TW201036099A - Substrate treating apparatus and method - Google Patents

Abstract

Provided are a substrate treating apparatus and method, which vacuum-absorb a substrate. An inner space of a housing is maintained at a second pressure by a pipe maintained at a first pressure. The interior of a vacuum hole of a vacuum chuck is maintained at a third pressure. A substrate is vacuum-absorbed by a difference between the third pressure and the second pressure. A gas is supplied into a first line connected to the vacuum hole, or the first line communicates with the inner space of the housing to maintain the difference between the third pressure and the second pressure within a previously set range, thereby to unload the substrate. Therefore, the absorption between the substrate and the vacuum chuck can be increased, and also, a process speed can be improved.

Description

201036099 VI. Description of the Invention: [Technical Field] The present invention relates to a substrate processing apparatus and method, and more particularly to a substrate processing apparatus and method for a vacuum adsorption substrate. [Prior Art] 0 In the process of fabricating a semiconductor device, a photolithography process using a photoresist is indispensable. The photoresist comprises an organic photosensitive polymer or a mixture of a photosensitive material and a polymer. An exposure and etching process is performed on the substrate to form a photoresist pattern, and then, while etching the substrate or a layer formed on the substrate, a pattern corresponding to the photoresist pattern is transferred onto the substrate. This photopolymer is called a photoresist, and the process of forming a fine pattern using a light-to-beauty plate is called a lithography process. In a semiconductor process, as a masking photoresist in a process of forming a fine circuit pattern (such as a pipeline or space pattern) or an ion implantation process (immediately in the imPlantation) process, mainly by * The ashing process (ashingpr〇cess) is removed from the substrate. ' #In the conventional ashing process, an electrostatic chuck is used (in which a substrate is fixed using a simple clamp or electrostatic force). However, due to the narrower line width of the substrate, and the process 曰 subtle, it is difficult to use - the substrate is improved by the substrate clamping device 201036099. Therefore, production efficiency may be lowered due to poor quality. Alternatively, a vacuum chuck can be used to clamp the substrate. However, it is difficult to maintain a vacuum during processing. SUMMARY OF THE INVENTION The present invention discloses a substrate processing apparatus and method that sandwich a substrate using a pressure differential. The present invention also provides a substrate processing apparatus and method which can increase the adsorption force between a substrate and a vacuum chuck. The present invention also provides a substrate processing apparatus and method for controlling the suction between a substrate and a vacuum chuck according to the area of the substrate. The present invention also provides a substrate processing apparatus and method which can easily control the pressure difference. The present invention also provides a substrate processing apparatus and method which can improve the yield and quality of the substrate.

Where the tube is discharged to the outside of the first tube, the tube is connected to a pressure, which is disposed at a pressure within a first position 3 of the tube; a tube valve is disposed between the housing and the housing One of the second digits 201036099 is set to open and close the tube or to control the flow of a gas into the tube; and a vacuum line includes a first line to which one end of the first line is connected, and The other end is connected to the tube between the first position and the second position, and a first valve that opens and closes the first line. In some embodiments, the vacuum line may further include: a second line, one end of which is connected to the first line between the vacuum hole and the first valve, and the other end is connected to the outer casing and the first A second position is connected to the tube; and a second valve is disposed in the second line to open and close the second line. In other embodiments, the vacuum line may further include: a third line having one end connected to the first line between the vacuum hole and the first valve, and the other end connected to a gas supply for supplying a gas a source component to supply a gas to the first line; and a third valve disposed in the third line to open and close the third line. In another embodiment of the present invention, the substrate processing apparatus includes: an outer casing including an inner space; first and second vacuum chucks, wherein the vacuum holes for vacuum adsorbing a substrate are respectively defined in the top surface thereof, The first and second vacuum chucks are spaced apart from each other in the inner space'; a tube through which the gas in the inner space is discharged to the outside, the tube is connected to the outer casing; a vacuum pump arranged at a first position of the tube to control a pressure in the internal space; a tube valve disposed in the second position between the first position 7 201036099 and the outer casing to open and close The tube or the flow rate for controlling the flow of a gas into the tube; a first line having one end connected to the vacuum holes of the first vacuum chuck and the other end connected to the first position and the second position And a branch line connected to the first line, the branch line is connected to the vacuum holes of the second vacuum chuck; a first valve disposed at the first position between the branch position and the manifold In the pipeline, the a valve opens and closes the first line 'wherein the branch position, the sub-line is a first line from a hai; an auxiliary valve is disposed between the branch position and the vacuum holes of the first vacuum chuck In the first line, a 'auxiliary valve opens and closes the first line; and a branch valve' is disposed in the branch line, the branch valve opens and closes the branch line. In some embodiments, the substrate processing apparatus may further comprise a pipeline, one end of which is connected to the first pipeline between the branch position and the first valve, and the other end is connected to the outer casing. The first position is connected to the tube; and a second valve is disposed in the second line 'the second valve opens and closes the second line. In other embodiments, the substrate processing apparatus may further include: a third pipeline having one end connected to the first pipeline between the branch position and the first valve, and the other end connected to a gas supplying a gas a source component is supplied to supply the gas into the first line; and a third valve is disposed in the third line command, the third valve opening and closing the third line. 201036099 In still other specific embodiments of the present invention, a substrate processing method includes using a substrate processing apparatus, and the substrate processing apparatus includes: an outer casing including an inner space; a vacuum chuck, wherein the vacuum hole is limited to In a top surface, the vacuum chuck is disposed in the inner space to vacuum adsorb a substrate; a tube, the gas in the inner space is discharged to the outside through the tube, the tube is connected to the outer casing; a vacuum pump, Arranging in a first position 0 of the tube to control a pressure in the inner space; a tube valve disposed between the first position and the outer casing at a second position of the tube, according to the The pressure of the internal space opens and closes the tube, or controls the flow of gas into the tube; and a vacuum line includes a first line, one end of the first line is connected to the vacuum hole, and the other end is connected to the first a connection between the position and the second position to the tube, and a first valve that opens and closes the first line, the 2-plate processing method includes; when the substrate passes the internal space Maintaining a first pressure between the first position and the second position, and partially opening the tube valve to maintain the pressure in the internal space at a pressure greater than - the second pressure of the first pressure; and opening the The second valve μ maintains the pressure in the vacuum hole at a third pressure lower than the second pressure, thereby vacuum-adsorbing the substrate onto the vacuum chuck. In some embodiments, the substrate processing method The method further includes supplying a household gas into the internal space to process the substrate when the substrate is vacuum-adsorbed on the vacuum chuck. In another embodiment, the vacuum line may further include: a second line, one end of which is connected to the first line between the vacuum hole and the first valve, and the other end is connected to the outer casing and the first Connecting between the two positions to the tube; and a second valve disposed in the second line to open and close the second line, wherein after the substrate processing is completed, it further includes opening the second valve to Maintaining the difference between the third pressure and the second pressure within a previously set range 'by thereby unloading the substrate from the vacuum chuck. In still other specific embodiments, the vacuum line may further include: a third line, one end of which is connected between the vacuum hole and the first valve to the first line and the other end is connected to a gas supply a gas supply source member 'to supply a gas to the first line 'and a second valve' disposed in the third line to open and close the third line, wherein the unloading of the substrate further comprises opening the first The three valves supply a gas to the first line, thereby maintaining the difference between the third pressure and the second pressure within the previously set range. In further embodiments, unloading the substrate can include closing the tube valve. In still other embodiments, the third pressure may be greater than or specific to the first pressure. In another embodiment of the present invention, a substrate processing apparatus includes: an outer casing including an inner space; a vacuum chuck, wherein the first vacuum hole is defined in one of the top surfaces 10 of the first region 10 201036099, and a second vacuum hole defined in a second region of the top surface, the second region being different from the first region, the vacuum chuck being disposed in the inner space to vacuum adsorb a substrate; a tube, the inner portion The gas is discharged to the outside through the tube, the tube is connected to the outer casing; a vacuum pump is disposed at a first position of the tube to control a pressure in the inner space; a tube valve is disposed at the a second position between the first position and the outer casing to open and close the tube or to control a flow of gas into the tube; and a vacuum line including a first line and a a first valve, one end of the first line is connected to the first vacuum holes, and the other end is connected to the tube between the first position and the second position, the first valve opens and closes the first line . The first area can include a central area and the second area can include an edge area. In some embodiments, the vacuum line may further comprise: a second line, one end of which is connected to the first line between the first vacuum hole and the first valve, and the other end is connected to the outer casing Connected to the tube between the second positions; a third line, one end of which is connected to the first line between the first vacuum holes and the first valve, and the other end is connected to a gas supply a gas supply source component, • to supply the gas to the first line; a second valve disposed in the second line to open and close the second line; and a third valve, the arrangement In the third line, the third line is opened and closed. 11 201036099 In other embodiments, the vacuum line may further comprise a fourth line, the end of which is connected to the second vacuum holes, and the other end is connected to a pressure control pump, the pressure control pump controls the One of the pressures in the second vacuum hole. The vacuum line may further comprise a fourth tube, a wire connected to the third vacuum holes, and the other end connected to the first line between the first vacuum holes and the first valve; A second pressure controller is disposed in the fourth line to control a pressure within the fourth line. In still other specific embodiments, the vacuum line may further comprise: a fourth tube, a wire, one end of which is connected to the first: vacuum hole, and the other end is connected between the first position and the second position To the tube; and a fourth valve that opens and closes the fourth line. The vacuum line may further include: a fifth line, one end of which is connected to the fourth line between the second vacuum hole and the fourth valve, and the other is located between the outer cymbal and the second position Connected to the tube; a sixth line, one end of which is connected between the second vacuum hole and the fourth valve, the fourth line 'the other end is connected to the - supply-gas first gas supply source part' To supply a gas to the fourth line, a fifth valve disposed in the fifth line to open and close the fifth line; and - a sixth line, which is disposed in the sixth line 'To turn the sixth pipeline on and off. [Embodiment] Hereinafter, a preferred embodiment of the present invention 12 201036099 will be described in more detail with reference to the accompanying drawings. However, the present invention may be embodied in various forms and should not be construed as being limited to the specific embodiments disclosed herein. The embodiments are provided so that this disclosure will be thorough and complete, and the scope of the invention will be fully conveyed by those skilled in the art. Therefore, in the drawings, the dimensions of layers and regions are exaggerated for clarity of illustration. BRIEF DESCRIPTION OF THE DRAWINGS The first drawing is a schematic view of a substrate processing apparatus according to the present invention, and the second drawing is a schematic view of a vacuum chuck according to an embodiment of the present invention. A plurality of ', '' and first figures, a substrate processing apparatus] includes a processing unit 100, a plasma generating unit 200, an exhaust unit 300, and a vacuum line 400. The substrate processing process is performed by the processing unit 1 such as an ashing process. The plasma generating component produces a plasma 'required for the substrate processing process' to supply the generated plasma to the processing component 1'. The exhaust member 300 discharges the remaining process gas and reaction by-products in the processing member 1 to the outside. In particular, the processing component 100 includes a housing n, a vacuum chuck 120, a closure cap 14' and a showerhead 15'. The outer casing 100 includes an internal void (f) U1 in which the ashing process is performed. The opening 112 is defined in one of the side walls of the casing n, and the substrate w is transmitted in and out through the opening 112. The opening ι 2 is opened or closed by an opening/closing member (not shown) such as a slit door. - A venting opening (not shown) is defined in one of the bottom surfaces of the housing 110 13 201036099 to exhaust gas within the interior space n i through a tube 3 10 , as will be explained below. The e-xu vacuum chuck 2020 is disposed in the inner space 111 of the outer casing 1 1 to vacuum-adsorb the substrate W. The vacuum chuck 12 has a disc shape. A vacuum hole 1 22 for vacuum-adsorbing the substrate W is defined in one of the top surfaces of the vacuum chuck. The holes 122 are connected to each other through a hole defined inside the vacuum chuck 120. The vacuum holes 122 are connected to a first line 41 (which will be described later) for sucking air present in a space between the top surface of the vacuum chuck 12 and the bottom surface of the substrate. The vacuum chuck 120 can include at least one heater for heating the stationary substrate w to a previously set processing temperature during processing. A lift pin can be arranged to rise and fall along a hole through which the vacuum chuck 120 is formed vertically, whereby the substrate w is loaded and unloaded on the vacuum chuck 120. A support shaft 123 for supporting the vacuum chuck 120 is disposed on the lower end of the vacuum chuck 12A. A closure cover 140 and the showerhead 150 are disposed above the vacuum suction i 120. The closure cover! It is disposed on an upper portion of the outer casing 11 and is coupled to the outer casing 11 to cover the inner space. The closure cover 140 is coupled to the plasma generating component 200. An intake hole (a plasma 2 产生 generated in the plasma generating member is introduced through the hole) is defined in the closing cover 14A. A sensing space gs is provided for supplying the plasma flowing through the air inlet hole to the shower head 150, which is inside the cover 140. According to this concrete v, there is an inverted funnel shape (inverted sensing space is limited to the closed embodiment, the sensing space GS funnel shape) °

The shower head 150 is disposed between the closing cover U0 and the vacuum chuck 120 to spray the plasma flowing into the sensing space of the closed casing 14 onto the substrate w fixed to the vacuum chuck m. In particular, the lotus nutrient 150 is disposed on the inner upper surface of the outer casing (10) adjacent to the sensing space (2) of the closure cover 14b. A plurality of holes for spraying the plasma are defined on the showerhead. The plasma generating component 200 is disposed on an upper portion of the closure cover 14 and generates the plasma to electrically generate the closure cover 140. The sensing space gS inside. The plasma generating unit 2 includes a magnetron 211, a waveguide 212, an electro-convergence source member 213, and a gas supply source tube 214. The magnetron 211 generates a microwave for generating the plasma, and the waveguide 212 connected to the magnetron 211 induces the microwave source 213 by the microwave generated by the magnetron 211. The gas supply source pipe 214 is connected to the plasma source member 2] to supply a reaction gas necessary for generating the plasma to the electropolymer source member 213. The plasma is generated in the electropolymer source member 213 by the reaction gas supplied from the gas supply source pipe 214 and the microwave generated from the magnetron 211. 15 201036099 The electrical component generated by the source component 213 connected to the closed {丨4G and the 1:::source component 2]3 is supplied to the closed cover sensor Gs, and is sprayed through the shower head 150 to the solid Wander at the vacuum cup! 2 on the substrate w. The exhaust component 300 is disposed below the processing component. The exhaust member 300 controls m in the internal space lu of the casing 11 to discharge - (tetra) gas. The exhausting member 300 includes the tube 3]0 for use in the inner space of the outer casing]

The gas is discharged to the outside and a vacuum pump 320 is used to control the pressure in the inner space 1 of the outer casing 1]. The tube 310 is disposed on a lower portion of the outer casing 11 to form a passage through which gas and reaction by-products in the inner space lu of the outer casing U0 are discharged. A passage of the tube 3 is connected to the vent hole to communicate with the internal space of the outer casing 11 . The vacuum pump 320 is disposed at a first position L1 of the tube 310. The vacuum pump 32 is forcibly sucking the gas in the inner space 111 of the outer casing to control the pressure in the inner space of the outer casing 11). At the same time, the vacuum pump 320 draws the reaction by-products in the inner space 111 of the outer casing u to discharge the sucked reaction by-products to the outside. When the vacuum pump 320 is operated, the inside of the tube 310 is maintained at a first pressure P1. The first position L1 is sufficiently spaced from the outer casing 110. A tube valve 303 is disposed at a second position L2 between the first position L1 and the outer casing 11 〇 16 201036099, and the vacuum pump 32 〇 is disposed at the first position L1. The tube valve 330 opens and closes the tube 31 or controls the flow of gas into the tube 31. The tube valve 330 partially opens the tube 3 10 when the plasma is supplied to the inner space 111 of the outer casing 110 to perform a substrate processing process. When the gas and reaction by-products in the internal space n are discharged through the opening passage of the tube 3, the internal space ln of the outer casing 110 is maintained at a second pressure ❹ P2. The second pressure P2 is greater than the first pressure P1. According to the present embodiment, a bellows type sealing valve can be used as the tube valve 33, which presses and extends in a longitudinal direction according to the injection of air. A vacuum line 400 is coupled to the vacuum holes 122 to control a pressure within the vacuum holes 122. In particular, the true: line 400 includes: a first line 41〇 that connects the vacuum holes 122 to the 3D tube 310, and a second line 420 that connects the first line to the tube 310 a third line 430 that supplies a gas to the first line 41〇; and first to third valves 411, 421, and 431 disposed in the first to third lines 41〇, 42〇, and 430 The first to third pipelines 410, 420, and 430 are turned on and off, respectively. Specifically, one end of the first line 410 is connected to the vacuum holes 122 of the vacuum chuck 120, and the other end is connected to the tube 31A between the first position L1 and the second position L2. A first valve 4 丨丨 arrangement 17 for opening and closing the first line 41 2010 is in the first line 4 〇. The first valve 4n is opened or closed to control the pressure within the vacuum holes 122. When the second and third valves 42! and 43 are closed and the first valve 4 is open, the interior of the vacuum holes 122 is maintained at a third pressure p3. The third pressure P3 is less than the second pressure p2 and greater than or equal to the first pressure «One of the first pipelines 32 is at the vacuum holes! 22 is connected to the first line 41 〇 between the first valve 4 and 1 , and the other end is connected to the tube between the outer double 110 and the 5 second second position L2. A second valve 421 for opening and closing the second line is disposed in the second line 420. The second valve 42"skin opens or closes' to control the pressure in the first line 41G and the vacuum holes 122. When the first and third valves 411A431 are closed, and the first valve 421 is opened, the outer casing (the inner space of (1) is connected to the first line 4Η) to gradually reduce the third force ρ3 and the The difference between the second pressures Ρ2. One of the third pipelines 430 is connected to the Guss _____, and the 'side vacuum port 122 is connected to the first valve 411. $筮& μ according to the main and the official line 410, the other end Connected to a gas supply source component 435.兮 knot-&&, 1 什 haidi two line 430 from the gas supply source part 4 3 5 ## one a* receiving the rolling body to supply the received gas to the first line 410 . S琛410 is used to open and close the third valve 43 of the third pipeline 430] you? ? The interval 431 is disposed in the third line 430. The gas supply source member 435 occupies the left > a ^ ^ upper 卞) 1 gas-storage gas to supply the stored gas to the second tube ^ 4 η 4 , e 踝 430. The supply gas may comprise 18 201036099 monovalent wind body. A flow control valve 434, a filter 433, and a force regulator 432 may be disposed between the gas supply source member 435 and the second valve 43A. The flow control valve 434 controls the flow of gas supplied from the gas supply source unit 435. The filter 433 filters the supplied gas, and the pressure regulator 432 controls the supplied gas, pressure. When the first and second chambers 4 u and 42! are closed, and the second valve 43 1 is opened, the gas is supplied to the first tube line 410 to increase the third pressure P3. Therefore, the difference between the third pressure p3 and the second pressure P2 gradually decreases. The second drawing is a schematic view of a substrate processing apparatus according to another embodiment of the present invention. :, iy Referring to the third figure, an inner space lu of a casing 11 is divided into a first space FS and a second space SS. The first and second spaces FS and SS are respectively provided in a space in which an ashing process is performed. A substrate W passes through the opening and exit of the substrate. and. ^ ° is defined in the sidewalls of the first and second spaces FS & SS, respectively. Each of the openings 112a and 112b is opened or closed by an opening/closing member such as a slit door. A first vacuum chuck 120a is disposed in the first space, and a first vacuum chuck 120b is disposed in the second space ss. The first and first vacuum chucks 120a and 120b vacuum-adsorb the substrate w, respectively. The first and second vacuum chucks 120a have the same structure as the vacuum chuck 120 of the first figure. A closed crucible 140 and first and second showerheads 15〇& and 15〇b 19 201036099 are arranged in the first and second vacuum chucks 20a and! Above 2〇b. The closure cap 140 corresponds to the first and second spaces FS and SS- and is disposed above the casing 11 。. Further, the closure cover 14 is coupled to the outer casing 110 to cover the first and second spaces FS and SS. The closure cover 140 includes a first cover member 141 disposed on an upper portion of the first space FS, and a second cover member 142 disposed on an upper portion of the second space ss. The first and second cover members 141 and 142 have the same structure as the closure cover 140 of the first figure. A first shower head 150a is disposed between the first cover member 141 and the only real suction cup 120a and a second shower head i5〇b is disposed between the second cover member 142 and the second vacuum chuck 12b. A plurality of holes for spraying the plasma onto the substrate w (the substrate w is fixed to the first and second vacuum chucks 120a and 120b) are respectively defined by the first and second shower heads 15 & 〇b. - a first plasma generating unit 210 is disposed on an upper portion of the first cover member mi, and a second plasma generating unit is disposed on an upper portion of the second cover member 142. The first and fourth "electric water generating units 210 and 220 generate plasma to supply the generated electric water to one of the sensing spaces GS1 of the first cover member 141, or one of the sensing spaces GS2 of the first first member 142 The first and first electric name generating units 21A and 22B have the same structure as the electric generating unit 200 of the first figure. An exhausting member 300 is disposed under a processing unit 1 20 20 201036099 The gas component 300 controls a pressure in the inner space 1 of the outer casing 110 and discharges an internal gas. The exhaust component 300 includes a tube 310 and a vacuum pump 320 for the outer casing. The inner space (1) of m is discharged to the outside, and the vacuum pump 320 is used to control the pressure in the medium 111 of the outer casing. Since the tube 310, the vacuum pump 32, and the tube valve 33 The crucible has the same structure as that shown in the first embodiment, and a detailed description will be omitted herein. The eight β-vacuum line 400 is connected to the vacuum hole 122 to control one of the pressures in the vacuum holes 122. Specifically, the The vacuum line 4〇〇 includes: a first line 41〇' which will be one A vacuum hole 122a of the first vacuum chuck 120a is connected to the tube 31, a branch line 413, which is branched from the first line 41 and connected to a vacuum hole 122b of a second vacuum chuck 12b. a line 410 is connected to the tube; a second line 42〇, which is 31〇; a third line 430, which supplies the gas to the first line 4丨〇; and valves, which are respectively disposed in the lines 410, 420, and 430. Specifically, one end of the first pipeline is connected to the first true other end and is connected between the vacuum hole 22a L1 and the second position L2 of the first position empty suction cup 120a. Tube 3 〇. One for opening and closing the first tube, the first % 411 & line 410 of the auxiliary line 412 is disposed in the first line 41. The auxiliary valve 412 is disposed at a branch position DP ( The sub-line 4; [3 here is divided from the first 21 201036099 B line 41 ο ) and the first true 4U ^ t ^ 1223 3 10 door is straight, the sea knife position DP and the tube - '. The first - and the auxiliary valve: closed 'to control the pressure of the first vacuum chuck is hit = one inside. Go to the ancient also has a hole 122a The correct suction cup 12Ga is not used for a substrate. The auxiliary 阙412 prevents the gas from being supplied to the first vacuum hole l22a of the first valve l2〇a. When the second and third and 43] are closed, and the first valve 4 ι When the auxiliary 阙w is opened, the inside of the vacuum hole ma of the first vacuum chuck 12〇a is maintained at the third pressure P3. The third pressure p3 is smaller than the second pressure P2 and greater than or equal to a first pressure ρι. The sub-line 413 is divided from the first line 410 and connected to the 真空 second vacuum chuck 12 〇b, and has a working hole I22b. A branch valve 414 for opening and closing the sub-line 413 is disposed in the sub-line 413. When the second vacuum chuck 120b is not used in the substrate processing process, the branch valve 414 prevents gas from being supplied to the vacuum hole 122b of the second vacuum chuck 120b. When the first and second vacuum: discs 120a and 120b are not used in the substrate processing process, the auxiliary valve 412 or the branch valve 414 is closed to selectively close any of the vacuum holes 122a and 122b. By doing this, an effective substrate processing process is performed. The first valve 411 and the branch valve 414 are opened or closed to control a pressure in the vacuum hole 122b of the second vacuum chuck 1 2b. When the second and third valves 421 and 431 are closed and the valve 411 and the branch 阙 414 are opened, the 22nd 201036099 vacuum cup 120b is directly 空 p 卞 卞 n + t hole 122b The interior is maintained at the second...3.嶋 is less than the second pressure at the first pressure P1.第二 Ο The second pipeline is connected to the branch line 4i() between the valve and the branch, and the other housing no is connected to the second position u to the material 31. The second portion 421 of the second line 42 is opened and closed in the j-g line 420. The second valve 421 is opened or closed to control one of the forces in the vacuum holes 122a & 122b. When the first and second valves 411 and 431 are closed and the second valve 421, the auxiliary valve 412, and the branch 414 are opened, the outer space ill of the outer casing is connected to the first line 41G. To gradually reduce the difference between the third pressure P3 and the second pressure p2. One end of the far second official line 430 is connected to the first line 41A between the branch position Dp and the first valve jui, and the other end is connected to the gas supply source part 435. The third line 43 receives gas from the gas source 1 common source member 435 to supply the gas to the first line 410. A valve 431 for opening and closing the third line 430 is disposed in the third line 43A. The gas supply source unit 435 stores the gas to supply the stored gas to the S-th line 430. - A flow control valve 434, a filter 433 and a pressure regulator 432 may be disposed between the gas supply source member 435 and the Le Valve 431. The flow control valve 434 controls the flow of gas supplied from the gas supply unit 435. The filter 433 23 201036099 filters, supplies the gas, and the pressure regulator 432 controls the force of the supplied gas. When the first and second valves 411 and 42 are closed, and the third valve 431, the auxiliary valve 412, and the branch valve 414 are opened, the gas is supplied to the first line 41 to increase the third pressure. P3. Therefore, the difference between the third pressure p3 and the second pressure p2 gradually decreases. A substrate processing method using a substrate processing apparatus including the above components will be described below. The method of processing the substrate includes maintaining a pressure in one of the inner spaces of one of the outer casings 1 at a second pressure p2, vacuum-absorbing a substrate w on a vacuum chuck 120, processing the substrate w, and unloading the τ ο The substrate w of the treatment. A process for processing the substrate will be described in detail below. 4A to 4C are diagrams showing the flow of a substrate processing method according to the present invention. Referring to Fig. 4A, a substrate w is introduced into an inner space m of an outer casing 110 by a transfer unit (not shown) to move the substrate w over a vacuum chuck 120. Then, the substrate w is fixed to the top surface of the vacuum chuck 12G by the raising/lowering of a lift pin (not shown). Operation - The vacuum pump 32 maintains a first pressure P1 between a first position L1 and a second position L2 of a tube. At this time, the tube valve 330 is in a partially open state. Therefore, since the tube valve 330 is partially knocked within (4) (1), the pressure is maintained at a second pressure: 24 201036099 P2, the e-heavy force is greater than a first dust force μ. When a first valve 411 is opened to connect -f 31G between the first position L] and the second position to between - the first line 410 and the second position L1 The first relay force P1 is transmitted to the first line 410' to maintain the vacuum chuck 120-vacuum L 122 "internally maintained at - the third pressure P \ ° the third house force P3 is greater than or equal to the first - Pressure P1 and small

At the second pressure P2. Therefore, since the second pressure P2 applied to one of the top surfaces of the substrate W is larger than the second pressure P3' applied to one of the bottom surfaces of the substrate w, the substrate w is continuously adsorbed on the vacuum chuck 120. Referring to Fig. 4B, when the substrate w is continuously adsorbed on the vacuum chuck 12G, the "plasma generating member" generates plasma to supply the generated plasma to - (4) i - the sensing space GS. The supply plasma is squirted to the substrate through a hole defined in a shower head to process the substrate w. The gas and reaction by-products generated during the treatment are forcibly taken up to discharge the sucked gas and reaction by-products to the outside through the tube. During this process, the tube valve 33 is maintained in a partially open state. Therefore, the gases and reaction by-products are discharged to the outside through the partially opened pipe valve 303. Referring to Fig. 4C, when the processing of the substrate w is completed, the substrate w is unloaded from the vacuum chuck 120. The substrate w is unloaded by maintaining the difference between the first pressure P3 and the second pressure p2 within a previously set range of 25 201036099. The previously set range indicates a difference between the third pressure P3 and the second pressure p2, which prevents the substrate w from being damaged when the lift pin is raised to lift the substrate W fixed to the vacuum chuck 120. Further, the first set range includes a state in which the third pressure p3 and the first pressure P2 are balanced. Meanwhile, the previous setting range includes a shape in which the second pressure P3 is smaller than the second pressure P2 within a range in which the substrate w is not damaged by the lift pin. At the same time, the previous setting range includes a situation in which the second pressure P3 is greater than the second pressure p2 in a range, and within this range, a burst occurs in which the substrate w bounces from the vacuum chuck 12 (popping) phenomenon. According to a specific embodiment, the second valve 421 is opened to connect the inner space U1 of the outer casing 11 to the first line 41, whereby the difference between the third pressure P3 and the second pressure p2 is obtained. The value is maintained within the previously set range. When the second pressure P2 greater than the third pressure p3 is transmitted to the first line 410 through the second line 420, the difference between the third pressure p3 and the second pressure p2 is lowered, and thus maintained Within the previous setting range. According to another embodiment, the third valve 431 is opened to supply a gas to the first line 410, whereby the difference between the third pressure 1 P3 and the second pressure p2 is maintained at the previous Within the set range. The supply gas may comprise an inert gas. When the gas permeable 26 201036099 stored in the gas supply source part 435 is supplied to the first line 410 through the third line 430, the second pressure P3 is increased to the third pressure p3 and the second pressure. The difference between P2 is maintained within the previously set range. Since the flow rate of the supplied gas can be controlled by the pressure regulator 432, the difference between the third pressure P3 and the second pressure p2 can be effectively maintained within the previously set range for a relatively short period of time.

According to still another embodiment, the second valve 421 and the third valve 43 1 are simultaneously opened to maintain the difference between the third pressure p3 and the second pressure P2 within the previously set range. The second valve / 21 is opened to connect the inner space I of the outer casing 11 to the first line 410, thereby reducing the difference between the third pressure p3 and the first pressure P2. In the same day temple, the third 阙43ι is opened to increase the third pressure P3 by the gas supplied to the first line 41G, thereby lowering the third pressure P3 and the second pressure. When the difference between the third pressure P3 and the second pressure p2 is held in the previously set range (4), the lift pin is raised to raise the soil plate to the south of the vacuum and the disk 12〇. The substrate W supported by the lift pin is transferred to another processing unit (not shown) by the transfer device; #播,,, x. - One substrate treatment of a specific embodiment The following will be explained according to another apparatus. 5A is a cross-sectional view of a second suction cup according to another embodiment of the present invention, which is in accordance with the present invention. 27 201036099 Another embodiment of a vacuum chuck plane schematic diagram. Referring to the fifth and fifth figures, the vacuum chuck U0 is placed in an inner space U1 + of the outer 110 to vacuum-adsorb the substrate W. The vacuum chuck 12G has a 1 (four) shape. The vacuum hole 122 that vacuum-adsorbs the substrate W is defined on the top surface of the vacuum chuck 120. The vacuum holes 122 include a first true hole 1 22a defined in a first region of the top surface of the vacuum chuck 120, and a second one of the top surfaces defined in the top surface of the vacuum chuck 12 Vacuum hole 122b. According to this embodiment, the first region corresponds to a central region of the top surface of the vacuum chuck 122, and the second region corresponds to an edge region of the surface of the vacuum chuck 122. The first vacuum holes 122a are connected to each other through a hole defined in the inside of the vacuum chuck 122. The second vacuum holes 122b are connected to each other through a hole defined in the interior of the vacuum chuck 22. The first vacuum holes 122a are not in communication with the second vacuum holes 122b. The first vacuum holes 122a are connected to a first line 410 to vacuum-absorb the substrate W in a region corresponding to the first region. The second vacuum holes 122b are connected to a fourth tube line 440 (which will be described later) to vacuum-adsorb the substrate W in a region corresponding to the second region. According to this embodiment, the first vacuum holes 122a vacuum-adsorb the substrate W' in the central portion of the substrate W and the second vacuum holes 122b vacuum-adsorb the substrate W at the edge regions of the substrate W. The sixth drawing illustrates a schematic view of a portion of the substrate processing apparatus shown in the fifth A and fifth B laps 28 201036099. Referring to the fifth A diagram, the fifth B diagram, and the sixth diagram, an exhaust member 300 is disposed under a processing member 1A. The exhaust member_ controls a pressure in the internal space η of the outer casing 110 and discharges an internal gas. The exhaust member 3A includes a tube 3ι that is used to discharge a gas in the inner space U1 of the outer casing 110 to the outer portion 4, which is used to control the outer bite.

The pressure in the internal space 111 of the H; and the tube I open and close the tube 310 or to control the flow of gas into the tube 31. Since the tube 31, the vacuum (4) 32 (), and the tube valve 330 have the same structure as in the first embodiment, a detailed description thereof will be omitted. A vacuum line 400 is coupled to the vacuum holes 122 to control a pressure within the vacuum holes 122. In particular, the vacuum line 400 includes: a first line 41〇 connecting the first vacuum holes 122a to the tube 31〇; a second line 42〇 connecting the first line 410 to the a third line 43〇, which supplies the gas to the first line 41〇; a fourth line 440 that connects the second vacuum holes 12 to the first line 410' first To the second valves 411, 421, 431, which are respectively disposed in the first to second pipelines 410, 420 and 430 to open and close the first to third pipelines 410, 420 and 430; - the first pressure control a 417 disposed in the first line 41〇 to control a pressure in the first line 410; and a second pressure controller 29 201036099 448 disposed in the fourth line 44〇 to control the In the fourth line 440, < pressure. Since the first to third lines and the first to first valves have the same structure as in the first figure, a detailed description thereof will be omitted. The first pressure controller 417 is disposed in the first line 41A between the first vacuum holes 122a and the first valve 411 to control the pressure in the first tube and the line 410. The vacuum pressure in the first vacuum holes 122a is controlled by the first pressure controller 4丨7. The pressure in the first vacuum holes 122a can be controlled by following the following four steps. First, the first valve 411 is opened to maintain the interior of the first vacuum holes 122a at the third pressure P3. The inner space m of the outer casing n is communicated with the first line 41G by opening the second valve 421 to gradually reduce the difference between the third pressure P3 and the second pressure p2. The third valve 43i is opened to supply gas to the first line 410, thereby gradually decreasing the difference between the third pressure P3 and the second pressure p2. Finally, the pressure within the first vacuum port 122a is controlled by the first pressure controller 417. One end of the fourth line 440 is connected to the holes of the second vacuum holes !2, and the other end is connected to the first line 411 between the first vacuum holes U2a and the first valve 411. A second pressure controller 448 for controlling the fourth line 440 is disposed in the fourth line 44A. The pressure in the second vacuum hole 122b can be independently controlled by the second force controller 448 from the first vacuum port. Because 30 201036099, since the vacuum adsorption force between the substrate w and the vacuum chuck 丨2〇 can be different according to the regions of the substrate w, the substrate W and the vacuum chuck 12〇 can be increased. Adsorption force. The pressure in the second vacuum holes 122b can be controlled by four steps 'similar to the first vacuum holes 22a. Figure 7 is a schematic diagram showing a portion of a substrate processing apparatus in accordance with another embodiment of the present invention. 〇 Connect to the first vacuum hole 122b and the other end to the pressure control pump 442 with reference to the fifth line A, the fifth B, and the seventh figure, the fourth line 440. A valve 443 for opening or closing the fourth line 440 is disposed in the fourth line 44A. One. The pressure control pump 442 controls the pressure in the second vacuum port 122b. The pressure in the second vacuum holes 122b can be independently controlled from the first vacuum holes 122a by the pressure control pump 442. Therefore, since the vacuum suction force between a substrate W and a vacuum chuck 12 is different depending on the area of the substrate W, the adsorption force between the substrate w and the vacuum chuck 120 can be increased. Figure 8 is a schematic diagram showing a portion of a substrate processing apparatus in accordance with another embodiment of the present invention. Referring to Figures 5A, 5B, and 8 , a vacuum line 400 is coupled to the vacuum port 22 to control the pressure within the vacuum port 122. The vacuum line 400 includes: a first line 4丨〇 connecting the first vacuum hole 122a to a tube 31〇; a second line 420 connecting the first line 410 to the tube 31〇; a three line 31 201036099 430 that supplies a gas to the first line 41 〇; a fourth line 440 that connects the second vacuum port 22b to the tube; and a fifth line 450 that the fourth line 44〇 is connected to the tube 31〇; and a sixth tube, line 460, and the gas is supplied to the fourth line 440. One end of the first line 4]0 is connected to the first vacuum hole H2a of a vacuum chuck 2〇, and the other end is connected to the tube 31〇 between a first position l] and a second position L2. A first valve 411 for opening and closing the first line 410 is disposed in the first line 410. The first valve 411 is opened or closed to a pressure within the first vacuum holes 122a. One of the second lines 420 ends at the first vacuum holes η. The first valve 411 is connected to the first line 41, and the other end is connected between the - outer casing m and the second position L2; A second two for opening and closing the second line 42 is similarly disposed in the second line 42G. The second valve 421 is gated or closed to control the pressure within the first line 410 and the first vacuum j 122a. The first valve 411 is connected to the first line 41〇, and the other end is connected to a first gas supply source unit 4. The third dry difference 430 is from the The first gas supply source unit 435 receives a gas to supply the received gas to the first line 41. A third valve 431 for opening and closing the third line 430 is disposed in the % 32 201036099 two line 430. The helium gas is supplied to the third line 430 by storing the -^irALm^ of the stored =: gas supply source part 435. The far-feeding body can be used to make a gas. Controlling the supply of gas from the supply of gas to the filter 433 for supplying the supplied gas, the first pressure regulator for controlling the pressure of the supplied gas

' is disposed between the first gas supply source member 435 and the third 430. One end of the N ... a fourth s line 440 is connected to a vacuum chuck 12 〇 : the other end of the first working hole 122b ' is connected to the tube 3 } 于 between the first position L1 and the first position L2. a fourth valve 44, on the cloth: in the fourth official line 44〇+, which is used to open and close the fourth line 44G °, the fourth (five) 441 is opened or closed to control the brothers a vacuum hole 122b One of the pressures inside. One end of a fifth official line 450 is connected between the second vacuum hole 122b and the fourth valve 441 to the fourth line 44A, and is connected between the outer casing 110 and the second position L2. To the tube 310. A fifth valve 451 is disposed in the fifth line 45A for opening and closing the fifth line 450. The fifth valve 451 is opened or closed to control the pressure in the fifth line 450 and the second vacuum holes 122b. One of the sixth lines 460 is connected to the fourth line 440 between the second vacuum port 22b and the fourth valve 441, and the other end is connected to a second gas supply source member 465. The sixth line 33 201036099 460 receives a gas from the 5th second gas supply source component 465 to supply the received rolled body to the fourth line, thereby controlling the pressure within the second vacuum orifice (10). A sixth valve 461 is disposed in the sixth line 460 for opening and closing the sixth g-line 460. The second gas supply source part 465 stores the gas, and supplies the stored gas to the sixth line 46〇. The supply gas may comprise an inert gas. a flow control valve 464 for controlling the flow of gas supplied from the second gas supply source unit 465, a filter 463 for filtering the supplied gas, and a second pressure regulator 462 for controlling the pressure of the supplied gas. It may be disposed between the second gas supply source member 465 and the sixth valve 460. According to the present invention, the substrate can be fixed to the vacuum chuck by utilizing the difference between the pressure in the inner space of the outer casing and the pressure in the vacuum holes of the vacuum chuck. At the same time, it is easy to control the pressure in the internal space of the outer casing and the difference between the pressures in the vacuum holes of the vacuum chuck. At the same time, the adsorption force between the substrate and the vacuum chuck can be increased. At the same time, the adsorption force between the substrate and the vacuum chuck can be controlled according to the regions of the substrate. At the same time, the yield and surface roughness of the substrate can be improved. As described above, according to the specific embodiments, the process is capable of handling the above-mentioned target processing efficiency over the entire area of the 34 201036099 wafer w. And the accompanying application is hereby incorporated by: Therefore, the law has a large increase and its scope of the invention should be within the following claims.

Note 2:: Limit its 4 effect butterfly' and should not be subject to the above detailed description [Simple description of the drawings] The drawings contained in this article provide a further understanding of the present invention, and incorporate 5 brothers and constitute a graphic Description; the part of the book. The exemplary embodiments of the present invention are used to explain the principles of the present invention. In the figure: the first figure is a 摅 ΒΒ ΒΒ ΒΒ gt 像 像 像 & & & & 具体 具体 具体 具体 具体 具体 具体 具体 具体 具体 具体 基板 基板 基板 基板 ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view of a substrate processing apparatus according to another embodiment of the present invention; FIG. 4 to FIG. 4C are diagrams illustrating a substrate processing method according to the present invention; A cross-sectional view of a vacuum chuck according to another embodiment of the present invention; /, 35 201036099 A fifth diagram is a schematic plan view of a vacuum chuck according to another embodiment of the present invention; Another embodiment of the invention is a schematic diagram of a portion of a substrate processing apparatus; a seventh diagram is a schematic diagram of a portion of a substrate processing apparatus according to another embodiment of the present invention; and an eighth figure is another according to the present invention. A schematic diagram of a portion of a substrate processing apparatus of a specific embodiment. [Main component symbol description] 100 processing component 110 housing 111 internal space 112 opening 120 vacuum chuck 122 vacuum hole 123 support shaft 140 closing cover 141 first cover member 142 second cover member 150 shower head 200 plasma generating member 210 first plasma Generation unit 211 magnetron 36 201036099

212 waveguide 213 plasma source component 214 gas supply source pipe 220 second plasma generating unit 300 exhaust component 310 tube 320 vacuum pump 330 pipe valve 400 vacuum line 410 first line 411 first valve 412 auxiliary valve 413 sub-line 414 Branch valve 417 first pressure controller 420 second line 421 second valve 430 third line 431 third valve 432 first pressure regulator 433 filter 434 flow control valve 435 first gas supply source part 440 fourth line 37 201036099 441 fourth valve 442 pressure control pump 443 valve 448 second pressure controller 450 fifth line 451 fifth valve 460 sixth line 461 sixth valve 462 second pressure regulator 463 filter 464 flow control valve 465 second gas Supply source part 112a opening 112b opening 120a first vacuum chuck 120b second vacuum chuck 122a first vacuum hole 122b second vacuum hole 150a first shower head 150b second shower head GS sensing space GS1 sensing space GS2 sensing space FS first space 38 201036099

Ss second space DP branch position W substrate PI first pressure P2 second pressure P3 third pressure LI first position L2 second position

39

Claims (1)

201036099 VII. Patent application scope: 1. A substrate processing apparatus, comprising: a casing comprising an inner space; a vacuum chuck, wherein a vacuum hole is defined in a top surface thereof, and the vacuum chuck is disposed in the inner space Neutrally, a substrate is vacuum-adsorbed; a gas in the inner space passes through the outside of the tube, and the tube is connected to the shell; a vacuum pump is disposed at a first position of the tube to control the inner portion a pressure in the space; a valve disposed between the first position and the outer casing at a second position of the tube to open and close the tube or to control the flow of a gas into the tube; and a vacuum official line, comprising: a first line connected to the vacuum hole at one turn, and the other end connected to the tube between the first position and the second position; and a first valve opened and Close the first line. ❹ 2. The substrate processing crack according to claim 1, wherein the vacuum line further comprises: a second pipeline, one end of which is connected to the first between the vacuum hole and the first valve a line, the other end being connected to the tube between the outer casing and the second position; and a second valve disposed in the second line to open and close the second line. The substrate processing apparatus of claim 1, wherein the vacuum pipeline further comprises: a third pipeline, one end of which is connected to the first pipeline between the vacuum hole and the first valve The other end is connected to a gas supply source unit for supplying a gas to supply a gas to the first line, and a third valve disposed in the third line to open and close the third line. A substrate processing apparatus comprising: an outer casing including an inner space; first and second vacuum chucks, wherein vacuum holes for vacuum-absorbing a substrate are respectively defined in a top surface thereof, the first and second The vacuum chucks are spaced apart from each other in the inner space; a tube through which the gas in the inner space is discharged to the outside, the tube is connected to the outer casing; G-vacuum pump, which is disposed in one of the tubes a position to control a pressure in the interior space; a tube valve disposed in the second position of the tube between the first position and the outer casing to open and close the tube or to control a gas inflow a flow of the tube; a first line, one end of which is connected to the vacuum holes of the first vacuum chuck, and the other end is connected to the tube between the first position and the second position; a sub-line of a pipeline connected to 41 201036099 of the vacuum holes of the second vacuum chuck; a first valve disposed in the first line between a branch position and the tube, the first The valve opens and closes the first line, wherein the branch line is divided from the first line at the branching position; an auxiliary valve is disposed between the branch position and the vacuum holes of the first vacuum chuck In the first line, the auxiliary valve opens and closes the first line; and a branch valve 'which is disposed in the branch line, the branch opens and closes the branch line. The substrate processing apparatus of claim 4, further comprising: connecting to the first performance, the foot & the other end is connected between the outer casing and the second position And a second valve, which is arranged in # _ to open and close the second pipeline - the line of the 'lubrication', the second valve, which further covers the substrate processing apparatus described in item 5 of the monthly patent - the third line is connected between the ends of the first valve and the gas of the first valve of the first step, and the other end is connected to a supply gas supply source component to Gas is supplied to the first pipeline - the third valve, which is arranged at the clinic # to open and close the third pipeline. '=In the official line, the third valve 42 201036099 7. A substrate processing method using a substrate processing device And the processing device comprises: a casing comprising: an inner two, a vacuum chuck, wherein the vacuum hole is defined in a top surface thereof, and the vacuum chuck is disposed in the inner space to vacuum adsorb the base H' (4) The gas in the space is discharged to the outside r through the pipe, a tube connected to the outer casing; a vacuum pump disposed at a first position of D Hailu to control one of the internal spaces Ο ❹ ❹ ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' In the -first position of the tube to open and close the tube according to the pressure of the internal space, or to control the flow of gas to the tube; and the empty line, comprising: - the first line, the end of the line To the work hole, the other end is connected to the tube between the first position and the second position f; and - the first valve opens and closes the first line, the substrate processing method comprises: when the substrate is passed on In the internal space, maintaining a first force between the first position and the door: and partially opening the valve to press the second pressure in the inner space; and greater than Violation of the first - second wish: to maintain the pressure in the vacuum hole in the air to absorb the force of the true-empty suction cup, thereby using the substrate to be true, go, and 8: Please patent item 7 When the substrate processing side is described, a processing gas is supplied to the inside The substrate processing method of claim 8, wherein the vacuum pipeline further comprises: a second pipeline having one end at the vacuum hole and the first valve Connected to the first line, the other is connected to the tube between the second housing and the second position; and a second valve disposed in the second line to open and close the first a second line; wherein after the substrate processing is completed, the method further comprises opening the second valve to maintain the difference between the third pressure and the second pressure within a previously set range, thereby The substrate processing method according to claim 9, wherein the vacuum pipeline further comprises: a third pipeline connected to the vacuum port and the first valve a first line connected to a gas supply source for supplying a gas to supply a gas to the first line; and a third valve disposed in the third line to open and close the Third tube a line; wherein the unloading of the substrate further comprises opening the third valve to supply a gas to the first line, thereby maintaining a difference between the third pressure and the first pressure at the previous setting Within the scope. 11. The substrate processing method of claim 9, wherein the unloading of the substrate comprises closing the tube. 12. The substrate processing method as described in claim 7 of the patent scope is disclosed in the method of the invention, wherein the third pressure is greater than or equal to the first pressure. a substrate processing apparatus comprising: an outer portion, further comprising an inner space; a vacuum chuck, wherein the first vacuum hole is defined in the top surface thereof: in the first region and the second vacuum hole is defined in the top In the first area of the surface, the second area is different from the first area, The vacuum chuck is disposed in the inner space to vacuum adsorb the two substrates; a tube through which the gas in the inner space is discharged to the outside' the tube is connected to the outer casing; - a vacuum pump disposed on the tube a first position to control a pressure in the inner space; a tube valve disposed between the first position and the outer casing at a second position of the tube to receive the tube or to control a gas a flow into the tube; and a vacuum line comprising: a first line connected to one end thereof. a first vacuum hole such as a hai, the other end is connected to the tube between the first position and the second position; and a first valve that opens and closes the first line. 14. The substrate processing apparatus of claim 13, wherein the first area comprises a central area and the second area comprises an edge area. b. The substrate processing apparatus of claim 13, wherein the vacuum line further comprises: 45 201036099 two pipelines whose one end is connected to the first vacuum hole and the first: a pipeline connected to the tube between the outer casing and the first position; a second pipe having one end connected to the first vacuum hole and the second connection to the m other end Supplying the first line; feeding - supply to η:: two valves 'which are disposed in the second line to open and close the second line of the second; and three valves disposed in the third line, To open and close the third pipeline. 16. The substrate processing apparatus of claim 13, wherein the vacuum line further comprises a fourth pipeline, one end of which is connected to the second straight portion, and the test is connected to the second hole. a pressure control pump that controls the pressure in the second vacuum holes. 17. The substrate processing device according to claim 13 wherein the vacuum line further comprises a mountain. a pipeline connected to the second vacuum holes, and another to the first vacuum hole and the first pipeline, and the rugged Wangtong, a first pressure controller disposed in the fourth pipeline The substrate processing apparatus of claim 13, wherein the vacuum pipeline further comprises: 46 201036099 a fourth pipeline, one end of which is connected to the second a vacuum hole, the other end being connected to the tube between the first position and the second position; and a fourth valve opening and closing the fourth line. 19. According to claim 18, Substrate processing device 'where' The vacuum line further includes: ❸ 第五 a fifth & line, one end of which is connected between the second vacuum hole and the first valve to the fourth line 'the other end is connected between the outer casing and the younger one to The tube; the /, g line, one end of the second vacuum hole and the third connection to the fourth line 'the other end is connected to a supply: also the first rolling body supply source part to a gas is supplied to the fourth line of the shai; a fifth valve # is disposed in the fifth line to open and close the fifth line; and a 闿p"々 valve # is disposed in the sixth line, To open and close the sixth pipeline. 47