TWI760499B - A bonding apparatus having a bonding head and a bonding head - Google Patents

A bonding apparatus having a bonding head and a bonding head Download PDF

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TWI760499B
TWI760499B TW107118327A TW107118327A TWI760499B TW I760499 B TWI760499 B TW I760499B TW 107118327 A TW107118327 A TW 107118327A TW 107118327 A TW107118327 A TW 107118327A TW I760499 B TWI760499 B TW I760499B
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block
heating
vacuum
wafer
plate
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TW201906062A (en
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南成龍
金敏基
鄭仁榮
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南韓商美科陶瓷科技有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/742—Apparatus for manufacturing bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors

Abstract

焊接裝置的焊接頭包括：底座塊；加熱塊，其配備於該底座塊上，內置用於藉助於從外部接入的電源而發熱並加熱晶元的凸塊的發熱體，為了提供真空力而具有延長至上部面的第一真空管線及第二真空管線；吸附板，其藉助於該第一真空管線的真空力而固定於該加熱塊上，為了以真空力固定晶元而具有與該第二真空管線連接的真空孔；及冷卻管線，其從該底座塊的內部延長至該底座塊的上部面，用於向該加熱塊提供冷卻流體而使該晶元的凸塊冷卻，從而形成焊料。該加熱塊為了追加冷卻該晶元的凸塊而可以具有使該冷卻管線部分地露出的開口，以便該冷卻管線的冷卻流體也提供給該吸附板。The welding head of the welding device includes: a base block; a heating block, which is equipped on the base block and has a built-in heat generating body for generating heat and heating the bumps of the wafer by means of a power supplied from the outside, and is used to provide a vacuum force. There is a first vacuum line and a second vacuum line extending to the upper surface; an adsorption plate, which is fixed on the heating block by means of the vacuum force of the first vacuum line, has and the first vacuum force for fixing the wafer. A vacuum hole to which two vacuum lines are connected; and a cooling line extending from the interior of the base block to the upper face of the base block for supplying cooling fluid to the heating block to cool the bumps of the die to form solder . The heating block may have an opening that partially exposes the cooling line in order to additionally cool the bump of the wafer, so that the cooling fluid of the cooling line is also supplied to the adsorption plate.

Description

焊接頭及具有其的焊接裝置Welding head and welding device having the same

本發明涉及焊接頭及具有其的焊接裝置，更詳細而言，涉及一種用於將晶元焊接於晶片上的焊接頭及具有其的焊接裝置。The present invention relates to a bonding head and a bonding device having the same, and more particularly, to a bonding head for bonding a wafer to a wafer and a bonding device having the same.

最近，為了應對半導體封裝等電子部件的小型化要求，開發了層疊多個電子部件而形成層疊晶元封裝的技術。Recently, in order to meet the demand for miniaturization of electronic components such as semiconductor packages, a technology of stacking a plurality of electronic components to form a stacked die package has been developed.

該層疊晶元封裝作為在封裝基板上層疊有晶元的半導體封裝，可以實現高集成化。該層疊晶元封裝在晶元級（chip level）或晶片級（wafer level）上進行製造。The stacked die package can achieve high integration as a semiconductor package in which a die is stacked on a package substrate. The stacked die package is fabricated at the chip level or wafer level.

為了在該晶元級或晶片級上製造層疊晶元封裝，執行對晶元與晶元或晶片與晶片或晶元與晶片施加熱和壓力並焊接所需的作業，將執行這種作業的裝置稱為焊接裝置。該焊接裝置在晶片上層疊晶元，利用焊接頭對該晶片和晶元進行熱壓焊接。In order to manufacture a stacked die package at the die or wafer level, the operations required to apply heat and pressure to die and die or die to die or die to die and bond are performed, the apparatus that will perform such operations called a welding device. The bonding device stacks wafers on a wafer, and performs thermocompression bonding on the wafers and wafers by using a bonding head.

但是，該焊接頭只執行單純焊接層疊的晶片與晶元的作業，因而要求用於使該晶元層疊於該晶片上的另外的晶元移送裝置。因此，該焊接裝置的結構會變得複雜。However, this bonding head only performs the operation of simply bonding the stacked wafers and wafers, and thus requires a separate wafer transfer device for stacking the wafers on the wafers. Therefore, the structure of the welding device becomes complicated.

本發明提供一種能夠移送晶元並在層疊於晶片後焊接該晶元與該晶片的焊接頭。The present invention provides a bonding head capable of transferring a wafer and bonding the wafer and the wafer after being stacked on the wafer.

本發明提供具有該焊接頭的焊接裝置。The present invention provides a welding device having the welding head.

本發明的焊接頭包括：底座塊；加熱塊，其配備於該底座塊上，內置用於藉助於從外部接入的電源而發熱並加熱晶元的凸塊的發熱體，為了提供真空力而具有延長至上部面的第一真空管線及第二真空管線；吸附板，其藉助於該第一真空管線的真空力而固定於該加熱塊上，為了以真空力固定晶元而具有與該第二真空管線連接的真空孔；及冷卻管線，其從該底座塊的內部延長至該底座塊的上部面，用於向該加熱塊提供冷卻流體而使該晶元的凸塊冷卻，從而形成焊料，該加熱塊為了追加冷卻該晶元的凸塊而可以具有使該冷卻管線部分地露出的開口，以便該冷卻管線的冷卻流體也提供給該吸附板。The welding head of the present invention includes: a base block; a heating block, which is equipped on the base block and has a built-in heat generating body for generating heat by means of an externally connected power supply and heating the bump of the wafer, and is used to provide a vacuum force. There is a first vacuum line and a second vacuum line extending to the upper surface; an adsorption plate, which is fixed on the heating block by means of the vacuum force of the first vacuum line, has and the first vacuum force for fixing the wafer. A vacuum hole to which two vacuum lines are connected; and a cooling line extending from the interior of the base block to the upper face of the base block for supplying cooling fluid to the heating block to cool the bumps of the die to form solder , the heating block may have an opening that partially exposes the cooling line in order to additionally cool the bump of the wafer, so that the cooling fluid of the cooling line is also supplied to the adsorption plate.

根據本發明的一個實施例，該開口可以露出該冷卻管線的區域中的30%至70%。According to an embodiment of the invention, the opening may expose 30% to 70% of the area of the cooling line.

根據本發明的一個實施例，該開口可以是從該加熱塊的內側延長至側面的槽。According to one embodiment of the present invention, the opening may be a slot extending from the inside to the side of the heating block.

根據本發明的一個實施例，該開口可以是貫通該加熱塊的上下的貫通孔。According to an embodiment of the present invention, the opening may be a through hole penetrating the upper and lower sides of the heating block.

根據本發明的一個實施例，該焊接頭可以還包括連接槽，其以與該貫通孔連接的方式，形成在該加熱塊的上部面和該吸附板的下部面中至少一者上，用於將藉由該冷卻管線供應的冷卻流體藉由該加熱塊與該吸附板之間排出到外部。According to an embodiment of the present invention, the welding head may further include a connection groove, which is formed on at least one of the upper surface of the heating block and the lower surface of the adsorption plate in a manner of being connected with the through hole, for The cooling fluid supplied through the cooling line is discharged to the outside through between the heating block and the adsorption plate.

根據本發明的一個實施例，隨著該吸附板的毀損或該晶元大小的變更，該吸附板能夠更換。According to an embodiment of the present invention, as the adsorption plate is damaged or the size of the die is changed, the adsorption plate can be replaced.

根據本發明的一個實施例，該底座塊可以包括：第一塊，其由金屬材質構成；及第二塊，其配備於該第一塊上，為了減少加熱塊中發生的熱傳遞到該第一塊，以具有低於該加熱塊的導熱性的陶瓷材質構成。According to an embodiment of the present invention, the base block may include: a first block, which is made of a metal material; and a second block, which is equipped on the first block, in order to reduce the heat transfer generated in the heating block to the first block One piece is made of ceramic material with thermal conductivity lower than that of the heating block.

根據本發明的一個實施例，該底座塊可以還包括第三塊，其配備於該第一塊與該第二塊之間，為了減少該第二塊的熱傳遞到該第一塊而以陶瓷材質構成。According to an embodiment of the present invention, the base block may further include a third block, which is provided between the first block and the second block. In order to reduce the heat transfer of the second block to the first block, ceramic Material composition.

根據本發明的一個實施例，該焊接頭可以還包括溫度感測器，其配備於該加熱塊的內部，用於感知該加熱塊的溫度。According to an embodiment of the present invention, the welding head may further include a temperature sensor, which is provided inside the heating block and is used for sensing the temperature of the heating block.

本發明的焊接裝置可以由支撐晶片的卡盤結構物及焊接頭構成，其中，該焊接頭包括：底座塊；加熱塊，其配備於該底座塊上，內置用於藉助於從外部接入的電源而發熱並加熱晶元的凸塊的發熱體，為了提供真空力而具有延長至上部面的第一真空管線及第二真空管線；吸附板，其藉助於該第一真空管線的真空力而固定於該加熱塊上，為了以真空力固定晶元而具有與該第二真空管線連接的真空孔；及冷卻管線，其從該底座塊的內部延長至該底座塊的上部面，用於向該加熱塊提供冷卻流體而使該晶元的凸塊冷卻，從而形成焊料，且配備得能夠在該卡盤結構物的上方移動，使得該吸附板朝向下方，並將該晶元焊接於該晶片；該加熱塊為了追加冷卻該晶元的凸塊而可以具有使該冷卻管線部分地露出的開口，以便該冷卻管線的冷卻流體也提供給該吸附板。The welding device of the present invention may be composed of a chuck structure supporting a wafer and a welding head, wherein the welding head includes: a base block; The heat generating body, which generates heat from the power supply and heats the bumps of the wafer, has a first vacuum line and a second vacuum line extended to the upper surface in order to provide a vacuum force; an adsorption plate is heated by the vacuum force of the first vacuum line. is fixed on the heating block and has a vacuum hole connected to the second vacuum line in order to fix the wafer by vacuum force; and a cooling line extending from the interior of the base block to the upper surface of the base block for feeding The heating block provides cooling fluid to cool the bumps of the die to form solder, and is configured to move over the chuck structure so that the suction plate faces downwards and solder the die to the wafer ; The heating block may have an opening which partially exposes the cooling line in order to additionally cool the bump of the wafer, so that the cooling fluid of the cooling line is also supplied to the adsorption plate.

根據本發明的一個實施例，該卡盤結構物可以包括：加熱盤，其內置藉助於從外部接入的電源而發熱的發熱體，具有為了提供真空力而延長至上部面的第三真空管線及第四真空管線；及卡盤板，其放於該加熱盤上，在上面支撐晶片，將該加熱盤中發生的熱傳遞給該晶片，以便加熱該晶片，為了利用該真空力吸附該晶片，具備與該第三真空管線連接的第五真空管線及真空槽，該真空槽為了真空吸附於該加熱盤而以與該第四真空管線連接的方式配備於下部面，被該加熱盤的上部面限定而形成空間。According to one embodiment of the present invention, the chuck structure may include: a heating plate having a built-in heat generating body that generates heat by means of a power source supplied from the outside, and having a third vacuum line extended to the upper surface in order to provide a vacuum force and a fourth vacuum line; and a chuck plate, which is placed on the heating plate, supports the wafer thereon, and transfers the heat generated in the heating plate to the wafer so as to heat the wafer, in order to utilize the vacuum force to attract the wafer , is provided with a fifth vacuum line connected to the third vacuum line and a vacuum chamber, the vacuum chamber is arranged on the lower surface so as to be connected to the fourth vacuum line for vacuum adsorption to the heating plate, and is supported by the upper part of the heating plate The surface is limited to form a space.

根據本發明的一個實施例，在該卡盤結構物中，在該加熱盤的上部面和該卡盤板的下部面中某一面可以具備定位銷，在剩餘一面具備用於容納該定位銷並對該加熱盤和該卡盤板進行排列的容納槽。According to an embodiment of the present invention, in the chuck structure, one of the upper surface of the heating plate and the lower surface of the chuck plate may be provided with positioning pins, and the remaining surface may be provided with positioning pins for accommodating the positioning pins and A receiving groove for arranging the heating plate and the chuck plate.

根據本發明的一個實施例，該卡盤結構物可以還包括：引導環，其掛接於沿著該加熱盤的上面邊緣形成的槽，引導該加熱盤的外周；及夾具，其以覆蓋該卡盤板的上部面邊緣的狀態固定於該引導環，使該卡盤板貼緊於該加熱盤進行固定。According to an embodiment of the present invention, the chuck structure may further include: a guide ring hooked to a groove formed along an upper edge of the heating plate to guide the outer circumference of the heating plate; and a clamp to cover the heating plate The state of the edge of the upper surface of the chuck plate is fixed to the guide ring, so that the chuck plate is fixed in close contact with the heating plate.

根據本發明的一個實施例，該夾具可以放置於沿著該卡盤板的上面邊緣形成的槽，以便該夾具的上面與該卡盤板的上面位於相同的高度。According to one embodiment of the present invention, the clamp may be placed in a groove formed along the upper edge of the chuck plate so that the upper surface of the clamp is at the same height as the upper surface of the chuck plate.

根據本發明的一個實施例，為了防止藉由該加熱盤及該卡盤板側面的熱損失，該引導環及該夾具可以以導熱率比該加熱盤及該卡盤板低的材質構成。According to an embodiment of the present invention, in order to prevent heat loss through the side surface of the heating plate and the chuck plate, the guide ring and the clamp can be made of materials with lower thermal conductivity than the heating plate and the chuck plate.

本發明的焊接頭利用真空力固定吸附板，因而藉由提供或解除該真空力，從而可以容易地更換該吸附板。因此，該焊接頭在該吸附板毀損或固定於該吸附板的晶元的大小變更時，可以只更換該吸附板加以應對。The welding head of the present invention uses the vacuum force to fix the suction plate, so that the suction plate can be easily replaced by applying or releasing the vacuum force. Therefore, when the suction plate is damaged or the size of the wafer fixed to the suction plate is changed, the welding head can only replace the suction plate to deal with it.

另外，該焊接頭在使該晶元貼緊晶片的狀態下加熱該晶元，使凸塊熔化後再次冷卻，從而將該晶元焊接於該晶片。特別是該焊接頭在加熱塊中形成使延長至底座塊上部面的冷卻管線部分地露出的開口，從而該冷卻管線的冷卻流體藉由該開口也可以直接提供給該吸附板。因此，可以更迅速地冷卻該晶元的凸塊。該焊接頭急速加熱、冷卻該晶元，因而可以在該晶片與該晶元之間形成品質優秀、形狀良好的焊料。因此，可以穩定地焊接該晶片與該晶元。In addition, the bonding head heats the wafer in a state where the wafer is in close contact with the wafer, melts the bumps and then cools down again, thereby bonding the wafer to the wafer. In particular, the welding head forms an opening in the heating block that partially exposes the cooling line extending to the upper surface of the base block, so that the cooling fluid of the cooling line can also be supplied directly to the suction plate through the opening. Therefore, the bumps of the wafer can be cooled more rapidly. The solder joint rapidly heats and cools the wafer, so that a solder of good quality and good shape can be formed between the wafer and the wafer. Therefore, the wafer and the die can be stably bonded.

而且，該焊接頭能夠迅速執行該晶元的加熱和冷卻，因而能夠提高將該晶元焊接於該晶片的工序的效率性。Furthermore, the bonding head can rapidly perform heating and cooling of the wafer, thereby improving the efficiency of the process of bonding the wafer to the wafer.

下面參照圖式，對本發明實施例的焊接頭及具有其的焊接裝置進行詳細說明。本發明可以施加多樣的變更，可以具有多種形態，在圖式中例示性圖示特定實施例，在正文中詳細說明。但是，這並非要將本發明限定於特定的揭露形態，應理解為包括本發明的思想及技術範圍內包含的所有變更、等同物以及替代物。在說明各圖的同時，針對類似的構成要素，使用了類似的元件符號。在圖式中，為了有助於本發明的明確性，結構物的尺寸比實際放大而進行圖示。The welding head and the welding device having the welding head according to the embodiment of the present invention will be described in detail below with reference to the drawings. The present invention can be variously modified and can have various forms, and specific embodiments are illustrated in the drawings and described in detail in the text. However, this is not intended to limit the present invention to a specific disclosed form, and it should be understood that all changes, equivalents, and substitutes included within the spirit and technical scope of the present invention are included. In describing each figure, similar reference numerals are used for similar components. In the drawings, in order to contribute to the clarity of the present invention, the dimensions of the structures are shown larger than actual ones.

第一、第二等術語可以用於說明多樣的構成要素，但該構成要素不得由該術語所限定。該術語只用於將一個構成要素區別於其他構成要素的目的。例如，在不超出本發明的申請專利範圍的同時，第一構成要素可以命名為第二構成要素，類似地，第二構成要素也可以命名為第一構成要素。Terms such as first, second, etc. can be used to describe various constituent elements, but the constituent elements shall not be limited by the terms. This term is used only for the purpose of distinguishing one constituent element from the other constituent elements. For example, the first constituent element can be named as the second constituent element, and similarly, the second constituent element can also be named as the first constituent element without exceeding the scope of the patent application of the present invention.

本申請中使用的術語只是為了說明特定的實施例而使用的，並非要限定本發明之意。只要在文理上未明確表示不同，單數的表現包括複數的表現。在本申請中，「包括」或「具有」等術語應理解為要指定說明書中記載的特徵、數字、步驟、動作、構成要素、部件或他們的組合的存在，並不預先排除一個或其以上的其他特徵或數字、步驟、動作、構成要素、部件或他們組合的存在或附加可能性。The terms used in this application are only used to describe specific embodiments, and are not intended to limit the present invention. The expression of the singular includes the expression of the plural, as long as the difference is not clearly expressed in the literature. In this application, terms such as "comprising" or "having" should be understood as specifying the existence of features, numbers, steps, actions, constituent elements, parts or their combinations described in the specification, and do not preclude one or more of them the existence or additional possibility of other features or numbers, steps, acts, constituent elements, parts or their combinations.

只要未不同地定義，包括技術性或科學性術語在內，在此使用的所有術語具有與本發明所屬技術領域的具有通常知識者一般理解的內容相同的意義。與一般使用的字典中定義的內容相同的術語，應解釋為與相關技術的文理上具有的意義一致的意義，只要在本申請中未明確定義，不得解釋為理想性地，過於形式上的意義。Unless defined differently, all terms including technical or scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms that are the same as those defined in commonly used dictionaries should be interpreted as meanings that are consistent with the meanings of related art in terms of literature and science. As long as they are not clearly defined in this application, they should not be interpreted as ideally, too formal meanings .

第1圖是用於說明本發明一個實施例的焊接頭的剖面圖，第2圖是用於說明第1圖所示的焊接頭中加熱塊的開口的俯視圖。FIG. 1 is a cross-sectional view illustrating a welding head according to an embodiment of the present invention, and FIG. 2 is a plan view illustrating an opening of a heating block in the welding head shown in FIG. 1 .

如果參照第1圖及第2圖，焊接頭100用於將晶元10移送到晶片（圖上未示出），焊接於該晶片，包括底座塊110、加熱塊120及吸附板130。雖然圖中未示出，焊接頭100為了移送晶元10而可以配備得能夠進行水平移動、上下移動、旋轉、翻轉等。Referring to FIG. 1 and FIG. 2 , the bonding head 100 is used for transferring the wafer 10 to a wafer (not shown in the figure), and bonding to the wafer, including the base block 110 , the heating block 120 and the suction plate 130 . Although not shown in the drawings, the bonding head 100 may be equipped to be capable of horizontal movement, vertical movement, rotation, inversion, and the like in order to transfer the wafer 10 .

底座塊110包括第一塊112及第二塊114。The base block 110 includes a first block 112 and a second block 114 .

第一塊112由金屬材質構成。作為該金屬材質的示例，可以為不鏽鋼材質。The first block 112 is made of metal material. As an example of the metal material, stainless steel may be used.

第二塊114配備於第一塊112上。第二塊114可以由具有比加熱塊120低的導熱性的陶瓷材質構成。作為該陶瓷材質的示例，可以為氧化鋁（Al2O3）。由於第二塊114的導熱性比加熱塊120的導熱性低，因而第二塊114可以減少加熱塊120中發生的熱傳遞到第一塊112。The second block 114 is provided on the first block 112 . The second block 114 may be composed of a ceramic material having a lower thermal conductivity than the heating block 120 . As an example of the ceramic material, alumina (Al2O3) may be used. Since the thermal conductivity of the second block 114 is lower than that of the heating block 120 , the second block 114 may reduce the transfer of heat that occurs in the heating block 120 to the first block 112 .

另外，底座塊110還包括第三塊116。Additionally, the base block 110 also includes a third block 116 .

第三塊116配備於第一塊112與第二塊114之間。第三塊116發揮緩衝塊作用，減少第二塊114的熱向第一塊112傳遞。第三塊116可以由陶瓷材質構成，作為該陶瓷材質的示例，可以為氧化鋁。The third block 116 is provided between the first block 112 and the second block 114 . The third block 116 acts as a buffer block to reduce the transfer of heat from the second block 114 to the first block 112 . The third block 116 may be made of a ceramic material, and an example of the ceramic material may be alumina.

加熱塊120配備於底座塊110，具體而言，配備於第二塊114上。加熱塊120內置發熱體122。發熱體122可以由金屬材質構成。發熱體122藉助於從外部接入的電源而發熱，利用該熱，對吸附於吸附板130的晶元10進行加熱。可以利用該熱，熔化晶元10的凸塊。例如，為了熔化晶元10的凸塊，發熱體122可以將晶元10瞬間加熱至約450℃。The heating block 120 is provided on the base block 110 , specifically, on the second block 114 . The heating block 120 has a built-in heating element 122 . The heating body 122 may be formed of a metal material. The heat generating body 122 generates heat by the power supplied from the outside, and the wafer 10 adsorbed to the adsorption plate 130 is heated by the heat. The heat can be used to melt the bumps of the wafer 10 . For example, in order to melt the bumps of the wafer 10, the heating element 122 may instantaneously heat the wafer 10 to about 450°C.

可以以絕緣性和導熱性優秀的陶瓷材質構成加熱塊120。例如，加熱塊120可以為氮化鋁（AlN）材質。此時，該導熱性可以為約170 W/m•k以上。The heating block 120 may be formed of a ceramic material having excellent insulation and thermal conductivity. For example, the heating block 120 may be made of aluminum nitride (AlN). At this time, the thermal conductivity may be about 170 W/m·k or more.

加熱塊120的導熱性優秀，因而可以利用發熱體122中發生的熱，迅速加熱晶元10。The thermal conductivity of the heating block 120 is excellent, so that the heat generated in the heating element 122 can be used to rapidly heat the wafer 10 .

加熱塊120為了提供真空力而具有延長至上部面的第一真空管線124及第二真空管線126。The heating block 120 has a first vacuum line 124 and a second vacuum line 126 extending to the upper surface in order to provide a vacuum force.

第一真空管線124和第二真空管線126不相互連接，分別提供該真空力。例如，第一真空管線124貫通加熱塊120的邊緣部位的上下，第二真空管線126貫通加熱塊120的中央部位的上下。特別是第一真空管線124可以與在加熱塊120上部面按既定長度形成的槽125連接。因此，藉由第一真空管線124提供的真空力可以在更大範圍進行作用。The first vacuum line 124 and the second vacuum line 126 are not connected to each other, providing the vacuum force, respectively. For example, the first vacuum line 124 passes through the upper and lower sides of the edge portion of the heating block 120 , and the second vacuum line 126 passes through the upper and lower portions of the central portion of the heating block 120 . In particular, the first vacuum line 124 may be connected to a groove 125 formed at a predetermined length on the upper surface of the heating block 120 . Therefore, the vacuum force provided by the first vacuum line 124 can act in a wider range.

作為一個示例，如第1圖及第2圖所示，第一真空管線124和第二真空管線126可以延長至底座塊110進行配備。作為另一示例，雖然圖中未示出，第一真空管線124和第二真空管線126也可以不延長至底座塊110，而只配備於加熱塊120。As an example, as shown in Figures 1 and 2, the first vacuum line 124 and the second vacuum line 126 may be extended to the base block 110 for provisioning. As another example, although not shown in the figures, the first vacuum line 124 and the second vacuum line 126 may not be extended to the base block 110 , but are only provided to the heating block 120 .

吸附板130配備於加熱塊120上。吸附板130藉助於第一真空管線124的真空力而固定於加熱塊120的上部面。利用第一真空管線124提供真空力或解除該真空力，從而可以更換吸附板130。因此，當吸附板130毀損或晶元10的大小變更時，可以選擇性地只更換吸附板130。The adsorption plate 130 is equipped on the heating block 120 . The adsorption plate 130 is fixed to the upper surface of the heating block 120 by the vacuum force of the first vacuum line 124 . The first vacuum line 124 is used to provide or release the vacuum force, so that the adsorption plate 130 can be replaced. Therefore, when the adsorption plate 130 is damaged or the size of the wafer 10 is changed, only the adsorption plate 130 can be selectively replaced.

另外，吸附板130具有真空孔132。真空孔132與加熱塊120的第二真空管線126連接。因此，利用藉由第二真空管線126提供的真空力，可以對放在吸附板130上的晶元10進行固定。In addition, the suction plate 130 has a vacuum hole 132 . The vacuum hole 132 is connected to the second vacuum line 126 of the heating block 120 . Therefore, the wafer 10 placed on the adsorption plate 130 can be fixed by the vacuum force provided by the second vacuum line 126 .

在利用吸附板130固定晶元10的狀態下，焊接頭100可以移動並將晶元10層疊於該晶片上。另外，可以利用吸附板130，朝向該晶片對晶元10加壓。In a state where the wafer 10 is fixed by the suction plate 130, the bonding head 100 can move and stack the wafer 10 on the wafer. In addition, the wafer 10 may be pressurized toward the wafer by the suction plate 130 .

焊接頭100還包括冷卻管線140。The welding head 100 also includes a cooling line 140 .

冷卻管線140冷卻加熱塊120而使晶元10冷卻。隨著晶元10的冷卻，晶元10的凸塊被冷卻而可以形成焊料。此時，藉助於冷卻管線140，晶元10可以冷卻到約100℃。Cooling line 140 cools heating block 120 to cool wafer 10 . As die 10 cools, the bumps of die 10 are cooled and solder can be formed. At this time, the wafer 10 can be cooled to about 100°C by means of the cooling line 140 .

具體而言，冷卻管線140包括第一冷卻管線142和第二冷卻管線144。Specifically, the cooling line 140 includes a first cooling line 142 and a second cooling line 144 .

第一冷卻管線142從底座塊110延長至第二塊114的上部面。藉由第一冷卻管線142，將冷卻流體供應到加熱塊120。作為該冷卻流體的示例，可以是空氣、氣體等。該冷卻流體與加熱塊120直接接觸並冷卻加熱塊120。The first cooling line 142 extends from the base block 110 to the upper face of the second block 114 . A cooling fluid is supplied to the heating block 120 via the first cooling line 142 . As an example of the cooling fluid, air, gas, etc. may be mentioned. The cooling fluid is in direct contact with the heating block 120 and cools the heating block 120 .

第二冷卻管線144在底座塊110中配備於第一塊112的內部，冷卻第一塊112。隨著第一塊112冷卻，藉由熱傳導，第三塊116、第二塊114及加熱塊120可以被冷卻。因此，第二冷卻管線144可以輔助地冷卻加熱塊120。The second cooling line 144 is provided inside the first block 112 in the base block 110 to cool the first block 112 . As the first block 112 cools, the third block 116, the second block 114, and the heating block 120 may be cooled by heat conduction. Accordingly, the second cooling line 144 may additionally cool the heating block 120 .

主要利用第一冷卻管線142冷卻加熱塊120，利用第二冷卻管線144輔助地進行冷卻。因此，利用冷卻管線140，可以迅速地冷卻加熱塊120。隨著加熱塊120被冷卻，可以迅速冷卻固定於吸附板130的晶元10的凸塊而形成該焊料。The heating block 120 is cooled primarily by the first cooling line 142 , and auxiliary by the second cooling line 144 . Therefore, with the cooling line 140, the heating block 120 can be rapidly cooled. As the heating block 120 is cooled, the bumps of the die 10 fixed to the suction plate 130 can be rapidly cooled to form the solder.

另一方面，加熱塊120具備使冷卻管線140，具體而言，使第一冷卻管線142部分地露出的開口127。例如，開口127可以為在貫通加熱塊120的上下的同時延長至側面的槽。On the other hand, the heating block 120 is provided with the opening 127 which partially exposes the cooling line 140 , specifically, the first cooling line 142 . For example, the opening 127 may be a groove extending to the side while penetrating the upper and lower sides of the heating block 120 .

開口127可以在延長至底座塊110上部面的多個第一冷卻管線142中，使一部分選擇性地露出，或使各個第一冷卻管線142部分地露出。The openings 127 may selectively expose a portion of the plurality of first cooling lines 142 extending to the upper surface of the base block 110 , or partially expose each of the first cooling lines 142 .

特別是在開口127在多個第一冷卻管線142中使一部分選擇性地露出的情況下，如果開口127配置於加熱塊120的一側，則加熱塊120與吸附板130的溫度分佈會不均一。因此，在晶元10上形成的焊料的品質會下降。In particular, when the openings 127 are selectively exposed in a part of the plurality of first cooling lines 142, if the openings 127 are arranged on one side of the heating block 120, the temperature distribution of the heating block 120 and the adsorption plate 130 will not be uniform. . Therefore, the quality of the solder formed on the wafer 10 may be degraded.

因此，在開口127在多個第一冷卻管線142中使一部分選擇性地露出的情況下，開口127可以以加熱塊120的中心為基準對稱地配置。此時，使加熱塊120與吸附板130的溫度分佈相對地均一，從而可以提高在晶元10上形成的焊料的品質。Therefore, when the openings 127 are selectively exposed in a part of the plurality of first cooling lines 142 , the openings 127 can be arranged symmetrically with respect to the center of the heating block 120 . At this time, the temperature distributions of the heating block 120 and the suction plate 130 are relatively uniform, so that the quality of the solder formed on the wafer 10 can be improved.

藉由第一冷卻管線142而提供的冷卻流體中的一部分提供給加熱塊120，使加熱塊120冷卻，該冷卻流體中其餘者藉由開口127提供給吸附板130，直接冷卻吸附板130。即，藉由第一冷卻管線142而提供的冷卻流體冷卻加熱塊120，冷卻吸附板130的同時，可以直接冷卻吸附板130。另外，藉由第一冷卻管線142而提供的冷卻流體可以在冷卻加熱塊120和吸附板130後，藉由開口127排出到外部。A portion of the cooling fluid provided by the first cooling line 142 is provided to the heating block 120 to cool the heating block 120 , and the rest of the cooling fluid is provided to the adsorption plate 130 through the opening 127 to directly cool the adsorption plate 130 . That is, the heating block 120 is cooled by the cooling fluid provided by the first cooling line 142 , and the adsorption plate 130 can be directly cooled while cooling the adsorption plate 130 . In addition, the cooling fluid provided through the first cooling line 142 may be discharged to the outside through the opening 127 after cooling the heating block 120 and the adsorption plate 130 .

因此，可以更迅速地冷卻固定於吸附板130的晶元10的凸塊。因此，藉助於加熱塊120，可以急速冷卻晶元10的熔化的凸塊，形成形狀良好的焊料。Therefore, the bumps of the wafer 10 fixed to the suction plate 130 can be cooled more rapidly. Therefore, by means of the heating block 120, the melted bumps of the wafer 10 can be rapidly cooled, and a solder having a good shape can be formed.

另一方面，開口127具有在貫通加熱塊120的上下的同時延長至側面的槽形態，因而容易加工加熱塊120而形成開口127。On the other hand, since the opening 127 has a groove shape extending to the side surface while penetrating the upper and lower sides of the heating block 120 , it is easy to process the heating block 120 to form the opening 127 .

另外，開口127具有在貫通加熱塊120的上下的同時延長至側面的槽形態，因而藉助於開口127，吸附板130可以相對較多的露出。因此，藉由第一冷卻管線142而提供的冷卻流體在藉由開口127排出到外部的同時，與吸附板130接觸的面積會增加。因此，可以進一步提高吸附板130被藉由第一冷卻管線142而提供的冷卻流體直接冷卻的效果。In addition, the opening 127 has a groove shape extending to the side while penetrating the upper and lower sides of the heating block 120 , so that the suction plate 130 can be exposed relatively much by the opening 127 . Therefore, while the cooling fluid provided through the first cooling line 142 is discharged to the outside through the opening 127, the area in contact with the adsorption plate 130 is increased. Therefore, the effect that the adsorption plate 130 is directly cooled by the cooling fluid provided through the first cooling line 142 can be further improved.

在開口127露出第一冷卻管線142的區域中約不足30%的情況下，藉由第一冷卻管線142而提供的冷卻流體直接冷卻吸附板130的效果會相對低下。因此，藉由第一冷卻管線142而提供的冷卻流體難以急速冷卻晶元10的凸塊。When the opening 127 exposes less than about 30% of the area of the first cooling line 142 , the effect of the cooling fluid provided by the first cooling line 142 to directly cool the adsorption plate 130 is relatively low. Therefore, it is difficult for the cooling fluid provided by the first cooling line 142 to rapidly cool the bumps of the wafer 10 .

在開口127露出第一冷卻管線142的區域中超過約70%的情況下，藉由第一冷卻管線142而提供的冷卻流體直接冷卻吸附板130的效果相對升高，但藉由第一冷卻管線142而提供的冷卻流體冷卻加熱塊120的效果會相對低下。即使藉由第一冷卻管線142而提供的冷卻流體直接冷卻吸附板130，加熱塊120的熱也會傳遞給吸附板130，因而難以急速冷卻晶元10的凸塊。另外，開口127的區域越增加，加熱塊120的區域越減小，因而加熱塊120的發熱量會減少。因此，難以急速熔化晶元10的凸塊。In the case where the opening 127 exposes more than about 70% of the area of the first cooling line 142, the effect of cooling the adsorption plate 130 directly by the cooling fluid provided by the first cooling line 142 is relatively increased, but the effect of cooling the adsorption plate 130 directly by the cooling fluid provided by the first cooling line 142 is relatively increased. The cooling fluid provided by 142 may be relatively ineffective in cooling the heating block 120 . Even if the cooling fluid provided by the first cooling line 142 directly cools the adsorption plate 130 , the heat of the heating block 120 will be transferred to the adsorption plate 130 , so that it is difficult to rapidly cool the bumps of the wafer 10 . In addition, the larger the area of the opening 127 is, the smaller the area of the heating block 120 is, and thus the calorific value of the heating block 120 is reduced. Therefore, it is difficult to rapidly melt the bumps of the wafer 10 .

因此，開口127可以使第一冷卻管線142的區域中約30%至70%露出。Accordingly, the openings 127 may expose about 30% to 70% of the area of the first cooling line 142 .

第3圖是用於說明本發明另一實施例的加熱塊的開口的剖面圖，第4圖是用於說明第3圖所示的加熱塊的開口的俯視圖。FIG. 3 is a cross-sectional view illustrating an opening of a heating block according to another embodiment of the present invention, and FIG. 4 is a plan view illustrating an opening of the heating block shown in FIG. 3 .

如果參照第3圖及第4圖，加熱塊120具有使第一冷卻管線142部分地露出的開口128。例如，開口128可以是貫通上下的貫通孔。此時，藉由第一冷卻管線142而提供的冷卻流體可以沿著第一冷卻管線142循環，或者藉由加熱塊120與吸附板130之間或加熱塊120與底座塊110的第二塊114之間而排出到外部。Referring to FIGS. 3 and 4 , the heating block 120 has an opening 128 that partially exposes the first cooling line 142 . For example, the opening 128 may be a through hole penetrating up and down. At this time, the cooling fluid provided by the first cooling line 142 can be circulated along the first cooling line 142 or by the second block 114 between the heating block 120 and the adsorption plate 130 or the heating block 120 and the base block 110 between and discharged to the outside.

開口128可以使第一冷卻管線142的區域中約30%至70%露出。The openings 128 may expose about 30% to 70% of the area of the first cooling line 142 .

第5圖是用於說明本發明又一實施例的加熱塊的開口的剖面圖。FIG. 5 is a cross-sectional view illustrating an opening of a heating block according to still another embodiment of the present invention.

如果參照第5圖，加熱塊120具有使第一冷卻管線142部分地露出的開口128。例如，開口128可以是貫通上下的貫通孔。Referring to FIG. 5 , the heating block 120 has an opening 128 that partially exposes the first cooling line 142 . For example, the opening 128 may be a through hole penetrating up and down.

另外，可以還形成有與開口128連接的連接槽129。連接槽129可以配備於加熱塊120的上部面與吸附板130的下部面中至少一者。In addition, a connection groove 129 connected to the opening 128 may be further formed. The connection groove 129 may be provided on at least one of the upper surface of the heating block 120 and the lower surface of the adsorption plate 130 .

作為一個示例，連接槽129如第5圖所示，可以在加熱塊120的上部面形成。作為另一示例，連接槽129也可以在吸附板130的下部面形成。作為又一示例，連接槽129也可以分別在加熱塊120的上部面和吸附板130的下部面形成。As an example, the connection groove 129 may be formed on the upper surface of the heating block 120 as shown in FIG. 5 . As another example, the connection groove 129 may be formed on the lower surface of the suction plate 130 . As yet another example, the connecting grooves 129 may be formed on the upper surface of the heating block 120 and the lower surface of the suction plate 130, respectively.

藉由第一冷卻管線142而提供的冷卻流體可以藉由連接槽129而排出到外部。The cooling fluid provided through the first cooling line 142 can be discharged to the outside through the connection groove 129 .

另一方面，雖然圖中未示出，連接槽129也可以以與開口128連接的方式，配備於加熱塊120的下部面和底座塊110的上部面中至少一者。On the other hand, although not shown in the drawings, the connecting groove 129 may be provided in at least one of the lower surface of the heating block 120 and the upper surface of the base block 110 in a manner of connecting with the opening 128 .

焊接頭100可以還包括溫度感測器。該溫度感測器配備於加熱塊120的內部，感知加熱塊120的溫度。根據該溫度感測器的感知結果，可以控制提供給發熱體122的電源的開啟/關閉及冷卻管線140的冷卻流體的噴射、製冷劑溫度及循環。The welding head 100 may also include a temperature sensor. The temperature sensor is equipped inside the heating block 120 to sense the temperature of the heating block 120 . According to the sensing result of this temperature sensor, the on/off of the power supply to the heating element 122 and the injection of the cooling fluid of the cooling line 140, the temperature of the refrigerant, and the circulation can be controlled.

另一方面，該溫度感測器也可以配備於吸附板130。On the other hand, the temperature sensor may also be provided on the adsorption plate 130 .

焊接頭100移送晶元10，在使得貼緊該晶片的狀態下，利用加熱塊120加熱晶元10，熔化晶元10的凸塊後，利用冷卻管線140使該晶元10冷卻，從而將晶元10焊接於該晶片。焊接頭100急速加熱、急速冷卻晶元10，因而在該晶片與晶元10之間可以形成品質優秀、形狀良好的焊料。The wafer 10 is transferred by the bonding head 100, and the wafer 10 is heated by the heating block 120 in a state where it is in close contact with the wafer. Element 10 is soldered to the chip. The soldering head 100 rapidly heats and rapidly cools the wafer 10 , so that a solder of excellent quality and good shape can be formed between the wafer and the wafer 10 .

焊接頭100可以迅速執行該晶元10的加熱和冷卻，因而可以提高將晶元10焊接於該晶片的工序的效率性。The bonding head 100 can rapidly perform heating and cooling of the wafer 10, thereby improving the efficiency of the process of bonding the wafer 10 to the wafer.

實驗例Experimental example

【表1】【Table 1】

Figure 02_image001
Figure 02_image001

如果參照表1，在焊接頭100中，在將加熱塊120的開口127保持既定大小的狀態下，在變化使底座塊110的第一冷卻管線142的區域露出的比率的同時，測量了將吸附板130冷卻到既定溫度需要的時間。Referring to Table 1, in the welding head 100, while maintaining the opening 127 of the heating block 120 at a predetermined size, while changing the ratio of the exposed area of the first cooling line 142 of the base block 110, the adsorption capacity was measured. The time required for the plate 130 to cool to a given temperature.

當開口127不露出第一冷卻管線142區域時，吸附板130的冷卻所需時間最長，為5.4秒，當開口127使第一冷卻管線142的區域露出33.33%，即1/3時，吸附板130的冷卻所需時間最短，為3.5秒。另外可知，與開口127不露出第一冷卻管線142區域的情形相比，當開口127使第一冷卻管線142的區域露出時，吸附板130的冷卻所需時間短。When the opening 127 does not expose the area of the first cooling line 142, the cooling time of the adsorption plate 130 is the longest, which is 5.4 seconds. 130 has the shortest cooldown at 3.5 seconds. In addition, compared with the case where the opening 127 does not expose the region of the first cooling line 142, when the opening 127 exposes the region of the first cooling line 142, the time required for cooling of the adsorption plate 130 is shorter.

即，可知當開口127使第一冷卻管線142的區域露出時，藉由第一冷卻管線142而提供的冷卻流體冷卻加熱塊120，不僅間接冷卻吸附板130，而且直接冷卻吸附板130，從而吸附板130迅速冷卻。That is, it can be seen that when the opening 127 exposes the region of the first cooling line 142, the cooling fluid provided by the first cooling line 142 cools the heating block 120, not only indirectly cools the adsorption plate 130, but also directly cools the adsorption plate 130, thereby adsorbing Plate 130 cools rapidly.

第6圖是用於說明本發明一個實施例的焊接裝置的概略構成圖，第7圖是用於說明第6圖所示的卡盤結構物的俯視圖，第8圖是用於說明第6圖所示的卡盤板的仰視圖，第9圖是放大第6圖所示的A部分的放大剖面圖。Fig. 6 is a schematic configuration diagram for explaining a welding apparatus according to an embodiment of the present invention, Fig. 7 is a plan view for explaining the chuck structure shown in Fig. 6, and Fig. 8 is for explaining Fig. 6 Fig. 9 is an enlarged cross-sectional view of the part A shown in Fig. 6, which is a bottom view of the shown chuck plate.

如果參照第6圖至第9圖，焊接裝置300包括焊接頭100及卡盤結構物200。Referring to FIGS. 6 to 9 , the welding apparatus 300 includes the welding head 100 and the chuck structure 200 .

焊接頭100用於將晶元10在卡盤結構物200上移送並焊接於晶片20，包括底座塊110、加熱塊120及吸附板130。雖然圖中未示出，焊接頭100為了晶元10的移送，可以配備得能夠進行水平移動、上下移動、旋轉、翻轉等。The bonding head 100 is used for transferring and bonding the wafer 10 on the chuck structure 200 to the wafer 20 , and includes the base block 110 , the heating block 120 and the suction plate 130 . Although not shown in the drawings, the bonding head 100 may be equipped to perform horizontal movement, vertical movement, rotation, inversion, and the like for the transfer of the wafer 10 .

對焊接頭100的具體說明與第1圖至第5圖所示的焊接頭100實質上相同，因而省略。The specific description of the welding head 100 is substantially the same as that of the welding head 100 shown in FIGS. 1 to 5 , and thus is omitted.

另外，焊接頭100為了晶元10與晶片20的焊接，可以配備得使吸附板130朝向下方。In addition, the bonding head 100 may be equipped with the suction plate 130 facing downward for bonding the wafer 10 and the wafer 20 .

卡盤結構物200支撐晶片20。此時，在晶片20上可以形成有電路圖案。The chuck structure 200 supports the wafer 20 . At this time, a circuit pattern may be formed on the wafer 20 .

卡盤結構物200包括加熱盤210、卡盤板220、引導環230、夾具240、電源電纜250及溫度感測器260。The chuck structure 200 includes a heating plate 210 , a chuck plate 220 , a guide ring 230 , a clamp 240 , a power cable 250 and a temperature sensor 260 .

加熱盤210具有大致圓盤形態，內置藉助於從外部接入的電源而發熱的發熱體212。The heating plate 210 has a substantially disc shape, and incorporates a heat generating body 212 that generates heat by a power source supplied from the outside.

發熱體212可以配備得在加熱盤210的內側面構成既定的圖案。作為發熱體212的示例，可以為電極層、發熱線圈等。The heating element 212 may be provided so as to form a predetermined pattern on the inner surface of the heating plate 210 . As an example of the heating body 212, an electrode layer, a heating coil, or the like may be used.

加熱盤210具有延長至上部面的第三真空管線214及第四真空管線215。第三真空管線214和第四真空管線215可以分別從加熱盤210的下部面或側面延長到該上部面。第三真空管線214和第四真空管線215相互不連接。第三真空管線214與真空泵（圖上未示出）連接，提供用於吸附晶片20的真空力。第四真空管線215與真空泵（圖上未示出）連接，提供用於吸附卡盤板220的真空力。The heating plate 210 has a third vacuum line 214 and a fourth vacuum line 215 extending to the upper surface. The third vacuum line 214 and the fourth vacuum line 215 may extend from the lower face or side of the heating pan 210 to the upper face, respectively. The third vacuum line 214 and the fourth vacuum line 215 are not connected to each other. The third vacuum line 214 is connected to a vacuum pump (not shown in the figure) to provide a vacuum force for sucking the wafer 20 . The fourth vacuum line 215 is connected with a vacuum pump (not shown in the figure) to provide a vacuum force for sucking the chuck plate 220 .

加熱盤210在上部面具有定位銷216。定位銷216用於對加熱盤210的卡盤板220進行排列，可以配備多個。定位銷216可以配置於加熱盤210的上部面邊緣。The heating plate 210 has positioning pins 216 on the upper surface. The positioning pins 216 are used for arranging the chuck plates 220 of the heating plate 210, and a plurality of them can be provided. The positioning pins 216 may be disposed on the edge of the upper surface of the heating plate 210 .

另外，加熱盤210具有沿著上部面邊緣形成的槽218。槽218可以用於固定引導環230。In addition, the heating pan 210 has grooves 218 formed along the edge of the upper surface. Slot 218 may be used to secure guide ring 230 .

卡盤板220具有大致圓盤形態，放於加熱盤210上。卡盤板220在上部面支撐晶片20。The chuck plate 220 has a substantially disc shape and is placed on the heating plate 210 . The chuck plate 220 supports the wafer 20 on the upper surface.

卡盤板220為了吸附晶片20而具有與第三真空管線214連接的第五真空管線222。The chuck plate 220 has a fifth vacuum line 222 connected to the third vacuum line 214 for sucking the wafer 20 .

第五真空管線222具有真空槽222a及多個真空孔222b。The fifth vacuum line 222 has a vacuum groove 222a and a plurality of vacuum holes 222b.

真空槽222a在卡盤板220的下部面形成。例如，真空槽222a以卡盤板220的下部面中心為基準，可以具有由具有同心圓形態的槽和呈輻射狀延長的槽相結合的形狀，或具有圓形槽形狀。此時，真空槽222a為了防止該真空力的洩漏，不延長至卡盤板220的下部面邊緣。The vacuum groove 222a is formed in the lower surface of the chuck plate 220 . For example, the vacuum groove 222a may have a shape combining a groove having a concentric shape and a groove extending radially, or a circular groove shape with reference to the center of the lower surface of the chuck plate 220 . At this time, the vacuum groove 222a is not extended to the edge of the lower surface of the chuck plate 220 in order to prevent the leakage of the vacuum force.

卡盤板220在放於加熱盤210上的同時，真空槽222a被加熱盤210的上部面限定而形成空間。另外，真空槽222a與第三真空管線214連接。When the chuck plate 220 is placed on the heating platen 210, the vacuum groove 222a is defined by the upper surface of the heating platen 210 to form a space. In addition, the vacuum tank 222a is connected to the third vacuum line 214 .

真空孔222b貫通卡盤板220，從真空槽222a所形成的下部面延長至卡盤板220的上部面。真空孔222b相互隔開地排列。例如，真空孔222b可以排列成同心圓形狀或輻射形狀。The vacuum hole 222 b penetrates the chuck plate 220 and extends from the lower surface formed by the vacuum groove 222 a to the upper surface of the chuck plate 220 . The vacuum holes 222b are arranged to be spaced apart from each other. For example, the vacuum holes 222b may be arranged in a concentric circular shape or a radial shape.

因此，第五真空管線222與第三真空管線214連接，可以利用藉由第三真空管線214而提供的真空力來吸附晶片20。Therefore, the fifth vacuum line 222 is connected with the third vacuum line 214 , and the vacuum force provided by the third vacuum line 214 can be used to adsorb the wafer 20 .

另外，卡盤板220在下部面具有以與第四真空管線215連接的方式配備的真空槽223，以便真空吸附於加熱盤210。In addition, the chuck plate 220 has a vacuum groove 223 provided on the lower surface so as to be connected to the fourth vacuum line 215 so as to be vacuum-adsorbed to the heating platen 210 .

真空槽223在卡盤板220的下部面形成。例如，真空槽223以卡盤板220的下部面中心為基準，可以具有由具有同心圓形態的槽和呈輻射狀延長的槽相結合的形狀，或具有圓形槽形狀。此時，真空槽223為了防止該真空力的洩漏，不延長至卡盤板220的下部面邊緣。另外，如第8圖所示，真空槽223可以形成得不與第五真空管線222相互連接。The vacuum groove 223 is formed on the lower surface of the chuck plate 220 . For example, the vacuum groove 223 may have a shape combining a groove having a concentric shape and a groove extending radially, or a circular groove shape with reference to the center of the lower surface of the chuck plate 220 . At this time, in order to prevent the leakage of the vacuum force, the vacuum groove 223 is not extended to the edge of the lower surface of the chuck plate 220 . In addition, as shown in FIG. 8, the vacuum tank 223 may be formed so as not to be connected to the fifth vacuum line 222.

卡盤板220在放於加熱盤210上的同時，真空槽223被加熱盤210的上部面限定而形成空間。另外，真空槽223與第四真空管線215連接。When the chuck plate 220 is placed on the heating plate 210, the vacuum groove 223 is defined by the upper surface of the heating plate 210 to form a space. In addition, the vacuum tank 223 is connected to the fourth vacuum line 215 .

真空槽223與第四真空管線215連接，利用藉由第四真空管線215而提供的真空力，卡盤板220可以在加熱盤210上貼緊、固定。因此，可以使卡盤板220的扭曲或彎曲實現最小化，平坦地支撐卡盤板220上的晶片20。The vacuum tank 223 is connected to the fourth vacuum line 215 , and the chuck plate 220 can be closely attached and fixed on the heating plate 210 by the vacuum force provided by the fourth vacuum line 215 . Therefore, the twisting or bending of the chuck plate 220 can be minimized, and the wafer 20 on the chuck plate 220 can be supported flatly.

加熱盤210和卡盤板220可以藉助於藉由第四真空管線215及真空槽223提供的該真空力而保持貼緊的狀態。因此，不需要用於連結加熱盤210與卡盤板220的另外的連結構件。The heating plate 210 and the chuck plate 220 can be kept in close contact by the vacuum force provided by the fourth vacuum line 215 and the vacuum groove 223 . Therefore, an additional connecting member for connecting the heating plate 210 and the chuck plate 220 is not required.

另外，可以解除藉由第三真空管線214和第四真空管線215而提供的該真空力，分離加熱盤210和卡盤板220並進行更換。因此，可以迅速地執行卡盤結構物200的維護。In addition, the vacuum force provided by the third vacuum line 214 and the fourth vacuum line 215 can be released, and the heating plate 210 and the chuck plate 220 can be separated and replaced. Therefore, maintenance of the chuck structure 200 can be performed quickly.

另一方面，當加熱盤210的上部面和卡盤板220的下部面分別具有超過約10㎛的平坦度時，加熱盤210與卡盤板220之間會存在細微的間隔。因此，該真空力會藉由加熱盤210與卡盤板220之間而洩漏。On the other hand, when the upper surface of the heating plate 210 and the lower surface of the chuck plate 220 have flatness exceeding about 10㎛, respectively, a fine gap exists between the heating plate 210 and the chuck plate 220 . Therefore, the vacuum force may leak between the heating plate 210 and the chuck plate 220 .

加熱盤210的上部面與卡盤板220的下部面分別具有約10㎛以下的平坦度，較佳地，具有7㎛以下的平坦度。此時，加熱盤210與卡盤板220可以貼緊，可以防止該真空力藉由加熱盤210與卡盤板220之間洩漏。The upper surface of the heating plate 210 and the lower surface of the chuck plate 220 respectively have a flatness of about 10㎛ or less, preferably, a flatness of 7㎛ or less. At this time, the heating plate 210 and the chuck plate 220 can be in close contact, which can prevent the vacuum force from leaking between the heating plate 210 and the chuck plate 220 .

卡盤板220將加熱盤210中發生的熱傳遞給晶片20。此時，晶片20可以保持約140至150℃的溫度，以便容易地實現晶元10與晶片20的焊接。The chuck plate 220 transfers the heat generated in the heating plate 210 to the wafer 20 . At this time, the wafer 20 may be maintained at a temperature of about 140 to 150° C. so as to easily realize the bonding of the wafer 10 and the wafer 20 .

加熱盤210及卡盤板220可以分別由陶瓷材質構成。作為該陶瓷材質的示例，可以為氮化鋁AlN。該氮化鋁具有高導熱率，因而發熱體212中發生的熱可以均一地傳遞給加熱盤210及卡盤板220。另外，可以使卡盤板220的溫度分佈均一，均一地加熱晶片20。The heating plate 210 and the chuck plate 220 may be respectively made of ceramic materials. As an example of the ceramic material, aluminum nitride AlN may be used. This aluminum nitride has high thermal conductivity, so that the heat generated in the heat generating body 212 can be uniformly transferred to the heating plate 210 and the chuck plate 220 . In addition, the temperature distribution of the chuck plate 220 can be made uniform, and the wafer 20 can be heated uniformly.

卡盤板220具有用於容納定位銷216的容納槽224。The chuck plate 220 has a receiving groove 224 for receiving the positioning pin 216 .

容納槽224可以形成在與加熱盤210的定位銷216對應的位置。例如，容納槽224也可以配置於卡盤板220的邊緣。The receiving grooves 224 may be formed at positions corresponding to the positioning pins 216 of the heating plate 210 . For example, the accommodating groove 224 may also be arranged on the edge of the chuck plate 220 .

當卡盤板220安放於加熱盤210的上部面時，加熱盤210的定位銷216可以插入於卡盤板220的容納槽224。因此，加熱盤210與卡盤板220可以準確地定位。When the chuck plate 220 is placed on the upper surface of the heating plate 210 , the positioning pins 216 of the heating plate 210 can be inserted into the accommodating grooves 224 of the chuck plate 220 . Therefore, the heating plate 210 and the chuck plate 220 can be accurately positioned.

以上說明瞭在加熱盤210中配備定位銷216、在卡盤板220中形成容納槽224的情形，但也可以在加熱盤210中形成容納槽、在卡盤板220中配備定位銷。The above describes the case where the heating plate 210 is provided with the positioning pins 216 and the chuck plate 220 is provided with the accommodating grooves 224 .

另外，卡盤板220具有沿著上部面邊緣形成的槽226。槽226可以用於安放夾具240。In addition, the chuck plate 220 has a groove 226 formed along the edge of the upper surface. Slots 226 may be used to accommodate clamps 240 .

引導環230掛接於沿著加熱盤210的上面邊緣形成的槽218，引導加熱盤210的外周。The guide ring 230 is hooked to the groove 218 formed along the upper edge of the heating plate 210 to guide the outer circumference of the heating plate 210 .

具體而言，引導環230具有掛接棱232，掛接棱232掛接於槽218，從而引導環230加裝於加熱盤210。Specifically, the guide ring 230 has a hooking edge 232 , and the hooking edge 232 is hooked to the groove 218 , so that the guide ring 230 is attached to the heating plate 210 .

另一方面，引導環230的上面和加熱盤210的上面可以位於相同的高度。此時，在將引導環230加裝於加熱盤210的狀態下，可以將卡盤板220容易地安放於加熱盤210的上部面。On the other hand, the upper surface of the guide ring 230 and the upper surface of the heating plate 210 may be located at the same height. At this time, in a state where the guide ring 230 is attached to the heating plate 210 , the chuck plate 220 can be easily placed on the upper surface of the heating plate 210 .

另外，在引導環230的上面處在高於加熱盤210上面位置的情況下，當將卡盤板220安放於加熱盤210的上部面時，可以將引導環230用作定位基準。In addition, when the upper surface of the guide ring 230 is higher than the upper surface of the heating plate 210, the guide ring 230 can be used as a positioning reference when the chuck plate 220 is placed on the upper surface of the heating plate 210.

夾具240以覆蓋卡盤板220的上部面邊緣的狀態固定於引導環。夾具240可以藉助於連結螺絲242而固定於引導環230。The jig 240 is fixed to the guide ring in a state of covering the edge of the upper surface of the chuck plate 220 . The clamp 240 may be fixed to the guide ring 230 by means of the attachment screws 242 .

作為一個示例，夾具240配備多個，可以部分地覆蓋卡盤板220的上部面邊緣。作為另一示例，夾具240也可以具有大致環形態，整體地覆蓋卡盤板220的上部面邊緣。As an example, the jig 240 is provided in multiples that can partially cover the upper face edge of the chuck plate 220 . As another example, the clamp 240 may also have a substantially ring shape, covering the upper face edge of the chuck plate 220 in its entirety.

夾具240以覆蓋卡盤板220的上部面邊緣的狀態固定於引導環230，因而夾具240可以將卡盤板220向下方加壓。因此，夾具240可以使卡盤板220貼緊加熱盤210。Since the jig 240 is fixed to the guide ring 230 in a state of covering the upper surface edge of the chuck plate 220, the jig 240 can press the chuck plate 220 downward. Therefore, the clamp 240 can make the chuck plate 220 abut the heating plate 210 .

夾具240具有掛接棱244，掛接棱244可以放在卡盤板220的槽226中。因此，可以使夾具240的上面和卡盤板220的上面位於相同的高度。因此，可以在沒有夾具240的妨礙的情況下，在將晶片20穩定地移送到卡盤板220上部面時進行安放。The clamp 240 has hooking ribs 244 that can be seated in the slots 226 of the chuck plate 220 . Therefore, the upper surface of the jig 240 and the upper surface of the chuck plate 220 can be positioned at the same height. Therefore, the wafer 20 can be placed while being stably transferred to the upper surface of the chuck plate 220 without being hindered by the jig 240 .

引導環230及夾具240可以分別由陶瓷材質構成。此時，引導環230及夾具240可以使用具有比加熱盤210及卡盤板220低的導熱率的陶瓷材質。例如，引導環230及夾具240可以由氧化鋁（Al2O3）材質構成。該氧化鋁由於導熱率比該氮化鋁低，因而引導環230及夾具240可以防止藉由加熱盤210及卡盤板220側面的熱損失。The guide ring 230 and the clamp 240 may be made of ceramic materials, respectively. At this time, the guide ring 230 and the jig 240 may be made of a ceramic material having a lower thermal conductivity than the heating plate 210 and the chuck plate 220 . For example, the guide ring 230 and the clamp 240 may be made of aluminum oxide (Al2O3). Since the thermal conductivity of the alumina is lower than that of the aluminum nitride, the guide ring 230 and the jig 240 can prevent heat loss from the side surfaces of the heating plate 210 and the chuck plate 220 .

電源電纜250延長至加熱盤210的內部，與發熱體212連接，提供發熱體212發熱所需的電源。The power cable 250 is extended to the inside of the heating plate 210 and is connected to the heating element 212 to provide the power required by the heating element 212 to generate heat.

溫度感測器260從加熱盤210的外部延長至內部，測量發熱體212的溫度。溫度感測器260測量的溫度可以用於發熱體212的溫度控制。The temperature sensor 260 extends from the outside to the inside of the heating plate 210 and measures the temperature of the heating element 212 . The temperature measured by the temperature sensor 260 can be used for temperature control of the heating element 212 .

溫度感測器260例如可以為熱電偶。The temperature sensor 260 may be, for example, a thermocouple.

該卡盤結構物200可以利用吸附晶片20所需的真空力，使加熱盤210與卡盤板220相互貼緊。因此，不需要用於連結加熱盤210與卡盤板220的另外的連結構件。The chuck structure 200 can make the heating plate 210 and the chuck plate 220 close to each other by utilizing the vacuum force required for adsorbing the wafer 20 . Therefore, an additional connecting member for connecting the heating plate 210 and the chuck plate 220 is not required.

另外，只解除該真空力，便可分離加熱盤210和卡盤板220並進行更換。因此，可以迅速地執行卡盤結構物200的維護。In addition, only by releasing the vacuum force, the heating plate 210 and the chuck plate 220 can be separated and replaced. Therefore, maintenance of the chuck structure 200 can be performed quickly.

焊接裝置300利用卡盤結構物200固定晶片20，在加熱到既定溫度的狀態下，利用焊接頭100移送晶元10，使得貼緊晶片20後，用焊接頭100加熱晶元10，使晶元10的凸塊熔化後，使晶元10冷卻，從而將晶元10焊接於晶片20。因此，在晶元10與晶片20之間可以形成品質優秀、形狀良好的焊料。另外，由於可以迅速執行晶元10的加熱和冷卻，因而可以提高利用焊接裝置300而將晶元10焊接於晶片20的工序的效率性。The bonding apparatus 300 fixes the wafer 20 with the chuck structure 200 , and transfers the wafer 10 with the bonding head 100 in a state of heating to a predetermined temperature so that the wafer 20 is closely contacted, and then heats the wafer 10 with the bonding head 100 to make the wafer 10 After the bumps of 10 are melted, the die 10 is cooled, thereby bonding the die 10 to the wafer 20 . Therefore, a solder of good quality and good shape can be formed between the die 10 and the wafer 20 . In addition, since the heating and cooling of the wafer 10 can be rapidly performed, the efficiency of the process of bonding the wafer 10 to the wafer 20 using the bonding apparatus 300 can be improved.

以上參照本發明較佳實施例進行了說明，但所屬技術領域的具有通常知識者可以理解，在不超出以下申請專利範圍記載的本發明的思想及領域的範圍內，可以多樣地修訂及變更本發明。The above description has been made with reference to the preferred embodiments of the present invention, but those with ordinary knowledge in the technical field can understand that the present invention can be variously revised and changed within the scope of the idea and field of the present invention described in the following application for patent. invention.

100‧‧‧焊接頭110‧‧‧底座塊112‧‧‧第一塊114‧‧‧第二塊116‧‧‧第三塊120‧‧‧加熱塊122、212‧‧‧發熱體124‧‧‧第一真空管線125、218、226‧‧‧槽126‧‧‧第二真空管線127、128‧‧‧開口129‧‧‧連接槽130‧‧‧吸附板132、222b‧‧‧真空孔140‧‧‧冷卻管線142‧‧‧第一冷卻管線144‧‧‧第二冷卻管線200‧‧‧卡盤結構物210‧‧‧加熱盤214‧‧‧第三真空管線215‧‧‧第四真空管線216‧‧‧定位銷220‧‧‧卡盤板222‧‧‧第五真空管線222a、223‧‧‧真空槽224‧‧‧容納槽230‧‧‧引導環232、244‧‧‧掛接棱240‧‧‧夾具242‧‧‧螺絲250‧‧‧電源電纜260‧‧‧溫度感測器300‧‧‧焊接裝置10‧‧‧晶元20‧‧‧晶片100‧‧‧Welding head 110‧‧‧Base block 112‧‧‧First block 114‧‧‧Second block 116‧‧‧Third block 120‧‧‧Heating block 122, 212‧‧‧Heating body 124‧‧ ‧First vacuum pipelines 125, 218, 226‧‧‧Slot 126‧‧‧Second vacuum pipeline 127, 128‧‧‧Opening 129‧‧‧Connecting groove 130‧‧‧Adsorption plate 132, 222b‧‧‧Vacuum hole 140 ‧‧‧Cooling line 142‧‧‧First cooling line 144‧‧‧Second cooling line 200‧‧‧Chuck structure 210‧‧‧Heat plate 214‧‧‧Third vacuum line 215‧‧‧Fourth vacuum line Line 216‧‧‧Locating pin 220‧‧‧Chuck plate 222‧‧‧Fifth vacuum line 222a, 223‧‧‧Vacuum groove 224‧‧‧Accommodating groove 230‧‧‧Guide ring 232, 244‧‧‧hanging Edge 240‧‧‧Clamp 242‧‧‧Screw250‧‧‧Power Cable 260‧‧‧Temperature Sensor 300‧‧‧Welding Device 10‧‧‧Epi20‧‧‧Chip

第1圖是用於說明本發明一個實施例的焊接頭的剖面圖。 第2圖是用於說明第1圖所示的焊接頭中加熱塊的開口的俯視圖。 第3圖是用於說明本發明另一實施例的加熱塊的開口的剖面圖。 第4圖是用於說明第3圖所示的加熱塊的開口的俯視圖。 第5圖是用於說明本發明又一實施例的加熱塊的開口的剖面圖。 第6圖是用於說明本發明一個實施例的焊接裝置的概略構成圖。 第7圖是用於說明第6圖所示的卡盤結構物的俯視圖。 第8圖是用於說明第6圖所示的卡盤板的仰視圖。 第9圖是放大第6圖所示的A部分的放大剖面圖。FIG. 1 is a cross-sectional view of a welding head for explaining an embodiment of the present invention. FIG. 2 is a plan view for explaining the opening of the heating block in the welding head shown in FIG. 1 . FIG. 3 is a cross-sectional view illustrating an opening of a heating block according to another embodiment of the present invention. FIG. 4 is a plan view for explaining the opening of the heating block shown in FIG. 3 . FIG. 5 is a cross-sectional view illustrating an opening of a heating block according to still another embodiment of the present invention. Fig. 6 is a schematic configuration diagram for explaining a welding apparatus according to an embodiment of the present invention. FIG. 7 is a plan view for explaining the chuck structure shown in FIG. 6 . FIG. 8 is a bottom view for explaining the chuck plate shown in FIG. 6 . FIG. 9 is an enlarged cross-sectional view of a portion A shown in FIG. 6 .

100‧‧‧焊接頭 100‧‧‧Welding Head

110‧‧‧底座塊 110‧‧‧Pedestal block

112‧‧‧第一塊 112‧‧‧First block

114‧‧‧第二塊 114‧‧‧Second block

116‧‧‧第三塊 116‧‧‧The third block

120‧‧‧加熱塊 120‧‧‧Heating block

122‧‧‧發熱體 122‧‧‧heating body

124‧‧‧第一真空管線 124‧‧‧First vacuum line

125‧‧‧槽 125‧‧‧Slot

126‧‧‧第二真空管線 126‧‧‧Second vacuum line

127‧‧‧開口 127‧‧‧Opening

130‧‧‧吸附板 130‧‧‧Adsorption plate

132‧‧‧真空孔 132‧‧‧Vacuum hole

140‧‧‧冷卻管線 140‧‧‧Cooling line

142‧‧‧第一冷卻管線 142‧‧‧First cooling line

144‧‧‧第二冷卻管線 144‧‧‧Second cooling line

200‧‧‧卡盤結構物 200‧‧‧Chuck structure

210‧‧‧加熱盤 210‧‧‧Heating plate

220‧‧‧卡盤板 220‧‧‧Chuck plate

230‧‧‧引導環 230‧‧‧Guide ring

240‧‧‧夾具 240‧‧‧Clamp

300‧‧‧焊接裝置 300‧‧‧Welding device

10‧‧‧晶元 10‧‧‧Epistar

20‧‧‧晶片 20‧‧‧Chip

Claims (9)

一種焊接頭，其包括： 一底座塊； 一加熱塊，其配備於該底座塊上，內置用於藉助於從外部接入的電源而發熱並加熱晶元的凸塊的一發熱體，為了提供真空力而具有延長至上部面的一第一真空管線及一第二真空管線； 一吸附板，其藉助於該第一真空管線的真空力而固定於該加熱塊上，為了以真空力固定晶元而具有與該第二真空管線連接的一真空孔；以及 一冷卻管線，其從該底座塊的內部延長至該底座塊的上部面，用於向該加熱塊提供冷卻流體而使該晶元的凸塊冷卻，從而形成焊料，該加熱塊為了追加冷卻該晶元的凸塊而具有使該冷卻管線部分地露出的開口，以便該冷卻管線的冷卻流體也提供給該吸附板。A soldering head, comprising: a base block; a heating block equipped on the base block, with a built-in heating body for generating heat and heating a bump of a wafer by means of an externally connected power supply, in order to provide The vacuum force has a first vacuum line and a second vacuum line extending to the upper surface; an adsorption plate, which is fixed on the heating block by the vacuum force of the first vacuum line, in order to fix the crystal by the vacuum force The element has a vacuum hole connected to the second vacuum line; and a cooling line extending from the interior of the base block to the upper face of the base block for supplying cooling fluid to the heating block to cool the wafer The bumps are cooled to form solder, and the heating block has openings that partially expose the cooling lines in order to additionally cool the bumps of the wafer, so that the cooling fluid of the cooling lines is also supplied to the suction plate. 如申請專利範圍第1項所述之焊接頭，其中該開口露出該冷卻管線的區域中的30%至70%。The welded joint of claim 1, wherein the opening exposes 30% to 70% of the area of the cooling line. 如申請專利範圍第1項所述之焊接頭，其中該開口是從該加熱塊的內側延長至側面的一槽。The welding head of claim 1, wherein the opening is a groove extending from the inner side to the side surface of the heating block. 如申請專利範圍第1項所述之焊接頭，其中該開口是貫通該加熱塊的上下的一貫通孔。The solder joint according to claim 1, wherein the opening is a through hole penetrating the upper and lower sides of the heating block. 如申請專利範圍第4項所述之焊接頭，其中更包括一連接槽，其以與該貫通孔連接的方式，形成在該加熱塊的上部面和該吸附板的下部面中至少一者上，用於將藉由該冷卻管線供應的冷卻流體，藉由該加熱塊與該吸附板之間排出到外部。The welding head according to claim 4, further comprising a connecting groove formed on at least one of the upper surface of the heating block and the lower surface of the suction plate in a manner of being connected with the through hole , for discharging the cooling fluid supplied by the cooling line to the outside through the space between the heating block and the adsorption plate. 如申請專利範圍第1項所述之焊接頭，其中隨著該吸附板的毀損或該晶元大小的變更，該吸附板能夠更換。The solder joint of claim 1, wherein the suction plate can be replaced as the suction plate is damaged or the size of the die is changed. 如申請專利範圍第1項所述之焊接頭，其中該底座塊包括： 一第一塊，其由金屬材質構成；以及 一第二塊，其配備於該第一塊上，為了減少加熱塊中發生的熱傳遞到該第一塊，以具有低於該加熱塊的導熱性的陶瓷材質構成。The welding head as described in claim 1, wherein the base block comprises: a first block, which is made of metal material; and a second block, which is equipped on the first block, in order to reduce the amount of heat in the heating block The generated heat is transferred to the first block, constructed of a ceramic material having a thermal conductivity lower than that of the heating block. 如申請專利範圍第7項所述之焊接頭，其中該底座塊更包括一第三塊，其配備於該第一塊與該第二塊之間，為了減少該第二塊的熱傳遞到該第一塊而以陶瓷材質構成。The welding joint of claim 7, wherein the base block further comprises a third block disposed between the first block and the second block, in order to reduce the heat transfer of the second block to the The first piece is made of ceramic material. 如申請專利範圍第1項所述之焊接頭，其更包括一溫度感測器，其配備於該加熱塊的內部，用於感知該加熱塊的溫度。The welding head according to claim 1, further comprising a temperature sensor disposed inside the heating block for sensing the temperature of the heating block.
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TW201436080A (en) * 2013-01-21 2014-09-16 Besi Switzerland Ag Bonding head with a heatable and coolable suction member
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