JP2017220571A - Joining method, program, computer storage medium, joining device, and joining system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To appropriately join a plurality of chips arranged on a substrate to the substrate.SOLUTION: A joining method, in a state in which a wafer has a first temperature T1 inside an airtight treatment chamber, compresses the inside of the treatment chamber to a second pressure P2 higher than an atmospheric pressure (step S3); then, heats the wafer to a second temperature T2 higher than the first temperature T1 (step S4); then, joins a plurality of chips to the wafer while keeping the inside of the treatment chamber at the second pressure P2 and keeping the wafer at the second temperature T2 (step S5); then, cools the wafer to a third temperature T3 lower than the second temperature T2 (step S6); and, then, decompresses the inside of the treatment chamber to the atmospheric pressure (step S7).SELECTED DRAWING: Figure 9

Description

  The present invention relates to a bonding method for bonding a plurality of chips arranged on a substrate to the substrate, a program, a computer storage medium, a bonding apparatus for executing the bonding method, and a bonding system including the bonding apparatus.

  In recent years, in semiconductor devices, semiconductor chips (hereinafter referred to as “chips”) are highly integrated. When a plurality of highly integrated chips are arranged in a horizontal plane and these chips are connected by wiring to produce a product, the wiring length increases, thereby increasing the wiring resistance and wiring delay. Is concerned.

  Therefore, it has been proposed to manufacture a semiconductor device using a three-dimensional integration technique in which chips are three-dimensionally stacked. In this three-dimensional integration technique, stacked chips are joined via bumps, for example, and the stacked chips are electrically connected.

  As the three-dimensional integration method, for example, a method of bonding and stacking a plurality of chips on a semiconductor wafer (hereinafter referred to as “wafer”) is used. In this method, a bonding apparatus shown in Patent Document 1 is used to press and bond a wafer and a chip while heating. That is, a plurality of chips are arranged on a wafer, a plate-like body is brought into contact with the plurality of chips, and then the wafer and the chip-like body are pressed while heating the wafer and the chip, thereby Join.

JP 2004-122216 A

  However, when a plurality of chips are arranged on the wafer, the height of the plurality of chips may vary. In such a case, if a plate-like body is used as in Patent Document 1, the wafer and the plurality of chips cannot be pressed uniformly. For example, if the pressure when pressing the wafer and the chip is too small, the bonding strength between the wafer and the chip becomes insufficient. On the other hand, for example, if the pressure when pressing the wafer and the chip is too large, the bumps may be deformed, and further, the semiconductor device may be damaged.

  Therefore, for example, it is conceivable to pressurize the wafer and a plurality of chips by supplying a pressurized gas to the inside of the processing chamber while heating the wafer on the mounting table inside the processing chamber. In such a case, for example, even if the heights of the plurality of chips on the wafer vary, the plurality of chips are pressed by the pressurized gas filled in the processing chamber, so that the wafer and the plurality of chips are uniformly and appropriately arranged. It can be pressed with an appropriate pressure.

  However, when the inside of the processing chamber is pressurized while the wafer is at a high temperature in this way, bumps made of metal such as copper are oxidized, and as a result, bonding failure due to the oxidized bumps may occur. Further, when the wafer on the mounting table is rapidly heated or cooled, the film thickness of the chip on the wafer is small, so that the chip is warped, and as a result, bonding failure may occur. Therefore, there is room for improvement in bonding the wafer and a plurality of chips.

  This invention is made | formed in view of this point, and it aims at joining the some chip | tip arrange | positioned on a board | substrate appropriately with the said board | substrate.

  In order to achieve the above object, the present invention provides a bonding method for bonding a plurality of chips arranged on a substrate to the substrate, wherein the substrate has a temperature equal to or lower than a first temperature in a sealed processing chamber. In a state, a first step of pressurizing the inside of the processing chamber to a predetermined pressure higher than atmospheric pressure, a second step of heating the substrate to a second temperature higher than the first temperature, and then A third step of maintaining the inside of the processing chamber at the predetermined pressure and maintaining the substrate at the second temperature to bond the substrate and a plurality of chips, and thereafter, from the second temperature. And a fourth step of cooling the substrate to a low third temperature, and then a fifth step of reducing the pressure inside the processing chamber to atmospheric pressure.

  According to the present invention, in the first step, the inside of the processing chamber is pressurized in a state where the substrate is at a low temperature equal to or lower than the first temperature, so that, for example, oxidation of bumps made of metal can be suppressed. In addition, since the substrate is gradually heated while the inside of the processing chamber is pressurized in the second step, and the substrate is gradually cooled while the inside of the processing chamber is pressurized in the fourth step. It is possible to suppress warping of the chip C due to heating and rapid cooling, and to suppress waviness of the wafer W accompanying a change in thermal stress. Therefore, in the third step, the substrate and the plurality of chips can be appropriately bonded by pressing the substrate and the plurality of chips with a predetermined pressure while maintaining the predetermined second temperature.

  The first temperature is preferably 150 ° C.

  The cooling of the substrate in the fourth step is preferably performed at a predetermined cooling rate or less.

  In the first step to the fifth step, a substrate is placed on a mounting table provided with a heating mechanism, and in the first step, the temperature of the heating mechanism is maintained below the first temperature. In the second step, the temperature of the heating mechanism is increased to the second temperature, and in the third step, the temperature of the heating mechanism is maintained at the second temperature, and the fourth step. The temperature of the heating mechanism may be lowered to the third temperature.

  The processing chamber is provided with a mounting table for mounting the substrate, a heating mechanism provided on the mounting table, and a delivery mechanism for delivering the substrate to the mounting table, wherein the first step In the fifth step, the temperature of the heating mechanism is maintained at the second temperature, and in the first step, the substrate is held away from the mounting table by the delivery mechanism, and the substrate is The first temperature is maintained below, and in the second step, the substrate is transferred from the transfer mechanism to the mounting table and placed on the mounting table, the substrate is heated to the second temperature, and the third step includes The substrate is placed on the mounting table, and in the fourth step, the substrate is held away from the mounting table by the delivery mechanism to cool the substrate to the third temperature. May be. In such a case, in the first step, pressurization inside the processing chamber may be performed stepwise.

  According to another aspect of the present invention, there is provided a program that operates on a computer of a control unit that controls the joining device so that the joining method is executed by the joining device.

  According to another aspect of the present invention, a readable computer storage medium storing the program is provided.

  According to another aspect of the present invention, there is provided a bonding apparatus for bonding a plurality of chips arranged on a substrate to the substrate, the processing chamber storing the substrate, and heating the substrate stored in the processing chamber. A heating mechanism, a gas supply mechanism for supplying and pressurizing pressurized gas to the inside of the processing chamber, an exhaust mechanism for exhausting and decompressing the inside of the processing chamber, the heating mechanism, the gas supply mechanism, and the And a control unit that controls the operation of the exhaust mechanism, and the control unit controls the inside of the process chamber that is hermetically sealed and the substrate is at a temperature equal to or lower than the first temperature. A first step of pressurizing to a predetermined pressure higher than atmospheric pressure, a second step of heating the substrate to a second temperature higher than the first temperature, and then the interior of the processing chamber in the process chamber. A third step of maintaining a constant pressure and maintaining the substrate at the second temperature to bond the substrate and the plurality of chips, and then bringing the substrate to a third temperature lower than the second temperature. A fourth step of cooling and thereafter a fifth step of reducing the pressure inside the processing chamber to atmospheric pressure are performed.

  The first temperature is preferably 150 ° C.

  It is preferable that the substrate is cooled in the fourth step at a predetermined cooling rate or less under the control of the control unit.

  The bonding apparatus is further provided in the processing chamber and further includes a mounting table on which the substrate is mounted. The heating mechanism is provided in the mounting table, and the control unit controls the first process. The fifth step is performed in a state where the substrate is placed on the mounting table. In the first step, the temperature of the heating mechanism is maintained below the first temperature, and in the second step The temperature of the heating mechanism is raised to the second temperature, the temperature of the heating mechanism is maintained at the second temperature in the third step, and the temperature of the heating mechanism is maintained in the fourth step. May be lowered to the third temperature.

  The bonding apparatus further includes a mounting table on which the substrate is mounted and a delivery mechanism that delivers the substrate to the mounting table, and the heating mechanism is provided on the mounting table. The control unit further controls the operation of the delivery mechanism, and maintains the temperature of the heating mechanism at the second temperature in the first to fifth steps by the control of the control unit, In the first step, the substrate is held away from the mounting table by the delivery mechanism to maintain the substrate below the first temperature, and in the second step, the mounting mechanism is moved from the delivery mechanism to the mounting table. The substrate is delivered and placed, the substrate is heated to the second temperature, and the third step is performed in a state where the substrate is placed on the placing table, and in the fourth step, The substrate is placed on the mounting table by the delivery mechanism. Et spaced and held, may be cooled substrate to said third temperature. In such a case, pressurization of the inside of the processing chamber in the first step may be performed stepwise under the control of the control unit.

  Another aspect of the present invention is a bonding system including the bonding apparatus, including the bonding apparatus and a temperature adjustment apparatus that adjusts the temperature of a substrate on which a plurality of chips are bonded by the bonding apparatus. It has a processing station and a loading / unloading station that can hold a plurality of substrates and loads / unloads the substrates to / from the processing station.

  According to the present invention, a plurality of chips arranged on a substrate can be appropriately bonded to the substrate.

It is a top view which shows the outline of a structure of the joining system concerning this Embodiment. It is a side view which shows the outline of the internal structure of the joining system concerning this Embodiment. It is a perspective view of a wafer and a plurality of chips. It is a side view of a wafer and a plurality of chips. It is a longitudinal cross-sectional view which shows the outline of a structure of a joining apparatus. It is a top view which shows the outline of a structure of a joining apparatus. It is a longitudinal cross-sectional view which shows the outline of the internal structure of a processing chamber. It is a flowchart which shows the main processes of the joining process concerning 1st Embodiment. It is explanatory drawing which shows the internal pressure of a process chamber, the temperature of a heating mechanism, and the temperature of a wafer in each process of the joining process concerning 1st Embodiment. It is explanatory drawing which shows the state of the wafer in each process of the joining process concerning 1st Embodiment. It is explanatory drawing of joining operation | movement by a joining apparatus. It is explanatory drawing of joining operation | movement by a joining apparatus. It is explanatory drawing of joining operation | movement by a joining apparatus. It is explanatory drawing of joining operation | movement by a joining apparatus. It is a flowchart which shows the main processes of the joining process concerning 2nd Embodiment. It is explanatory drawing which shows the internal pressure of a process chamber, the temperature of a heating mechanism, and the temperature of a wafer in each process of the joining process concerning 2nd Embodiment. It is explanatory drawing which shows the state of the wafer in each process of the joining process concerning 2nd Embodiment. It is explanatory drawing of joining operation | movement by a joining apparatus.

  Embodiments of the present invention will be described below with reference to the accompanying drawings. The present invention is not limited to the embodiments described below.

<1. Structure of joining system>
First, the configuration of the joining system according to the present embodiment will be described. FIG. 1 is a plan view illustrating the outline of the configuration of the joining system 1. FIG. 2 is a side view illustrating the outline of the internal configuration of the joining system 1. In the following, in order to clarify the positional relationship, the X-axis direction, the Y-axis direction, and the Z-axis direction that are orthogonal to each other are defined, and the positive direction of the Z-axis is the vertically upward direction.

  In the bonding system 1, a wafer W as a substrate and a plurality of chips C are bonded as shown in FIGS. The wafer W is a semiconductor wafer (device wafer) in which devices are formed on, for example, a silicon wafer or a compound semiconductor wafer. A plurality of bumps are formed on the surface of the wafer W. In addition, a plurality of bumps are formed on the surface of the chip C, and the chip C is arranged upside down so that the surface on which the plurality of bumps are formed faces the wafer W side. In other words, the surface of the wafer W on which the plurality of bumps are formed and the surface of the chip C on which the plurality of bumps are formed are arranged to face each other. The bumps on the wafer W and the chips C are formed at corresponding positions, and the bumps are bonded to bond the wafer W and the plurality of chips C together. The bump is made of, for example, copper. In this case, the bonding between the wafer W and the plurality of chips C is a bonding between copper and copper. In addition, pillars or pads made of, for example, copper may be formed on the surface of the wafer W or the chip C, and these pillars and pads may be connected.

  On the surface of the wafer W carried into the bonding system 1, a plurality of chips C are arranged in advance at predetermined positions. And the film F is affixed on the some chip | tip C, and the position of the some chip | tip C with respect to the wafer W is being fixed. The means for fixing the plurality of chips C to the wafer W is not limited to the film F, and any means such as coating can be used.

  As shown in FIG. 1, for example, the bonding system 1 is used for a loading / unloading station 2 where a cassette Cs capable of accommodating a plurality of wafers W is loaded / unloaded, and a wafer W loaded with a plurality of chips C. It has a configuration in which a processing station 3 including various processing devices for performing predetermined processing is integrally connected.

  The loading / unloading station 2 is provided with a cassette mounting table 10. The cassette mounting table 10 is provided with a plurality of, for example, two cassette mounting plates 11. The cassette mounting plates 11 are arranged in a line in the Y-axis direction (vertical direction in FIG. 1). The cassette Cs can be placed on these cassette placement plates 11 when the cassette Cs is carried into and out of the joining system 1. Thus, the carry-in / out station 2 is configured to be able to hold a plurality of wafers W. The number of cassette mounting plates 11 is not limited to the present embodiment, and can be arbitrarily determined.

  In the loading / unloading station 2, a wafer transfer unit 20 is provided adjacent to the cassette mounting table 10. The wafer transfer unit 20 is provided with a wafer transfer device 22 that is movable on a transfer path 21 extending in the Y-axis direction. The wafer transfer device 22 is also movable in the vertical direction and around the vertical axis (θ direction), a cassette Cs on each cassette mounting plate 11, a position adjusting device 32 and a transition device 33 of the processing station 3 described later, The wafer W can be transferred between the two.

  The processing station 3 is provided with a joining device 30, a temperature adjusting device 31, a position adjusting device 32, and a transition device 33. For example, a bonding device 30 is provided on the front side of the processing station 3 (Y-axis direction negative direction side in FIG. 1), and on the back side of the processing station 3 (Y-axis direction positive direction side in FIG. 1), the temperature is An adjusting device 31 is provided. Further, a position adjusting device 32 and a transition device 33 are provided on the loading / unloading station 2 side of the processing station 3 (the positive side in the X-axis direction in FIG. 1). As shown in FIG. 2, the position adjusting device 32 and the transition device 33 are provided in two stages in this order from the top. The number and arrangement of the joining device 30, the temperature adjusting device 31, the position adjusting device 32, and the transition device 33 can be arbitrarily set.

  The bonding apparatus 30 is an apparatus that bonds the wafer W and a plurality of chips C. The configuration of the joining device 30 will be described later.

  The temperature adjustment device 31 is a device that adjusts the temperature of the wafer W heated by the bonding device 30. The temperature adjustment device 31 includes a cooling member such as a Peltier element, and includes a temperature adjustment plate (not shown) capable of adjusting the temperature.

  The position adjusting device 32 is a device that adjusts the orientation of the wafer W in the circumferential direction. The position adjusting device 32 has a chuck (not shown) for rotating and holding the wafer W and a detection unit (not shown) for detecting the position of the notch portion of the wafer W. In the position adjustment device 32, the position of the notch portion of the wafer W is detected by the detection unit while the wafer W held by the chuck is rotated, thereby adjusting the position of the notch portion and the circumferential direction of the wafer W. The direction of is adjusted.

  The transition device 33 is a device for temporarily placing the wafer W thereon.

  As shown in FIG. 1, a wafer transfer area 40 is formed in an area surrounded by the bonding apparatus 30, the temperature adjustment apparatus 31, the position adjustment apparatus 32, and the transition apparatus 33. For example, a wafer transfer device 41 is disposed in the wafer transfer region 40.

  The wafer transfer device 41 has, for example, a transfer arm that is movable in the vertical direction, horizontal direction (X-axis direction, Y-axis direction), and around the vertical axis (θ direction). The wafer transfer device 41 moves in the wafer transfer region 40 and can transfer the wafer W to the surrounding bonding device 30, temperature adjustment device 31, position adjustment device 32, and transition device 33.

  The above joining system 1 is provided with a control unit 50. The control unit 50 is, for example, a computer and has a program storage unit (not shown). The program storage unit stores a program for controlling the bonding process between the wafer W and the plurality of chips C in the bonding system 1. The program storage unit also stores a program for controlling the operation of drive systems such as the above-described various processing apparatuses and transfer apparatuses to realize the below-described joining process in the joining system 1. The program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), or a memory card. May have been installed in the control unit 50 from the storage medium H.

<2. Structure of joining device>
Next, the structure of the joining apparatus 30 mentioned above is demonstrated. FIG. 5 is a longitudinal sectional view showing an outline of the configuration of the bonding apparatus 30. FIG. 6 is a plan view illustrating the outline of the configuration of the bonding apparatus 30.

  As shown in FIG. 5, the bonding apparatus 30 includes a processing chamber 100 that can seal the inside. The processing chamber 100 has an upper chamber 101 and a lower chamber 102. The upper chamber 101 is provided above the lower chamber 102.

  As shown in FIG. 7, the upper chamber 101 has a hollow structure in which the inside of the lower surface is opened. On the lower surface of the upper chamber 101, a sealing material 103 for maintaining the airtightness inside the processing chamber 100 is provided in an annular shape. The seal material 103 is provided so as to protrude from the lower surface of the upper chamber 101. The lower chamber 102 has a hollow structure in which the inner side of the upper surface and the inner side of the lower surface are opened. The lower surface of the upper chamber 101 and the upper surface of the lower chamber 102 are arranged to face each other. Then, by bringing the sealing material 103 and the upper surface of the lower chamber 102 into contact with each other, the inside of the processing chamber 100 is formed in a sealed space.

  As shown in FIG. 5, the upper chamber 101 is supported by an upper chamber base 110 provided on the upper surface of the upper chamber 101. The upper chamber base 110 has a larger diameter than the upper surface of the upper chamber 101.

  The upper chamber 101 has a tapered shape whose diameter increases concentrically from the upper side to the lower side, and the tapered portion has a convex shape inward in a side view. On the outer peripheral portion of the upper chamber 101, ribs 111 are provided at, for example, four locations between the upper chamber base 110 and the upper chamber base 110. In other words, the upper chamber 101 and the rib 111 are fixed and supported on the upper chamber base 110.

  Here, since the upper chamber 101 is supported by the central portion of the upper chamber base 110, for example, when the inside of the processing chamber 100 is pressurized, if there is no rib 111, stress is applied to the central portion of the upper chamber base 110. concentrate. In this regard, in the present embodiment, the internal pressure of the processing chamber 100 is distributed and transmitted to the central portion and the outer peripheral portion of the upper chamber base 110 via the upper chamber 101 and the rib 111. For this reason, it can suppress that stress concentrates on the specific location of the upper chamber base 110. FIG.

  An upper cooling mechanism 112 that cools the upper chamber base 110 is provided at the center of the upper surface of the upper chamber base 110. More specifically, a recess is formed in the center of the upper surface of the upper chamber base 110 in order to reduce the weight of the upper chamber base 110, and the upper cooling mechanism 112 is provided in the recess. A coolant channel (not shown) through which a cooling medium such as cooling water flows is formed inside the upper cooling mechanism 112. The upper cooling mechanism 112 is not limited to the present embodiment, and various configurations can be adopted as long as the upper chamber base 110 can be cooled. For example, the upper cooling mechanism 112 may incorporate a cooling member such as a Peltier element.

  The lower chamber 102 is supported by a lower chamber base 120 provided on the lower surface of the lower chamber 102. The lower chamber base 120 has a larger diameter than the lower surface of the lower chamber 102.

  A lower cooling mechanism 121 for cooling the lower chamber base 120 is provided at the center of the lower surface of the lower chamber base 120. A coolant channel (not shown) through which a cooling medium such as cooling water flows is formed inside the lower cooling mechanism 121. The lower cooling mechanism 121 is not limited to the present embodiment, and various configurations can be adopted as long as the lower chamber base 120 can be cooled. For example, the lower cooling mechanism 121 may incorporate a cooling member such as a Peltier element.

  The upper chamber base 110 is provided with a moving mechanism 130 that moves the upper chamber base 110, that is, the upper chamber 101 in the vertical direction. The moving mechanism 130 includes a shaft 131, a support plate 132, and a vertical moving unit 133. For example, four shafts 131 are provided on the outer periphery of the upper chamber base 110. Each shaft 131 extends in the vertical direction, passes through the lower chamber base 120, and is supported by a support plate 132 provided below the lower chamber base 120. The support plate 132 is provided with a vertical moving part 133 such as an air cylinder. The vertical moving unit 133 moves the support plate 132 and the shaft 131 in the vertical direction, and the upper chamber base 110 and the upper chamber 101 are configured to be movable in the vertical direction.

  The shaft 131 is provided with a lock mechanism 140 that restricts the movement of the shaft 131. As shown in FIG. 6, the lock mechanisms 140 are provided at, for example, four locations corresponding to the shaft 131. The lock mechanism 140 is provided on the lower chamber base 120.

  As shown in FIGS. 5 and 6, the lock mechanism 140 includes a lock pin 141, a horizontal moving part 142, and a casing 143. The lock pin 141 is inserted into a through hole formed in the shaft 131. At the base end portion of the lock pin 141, a horizontal moving portion 142 such as an air cylinder for moving the lock pin 141 in the horizontal direction is provided. A casing 143 that supports a lock pin 141 inserted in a through hole of the shaft 131 is provided on the outer peripheral surface of the shaft 131.

  As shown in FIG. 7, a mounting table 150 on which the wafer W is mounted is provided inside the processing chamber 100. A plurality of gap pins (not shown) are provided on the mounting table 150, and the plurality of gap pins support the wafer W. A plurality of guide pins (not shown) are provided on the mounting table 150, and the horizontal position of the wafer W is fixed by the plurality of guide pins. Inside the mounting table 150, a heating mechanism 151 for heating the wafer W is provided. For example, a heater is used as the heating mechanism 151. The mounting table 150 is divided into a plurality of regions, and the heating mechanism 151 may be divided into a plurality of regions so as to correspond to the divided regions. In such a case, the temperature of the plurality of regions in which the mounting table 150 is partitioned can be adjusted for each region.

  In the mounting table 150, through holes 152 penetrating in the thickness direction are formed at, for example, three locations. An elevating pin 160 described later is inserted into the through hole 152.

  A heat insulating plate (not shown) may be provided below the mounting table 150. With this heat insulating plate, it is possible to suppress the heat when the wafer W is heated by the heating mechanism 151 from being transmitted to the mounting table base 154 and the lower chamber base 120 described later.

  The mounting table 150 is supported by a mounting table base 154 provided below the mounting table 150 via a plurality of rods 153. The mounting table base 154 is mounted on the lower chamber base 120. Then, by providing an air layer between the mounting table 150 and the mounting table base 154 in this way, heat when the wafer W is heated by the heating mechanism 151 is transmitted to the mounting table base 154 and the lower chamber base 120. Can be suppressed.

  The mounting table base 154 has through holes 155 penetrating in the thickness direction, for example, at three locations. An elevating pin 160 described later is inserted into the through hole 155.

  The mounting table base 154 is not fixed to the lower chamber base 120. In such a case, for example, even if the inside of the processing chamber 100 is heated during the bonding process, the mounting base 154 can be freely thermally expanded, and thermal stress and deflection that can be generated by fixing can be suppressed. .

  As shown in FIG. 5, below the mounting table 150, for example, three raising / lowering pins 160 for supporting the wafer W from below and raising / lowering it are provided. The lift pins 160 are supported by a support plate 161 provided below the lower cooling mechanism 121 through the mounting table 150, the mounting table base 154, the lower chamber base 120, and the lower cooling mechanism 121. The support plate 161 is provided with an elevating drive unit 162 incorporating a motor or the like, for example. The lift drive unit 162 moves the support plate 161 and the lift pins 160 up and down, and the lift pins 160 can protrude from the upper surface of the mounting table 150. In this embodiment, the elevating pins 160, the support plate 161, and the elevating drive unit 162 constitute the delivery mechanism of the present invention.

  The processing chamber 100 is provided with a gas supply mechanism 170 that supplies pressurized gas into the processing chamber 100. The gas supply mechanism 170 includes a gas supply unit 171, a gas supply line 172, and a gas supply device 173. The gas supply unit 171 is provided above the mounting table 150 and supplies pressurized gas into the processing chamber 100. The gas supply unit 171 communicates with the gas supply device 173 via the gas supply line 172. The gas supply line 172 is provided through the upper chamber 101, the upper chamber base 110, and the upper cooling mechanism 112. The gas supply device 173 stores pressurized gas therein and supplies the pressurized gas to the gas supply unit 171.

  The processing chamber 100 is provided with an exhaust mechanism 180 that exhausts the inside of the processing chamber. The exhaust mechanism 180 includes an exhaust line 181 and an exhaust device 182. The exhaust line 181 is connected to exhaust ports formed at, for example, two locations on the upper surface of the lower chamber base 120, and is provided through the lower chamber base 120 and the lower cooling mechanism 121. The exhaust line 181 is connected to an exhaust device 182 such as a vacuum pump.

  The operation of each unit in the bonding apparatus 30 is controlled by the control unit 50 described above.

<3. Bonding method>
Next, a method for bonding the wafer W and the plurality of chips C performed using the bonding system 1 configured as described above will be described. Hereinafter, two embodiments will be described as such a bonding processing method. In the following two embodiments, a plurality of chips C are previously arranged at predetermined positions on the surface of the wafer W carried into the bonding system 1 as shown in FIG. 3 and FIG. Thus, the positions of the plurality of chips C are fixed.

<3-1. First Embodiment>
A joining process according to the first embodiment will be described. FIG. 8 is a flowchart showing an example of main steps of the joining process. FIG. 9 is an explanatory diagram showing the internal pressure of the processing chamber 100, the temperature of the heating mechanism 151 (mounting table 150), and the temperature of the wafer W in each step of the bonding process. FIG. 10 is an explanatory diagram showing the state of the wafer W in each step of the bonding process. Through the joining process (steps A1 to A8 described later), the temperature of the upper cooling mechanism 112 and the temperature of the lower cooling mechanism 121 are maintained at room temperature, for example, 25 ° C., and the upper chamber base 110 and the lower chamber base 120 are respectively It is cooled.

  First, a cassette Cs containing a plurality of wafers W is placed on a predetermined cassette placement plate 11 in the carry-in / out station 2. Thereafter, the wafer W in the cassette Cs is taken out by the wafer transfer device 22 and transferred to the position adjusting device 32 of the processing station 3. In the position adjusting device 32, the circumferential direction of the wafer W is adjusted by adjusting the position of the notch portion of the wafer W. By adjusting the circumferential direction of the wafer W in this way, for example, when a defect occurs in the bonding process in steps A1 to A8 described later, it becomes easier to identify the cause of the defect by following the wafer history, and the conditions of the bonding process Can be improved.

  Thereafter, in the bonding apparatus 30, the upper chamber 101 is moved upward by the moving mechanism 130 as shown in FIG. 11, and the processing chamber 100 is opened. Then, the wafer W is carried into the processing chamber 100 by the wafer transfer device 41 and transferred to the lift pins 160 that have been lifted and waited in advance. At this time, the temperature of the wafer W is normal temperature, for example, 25 ° C.

  Subsequently, as shown in FIG. 12, the upper chamber 101 is moved downward by the moving mechanism 130, and the processing chamber 100 is closed. At this time, the sealing material 103 and the upper surface of the lower chamber 102 are brought into contact with each other to seal the inside of the processing chamber 100 (step A1 in FIG. 8, FIG. 10A). At this time, the inside of the processing chamber 100 is at an atmospheric pressure that is the first pressure P1, for example, 0.1 MPa.

  Thereafter, as shown in FIG. 13, the lift pins 160 are lowered by the lift drive unit 162, and the wafer W is mounted on the mounting table 150 (step A <b> 2 in FIG. 8, FIG. 10B). At this time, the temperature of the heating mechanism 151 is a normal temperature that is the first temperature T1. That is, even when the wafer W is placed on the placement table 150, the temperature of the wafer W is maintained at room temperature.

  Thereafter, as shown in FIG. 14, a pressurized gas is supplied from the gas supply unit 171 to the inside of the processing chamber 100, and the inside of the processing chamber 100 is pressurized to a second pressure P2, for example, 0.9 MPa (see FIG. 8). Step A3, FIG. 10 (c)). This pressurization may be performed at a constant pressurization speed, for example, or may be performed stepwise by repeatedly maintaining the pressure for a predetermined time and increasing the pressure. Further, this pressurization control may be performed, for example, by adjusting the opening of a valve (not shown) provided in the gas supply line 172, or an electropneumatic regulator provided in the gas supply line 172. You may carry out by controlling (not shown).

  When pressurizing the inside of the processing chamber 100 in this step A3, the temperature of the wafer W is maintained at room temperature. For this reason, it can suppress that the bump of wafer W and chip C oxidizes.

  For example, if the first temperature T1 is 150 ° C. and the wafer W is equal to or lower than the first temperature T1, oxidation of the bumps can be suppressed. That is, generally, when the temperature exceeds 150 ° C., the oxidation rate of copper rapidly increases. In other words, since the oxidation rate of copper is low at 150 ° C. or less, if the wafer W is 150 ° C. or less, the oxidation of bumps is performed. It can be sufficiently suppressed. However, since the oxidation changes depending on the state around the bump and the area where the bump is exposed to air, it is more preferable to maintain the wafer W at room temperature as in the present embodiment in order to avoid such influence. .

  Thereafter, the temperature of the heating mechanism 151 is raised to a second temperature T2, for example, 200 ° C. to 270 ° C., and the wafer W is heated to the second temperature T2 (step A4 in FIG. 8, FIG. 10C). At this time, the heating rate of the wafer W is set to 13 ° C./sec or less, for example. Here, when the wafer W is rapidly heated, the chip C may be warped, but the warpage of the chip C can be suppressed by gently heating the wafer W in this way. Further, since the inside of the processing chamber 100 is at the second pressure P2, the chip C is pressed against the wafer W, further suppressing the warpage of the chip C and suppressing the undulation of the wafer W due to the change of thermal stress. Can do.

  In the present embodiment, the wafer W is heated in Step A4 after the inside of the processing chamber 100 reaches the second pressure P2 in Step A3. However, the inside of the processing chamber 100 is in the second pressure. Heating of the wafer W in step A4 may be started slightly before reaching P2.

  Then, the state in which the inside of the processing chamber 100 is maintained at the second pressure P2 and the wafer W is maintained at the second temperature T2 is continued for a predetermined time, for example, 30 minutes. Then, even if the height of the plurality of chips C on the wafer W varies, the plurality of chips C are pressed by the pressurized gas filled in the processing chamber 100, so that the wafer W and the plurality of chips C are Can be pressed uniformly at an appropriate pressure. Therefore, the wafer W and the plurality of chips C can be appropriately pressed while being heated to a predetermined temperature, and the wafer W and the plurality of chips C are appropriately bonded (steps A5 and 10 in FIG. 8). c)).

  Thereafter, the temperature of the heating mechanism 151 is lowered to a third temperature T3, for example, room temperature, and the wafer W is cooled to the third temperature T3 (step A6 in FIG. 8, FIG. 10C). At this time, the cooling rate of the wafer W is set to 1.5 ° C./sec or less, for example. Here, when the wafer W is rapidly cooled, the bonded chip C may be warped, but the warpage of the chip C can be suppressed by gently cooling the wafer W in this way. Further, since the inside of the processing chamber 100 is at the second pressure P2, the chip C is pressed against the wafer W, further suppressing the warpage of the chip C and suppressing the undulation of the wafer W due to the change of thermal stress. Can do. Note that the third temperature T3 is not necessarily a room temperature, and may be a low temperature, for example, 150 ° C. or less.

  Thereafter, the supply of the pressurized gas from the gas supply mechanism 170 is stopped, and the inside of the processing chamber 100 is decompressed by the exhaust mechanism 180 (step A7 in FIG. 8, FIG. 10 (d)). Then, the inside of the processing chamber 100 is depressurized to the atmospheric pressure that is the first pressure P1, for example, 0.1 MPa. Note that this decompression may be performed at a constant decompression speed, for example, or may be performed stepwise by repeatedly maintaining the pressure for a predetermined time and decreasing the pressure. The pressure reduction control may be performed, for example, by adjusting the opening of a valve (not shown) provided in the gas supply line 172, or an electropneumatic regulator (provided in the gas supply line 172). You may carry out by controlling (not shown).

  When the inside of the processing chamber 100 is depressurized to the first pressure P1, the wafer W is raised to a predetermined delivery position by the lift pins 160. Further, the processing chamber 100 is opened by moving the upper chamber 101 upward by the moving mechanism 130. Thereafter, the wafer W is unloaded from the processing chamber 100 by the wafer transfer device 41 (step A8 in FIG. 8, FIG. 10E). When the wafer W is unloaded from the processing chamber 100, the processing chamber 100 is closed again.

  Thereafter, the wafer W is transferred to the transition device 33 by the wafer transfer device 41 and further transferred to the cassette Cs of the predetermined cassette mounting plate 11 by the wafer transfer device 22 of the loading / unloading station 2. The wafer W unloaded from the bonding apparatus 30 may be transferred to the temperature adjusting device 31 and temperature adjusted before being transferred to the transition device 33. In this way, the joining process of the series of wafers W and the plurality of chips C is completed.

  According to the above embodiment, in step A3, since the wafer W pressurizes the inside of the processing chamber 100 at a low temperature of the first temperature T1 (normal temperature), it is possible to suppress oxidation of bumps made of, for example, copper. can do. Further, in step A4, since the wafer W is gradually heated in a state where the inside of the processing chamber 100 is pressurized, the warpage of the chip C due to rapid heating is suppressed, and the undulation of the wafer W due to a change in thermal stress is also suppressed. can do. Similarly, in step A6, since the wafer W is gradually cooled while the inside of the processing chamber 100 is pressurized, warpage of the chip C and undulation of the wafer W can be suppressed. Therefore, in step A5, the wafer W and the plurality of chips C can be appropriately bonded by pressing the wafer W and the plurality of chips C with the second pressure P2 while maintaining the second temperature T2.

  In the bonding system 1, the loading / unloading station 2 can hold a plurality of wafers W, and the wafers W can be continuously transferred from the loading / unloading station 2 to the processing station 3. In addition, since the bonding system 1 includes the bonding device 30 and the temperature adjustment device 31, it is possible to sequentially bond the wafer W and the plurality of chips C by sequentially performing the above-described steps A1 to A8. In addition, while a predetermined process is performed in one bonding apparatus 30, another process can be performed in another temperature adjustment apparatus 31. That is, a plurality of wafers W can be processed in parallel within the bonding system 1. Therefore, the wafer W and the plurality of chips C can be bonded efficiently, and the throughput of the bonding process can be improved.

<3-2. Second Embodiment>
A joining process according to the second embodiment will be described. FIG. 15 is a flowchart showing an example of main steps of the joining process. FIG. 16 is an explanatory diagram showing the pressure inside the processing chamber 100, the temperature of the heating mechanism 151 (mounting table 150), and the temperature of the wafer W in each step of the bonding process. FIG. 17 is an explanatory diagram showing the state of the wafer W in each step of the bonding process.

  First, the wafer W is transferred from the loading / unloading station 2 to the position adjusting device 32, and the position of the notch portion of the wafer W is adjusted by the position adjusting device 32 to adjust the circumferential direction of the wafer W. Since the operation until the position adjustment of the wafer W is the same as that of the first embodiment, the description thereof is omitted.

  Thereafter, the wafer W is transferred to the bonding apparatus 30 by the wafer transfer apparatus 41. In the bonding apparatus 30, the temperature of the heating mechanism 151 is maintained at the second temperature T <b> 2, for example, 200 ° C. to 270 ° C. throughout the bonding process (steps B1 to B7 described later). Through the bonding process, the temperature of the upper cooling mechanism 112 and the temperature of the lower cooling mechanism 121 are maintained at room temperature, for example, 25 ° C., and the upper chamber base 110 and the lower chamber base 120 are cooled.

  In the bonding apparatus 30, the upper chamber 101 is moved upward by the moving mechanism 130 as shown in FIG. 11, and the processing chamber 100 is opened. Then, the wafer W is carried into the processing chamber 100 by the wafer transfer device 41 and transferred to the lift pins 160 that have been lifted and waited in advance. At this time, the temperature T0 of the wafer W is normal temperature, for example, 25 ° C.

  Subsequently, as shown in FIG. 12, the upper chamber 101 is moved downward by the moving mechanism 130, and the processing chamber 100 is closed. At this time, the sealing material 103 and the upper surface of the lower chamber 102 are brought into contact with each other to seal the inside of the processing chamber 100 (step B1 in FIG. 15 and FIG. 16A). At this time, the inside of the processing chamber 100 is at an atmospheric pressure that is the first pressure P1, for example, 0.1 MPa.

  Thereafter, as shown in FIG. 18, the second inside of the processing chamber 100 is stepwisely moved in a state where the raising / lowering pins 160 are not lowered and the wafer W is held above the mounting table 150 by the raising / lowering pins 160. The pressure is increased to a pressure P2, for example, 0.9 MPa (step B2 in FIG. 15, FIG. 16B).

  Specifically, in step B2, a pressurized gas is supplied stepwise from the gas supply unit 171 to the inside of the processing chamber 100, the pressure is maintained and increased for a predetermined time, and the inside of the processing chamber 100 is stepped. Pressurize. This pressurization control may be performed, for example, by adjusting the opening of a valve (not shown) provided in the gas supply line 172, or an electropneumatic regulator provided in the gas supply line 172 (see FIG. You may carry out by controlling (not shown).

  Here, when the high-speed pressurized gas is supplied and rapidly pressurized, the wafer W is held by the lift pins 160, so the high-speed pressurized gas collides with the wafer W and the lift pins 160. The position of the wafer W in the horizontal direction is shifted. In this regard, when the pressure is increased stepwise as in the present embodiment, the flow rate of the pressurized gas is reduced, so that even if the pressurized gas collides with the wafer W, positional deviation of the wafer W can be suppressed. . In order to suppress the positional deviation of the wafer W, the inside of the processing chamber 100 may be pressurized stepwise as in the present embodiment, or may be pressurized at a constant low speed.

  In step B2, the wafer W is held by the lift pins 160. However, since the atmosphere inside the processing chamber 100 is heated by the heating mechanism 151, the wafer W is indirectly heated. However, since the wafer W is separated from the mounting table 150 (heating mechanism 151), it does not reach the first temperature T1, for example, 150 ° C. or higher. Thus, when pressurizing the inside of the processing chamber 100, the wafer W is maintained at the first temperature T1 or lower, so that oxidation of the bumps can be suppressed. That is, generally, when the temperature exceeds 150 ° C., the oxidation rate of copper rapidly increases. In other words, since the oxidation rate of copper is slow at 150 ° C. or less, if the wafer W is 150 ° C. or less, the oxidation of the bumps is performed. It can be sufficiently suppressed.

  Further, when the wafer W is rapidly heated, the chip C may be warped. However, since the wafer W is heated at a moderate heating rate of, for example, 13 ° C./sec or less, the warpage of the chip C can be suppressed. Further, since the inside of the processing chamber 100 is at the second pressure P2, the chip C is pressed against the wafer W, further suppressing the warpage of the chip C and suppressing the undulation of the wafer W due to the change of thermal stress. Can do. The temperature adjustment of the wafer W may be controlled by adjusting the lowering speed of the lifting pins 160, or may be adjusted by lowering the lifting pins 160 in a stepwise manner.

  Thereafter, when the inside of the processing chamber 100 reaches the second pressure P2, the elevating pins 160 are lowered by the elevating drive unit 162, and the wafer W is mounted on the mounting table 150 as shown in FIG. Then, the wafer W is heated to the second temperature T2 (step B3 in FIG. 15, FIG. 16C). At this time, the heating rate of the wafer W is set to 13 ° C./sec or less, for example. If it does so, the curvature of the chip | tip C and the wave | undulation of the wafer W can be suppressed as mentioned above.

  Then, the state in which the inside of the processing chamber 100 is maintained at the second pressure P2 and the wafer W is maintained at the second temperature T2 is continued for a predetermined time, for example, 30 minutes. Then, even if the height of the plurality of chips C on the wafer W varies, the plurality of chips C are pressed by the pressurized gas filled in the processing chamber 100, so that the wafer W and the plurality of chips C are Can be pressed uniformly at an appropriate pressure. Therefore, the wafer W and the plurality of chips C can be appropriately pressed while being heated to a predetermined temperature, and the wafer W and the plurality of chips C are appropriately bonded (steps B4 and 16 in FIG. 15). c)).

  Thereafter, the wafer W is raised to the delivery position by the lift pins 160, and the wafer W is separated from the mounting table 150 (heating mechanism 151), thereby cooling the wafer W to a third temperature T3, for example, 150 ° C. (FIG. 15). Step B5, FIG. 16 (d)). Here, when the wafer W is rapidly cooled, the chip C may be warped. However, since the wafer W is heated at a moderate cooling rate of, for example, 1.5 ° C./sec or less, the warpage of the chip C can be suppressed. it can. Further, since the inside of the processing chamber 100 is at the second pressure P2, the chip C is pressed against the wafer W, further suppressing the warpage of the chip C and suppressing the undulation of the wafer W due to the change of thermal stress. Can do. The temperature adjustment of the wafer W may be controlled by adjusting the rising speed of the lifting pins 160 or may be adjusted by raising the lifting pins 160 stepwise.

  Thereafter, the supply of the pressurized gas from the gas supply mechanism 170 is stopped, and the inside of the processing chamber 100 is decompressed by the exhaust mechanism 180 (step B6 in FIG. 15, FIG. 16 (e)). Then, the inside of the processing chamber 100 is depressurized to the atmospheric pressure that is the first pressure P1, for example, 0.1 MPa. Note that this decompression may be performed at a constant decompression speed, for example, or may be performed stepwise by repeatedly maintaining the pressure for a predetermined time and decreasing the pressure. The pressure reduction control may be performed, for example, by adjusting the opening of a valve (not shown) provided in the gas supply line 172, or an electropneumatic regulator (provided in the gas supply line 172). You may carry out by controlling (not shown).

  When the inside of the processing chamber 100 is depressurized to the first pressure P1, the upper chamber 101 is moved upward by the moving mechanism 130, and the processing chamber 100 is opened. Thereafter, the wafer W is unloaded from the processing chamber 100 by the wafer transfer device 41 (step B7 in FIG. 15, FIG. 16E). When the wafer W is unloaded from the processing chamber 100, the processing chamber 100 is closed again.

  Thereafter, the wafer W is transferred to the temperature adjustment device 31 by the wafer transfer device 41. In the temperature adjusting device 31, the temperature of the wafer W is adjusted to room temperature, for example, 25 ° C.

  Thereafter, the wafer W is transferred to the transition device 33 by the wafer transfer device 41 and further transferred to the cassette Cs of the predetermined cassette mounting plate 11 by the wafer transfer device 22 of the loading / unloading station 2. In this way, the joining process of the series of wafers W and the plurality of chips C is completed.

  Also in this embodiment, it is possible to enjoy the same effects as those of the first embodiment described above. That is, in step B2, since the inside of the processing chamber 100 is pressurized while the wafer W is at a low temperature equal to or lower than the first temperature T1, it is possible to suppress oxidation of bumps made of, for example, copper. Further, in steps B2 and B3, since the wafer W is gradually heated while the inside of the processing chamber 100 is pressurized, the warpage of the chip C due to rapid heating is suppressed, and the waviness of the wafer W accompanying a change in thermal stress is suppressed. Can also be suppressed. Similarly, in step B5, since the wafer W is gradually cooled while the inside of the processing chamber 100 is pressurized, warpage of the chip C and undulation of the wafer W can be suppressed. Therefore, in step B4, the wafer W and the plurality of chips C can be appropriately bonded by pressing the wafer W and the plurality of chips C with the second pressure P2 while maintaining the second temperature T2.

<4. Other Embodiments>
In the above embodiment, in the joining apparatus 30, the moving mechanism 130 moves the upper chamber 101. However, the upper chamber 101 and the lower chamber 102 may be moved relatively. For example, the moving mechanism 130 may move the lower chamber 102, or may move both the upper chamber 101 and the lower chamber 102.

  Further, the processing chamber 100 is divided into the upper chamber 101 and the lower chamber 102 in the vertical direction, but may be divided in the horizontal direction.

  Further, the mounting table 150 merely mounts the wafer W, but the wafer W may be vacuum-sucked or the wafer W may be electrostatically chucked, for example.

  In the bonding process of the above embodiment, the second temperature T2 (200 ° C. to 270 ° C.) for heating the wafer W, the second pressure P2 (0.9 MPa) inside the processing chamber 100, the processing chamber 100 The pressurizing time (30 minutes) inside each is an example, and is arbitrarily set according to various conditions.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood.

DESCRIPTION OF SYMBOLS 1 Bonding system 2 Carrying in / out station 3 Processing station 30 Bonding apparatus 31 Temperature adjusting apparatus 32 Position adjusting apparatus 33 Transition apparatus 41 Wafer transfer apparatus 50 Control part 100 Processing chamber 150 Mounting stand 151 Heating mechanism 160 Lifting pin 161 Supporting plate 162 Lifting drive part 170 Gas supply mechanism 180 Exhaust mechanism C Chip F Film W Wafer

Claims (15)

A bonding method for bonding a plurality of chips arranged on a substrate to the substrate,
A first step of pressurizing the inside of the processing chamber to a predetermined pressure higher than atmospheric pressure while the substrate is at a temperature equal to or lower than the first temperature inside the sealed processing chamber;
A second step of heating the substrate to a second temperature higher than the first temperature;
Thereafter, a third step of bonding the substrate and the plurality of chips while maintaining the inside of the processing chamber at the predetermined pressure and maintaining the substrate at the second temperature;
A fourth step of cooling the substrate to a third temperature lower than the second temperature;
And a fifth step of depressurizing the inside of the processing chamber to atmospheric pressure. The bonding method according to claim 1, wherein the first temperature is 150 degrees Celsius. The bonding method according to claim 1, wherein the cooling of the substrate in the fourth step is performed at a predetermined cooling rate or less. In the first step to the fifth step, a substrate is placed on a placement table provided with a heating mechanism,
In the first step, the temperature of the heating mechanism is maintained below the first temperature,
In the second step, the temperature of the heating mechanism is increased to the second temperature,
In the third step, the temperature of the heating mechanism is maintained at the second temperature,
The joining method according to claim 1, wherein in the fourth step, the temperature of the heating mechanism is lowered to the third temperature. Inside the processing chamber, a mounting table for mounting the substrate, a heating mechanism provided in the mounting table, and a delivery mechanism for delivering the substrate to the mounting table are provided,
In the first to fifth steps, the temperature of the heating mechanism is maintained at the second temperature,
In the first step, the substrate is held away from the mounting table by the delivery mechanism, and the substrate is maintained below the first temperature.
In the second step, the substrate is delivered and placed on the mounting table from the delivery mechanism, and the substrate is heated to the second temperature,
The third step is performed with the substrate placed on the mounting table.
The said 4th process WHEREIN: A board | substrate is spaced apart and hold | maintained from the said mounting base by the said delivery mechanism, and a board | substrate is cooled to said 3rd temperature, The any one of Claims 1-3 characterized by the above-mentioned. The joining method described in 1. The bonding method according to claim 5, wherein in the first step, pressurization inside the processing chamber is performed stepwise. The program which operate | moves on the computer of the control part which controls the said joining apparatus so that the joining method as described in any one of Claims 1-6 may be performed with a joining apparatus. A readable computer storage medium storing the program according to claim 7. A bonding apparatus for bonding a plurality of chips arranged on a substrate to the substrate,
A processing chamber containing a substrate;
A heating mechanism for heating a substrate housed in the processing chamber;
A gas supply mechanism for supplying a pressurized gas to the inside of the processing chamber to pressurize;
An exhaust mechanism for exhausting and depressurizing the interior of the processing chamber;
A controller that controls operations of the heating mechanism, the gas supply mechanism, and the exhaust mechanism,
A first step of pressurizing the inside of the processing chamber to a predetermined pressure higher than atmospheric pressure in a state where the substrate is at a temperature equal to or lower than the first temperature inside the sealed processing chamber under the control of the control unit; Thereafter, a second step of heating the substrate to a second temperature higher than the first temperature, and then maintaining the interior of the processing chamber at the predetermined pressure and maintaining the substrate at the second temperature. Then, a third step of bonding the substrate and a plurality of chips, a fourth step of cooling the substrate to a third temperature lower than the second temperature, and then increasing the inside of the processing chamber. And a fifth step of reducing the pressure to atmospheric pressure. The joining apparatus according to claim 9, wherein the first temperature is 150 degrees Celsius. The bonding apparatus according to claim 9 or 10, wherein the cooling of the substrate in the fourth step is performed at a predetermined cooling rate or less under the control of the control unit. Further comprising a mounting table provided inside the processing chamber for mounting a substrate;
The heating mechanism is provided on the mounting table,
Under the control of the control unit, the first to fifth steps are performed with the substrate placed on the mounting table, and in the first step, the temperature of the heating mechanism is changed to the first step. The temperature of the heating mechanism is raised to the second temperature in the second step, and the temperature of the heating mechanism is maintained at the second temperature in the third step. The joining apparatus according to claim 9, wherein in the fourth step, the temperature of the heating mechanism is lowered to the third temperature. A mounting table provided inside the processing chamber for mounting a substrate;
A delivery mechanism for delivering the substrate to the mounting table,
The heating mechanism is provided on the mounting table,
The control unit further controls the operation of the delivery mechanism,
Under the control of the control unit, the temperature of the heating mechanism is maintained at the second temperature in the first to fifth steps, and the substrate is described in the first step by the delivery mechanism. The substrate is held away from the mounting table to maintain the substrate below the first temperature, and in the second step, the substrate is transferred from the delivery mechanism to the mounting table and mounted, and the substrate is moved to the second temperature. The third step is performed with the substrate placed on the mounting table, and in the fourth step, the substrate is held away from the mounting table by the delivery mechanism. The bonding apparatus according to claim 9, wherein the substrate is cooled to the third temperature. The bonding apparatus according to claim 13, wherein pressurization of the inside of the processing chamber in the first step is performed in stages under the control of the control unit. A joining system comprising the joining device according to any one of claims 9 to 14,
A processing station comprising: the bonding apparatus; and a temperature adjustment apparatus that adjusts the temperature of a substrate on which a plurality of chips are bonded by the bonding apparatus;
A bonding system comprising: a plurality of substrates, and a loading / unloading station for loading / unloading the substrates to / from the processing station.

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