KR20100105632A - 칩 조립체, 연결 조립체, ｌｅｄ 및 칩 조립체의 제조 방법 - Google Patents

칩 조립체, 연결 조립체, ｌｅｄ 및 칩 조립체의 제조 방법 Download PDF

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Publication number
KR20100105632A
KR20100105632A KR1020107014177A KR20107014177A KR20100105632A KR 20100105632 A KR20100105632 A KR 20100105632A KR 1020107014177 A KR1020107014177 A KR 1020107014177A KR 20107014177 A KR20107014177 A KR 20107014177A KR 20100105632 A KR20100105632 A KR 20100105632A
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KR
South Korea
Prior art keywords
semiconductor chip
assembly
chip
connection
plane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020107014177A
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English (en)
Korean (ko)
Inventor
허버트 부루너
스테펜 코럴
라이문드 슈와르츠
스테판 그롯츠
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
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Application filed by 오스람 옵토 세미컨덕터스 게엠베하 filed Critical 오스람 옵토 세미컨덕터스 게엠베하
Publication of KR20100105632A publication Critical patent/KR20100105632A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Led Device Packages (AREA)
KR1020107014177A 2007-11-28 2008-11-21 칩 조립체, 연결 조립체, ｌｅｄ 및 칩 조립체의 제조 방법 Ceased KR20100105632A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102007057242 2007-11-28
DE102007057242.7 2007-11-28
DE102008021618A DE102008021618A1 (de) 2007-11-28 2008-04-30 Chipanordnung, Anschlussanordnung, LED sowie Verfahren zur Herstellung einer Chipanordnung
DE102008021618.6 2008-04-30

Publications (1)

Publication Number Publication Date
KR20100105632A true KR20100105632A (ko) 2010-09-29

Family

ID=40586002

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107014177A Ceased KR20100105632A (ko) 2007-11-28 2008-11-21 칩 조립체, 연결 조립체, ｌｅｄ 및 칩 조립체의 제조 방법

Country Status (8)

Country Link
US (1) US20100314635A1 (https=)
EP (1) EP2225785B1 (https=)
JP (1) JP2011505072A (https=)
KR (1) KR20100105632A (https=)
CN (1) CN101878544A (https=)
DE (1) DE102008021618A1 (https=)
TW (1) TWI484656B (https=)
WO (1) WO2009067996A2 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI405307B (zh) * 2009-09-18 2013-08-11 聯詠科技股份有限公司 晶片封裝及其製程
DE102010046790A1 (de) * 2010-09-28 2012-03-29 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zu dessen Herstellung
DE102012201616A1 (de) * 2012-02-03 2013-08-08 Tridonic Jennersdorf Gmbh Kunststoffträger für LED-Chips zur Verwendung in LED-Modulen und LED-Ketten
EP2642538A1 (en) 2012-03-22 2013-09-25 Koninklijke Philips N.V. 3D LED structures
KR101957884B1 (ko) * 2012-05-14 2019-03-13 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 조명 장치
KR101886157B1 (ko) * 2012-08-23 2018-08-08 엘지이노텍 주식회사 발광 소자 및 조명시스템
US9576935B2 (en) * 2014-04-16 2017-02-21 Infineon Technologies Ag Method for fabricating a semiconductor package and semiconductor package
US9865528B2 (en) * 2015-12-11 2018-01-09 Ubotic Company Limited High power and high frequency plastic pre-molded cavity package
JP6110528B2 (ja) * 2016-02-03 2017-04-05 京セラコネクタプロダクツ株式会社 半導体発光素子用ホルダ、及び、半導体発光素子モジュール
KR102746562B1 (ko) 2019-03-22 2024-12-24 삼성전자주식회사 발광 소자 패키지

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5866374A (ja) * 1981-10-16 1983-04-20 Toshiba Corp 発光ダイオ−ド
US5167724A (en) * 1991-05-16 1992-12-01 The United States Of America As Represented By The United States Department Of Energy Planar photovoltaic solar concentrator module
JPH088463A (ja) * 1994-06-21 1996-01-12 Sharp Corp 薄型ｌｅｄドットマトリックスユニット
US5991160A (en) * 1995-12-27 1999-11-23 Infineon Technologies Corporation Surface mount LED alphanumeric display
US6612890B1 (en) * 1998-10-15 2003-09-02 Handy & Harman (Ny Corp.) Method and system for manufacturing electronic packaging units
DE10033502A1 (de) * 2000-07-10 2002-01-31 Osram Opto Semiconductors Gmbh Optoelektronisches Modul, Verfahren zu dessen Herstellung und dessen Verwendung
DE10117889A1 (de) * 2001-04-10 2002-10-24 Osram Opto Semiconductors Gmbh Leiterrahmen und Gehäuse für ein strahlungsemittierendes Bauelement, strahlungsemittierendes Bauelement sowie Verfahren zu dessen Herstellung
JP4646485B2 (ja) * 2002-06-25 2011-03-09 ルネサスエレクトロニクス株式会社 薄膜磁性体記憶装置
TW594950B (en) * 2003-03-18 2004-06-21 United Epitaxy Co Ltd Light emitting diode and package scheme and method thereof
JP4174823B2 (ja) * 2003-03-27 2008-11-05 サンケン電気株式会社 半導体発光装置
US7495322B2 (en) * 2003-05-26 2009-02-24 Panasonic Electric Works Co., Ltd. Light-emitting device
JP4966656B2 (ja) * 2003-05-28 2012-07-04 ソウル半導体株式会社 複数のヒートシンクを有する発光ダイオードパッケージ
DE10351934B4 (de) * 2003-11-07 2017-07-13 Tridonic Jennersdorf Gmbh Leuchtdioden-Anordnung mit wärmeabführender Platine
JP2005159045A (ja) * 2003-11-26 2005-06-16 Sumitomo Electric Ind Ltd 半導体発光素子搭載部材とそれを用いた発光ダイオード
US20050116235A1 (en) * 2003-12-02 2005-06-02 Schultz John C. Illumination assembly
DE102004009284A1 (de) * 2004-02-26 2005-09-15 Osram Opto Semiconductors Gmbh Leuchtdioden-Anordnung für eine Hochleistungs-Leuchtdiode und Verfahren zur Herstellung einer Leuchtdioden-Anordnung
TWI288486B (en) * 2004-03-17 2007-10-11 Epistar Corp Light-emitting diode and method for manufacturing the same
US20050280016A1 (en) * 2004-06-17 2005-12-22 Mok Thye L PCB-based surface mount LED device with silicone-based encapsulation structure
JP2006005290A (ja) * 2004-06-21 2006-01-05 Citizen Electronics Co Ltd 発光ダイオード
JP2006049442A (ja) * 2004-08-02 2006-02-16 Sharp Corp 半導体発光装置およびその製造方法
DE102004051379A1 (de) * 2004-08-23 2006-03-23 Osram Opto Semiconductors Gmbh Vorrichtung für ein optoelektronisches Bauteil und Bauelement mit einem optoelektronischen Bauteil und einer Vorrichtung
US7745832B2 (en) * 2004-09-24 2010-06-29 Epistar Corporation Semiconductor light-emitting element assembly with a composite substrate
DE102005009060A1 (de) * 2005-02-28 2006-09-07 Osram Opto Semiconductors Gmbh Modul mit strahlungsemittierenden Halbleiterkörpern
JP2007109945A (ja) * 2005-10-14 2007-04-26 Fujifilm Holdings Corp 光源
JP5066333B2 (ja) * 2005-11-02 2012-11-07 シチズン電子株式会社 Ｌｅｄ発光装置。
JP4967347B2 (ja) * 2006-01-24 2012-07-04 サンケン電気株式会社 線状光源及び半導体発光ユニットの製法
US7655957B2 (en) * 2006-04-27 2010-02-02 Cree, Inc. Submounts for semiconductor light emitting device packages and semiconductor light emitting device packages including the same

Also Published As

Publication number Publication date
TW200929627A (en) 2009-07-01
WO2009067996A3 (de) 2009-10-08
DE102008021618A1 (de) 2009-06-04
TWI484656B (zh) 2015-05-11
US20100314635A1 (en) 2010-12-16
CN101878544A (zh) 2010-11-03
WO2009067996A2 (de) 2009-06-04
EP2225785B1 (de) 2017-03-15
JP2011505072A (ja) 2011-02-17
EP2225785A2 (de) 2010-09-08

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