereby, the set pressure in the chamber 2 can be quickly held. Further, the processing gas passage member 35, the He gas supply source 30, HCl gas supply source 31 and the SF ₆ gas supply source 32 and the first process gas channel 36 connected to the chamber 2, the first processing Since the second processing gas flow paths 37 and 38 are branched from the gas flow path 36 and connected to the processing gas tanks 33 and 34, respectively, the He gas supply source 30, the HCl gas supply source 31, and the SF ₆ gas supply source are configured. The He gas, HCl gas and SF ₆ gas from 32 can be supplied into the chamber 2 through the first process gas flow path 36 in a short time without passing through the process gas tanks 33 and 34 which are large spaces. This makes it possible to further speed up the pressure holding in the chamber 2.

  In this state, a DC voltage is applied to the electrostatic adsorption mechanism built in the susceptor 20 to attract the substrate G to the susceptor 20, and the temperature of the substrate G is adjusted by the temperature adjustment mechanism built in the susceptor 20. Then, high-frequency power is applied to the susceptor 20 from the high-frequency power supply 53 via the matching unit 52, and a high-frequency electric field is generated between the susceptor 20 as the lower electrode and the shower head 27 as the upper electrode, thereby processing in the chamber 2. The gas is turned into plasma. The substrate G is etched by the processing gas plasma.

When the substrate G is etched, the application of the high frequency power from the high frequency power supply 53 is stopped. Next, the valves 36g, 36h and 36i are closed to stop the supply of He gas, HCl gas and SF ₆ gas from the He gas supply source 30, HCl gas supply source 31 and SF ₆ gas supply source 32, and exhaust means 4, the processing gas in the chamber 2 and in the first processing gas flow path 36 or the processing gas flow member 35 is discharged. Then, the adsorption of the substrate G by the electrostatic adsorption mechanism is released, and then the processing gas is supplied into the chamber 2, and the susceptor 20 is held in a state where the inside of the chamber 2 is maintained at a set pressure, for example, 26.7 Pa (0.2 Torr). A high-frequency power is applied to the substrate to turn the processing gas into plasma, and the substrate G is subjected to charge removal processing. Here, the supply of the processing gas is performed by opening the valve 38d and opening the valves 36s, 36t, and 36g together with releasing the He gas previously filled in the processing gas tank 34 from the He gas supply source 30. The flow rate of He gas from the He gas supply source 30 is adjusted by the mass flow controller 36d so as to be maintained at the set pressure, and then fed. As a result, the pressure in the chamber 2 can be instantaneously held at the set pressure or in the vicinity of the set pressure, and the charge removal processing of the substrate G can be performed quickly.

  After performing the charge removal process on the substrate G, the process gas in the chamber 2 and the first process gas flow path 36 or the process gas flow member 35 is discharged by the exhaust means 4. Next, the loading / unloading port 21 is opened by the gate valve 22 and the lifter pin 24 is raised to separate the substrate G from the susceptor 20 upward. Thereafter, when a transport mechanism (not shown) enters the chamber 2 from the loading / unloading port 21, the lifter pin 24 is lowered and the substrate G is transferred to the transport mechanism. Thereafter, the substrate G is carried out of the chamber 2 from the carry-in / out port 21 by the carrying mechanism.

  The processing gas tanks 33 and 34 are refilled with the processing gas when the substrate G is loaded and unloaded. First, the valve 37c is opened and the processing gas tank 33 is filled with the processing gas. At this time, the valves 37d, 38c, and 36s are closed in order to prevent the processing gas from flowing into the processing gas tank 34 and the chamber 2. When the processing gas tank 33 is completely filled with the processing gas, the valve 37c is closed, and the valve 39a is opened to discharge the processing gas remaining in the first processing gas channel 36 and the inflow channels 37a and 38a. . At this time, the pressure adjustment valve 43 of the exhaust pipe 41 to which the bypass channel 39 is connected is closed so that the processing gas does not flow into the chamber 2. When the discharge of the processing gas is completed, the processing gas tank 34 is charged in the same manner as the processing gas tank 33 is filled. After the filling is completed, the first processing gas channel 36 and the inflow channel 37a, The processing gas remaining in 38a is similarly discharged. The processing gas may be filled first in the processing gas tank 34.

In the present embodiment, through the processing gas passage member 35, the processing gas supply source, for example, process gas from the He gas supply source 30, HCl gas supply source 31 and the SF ₆ gas supply source 32, for example He gas, HCl gas and Since the processing gas tanks 33 and 34 are temporarily filled with SF ₆ gas and the processing gas filled in the processing gas tanks 33 and 34 is supplied into the chamber 2 to perform processing including plasma etching of the substrate G, the capacity of the chamber 2 is increased. Even if it is large, it is possible to supply a processing gas at a set pressure in the chamber 2 in a short time, thereby shortening the processing time.

  In this embodiment, the process gas tank 33 is used to fill the process gas supplied during the plasma etching process, and the process gas tank 34 is used to fill the process gas supplied after the plasma etching process. May be used interchangeably. In the present embodiment, the second processing gas flow paths 37 and 38 are individually branched from the first processing gas flow path 36, but the first processing is performed in a state where one ends thereof are joined together. You may branch and provide from the gas flow path 36. FIG. Alternatively, the second processing gas flow paths 37 and 38 are connected to the other part of the chamber 2, for example, the side wall instead of the upper surface of the shower head 27, and the processing gas is fed into the chamber 2 without passing through the shower head 27. You may comprise. Furthermore, in this embodiment, the delivery channels 37b and 38b of the second process gas channels 37 and 38 are connected to the chamber 2, respectively, but they may be connected to the first process gas channel 36. . Further, in the present embodiment, two processing gas tanks 33 and 34 are used in order to continuously perform two types of processes using different processing gases. However, when only one type of process is used, the number of processing gas tanks is one. In the case where three or more processes are continuously performed, three or more process gas tanks may be used.

  Next, using the plasma etching apparatus 1, the processing gas tank 33 is filled with a processing gas at a predetermined pressure (hereinafter referred to as a filling time), and the processing gas filled in the processing gas tank 33 and the processing gas supply sources 30, 31. , 32 was supplied into the chamber 2, and the time until the pressure in the chamber 2 was stabilized to the set pressure (hereinafter referred to as the stable time) was measured. As shown in FIG. 2, the plasma etching apparatus 1 used here is one in which the second process gas flow paths 37 and 38 of the process gas supply mechanism 3 are modified into a simple structure. Each of the second processing gas flow paths 37 and 38 here has one end branched from the first processing gas flow path 36 and the other end connected to the processing gas tanks 33 and 34, and a valve 37 z and a middle part. 38z is provided. Accordingly, the second processing gas flow paths 37 and 38 here are a flow path for guiding the processing gas from the processing gas supply sources 30, 31 and 32 to the processing gas tanks 33 and 34, respectively, and the processing gas tanks 33 and 34. It also serves as a flow path for guiding the inside processing gas into the chamber 2.

He gas is a process gas flow rate ratio of HCl gas and SF ₆ gas 2: 1: 1, total flow rate was set to 5 slm, volume _{l 0} of the chamber 2 is 2310L, volume _{l 1} processing tank 33 3l, chamber 2 set pressure _{P 0} of the inner is a 23.3Pa (0.175Torr), if the pressure _{P 1} of the processing gas to be charged into the processing tank 33 is 26.7 kPa (200 Torr) (example 1), 53.3kPa (400Torr ) (Example 2) and 80.0 kPa (600 Torr) (Example 3). As a comparative example, the stabilization time was measured when only the processing gas from the processing gas supply sources 30, 31, and 32 was supplied into the chamber 2 without using the processing gas tank 33. The measurement results are shown in Table 1.

  As shown in Table 1, in Examples 1, 2, and 3, it was confirmed that the stabilization time was shorter than in the comparative example. That is, it was confirmed that the use of the plasma etching apparatus 1 can shorten the stabilization time as compared with the case of using a conventional plasma etching apparatus that does not use the processing gas tank 33.

Further, the filling time is shorter as the pressure of the processing gas filled in the processing gas tank 33 is lower. However, the stabilization time is shorter as the pressure of the processing gas filled in the processing gas tank 33 is higher, and is 80.0 kPa. Was confirmed to be almost halved compared to 26.7 kPa. This is because when the pressure of the processing gas filled in the processing gas tank 33 is low, the processing gas supplied from the processing gas supply sources 30, 31, 32 into the chamber 2 passes through the second processing gas channel 37. This may be caused by the flow into the processing gas tank 33. Therefore, when the change in pressure in the processing gas flow member 35 before and after the start of supply of the processing gas from the processing gas tank 33 into the chamber 2 was measured, the processing gas flow immediately after the start of the processing gas supply from the processing gas tank 33 into the chamber 2 was measured. pressure in the flow member 35, as shown in arrow in FIG. 3 (a), when the pressure P ₁ of the processing gas to be charged into the processing tank 33 is 26.7 kPa, stability during processing gas through member close to the pressure in 35 29.9kPa (224Torr), as shown in the arrow in FIG. 3 (b), the pressure _{P 1} of the processing gas to be charged into the processing tank 33 is less than 29.9KPa, for example 17.9KPa ( 135 Torr), the pressure is lower than the pressure in the processing gas flow member 35 at the time of stabilization, and the processing gas tank 33 is filled as shown by the arrow in FIG. The pressure _{P 1} of the process gas is greater than 29.9KPa, for example in the case of 53.3kPa it has resulted greater than the pressure of the stable state of the processing gas through member 35. Further, when the pressure _{P 1} of the processing gas to be charged into the processing tank 33 is 17.9kPa is stabilization time compared with the case of 26.7kPa is long enough 2 seconds, i.e., without the use of process gas tank 33 In addition, the result was longer than the stabilization time when only the processing gas from the processing gas supply sources 30, 31, and 32 was supplied into the chamber 2. Therefore, the second process gas flow path 37 (38) has a flow path for sending the process gas into the process gas tank 33 (34) and a flow path for sending the process gas from the process gas tank 33 (34). In this case, if the pressure of the processing gas filled in the processing gas tank 33 is made higher than the pressure in the processing gas flow member 35, the processing gas can be prevented from flowing into the processing gas tanks 33 and 34. It is considered that the stabilization time can be shortened as the pressure of the processing gas filled in the processing gas tank 33 is increased.

Next, another embodiment of the plasma etching apparatus will be described.
FIG. 4 is a schematic sectional view of a plasma etching apparatus as another embodiment of the gas processing apparatus according to the present invention.

  As shown in FIG. 4, the plasma etching apparatus 1 ′ deforms the inflow passages 37 a and 38 a and the bypass passage 39 of the second processing gas passages 37 and 38 of the processing gas supply mechanism 3 in the plasma etching apparatus 1. Therefore, the same parts as those of the plasma etching apparatus 1 are denoted by the same reference numerals and the description thereof is omitted. The flow path 37a '(38a') to the processing gas tank 33 (34) of the second processing gas flow path 37 '(38') of the processing gas supply mechanism 3 'in the plasma etching apparatus 1' has one end or The upstream end is further branched from introduction branch channels 37i, 37j, and 37k provided to branch from the upstream side of the mass flow controllers 36d, 36e, and 36f of the supply source connection channels 36a, 36b, and 36c, respectively. The branch inlet / outlet flow paths 37e, 37f, 37g (38e, 38f, 38g) and the other end or downstream end of the branch inlet / outlet flow paths 37e, 37f, 37g (38e, 38f, 38g) join together. And a confluence flow path 37h (38h) connected to the processing gas tank 33 (34). The introduction branch flow paths 37i, 37j, and 37k are respectively provided with mass flow controllers 37l, 37m, and 37n, and the branch introduction flow paths 37e, 37f, 37g, 38e, 38f, and 38g are valves 37o, 37p, and 37q, respectively. , 38o, 38p, 38q.

  A bypass flow path 39 ′ in the processing gas supply mechanism 3 ′ is branched on one side or upstream side and connected to the merging / inflow flow paths 37h and 38h, and valves 39b and 39c are provided at the respective branch portions.

In the processing gas supply mechanism 3 ′ configured as described above, the He gas supply source 30, the HCl gas supply source 31, and the SF ₆ gas supply source 32 enter the chamber 2 through the first processing gas flow member 35. In parallel with the supply of the He gas, HCl gas, and SF ₆ gas, the second process gas flow path 37 ′ (38 ′) is provided from the He gas supply source 30, the HCl gas supply source 31, and the SF ₆ gas supply source 32. The processing gas tank 33 (34) can be filled with He gas, HCl gas and SF ₆ gas, and each mass flow controller 36d, 36e, 36f, 37l, 37m, 37n and each valve 36g, 36h, 36i can be filled. , 37o (38o), 37p (38p), 37q (38q), the flow rate of He gas supplied to the chamber 2 and the flow of HCl gas The amount, SF ₆ gas flow rate, the flow rate of He gas fed to the processing tank 33 (34), the flow rate of HCl gas, may be adjusted individually SF ₆ gas flow rate. Further, the bypass flow path 39 'is branched and connected to the merging and feeding flow paths 37h and 38h, so that the processing gas in the second processing gas flow path 37' including the merging and feeding flow path 37h is merged and sent. The processing gas in the second processing gas channel 38 'including the inlet channel 38h can be discharged separately. Accordingly, the processing gas of a predetermined type and ratio filled in the processing gas tank 33 (34) in advance and the processing gas of a predetermined type and ratio from the processing gas supply sources 30, 31, and 32 are supplied into the chamber 2. In parallel with performing a certain process, the processing gas tank 34 (33) can be filled with a processing gas of a type and / or ratio different from a predetermined type and / or ratio used in the next process. Thus, it is possible to continuously perform three or more types of processes having different types and ratios of processing gases to be used.

  In the present embodiment, the branch-in flow paths 37e, 38e, 37f, 38f, 37g, and 38g are branched from the supply source connection flow paths 36a, 36b, and 36c via the introduction branch flow paths 37i, 37j, and 37k. However, the supply source connection flow paths 36a, 36b, and 36c may be directly branched without passing through the introduction branch flow paths 37i, 37j, and 37k. In this case, a mass flow controller can be provided in each of the branching / inflow channels 37e, 38e, 37f, 38f, 37g, and 38g.

FIG. 5 is a view showing a modification of the supply source connection flow path of the processing gas supply mechanism 3 provided in the plasma etching apparatus 1.
In order to fill the processing gas tanks 33 and 34 into the processing gas tanks 33 and 34 from the processing gas supply sources 30, 31, and 32 in a short time, a supply source connection channel is provided so that the processing gas can be sent to the processing gas tanks 33 and 34 at a large flow rate. The mass flow controllers and valves provided in 36a, 36b, and 36c are preferably configured to be capable of handling a large flow rate. However, in order to improve the processing quality of the substrate G, it is necessary to precisely adjust the flow rate of the processing gas supplied from the processing gas supply sources 30, 31, 32 into the chamber 2, and the supply source connection flow paths 36a, 36b If a mass flow controller capable of handling a large flow rate is provided at 36c, the flow rate cannot be finely adjusted, and the processing quality of the substrate G may be degraded. Therefore, as shown in FIG. 5, when the processing gas from the processing gas supply sources 30, 31, 32 is stored or filled in the processing gas tanks 33, 34 in the respective supply source connection flow paths 36a, 36b, 36c. The storage flow paths 36j, 36k, 36l to be branched and the supply flow paths 36m, 36n, 36o that flow when the processing gas from the processing gas supply sources 30, 31, 32 is supplied into the chamber 2 are branched. A mass flow controller 36p and a valve 36q that can handle a large flow rate are provided in the storage flow paths 36j, 36k, and 36l, respectively, and each of the supply flow paths 36m, 36n, and 36o can be finely adjusted. The mass flow controller 36r and the valve 36s may be provided. With such a configuration, it is possible to precisely adjust the flow rate of the processing gas supplied into the chamber 2 while filling the processing gas tanks 33 and 34 in a short time.

  The preferred embodiment of the present invention has been described above, but the present invention is not limited to the above embodiment, and various modifications can be made. In the above embodiment, the example applied to the RIE type capacitively coupled parallel plate plasma etching apparatus that applies high frequency power to the lower electrode has been described. However, the present invention is not limited to this, and other plasma processing apparatuses such as ashing, CVD film formation, etc. Further, the present invention can be applied to any gas apparatus other than the plasma processing apparatus in which an object to be processed such as a substrate is accommodated in a processing container and gas is processed. Moreover, although the said embodiment demonstrated the example applied to the process of the glass substrate for FPD, it is applicable not only to this but to the process of the board | substrates in general, such as a semiconductor substrate, and to the process of to-be-processed objects other than a board | substrate. Is also applicable.

It is a schematic sectional drawing of the plasma etching apparatus which is one Embodiment of the gas processing apparatus which concerns on this invention. It is a schematic sectional drawing of the plasma etching apparatus used for measurement of the filling time of processing gas, and the stable time at the time of processing gas supply. It is a figure which shows the measurement result of the filling time of process gas, and the stable time at the time of process gas supply. It is a schematic sectional drawing of the plasma etching apparatus which is other embodiment of the gas processing apparatus which concerns on this invention. It is a figure which shows the modification of the supply source connection flow path of the process gas supply mechanism provided in the plasma etching apparatus.

Explanation of symbols

1, 1 ': Plasma etching device (gas processing device)
2: Chamber (processing container)
3, 3 ': Process gas supply mechanism 4: Exhaust means 5: Plasma generation mechanism 41: Exhaust pipe (exhaust passage)
42: Exhaust device 30: He gas supply source (process gas supply source)
31: HCl gas supply source (process gas supply source)
32: SF ₆ gas supply source (process gas supply source)
33, 34: Process gas tank 35: Process gas flow member 36: First process gas flow path 36a, 36b, 36c: Supply source connection flow path 36j, 36k, 36l: Storage flow path 36m, 36n, 36o: Supply Flow path 37, 37 ', 38, 38': Second process gas flow path 37a, 37a ', 38a, 38a': Inflow path 37b, 38b: Outlet path 39, 39 ': Bypass path 90 : Process controller 91: User interface 92: Storage unit 93: Unit controller (control unit)
G: Glass substrate (object to be processed)

Claims (8)

A processing container for storing an object to be processed;
A processing gas supply mechanism for supplying a processing gas into the processing container;
Exhaust means for exhausting the inside of the processing container;
A control unit for controlling the processing gas supply mechanism,
A gas processing apparatus for performing a predetermined process on a target object by supplying a processing gas by the processing gas supply mechanism while exhausting by the exhaust means while the target object is accommodated in the processing container. ,
The processing gas supply mechanism includes:
A processing gas supply source for supplying a processing gas into the processing container;
A processing gas tank for temporarily storing processing gas from the processing gas supply source; and
A processing gas flow member for supplying processing gas from the processing gas supply source to the processing gas tank, and supplying processing gas in the processing gas tank into the processing container;
The processing gas is temporarily stored in the processing gas tank from the processing gas supply source, and supplied from the processing gas tank into the processing container, and also supplied from the processing gas supply source into the processing container,
The processing gas flow member includes a first processing gas channel connected to the processing gas supply source and the processing container, a first processing gas channel branched from the first processing gas channel, and connected to the processing gas tank. Two process gas flow paths,
A plurality of the processing gas tanks are provided, and a plurality of the second processing gas flow paths are provided corresponding to the number of the processing gas tanks,
Each of the second processing gas flow paths separately has an inflow path for sending processing gas into the processing gas tank and an outflow path for sending out processing gas from the processing gas tank,
The controller is configured to supply a processing gas from a part of the plurality of processing gas tanks to the processing container via the delivery flow path and from the processing gas supply source via the delivery flow path. A processing gas is stored in the remaining part or all of the plurality of processing gas tanks. The first processing gas flow path includes a storage flow path through which processing gas from the processing gas supply source is stored in the processing gas tank, and processing gas from the processing gas supply source to the processing container. The gas processing apparatus according to claim 1 , further comprising a supply flow channel that is circulated when being supplied to the inside. The exhaust means has a plurality of exhaust passages connected to the processing container, and an exhaust device for exhausting the inside of the processing container through the exhaust passage,
A bypass flow path is connected to the process gas flow member and a part of the plurality of exhaust passages, and the process gas in the process gas flow member is discharged by the exhaust means through the bypass flow path. Configured to be possible,
The gas processing apparatus according to claim 1 or 2 , wherein the exhaust path connected to the bypass flow path is openable and closable upstream of a connection portion with the bypass flow path. A plasma generation mechanism for generating plasma of the processing gas supplied by the processing gas supply mechanism in the processing container;
Wherein the predetermined processing, gas processing device according to any one of claims 1 to 3, characterized in that a plasma treatment using a plasma of a processing gas. A processing gas supply method for supplying a processing gas into the processing container so that a predetermined processing is performed on an object to be processed housed in the processing container,
A processing gas supply source for supplying a processing gas into the processing container; a processing gas tank for temporarily storing processing gas from the processing gas supply source; and a processing gas from the processing gas supply source. Preparing a processing gas flow member for supplying the processing gas to the processing gas tank and supplying the processing gas in the processing gas tank into the processing container;
Process gas is temporarily stored in the process gas tank from the process gas supply source, and supplied from the process gas tank into the process container,
The processing gas flow member includes a first processing gas flow path connected to the processing gas supply source and the processing container, and a first branching from the first processing gas flow path and connected to the processing gas tank. 2 processing gas flow paths,
Supplying a processing gas from the processing gas supply source into the processing container;
A plurality of the processing gas tanks are provided, and a plurality of the second processing gas flow paths are provided corresponding to the number of the processing gas tanks,
Each of the second processing gas flow paths has a separate flow path for sending processing gas into the processing gas tank and a sending flow path for sending processing gas from the processing gas tank. Leave
In parallel with supplying the processing gas from a part of the plurality of processing gas tanks into the processing container via the delivery channel, the plurality of processings from the processing gas supply source via the delivery channel. A processing gas supply method, wherein the processing gas is stored in a part or all of the remaining part of the gas tank. A processing gas supply method for supplying a processing gas into the processing container so that a predetermined processing is performed on an object to be processed housed in the processing container,
A processing gas supply source for supplying a processing gas into the processing container; a processing gas tank for temporarily storing processing gas from the processing gas supply source; and a processing gas from the processing gas supply source. Preparing a processing gas flow member for supplying the processing gas to the processing gas tank and supplying the processing gas in the processing gas tank into the processing container;
Process gas is temporarily stored in the process gas tank from the process gas supply source, and supplied from the process gas tank into the process container,
The processing gas flow member includes a first processing gas flow path connected to the processing gas supply source and the processing container, and a first branching from the first processing gas flow path and connected to the processing gas tank. 2 processing gas flow paths,
Supplying a processing gas from the processing gas supply source into the processing container;
The second processing gas flow path is configured separately including an inflow path for feeding a processing gas into the processing gas tank and a delivery flow path for sending out the processing gas from the processing gas tank,
A plurality of the processing gas supply sources are provided so as to supply different types of processing gases, and the first processing gas flow paths are branched into a plurality of numbers corresponding to the number of the processing gas supply sources. Having a supply source connection channel connected to the processing gas supply source,
The inflow channel of the second process gas channel is branched from each of the supply source connection channels of the first process gas channel;
After supplying a processing gas of a predetermined type and ratio from the processing gas tank into the processing container via the delivery flow path, the first processing gas flow from a part or all of the plurality of processing gas supply sources In parallel with supplying the processing gas having the predetermined type and ratio into the processing container through a channel, the processing gas supply source is partially or entirely from the plurality of processing gas supply sources through the inlet channel. A processing gas supply method, wherein a processing gas of a type and / or ratio different from the predetermined type and ratio is stored in a processing gas tank. A processing gas supply method for supplying a processing gas into the processing container so that a predetermined processing is performed on an object to be processed housed in the processing container,
A processing gas supply source for supplying a processing gas into the processing container; a processing gas tank for temporarily storing processing gas from the processing gas supply source; and a processing gas from the processing gas supply source. Preparing a processing gas flow member for supplying the processing gas to the processing gas tank and supplying the processing gas in the processing gas tank into the processing container;
Process gas is temporarily stored in the process gas tank from the process gas supply source, and supplied from the process gas tank into the process container,
The processing gas flow member includes a first processing gas flow path connected to the processing gas supply source and the processing container, and a first branching from the first processing gas flow path and connected to the processing gas tank. 2 processing gas flow paths,
Supplying a processing gas from the processing gas supply source into the processing container;
A plurality of the processing gas tanks are provided, and a plurality of the second processing gas flow paths are provided corresponding to the number of the processing gas tanks,
Each of the second processing gas flow paths has a separate flow path for sending processing gas into the processing gas tank and a sending flow path for sending processing gas from the processing gas tank. ,
A plurality of the processing gas supply sources are provided so as to supply different types of processing gases, and the first processing gas flow paths are branched into a plurality of numbers corresponding to the number of the processing gas supply sources. Having a supply source connection channel connected to the processing gas supply source,
The inflow channel of the second process gas channel is branched from each of the supply source connection channels of the first process gas channel;
A processing gas having a predetermined type and ratio is supplied from a part of the plurality of processing gas tanks into the processing container via the delivery channel, and the first or second part of the plurality of processing gas supply sources is used to supply the processing gas. In parallel with supplying the processing gas of the predetermined type and ratio into the processing container via one processing gas flow path, the inflow from a part or all of the plurality of processing gas supply sources A processing gas supply method comprising storing a processing gas having a type and / or ratio different from the predetermined type and / or ratio in the remaining part or all of the plurality of processing gas tanks via a path. A computer-readable storage medium storing a control program that runs on a computer,
8. The computer-readable storage medium, wherein the control program causes a computer to control the processing apparatus so that the processing gas supply method according to any one of claims 5 to 7 is performed at the time of execution. .

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