KR20100057784A - 개선된 감지를 위해 상이한 기준 레벨들을 이용하는 비휘발성 메모리에서의 비정밀/정밀 프로그램 검증 - Google Patents

개선된 감지를 위해 상이한 기준 레벨들을 이용하는 비휘발성 메모리에서의 비정밀/정밀 프로그램 검증 Download PDF

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Publication number
KR20100057784A
KR20100057784A KR1020107002519A KR20107002519A KR20100057784A KR 20100057784 A KR20100057784 A KR 20100057784A KR 1020107002519 A KR1020107002519 A KR 1020107002519A KR 20107002519 A KR20107002519 A KR 20107002519A KR 20100057784 A KR20100057784 A KR 20100057784A
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KR
South Korea
Prior art keywords
programming
storage elements
verify level
voltage
level
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KR1020107002519A
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English (en)
Korean (ko)
Inventor
시-정 리
Original Assignee
샌디스크 코포레이션
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Priority claimed from US11/773,035 external-priority patent/US7599224B2/en
Priority claimed from US11/773,032 external-priority patent/US7508715B2/en
Application filed by 샌디스크 코포레이션 filed Critical 샌디스크 코포레이션
Publication of KR20100057784A publication Critical patent/KR20100057784A/ko
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate

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  • Read Only Memory (AREA)
KR1020107002519A 2007-07-03 2008-07-02 개선된 감지를 위해 상이한 기준 레벨들을 이용하는 비휘발성 메모리에서의 비정밀/정밀 프로그램 검증 Withdrawn KR20100057784A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/773,035 2007-07-03
US11/773,032 2007-07-03
US11/773,035 US7599224B2 (en) 2007-07-03 2007-07-03 Systems for coarse/fine program verification in non-volatile memory using different reference levels for improved sensing
US11/773,032 US7508715B2 (en) 2007-07-03 2007-07-03 Coarse/fine program verification in non-volatile memory using different reference levels for improved sensing

Publications (1)

Publication Number Publication Date
KR20100057784A true KR20100057784A (ko) 2010-06-01

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Application Number Title Priority Date Filing Date
KR1020107002519A Withdrawn KR20100057784A (ko) 2007-07-03 2008-07-02 개선된 감지를 위해 상이한 기준 레벨들을 이용하는 비휘발성 메모리에서의 비정밀/정밀 프로그램 검증

Country Status (6)

Country Link
EP (1) EP2165338B1 (enExample)
JP (1) JP5198563B2 (enExample)
KR (1) KR20100057784A (enExample)
CN (1) CN101796591B (enExample)
TW (1) TWI389124B (enExample)
WO (1) WO2009006513A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130072517A (ko) * 2011-12-22 2013-07-02 에스케이하이닉스 주식회사 불휘발성 메모리 장치 및 이의 소거 방법
US8811088B2 (en) 2011-09-29 2014-08-19 Samsung Electronics Co., Ltd. Method of reading memory cells with different threshold voltages without variation of word line voltage and nonvolatile memory device using the same
US8934305B2 (en) 2011-07-11 2015-01-13 Samsung Electronics Co., Ltd. Nonvolatile memory device, method of operating the same and electronic device including the same
US9007840B2 (en) 2010-09-30 2015-04-14 SK Hynix Inc. Semiconductor memory apparatus and program verification method

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8081514B2 (en) * 2009-08-25 2011-12-20 Sandisk Technologies Inc. Partial speed and full speed programming for non-volatile memory using floating bit lines
JP5002632B2 (ja) * 2009-09-25 2012-08-15 株式会社東芝 不揮発性半導体記憶装置
KR101658118B1 (ko) * 2010-06-10 2016-09-20 삼성전자 주식회사 반도체 메모리 장치, 및 이의 독출 및 검증 방법
KR101798013B1 (ko) * 2010-12-30 2017-11-16 삼성전자주식회사 비휘발성 메모리 장치의 프로그램 방법
KR102192539B1 (ko) * 2014-05-21 2020-12-18 삼성전자주식회사 반도체 장치 및 이의 프로그램 방법
CN109390030A (zh) * 2018-10-16 2019-02-26 长江存储科技有限责任公司 一种寄存器以及闪存单元的分组设备和方法
CN109979515B (zh) * 2019-03-25 2021-08-31 长江存储科技有限责任公司 一种存储器编程方法及相关装置
US10930355B2 (en) * 2019-06-05 2021-02-23 SanDiskTechnologies LLC Row dependent sensing in nonvolatile memory
WO2021068231A1 (en) 2019-10-12 2021-04-15 Yangtze Memory Technologies Co., Ltd. Method of programming memory device and related memory device
US11682459B2 (en) * 2020-05-13 2023-06-20 Silicon Storage Technology, Inc. Analog neural memory array in artificial neural network comprising logical cells and improved programming mechanism

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3631463B2 (ja) * 2001-12-27 2005-03-23 株式会社東芝 不揮発性半導体記憶装置
KR100496866B1 (ko) * 2002-12-05 2005-06-22 삼성전자주식회사 미프로그램된 셀들 및 과프로그램된 셀들 없이 균일한문턱 전압 분포를 갖는 플레쉬 메모리 장치 및 그프로그램 검증 방법
US7139198B2 (en) 2004-01-27 2006-11-21 Sandisk Corporation Efficient verification for coarse/fine programming of non-volatile memory
US7023733B2 (en) * 2004-05-05 2006-04-04 Sandisk Corporation Boosting to control programming of non-volatile memory
JP4271168B2 (ja) * 2004-08-13 2009-06-03 株式会社東芝 半導体記憶装置
JP4786171B2 (ja) * 2004-12-10 2011-10-05 株式会社東芝 半導体記憶装置
WO2006107651A1 (en) * 2005-04-01 2006-10-12 Sandisk Corporation Multi-state memory having data recovery after program fail

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9007840B2 (en) 2010-09-30 2015-04-14 SK Hynix Inc. Semiconductor memory apparatus and program verification method
US8934305B2 (en) 2011-07-11 2015-01-13 Samsung Electronics Co., Ltd. Nonvolatile memory device, method of operating the same and electronic device including the same
US8811088B2 (en) 2011-09-29 2014-08-19 Samsung Electronics Co., Ltd. Method of reading memory cells with different threshold voltages without variation of word line voltage and nonvolatile memory device using the same
US9129696B2 (en) 2011-09-29 2015-09-08 Samsung Electronics Co., Ltd. Method of reading memory cells with different threshold voltages without variation of word line voltage and nonvolatile memory device using the same
KR20130072517A (ko) * 2011-12-22 2013-07-02 에스케이하이닉스 주식회사 불휘발성 메모리 장치 및 이의 소거 방법

Also Published As

Publication number Publication date
EP2165338A1 (en) 2010-03-24
EP2165338B1 (en) 2012-06-20
CN101796591B (zh) 2013-04-24
TW200910358A (en) 2009-03-01
WO2009006513A1 (en) 2009-01-08
TWI389124B (zh) 2013-03-11
JP5198563B2 (ja) 2013-05-15
CN101796591A (zh) 2010-08-04
JP2010532541A (ja) 2010-10-07

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