201202581 、發明說明： 【發明所屬之技術領域】 本發明關於一種設置於真空排氣道之真空排氣用 球閥及真空排氣裝置。 【先前技術】 進行半導體製造之真空處理裝置當例如使用石英 於處理氛圍時，為了防止急劇的應力施加在石英零件而 導致破損，會有從大氣氛圍首先進行緩慢排氣而減壓至 某個程度後，便進行通常排氣來將處理容器内抽真空之 情況。於是，便採用一種如圖18所示般，藉由緩慢排 氣用分流道103來將連接於處理容器100之排氣管101 的主閥（阻隔閥）102的上游側及下游側之間加以分流， 並於該分流道103設置有副閥104之結構。真空排氣 時，首先打開副閥104而進行緩慢排氣，接著關閉副閥 104、打開主閥102以一口氣地排氣至特定真空度。元 件符號105為真空幫浦，元件符號106為壓力調整部。 上述真空處理裝置舉例有使用石英管之批次(b atch) 式的縱型熱處理裝置或使用石英於載置台等之枚葉式 裝置等。然而，設置僅在例如真空排氣時使用之分流道 或副閥一事在成本上難以說是一個好的對策。因此，亦 已知有一種於使用伸縮型閥來作為主閥時，設定一可獲 得微量排氣用的開合度之位置，而利用主閥來進行緩慢 排氣之方法。 j ’伸縮型閥由於例如ο型環等密封組件會曝露 101内’ gj此不適合用在會產生很多副產物之 '辛主上述製知舉例有例如藉由cvD(chemical v叩〇Γ Deposition)法或仙⑷細㈣❹―)法等而 :保持在真，氛圍之處理容器内來對基板(例如半導體 日日圓’以下稱為晶圓）進行例如氧化給(腿2)等高介電率 膜(high-k膜）的成膜之成膜處理。 專，文獻1及2雖記載了於球體設置透孔來使水流 的聲音變小之球閥或供液態氫流通之球閥，但針對上述 課題則未有檢討。 專利文獻1 :日本特開平8-4917(圖8) 專利文獻2 :日本特開2005-133763(段落〇〇63) 【發明内容】 本發明係鑑於上述情事所發明者，其目的在於提供 -種可以簡單的結構來將排氣流量從小流量切換成大 "IL里之真空排氣用球閥及使用該球閥之真空排氣裝置。 本啦明之真空排氣用球閥，係設置於真空排氣道， 其特徵在於具備有：閥本體，係形成有吸氣埠與排氣埠 而構成閥室；球體組件，係可自由轉動地收納於該閥本 體内之閥體；貫穿道，係設置於該球體組件，而形成使 該吸軋崞與排氣埠相連通之氣體流道；轉動軸，係為了 開閉該吸氣埠與排氣埠之間而使該球體組件繞著與該 貫穿道呈直交之軸的周圍轉動；密封組件，係設置於該 201202581 排氣埠周緣’而將該球體組件與閥本體之間氣密地密 封；驅動部，係使該貫穿道的位置為τ述任—狀態 動該轉動軸來使吸氣埠與排氣埠之間相連通之全開狀 態；兩埠之間被阻隔之封閉狀態；以及該貫穿道的 係面臨吸氣埠及排轉—_開口部且該貫穿道的另 端係由吸轉及排氣埠另—儀開σ部隱藏之微小[Technical Field] The present invention relates to a vacuum exhaust ball valve and a vacuum exhaust device which are provided in a vacuum exhaust passage. [Prior Art] When a quartz processing device is used in a processing atmosphere, for example, when quartz is used in a processing atmosphere, damage is caused to prevent a sharp stress from being applied to the quartz component, and the air is first slowly decompressed from the atmosphere to a certain degree. Thereafter, the inside of the processing container is evacuated by usual evacuation. Then, as shown in Fig. 18, the upstream side and the downstream side of the main valve (blocking valve) 102 connected to the exhaust pipe 101 of the processing container 100 are connected by the slow exhausting bypass passage 103. The flow is branched, and the sub-valve 104 is provided with the structure of the sub-valve 104. In the vacuum evacuation, the sub-valve 104 is first opened to slowly exhaust, and then the sub-valve 104 is closed, and the main valve 102 is opened to exhaust to a specific degree of vacuum in one breath. The component symbol 105 is a vacuum pump, and the component symbol 106 is a pressure adjustment portion. The vacuum processing apparatus is exemplified by a batch type vertical heat treatment apparatus using a quartz tube or a leaf type apparatus using quartz on a mounting table or the like. However, it is difficult to say that it is a good countermeasure to set the bypass or the secondary valve which is used only for, for example, vacuum evacuation. Therefore, there is also known a method of slowly exhausting the main valve by using a main valve when a telescopic valve is used as the main valve. j 'The telescopic valve is exposed to 101 in the seal assembly such as the ο-ring. This is not suitable for use in the production of many by-products. For example, the cvD (chemical v叩〇Γ Deposition) method is used. Or (4) fine (four) ❹ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ ─ High-k film) film formation treatment. In addition, in the literatures 1 and 2, a ball valve in which a through hole is provided in a sphere to reduce the sound of a water flow or a ball valve through which a liquid hydrogen flows is described, but the above-mentioned subject is not reviewed. Patent Document 1: Japanese Patent Laid-Open No. Hei 8-4917 (Fig. 8) Patent Document 2: Japanese Patent Laid-Open No. 2005-133763 (paragraph 〇〇 63) SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object thereof is to provide The exhaust flow can be switched from a small flow rate to a large vacuum valve for vacuum exhaust in the IL and a vacuum exhaust device using the ball valve. The vacuum exhaust ball valve of the present invention is provided in a vacuum exhaust passage, and is characterized in that: a valve body is provided, and an intake dam and an exhaust port are formed to constitute a valve chamber; and the ball assembly is rotatably housed a valve body in the valve body; a through passage disposed in the ball assembly to form a gas flow passage for connecting the suction ram to the exhaust enthalpy; and a rotating shaft for opening and closing the suction vent and exhaust Between the turns, the ball assembly is rotated about a circumference orthogonal to the through-pass; the seal assembly is disposed at the periphery of the 201202581 exhaust weir to hermetically seal the ball assembly and the valve body; The driving portion is configured such that the position of the through-pass is a state in which the rotating shaft is connected to open the air intake port and the exhaust port; a closed state in which the two turns are blocked; and the through-opening The system of the road faces the inhalation sputum and the displacement - the opening and the other end of the through passage is hidden by the suction and exhaust 埠
C c 開放狀態；及微小連通道，係設置於該球體組件及閥本 體至少其中之-，而於上述微小開放狀 間隙來連通該貫穿道的另―端與吸氣埠及排氣埠另^ 側的開口部之間。 該微小連通道係貫穿貫穿道與球體組件的外面之 間之貫穿孔或形成於該閥本體的㈣面 小連通道触线置政 本=之真空排氣裝置的特徵在於具備有：真空排 於處理容器；該真空排氣用球 二及真空排氣機構’係連接 一本發明之球閥係於球體組件及閥本體至少JL中之 一，置有微錢料，额小賴 組件所設置之貫穿道之—婭後β6田Θ球體 側的開口部且4Γ 埠及排氣埠一 牙道的另一端係由吸氣埠及排氣埠 L部隱藏時，藉由微小間隙來 的開口部與貫穿道的玄^ 刀 可f μ 另—翊之間。於是，能充分對應於 又于^"、姐狀態之球體組件，而不須對球體組件的 201202581 仔止位置要求精度高的精確度。因此 來_、關閉及進行微小排氣之狀態。;：構; 缓,Ρ排氣鱗^ 便可以—_體來進行 緩r又排通•氣’在成本上為有利的。 【實施方式】 具備有本發明真空排氣 實施型態範例，係與_ ]又八二排虱裴置的 例來加以說明。首真空排氣裝置之成膜裂置為 的概略結構。該成加以說㈣成膜裝置 Deposits)法來對基板(半導體晶j °=(At細Layei 圓」)進行成膜處理之裴置，其曰以下稱為「晶 該處=:載置晶理容器1與於 之昇降軸2 a而連的==自2，容器丨的地面延伸 2b可在進行成膜處理之上苒此，並藉由該昇降機構 入之下方位置之間自由昇降。立置與進行晶圓W的搬出 從該，台2垂下有可相對於晶圓；2係於複數部位處 降地構成之昇降銷（圖中未顒 ❺載置面自由昇 藉由處理容器^的地面所設置之二:該下方位置處， 銷相對於晶圓W的载置面上 <得遞機構3來使該昇降 的搬送臂（圖中夫翻_、 上昇，而在該昇降銷與外部 台2係設置有用之曰間進行晶圓力的傳遞。該載置 4)，與自内面側靜電‘二，W之加熱機構(例如加熱器 吸附晶圓w #電夾具（圖中未顯 6 201202581 示）。該載置台2周圍係設置有覆蓋該載置台2而用以 抑制例如成膜氣體的附著之石英所構成的覆蓋體5。 又，上述昇降軸2a或處理容器1的内壁面亦設置有該 覆蓋體5。圖1中元件符號6係氣密地連接處理容器1 下面與昇降軸2a之間之伸縮管，元件符號11係藉由閘 閥（圖中未顯示）而被氣密地封閉之搬送口。此外，處理 容器1的地面側係形成有朝向昇降轴2a側喷出N2氣體 等吹淨氣體之供應道（圖中未顯示）。 處理容器1的頂面係設置有與載置台2呈對向，而 對該載置台2上的晶圓W供應處理氣體之氣體喷淋頭 7。該氣體喷淋頭7的上面侧係連接有分別供應成膜氣 體與氧化氣體之氣體供應道8a、8b，其中該成膜氣體係 用以使含給化合物吸附在晶圓W表面，而該氧化氣體 係用以使吸附在晶圓W上之成膜氣體氧化。為了使該 等成膜氣體及氧化氣體能夠被供應至處理容器1内而 不會在氣體喷淋頭7的内部區域相互混合，便形成有分 別的氣體流道。又，氣體喷淋頭7的上面係連接有可將 吹淨氣體(例如N2氣體)供應至處理容器1内之氣體供應 道8c的一端側，為了使該吹淨氣體能夠被供應至處理 容器1内而不會在氣體喷淋頭7内與該成膜氣體及氧化 氣體所構成的處理氣體相互混合，便構成了氣體流道。 又，該氣體供應道8a、8b係連接有為了將吹淨氣體供 應至成膜氣體及氧化氣體所流通之流道而連接於氣體 供應道8c的另一端側之吹淨氣體供應源（圖中未顯 7 201202581 示）。圖1中元件符號9係形成於氣體喷淋頭7下面的 複數部位處之氣體噴出孔，元件符號9a係從氣體喷淋 頭7對著晶圓W的周緣部遍佈圓周方向供應吹淨氣體 之供應口。 處理容器1側壁面處的氣體喷淋頭7與載置台2之 間的區域係於1個部位處設置有將該處理容器1内的氛 圍排除之排氣部21。從該排氣部21向處理容器1外側 延伸之真空排氣道(排氣管22)係介設有用以進行在該 排氣管22内被排氣之氣體的流量調整之例如APC(Auto Pressure Controller)等所構成的流量調整部23，與藉由 進行該排氣管22内之氣體流道的開閉而可切換處理容 益1内的真空減及該真空純的停止之本發明球閥 31 魏閥31向處理容II丨的相反側延伸之排氣管 接有真空排氣機構(真空幫浦24)。此圖1中的元 Π::;;?:將朝向排氣部21而從氣體喷淋頭7與晶 “、區域麵而來的氣體導人該排氣部Μ之排 孤隔扳。 閥31如圖2及圖二;圖二詳細說明該球閥該: 22 S2, W 9 π 下係具備有構成了沿者排氣, 該室之闕本體…與分別她 33及排氣埠34。 t态1側及真空幫浦24侧之吸氣 氣管22長度方向7等吸氣埠33及排氣埠34之位在4 空幫浦24 ^)之° 7上游側(處理容器1側)及下游侧（; 係分別形成凸緣部36、36 ’該等. 201202581 33、34之球閥31側的凸緣部36、36係藉由螺栓乃等 而於遍佈圓周方向之複數部位處分別固定於閥本體 3 2。又，該等吸氣埠3 3及排氣埠3 4係藉由例如箝位而 分別將排氣管22側的凸緣部36與排氣管22的端面所 形成之凸緣部22a氣密地連接於排氣管22。該閥本體 32係例如從上側插入有用以使後述球體組件41轉動之 轉動軸37的一端側，而該轉動軸37的另一端側則亦如 ( 圖3所示，係連接於使用氣壓缸之旋轉致動器（旋轉型 氣壓缸)所構成的驅動部38。藉由該等驅動部38、球閥 31、排氣管22及真空幫浦24構成了真空排氣裝置。 閥本體32的内部如圖4所示，係收納有藉由上述 ，動軸37而例如可繞鉛直軸周圍自由轉動地構成之略 呈球形的閥體(球體組件41)。該球體組件41與吸氣埠 33及排氣埠34之間為了分別從處理容器丨側及真空幫 浦=側支撐球體組件41，係分別配置有略呈環狀之例 C 如樹脂所構成的吸氣側支撐組件42及排氣侧支撐組件 該等吸氣側支撐組件42及排氣侧支撐組件43之球 租、’且件41的支撐面則如圖5所示，係沿著該球體組件 土的外圍面而凹陷成球面狀。又，球體組件41與排氣 埠^4之間為了將球體組件41遍佈排氣管周圍方向 而氣密地推壓至排氣側支撐組件43及排氣埠34，便配 f有例如0型環等所構成的密封組件44。排氣側支撐 =43如圖6所示，係形成有内周面被切割成環狀之 缺陷部43a ’以將該密封組件44收納於該缺陷部43a。 201202581 該等球體組件4卜魏财触件a、職側支撐組 件43及密封組件料係藉由氣密地連接於閥本體32而 相互壓接於吸氣埠33及排氣槔34。 接下來詳細敘述球體組件41。該球體組件41的上 面^® 8所示’係形成有嵌合形成為例如矩形之轉動轴 37前端部(下端部)之刻槽37a。藉由該轉動軸37來抵抗 以上述吸氣側支撐組件42、排氣側支撐組件43及密封 組件44來將球體組件41加以固定之固定力，以使該球 胆、、且件41繞著與後述貫穿道45呈直交之軸周圍（此範 例中為繞鉛直軸周圍）轉動。 又’該球體組件41係為了將處理容器1内的氛圍 從吸氣埠33側的吸氣口 33a真空排氣至排氣埠34側的 排氣口 34a，便直線狀地形成有貫穿内部而形成氣體流 道之貫穿道45。該貫穿道45的兩端部處之球體組件41 的端面被切割而形成該貫穿道45的開口部46 ^然後， 如後所述’藉由轉動軸37來使球體組件41在下述3種 狀態之間繞鉛直軸周圍轉動，3種狀態分別為透過貫穿 道45來將吸氣口 33a與排氣口 34a連通之全開狀態、 球體组件41的外壁面會對向於該等吸氣口 33a及排氣. 口 34a而將兩埠33、34之間阻隔之封閉狀態、以及貫 穿道45的一端係面臨排氣埠34的開口部且貫穿道45 的另一端係自吸氣埠33的開口部隱藏之微小開放狀 態。 亦即’當球體組件41從封閉狀態朝全開狀態轉動 201202581 時，如圖6及圖7所*，由於排氣側支樓組件43係形 成有用以收納密封組件44之缺陷部43a，因此在吸氣口 33a侧的開口部46面臨該吸氣口 33a之前，排氣口 3知 侧的開口部46便會透過該缺陷部43a而成為面臨排氣 口 34a(與排氣口 34a相連通)之狀態。將此時的球體組 件41的位置稱為上述微小開放狀態，於該微小開放狀 態下，吸氣口 33a側的開口部46會因吸氣側支撐組件 42而自吸氣口. 33a被氣密地區劃。此外，此處所謂「氣 密地區劃」亦包含有處理容器丨側的氛圍會自吸氣埠 33及吸氣侧支撐組件42與球體組件41之間的極小間 隙而被微量地排氣之情況。 該等吸氣側支撐組件42、排氣侧支撐組件43及密 封組件44如圖5所示，係配置為當轉動球體組件41來 使開口部46、46對向於吸氣口 33a及排氣口 34a時， 可於開口部46外圍緣處支撐球體組件41。此外，圖4 及圖7中省略描繪閥本體32，又，圖2中省略描繪上 述刻槽37a ° 又，2個開口部46當中之例如對向配置於吸氣口 33a侧之開口部46中，於使球體組件41從上述封閉狀 態轉動至全開狀態之方向（在此範例中為順時針方向） 上，自該開口部46分離部位處之球體組件41的外表面 如圖4及圖9所示，係於該球體組件41高度方向的略 中央位置處形成有氣體流通口 47。球體組件41的内部 係設置有從該氣體流通口 47朝向貫穿道45内壁面延 11 201202581 口面積係形成為較貫穿道45的 要小 (孔部)4δ以作為貫穿孔，該微小連通道48 ^J面所形成之氣體孔49中與貫穿道 連 道48在此範例中從上侧觀看球體組件41C c open state; and a micro-connecting channel is disposed at least in the ball assembly and the valve body, and communicates with the other end of the through-channel and the suction port and the exhaust port in the small open gap Between the openings on the side. The micro-connecting passage is a through-hole between the through-passage and the outer surface of the ball assembly or a (four)-faced small-connection channel of the valve body. The vacuum exhaust device is characterized by: vacuum discharge The processing container; the vacuum exhausting ball 2 and the vacuum exhausting mechanism are connected to a ball valve of the invention, which is one of the ball assembly and the valve body, at least one of the JL, and is provided with a micro-money material, which is disposed through the assembly of the small-sized component. The opening and the penetration of the opening of the ball on the side of the ball after the β6 field 且 且 且 且 且 且 且 且 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 隐藏 隐藏 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠 埠The Xuan ^ knife of the road can be f μ between the other. Therefore, it can fully correspond to the spherical component of the ^" sister state, without requiring high precision accuracy for the 201202581 position of the ball component. Therefore, _, close and carry out the state of micro exhaust. ;: structure; slow, Ρ exhaust scale ^ can be - _ body to slow and then pass through the gas - is economically beneficial. [Embodiment] An example of a vacuum evacuation embodiment of the present invention is provided, and an example of a _] and an eight-row arrangement is provided. The film formation of the first vacuum exhaust device is a rough structure. The formation method (4) film forming apparatus Deposits method is used to form a film on a substrate (semiconductor crystal j ° = (At fine Layei circle)), and the following is referred to as "crystal where == placement of crystallographic capacity" The device 1 is connected to the lifting shaft 2 a == from 2, and the floor extension 2b of the container 可 can be performed on the film forming process, and is freely raised and lowered by the lower position of the lifting mechanism. The wafer W is carried out, and the wafer 2 is suspended from the wafer; 2 is a lift pin formed at a plurality of locations (the unloaded surface is freely raised by the processing container) The ground is provided at the lower position: at the lower position, the pin is placed on the mounting surface of the wafer W. The delivery mechanism 3 causes the lifting and lowering arm (the figure is turned over, and the lifting pin and the lifting pin are The external table 2 is used to transfer the wafer force during the day. The mounting 4) and the self-internal side electrostatic 'two, W heating mechanism (such as the heater adsorption wafer w # electric fixture (not shown in the figure) 6 201202581. The periphery of the mounting table 2 is provided with a stone covering the mounting table 2 for suppressing adhesion of, for example, a film forming gas. The covering body 5 of the UK is also provided with the covering body 5 on the inner surface of the lifting shaft 2a or the processing container 1. The element symbol 6 in Fig. 1 is hermetically connected between the lower surface of the processing container 1 and the lifting shaft 2a. The telescopic tube, the component symbol 11 is a transport port that is hermetically sealed by a gate valve (not shown). Further, the ground side of the processing container 1 is formed by blowing N2 gas toward the side of the elevating shaft 2a. A gas supply path (not shown) is provided. The top surface of the processing container 1 is provided with a gas shower head 7 that faces the mounting table 2 and supplies a processing gas to the wafer W on the mounting table 2. The upper surface of the gas shower head 7 is connected with gas supply channels 8a, 8b for supplying a film forming gas and an oxidizing gas, respectively, wherein the film forming gas system is used to adsorb the compound to the surface of the wafer W, and the oxidizing gas It is used to oxidize the film forming gas adsorbed on the wafer W. In order to allow the film forming gas and the oxidizing gas to be supplied into the processing container 1 without being mixed in the inner region of the gas shower head 7, Formed separate gas flow paths. Again, gas The top surface of the shower head 7 is connected to one end side of a gas supply path 8c in which a purge gas (for example, N2 gas) can be supplied to the processing container 1, in order to enable the purge gas to be supplied into the processing container 1 without being supplied thereto. A gas flow path is formed in the gas shower head 7 by mixing with the processing gas formed by the film forming gas and the oxidizing gas. Further, the gas supply paths 8a and 8b are connected to supply the blowing gas to the gas. The flow path through which the film forming gas and the oxidizing gas flow is connected to the blowing gas supply source on the other end side of the gas supply path 8c (not shown in 201202581). The component symbol 9 in Fig. 1 is formed in the gas shower. A gas ejection hole at a plurality of portions below the head 7, and a component symbol 9a is a supply port for supplying a purge gas from the gas shower head 7 to the peripheral portion of the wafer W in the circumferential direction. An area between the gas shower head 7 at the side wall surface of the processing container 1 and the mounting table 2 is provided at one portion, and an exhaust portion 21 for eliminating the atmosphere in the processing container 1 is provided. The vacuum exhaust passage (exhaust pipe 22) extending from the exhaust portion 21 to the outside of the processing container 1 is provided with, for example, APC (Auto Pressure) for adjusting the flow rate of the gas exhausted in the exhaust pipe 22. The flow rate adjusting unit 23 configured by the controller and the like, and the opening and closing of the gas flow path in the exhaust pipe 22, can switch the vacuum in the processing capacity 1 and the vacuum valve to stop. The exhaust pipe of the valve 31 extending to the opposite side of the treatment volume II is connected to a vacuum exhaust mechanism (vacuum pump 24). The element Π in this FIG. 1 :: ; ; : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : 31 is shown in Fig. 2 and Fig. 2; Fig. 2 illustrates the ball valve in detail: 22 S2, W 9 π is provided with the exhaust of the lining, the main body of the chamber... and her 33 and exhaust 埠 34. On the side of the state 1 and the suction pipe 22 on the side of the vacuum pump 24, the length of the suction pipe 33 and the position of the exhaust port 34 are at the upstream side of the 4 air pump 24 () (the side of the processing container 1) and downstream. The flange portions 36, 36 of the ball valve 31 side of the 201202581 33, 34 are respectively fixed to the valve at a plurality of portions in the circumferential direction by bolts or the like. The body 3 3. Further, the suction port 3 3 and the exhaust port 34 are flanges formed by the flange portion 36 on the exhaust pipe 22 side and the end surface of the exhaust pipe 22 by, for example, clamping. The portion 22a is hermetically connected to the exhaust pipe 22. The valve body 32 is, for example, inserted from one side to one end side of a rotating shaft 37 for rotating a ball unit 41, which will be described later, and the other end side of the rotating shaft 37 is also As shown in Figure 3, The drive unit 38 is connected to a rotary actuator (rotary air cylinder) using a pneumatic cylinder. The drive unit 38, the ball valve 31, the exhaust pipe 22, and the vacuum pump 24 constitute a vacuum exhaust device. As shown in Fig. 4, the inside of the valve body 32 houses a slightly spherical valve body (spherical assembly 41) which is configured to be rotatable around the vertical axis by the above-described moving shaft 37. The ball assembly 41 is provided. Between the suction port 33 and the exhaust port 34, in order to support the ball assembly 41 from the processing container side and the vacuum pump side, respectively, a slightly annular case C is provided, such as a suction side support composed of a resin. The assembly 42 and the exhaust side support assembly of the suction side support assembly 42 and the exhaust side support assembly 43 are provided, and the support surface of the member 41 is as shown in FIG. 5, along the periphery of the sphere assembly soil. Further, the surface is recessed into a spherical shape. Further, the ball assembly 41 and the exhaust port 4 are airtightly pressed to the exhaust side support assembly 43 and the exhaust port 34 in order to spread the ball assembly 41 around the exhaust pipe. The f is provided with a sealing assembly 44 such as a 0-ring or the like. The exhaust side support = 43 As shown in Fig. 6, a defective portion 43a' in which the inner peripheral surface is cut into a ring shape is formed to receive the seal member 44 in the defective portion 43a. 201202581 The ball assembly 4 includes a contact member a, a front side support member 43 and The seal assembly is pressure-bonded to the suction port 33 and the exhaust port 34 by airtight connection to the valve body 32. Next, the ball assembly 41 will be described in detail. The upper portion of the ball assembly 41 is shown as ' A groove 37a formed to be formed, for example, as a front end portion (lower end portion) of a rectangular rotation shaft 37 is formed. The rotation shaft 37 is used to resist the suction side support assembly 42, the exhaust side support assembly 43, and the seal assembly 44. The fixing force of the ball assembly 41 is fixed so that the ball and the member 41 rotate around an axis orthogonal to the through-passage 45 to be described later (in this example, around the vertical axis). In addition, in order to vacuum-exhaust the atmosphere in the processing chamber 1 from the intake port 33a on the side of the intake manifold 33 to the exhaust port 34a on the side of the exhaust port 34, the ball unit 41 is formed in a straight line so as to penetrate the inside. A through passage 45 for the gas flow path is formed. The end faces of the spherical members 41 at the both end portions of the through-passage 45 are cut to form the opening portion 46 of the through-passage 45. Then, as will be described later, the spherical member 41 is caused by the rotating shaft 37 in the following three states. Rotating around the vertical axis, the three states are the fully open state in which the intake port 33a and the exhaust port 34a are communicated through the through-passage 45, and the outer wall surface of the ball assembly 41 is directed to the suction port 33a and The exhaust port 34a is a closed state in which the two turns 33, 34 are blocked, and one end of the through-passage 45 faces the opening of the exhaust port 34, and the other end of the penetrating path 45 is from the opening of the intake port 33. Hidden tiny open state. That is, when the ball assembly 41 is rotated from the closed state to the fully open state 201202581, as shown in FIGS. 6 and 7, the exhaust side branch assembly 43 is formed to accommodate the defective portion 43a of the seal assembly 44, so that it is sucked. Before the opening 46 on the port 33a faces the intake port 33a, the opening 46 on the side of the exhaust port 3 passes through the defective portion 43a and faces the exhaust port 34a (connected to the exhaust port 34a). status. The position of the ball unit 41 at this time is referred to as the above-described minute open state. In the minute open state, the opening 46 on the side of the intake port 33a is self-suction by the suction side support unit 42. 33a is airtight. Regional planning. In addition, the "airtight area" herein also includes the case where the atmosphere on the side of the processing container is slightly exhausted from the air suction port 33 and the small gap between the suction side support member 42 and the ball assembly 41. . As shown in FIG. 5, the suction side support assembly 42, the exhaust side support assembly 43, and the seal assembly 44 are configured to rotate the ball assembly 41 to align the openings 46, 46 with the intake port 33a and the exhaust. At the mouth 34a, the ball assembly 41 can be supported at the outer periphery of the opening portion 46. In addition, in FIG. 4 and FIG. 7, the valve body 32 is omitted, and the groove 37a is omitted in FIG. 2, and among the two openings 46, for example, the opening 46 is disposed opposite to the intake port 33a side. The outer surface of the ball assembly 41 at the separation portion from the opening portion 46 is as shown in FIGS. 4 and 9 in the direction in which the ball assembly 41 is rotated from the closed state to the fully open state (clockwise in this example). A gas flow port 47 is formed at a slightly central position in the height direction of the spherical body assembly 41. The inside of the ball unit 41 is provided with a hole extending from the gas flow port 47 toward the inner wall of the through-pass 45. The area of the opening 102 201202581 is formed to be smaller than the through-hole 45 (hole portion) 4δ as a through hole, and the minute connecting passage 48 is formed. The gas hole 49 formed in the J face is intersected with the through pipe 48. In this example, the ball assembly 41 is viewed from the upper side.
45之錄錢財體組件 氣體流通口47之直線所形成的角度θ 因此’該微小連通道48如後述圖η所示， 二】：田使球體組件41從封閉狀態朝向開放狀態轉 f時’在兩端側的開口部4 6、4 6分別與吸氣口 3 3 a及 排t口 ％相連通之前，氣體流通口 47便會面臨吸氣 二二側來使吸氣口 33a與貫穿道45相連通。然後， ^組件41更進-步地轉動而成為微小開放狀態 時’排氣埠34側的開口部46會與排氣口地相連通， 且吸氣埠33侧的開口部46會依然保持在自吸氣口咖 隱藏之狀態，而透過貫穿道45及排氣口細側之開口45. The angle θ formed by the straight line of the gas flow port 47 of the money component is such that the microchannel 48 is as shown in the following figure η, and the second is: when the sphere assembly 41 is turned from the closed state to the open state. Before the opening portions 4 6 and 46 on the both end sides are respectively connected to the intake port 3 3 a and the row t port %, the gas flow port 47 faces the suction side 2 to make the suction port 33a and the through hole 45. Connected. Then, when the module 41 is further rotated to be in a minute open state, the opening portion 46 on the side of the exhaust port 34 communicates with the exhaust port, and the opening portion 46 on the side of the intake port 33 remains. The self-suction port is hidden, and the opening through the through-way 45 and the fine side of the exhaust port
部4 6外緣與該排氣口 3 4 a内緣之間的區域來使吸氣口 33a與排氣口 34a相連通。 該成膜裝置如上述圖i所示，係具有例如電腦所構 成的控制部50,該控制部50係具有程式、記憶體、cpu 所構成的資訊處理部等。程式係構成為將控制訊號傳送 至裝置的各部，以於將晶圓W收納於處理容器工内而 進行真空減時將排氣量從小流量切換成大流量，並對 該晶圓W供應處理氣體來進行成膜處理。又，記憶體 設置有-區域，其係寫人有例如對晶圓An area between the outer edge of the portion 46 and the inner edge of the exhaust port 3 4 a causes the intake port 33a to communicate with the exhaust port 34a. As shown in Fig. i, the film forming apparatus includes, for example, a control unit 50 composed of a computer, and the control unit 50 includes an information processing unit including a program, a memory, and a CPU. The program is configured to transmit a control signal to each part of the apparatus to store the wafer W in the processing container, to perform vacuum reduction, to switch the amount of exhaust gas from a small flow rate to a large flow rate, and supply the processing gas to the wafer W. To perform film formation processing. Moreover, the memory is provided with a region, and the writer has, for example, a wafer.
S 12 201202581 m處理的配方(例如處理氣體的流 溫度及成胺细π ΛΑ 里處理壓力、處理 從二 次數等處理條件)。然後，藉二S 12 201202581 m treated formula (for example, the flow temperature of the process gas and the treatment pressure in the fine π 成, treatment conditions such as the number of times). Then, borrow two
從心憶體讀取配方，而藉由程 傻猎由CPU 以構成。哕浐介^入 飞朿進订成膜處理所加 示之r二/。3關於處理參數的輸人操作或顯 接^ 憶部51而被安襄在控制部$The recipe is read from the heart and the body is composed by the CPU.哕浐 ^ 入 入 入 朿 朿 朿 朿 朿 朿 朿 朿 朿 朿 朿 朿 朿 朿 朿 朿3 About the input operation of the processing parameters or the display of the memory unit 51 is installed in the control unit $
接下^，針對上述成膜裝置的作用，參照圖忉及 "口以5兒明。首先’利用例如搬送臂（圖巾未顯示） 亚經由搬送π U來將晶圓w搬人至例如保持在') 圍之處理容器i内，而載置於溫度已被職為例如= 溫度後的載置台2上。此時，如圖1G⑻所示，球間31 會位在封閉狀態而停止真空排氣，球體組件41會因真 空幫浦24而被吸附在該真空幫浦μ側，且該球體組/件 41的外壁面會透過密封組件44而氣密地壓接於排氣側 支撐組件43及排氣埠34。接下來，使晶圓w靜電吸附 於載置台2側，將搬送臂從處理容器1退出，並氣密地 關閉閘閥。之後’將晶圓W上昇至成膜位置。 然後，順時針方向轉動球體組件41後，如圖11所 示，在貫穿道45兩端侧的開口部46、46分別與吸氣D 33a及排氣口 34a相連通前，氣體流通口 47會露出於吸 氣口 33a侧。再朝順時針方向稍加轉動球體組件41後， 球體組件41便會如圖10(b)所示般地位在微小開放狀 態。如上所述，由於排氣側支撐組件43的内周緣係形 成有用以收納密封組件44之刻槽43a，因此在該微小開 13 201202581 放狀態下，於排氣埠34側處’開口部46側邊的端部便 會稍彳政路出於排氣口 34a側’而使得排氣口 34a與貫穿 道45相連通。另一方面，於吸氣埠33側處，開口部 46係自吸氣口 33a隱藏之狀態，而透過吸氣侧支撐組件 42被氣密地封閉。於是，處理容器i内的氛圍便會如 上述圖6及圖10(b)以箭頭來顯示氣體的流動般，經由 微小連通道48、貫穿道45、排氣埠34側處之開口部 46的外緣與刻槽43a及排氣口 34a的内緣之間的區域而 被排氣至真空幫浦24侧。此時’由於係使微小連通道Μ 48的開口面積小於貫穿道45，因此經由微小連通道48 而被排氣之氣體流量便會成為小於全開狀態下進行排 氣之通常排氣時的氣體流量之緩慢排氣狀態。於是，處 理容器1内的氛圍便會慢慢地被排出。 接下來，當處理容器1内的真空度提高至例如石英 所構成的上述覆蓋體5不會因壓力而破損程度的真空 度(例如40Pa(0.3Torr))後，如圖10(c)所示，再朝順時針 方向轉動球體組件41，來使球體組件41位在全開狀 ‘) 態。亦即，使球體組件41位在貫穿道45兩端側的開口 部46、46分別對向於吸氣口 33&及排氣口 34a側之位 置處。在此全開狀態下，處理容器丨内的氛圍會以較當 球體組件41位在上述微小開放狀態時要更大的流量被 真空排氣。 之後，當處理容器1内的氛圍成為完全抽除狀態 後，調整流量調整部23以使處理容器丨内的真空度成 201202581 :二應方之處理壓力，並經由氣體供應道8a來將 曰^成^體供應至處理容ϋ 1内。當該賴氣體接觸 2。w日守，该氣體會吸附在晶圓w表面。接下來，經 丨々〇氣體供應道8a、8b、8c來從氣體喷出孔9及 ς應口 9a對晶圓w噴出吹淨氣體，以藉由該吹淨氣體 :置換處理容器1内的成膜氣體。接下來，藉由從氣體 ί、應逼8b對晶圓w供應氧化氣體，以將吸附在晶圓冒 ( 表面之成膜氣體氧化。晶圓W表面會因成膜氣體的吸 附與氧化的成膜循環’而形成有例如氧化铪(Hf〇2)膜所 構成的薄膜。然後，對處理容器1内供應吹淨氣體，以 藉由吹淨氣體來置換該處理容器丨内的氧化氣體，並藉 由重複執行複數次該成膜循環來層積該薄膜。 此日^· ’因成臈處理而產生的副產物或未反應的成膜 氣體會經由排氣管22及球閥31而從處理容器1被排 氣。當該等副產物或未反應的成膜氣體接觸排氣管22 或球閥31的内壁面時，該等副產物或成膜氣體等便會 欲附著在該内壁面。然而，如上述圖1〇(c)所示，由於 球閥31的密封組件44係配置在開口部46外緣，因此 密封組件44幾y會與在排氣管22内被排氣之氣體接 觸。因此，可抑^著物附著在密封組件44。 然後，成膜處理結束後，停止各氣體的供應並透過 流量調整部23來使處理容器！内為完全抽除狀態後， 逆時針方向轉動球閥31以成為圖1〇(a)所示之封閉狀 態。此時，由於如上所述地’密封組件44幾乎未附著 15 201202581 有附著物，因此球體組件41的外壁面與排氣埠34便會 在封閉狀態下藉由密封組件44而被氣密地密封。之 後，對處理容器1内供應例如非活性氣體來使該處理容 器1的内部氛圍回到大氣氛園後’自處理容器1取出晶 圓W。 依據上述實施型態，该球體組件41設置有一微小 連通道48，該微小連通道48係用以在當球體組件41 所設置之貫穿道45的一端面臨排氣埠34的開口部且該 貫穿道45的另一端自吸氣埠33的開口部隱藏時，藉由 微小間隙來連通吸氣口 33a與貫穿道45之間。於是， 能充分對應於可獲得微小開放狀態之球體組件41，而 不要求球體組件41的停止位置要有高的精確度。於 是，便可以簡單的構造來獲得進行全開、關及微小排 氣之狀態。其結果，藉由使用該球閥於真空排氣裝置， 便可以-個球閥來進行缓慢排氣與通常排氣，在成 '本上 為有利的。又’由於係在進行通常排氣前進行緩慢排 氣，因此可抑制石英所構成的組件(覆蓋體羽壓力變 動而導致破損。 η π个叩取名饿小遇通道牦之習知的球 閥’當使球體組件41從封閉狀態朝向全開狀態轉動 a夺，會分別經由貫穿道45兩端側處之各開口部46、 的外緣與吸氣口 ^及排氣口 34a白勺内緣之間的區域 而使得吸氣埠33侧與排氣埠34側相連通。從 等吸氣蜂33側與排氣蜂34側為相連通之狀態稍為使 201202581 體組件41朝向全開狀態側轉動時，兩側埠幻、％ 通區域便會急速地增加，是，習知_閥當轉動破 組件41而從封閉狀態成為全開狀態時，可謂相對於a 體組件41轉動量之排氣流量增加量會極為地多。於/ 是，為了使用習知的球閥而以微小流量來進行排氣 '，便 必須藉由使用例如伺服馬達等高價組件來細微地控制 球體組件41的轉動量，並正確地調整埠33、％彼此之 $ 間相連通區域的尺寸。 然而，本發明係於球體組件41設置有微小連通道 48，且使該微小連通道48的氣體流通口 47自開口部 46相隔有距離，以確保能夠以微小流量來進行排氣之 球體組件41的轉動範圍為較大範圍。亦即，當使球體 組件41從封閉狀態朝向全開狀態轉動時，本發明可使 氣體流通口 47露出於吸氣口 33a側，並透過排氣埠34 侧處之開口部46外緣與排氣口 34a内緣之間的區域， C 而從貫穿道45與排氣埠34相連通之位置起，直到吸氣 口 33a側處之開口部46内緣接近該吸氣口 33a内緣之 位置為止’可透過微小連通道48而以微小流量進行排 氣。於使，在此轉動範圍内，氣體流量便幾乎不會變化。 因此’由於藉由使球體組件41(轉動軸37)在此轉動範圍 内轉動，便可以微小流量來確實地進行排氣，而不須設 置例如上述高價的纟且件等，從而便可抑制球閥31的製 造成本。 再者’將有附著物附著在排氣管22或球體組件41 17 201202581 件44伏自"1 的成膜氣體排除(全開狀態）時，由於密封組 件44 ^貫穿道45被區劃，因此附著物附著在密封組 動Θ#，便+較小。因此，使球體組件41朝封閉狀態轉 較小，付著物的存在而造成真空排氣無法停止之虞會 且可抑制因附著物的附著而導致密封組件44的 的、又’藉由使用全開時的傳導率較大且可將大流量 排除之球閥來構成真空排氣裝置， :器1(其係收納有直徑尺寸為例如3〇〇嶋大小的晶圓 )之成膜裝置用閥體來說為有利的。 ，上述範例雖將微小連通道48形成為從上側觀看時 的形狀為線形’但如圖12所示，亦可形成為接近扇形。 亦即二亦可如圖13所示，在球體組件41高度方向的中 央部别侧從貫穿道45至側方側（使球體組件41從封閉 狀態朝向全開狀態轉動時的轉動方向）刻畫扇形刻槽， 而將所謂的上述微小連通道48配置在橫跨長度方向而 與貫穿道45相連通。即便是上述形狀，仍可同樣地在 微小開放狀態以小流量來將氣體排除，而獲得同樣的效 果。 又，如圖14及圖15所示，亦可取代球體組件41， 而於閥本體32(吸氣埠33)形成有氣體流通口 47及微小 連通道48。亦即，於吸氣埠33之閥本體32側的凸緣 部36内壁面形成有氣體流通口 47，並於該凸緣部36 及吸氣側支#組件42形成有作為溝部而從該氣體流通 口 47延伸的微小連通道48。該微小連通道48的開口 201202581 端（氣體孔49)係形成於在該吸氣側支撐組件42中支撐 球體組件41的内周面。此範例亦如圖15所示，當使球 體組件41從封閉狀態朝向全開狀態轉動，來使吸氣埠 33側的開口部46位在面臨閥本體32的内部區域之位 置，則氣體會透過微小連通道、貫穿道45、排氣 埠34側的開口部46外緣與排氣口 34a内緣之間而被排 除。此範例亦可將微小連通道48形成為扇形。Next, for the function of the above film forming apparatus, refer to the figure and the " mouth to 5 children. First, by using, for example, a transfer arm (not shown), the wafer w is transferred to the processing container i, for example, by holding π U, and is placed in the processing container i, for example, after the temperature has been used, for example, = temperature. On the mounting table 2. At this time, as shown in FIG. 1G (8), the ball 31 is in a closed state to stop the vacuum exhaust, and the ball assembly 41 is attracted to the vacuum pump μ side by the vacuum pump 24, and the ball group/member 41 The outer wall surface is hermetically crimped to the exhaust side support assembly 43 and the exhaust port 34 through the seal assembly 44. Next, the wafer w is electrostatically adsorbed on the mounting table 2 side, the transfer arm is withdrawn from the processing container 1, and the gate valve is hermetically closed. Thereafter, the wafer W is raised to the film formation position. Then, after the ball assembly 41 is rotated clockwise, as shown in FIG. 11, before the openings 46, 46 on both end sides of the through-passage 45 are in communication with the intake air D 33a and the exhaust port 34a, the gas flow port 47 is It is exposed on the side of the intake port 33a. After slightly rotating the ball assembly 41 in the clockwise direction, the ball assembly 41 is in a slightly open state as shown in Fig. 10(b). As described above, since the inner periphery of the exhaust side support member 43 is formed with the groove 43a for accommodating the seal member 44, the opening portion 46 side at the side of the exhaust port 34 in the state of the minute opening 13 201202581 The end of the side is slightly swayed by the side of the exhaust port 34a' such that the exhaust port 34a communicates with the through-passage 45. On the other hand, at the side of the suction port 33, the opening portion 46 is concealed from the air intake port 33a, and is airtightly sealed by the air intake side support member 42. Then, the atmosphere in the processing container i is displayed by arrows in the above-described Figs. 6 and 10(b), and the openings 46 are formed through the minute connecting passages 48, the through passages 45, and the exhaust ports 34. The outer edge is exhausted to the vacuum pump 24 side in a region between the groove 43a and the inner edge of the exhaust port 34a. At this time, since the opening area of the minute connecting passage 48 is smaller than that of the through passage 45, the flow rate of the gas exhausted through the minute connecting passage 48 becomes smaller than the flow rate of the normal exhaust when the exhaust is performed in the fully open state. Slow exhaust state. Thus, the atmosphere in the processing container 1 is slowly discharged. Next, when the degree of vacuum in the processing container 1 is increased to, for example, a degree of vacuum (for example, 40 Pa (0.3 Torr)) in which the covering body 5 composed of quartz is not damaged by pressure, as shown in FIG. 10(c). Then, the ball assembly 41 is rotated clockwise to position the ball assembly 41 in the fully open state. That is, the opening portions 46, 46 of the spherical member 41 on the both end sides of the through-pass 45 are opposed to the suction port 33 & and the exhaust port 34a, respectively. In this fully open state, the atmosphere in the processing vessel is evacuated by a greater flow rate than when the spherical component 41 is in the above-described minute open state. After that, when the atmosphere in the processing container 1 is completely removed, the flow rate adjusting unit 23 is adjusted so that the degree of vacuum in the processing container 2012 becomes 201202581: the processing pressure of the two sides, and is supplied via the gas supply path 8a. The body is supplied to the processing capacity 1 . When the gas is in contact with 2. w, the gas will be adsorbed on the surface of the wafer w. Next, the purge gas is discharged from the gas discharge holes 9 and the nip nozzles 9a to the wafer w via the gas supply channels 8a, 8b, and 8c to replace the inside of the processing container 1 by the purge gas. Film forming gas. Next, by supplying oxidizing gas to the wafer w from the gas ί, it is forced to adsorb on the wafer (the surface forming gas is oxidized. The surface of the wafer W is adsorbed and oxidized by the film forming gas). Forming a film composed of, for example, a hafnium oxide (Hf〇2) film, and then supplying a purge gas into the processing container 1 to replace the oxidizing gas in the processing container crucible by blowing a gas, and The film is laminated by repeating the film formation cycle a plurality of times. This day, by-products or unreacted film-forming gas generated by the enthalpy treatment are processed from the processing container via the exhaust pipe 22 and the ball valve 31. 1 is exhausted. When the by-products or unreacted film-forming gas contacts the inner wall surface of the exhaust pipe 22 or the ball valve 31, the by-products or film forming gas or the like may adhere to the inner wall surface. As shown in Fig. 1(c) above, since the seal assembly 44 of the ball valve 31 is disposed at the outer edge of the opening portion 46, the seal assembly 44 is y contacted with the gas exhausted in the exhaust pipe 22. Therefore, The object can be attached to the sealing member 44. Then, after the film forming process is finished When the supply of the respective gases is stopped and the flow rate adjusting unit 23 is used to completely remove the inside of the processing container, the ball valve 31 is rotated counterclockwise to be in a closed state as shown in Fig. 1(a). The seal assembly 44 is almost unattached 15 201202581 There is an attachment, so the outer wall surface of the ball assembly 41 and the exhaust port 34 are hermetically sealed by the seal assembly 44 in a closed state. 1 is supplied with, for example, an inert gas to return the internal atmosphere of the processing container 1 to the large atmosphere chamber, and then the wafer W is taken out from the processing container 1. According to the above embodiment, the ball assembly 41 is provided with a micro connecting passage 48, which The minute connecting passage 48 is configured to face the opening of the exhaust port 34 at one end of the through-passage 45 provided by the ball assembly 41 and the other end of the through-pass 45 is hidden from the opening of the intake manifold 33 by the minute The gap communicates between the suction port 33a and the through-passage 45. Thus, it can sufficiently correspond to the spherical body assembly 41 in which the minute open state can be obtained without requiring the high-precision position of the stop position of the ball-shaped assembly 41. Yes, it is possible to obtain a state of full opening, closing, and minute exhausting with a simple structure. As a result, by using the ball valve in the vacuum exhausting device, a ball valve can be used for slow exhausting and normal exhausting. It is advantageous to be 'in this case. 'Because it is slowly exhausted before the normal exhaust, it is possible to suppress the components made of quartz (the cover plume pressure changes and causes damage. η π 叩 名 饿 饿 小 小The conventional ball valve of the passage ' "turns the ball assembly 41 from the closed state toward the fully open state, and passes through the outer edge of each opening portion 46 at the both end sides of the through passage 45, and the intake port and the exhaust. The area between the inner edges of the mouth 34a causes the side of the suction port 33 to communicate with the side of the exhaust port 34. When the state of the inhalation bee 33 and the side of the exhaust bee 34 are in a state of being connected to each other, when the 201202581 body assembly 41 is rotated toward the fully open state side, the illusion of both sides and the % passage area are rapidly increased. When the valve is rotated from the closed state to the fully open state, the amount of increase in the exhaust flow rate with respect to the amount of rotation of the a-body assembly 41 is extremely large. In / Yes, in order to perform the exhaust by a small flow rate using a conventional ball valve, it is necessary to finely control the amount of rotation of the ball assembly 41 by using a high-priced component such as a servo motor, and correctly adjust 埠33, % The size of the interconnected area of each other. However, the present invention is such that the ball assembly 41 is provided with the minute connecting passage 48, and the gas flow port 47 of the minute connecting passage 48 is spaced apart from the opening portion 46 to ensure the ball assembly 41 capable of exhausting at a minute flow rate. The range of rotation is a large range. That is, when the ball assembly 41 is rotated from the closed state toward the fully open state, the present invention allows the gas flow port 47 to be exposed to the side of the intake port 33a and to pass through the outer edge of the opening portion 46 at the side of the exhaust port 34 and the exhaust gas. The region between the inner edges of the port 34a, C, from the position where the through-passage 45 communicates with the exhaust port 34 until the inner edge of the opening portion 46 at the side of the intake port 33a approaches the inner edge of the intake port 33a. 'Exhaust at a small flow rate through the micro-connector 48. Therefore, the gas flow rate hardly changes within this range of rotation. Therefore, since the ball assembly 41 (the rotating shaft 37) is rotated within this rotation range, the exhaust can be surely performed with a small flow rate without setting such a high-priced squeezing member, etc., thereby suppressing the ball valve. The manufacturing cost of 31. Furthermore, when the attached material is attached to the exhaust pipe 22 or the ball assembly 41 17 201202581, the film forming gas is removed from the <1 (full open state), since the sealing member 44 is traversed by the passage 45, the adhesion is adhered. The object is attached to the sealing group Θ#, then it is smaller. Therefore, the ball assembly 41 is made smaller toward the closed state, and the presence of the object causes the vacuum exhaust to be stopped, and the adhesion of the deposit due to the adhesion of the deposit can be suppressed, and the use of the seal assembly 44 can be prevented. When the ball valve having a large conductivity and a large flow rate can be removed, a vacuum exhaust device can be formed, and the device 1 (which is a wafer for accommodating a wafer having a diameter of, for example, 3 Å) is used as a valve body for a film forming apparatus. Said to be beneficial. In the above example, the minute connecting passages 48 are formed in a line shape when viewed from the upper side, but as shown in Fig. 12, they may be formed in a nearly fan shape. In other words, as shown in FIG. 13, the fan-shaped engraving can be described in the center portion of the height direction of the ball assembly 41 from the through-pass 45 to the side (the rotation direction when the ball assembly 41 is rotated from the closed state toward the fully open state). In the groove, the so-called minute connecting passage 48 is disposed to communicate with the through passage 45 across the longitudinal direction. Even in the above shape, the gas can be similarly removed in a small open state with a small flow rate, and the same effect can be obtained. Further, as shown in Figs. 14 and 15, a gas flow port 47 and a minute connecting passage 48 may be formed in the valve body 32 (suction port 33) instead of the ball unit 41. That is, a gas flow port 47 is formed in the inner wall surface of the flange portion 36 on the valve body 32 side of the intake manifold 33, and the flange portion 36 and the intake side branch # assembly 42 are formed as a groove portion from the gas. A small connecting passage 48 through which the flow port 47 extends. The opening 201202581 end (gas hole 49) of the minute connecting passage 48 is formed in the inner peripheral surface of the spherical body supporting member 42 in the suction side supporting member 42. In this example, as shown in Fig. 15, when the ball assembly 41 is rotated from the closed state toward the fully open state, the opening portion 46 on the side of the suction port 33 is positioned to face the inner region of the valve body 32, and the gas passes through the minute. The passage, the through passage 45, the outer edge of the opening portion 46 on the side of the exhaust port 34, and the inner edge of the exhaust port 34a are excluded. This example can also form the micro-connecting channel 48 into a fan shape.
C 再者’上述各範例雖係將微小連通道48形成於吸 氣埠33側，但亦可形成於排氣埠％側。此情況下，其 結構為例如於微小開放狀態下，於吸氣埠33側，氣體 έ k開口部46外緣與吸氣口 33a内緣之間流入至球體 、件41内，而於排氣埠34側，會在藉由密封組件44 而：，組件41夕卜壁面與排氣側支撐組件43及排氣埠 氣您地在、封之狀態下透過微小連通道48來將氣體排 ^具體來說’例如圖16所示，係將排氣埠料形成為 ^ 口广的口徑小於吸氣口 33a，並使貫穿道45的口 ㈣^蜂33側朝向排氣埠34侧愈來愈小的方式來構 Μ、ώ Γ件& °此範例中亦將排氣流量從小流量切換 成大流量。 ν 7所示，亦可在吸氣埠33側及排氣埠 能^，刀/^成有微小連通道48。此範例於微小開放狀 "糸過2個微小連通道48及貫穿道45來將氣體 個:°又、’此情灯’係亦可在球體組件 41 0 2 個从小連通道48、48#中的其中之—，而於閥本體％ 19 201202581 形成有另一者。 又 ，上述成縣置雖騎對形餘化賴之範例 加以說明’但本發明亦可適用於形成例如銘(Sr)、鈦 (Ti)、綱(La)、妃〇〇等的氧化物，具體來說為HfSi〇、 Si^O、！^或YdopedHf〇等高介電體材料，抑 氧化物(Si02)等之情況。又，除了⑽法以外本於明 亦可適用於_ CVD(Chemieal v啊 DepGsiti〇n)^來 進行該等氧化物的成膜之情況。再者，除了上述成獏骏 置以外，亦可將介設有本發明球閥之真空排氣道連接於 進行例如钮刻處理或灰化處理之電渡處理農置等真空 處理裝置、或在真空氛圍下進行晶圓w的搬送之真空 裝置(例如氣密地連接有複數真空容器之多處理室系統 中的真空搬送室）、抑或進行真空氛圍與大氣氛圍的切 換之裝載室等。 【圖式簡單說明】 圖1係顯示使用本發明球閥之成膜裝置一例的概 略圖。 圖2係顯示該球閥一例的立體圖。 圖3係顯示該球閥之側面圖。 圖4係顯示該球闕之分解立體圖。 圖5係顯示該球閥之橫剖面圖。 圖6係放大顯示該球閥的一部分之橫剖面圖。 圖7係顯示該球閥的橫剖面之立體圖。 201202581 圖8係顯示該球闊之縱剖面圖。 圖9係顯示該球閥的球體組件之侧面圖。 圖10(a)、圖10(b)、圖10⑷係顯示該球閥中，氣 體被排氣的樣態之示意圖。 圖11係顯示該球閥中，微小連通道對向於吸氣埠 側的樣態之示意圖。 圖12係顯示該球閥的其他範例之橫剖面圖。 圖13係顯示該其他範例中的球體組件之側面圖。 圖14係顯示該球閥其他範例中的橫剖面之立體 圖。 圖15係顯示該其他範例中的球閥之橫剖面圖。 圖16係顯示該球閥的其他範例之橫剖面圖。 圖17係顯示該球閥的其他範例之橫剖面圖。 圖18係顯示習知的排氣方法之概略圖。 【主要元件符號說明】 W 晶圓 1 處理容器 2 載置台 2a 昇降軸 2b 昇降機構 3 傳遞機構 4 加熱器 5 覆蓋體 21 201202581 6 伸縮管 7 氣體喷淋頭 8a、8b、8c 氣體供應道 9 氣體喷出孔 9a 供應口 11 搬送口 21 排氣部 21a 排氣隔板 22 排氣管 22a 凸緣部 23 流量調整部 24 真空幫浦 31 球閥 32 閥本體 33 吸氣埠 33a 吸氣口 34 排氣埠 34a 排氣口 35 螺栓 36 凸緣部 37 轉動軸 37a 刻槽 38 驅動部 41 球體組件 22 201202581 吸氣側支撐組件 排氣側支撐組件 缺陷部 密封組件 貫穿道 開口部 氣體流通口 微小連通道C Further, in the above examples, the minute connecting passage 48 is formed on the side of the intake port 33, but may be formed on the side of the exhaust port %. In this case, the structure is, for example, in a small open state, on the side of the intake manifold 33, between the outer edge of the gas έ k opening 46 and the inner edge of the intake port 33a, flows into the sphere, the member 41, and is exhausted. The side of the crucible 34, by means of the sealing assembly 44, the assembly 41 and the exhaust side support assembly 43 and the exhaust gas helium are in the state of being sealed, and the gas is arranged through the micro connecting passage 48. For example, as shown in Fig. 16, the venting material is formed to have a larger diameter than the suction port 33a, and the port (four) of the penetrating passage 45 is closer to the side of the exhaust port 34. The way to construct, ώ && ° ° This example also switches the exhaust flow from small flow to large flow. As shown in ν 7, it is also possible to have a small connecting passage 48 on the side of the suction port 33 and the exhaust port. This example is in the form of a small open shape. It has two small connecting channels 48 and a running channel 45 to carry out the gas: °, 'this light' can also be in the spherical component 41 0 2 from the small connecting channel 48, 48# Among them, the valve body % 19 201202581 is formed with the other. Moreover, the above-mentioned Chengxian set is illustrated by the example of the shape of the shape, but the present invention can also be applied to the formation of oxides such as Sr (Sr), Titanium (Ti), La (La), Bismuth, etc. Specifically, it is HfSi〇, Si^O,! ^ or YdopedHf〇 is a high dielectric material, such as oxide (Si02). Further, in addition to the method (10), the present invention can also be applied to _CVD (Chemieal v DepGsiti〇n) to form a film of the oxide. Furthermore, in addition to the above-described Chengjun Jun, the vacuum exhaust passage through which the ball valve of the present invention is placed may be connected to a vacuum processing device such as a button processing or an ashing treatment, or a vacuum treatment device. A vacuum device that transports the wafer w in an atmosphere (for example, a vacuum transfer chamber in a multi-processing chamber system in which a plurality of vacuum containers are airtightly connected), or a load chamber that switches between a vacuum atmosphere and an atmospheric atmosphere. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing an example of a film forming apparatus using a ball valve of the present invention. Fig. 2 is a perspective view showing an example of the ball valve. Figure 3 is a side view showing the ball valve. Fig. 4 is an exploded perspective view showing the ball. Figure 5 is a cross-sectional view showing the ball valve. Figure 6 is a cross-sectional view showing a portion of the ball valve in an enlarged manner. Figure 7 is a perspective view showing a cross section of the ball valve. 201202581 Fig. 8 is a longitudinal sectional view showing the width of the ball. Figure 9 is a side elevational view showing the ball assembly of the ball valve. Fig. 10 (a), Fig. 10 (b), and Fig. 10 (4) are schematic views showing a state in which the gas is exhausted in the ball valve. Fig. 11 is a view showing a state in which the minute connecting passages face the suction side in the ball valve. Figure 12 is a cross-sectional view showing another example of the ball valve. Figure 13 is a side elevational view showing the ball assembly of the other example. Fig. 14 is a perspective view showing a cross section in another example of the ball valve. Figure 15 is a cross-sectional view showing the ball valve in the other example. Figure 16 is a cross-sectional view showing another example of the ball valve. Figure 17 is a cross-sectional view showing another example of the ball valve. Fig. 18 is a schematic view showing a conventional exhaust method. [Main component symbol description] W Wafer 1 Processing container 2 Mounting table 2a Lifting shaft 2b Lifting mechanism 3 Transfer mechanism 4 Heater 5 Cover 21 201202581 6 Telescopic tube 7 Gas shower head 8a, 8b, 8c Gas supply line 9 Gas Discharge hole 9a Supply port 11 Transfer port 21 Exhaust portion 21a Exhaust diaphragm 22 Exhaust pipe 22a Flange portion 23 Flow adjustment portion 24 Vacuum pump 31 Ball valve 32 Valve body 33 Suction port 33a Suction port 34 Exhaust埠34a Exhaust port 35 Bolt 36 Flange portion 37 Rotary shaft 37a Groove 38 Drive portion 41 Spherical assembly 22 201202581 Suction side support assembly Exhaust side support assembly Defective seal assembly Passage passage opening gas passage port Minimal passage
C 氣體孔 控制部 記憶部 處理容器 排氣管 主閥 緩慢排氣用分流道 副閥 真空幫浦 壓力調整部 23C Gas hole Control unit Memory unit Processing container Exhaust pipe Main valve Slow exhaust bypass valve Vice valve Vacuum pump Pressure adjustment unit 23