TWI796335B - Chuck plate, chuck structure having the chuck plate, and bonding apparatus having the chuck structure - Google Patents

Chuck plate, chuck structure having the chuck plate, and bonding apparatus having the chuck structure Download PDF

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TWI796335B
TWI796335B TW107118330A TW107118330A TWI796335B TW I796335 B TWI796335 B TW I796335B TW 107118330 A TW107118330 A TW 107118330A TW 107118330 A TW107118330 A TW 107118330A TW I796335 B TWI796335 B TW I796335B
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vacuum
plate
chuck
wafer
heating
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TW201919146A (en
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南成龍
鄭仁榮
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南韓商美科陶瓷科技有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Adornments (AREA)
  • Mechanical Pencils And Projecting And Retracting Systems Therefor, And Multi-System Writing Instruments (AREA)

Abstract

卡盤結構物的卡盤板放置於加熱盤上，在上面支撐晶片，將該加熱盤中發生的熱傳遞給該晶片，以便加熱該晶片，為了利用真空力吸附該晶片，可以具有貫通上下的真空孔及真空槽，該真空槽為了真空吸附於該加熱盤而配備於下部面，被該加熱盤的上部面限定而形成空間。The chuck plate of the chuck structure is placed on the heating plate, supports the wafer on it, and transfers the heat generated in the heating plate to the wafer to heat the wafer. In order to absorb the wafer by vacuum force, it may have The vacuum hole and the vacuum groove are provided on the lower surface for vacuum adsorption to the heating plate, and are defined by the upper surface of the heating plate to form a space.

Description

卡盤板、具有該卡盤板的卡盤結構物及具有卡盤結構物的焊接裝置Chuck plate, chuck structure with the same, and welding device with the chuck structure

本發明涉及卡盤板、具有該卡盤板的卡盤結構物及具有卡盤結構物的焊接裝置，更詳細而言，涉及一種用於固定晶片的卡盤板、具有該卡盤板的卡盤結構物及具有卡盤結構物的焊接裝置。The present invention relates to a chuck plate, a chuck structure with the chuck plate, and a welding device with the chuck structure. More specifically, it relates to a chuck plate for fixing a wafer, and a chuck with the chuck plate. A disk structure and a welding device with a chuck structure.

最近，為了應對半導體封裝等電子部件的小型化要求，開發了層疊多個電子部件而形成層疊晶元封裝的技術。Recently, in order to meet the demand for miniaturization of electronic components such as semiconductor packages, a technology of stacking a plurality of electronic components to form a stacked die package has been developed.

該層疊晶元封裝作為在封裝基板上層疊有晶元的半導體封裝，可以實現高集成化。該層疊晶元封裝在晶元級（chip level）或晶片級（wafer level）上進行製造。This stacked die package can realize high integration as a semiconductor package in which dies are stacked on a package substrate. The stacked die package is manufactured at a chip level or a wafer level.

為了在該晶元級或晶片級上製造層疊晶元封裝，執行對晶元與晶元或晶片與晶片或晶元與晶片施加熱和壓力並焊接所需的作業，將執行這種作業的裝置稱為焊接裝置。該焊接裝置在利用卡盤結構支撐該晶元的狀態下，利用焊接頭在該晶片上層疊該晶元，利用焊接頭對該晶片和晶元進行熱壓焊接。The apparatus that will perform the operations required to apply heat and pressure and solder die-to-die or die-to-die or die-to-die in order to manufacture stacked die packages at the die or wafer level called a welding device. The welding device stacks the wafer on the wafer with a bonding head while the wafer is supported by the chuck structure, and performs thermocompression bonding of the wafer and the wafer with the bonding head.

該卡盤結構物由內置發熱體的加熱盤及將該加熱盤中發生的熱傳遞給該晶片的卡盤板構成。The chuck structure is composed of a heating plate with a built-in heating element and a chuck plate that transfers heat generated in the heating plate to the wafer.

該卡盤板由導熱率高的氮化鋁材質構成，因而可以容易地急速加熱該晶片。但是，由於該卡盤板的導熱率高，因而在該焊接製程中始終預熱該晶片時，發生該晶片與該晶元之間的軟釺焊物質被壓碎的現象。因此，會在該晶片與該晶元之間發生焊接不良。The chuck plate is made of aluminum nitride material with high thermal conductivity, so the wafer can be heated rapidly and easily. However, due to the high thermal conductivity of the chuck plate, when the wafer is always preheated during the soldering process, the soldering material between the wafer and the die is crushed. Therefore, poor soldering occurs between the wafer and the die.

該卡盤結構物為了真空吸附該晶片而具有真空孔。該真空孔以該卡盤結構物的中心為基準呈輻射狀形成，因而位於最外側的真空孔之間的間隔相對較寬。因此，該卡盤結構物的邊緣部位的真空吸附力相對較低，該晶片會無法完全貼緊該卡盤結構物。The chuck structure has vacuum holes for vacuum suction of the wafer. The vacuum holes are radially formed based on the center of the chuck structure, so the space between the outermost vacuum holes is relatively wide. Therefore, the vacuum adsorption force of the edge of the chuck structure is relatively low, and the wafer cannot be completely adhered to the chuck structure.

解決的技術問題Technical issues resolved

本發明提供一種卡盤板，其導熱率相對較低，位於最外側的真空孔的間隔相對較窄地配備。The present invention provides a chuck plate having relatively low thermal conductivity and having relatively narrow intervals between vacuum holes located on the outermost side.

本發明提供一種具有該卡盤板的卡盤結構物。The invention provides a chuck structure with the chuck plate.

本發明提供一種具有該卡盤結構物的焊接裝置。The invention provides a welding device with the chuck structure.

技術方案Technical solutions

本發明的卡盤板放置於加熱盤上，在上面支撐晶片，將該加熱盤中發生的熱傳遞給該晶片，以便加熱該晶片，為了利用真空力吸附該晶片，可以具有貫通上下的真空孔及真空槽，該真空槽為了真空吸附於該加熱盤而配備於下部面，被該加熱盤的上部面限定而形成空間。The chuck plate of the present invention is placed on the heating plate, supports the wafer on it, and transfers the heat generated in the heating plate to the wafer to heat the wafer. In order to absorb the wafer by vacuum force, it may have a vacuum hole that penetrates up and down. and a vacuum groove, which is provided on the lower surface for vacuum adsorption to the heating plate, and is defined by the upper surface of the heating plate to form a space.

根據本發明的一個實施例，該卡盤板可以由在氧化鋁中添加了鈦的材質構成，以便該卡盤板具有低於氮化鋁導熱率的導熱率。According to an embodiment of the present invention, the chuck plate may be made of aluminum oxide with titanium added, so that the chuck plate has a thermal conductivity lower than that of aluminum nitride.

根據本發明的一個實施例，在該卡盤板中，相對於該氧化鋁100重量份，該鈦可以添加10至20重量份。According to an embodiment of the present invention, in the chuck plate, 10 to 20 parts by weight of the titanium may be added relative to 100 parts by weight of the alumina.

根據本發明的一個實施例，該卡盤板的導熱率可以為5至20 W/m•k。According to an embodiment of the present invention, the thermal conductivity of the chuck plate may be 5 to 20 W/m•k.

根據本發明的一個實施例，為了使該晶片在該卡盤板的邊緣也貼緊，位於該卡盤板的最外側的真空孔的間隔，可以配置得比位於與該最外側相比更內側的真空孔的間隔窄。According to an embodiment of the present invention, in order to make the wafer adhere to the edge of the chuck plate, the space between the outermost vacuum holes of the chuck plate can be arranged to be more inner than that of the outermost vacuum holes. The spacing of the vacuum holes is narrow.

本發明的卡盤結構物可以包括：加熱盤，其內置藉助於從外部接入的電源而發熱的發熱體，具有為了提供真空力而延長至上部面的第一真空管線及第二真空管線；及卡盤板，其放置於該加熱盤上，在上面支撐晶片，將該加熱盤中發生的熱傳遞給該晶片，以便加熱該晶片，為了利用該真空力吸附該晶片，具備與該第一真空管線連接的第三真空管線及真空槽，該真空槽為了真空吸附於該加熱盤而以與該第二真空管線連接的方式配備於下部面，被該加熱盤的上部面限定而形成空間。The chuck structure of the present invention may include: a heating plate, which has a built-in heating element that generates heat by means of a power source connected from the outside, and has a first vacuum line and a second vacuum line extended to the upper surface for providing vacuum force; and a chuck plate, which is placed on the heating plate, supports the wafer thereon, transfers the heat generated in the heating plate to the wafer, so as to heat the wafer, and is equipped with the first The third vacuum line connected to the vacuum line and the vacuum groove are provided on the lower surface to be connected to the second vacuum line for vacuum adsorption on the heating plate, and are defined by the upper surface of the heating plate to form a space.

根據本發明的一個實施例，該第三真空管線可以包括：真空槽，其以與該第一真空管線連接的方式配備於該卡盤板的下部面，被該卡盤板的下部面與該加熱盤的上部面限定而形成空間；及複數個真空孔，其貫通該卡盤板，從形成有該真空槽的下部面延長至該卡盤板的上部面。According to an embodiment of the present invention, the third vacuum line may include: a vacuum groove, which is provided on the lower face of the chuck plate in connection with the first vacuum line, and is connected to the lower face of the chuck plate by the lower face of the chuck plate. A space is defined by the upper surface of the heating plate; and a plurality of vacuum holes penetrate the chuck plate and extend from the lower surface where the vacuum groove is formed to the upper surface of the chuck plate.

根據本發明的一個實施例，該第一真空管線可以包括：真空槽，其以與該第三真空管線連接的方式配備於該加熱盤的上部面，被該卡盤板的下部面和該加熱盤的上部面限定而形成空間；及複數個真空孔，其貫通該加熱盤而從下部面延長至形成有該真空槽的上部面。According to an embodiment of the present invention, the first vacuum line may include: a vacuum groove provided on the upper face of the heating plate in connection with the third vacuum line, heated by the lower face of the chuck plate and the heating plate. A space is defined by the upper surface of the plate; and a plurality of vacuum holes penetrate the heating plate and extend from the lower surface to the upper surface where the vacuum groove is formed.

根據本發明的一個實施例，在該加熱盤的上部面和該卡盤板的下部面中某一面可以具備定位銷，在剩餘一面可以具備用於容納該定位銷並對該加熱盤和該卡盤板進行排列的容納槽。According to an embodiment of the present invention, one of the upper surface of the heating plate and the lower surface of the chuck plate may be provided with positioning pins, and the remaining surface may be provided with positioning pins for accommodating the positioning pins and connecting the heating plate and the chuck plate. A receiving slot in which the plates are arranged.

根據本發明的一個實施例，該卡盤結構物可以還包括：引導環，其掛接於沿著該加熱盤的上面邊緣形成的槽，引導該加熱盤的外周；及夾具，其以覆蓋該卡盤板的上部面邊緣的狀態固定於該引導環，使該卡盤板貼緊於該加熱盤進行固定。According to an embodiment of the present invention, the chuck structure may further include: a guide ring hooked on a groove formed along the upper edge of the heating plate to guide the outer periphery of the heating plate; and a clamp to cover the The state of the edge of the upper surface of the chuck plate is fixed to the guide ring, and the chuck plate is fixed in close contact with the heating plate.

根據本發明的一個實施例，該夾具可以放置於沿著該卡盤板的上面邊緣形成的槽，以便該夾具的上面與該卡盤板的上面位於相同的高度。According to one embodiment of the present invention, the jig may be placed in a groove formed along the upper edge of the chuck plate so that the upper face of the jig is at the same height as the upper face of the chuck plate.

根據本發明的一個實施例，為了防止藉由該加熱盤及該卡盤板側面的熱損失，該引導環及該夾具可以以導熱率比該卡盤板低的材質構成。According to an embodiment of the present invention, in order to prevent heat loss through the side of the heating plate and the chuck plate, the guide ring and the clamp can be made of a material with lower thermal conductivity than the chuck plate.

本發明的焊接裝置可以由卡盤結構物及焊接頭構成，該卡盤結構物包括：加熱盤，其內置藉助於從外部接入的電源而發熱的發熱體，具有為了提供真空力而延長至上部面的第一真空管線及第二真空管線；及卡盤板，其放置於該加熱盤上，在上面支撐晶片，將該加熱盤中發生的熱傳遞給該晶片，以便加熱該晶片，為了利用該真空力吸附該晶片，具備與該第一真空管線連接的第三真空管線及真空槽，該真空槽為了真空吸附於該加熱盤而以與該第二真空管線連接的方式配備於下部面，被該加熱盤的上部面限定而形成空間，該焊接頭配備於該卡盤結構物上，固定及加熱晶元，焊接於該晶片。The welding device of the present invention can be composed of a chuck structure and a welding head. The chuck structure includes: a heating plate, which has a built-in heating element that generates heat by means of a power supply connected from the outside, and has a function extending upward to provide vacuum force. a first vacuum line and a second vacuum line on the front; and a chuck plate placed on the heating plate, on which a wafer is supported, and heat generated in the heating plate is transferred to the wafer so as to heat the wafer, for The wafer is adsorbed by the vacuum force, and a third vacuum line connected to the first vacuum line and a vacuum chamber are provided, and the vacuum chamber is provided on the lower surface so as to be connected to the second vacuum line for vacuum adsorption on the heating plate. A space is defined by the upper surface of the heating plate to form a space, the welding head is equipped on the chuck structure, fixes and heats the wafer, and solders to the wafer.

根據本發明的一個實施例，該焊接頭可以包括：底座塊；加熱塊，其配備於該底座塊上，內置用於藉助於從外部接入的電源而發熱並加熱晶元的發熱體，為了提供真空力而具有延長至上部面的第四真空管線及第五真空管線；及吸附板，其藉助於該第四真空管線的真空力而固定於該加熱塊上，為了以真空力固定該晶元而具有與該第五真空管線連接的真空孔。According to an embodiment of the present invention, the welding head may include: a base block; a heating block, which is equipped on the base block, and has a built-in heating element for generating heat and heating the wafer by means of an external power supply, for providing a vacuum force and having a fourth vacuum line and a fifth vacuum line extended to the upper surface; and an adsorption plate, which is fixed on the heating block by means of the vacuum force of the fourth vacuum line, in order to fix the crystal with the vacuum force The unit has a vacuum hole connected to the fifth vacuum line.

發明效果Invention effect

本發明的卡盤板由在氧化鋁添加了鈦的材質構成，因而該卡盤板的導熱率低於氮化鋁。因此，即使在晶片和晶元的焊接製程中始終預熱該晶片，也可以防止該晶片與該晶元之間的軟釺焊物質被壓碎的現象。因此，可降低該晶片與該晶元之間的焊接不良率。Since the chuck plate of the present invention is made of a material in which titanium is added to alumina, the thermal conductivity of the chuck plate is lower than that of aluminum nitride. Therefore, even if the wafer is always preheated during the bonding process of the wafer and the die, it is possible to prevent the soft solder material between the die and the die from being crushed. Therefore, the defective rate of soldering between the wafer and the wafer can be reduced.

該卡盤板的位於最外側的真空孔之間的間隔，比位於與該最外側相比更內側的真空孔之間的間隔相對更窄。因此，即使在該卡盤結構物的邊緣部位，該晶片也可以完全地貼緊該卡盤結構物。The space between the outermost vacuum holes of the chuck plate is relatively narrower than the space between the innermost vacuum holes. Therefore, even at the edge of the chuck structure, the wafer can be completely pressed against the chuck structure.

該卡盤板可以利用真空力而與加熱盤貼緊。因此，該卡盤板無需另外的連結構件便能夠固定於該加熱盤。The chuck plate can be brought into close contact with the heating plate by vacuum force. Therefore, the chuck plate can be fixed to the heating plate without an additional connecting member.

另外，只解除該真空力，便可分離該加熱盤和該卡盤板並進行更換。因此，可以迅速地執行卡盤結構物的維護。In addition, the heating plate and the chuck plate can be separated and replaced only by releasing the vacuum force. Therefore, maintenance of the chuck structure can be promptly performed.

該卡盤結構物將該加熱盤中發生的熱藉由卡盤板傳遞給晶片。藉助於該卡盤板傳遞的熱，該晶片可以以始終既定的溫度加熱。因此，可以將該晶元有效地焊接於該晶片。The chuck structure transfers the heat generated in the heating plate to the wafer through the chuck plate. By means of the heat transferred by the chuck plate, the wafer can be heated at a consistently defined temperature. Therefore, the die can be efficiently bonded to the wafer.

本發明的焊接裝置可以利用該卡盤結構物，將該晶元穩定地焊接於該晶片。The welding device of the present invention can use the chuck structure to stably weld the wafer to the wafer.

下面參照圖式，對本發明實施例的卡盤板、具有該卡盤板的卡盤結構物及具有卡盤結構物的焊接裝置進行詳細說明。本發明可以施加多樣的變更，可以具有多種形態，在圖式中例示性圖示特定實施例，在正文中詳細說明。但是，這並非要將本發明限定於特定的揭露形態，應理解為包括本發明的思想及技術範圍內包含的所有變更、等同物以及替代物。在說明各圖的同時，針對類似的構成要素，使用了類似的元件符號。在圖式中，為了有助於本發明的明確性，結構物的尺寸比實際放大而進行圖示。Referring to the drawings, the chuck plate, the chuck structure with the chuck plate and the welding device with the chuck structure according to the embodiment of the present invention will be described in detail below. The present invention can be modified variously and can have various forms. Specific embodiments are shown by way of example in the drawings and described in detail in the text. However, this is not intended to limit the present invention to a specific disclosed form, and it should be understood that all changes, equivalents, and substitutions included within the idea and technical scope of the present invention are included. In describing each figure, similar reference numerals are used for similar constituent elements. In the drawings, in order to contribute to the clarity of the present invention, the dimensions of the structural objects are shown larger than actual size.

第一、第二等術語可以用於說明多樣的構成要素，但該構成要素不得由該術語所限定。該術語只用於將一個構成要素區別於其他構成要素的目的。例如，在不超出本發明的申請專利範圍的同時，第一構成要素可以命名為第二構成要素，類似地，第二構成要素也可以命名為第一構成要素。Terms such as first and second may be used to describe various constituent elements, but the constituent elements shall not be limited by the terms. The term is used only for the purpose of distinguishing one constituent element from other constituent elements. For example, while not exceeding the scope of the patent application of the present invention, a first constituent element can be named as a second constituent element, and similarly, a second constituent element can also be named as a first constituent element.

本申請中使用的術語只是為了說明特定的實施例而使用的，並非要限定本發明之意。只要在文理上未明確表示不同，單數的表現包括複數的表現。在本申請中，「包括」或「具有」等術語應理解為要指定說明書中記載的特徵、數字、步驟、動作、構成要素、部件或他們的組合的存在，並不預先排除一個或其以上的其他特徵或數字、步驟、動作、構成要素、部件或他們組合的存在或附加可能性。The terms used in the present application are used only to describe specific embodiments, and are not intended to limit the present invention. A singular expression includes a plural expression as long as there is no grammatical difference. In this application, terms such as "comprising" or "having" should be understood as specifying the existence of features, numbers, steps, actions, constituent elements, components or their combinations described in the specification, and do not preclude the existence of one or more than one The existence or additional possibility of other features or numbers, steps, actions, constituent elements, parts or their combination.

只要未不同地定義，包括技術性或科學性術語在內，在此使用的所有術語具有與本發明所屬技術領域的具有通常知識者一般理解的內容相同的意義。與一般使用的字典中定義的內容相同的術語，應解釋為與相關技術的文理上具有的意義一致的意義，只要在本申請中未明確定義，不得解釋為理想性地，過於形式上的意義。As long as they are not defined differently, all terms used herein, including technical or scientific terms, have the same meaning as those generally understood by those having ordinary knowledge in the technical field to which the present invention belongs. Terms that have the same content as those defined in commonly used dictionaries should be interpreted as meanings that are consistent with the literary meanings of related technologies. As long as they are not clearly defined in this application, they should not be interpreted as ideal, overly formal meanings .

第1圖是用於說明本發明一個實施例的卡盤結構物的剖面圖，第2圖是第1圖所示的卡盤結構物的俯視圖，第3圖是用於說明第1圖所示的卡盤板的俯視圖，第4圖是用於說明第1圖所示的卡盤板的仰視圖，第5圖是放大第1圖所示的A部分的放大剖面圖。Fig. 1 is a cross-sectional view of a chuck structure for explaining an embodiment of the present invention, Fig. 2 is a top view of the chuck structure shown in Fig. 1, and Fig. 3 is for explaining the chuck structure shown in Fig. 1 Fig. 4 is a bottom view for explaining the chuck plate shown in Fig. 1, and Fig. 5 is an enlarged cross-sectional view enlarging part A shown in Fig. 1 .

如果參照第1圖至第5圖，卡盤結構物100支撐晶片10。此時，在晶片10上可以形成有電路圖案。Referring to FIGS. 1 to 5 , the chuck structure 100 supports the wafer 10 . At this time, a circuit pattern may be formed on the wafer 10 .

卡盤結構物100包括加熱盤110、卡盤板120、引導環130、夾具140、電源電纜150及溫度感測器160。The chuck structure 100 includes a heating plate 110 , a chuck plate 120 , a guide ring 130 , a clamp 140 , a power cable 150 and a temperature sensor 160 .

加熱盤110具有大致圓盤形態，內置藉助於從外部接入的電源而發熱的發熱體112。The heating plate 110 has a substantially disc shape, and contains a heating element 112 that generates heat by an external power supply.

發熱體112可以配備得在加熱盤110的內側面構成既定的圖案。作為發熱體112的示例，可以為電極層、發熱線圈等。The heating element 112 may be arranged so as to form a predetermined pattern on the inner surface of the heating plate 110 . Examples of the heating element 112 may be electrode layers, heating coils, and the like.

加熱盤110具有延長至上部面的第一真空管線114及第二真空管線115。第一真空管線114和第二真空管線115可以分別從加熱盤110的下部面或側面延長到該上部面。第一真空管線114和第二真空管線115相互不連接。第一真空管線114與真空泵（圖上未示出）連接，提供用於吸附晶片10的真空力。第二真空管線115與真空泵（圖上未示出）連接，提供用於吸附卡盤板120的真空力。The heating plate 110 has a first vacuum line 114 and a second vacuum line 115 extending to the upper surface. The first vacuum line 114 and the second vacuum line 115 may extend from the lower face or side of the heating plate 110 to the upper face, respectively. The first vacuum line 114 and the second vacuum line 115 are not connected to each other. The first vacuum line 114 is connected to a vacuum pump (not shown in the figure) to provide vacuum force for sucking the wafer 10 . The second vacuum line 115 is connected to a vacuum pump (not shown in the figure) to provide vacuum force for absorbing the chuck plate 120 .

加熱盤110在上部面具有定位銷116。定位銷116用於對加熱盤110的卡盤板120進行排列，可以配備多個。定位銷116可以配置於加熱盤110的上部面邊緣。The heating plate 110 has positioning pins 116 on the upper surface. The positioning pins 116 are used for arranging the chuck plate 120 of the heating plate 110, and multiple positioning pins can be provided. The positioning pins 116 may be disposed on the upper surface edge of the heating plate 110 .

另外，加熱盤110具有沿著上部面邊緣形成的槽118。槽118可以用於固定引導環130。In addition, the heating plate 110 has grooves 118 formed along the edge of the upper face. Slot 118 may be used to secure guide ring 130 .

卡盤板120具有大致圓盤形態，放於加熱盤110上。卡盤板120在上部面支撐晶片10。The chuck plate 120 has a substantially disc shape and is placed on the heating plate 110 . The chuck plate 120 supports the wafer 10 on the upper surface.

卡盤板120為了吸附晶片10而具有與第一真空管線114連接的第三真空管線122。The chuck plate 120 has a third vacuum line 122 connected to the first vacuum line 114 for chucking the wafer 10 .

第三真空管線122具有真空槽122a及多個真空孔122b。The third vacuum line 122 has a vacuum groove 122a and a plurality of vacuum holes 122b.

真空槽122a在卡盤板120的下部面形成。例如，真空槽122a以卡盤板120的下部面中心為基準，可以具有由具有同心圓形態的槽和呈輻射狀延長的槽相結合的形狀，或具有圓形槽形狀。此時，真空槽122a為了防止該真空力的洩漏而不延長至卡盤板120的下部面邊緣。The vacuum groove 122 a is formed on the lower surface of the chuck plate 120 . For example, the vacuum groove 122a may have a combination of concentric circular grooves and radially elongated grooves or a circular groove shape based on the center of the lower surface of the chuck plate 120 . At this time, the vacuum groove 122a does not extend to the edge of the lower surface of the chuck plate 120 in order to prevent leakage of the vacuum force.

卡盤板120在放於加熱盤110上的同時，真空槽122a被加熱盤110的上部面限定而形成空間。另外，真空槽122a與第一真空管線114連接。While the chuck plate 120 is placed on the heating pan 110 , the vacuum groove 122 a is defined by the upper surface of the heating pan 110 to form a space. In addition, the vacuum tank 122 a is connected to the first vacuum line 114 .

真空孔122b貫通卡盤板120，從真空槽122a所形成的下部面延長至卡盤板120的上部面。真空孔122b相互隔開地排列。例如，真空孔122b可以排列成同心圓形狀或輻射形狀。The vacuum hole 122 b penetrates the chuck plate 120 and extends from the lower surface formed by the vacuum groove 122 a to the upper surface of the chuck plate 120 . The vacuum holes 122b are arranged to be spaced apart from each other. For example, the vacuum holes 122b may be arranged in a concentric shape or a radial shape.

因此，第三真空管線122與第一真空管線114連接，可以利用藉由第一真空管線114而提供的真空力來吸附晶片10。Therefore, the third vacuum line 122 is connected to the first vacuum line 114 , and the wafer 10 can be adsorbed by the vacuum force provided by the first vacuum line 114 .

另一方面，在卡盤板120中，位於最外側的真空孔122b之間的間隔，可以配備得比位於與該最外側相比更內側的真空孔122b間隔相對較窄。具體而言，位於該最外側的真空孔122b之間的角度可以是位於與該最外側相比更內側的真空孔122b之間角度的一半。例如，位於該最外側的真空孔122b之間的角度可以為約15度，位於與該最外側相比更內側的真空孔122b之間的角度為約30度。On the other hand, in the chuck plate 120, the intervals between the outermost vacuum holes 122b may be arranged to be relatively narrower than the intervals between the outermost vacuum holes 122b. Specifically, the angle between the outermost vacuum holes 122b may be half of the angle between the outermost vacuum holes 122b. For example, the angle between the outermost vacuum holes 122b may be about 15 degrees, and the angle between the outermost vacuum holes 122b may be about 30 degrees.

因此，即使在卡盤板120的邊緣，也可以藉由真空孔122b而穩定地提供真空力。因此，即使在卡盤板120的邊緣，晶片10也可以貼緊卡盤板120，可以防止晶片10翹起。Therefore, even at the edge of the chuck plate 120, a vacuum force can be stably provided by the vacuum hole 122b. Therefore, even at the edge of the chuck plate 120, the wafer 10 can be tightly adhered to the chuck plate 120, and the wafer 10 can be prevented from being lifted.

另外，卡盤板120在下部面具有以與第二真空管線115連接的方式配備的真空槽123，以便真空吸附於加熱盤110。In addition, the chuck plate 120 has a vacuum groove 123 connected to the second vacuum line 115 on the lower surface so as to be vacuum-adsorbed to the heating plate 110 .

真空槽123在卡盤板120的下部面形成。例如，真空槽123以卡盤板120的下部面中心為基準，可以具有由具有同心圓形態的槽和呈輻射狀延長的槽相結合的形狀，或具有圓形槽形狀。此時，真空槽123為了防止該真空力的洩漏而不延長至卡盤板120的下部面邊緣。另外，如第4圖所示，真空槽123可以形成得不與第三真空管線122相互連接。The vacuum groove 123 is formed on the lower surface of the chuck plate 120 . For example, the vacuum groove 123 may have a combination of concentric circular grooves and radially elongated grooves or a circular groove shape based on the center of the lower surface of the chuck plate 120 . At this time, the vacuum groove 123 does not extend to the edge of the lower surface of the chuck plate 120 in order to prevent leakage of the vacuum force. In addition, as shown in FIG. 4 , the vacuum groove 123 may be formed not to be interconnected with the third vacuum line 122 .

卡盤板120在放於加熱盤110上的同時，真空槽123被加熱盤110的上部面限定而形成空間。另外，真空槽123與第二真空管線115連接。While the chuck plate 120 is placed on the heating pan 110 , the vacuum chamber 123 is defined by the upper surface of the heating pan 110 to form a space. In addition, the vacuum tank 123 is connected to the second vacuum line 115 .

真空槽123與第二真空管線115連接，利用藉由第二真空管線115而提供的真空力，卡盤板120可以在加熱盤110上貼緊、固定。因此，可以使卡盤板120的扭曲或彎曲實現最小化，平坦地支撐卡盤板120上的晶片10。The vacuum groove 123 is connected to the second vacuum line 115 , and the chuck plate 120 can be tightly attached and fixed on the heating plate 110 by using the vacuum force provided by the second vacuum line 115 . Therefore, it is possible to minimize twisting or bending of the chuck plate 120 and flatly support the wafer 10 on the chuck plate 120 .

加熱盤110和卡盤板120可以藉助於藉由第二真空管線115及真空槽123而提供的該真空力保持貼緊的狀態。因此，不需要用於連結加熱盤110與卡盤板120的另外的連結構件。The heating plate 110 and the chuck plate 120 can be kept in close contact with the vacuum force provided by the second vacuum line 115 and the vacuum groove 123 . Therefore, an additional connecting member for connecting the heating plate 110 and the chuck plate 120 is not required.

另外，可以解除藉由第一真空管線114和第二真空管線115而提供的該真空力，分離加熱盤110和卡盤板120並進行更換。因此，可以迅速地執行卡盤結構物100的維護。In addition, the vacuum force provided by the first vacuum line 114 and the second vacuum line 115 may be released, and the heating plate 110 and the chuck plate 120 may be separated and replaced. Therefore, maintenance of the chuck structure 100 can be promptly performed.

另一方面，加熱盤110的上部面和卡盤板120的下部面分別具有超過約10㎛的平坦度時，加熱盤110與卡盤板120之間會存在細微的間隔。因此，該真空力會藉由加熱盤110與卡盤板120之間而洩漏。On the other hand, when the upper surface of the heating plate 110 and the lower surface of the chuck plate 120 each have a flatness exceeding about 10㎛, there will be a slight gap between the heating plate 110 and the chuck plate 120 . Therefore, the vacuum force will leak through between the heating plate 110 and the chuck plate 120 .

加熱盤110的上部面與卡盤板120的下部面分別具有約10㎛以下的平坦度，較佳地，具有7 ㎛以下的平坦度。此時，加熱盤110與卡盤板120可以貼緊，可以防止該真空力藉由加熱盤110與卡盤板120之間而洩漏。The upper surface of the heating plate 110 and the lower surface of the chuck plate 120 have a flatness of about 10㎛ or less, preferably, a flatness of 7㎛ or less. At this time, the heating plate 110 and the chuck plate 120 can be in close contact, which can prevent the vacuum force from leaking through the space between the heating plate 110 and the chuck plate 120 .

卡盤板120將加熱盤110中發生的熱傳遞給晶片10。此時，晶片10可以保持約140至150℃的溫度，以便容易地實現晶元（圖上未示出）與晶片10的焊接。The chuck plate 120 transfers heat generated in the heating plate 110 to the wafer 10 . At this time, the temperature of the wafer 10 can be maintained at about 140 to 150° C., so as to easily realize the bonding of the die (not shown in the figure) and the wafer 10 .

加熱盤110可以由陶瓷材質構成。作為該陶瓷材質的示例，可以為氮化鋁（AlN）。該氮化鋁具有高導熱率，因而加熱盤110可以均一地傳遞發熱體112中發生的熱。另外，加熱盤110可以使卡盤板120的溫度分布均一，均一地加熱晶片10。The heating plate 110 may be made of ceramic material. An example of the ceramic material may be aluminum nitride (AlN). This aluminum nitride has high thermal conductivity, so the heating plate 110 can uniformly transfer the heat generated in the heat generating body 112 . In addition, the heating plate 110 can make the temperature distribution of the chuck plate 120 uniform, and can heat the wafer 10 uniformly.

卡盤板120可以在陶瓷材質中添加鈦而構成。例如，卡盤板120可以在該氧化鋁（Al2 O3 ）中添加鈦。在該氧化鋁（Al2 O3 ）中添加鈦時，可以進一步降低卡盤板120的導熱率。The chuck plate 120 can be formed by adding titanium to a ceramic material. For example, the chuck plate 120 may have titanium added to the aluminum oxide (Al 2 O 3 ). When titanium is added to the alumina (Al 2 O 3 ), the thermal conductivity of the chuck plate 120 can be further reduced.

在卡盤板120中，當相對於該氧化鋁100重量份，該鈦添加不足約10重量份時，卡盤板120的氣孔率增加微弱，卡盤板120的導熱率會與純氧化鋁類似。In the chuck plate 120, when the addition of titanium is less than about 10 parts by weight relative to 100 parts by weight of the alumina, the porosity of the chuck plate 120 increases slightly, and the thermal conductivity of the chuck plate 120 is similar to that of pure alumina. .

在卡盤板120中，當相對於該氧化鋁100重量份，該鈦添加超過約20重量份時，卡盤板120的氣孔率過度增加，導熱率大幅下降。而且，卡盤板120的燒結密度減小，卡盤板120的強度降低，真空力會藉由卡盤板120的氣孔而損失。In the chuck plate 120, when the addition of titanium exceeds about 20 parts by weight with respect to 100 parts by weight of the alumina, the porosity of the chuck plate 120 increases excessively, and the thermal conductivity significantly decreases. Moreover, the sintered density of the chuck plate 120 decreases, the strength of the chuck plate 120 decreases, and the vacuum force is lost through the pores of the chuck plate 120 .

在卡盤板120中，當相對於該氧化鋁100重量份，該鈦添加約10至20重量份時，卡盤板120的氣孔率增加，滿足真空力幾乎不藉由卡盤板120的氣孔而損失的程度，卡盤板120的導熱率也下降。另外，卡盤板120的燒結密度約3.8g/㎤，與純氧化鋁燒結密度約3.9g/㎤相比略低，卡盤板120的強度不下降。In the chuck plate 120, when the titanium is added about 10 to 20 parts by weight with respect to 100 parts by weight of the alumina, the porosity of the chuck plate 120 increases, and the vacuum force hardly passes through the pores of the chuck plate 120. And to the extent of the loss, the thermal conductivity of the chuck plate 120 also decreases. In addition, the sintered density of the chuck plate 120 is about 3.8 g/㎤, which is slightly lower than the sintered density of pure alumina of about 3.9 g/㎤, and the strength of the chuck plate 120 does not decrease.

因此，卡盤板120可以相對於該氧化鋁100重量份，添加約10至20重量份的鈦而構成。Therefore, the chuck plate 120 can be configured by adding about 10 to 20 parts by weight of titanium with respect to 100 parts by weight of the alumina.

卡盤板120的導熱率不足約5 W/m•k時，卡盤板120的導熱率相對較低。因此，會無法將加熱盤110中發生的熱充分傳遞給晶片10，或將加熱盤110中發生的熱傳遞給晶片10需要大量時間。不過，為了該晶元的焊接，即使焊接頭以約450度的高溫，對晶片10和該晶元進行熱壓焊接，也可以阻止卡盤板120被急速加熱。When the thermal conductivity of the chuck plate 120 is less than about 5 W/m·k, the thermal conductivity of the chuck plate 120 is relatively low. Therefore, it may not be possible to sufficiently transfer the heat generated in the heating pan 110 to the wafer 10 , or it may take a lot of time to transfer the heat generated in the heating pan 110 to the wafer 10 . However, for the bonding of the wafer, even if the bonding head performs thermocompression bonding on the wafer 10 and the wafer at a high temperature of about 450 degrees, the rapid heating of the chuck plate 120 can be prevented.

當卡盤板120的導熱率超過約20 W/m•k時，卡盤板120的導熱率相對較高。因此，將加熱盤110中發生的熱過度傳遞給晶片10，晶片10與該晶元之間的軟釺焊物質會被壓碎。另外，該焊接頭以約450度的高溫熱壓焊接晶片10與該晶元時，卡盤板120被比較急速地加熱，晶片10與該晶元之間的軟釺焊物質會更充分地被壓碎。When the thermal conductivity of the chuck plate 120 exceeds about 20 W/m•k, the thermal conductivity of the chuck plate 120 is relatively high. Therefore, the heat generated in the heating plate 110 is excessively transferred to the wafer 10, and the solder material between the wafer 10 and the die is crushed. In addition, when the welding head heats and presses the wafer 10 and the wafer at a high temperature of about 450 degrees, the chuck plate 120 is heated relatively rapidly, and the solder material between the wafer 10 and the wafer will be more fully absorbed. crush.

當卡盤板120的導熱率為約5至20 W/m•k時，卡盤板120可以以該軟釺焊物質不被壓碎的程度，將加熱盤110中發生的熱適宜地傳遞給晶片10。另外，為了該晶元的焊接，即使焊接頭以約450度的高溫熱壓焊接晶片10與該晶元，也可以阻止卡盤板120被急速加熱。因此，可以防止晶片10與該晶元之間的軟釺焊物質被壓碎。When the thermal conductivity of the chuck plate 120 is about 5 to 20 W/m·k, the chuck plate 120 can properly transfer the heat generated in the heating plate 110 to the extent that the soldering material is not crushed. Wafer 10. In addition, for the bonding of the wafer, even if the bonding head heat-press-bonds the wafer 10 and the wafer at a high temperature of about 450 degrees, the chuck plate 120 can be prevented from being rapidly heated. Therefore, it is possible to prevent the soldering material between the wafer 10 and the die from being crushed.

因此，即使為了晶片10與該晶元的焊接而始終預熱晶片10，也可以防止晶片10與該晶元之間的軟釺焊物質被壓碎的現象。因此，可以防止晶片10與該晶元之間焊接不良。Therefore, even if the wafer 10 is always preheated for the bonding of the wafer 10 and the die, it is possible to prevent the soldering material between the wafer 10 and the die from being crushed. Therefore, poor bonding between the wafer 10 and the die can be prevented.

另一方面，卡盤板120也可以只由導熱率比該氮化鋁低的氧化鋁（Al2 O3 ）構成。On the other hand, the chuck plate 120 may be composed only of aluminum oxide (Al 2 O 3 ) having a lower thermal conductivity than the aluminum nitride.

卡盤板120具有用於容納定位銷116的容納槽124。容納槽124可以在與加熱盤110的定位銷116對應的位置形成。例如，容納槽124也可以配置於卡盤板120的邊緣。The chuck plate 120 has a receiving groove 124 for receiving the positioning pin 116 . The receiving groove 124 may be formed at a position corresponding to the positioning pin 116 of the heating pan 110 . For example, the receiving groove 124 can also be configured on the edge of the chuck plate 120 .

卡盤板120安放於加熱盤110的上部面時，加熱盤110的定位銷116可以插入於卡盤板120的容納槽124。因此，加熱盤110與卡盤板120可以準確地排列。When the chuck plate 120 is placed on the upper surface of the heating plate 110 , the positioning pin 116 of the heating plate 110 can be inserted into the receiving groove 124 of the chuck plate 120 . Therefore, the heating plate 110 and the chuck plate 120 can be accurately aligned.

以上說明了在加熱盤110中配備定位銷116、在卡盤板120中形成容納槽124的情形，但也可以在加熱盤110中形成容納槽、在卡盤板120中配備定位銷。The above describes the case where the positioning pins 116 are provided in the heating plate 110 and the receiving grooves 124 are formed in the chuck plate 120 . However, the receiving grooves may be formed in the heating plate 110 and the positioning pins are provided in the chuck plate 120 .

另外，卡盤板120具有沿著上部面邊緣形成的槽126。槽126可以用於安放夾具140。In addition, the chuck plate 120 has a slot 126 formed along the edge of the upper face. Slot 126 may be used to receive clamp 140 .

引導環130掛接於沿著加熱盤110的上面邊緣而形成的槽118，引導加熱盤110的外周。Guide ring 130 is engaged with groove 118 formed along the upper edge of heating pan 110 to guide the outer periphery of heating pan 110 .

具體而言，引導環130具有掛接棱132，掛接棱132掛接於槽118，從而引導環130加裝於加熱盤110。Specifically, the guide ring 130 has a hooking edge 132 , and the hooking edge 132 is hooked to the groove 118 , so that the guide ring 130 is additionally installed on the heating plate 110 .

另一方面，引導環130的上面和加熱盤110的上面可以位於相同的高度。此時，在將引導環130加裝於加熱盤110的狀態下，可以將卡盤板120容易地安放於加熱盤110的上部面。On the other hand, the upper surface of the guide ring 130 and the upper surface of the heating plate 110 may be located at the same height. At this time, the chuck plate 120 can be easily placed on the upper surface of the heating plate 110 in a state where the guide ring 130 is attached to the heating plate 110 .

另外，在引導環130的上面處在高於加熱盤110上面位置的情況下，當將卡盤板120安放於加熱盤110的上部面時，可以將引導環130用作排列基準。In addition, when the upper surface of the guide ring 130 is higher than the upper surface of the heating pan 110 , the guide ring 130 can be used as an alignment reference when the chuck plate 120 is placed on the upper surface of the heating pan 110 .

夾具140以覆蓋卡盤板120的上部面邊緣的狀態固定於引導環。夾具140可以藉助於連結螺絲142而固定於引導環130。The jig 140 is fixed to the guide ring in a state covering the upper surface edge of the chuck plate 120 . The clamp 140 may be fixed to the guide ring 130 by means of a fastening screw 142 .

作為一個示例，夾具140配備多個，可以部分地覆蓋卡盤板120的上部面邊緣。作為另一示例，夾具140也可以具有大致環形態，整體地覆蓋卡盤板120的上部面邊緣。As an example, a plurality of jigs 140 may be provided to partially cover the upper face edge of the chuck plate 120 . As another example, the clamp 140 may also have a generally ring shape, integrally covering the upper face edge of the chuck plate 120 .

夾具140以覆蓋卡盤板120的上部面邊緣的狀態固定於引導環130，因而夾具140可以將卡盤板120向下方加壓。因此，夾具140可以使卡盤板120貼緊加熱盤110。Since the jig 140 is fixed to the guide ring 130 in a state covering the upper surface edge of the chuck plate 120 , the jig 140 can press the chuck plate 120 downward. Therefore, the jig 140 can make the chuck plate 120 close to the heating plate 110 .

夾具140具有掛接棱144，掛接棱144可以放在卡盤板120的槽126中。因此，可以使夾具140的上面和卡盤板120的上面位於相同的高度。因此，可以在沒有夾具140的妨礙的情況下，將晶片10穩定地移送到卡盤板120上部面時進行安放。The clamp 140 has a catching edge 144 that can be placed in the slot 126 of the chuck plate 120 . Therefore, the upper surface of the jig 140 and the upper surface of the chuck plate 120 can be positioned at the same height. Therefore, the wafer 10 can be stably transferred to the upper surface of the chuck plate 120 for mounting without being hindered by the jig 140 .

引導環130及夾具140可以由具有比加熱盤110低的導熱率的材質構成。例如，引導環130及夾具140可以由氧化鋁（Al2 O3 ）材質構成。另外，引導環130及夾具140可以由與卡盤板120相同的材質構成。The guide ring 130 and the jig 140 may be made of a material having a lower thermal conductivity than the heating plate 110 . For example, the guide ring 130 and the clamp 140 may be made of aluminum oxide (Al 2 O 3 ). In addition, the guide ring 130 and the jig 140 may be made of the same material as that of the chuck plate 120 .

引導環130及夾具140的導熱率比加熱盤110的導熱率低，因而引導環130及夾具140可以防止藉由加熱盤110側面的熱損失。The thermal conductivity of the guide ring 130 and the clamp 140 is lower than that of the heating plate 110 , so the guide ring 130 and the clamp 140 can prevent heat loss through the side of the heating plate 110 .

電源電纜150延長至加熱盤110的內部，與發熱體112連接，提供發熱體112發熱所需的電源。The power cable 150 is extended to the inside of the heating plate 110, connected to the heating element 112, and provides the power required for the heating element 112 to generate heat.

溫度感測器160從外部延長至加熱盤110的內部，測量被發熱體112加熱的加熱盤110的溫度。可以利用溫度感測器160測量的溫度來控制發熱體112的溫度。藉由控制發熱體112的溫度，可以調節加熱盤110的溫度。The temperature sensor 160 extends from the outside to the inside of the heating plate 110 to measure the temperature of the heating plate 110 heated by the heating element 112 . The temperature of the heating body 112 can be controlled using the temperature measured by the temperature sensor 160 . The temperature of the heating plate 110 can be adjusted by controlling the temperature of the heating element 112 .

溫度感測器160例如可以為熱電偶。The temperature sensor 160 can be, for example, a thermocouple.

卡盤結構物100將加熱盤110中發生的熱，藉由卡盤板120傳遞給晶片10。藉助於卡盤板120傳遞的熱，晶片10可以始終以既定的溫度被加熱。因此，可以將該晶元有效焊接於晶片10。The chuck structure 100 transfers the heat generated in the heating plate 110 to the wafer 10 through the chuck plate 120 . With the heat transferred from the chuck plate 120, the wafer 10 can always be heated at a predetermined temperature. Therefore, the die can be efficiently bonded to the wafer 10 .

第6圖是用於說明本發明一個實施例的焊接裝置的概略剖面圖。Fig. 6 is a schematic sectional view illustrating a welding device according to an embodiment of the present invention.

如果參照第6圖，焊接裝置300包括卡盤結構物100及焊接頭200。Referring to FIG. 6 , the welding device 300 includes a chuck structure 100 and a welding head 200 .

卡盤結構物100包括加熱盤110、卡盤板120、引導環130、夾具140、電源電纜150及溫度感測器160，對卡盤結構物100的具體說明與參照第1圖至第5圖的說明實質上相同，因而省略。The chuck structure 100 includes a heating plate 110, a chuck plate 120, a guide ring 130, a clamp 140, a power cable 150, and a temperature sensor 160. For a specific description of the chuck structure 100, refer to FIGS. 1 to 5 The descriptions of are substantially the same and are therefore omitted.

卡盤結構物100將加熱盤110中發生的熱，藉由卡盤板120傳遞給晶片10，因而被卡盤結構物100支撐的晶片10可以始終以既定的溫度被加熱。因此，焊接頭200可以將晶元20迅速焊接於晶片10。The chuck structure 100 transfers the heat generated in the heating plate 110 to the wafer 10 through the chuck plate 120 , so the wafer 10 supported by the chuck structure 100 can always be heated at a predetermined temperature. Therefore, the bonding head 200 can quickly bond the die 20 to the wafer 10 .

第7圖是用於說明第6圖所示的焊接頭的概略剖面圖，第8圖是用於說明第7圖所示的焊接頭中加熱塊的開口的俯視圖。Fig. 7 is a schematic sectional view for explaining the soldering head shown in Fig. 6, and Fig. 8 is a plan view for explaining the opening of the heating block in the soldering head shown in Fig. 7 .

如果參照第7圖及第8圖，焊接頭200用於將晶元20移送到被卡盤結構物支撐的晶片10，並焊接於該晶片10，包括底座塊210、加熱塊220及吸附板230。雖然圖中未示出，焊接頭200為了移送晶元20而可以配備得能夠進行水平移動、上下移動、旋轉、翻轉等。If referring to FIG. 7 and FIG. 8, the welding head 200 is used to transfer the wafer 20 to the wafer 10 supported by the chuck structure, and to be soldered to the wafer 10, including a base block 210, a heating block 220 and an adsorption plate 230. . Although not shown in the figure, the bonding head 200 may be equipped to be able to move horizontally, move up and down, rotate, flip, etc. in order to transfer the wafer 20 .

另外，焊接頭200為了晶元20與晶片10的焊接而可以配備得使吸附板230朝向下方。In addition, the bonding head 200 may be equipped so that the adsorption plate 230 faces downward for the bonding of the die 20 and the wafer 10 .

底座塊210包括第一塊212及第二塊214。The base block 210 includes a first block 212 and a second block 214 .

第一塊212由金屬材質構成。作為該金屬材質的示例，可以為不鏽鋼材質。The first block 212 is made of metal material. As an example of the metal material, it may be made of stainless steel.

第二塊214配備於第一塊212上。第二塊214可以由具有比加熱塊220低的導熱率的陶瓷材質構成。作為該陶瓷材質的示例，可以為氧化鋁（Al2 O3 ）。由於第二塊214的導熱率比加熱塊220的導熱率低，因而第二塊214可以減少加熱塊220中發生的熱傳遞到第一塊212。The second block 214 is provided on the first block 212 . The second block 214 may be made of a ceramic material having a lower thermal conductivity than the heating block 220 . An example of the ceramic material may be aluminum oxide (Al 2 O 3 ). Since the thermal conductivity of the second block 214 is lower than that of the heating block 220 , the second block 214 may reduce heat transfer occurring in the heating block 220 to the first block 212 .

另外，底座塊210還包括第三塊216。In addition, the base block 210 also includes a third block 216 .

第三塊216配備於第一塊212與第二塊214之間。第三塊216發揮緩衝塊作用，減少第二塊214的熱向第一塊212傳遞。第三塊216可以由陶瓷材質構成，作為該陶瓷材質的示例，可以為氧化鋁。The third block 216 is disposed between the first block 212 and the second block 214 . The third block 216 acts as a buffer block to reduce heat transfer from the second block 214 to the first block 212 . The third block 216 may be made of ceramic material, such as alumina, as an example of the ceramic material.

加熱塊220配備於底座塊210，具體而言，配備於第二塊214上。加熱塊220內置發熱體222。發熱體222可以由金屬材質構成。發熱體222藉助於從外部接入的電源而發熱，利用該熱，對吸附於吸附板230的晶元20進行加熱。可以利用該熱，熔化晶元20的凸塊。例如，為了熔化晶元20的凸塊，發熱體222可以將晶元20瞬間加熱至約450℃。The heating block 220 is provided on the base block 210 , specifically, on the second block 214 . The heating block 220 has a built-in heating element 222 . The heating element 222 can be made of metal material. The heating element 222 generates heat by means of an external power supply, and uses the heat to heat the wafer 20 adsorbed on the adsorption plate 230 . The heat can be used to melt the bumps of the die 20 . For example, in order to melt the bumps of the die 20 , the heating element 222 may heat the die 20 to about 450° C. instantaneously.

可以以絕緣性和導熱率優秀的陶瓷材質構成加熱塊220。例如，加熱塊220可以為氮化鋁（AlN）材質。此時，該導熱率可以為約170 W/m•k以上。The heating block 220 can be made of a ceramic material excellent in insulation and thermal conductivity. For example, the heating block 220 may be made of aluminum nitride (AlN). At this time, the thermal conductivity may be about 170 W/m•k or more.

加熱塊220的導熱率優秀，因而可以利用發熱體222中發生的熱，迅速加熱晶元20。The heating block 220 has excellent thermal conductivity, and thus can rapidly heat the wafer 20 by utilizing the heat generated in the heating element 222 .

加熱塊220為了提供真空力而具有延長至上部面的第四真空管線224及第五真空管線226。The heating block 220 has a fourth vacuum line 224 and a fifth vacuum line 226 extending to the upper surface to provide a vacuum force.

第四真空管線224和第五真空管線226不相互連接，分別提供該真空力。例如，第四真空管線224貫通加熱塊220的邊緣部位的上下，第五真空管線226貫通加熱塊220的中央部位的上下。特別是第四真空管線224與在加熱塊220上部面按既定長度形成的槽225連接。因此，藉由第四真空管線224提供的真空力可以在更大範圍進行作用。The fourth vacuum line 224 and the fifth vacuum line 226 are not connected to each other and provide the vacuum force respectively. For example, the fourth vacuum line 224 runs through the top and bottom of the edge of the heating block 220 , and the fifth vacuum line 226 runs through the top and bottom of the center of the heating block 220 . In particular, the fourth vacuum line 224 is connected to a groove 225 formed at a predetermined length on the upper surface of the heating block 220 . Therefore, the vacuum force provided by the fourth vacuum line 224 can act in a wider range.

作為一個示例，如第7圖及第8圖所示，第四真空管線224和第五真空管線226可以延長至底座塊210進行配備。作為另一示例，雖然圖中未示出，第四真空管線224和第五真空管線226也可以不延長至底座塊210，而只配備於加熱塊220。As an example, as shown in FIGS. 7 and 8 , the fourth vacuum line 224 and the fifth vacuum line 226 can be extended to the base block 210 for provisioning. As another example, although not shown in the figure, the fourth vacuum line 224 and the fifth vacuum line 226 may not extend to the base block 210 , but are only equipped on the heating block 220 .

吸附板230配備於加熱塊220上。吸附板230藉助於第四真空管線224的真空力而固定於加熱塊220的上部面。利用第四真空管線224提供真空力或解除該真空力，從而可以更換吸附板230。因此，當吸附板230毀損或晶元20的大小變更時，可以選擇性地只更換吸附板230。The adsorption plate 230 is provided on the heating block 220 . The adsorption plate 230 is fixed on the upper surface of the heating block 220 by the vacuum force of the fourth vacuum line 224 . The fourth vacuum line 224 is used to provide vacuum force or release the vacuum force, so that the adsorption plate 230 can be replaced. Therefore, when the adsorption plate 230 is damaged or the size of the wafer 20 is changed, only the adsorption plate 230 can be selectively replaced.

另外，吸附板230具有真空孔232。真空孔232與加熱塊220的第五真空管線226連接。因此，利用藉由第五真空管線226提供的真空力，可以對放在吸附板230上的晶元20進行固定。In addition, the adsorption plate 230 has vacuum holes 232 . The vacuum hole 232 is connected to the fifth vacuum line 226 of the heating block 220 . Therefore, the wafer 20 placed on the adsorption plate 230 can be fixed by using the vacuum force provided by the fifth vacuum line 226 .

在利用吸附板230固定晶元20的狀態下，焊接頭200可以移動並將晶元20層疊於該晶片10上。另外，可以利用吸附板230，朝向該晶片10對晶元20加壓。In a state where the die 20 is fixed by the suction plate 230 , the bonding head 200 can move and stack the die 20 on the wafer 10 . In addition, the wafer 20 may be pressurized toward the wafer 10 by the adsorption plate 230 .

焊接頭200還包括冷卻管線240。The welding head 200 also includes a cooling line 240 .

冷卻管線240冷卻加熱塊220而使晶元20冷卻。隨著晶元20的冷卻，晶元20的凸塊被冷卻而可以形成焊料。此時，藉助於冷卻管線240，晶元20可以冷卻到約100℃。The cooling line 240 cools the heating block 220 to cool the die 20 . As the die 20 cools, the bumps of the die 20 are cooled so that solder can be formed. At this time, the wafer 20 may be cooled to about 100° C. by means of the cooling line 240 .

具體而言，冷卻管線240包括第一冷卻管線242和第二冷卻管線244。Specifically, the cooling line 240 includes a first cooling line 242 and a second cooling line 244 .

第一冷卻管線242從底座塊210延長至第二塊214的上部面。藉由第一冷卻管線242，將冷卻流體供應到加熱塊220。作為該冷卻流體的示例，可以是空氣、氣體等。該冷卻流體與加熱塊220直接接觸並冷卻加熱塊220。The first cooling line 242 extends from the base block 210 to the upper face of the second block 214 . A cooling fluid is supplied to the heating block 220 via a first cooling line 242 . As an example of the cooling fluid, it may be air, gas, or the like. The cooling fluid is in direct contact with the heating block 220 and cools the heating block 220 .

第二冷卻管線244在底座塊210中配備於第一塊212的內部，冷卻第一塊212。隨著第一塊212冷卻，藉由熱傳導，第三塊216、第二塊214及加熱塊220可以被冷卻。因此，第二冷卻管線244可以輔助地冷卻加熱塊220。The second cooling line 244 is provided inside the first block 212 in the base block 210 to cool the first block 212 . As the first block 212 cools, the third block 216, the second block 214, and the heating block 220 may be cooled by heat conduction. Accordingly, the second cooling line 244 may assist in cooling the heating block 220 .

主要利用第一冷卻管線242冷卻加熱塊220，利用第二冷卻管線244輔助地進行冷卻。因此，利用冷卻管線240，可以迅速地冷卻加熱塊220。隨著加熱塊220被冷卻，可以迅速冷卻固定於吸附板230的晶元20的凸塊而形成該焊料。The heat block 220 is cooled primarily by the first cooling line 242 and auxiliary by the second cooling line 244 . Therefore, using the cooling line 240, the heating block 220 can be rapidly cooled. As the heating block 220 is cooled, the solder can be formed by rapidly cooling the bumps of the die 20 fixed on the adsorption plate 230 .

另一方面，加熱塊220具備使冷卻管線240，具體而言，使第一冷卻管線242部分地露出的開口227。例如，開口227可以為在貫通加熱塊220的上下的同時延長至側面的槽。On the other hand, the heating block 220 has an opening 227 for partially exposing the cooling line 240 , specifically, the first cooling line 242 . For example, the opening 227 may be a groove extending to the side while penetrating the heating block 220 up and down.

開口227可以在延長至底座塊210上部面的多個第一冷卻管線242中，使一部分選擇性地露出，或使各個第一冷卻管線242部分地露出。The opening 227 may selectively expose a part of the plurality of first cooling lines 242 extending to the upper surface of the base block 210 , or may partially expose each of the first cooling lines 242 .

特別是在開口227在多個第一冷卻管線242中使一部分選擇性地露出的情況下，如果開口227配置於加熱塊220的一側，則加熱塊220與吸附板230的溫度分布會不均一。因此，在晶元20上形成的焊料的品質會下降。Especially in the case where the opening 227 is partially exposed among the plurality of first cooling lines 242, if the opening 227 is arranged on one side of the heating block 220, the temperature distribution between the heating block 220 and the adsorption plate 230 will be uneven. . Therefore, the quality of the solder formed on the die 20 may be degraded.

因此，在開口227在多個第一冷卻管線242中使一部分選擇性地露出的情況下，開口227可以以加熱塊220的中心為基準對稱地配置。此時，使加熱塊220與吸附板230的溫度分布相對地均一，從而可以提高在晶元20上形成的焊料的品質。Therefore, when the opening 227 selectively exposes a part of the plurality of first cooling lines 242 , the opening 227 may be arranged symmetrically with respect to the center of the heating block 220 . At this time, the temperature distribution of the heating block 220 and the adsorption plate 230 is relatively uniform, so that the quality of the solder formed on the wafer 20 can be improved.

藉由第一冷卻管線242而提供的冷卻流體中的一部分提供給加熱塊220，使加熱塊220冷卻，該冷卻流體中其餘者藉由開口227提供給吸附板230，直接冷卻吸附板230。即，藉由第一冷卻管線242而提供的冷卻流體冷卻加熱塊220，冷卻吸附板230的同時，可以直接冷卻吸附板230。另外，藉由第一冷卻管線242而提供的冷卻流體可以在冷卻加熱塊220和吸附板230後，藉由開口227排出到外部。Part of the cooling fluid provided by the first cooling line 242 is supplied to the heating block 220 to cool the heating block 220 , and the rest of the cooling fluid is supplied to the adsorption plate 230 through the opening 227 to directly cool the adsorption plate 230 . That is, the cooling fluid provided by the first cooling pipeline 242 cools the heating block 220 , and while cooling the adsorption plate 230 , the adsorption plate 230 can be directly cooled. In addition, the cooling fluid provided by the first cooling line 242 may be discharged to the outside through the opening 227 after cooling the heating block 220 and the adsorption plate 230 .

因此，可以更迅速地冷卻固定於吸附板230的晶元20的凸塊。因此，藉助於加熱塊220，可以急速冷卻晶元20的熔化的凸塊，形成形狀良好的焊料。Therefore, the bumps of the die 20 fixed on the adsorption plate 230 can be cooled more rapidly. Therefore, by means of the heating block 220, the melted bump of the die 20 can be rapidly cooled to form a well-shaped solder.

另一方面，開口227具有在貫通加熱塊220的上下的同時延長至側面的槽形態，因而容易加工加熱塊220而形成開口227。On the other hand, since the opening 227 has a groove shape extending to the side while penetrating the top and bottom of the heating block 220 , it is easy to process the heating block 220 to form the opening 227 .

另外，開口227具有在貫通加熱塊220的上下的同時延長至側面的槽形態，因而藉助於開口227，吸附板230可以相對較多地露出。因此，藉由第一冷卻管線242而提供的冷卻流體在藉由開口227排出到外部的同時，與吸附板230接觸的面積會增加。因此，可以進一步提高吸附板230被藉由第一冷卻管線242而提供的冷卻流體直接冷卻的效果。In addition, the opening 227 has a groove shape extending to the side while penetrating the top and bottom of the heating block 220 , so the adsorption plate 230 can be relatively exposed through the opening 227 . Therefore, while the cooling fluid supplied through the first cooling line 242 is discharged to the outside through the opening 227 , the area in contact with the adsorption plate 230 increases. Therefore, the effect of directly cooling the adsorption plate 230 by the cooling fluid provided through the first cooling pipeline 242 can be further improved.

在開口227露出第一冷卻管線242的區域中約不足30%的情況下，藉由第一冷卻管線242而提供的冷卻流體直接冷卻吸附板230的效果會相對低下。因此，藉由第一冷卻管線242而提供的冷卻流體難以急速冷卻晶元20的凸塊。In the case where the opening 227 exposes less than 30% of the area of the first cooling line 242 , the effect of the cooling fluid provided by the first cooling line 242 directly cooling the adsorption plate 230 is relatively low. Therefore, it is difficult for the cooling fluid provided by the first cooling pipeline 242 to rapidly cool the bumps of the die 20 .

在開口227露出第一冷卻管線242的區域中超過約70%的情況下，藉由第一冷卻管線242而提供的冷卻流體直接冷卻吸附板230的效果相對升高，但藉由第一冷卻管線242而提供的冷卻流體冷卻加熱塊220的效果會相對低下。即使藉由第一冷卻管線242而提供的冷卻流體直接冷卻吸附板230，加熱塊220的熱也會傳遞給吸附板230，因而難以急速冷卻晶元20的凸塊。另外，開口227的區域越增加，加熱塊220的區域越減小，因而加熱塊220的發熱量會減少。因此，難以急速熔化晶元20的凸塊。In the case where the opening 227 exposes more than about 70% of the area of the first cooling line 242, the cooling fluid provided by the first cooling line 242 directly cools the adsorption plate 230. The cooling fluid provided by 242 is less effective in cooling the heating block 220 . Even if the cooling fluid provided by the first cooling pipeline 242 directly cools the adsorption plate 230 , the heat of the heating block 220 will be transferred to the adsorption plate 230 , so it is difficult to rapidly cool the bumps of the die 20 . In addition, the larger the area of the opening 227 is, the smaller the area of the heating block 220 is, so the heat generation of the heating block 220 will decrease. Therefore, it is difficult to rapidly melt the bumps of the die 20 .

因此，開口227可以使第一冷卻管線242的區域中約30%至70%露出。Thus, the opening 227 may expose about 30% to 70% of the area of the first cooling line 242 .

第9圖是用於說明本發明另一實施例的加熱塊的開口的剖面圖，第10圖是用於說明第9圖所示的加熱塊的開口的俯視圖。Fig. 9 is a cross-sectional view illustrating an opening of a heating block according to another embodiment of the present invention, and Fig. 10 is a plan view illustrating an opening of the heating block shown in Fig. 9 .

如果參照第9圖及第10圖，加熱塊220具有使第一冷卻管線242部分地露出的開口228。例如，開口228可以是貫通上下的貫通孔。此時，藉由第一冷卻管線242提供的冷卻流體可以沿著第一冷卻管線242循環，或者藉由加熱塊220與吸附板230之間或加熱塊220與底座塊210的第二塊214之間而排出到外部。Referring to FIGS. 9 and 10 , the heating block 220 has an opening 228 partially exposing the first cooling line 242 . For example, the opening 228 may be a through hole penetrating up and down. At this time, the cooling fluid provided by the first cooling line 242 can circulate along the first cooling line 242, or pass between the heating block 220 and the adsorption plate 230 or between the heating block 220 and the second block 214 of the base block 210. and discharged to the outside.

開口228可以使第一冷卻管線242的區域中約30%至70%露出。The opening 228 may expose about 30% to 70% of the area of the first cooling line 242 .

第11圖是用於說明本發明又一實施例的加熱塊的開口的剖面圖。Fig. 11 is a sectional view illustrating an opening of a heating block according to still another embodiment of the present invention.

如果參照第11圖，加熱塊220具有使第一冷卻管線242部分地露出的開口228。例如，開口228可以是貫通上下的貫通孔。If referring to FIG. 11 , the heating block 220 has an opening 228 that partially exposes the first cooling line 242 . For example, the opening 228 may be a through hole penetrating up and down.

另外，可以還形成有與開口228連接的連接槽229。連接槽229可以配備於加熱塊220的上部面與吸附板230的下部面中至少一者。In addition, a connection groove 229 connected to the opening 228 may be further formed. The connection groove 229 may be provided on at least one of the upper surface of the heating block 220 and the lower surface of the adsorption plate 230 .

作為一個示例，連接槽229如第11圖所示，可以在加熱塊220的上部面形成。作為另一示例，連接槽229也可以在吸附板230的下部面形成。作為又一示例，連接槽229也可以分別在加熱塊220的上部面和吸附板230的下部面形成。As an example, the connecting groove 229 may be formed on the upper surface of the heating block 220 as shown in FIG. 11 . As another example, the connection groove 229 may also be formed on the lower surface of the adsorption plate 230 . As yet another example, the connection grooves 229 may also be formed on the upper surface of the heating block 220 and the lower surface of the adsorption plate 230 respectively.

藉由第一冷卻管線242而提供的冷卻流體可以藉由連接槽229而排出到外部。The cooling fluid supplied through the first cooling line 242 may be discharged to the outside through the connection groove 229 .

另一方面，雖然圖中未示出，連接槽229也可以以與開口228連接的方式，配備於加熱塊220的下部面和底座塊210的上部面中至少一者。On the other hand, although not shown in the figure, the connecting groove 229 may be provided on at least one of the lower surface of the heating block 220 and the upper surface of the base block 210 so as to be connected to the opening 228 .

焊接頭200可以還包括溫度感測器。該溫度感測器配備於加熱塊220的內部，感知加熱塊220的溫度。根據該溫度感測器的感知結果，可以控制提供給發熱體222的電源的開啟/關閉及冷卻管線240的冷卻流體的噴射、製冷劑溫度及循環。The welding head 200 may further include a temperature sensor. The temperature sensor is equipped inside the heating block 220 to sense the temperature of the heating block 220 . According to the sensing result of the temperature sensor, the power supply to the heating element 222 can be turned on/off, the injection of the cooling fluid in the cooling line 240 , the refrigerant temperature and circulation can be controlled.

另一方面，該溫度感測器也可以配備於吸附板230。On the other hand, the temperature sensor can also be equipped on the adsorption plate 230 .

焊接頭200移送晶元20，在使得貼緊該晶片10的狀態下，利用加熱塊220加熱晶元20，熔化晶元20的凸塊後，利用冷卻管線240使該晶元20冷卻，從而將晶元20焊接於該晶片。焊接頭200急速加熱、急速冷卻晶元20，因而在該晶片與晶元20之間可以形成品質優秀、形狀良好的焊料。The welding head 200 transfers the wafer 20, and in the state of being in close contact with the wafer 10, heats the wafer 20 with the heating block 220, and after melting the bumps of the wafer 20, cools the wafer 20 with the cooling pipeline 240, thereby Die 20 is bonded to the wafer. The bonding head 200 rapidly heats and rapidly cools the wafer 20 , so that solder with excellent quality and good shape can be formed between the wafer and the wafer 20 .

焊接頭200可以迅速執行該晶元20的加熱和冷卻，因而可以提高將晶元20焊接於該晶片的製程的效率性。The bonding head 200 can quickly perform heating and cooling of the die 20, thereby improving the efficiency of the process of bonding the die 20 to the wafer.

焊接裝置300利用卡盤結構物100固定晶片10，在加熱到既定溫度的狀態下，利用焊接頭200移送晶元20 ，使得貼緊晶片10後，利用焊接頭200加熱晶元20，使晶元20的凸塊熔化後，使晶元20冷卻，從而將晶元20焊接於晶片10。因此，在晶元20與晶片10之間可以形成品質優秀、形狀良好的焊料。另外，由於可以迅速執行晶元20的加熱和冷卻，因而可以提高利用焊接裝置300而將晶元20焊接於晶片10的製程的效率性。The welding device 300 uses the chuck structure 100 to fix the wafer 10, and when heated to a predetermined temperature, uses the welding head 200 to transfer the wafer 20, so that after the wafer 10 is attached, the welding head 200 is used to heat the wafer 20 to make the wafer After the bumps of 20 are melted, the die 20 is cooled, so that the die 20 is bonded to the wafer 10 . Therefore, solder with excellent quality and good shape can be formed between the die 20 and the wafer 10 . In addition, since the heating and cooling of the die 20 can be performed quickly, the efficiency of the process of bonding the die 20 to the wafer 10 using the bonding apparatus 300 can be improved.

焊接頭200可以移送晶元20並層疊於晶片10上。因此，焊接裝置300無需配備另外的晶元移送裝置，因而可以簡化焊接裝置300的結構。The bonding head 200 can transfer the die 20 and stack it on the wafer 10 . Therefore, the welding device 300 does not need to be equipped with an additional wafer transfer device, thus simplifying the structure of the welding device 300 .

工業實用性Industrial Applicability

綜上所述，本發明的卡盤板、具有該卡盤板的卡盤結構物及具有卡盤結構物的焊接裝置可以利用吸附晶片所需的真空力而使加熱盤與卡盤板貼緊。只解除該真空力，便可分離該加熱盤和該卡盤板，並進行修理或更換，因此，可以迅速地執行對該卡盤結構物的維護。In summary, the chuck plate, the chuck structure having the chuck plate, and the welding device having the chuck structure of the present invention can make the heating plate and the chuck plate adhere to each other by utilizing the vacuum force required for absorbing the wafer. . Only by releasing the vacuum force, the heating plate and the chuck plate can be separated and repaired or replaced, so maintenance of the chuck structure can be performed promptly.

以上參照本發明較佳實施例進行了說明，但所屬技術領域的具有通常知識者可以理解，在不超出以下申請專利範圍記載的本發明的思想及領域的範圍內，可以多樣地修訂及變更本發明。The above has been described with reference to the preferred embodiments of the present invention, but those with ordinary knowledge in the technical field can understand that within the scope of the ideas and fields of the present invention described in the scope of claims below, the present invention can be amended and changed variously. invention.

100‧‧‧卡盤結構物110‧‧‧加熱盤112、222‧‧‧發熱體114‧‧‧第一真空管線115‧‧‧第二真空管線116‧‧‧定位銷118、126、225‧‧‧槽120‧‧‧卡盤板122‧‧‧第三真空管線122a、123‧‧‧真空槽122b、232‧‧‧真空孔124‧‧‧容納槽130‧‧‧引導環132、144‧‧‧掛接棱140‧‧‧夾具142‧‧‧連結螺絲150‧‧‧電源電纜160‧‧‧溫度感測器200‧‧‧焊接頭210‧‧‧底座塊212‧‧‧第一塊214‧‧‧第二塊216‧‧‧第三塊220‧‧‧加熱塊224‧‧‧第四真空管線226‧‧‧第五真空管線227、228‧‧‧開口229‧‧‧連接槽230‧‧‧吸附板240‧‧‧冷卻管線242‧‧‧第一冷卻管線244‧‧‧第二冷卻管線300‧‧‧焊接裝置10‧‧‧晶片20‧‧‧晶元100‧‧‧Chuck structure 110‧‧‧Heating plate 112, 222‧‧‧Heater 114‧‧‧First vacuum line 115‧‧‧Second vacuum line 116‧‧‧Location pins 118, 126, 225‧ ‧‧Slot 120‧‧‧Chuck plate 122‧‧‧Third vacuum lines 122a, 123‧‧‧Vacuum grooves 122b, 232‧‧‧Vacuum hole 124‧‧‧Accommodating groove 130‧‧‧Guide rings 132, 144‧ ‧‧Mounting edge 140‧‧‧Clamp 142‧‧‧Connecting screw 150‧‧‧Power cable 160‧‧‧Temperature sensor 200‧‧‧Welding head 210‧‧‧Base block 212‧‧‧First block 214 ‧‧‧Second Block 216‧‧‧Third Block 220‧‧‧Heating Block 224‧‧‧Fourth Vacuum Line 226‧‧‧Fifth Vacuum Line 227, 228‧‧‧Opening 229‧‧‧Connection Groove 230‧ ‧‧Adsorption plate 240‧‧‧Cooling pipeline 242‧‧‧First cooling pipeline 244‧‧‧Second cooling pipeline 300‧‧‧Soldering device 10‧‧‧chip 20‧‧‧wafer

第1圖是用於說明本發明一個實施例的卡盤結構物的剖面圖。Fig. 1 is a sectional view of a chuck structure illustrating an embodiment of the present invention.

第2圖是第1圖所示的卡盤結構物的俯視圖。Fig. 2 is a plan view of the chuck structure shown in Fig. 1 .

第3圖是用於說明第1圖所示的卡盤板的俯視圖。Fig. 3 is a plan view for explaining the chuck plate shown in Fig. 1 .

第4圖是用於說明第1圖所示的卡盤板的仰視圖。Fig. 4 is a bottom view for explaining the chuck plate shown in Fig. 1 .

第5圖是放大第1圖所示的A部分的放大剖面圖。Fig. 5 is an enlarged cross-sectional view of part A shown in Fig. 1 .

第6圖是用於說明本發明一個實施例的焊接裝置的概略剖面圖。Fig. 6 is a schematic sectional view illustrating a welding device according to an embodiment of the present invention.

第7圖是用於說明第6圖所示的焊接頭的概略剖面圖。Fig. 7 is a schematic sectional view for explaining the welding head shown in Fig. 6 .

第8圖是用於說明第7圖所示的焊接頭中加熱塊的開口的俯視圖。Fig. 8 is a plan view for explaining the opening of the heating block in the welding head shown in Fig. 7 .

第9圖是用於說明本發明另一實施例的加熱塊的開口的剖面圖。第10圖是用於說明第9圖所示的加熱塊的開口的俯視圖。Fig. 9 is a cross-sectional view illustrating an opening of a heating block according to another embodiment of the present invention. Fig. 10 is a plan view for explaining the opening of the heating block shown in Fig. 9 .

第11圖是用於說明本發明又一實施例的加熱塊的開口的剖面圖。Fig. 11 is a sectional view illustrating an opening of a heating block according to still another embodiment of the present invention.

100‧‧‧卡盤結構物 100‧‧‧Chuck structure

110‧‧‧加熱盤 110‧‧‧Heating plate

112‧‧‧發熱體 112‧‧‧heating body

114‧‧‧第一真空管線 114‧‧‧The first vacuum pipeline

115‧‧‧第二真空管線 115‧‧‧Second vacuum line

116‧‧‧定位銷 116‧‧‧locating pin

120‧‧‧卡盤板 120‧‧‧Chuck plate

122‧‧‧第三真空管線 122‧‧‧The third vacuum pipeline

123‧‧‧真空槽 123‧‧‧vacuum tank

130‧‧‧引導環 130‧‧‧guiding ring

140‧‧‧夾具 140‧‧‧fixture

142‧‧‧連結螺絲 142‧‧‧Connecting screw

150‧‧‧電源電纜 150‧‧‧power cable

160‧‧‧溫度感測器 160‧‧‧temperature sensor

10‧‧‧晶片 10‧‧‧chip

Claims (14)

一種卡盤板，其中，放置於一加熱盤上，在上面支撐一晶片，將該加熱盤中發生的熱傳遞給該晶片，以便加熱該晶片，該卡盤板具備貫通上下的一真空管線及一真空槽，該真空管線利用真空力吸附該晶片，該真空槽為了真空吸附於該加熱盤而配備於下部面，被該加熱盤的上部面限定而形成空間。 A chuck plate, wherein, placed on a heating plate, supports a wafer on it, and transfers heat generated in the heating plate to the wafer, so as to heat the wafer, the chuck plate is provided with a vacuum line penetrating up and down and A vacuum groove, the vacuum line uses vacuum force to absorb the wafer, the vacuum groove is equipped on the lower surface for vacuum adsorption on the heating plate, and is defined by the upper surface of the heating plate to form a space. 如申請專利範圍第1項所述的卡盤板，其中，該卡盤板由在氧化鋁中添加了鈦的材質構成，以便該卡盤板具有低於氮化鋁導熱率的導熱率。 The chuck plate according to claim 1, wherein the chuck plate is made of a material in which titanium is added to alumina, so that the chuck plate has a thermal conductivity lower than that of aluminum nitride. 如申請專利範圍第2項所述的卡盤板，其中，在該卡盤板中，相對於該氧化鋁100重量份，該鈦添加10至20重量份。 The chuck plate according to claim 2 of the patent application, wherein, in the chuck plate, 10 to 20 parts by weight of the titanium is added to 100 parts by weight of the alumina. 如申請專利範圍第2項所述的卡盤板，其中，該卡盤板的導熱率為5至20W/m‧k。 The chuck plate as described in item 2 of the patent application, wherein the thermal conductivity of the chuck plate is 5 to 20 W/m‧k. 如申請專利範圍第1項所述的卡盤板，其中，為了該晶片在該卡盤板的邊緣也貼緊，位於該卡盤板的最外側的該真空管線的真空孔的間隔，配置得比位於與該最外側相比更內側的該真空管線的真空孔的間隔窄。 The chuck plate as described in item 1 of the scope of the patent application, wherein, for the wafer to be tightly attached to the edge of the chuck plate, the interval between the vacuum holes of the vacuum line located at the outermost side of the chuck plate is configured as follows: The space between the vacuum holes of the vacuum line located on the inner side of the outermost side is narrower. 一種卡盤結構物，其中，包括：一加熱盤，其內置藉助於從外部接入的電源而發熱的一發熱體，具有為了提供真空力而延長至上部面的一第一真空管線及一第二真空管線；以及 一卡盤板，其放置於該加熱盤上，在上面支撐一晶片，將該加熱盤中發生的熱傳遞給該晶片，以便加熱該晶片，為了利用該真空力吸附該晶片，具備與該第一真空管線連接的一第三真空管線及一真空槽，該真空槽為了真空吸附於該加熱盤而以與該第二真空管線連接的方式配備於下部面，被該加熱盤的上部面限定而形成空間。 A chuck structure, which includes: a heating plate, which has a built-in heating element that generates heat by means of a power source connected from the outside, and has a first vacuum line and a first vacuum line extended to the upper surface for providing vacuum force. two vacuum lines; and a chuck plate, which is placed on the heating plate, supports a wafer thereon, transfers the heat generated in the heating plate to the wafer so as to heat the wafer, and is equipped with the first a vacuum line connected to a third vacuum line and a vacuum groove provided on the lower face in connection with the second vacuum line for vacuum adsorption to the heating plate, defined by the upper face of the heating plate form space. 如申請專利範圍第6項所述的卡盤結構物，其中，該第三真空管線包括：一真空槽，其以與該第一真空管線連接的方式配備於該卡盤板的下部面，被該卡盤板的下部面與該加熱盤的上部面限定而形成空間；以及複數個真空孔，其貫通該卡盤板，從形成有該真空槽的下部面延長至該卡盤板的上部面。 The chuck structure as described in item 6 of the scope of the patent application, wherein the third vacuum line includes: a vacuum groove, which is equipped on the lower surface of the chuck plate in a manner connected with the first vacuum line, and is The lower surface of the chuck plate is defined by the upper surface of the heating plate to form a space; and a plurality of vacuum holes pass through the chuck plate and extend from the lower surface where the vacuum groove is formed to the upper surface of the chuck plate . 如申請專利範圍第6項所述的卡盤結構物，其中，該第一真空管線包括：一真空槽，其以與該第三真空管線連接的方式配備於該加熱盤上部面，被該卡盤板的下部面和該加熱盤的上部面限定而形成空間；以及複數個真空孔，其貫通該加熱盤而從下部面延長至形成有該真空槽的上部面。 The chuck structure as described in item 6 of the scope of the patent application, wherein the first vacuum pipeline includes: a vacuum groove, which is connected to the third vacuum pipeline and is equipped on the upper surface of the heating plate, and is used by the chuck A space is defined by the lower surface of the disc plate and the upper surface of the heating plate; and a plurality of vacuum holes penetrate the heating plate and extend from the lower surface to the upper surface where the vacuum groove is formed. 如申請專利範圍第6項所述的卡盤結構物，其中，在該加熱盤的上部面和該卡盤板的下部面中某一面具備一定位銷，在剩餘一面具備用於容納該定位銷並對該加熱盤和該卡盤板進行排列的一容納槽。 The chuck structure as described in item 6 of the scope of the patent application, wherein a positioning pin is provided on one of the upper surface of the heating plate and the lower surface of the chuck plate, and a positioning pin for accommodating the positioning pin is provided on the remaining surface. And a receiving groove for arranging the heating plate and the chuck plate. 如申請專利範圍第6項所述的卡盤結構物，其中，還包括：一引導環，其掛接於沿著該加熱盤的上面邊緣形成的一槽，引導該加熱盤的外周；以及一夾具，其以覆蓋該卡盤板的上部面邊緣的狀態固定於該引導環，使該卡盤板貼緊於該加熱盤進行固定。 The chuck structure as described in item 6 of the scope of the patent application, which further includes: a guide ring, which is hooked on a groove formed along the upper edge of the heating plate, and guides the outer periphery of the heating plate; and a A jig is fixed to the guide ring in a state covering the edge of the upper surface of the chuck plate, and fixes the chuck plate in close contact with the heating plate. 如申請專利範圍第10項所述的卡盤結構物，其中，該夾具放置於沿著該卡盤板的上面邊緣形成的槽，以便該夾具的上面與該卡盤板的上面位於相同的高度。 The chuck structure according to claim 10, wherein the jig is placed in a groove formed along the upper edge of the chuck plate so that the upper face of the jig is at the same height as the upper face of the chuck plate . 如申請專利範圍第10項所述的卡盤結構物，其中，為了防止藉由該加熱盤及該卡盤板側面的熱損失，該引導環及該夾具以導熱率比該卡盤板低的材質構成。 The chuck structure described in claim 10 of the patent application, wherein, in order to prevent heat loss through the heating plate and the side of the chuck plate, the guide ring and the jig have a lower thermal conductivity than the chuck plate Material composition. 一種焊接裝置，其中，其由一卡盤結構物及一焊接頭構成，該卡盤結構物包括：一加熱盤，其內置藉助於從外部接入的電源而發熱的一發熱體，具有為了提供真空力而延長至上部面的一第一真空管線及一第二真空管線；以及一卡盤板，其放置於該加熱盤上，在上面支撐一晶片，將該加熱盤中發生的熱傳遞給該晶片，以便加熱該晶片，為了利用該真空力吸附該晶片，具備與該第一真空管線連接的一第三真空管線及一真空槽，該真空槽為了真空吸附於該加熱盤而以與該第二真空管線連接的方式配備於下部面，被該加熱盤的上部面限定而形成空間，該焊接頭配備於該卡盤結構物上，固定及加熱一晶元，焊接於該晶片。 A welding device, wherein it is composed of a chuck structure and a welding head, the chuck structure includes: a heating plate, which is built with a heating element that generates heat by means of an external power supply, and has a function to provide a first vacuum line and a second vacuum line extended to the upper surface by vacuum force; and a chuck plate, which is placed on the heating plate, supports a wafer thereon, and transfers the heat generated in the heating plate to the The wafer, in order to heat the wafer, is provided with a third vacuum line connected to the first vacuum line and a vacuum groove in order to absorb the wafer by the vacuum force, and the vacuum groove is connected to the heating plate for vacuum adsorption. The second vacuum pipeline is connected to the lower surface, which is defined by the upper surface of the heating plate to form a space. The welding head is equipped on the chuck structure, fixes and heats a wafer, and solders to the wafer. 如申請專利範圍第13項所述的焊接裝置，其中，該焊接頭 包括：一底座塊；一加熱塊，其配備於該底座塊上，內置用於藉助於從外部接入的電源而發熱並加熱該晶元的一發熱體，為了提供真空力而具有延長至上部面的一第四真空管線及一第五真空管線；以及一吸附板，其藉助於該第四真空管線的真空力而固定於該加熱塊上，為了利用真空力固定該晶元而具有與該第五真空管線連接的真空孔。 The welding device as described in item 13 of the scope of the patent application, wherein the welding head Including: a base block; a heating block, which is equipped on the base block, and has a built-in heating element for heating and heating the wafer by means of a power supply connected from the outside, and has an extension to the upper part in order to provide vacuum force A fourth vacuum line and a fifth vacuum line on the surface; and an adsorption plate, which is fixed on the heating block by means of the vacuum force of the fourth vacuum line, in order to use the vacuum force to fix the wafer and has the same The vacuum hole to which the fifth vacuum line is connected.
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