TWI827402B - Bonding head and bonding device including the bonding head - Google Patents

Abstract

A bonding head and a bonding device are provided. The bonding head includes: a base block; a heating block that is disposed above the base block and generates heat; and an antistatic block that is configured on the wafer in a manner that can absorb the wafer. above the heating block and configured to be electrically connected to a ground electrode to remove electrons remaining on the surface. Thereby, electrons remaining on the surface of the antistatic block can be effectively removed.

Description

Bonding head and bonding device including the bonding head

The present invention relates to a bonding head and a bonding device including the bonding head. In more detail, the present invention relates to a bonding head that picks up a wafer and bonds the wafer to a substrate and a bonding device including the bonding head.

Recently, in response to the demand for miniaturization of electronic components including semiconductor packages, a technology has been developed to form a stacked chip package by stacking a plurality of electronic components.

The stacked chip package is a semiconductor package in which a chip is stacked on a substrate and is formed by applying heat and pressure while the chip is in contact with the substrate. The stacked wafer package is formed from a bonding device.

The bonding device includes: a chuck structure that supports the substrate; and a bonding head that stacks the wafer on the substrate and heat-presses it. Specifically, the bonding head heats the wafer while the wafer is in close contact with the substrate to melt the bumps, and then cools again to bond the wafer to the substrate. At this time, the pads formed on the substrate and the bumps of the wafer may be electrically connected to each other. Thereby, the bonding process can be performed.

On the other hand, many electrons may remain on the surface of the bonding head during the execution of multiple processes performed before the bonding process.

In particular, when a bond head approaches a wafer, arcing may occur adjacent to the interface between the bond head and the wafer due to electrons remaining on the surface. The high voltage generated at this time causes damage to the wafer and causes wafer defects.

In addition, when the bonding head continuously picks up and transfers wafers, electrons may be abnormally filled on the surface of the bonding head in contact with the wafer, which may cause arcing. Therefore, it is necessary to directly transfer the wafer or remove electrons from the surface of the bonding head in contact.

The present invention provides a bonding head that can effectively eliminate electrons remaining on the surface.

The present invention provides a bonding device including a bonding head capable of effectively eliminating electrons remaining on a surface.

A bonding head according to an embodiment of the present invention includes: a base block, a heating block disposed above the base block and generating heat; and an antistatic block disposed above the heating block in a manner capable of absorbing wafers, and configured to be electrically connected to a ground electrode to remove electrons remaining on the surface.

In an embodiment of the present invention, the antistatic block may have a sheet resistance of less than 10 ohm/sq.

In an embodiment of the present invention, the antistatic block may include: an antistatic layer for vacuum adsorbing the wafer; and a seed layer between the heating block and the antistatic layer.

Wherein, the heating block includes aluminum nitride, the seed layer includes titanium nitride, and the antistatic layer includes at least one of noble metals including gold, platinum and silver.

On the other hand, the antistatic layer may be formed by a vacuum sputtering process using the seed layer.

In addition, the thickness of the seed layer may be in the range of 100Å to 500Å, and the thickness of the antistatic layer may be in the range of 1000Å to 3000Å. On the other hand, the antistatic layer may have a flatness of 1 μm or less and a surface roughness of 1 μm or less.

Wherein, the antistatic layer may be configured to cover the upper surface and side walls of the heating block.

On the other hand, the antistatic layer may include: a through hole that penetrates up and down and provides a vacuum flow path; and a vacuum groove that is connected to the through hole and formed on the upper surface of the antistatic layer.

In one embodiment of the present invention, the heating block includes: a heating plate in which a heating element that generates heat by externally applied power is disposed; and a cooling fin disposed at a lower portion of the heating plate, Used to cool the heating plate.

A bonding device according to an embodiment of the present invention includes: a chuck structure for supporting a wafer; and a bonding head movably disposed above the chuck structure and bonding the wafer to the wafer; the bonding head includes: a base block; a heating block that is disposed above the base block and generates heat; and an antistatic block that includes an antistatic layer and is configured on the heating block in a manner that can absorb the mold. The upper surface of the block and is configured to be electrically connected to a ground electrode to remove electrons remaining on the surface.

In an embodiment of the present invention, the antistatic block includes: an antistatic layer for vacuum adsorbing the wafer; and a seed layer between the heating block and the antistatic layer. Wherein, the heating block includes aluminum nitride, the seed layer includes titanium nitride, the antistatic layer includes at least one of noble metals, the noble metals include gold, platinum and silver, and the antistatic layer can be formed by The seed layer is formed using a vacuum sputtering process.

The bonding head according to the embodiment of the present invention includes an antistatic block, which can effectively remove electrons remaining on its surface, thereby effectively suppressing arc phenomena that may occur during the bonding process. Therefore, electric shock to the wafer during the bonding process can be suppressed.

On the other hand, the heating block includes cooling fins formed on the lower surface of the heating plate, so that the cooling fins are in contact with external cooling air through the heat dissipation space, thereby cooling the heating block to a specific temperature in a short period of time.

10:wafer

20:wafer

100: Bonding head

110: base block

112:First piece

114:Second block

116:Third block

120:Heating block

121:Heating plate

122: Heating element

123: Cooling fin

123a:Heating space

126: Vacuum line

127:Open your mouth

130: Antistatic block

131:Seed layer

132: Vacuum hole

132a:Through hole

132b: Vacuum tank

135: Antistatic layer

140: Cooling line

142: First cooling line

144: Second cooling line

150: Fastening components

200:Chuck structure

210:Heating plate

212: Heating element

214: Second vacuum line

215:Third vacuum line

216: Positioning pin

218: Groove

220:Chuck

222: The fourth vacuum line

222a: Vacuum tank

222b: Vacuum hole

223:Vacuum tank

224: Accommodation slot

226: Groove

230:Guide ring

232:Claw

240: Fixture

242: Fastening screw

244:Claw

250:Power cord

260:Temperature sensor

300: Bonding device

FIG. 1 is a cross-sectional view of a bonding head describing an embodiment of the present invention.

FIG. 2A is a cross-sectional view for describing the heating block and the antistatic block shown in FIG. 1 .

2B is a cross-sectional view for describing the fastening structure of the heating block and the antistatic block shown in FIG. 1 .

FIG. 3 is a cross-sectional view for describing the heating block shown in FIG. 2A.

FIG. 4 is a top view for describing the antistatic block shown in FIG. 2A.

FIG. 5 is a schematic structural diagram for describing a bonding device according to an embodiment of the present invention.

FIG. 6 is a top view of the chuck structure shown in FIG. 5 .

FIG. 7 is a top view for describing the chuck shown in FIG. 5 .

FIG. 8 is a bottom view for describing the chuck shown in FIG. 5 .

Hereinafter, the bonding head and the bonding device provided with the bonding head according to the embodiment of the present invention will be described in detail with reference to the accompanying drawings. Since the invention is susceptible to many variations and forms, specific embodiments thereof are illustrated in the drawings and described in detail herein. However, there is no intention to limit the invention to the specifically disclosed form, but it is intended to include all modifications, equivalents, and substitutions falling within the spirit and scope of the invention. In describing each drawing, the same reference numbers are used for the same elements. In the drawings, for the sake of clarity of the invention, the dimensions of structures are shown larger than actual.

Terms such as first, second, etc. may be used to describe various elements, but the elements should not be limited by the terms. The terms are used for the purpose of distinguishing one element from other elements only. For example, a first element could be named a second element, and similarly a second element could be named a first element, without departing from the scope of the claims of the present invention.

The terms used in the present invention are only used to describe specific embodiments and are not intended to limit the present invention. A single form includes plural forms unless the context clearly dictates otherwise. In the present invention, terms such as "including" or "having" should be understood as specifying the presence of features, numbers, steps, actions, elements, parts or combinations thereof described in the specification without excluding one or more of the others in advance. The existence or additional possibility of a feature or number, step, action, element, component or combination thereof.

Unless otherwise defined, all terms including technical or scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms defined in commonly used dictionaries should be interpreted to have the same meaning as in the context of the relevant technology, and should not be interpreted as an ideal, excessively formal meaning unless they are not explicitly defined in the present invention.

1 is a cross-sectional view for describing a bonding head according to an embodiment of the present invention. FIG. 2A is a cross-sectional view for describing the heating block and the antistatic block shown in FIG. 1 . 2B is a cross-sectional view for describing the fastening structure of the heating block and the antistatic block shown in FIG. 1 . FIG. 3 is a cross-sectional view for describing the heating block shown in FIG. 2A. FIG. 4 is a top view for describing the antistatic block shown in FIG. 2A.

Referring to FIGS. 1 to 4 , a bonding head 100 according to an embodiment of the present invention includes a base block 110 , a heating block 120 and an antistatic block 130 .

The bonding head 100 is transferred while adsorbing the wafer 10 and bonded to the substrate (not shown). Although not shown, in order to transfer the wafer 10 , the bonding head 100 may include a driving part to enable horizontal movement, up and down movement, rotation, inversion, and the like.

The upper portion of the base block 110 has a flat surface. The base block 110 includes a first block 112 and a second block 114 .

The first block 112 is composed of metallic material. Examples of the metal material may include stainless steel materials.

The second block 114 is arranged above the first block 112 . The second block 114 may be constructed of a ceramic material that has a lower thermal conductivity than the heating block 120 .

Examples of the ceramic material may include aluminum oxide (Al ₂ O ₃ ). Thus, as the second block 114 has a material with a lower thermal conductivity than the heating block 120 , the second block 114 can inhibit heat transfer to the first block 112 by blocking the heat generated in the heating block 120 .

The heating block 120 is arranged above the base block 110 . Specifically, the heating block 120 is arranged above the second block 114 .

Referring again to FIG. 2A and FIG. 3 , the heating block 120 includes a heating plate 121 and a heating element 122 embedded in the heating plate.

The heating plate 121 may be made of a material having relatively excellent electrical insulation and thermal conductivity. For example, the heating plate 121 may be made of ceramic material. For example, the heating plate 121 may be aluminum nitride (AlN) material.

At this time, the heating plate 121 may have about 170W/m. Thermal conductivity above k. Therefore, as the heating plate 121 has excellent thermal conductivity, the wafer 10 can be quickly heated using the heat generated by the heating body 122 .

The heating element 122 may be made of metal material. The heating element 122 generates heat by a power source applied from the outside, and uses the heat to heat the wafer 10 adsorbed on the antistatic block 130 . For example, the heating block 120 may use the heat to melt bumps (not shown) formed on the lower surface of the wafer 10 . For example, the heating element 122 can instantly heat the wafer 10 to about 450° C. to melt the bumps of the wafer 10 .

On the other hand, the heating block 120 may further include cooling fins 123 formed on the lower surface of the heating plate 121 . The cooling fins 123 may have a shape protruding downward. In addition, the cooling fins 123 may be multiple and have a stripe shape. At this time, the plurality of cooling fins 123 may be arranged to be spaced apart from each other. The separated space between the plurality of cooling fins 123 may be defined as a heat dissipation space 123a.

Therefore, the cooling fins 123 can have excellent heat dissipation effect. That is to say, the cooling fins 123 are in contact with the external cooling air through the heat dissipation space 123a, so that the heating block 120 can be cooled to a specific temperature in a relatively short period of time.

The cooling fin may have a height of 2/3 or more relative to the width of the cooling fin. On the other hand, the distance between the cooling fins may be 1 mm or less, or 0.5 mm.

The heating block 120 has a vacuum line 126 extending to the upper surface for providing vacuum force.

The vacuum line 126 passes through the central portion of the heating block 120 above and below. In addition, the vacuum line 126 may also extend to the base block 110 . The vacuum line is connected to a vacuum pump (not shown), so that the antistatic block can vacuum-adsorb the wafer located on its upper surface.

On the other hand, the antistatic block 130 is arranged above the heating block 120 . The antistatic block 130 may be formed on the upper surface of the heating block 120 . The antistatic block 130 may be made of at least one material among noble metals including platinum and silver.

The antistatic block 130 is electrically connected to a ground electrode (not shown). The antistatic block is Configured to remove electrons remaining on the surface upon contact with the wafer. Therefore, the antistatic block 130 can suppress arc phenomena that may occur when in contact with the wafer.

The antistatic block 130 includes an antistatic layer 135 . The antistatic layer 135 may be electrically connected to a ground electrode to remove electrons remaining on its surface. In particular, the antistatic layer 135 can remove electrons remaining on the surface of the wafer when in contact with the wafer.

The antistatic layer 135 may include at least one of noble metals including gold, platinum, and silver. The antistatic layer 135 may have excellent sheet resistance of 10 ohm/sq or less.

Therefore, since the antistatic layer 135 is made of a noble metal material, electrons remaining on the surface of the antistatic layer 135 can be effectively removed when the antistatic layer 135 is connected to the ground electrode. As a result, the antistatic block 130 effectively suppresses arc phenomena that may occur during the thermal compression process, thereby suppressing electric shock to the wafer due to arc phenomena.

The antistatic block 130 may further include a seed layer 131 between the heating block 120 and the antistatic layer 135 .

Assume that when the heating block 120 is made of aluminum nitride material, and the antistatic layer 135 is made of at least one of the noble metals of gold, platinum and silver, it is made of at least one of the noble metals of gold, platinum and silver. , the antistatic layer 135 is directly formed on the heating block 120 without an intervening buffer layer, which may cause the problem of being easily peeled off from the heating block 120 .

Referring to FIG. 2B , a fastening member 150 for fastening the antistatic block 130 , the heating block 120 and the base block 110 to each other may also be configured.

For example, the fastening members 150 may include bolts. On the other hand, as the fastening member 150 is made of a conductive material such as metal, the antistatic block 130 may be electrically connected to the grounded base block 110 via the fastening member 150 . External electrical connections. Therefore, the antistatic block can remain electrically grounded.

According to an embodiment of the present invention, when the heating block 120 is made of aluminum nitride material, the seed layer 131 may be made of titanium nitride. With the heating block 120 and the seed layer 131 both configured Being a nitride-based material, the antistatic block 130 composed of the antistatic layer 135 and the seed layer 131 can be more firmly attached to the heating block 120 . Therefore, a problem may occur that the antistatic block 130 is easily peeled off from the heating block 120 .

The seed layer 131 is between the heating block 120 and the antistatic layer 135 . The seed layer 131 may be used as a seed film in a process for forming the antistatic layer 135 . That is to say, when the antistatic layer 135 is formed through a vacuum sputtering process, the antistatic layer 135 can be formed according to the lattice structure of the seed layer 131 . Therefore, the antistatic layer 135 formed by the vacuum sputtering process using the seed layer 131 can have excellent flatness.

That is to say, the flatness of the antistatic layer 135 can be effectively controlled through the vacuum sputtering process. At this time, the antistatic layer 135 may have a surface roughness of 1 μm or less. Therefore, the antistatic layer 135 effectively suppresses the arc phenomenon that may occur during the thermal compression process, thereby suppressing electric shock to the wafer due to the arc phenomenon.

In an embodiment of the present invention, the thickness of the seed layer 131 may be in the range of 100 to 500 Å, and the thickness of the antistatic layer 135 may be in the range of 1000 Å to 3000 Å.

When the antistatic layer 135 has a thickness of less than 1000 Å or greater than 3000 Å, as the antistatic layer 135 has a relatively rapidly increasing sheet resistance, the effect of suppressing the arc phenomenon rapidly decreases.

On the other hand, when the thickness of the seed layer 131 is less than 100 Å, the effect of the buffer layer is weakened, so the adhesion between the antistatic layer 135 and the heating block 120 is weakened, thereby causing the antistatic layer 135 to separate from the heating block 120 The phenomenon of peeling. Differently from this, when the thickness of the seed layer 131 exceeds 500 Å, peeling may occur inside the antistatic layer 135 .

In an embodiment of the present invention, the antistatic layer 135 may be configured to cover the upper surface and side walls of the heating block 120 .

The antistatic layer 135 completely covers the exposed area of the heating block 120 , thereby suppressing arcing that may occur at a location adjacent to the heating block 120 .

In one embodiment of the present invention, the antistatic layer 135 has vacuum holes 132 . Vacuum hole 132 Connect to vacuum line 126 of heating block 120 . Therefore, the antistatic layer 135 can absorb the wafer 10 through the vacuum force provided by the vacuum line 126 . On the other hand, the vacuum hole 132 may include a through hole 132a penetrating the antistatic block up and down and a vacuum groove 132b formed on the upper surface of the antistatic layer 135 and connected to the through hole 132a. The vacuum groove 132b may extend radially with the through hole 132a as the center.

On the other hand, in a state where the wafer 10 is fixed using the antistatic block 130 , the bonding head 100 can move to stack the wafer 10 above the wafer. Additionally, the wafer 10 can be pressed against the wafer using an antistatic block 130 .

The antistatic block 130 may be formed above the heating block 120 through a deposition process. At this time, an example of the deposition process may include a vacuum sputtering process using the seed layer 131 as a buffer layer.

Alternatively, the antistatic block 130 may be formed separately and secured to the heating block 120 .

In an embodiment of the present invention, the bonding head 100 further includes a cooling line 140 .

Cooling line 140 cools wafer 10 by cooling heating block 120 . As wafer 10 cools, the bumps of wafer 10 cool to form solder. At this time, the cooling air supplied through the cooling line 140 can cool the wafer 10 to about 100°C.

Specifically, cooling line 140 includes first cooling line 142 and second cooling line 144 .

The first cooling line 142 extends from the base block 110 to the upper surface of the second block 114 . Cooling fluid is provided to heating block 120 via first cooling line 142 . Examples of the cooling fluid may include air, gas. The cooling fluid is in direct contact with the heating block 120 to cool the heating block 120 .

The second cooling line 144 is disposed inside the first block 112 of the base block 110 and cools the first block 112 . As the first block 112 is cooled, the third block 116, the second block 114, and the heating block 120 may be cooled by heat conduction. Therefore, the second cooling line 144 may assist in cooling the heating block 120 .

The first cooling line 142 is used for primary cooling of the heating block 120 and the second cooling line 144 is used for auxiliary cooling. Therefore, the cooling line 140 can be used to quickly cool the heating block 120 . With heating block 120 Cooling, the solder may be formed by rapidly cooling the bumps of the wafer 10 fixed to the suction plate.

On the other hand, the heating block 120 has an opening 127 for partially exposing the cooling line 140 , in particular, the first cooling line 142 . For example, the opening 127 may pass through the upper and lower sides of the heating block 120 .

The opening 127 may selectively expose a portion of the plurality of first cooling lines 142 , or partially expose each first cooling line 142 , which extends to the upper surface of the base block 110 .

In particular, when the opening 127 selectively exposes a part of the plurality of first cooling lines 142, if the opening 127 is provided on one side of the heating block 120, the temperature distribution of the heating block 120 and the adsorption plate becomes uneven. Therefore, the quality of the solder formed on the wafer 10 may be reduced.

Therefore, when the opening 127 selectively exposes a part of the plurality of first cooling lines 142, the opening 127 may be symmetrically disposed with the center of the heating block 120 as a reference. In this case, the quality of the solder formed on the wafer 10 can be improved by making the temperature distribution between the heating block 120 and the adsorption plate relatively uniform.

In an embodiment of the present invention, the base block 110 further includes a third block 116 .

The third block 116 is disposed between the first block 112 and the second block 114 . The third block 116 acts as a buffer block to reduce heat transfer from the second block 114 to the first block 112 . The third block 116 may be composed of a ceramic material, an example of which may include alumina.

FIG. 5 is a schematic structural diagram for describing a bonding device according to an embodiment of the present invention. FIG. 6 is a top view of the chuck structure shown in FIG. 5 . FIG. 7 is a top view for describing the chuck shown in FIG. 5 . FIG. 8 is a bottom view for describing the chuck shown in FIG. 5 .

Referring to FIGS. 5 to 8 , a bonding device 300 according to an embodiment of the present invention includes a bonding head 100 and a chuck structure 200 .

The bonding head 100 is used to transfer the wafer 10 to the chuck structure 200 and bond to the wafer 20 , and includes a base block 110 , a heating block 120 and the antistatic block 130 . Although not shown, in order to transfer the wafer 10 , the bonding head 100 may be configured to move horizontally, move up and down, rotate, reverse, etc.

Since the bonding head 100 is basically the same as the bonding head 100 shown in FIGS. 1 to 4 , a detailed description of the bonding head 100 is omitted.

In addition, the bonding head 100 may be disposed with the suction plate facing downward to bond the wafer 10 and the wafer 20 .

The chuck structure 200 supports the wafer 20 . At this time, a circuit pattern can be formed on the wafer 20 .

The chuck structure 200 includes a heating plate 210, a chuck 220, a guide ring 230, a clamp 240, a power cord 250 and a temperature sensor 260.

The heating plate 210 has a substantially disk shape and contains a heating element 212 that generates heat by externally applied power.

The heating element 212 may be configured to form a predetermined pattern on the inner side of the heating plate 210 . Examples of the heating body 212 may include electrode layers, heating coils, and the like.

The heating plate 210 has a second vacuum line 214 and a third vacuum line 215 extending to the upper surface. The second vacuum line 214 and the third vacuum line 215 may respectively extend from a lower surface or a side surface of the heating plate 210 to the upper surface. The second vacuum line 214 is not connected to the third vacuum line 215 . The second vacuum line 214 is connected to a vacuum pump (not shown) and provides vacuum force for adsorbing the wafer 20 . The third vacuum line 215 is connected to a vacuum pump (not shown) and provides vacuum force for adsorbing the chuck 220 .

The heating plate 210 has positioning pins 216 on its upper surface. The positioning pins 216 are used to position the chuck 220 of the heating plate 210 and may be configured in plural numbers. The positioning pin 216 may be provided on an upper surface edge of the heating plate 210 .

Furthermore, the heating plate 210 has a groove 218 formed along the edge of the upper surface. The groove 218 can be used to secure the guide ring 230 .

The chuck 220 has a substantially disk shape and is placed above the heating plate 210 . The chuck 220 supports the wafer 20 on its upper surface.

The chuck 220 has the fourth vacuum line 222 connected to the second vacuum line 214 to absorb the wafer 20 .

The fourth vacuum line 222 has a vacuum groove 222a and a plurality of vacuum holes 222b.

The vacuum groove 222a is formed on the lower surface of the chuck 220. For example, the vacuum groove 222a may have a shape that is a combination of grooves having a concentric circular shape based on the center of the lower surface of the chuck 220 and grooves extending radially, or may have a circular groove shape. At this time, the vacuum groove 222a does not extend to the edge of the lower surface of the chuck 220 to prevent leakage of the vacuum force.

The chuck 220 is placed above the heating plate 210, and the vacuum groove 222a is defined by the upper surface of the heating plate 210 to form a space. In addition, the vacuum groove 222a is connected to the second vacuum line 214 .

The vacuum hole 222b penetrates the chuck 220 and extends from the lower surface where the vacuum groove 222a is formed to the upper surface of the chuck 220. The vacuum holes 222b are arranged at intervals from each other. For example, the vacuum holes 222b may be arranged in a concentric circle shape or a radial shape.

Therefore, the fourth vacuum line 222 is connected to the second vacuum line 214 , and the wafer 20 is attracted by the vacuum force provided by the second vacuum line 214 .

On the other hand, the distance between the vacuum holes 222b located on the outermost layer of the chuck 220 may be set to be relatively narrower than the distance between the vacuum holes 222b located on the innermost layer of the outermost layer. Specifically, the angle between the vacuum holes 222b located in the outermost layer may be half of the angle between the vacuum holes 222b located inside the outermost layer. For example, the angle between the vacuum holes 222b located on the outermost layer may be about 15 degrees, and the angle between the vacuum holes 222b located inside the outermost layer may be about 30 degrees.

Therefore, the vacuum force through the vacuum hole 222b can be stably provided even at the edge of the chuck 220. Therefore, the wafer 20 can be in close contact with the chuck 220 even at the edge of the chuck 220 , and the wafer 20 can be prevented from floating.

In addition, the chuck 220 has a vacuum groove 223 on its lower surface, so that the vacuum is adsorbed to The heating plate 210 and the vacuum groove 223 are configured to be connected to the third vacuum line 215 .

The vacuum groove 223 is formed on the lower surface of the chuck 220 . For example, the vacuum groove 223 may have a shape in which a groove having a concentric circular shape based on the center of the lower surface of the chuck 220 and a groove extending radially are combined, or may have a circular groove shape. At this time, the vacuum groove 223 does not extend to the edge of the lower surface of the chuck 220 to prevent leakage of the vacuum force.

The chuck 220 is placed above the heating plate 210, and the vacuum groove 223 is defined by the upper surface of the heating plate 210 to form a space. In addition, the vacuum groove 223 is connected to the third vacuum line 215 .

The vacuum groove 223 is connected to the third vacuum line 215 , and with the vacuum force provided by the third vacuum line 215 , the chuck 220 can be tightly attached and fixed to the top of the heating plate 210 . Therefore, by minimizing deformation or bending of the chuck 220 , the wafer 20 on the chuck 220 can be supported flatly.

The heating plate 210 and the chuck 220 can be kept in close contact by the vacuum force provided by the third vacuum line 215 and the vacuum groove 223 . Therefore, a separate fastening member for fastening the heating plate 210 and the chuck 220 is not required.

Furthermore, the heating plate 210 and the chuck 220 can be separated and replaced by releasing the vacuum force provided by the second vacuum line 214 and the third vacuum line 215 . Therefore, maintenance of the chuck structure 200 can be performed quickly.

On the other hand, when the upper surface of the heating plate 210 and the lower surface of the chuck 220 each have a flatness exceeding about 10 μm, a slight gap may exist between the heating plate 210 and the chuck 220 . Therefore, the vacuum force may leak between the heating plate 210 and the chuck 220 .

The upper surface of the heating plate 210 and the lower surface of the chuck 220 each have a flatness of approximately 10 μm or less, preferably 7 μm or less. In this case, the heating plate 210 and the chuck 220 can be in close contact, and the vacuum force can be prevented from leaking between the heating plate 210 and the chuck 220 .

The chuck 220 transfers the heat generated at the heating plate 210 to the wafer 20 . At this time, the wafer 20 may be maintained at a temperature of approximately 140 to 150° C., so that bonding of a wafer (not shown) and the wafer 20 is easily achieved.

The heating plate 210 may be made of ceramic material. Examples of the ceramic material may include aluminum nitride (AlN). Since the aluminum nitride has high thermal conductivity, the heating plate 210 can uniformly transfer the heat generated in the heating element 212 . In addition, the heating plate 210 can uniformly heat the wafer 20 by making the temperature distribution of the chuck 220 uniform.

The chuck 220 may be constructed by adding titanium to a ceramic material. For example, in the chuck 220, titanium may be added to the aluminum oxide (Al ₂ O ₃ ). When titanium is added to the aluminum oxide (Al ₂ O ₃ ), the thermal conductivity of the chuck 220 can be further reduced.

When the thermal conductivity of the chuck 220 is less than about 5 W/m. k, the thermal conductivity of the chuck 220 is relatively low. Therefore, the heat generated at the heating plate 210 may not be sufficiently transferred to the wafer 20 , or it may take a long time to transfer the heat generated at the heating plate 210 to the wafer 20 . However, even if the bonding head heat-presses the wafer 20 and the wafer at a high temperature of about 450 degrees to bond the wafer, the chuck 220 can be prevented from being rapidly heated.

When the thermal conductivity of the chuck 220 exceeds approximately 20 W/m. k, the thermal conductivity of the chuck 220 is relatively high. Therefore, the heat generated at the heating plate 210 may be excessively transferred to the wafer 20 , so that the bumps between the wafer 20 and the wafer may be crushed. In addition, when the bonding head heat-presses the wafer 20 and the wafer at a high temperature of about 450 degrees, the chuck 220 is heated relatively quickly, so that the wafer 20 and the wafer are The bumps between the wafers may be crushed more easily.

When the thermal conductivity of the chuck 220 is about 5 to 20 W/m. k, the chuck 220 can appropriately transfer the heat generated in the hot plate 210 to the wafer 20 until the bumps are not crushed. In addition, even if the bonding head heat-presses the wafer 20 and the wafer at a high temperature of about 450 degrees to bond the wafer, the chuck 220 can be prevented from being rapidly heated. Therefore, the bumps between the wafer 20 and the wafer can be prevented from being crushed.

Therefore, even if the wafer 20 is frequently preheated for bonding the wafer 20 and the wafer, the bumps between the wafer 20 and the wafer can be prevented from being crushed. Therefore, bonding defects between the wafer 20 and the wafer can be prevented.

On the other hand, the chuck 220 may be composed only of aluminum oxide (Al ₂ O ₃ ) having a lower thermal conductivity than the aluminum nitride.

The chuck 220 has a receiving groove 224 for receiving the positioning pin 216 . The receiving groove 224 may be formed at a position corresponding to the positioning pin 216 of the heating plate 210 . For example, the receiving groove 224 can also be provided on the edge of the chuck 220 .

When the chuck 220 is disposed on the upper surface of the heating plate 210 , the positioning pin 216 of the heating plate 210 can be inserted into the receiving groove 224 of the chuck 220 . Therefore, the heating plate 210 and the chuck 220 can be accurately aligned.

Although it has been described above that the heating plate 210 is provided with the positioning pin 216 and the chuck 220 is formed with the receiving groove 224 , it is also possible that the heating plate 210 is provided with a receiving groove and the chuck is formed with a receiving groove 224 . 220 is equipped with chuck.

In addition, the chuck 220 has a groove 226 formed along the edge of the upper surface. Grooves 226 may be provided for the clamp 240 to be positioned.

The guide ring 230 is caught in the groove 218 formed along the edge of the upper surface of the heating plate 210 and guides the circumference of the heating plate 210 .

Specifically, the guide ring 230 has claws 232. When the claws 232 are stuck in the groove 218, the guide ring 230 is installed on the heating plate 210.

On the other hand, the upper surface of the guide ring 230 and the upper surface of the heating plate 210 may be located at the same height. In this case, in a state where the guide ring 230 is installed on the heating plate 210, the chuck 220 can be easily installed on the upper surface of the heating plate 210.

In addition, when the upper surface of the guide ring 230 is higher than the upper surface of the heating plate 210, the guide ring 230 can be used when the chuck 220 is installed on the upper surface of the heating plate 210. as a basis for arrangement.

The clamp 240 is fixed to the guide ring in a state of covering the upper surface edge of the chuck 220 . The clamp 240 may be fixed to the guide ring 230 by fastening screws 242 .

As an example, multiple clamps 240 may be configured to partially cover the upper surface edge of the chuck 220 . As another example, the clamp 240 is generally annular and can completely cover the upper surface edge of the chuck 220 .

Since the clamp 240 is fixed to the guide ring 230 in a state of covering the upper surface edge of the chuck 220 , the clamp 240 can press the chuck 220 downward. Therefore, the clamp 240 can tightly attach the chuck 220 to the heating plate 210 .

The clamp 240 has a claw 244 that can be placed in the groove 226 of the chuck 220 . Therefore, the upper surface of the clamp 240 and the upper surface of the chuck 220 may be located at the same height. Therefore, the wafer 20 may be positioned while the wafer 20 is stably transferred to the upper surface of the chuck 220 without interference from the clamp 240 .

The guide ring 230 and the clamp 240 may be made of a material with a lower thermal conductivity than the heating plate 210 . For example, the guide ring 230 and the clamp 240 may be made of aluminum oxide (Al ₂ O ₃ ) material. Furthermore, the guide ring 230 and the clamp 240 may be made of the same material as the chuck 220 .

Since the thermal conductivity of the guide ring 230 and the clamp 240 is lower than that of the heating plate 210 , the guide ring 230 and the clamp 240 can prevent heat from being lost through the sides of the heating plate 210 .

The power line 250 extends to the inside of the heating plate 210 and is connected to the heating element 212 to provide power for causing the heating element 212 to generate heat.

The temperature sensor 260 extends from the outside to the inside of the heating plate 210 and measures the temperature of the heating plate 210 heated by the heating element 212 . The temperature measured by the temperature sensor 260 may be used to control the temperature of the heating element 212 . The temperature of the heating plate 210 can be adjusted by controlling the temperature of the heating element 212 .

Examples of the temperature sensor 260 may include a thermocouple.

The chuck structure 200 transfers the heat generated on the heating plate 210 to the wafer 20 through the chuck 220 . The wafer 20 can be always heated at a constant temperature by the heat transferred by the chuck 220 . Therefore, the wafer 10 can be effectively bonded to the wafer 20 .

The bonding device 300 uses the chuck structure 200 to fix the wafer 20 and rapidly heats and cools the wafer 10 using the bonding head 100 while being heated at a constant temperature. The wafer 10 is bonded to the wafer 20 . Therefore, solder of excellent quality and good shape can be formed between the wafer 10 and the wafer 20 . In addition, the efficiency of the process of bonding the wafer 10 to the wafer 20 using the bonding device 300 can be improved.

As mentioned above, the bonding device according to the present invention effectively removes electrons remaining on the surface of the bonding head, thereby effectively suppressing arc phenomena that may occur during the bonding process. Therefore, electric shock to the wafer during the bonding process can be suppressed. Therefore, the efficiency and productivity of the bonding process using the bonding device can be improved.

Although the present invention has been described above with reference to the preferred embodiments, those of ordinary skill in the art will understand that the present invention can be modified within the scope of the ideas and fields of the invention described in the scope of the patent application. Various modifications and changes.

10:wafer

100: Bonding head

110: base block

112:First piece

114:Second block

116:Third block

120:Heating block

122: Heating element

126: Vacuum line

127:Open your mouth

130: Antistatic block

132: Vacuum hole

140: Cooling line

142: First cooling line

144: Second cooling line

Claims (11)

A bonding head including: base block; a heating block disposed above the base block and generating heat; and An antistatic block is arranged above the heating block in a manner capable of adsorbing the wafer, and is configured to be electrically connected to the ground electrode to remove electrons remaining on the surface, The antistatic block includes: an antistatic layer for vacuum adsorption of the wafer; and A seed layer is between the heating block and the antistatic layer. The bonding head according to claim 1, wherein the antistatic block has a sheet resistance of 10 ohm/sq or less. The bonding head according to claim 1, wherein the heating block contains aluminum nitride, The seed layer includes titanium nitride, The antistatic layer includes at least one of noble metals including gold, platinum and silver. The bonding head of claim 1, wherein the antistatic layer is formed by a vacuum sputtering process using the seed layer. The bonding head according to claim 1, wherein the thickness of the seed layer is in the range of 100Å to 500Å, The thickness of the antistatic layer ranges from 1000Å to 3000Å. The bonding head according to claim 1, wherein the antistatic layer has a flatness of less than 1 μm and a surface roughness of less than 1 μm. The bonding head according to claim 1, wherein the antistatic layer is configured to cover the upper surface and side walls of the heating block. The bonding head according to claim 1, wherein the antistatic layer includes: Through holes, which run through the top and bottom and provide vacuum flow paths; and A vacuum groove is connected to the through hole and formed on the upper surface of the antistatic layer. The bonding head according to claim 1, wherein the heating block includes: a heating plate internally provided with a heating element that generates heat by an externally applied power supply; and A cooling fin is arranged at the lower part of the heating plate and cools the heating plate. A bonding device including: A chuck structure to support the wafer; and a bonding head, movably disposed above the chuck structure, and bonding the wafer to the wafer, The bonding head includes: base block; a heating block disposed above the base block and generating heat; and An antistatic block, including an antistatic layer, is configured on the upper surface of the heating block in a manner capable of adsorbing the mold, and is configured to be electrically connected to the ground electrode to remove electrons remaining on the surface, The antistatic block includes: an antistatic layer for vacuum adsorption of the wafer; and A seed layer is between the heating block and the antistatic layer. The bonding device of claim 10, wherein the heating block contains aluminum nitride, the seed layer includes titanium nitride, and The antistatic layer includes at least one of noble metals including gold, platinum, and silver; The antistatic layer is formed by a vacuum sputtering process using the seed layer.